Substrate processing apparatus and substrate processing method

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method capable of maintaining an etching rate of a substrate within a predetermined range by preventing an amount of dissolved oxygen from concentrating in a specific region of the substrate when a chemical is supplied to a center of the substrate. The apparatus for processing a substrate includes: a chamber having a processing space; a support unit for supporting and rotating a substrate in the processing space; a liquid discharge unit including a nozzle for discharging a processing liquid in a liquid phase onto the substrate supported by the support unit; and a liquid supply unit for supplying the processing liquid to the liquid discharge unit, in which the nozzle is spaced apart from a center of the substrate when viewed from above such that when the processing liquid is supplied to the substrate rotated by the support unit, the nozzle is spaced apart from the center of the substrate. The processing liquid is not ejected by the nozzle at a position overlapping a center of the substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0072949 filed in the Korean Intellectual Property Office on June 7, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to an apparatus for processing a substrate, and more particularly, to a substrate processing apparatus and a substrate processing method for processing a substrate. Background Art

[0004] In order to manufacture semiconductor devices or flat panel display panels, various processes such as deposition, photolithography, etching and cleaning are required. Among these processes, the photolithography process includes a coating process of applying a photosensitive liquid (such as a photoresist) to the surface of a substrate to form a film, an exposure process of transferring a circuit pattern to the film formed on the substrate, and a development process of selectively removing the film formed on the substrate from an exposure area or an area opposite to the exposure area. In addition, a heat treatment process is performed before and after the coating process, the exposure process and the development process.

[0005] On the other hand, a substrate treating apparatus performing the above-mentioned cleaning process supplies acidic or alkaline chemicals to a substrate, cleans the supplied chemicals with a rinse solution, and dries the substrate with a drying fluid.

[0006] In this case, the chemical contains an oxygen component as well as the chemical component, and since an excessive oxygen component may change an etching rate, the amount of dissolved oxygen in the chemical needs to be maintained and supplied at a predetermined level.

[0007] A chemical having a dissolved oxygen amount at a predetermined level is supplied to the center of a rotating substrate and then diffused to an edge area as the substrate rotates to clean the substrate.

[0008] In this case, the center of the substrate has a higher dissolved oxygen amount than other regions of the substrate due to the continuous supply of chemicals, and thus, the center of the substrate exhibits a greater variation in etching rate than other regions of the substrate.

[0009] Therefore, when the chemicals are supplied to the substrate, nitrogen gas is blown and supplied to improve the situation where the dissolved oxygen content is high near the center.

[0010] However, when nitrogen is supplied with chemicals, the nitrogen may concentrate in the center of the substrate, causing an increase in dissolved oxygen in other areas, or it may cause turbulence around the chemical surface, resulting in an irregular distribution of dissolved oxygen.

[0011] As a result, the chemical causes irregular changes in the amount of dissolved oxygen in the entire region of the substrate because of the above-mentioned phenomenon caused by nitrogen, and the substrate is non-uniformly etched in the entire region. Summary of the invention

[0012] To solve the above problems, the present invention provides a substrate processing apparatus and a substrate processing method capable of maintaining an etching rate of a substrate within a predetermined range by preventing the amount of dissolved oxygen from being concentrated in a specific area of ​​the substrate when chemicals are supplied to the center of the substrate.

[0013] The objects of the present invention are not limited thereto, and other objects not mentioned will be clearly understood from the following description by those skilled in the art.

[0014] An exemplary embodiment of the present invention is an apparatus for processing a substrate, the apparatus comprising: a chamber having a processing space; a support unit for supporting and rotating the substrate in the processing space; a liquid discharge unit comprising a nozzle for discharging a processing liquid in a liquid phase onto the substrate supported by the support unit; and a liquid supply unit for supplying the processing liquid to the liquid discharge unit, wherein the nozzle is spaced apart from the center of the substrate when viewed from above, so that when the processing liquid is supplied to the substrate rotated by the support unit, the processing liquid is not ejected by the nozzle at a position overlapping with the center of the substrate.

[0015] According to example embodiments, the nozzle may be disposed at a position spaced apart from a top surface of the substrate by a predetermined distance in an upward direction to supply the processing liquid.

[0016] According to example embodiments, the nozzle may supply the processing liquid in a direction perpendicular to the top surface of the substrate.

[0017] According to example embodiments, the nozzle may discharge the processing liquid at a position close to the center of the substrate between a distance to the center of the substrate and a distance to an edge of the substrate.

[0018] According to example embodiments, the processing liquid supplied to the substrate may be diffused to each of the center side of the substrate and the edge side of the substrate.

[0019] According to example embodiments, when a position where the processing liquid is supplied is referred to as a first position and a center of a distance from a center of a substrate to an edge of the substrate is referred to as a second position, the first position may be closer to the center of the substrate than the second position.

[0020] According to example embodiments, when a distance from a center of a substrate to an edge of the substrate is referred to as a first distance, the first position may be selected within a range of 5% to 15% of the first distance from the center of the substrate.

[0021] According to an exemplary embodiment, the treatment liquid may include an ammonia component.

[0022] According to example embodiments, before the treatment liquid is supplied, organic residues and particles may be formed on the substrate.

[0023] According to an exemplary embodiment, the treatment liquid may be formed with a dissolved oxygen amount of 1500 ppb to 2500 ppb.

[0024] According to an exemplary embodiment, the device may further include: a dissolved oxygen amount detection unit, which is connected to the liquid discharge unit and detects the dissolved oxygen amount of the treatment liquid and calculates the dissolved oxygen amount data; and a controller, which is linked with the dissolved oxygen amount detection unit to receive the dissolved oxygen amount data and changes the position of supplying the treatment liquid according to the dissolved oxygen amount data.

[0025] Another exemplary embodiment of the present invention provides a substrate processing method for processing a substrate, the substrate processing method including: a processing operation of supplying a processing liquid through a nozzle to a substrate that is rotated and simultaneously placed on a supporting unit; and a rinsing operation of supplying another processing liquid through a nozzle to the substrate that is rotated and simultaneously placed on the supporting unit to remove the processing liquid, wherein in the processing operation, when viewed from above, the nozzle is spaced apart from the center of the substrate so that when the processing liquid is supplied to the substrate that is rotated by the supporting unit, the processing liquid is not sprayed to a position overlapping with the center of the substrate.

[0026] According to example embodiments, in a processing operation, the nozzle may be disposed at a position spaced apart from a top surface of the substrate by a predetermined distance in an upward direction to supply the processing liquid.

[0027] According to example embodiments, in a processing operation, the nozzle may supply the processing liquid in a direction perpendicular to the top surface of the substrate.

[0028] According to example embodiments, in a processing operation, the nozzle may discharge the processing liquid at a position close to the center of the substrate between a distance to the center of the substrate and a distance to an edge of the substrate.

[0029] According to example embodiments, in a processing operation, a processing liquid supplied to a substrate may be diffused to each of a center side of the substrate and an edge side of the substrate.

[0030] According to example embodiments, in a processing operation, when a position where a processing liquid is supplied is referred to as a first position and a center of a distance from a center of a substrate to an edge of the substrate is referred to as a second position, the first position may be closer to the center of the substrate than the second position.

[0031] According to example embodiments, in a process operation, when a distance from a center of a substrate to an edge of the substrate is referred to as a first distance, the first position may be selected within a range of 5% to 15% of the first distance from the center of the substrate.

[0032] According to an exemplary embodiment, the treatment liquid may include an ammonia component.

[0033] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate, the apparatus comprising: a chamber having a processing space; a support unit for supporting and rotating the substrate in the processing space; a liquid discharge unit comprising a nozzle for discharging a processing liquid in a liquid phase onto the substrate supported by the support unit; a liquid supply unit for supplying the processing liquid to the liquid discharge unit; a dissolved oxygen amount detection unit connected to the liquid discharge unit and detecting the dissolved oxygen amount of the processing liquid and calculating dissolved oxygen amount data; and a controller linked to the dissolved oxygen amount detection unit to receive the dissolved oxygen amount data and changing a position for supplying the processing liquid according to the dissolved oxygen amount data, wherein the nozzle is spaced apart from a center of the substrate when viewed from above so that when the processing liquid is supplied to the substrate rotated by the support unit, the processing liquid The body is not sprayed by the nozzle at a position overlapping with the center of the substrate, the nozzle is set at a position separated from the top surface of the substrate by a distance in the upward direction to supply the processing liquid, the nozzle supplies the processing liquid in a direction perpendicular to the top surface of the substrate, the nozzle discharges the processing liquid at a position close to the center of the substrate between the distance to the center of the substrate and the distance to the edge of the substrate, the processing liquid supplied to the substrate is diffused to each of the center side of the substrate and the edge side of the substrate, when the distance from the center of the substrate to the edge of the substrate is referred to as a first distance, the first position is selected in the range of 5% to 15% of the first distance from the center of the substrate, the processing liquid contains an ammonia component, organic residues and particles are formed on the substrate before the processing liquid is supplied, and the processing liquid is formed with a dissolved oxygen amount of 1500ppb to 2500ppb.

[0034] According to the present invention, the etching rate of the substrate can be maintained within a predetermined range by preventing the amount of dissolved oxygen from being concentrated in a specific area of ​​the substrate when the chemicals are supplied to the center of the substrate.

[0035] The effects of the present invention are not limited to the above-mentioned effects, and those skilled in the art can clearly understand unmentioned effects from the present specification and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The various features and advantages of the non-limiting exemplary embodiments of the present specification will become apparent upon reading the detailed description in conjunction with the accompanying drawings. The drawings are for illustrative purposes only and should not be construed as limiting the scope of the claims. Unless expressly stated otherwise, the drawings are not to be considered drawn to scale. Various dimensions in the drawings may be exaggerated for clarity.

[0037] Figure 1 is a top plan view schematically illustrating the interior of a substrate processing facility according to an exemplary embodiment of the present invention.

[0038] Figure 2 It is schematically shown Figure 1 A longitudinal cross-sectional view of a substrate processing apparatus is shown.

[0039] Figure 3 is a flow chart of a substrate processing method according to the present invention.

[0040] Figure 4 It is schematically shown in Figure 3 A top plan view of the position of a first nozzle of a substrate processing apparatus in a first processing operation is shown.

[0041] Figure 5 It is schematically shown in Figure 3 A top plan view of the position of a second nozzle of a substrate processing apparatus in a second processing operation is shown.

[0042] Figure 6 It is schematically shown in Figure 3 A top plan view of the position of a third nozzle of a substrate processing apparatus during a drying operation is shown.

[0043] Figure 7 It is schematically shown in Figure 3 A top plan view of the position of a first nozzle of a substrate processing apparatus in a second processing operation is shown.

[0044] Figure 8 yes Figure 7 A front view of a substrate processing apparatus is shown.

[0045] Fig. 9 is from Figure 7 and Figure 8 A graph of the etch rate from the center to the edge of the substrate shown.

[0046] Fig.10 is used with Figure 8 A front view of a substrate processing apparatus for comparison with a comparative example.

[0047] Fig.11 is from Fig.10 A graph of the etch rate from the center to the edge of the substrate shown.

[0048] Fig.12 is a front view of a substrate processing apparatus according to another exemplary embodiment of the present invention.

[0049] Fig.13 yes Fig.12An enlarged front view of a substrate processing apparatus is shown.

[0050] Fig.14 is used for Fig.12 A flow chart of a substrate processing method of a substrate processing apparatus is shown. DETAILED DESCRIPTION

[0051] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. Exemplary embodiments are provided so that the present disclosure will be thorough and will fully convey its scope to those skilled in the art. Many specific details, such as examples of specific components, devices, and methods, are set forth to provide a thorough understanding of the embodiments of the present disclosure. It will be apparent to those skilled in the art that specific details need not be employed, that exemplary embodiments may be embodied in many different forms, and neither should be construed as limiting the scope of the present disclosure. In some exemplary embodiments, processes, known device structures, and known techniques that are not described in detail are not disclosed.

[0052] The terms used herein are only used for the purpose of describing specific exemplary embodiments, and are not restrictive. As used herein, unless the context clearly indicates otherwise, when the quantity is not specified, "said" may also be intended to include plural forms. The terms "including" and "having" are inclusive, and therefore specify the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups thereof. Unless specifically identified as an execution order, the method steps, processes and operations described herein should not be interpreted as necessarily requiring them to be performed in the specific order discussed or described. It should also be understood that additional or alternative steps may be adopted.

[0053] When an element or layer is referred to as being "on," "engaged," "connected," or "coupled" to another element or layer, it may be directly "on," "engaged," "connected," or "coupled" to the other element or layer, or there may be intermediate elements or layers. Conversely, when an element is referred to as being "directly on," "directly engaged to," "directly connected to," or "directly coupled to" another element or layer, there may be no intermediate elements or layers. Other words used to describe the relationship between elements should be interpreted in a similar manner (i.e., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.). As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0054] Although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer or section from another region, layer or section. Unless the context clearly indicates, the terms such as "first", "second" and other numerical terms used herein do not imply sequence or order. Therefore, without departing from the teaching of exemplary embodiments, the first element, component, region, layer or section discussed below can be referred to as the second element, component, region, layer or section.

[0055] For ease of describing the relationship of one element or feature to another element or feature as shown in the figure, spatial relative terms such as "inside", "outside", "below", "below", "below", "above", and "above", etc. may be used herein. In addition to the orientations described in the figures, spatial relative terms may be intended to cover different orientations of the device in use or operation. For example, if the device in the drawings is flipped, elements described as "below" or "below" other elements or features will be oriented "above" the other elements or features. Therefore, the exemplary term "below" can cover both above and below orientations. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein are interpreted accordingly.

[0056] When the terms "same" or "equivalent" are used in the description of the exemplary embodiments, it should be understood that some imprecision may exist. Therefore, when an element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as the other element or value within a manufacturing or operating tolerance range (e.g., ±10%).

[0057] When the term "about" or "substantially" is used in conjunction with a numerical value, it should be understood that the relevant numerical value includes a manufacturing or operating tolerance (e.g., ±10%) around the numerical value. In addition, when the words "generally" and "substantially" are used in conjunction with geometric shapes, it should be understood that the accuracy of the geometric shape is not required, but the latitude of the shape is within the scope of the present disclosure.

[0058] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present example embodiments belong. It should also be understood that terms (including those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined as such in this article.

[0059] In the present exemplary embodiment, a wafer will be described as an example of an object to be processed. However, the technical concept of the present invention can also be applied to an apparatus used for other types of substrate processing in addition to a wafer.

[0060] Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

[0061] Figure 1 is a top plan view schematically illustrating the interior of a substrate processing facility according to an exemplary embodiment of the present invention. Figure 2 It is schematically shown Figure 1 A longitudinal cross-sectional view of a substrate processing apparatus is shown.

[0062] refer to Figure 1 and Figure 2 , the substrate processing facility 1 includes an index module 10 and a process processing module 20, and the index module 10 includes a loading port 120 and a transfer frame 140. The loading port 120, the transfer frame 140, and the process processing module 20 are arranged in a continuous row. Hereinafter, the direction in which the loading port 120, the transfer frame 140, and the process processing module 20 are arranged is referred to as a first direction 12, a direction perpendicular to the first direction 12 when viewed from above is referred to as a second direction 14, and a direction perpendicular to a plane including the first direction 12 and the second direction 14 is referred to as a third direction 16.

[0063] The carrier 18 containing the substrate W is placed on the load port 120. A plurality of load ports 120 are provided and arranged in a row in the second direction 14. Figure 1 In the embodiment, four load ports 120 are provided. However, the number of the load ports 120 may be increased or decreased according to conditions such as the processing efficiency and the occupied area of ​​the process processing module 20. Grooves (not shown) for supporting the edges of the substrates are formed in the carrier 18. A plurality of grooves are provided in the third direction 16, and the substrates are placed within the carrier to be stacked in the third direction 16 while being spaced apart from each other. As the carrier 18, a front opening unified pod (FOUP) may be used.

[0064] The process treatment module 20 may include a buffer unit 20, a transfer chamber 240, and process chambers 260 and 280. The transfer chamber 240 is arranged so that its longitudinal direction is parallel to the first direction 12. The process chambers 260 and 280 are arranged on opposite sides of the transfer chamber 240 in the second direction 14. The process chamber 260 may be arranged symmetrically to each other relative to the transfer chamber 240. Some of the process chambers 260 and 280 are arranged along the longitudinal direction of the transfer chamber 240. In addition, some of the process chambers 260 and 280 are arranged to be stacked on each other. That is, the process chamber 240 may be arranged in an A×B array (A and B are natural numbers equal to or greater than 1) on opposite sides of the transfer chamber 240. Here, "A" is the number of process chambers 260 and 280 arranged in a row along the first direction 12, and "B" is the number of process chambers 260 and 280 arranged in a row along the third direction 16. When four or six process chambers 260 are provided on each of the opposite sides of the transfer chamber 240, a plurality of process chambers 260 and 280 may be provided in a 2×2 or 3×2 array. The number of process chambers 260 and 280 may be increased or decreased. Different from the above, the process chamber 260 may be provided only to one side of the transfer chamber 240. In addition, the process chambers 260 and 280 may be provided as a single layer on one side and the opposite side of the transfer chamber 240. Furthermore, the process chambers 260 and 280 may be provided in various arrangements different from the above.

[0065] The process chambers 260 and 280 of the present exemplary embodiment may be divided into a cleaning chamber and a drying chamber. In this case, the cleaning chamber may be a substrate processing apparatus for cleaning a substrate, which will be described below, and the drying chamber may be a substrate processing apparatus for drying a substrate.

[0066] The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 may provide a space in which the substrate W stays before being transferred between the transfer chamber 240 and the transfer frame 140. A groove (not shown) on which the substrate W is placed is provided in the buffer unit 220, and the groove (not shown) is provided in plural so as to be spaced apart from each other in the third direction 16. In the buffer unit 220, a side facing the transfer frame 140 and a side facing the transfer chamber 240 are each opened.

[0067] The transfer frame 140 transfers the substrate W between the carrier 18 disposed on the loading port 120 and the buffer unit 220. The transfer frame 140 is provided with an indexing track 142 and an indexing robot 144. The indexing track 142 is provided so that its longitudinal direction is parallel to the second direction 14. The indexing robot 144 is mounted on the indexing track 142 and moves linearly in the second direction 14 along the indexing track 142. The indexing robot 144 includes a base 144a, a main body 144b and an indexing arm 144c. The base 144a is installed to be movable along the indexing track 142. The main body 144b is coupled to the base 144a. The main body 144b is arranged to be movable on the base 144a in the third direction 16. In addition, the main body 144b is arranged to be rotatable on the base 144a. The indexing arm 144c is coupled to the main body 144b and is arranged to be movable forward and backward relative to the main body 144b. The plurality of indexing arms 144c are configured to be driven individually. The indexing arms 144c are configured to be stacked in a state where they are spaced apart from each other in the third direction 16. When transferring the substrate W from the process treatment module 20 to the carrier 18, a portion of the indexing arms 144c may be used, and when transferring the substrate W from the carrier 130 to the process treatment module 20, another portion of the plurality of indexing arms 144c may be used. This can prevent particles generated from the substrate W before the process treatment from being attached to the substrate W after the process treatment during the process of loading and unloading the substrate W by the indexing robot 144.

[0068] The transfer chamber 240 transfers the substrate W between the buffer unit 220 and the process chamber 260. A guide rail 242 and a main robot 244 are provided to the transfer chamber 240. The guide rail 242 is provided so that its longitudinal direction is parallel to the first direction 12. The main robot 244 is mounted on the guide rail 242 and moves linearly along the first direction 12 on the guide rail 242. The main robot 244 includes a base 244a, a main body 244b, and a main arm 244c. The base 244a is installed to be movable along the guide rail 242. The main body 244b is coupled to the base 244a. The main body 244b is provided to be movable along the third direction 16 on the base 244a. In addition, the main body 244b is provided to be rotatable on the base 244a. The main arm 244c is coupled to the main body 244b and is provided to be movable forward and backward relative to the main body 244b.

[0069] In addition, the process chamber 260 is provided with a substrate processing apparatus 300. In the present exemplary embodiment, a case in which the substrate processing apparatus 300 performs a liquid processing process on a substrate will be described as an example. The liquid processing process may also include a process of cleaning the substrate.

[0070] In one example, the substrate processing apparatus 300 includes a chamber 310 , a processing container 320 , a spin head 340 , an elevating unit 360 , a liquid discharge unit 400 , a gas flow forming unit 500 , a liquid supply unit 600 , and a controller 700 .

[0071] The chamber 310 provides a processing space 312 in which a process of processing a substrate W is performed.

[0072] The processing container 320 is located in the processing space 312 and is arranged in the shape of a cup with an open top. When viewed from above, the processing container 320 is positioned to overlap with the exhaust pipe. The processing container 320 includes an internal collection container 322 and an external collection container 326. Each of the internal collection container 322 and the external collection container 326 collects a processing liquid different from the processing liquid used in the process. The internal collection container 322 is arranged in an annular ring shape around the rotating head 340, and the external collection container 326 is arranged in an annular ring shape around the internal collection container 322. The internal space 322a of the internal collection container 322 and the space 326a between the external collection container 326 and the internal collection container 322 are used as inlets for the processing liquid to flow into the internal collection container 322 and the external collection container 326, respectively. The collecting lines 322b and 326b are connected to the bottom surfaces of the internal collection container 322 and the external collection container 326, respectively, to extend vertically in a downward direction. Each of the collecting lines 322b and 326b serves as a drain pipe to drain the treated liquid that has been introduced through the corresponding internal collecting container 322 and external collecting container 326. The drained treated liquid may be reused by an external treated liquid regeneration system (not shown).

[0073] The spin head 340 is provided as a support unit 340 for supporting and rotating the substrate W. The spin head 340 is provided in the processing container 320. During the process, the spin head 340 supports the substrate W and rotates the substrate W. The spin head 340 includes a chuck body 342, a support pin 344, a chuck pin 346 and a support shaft 348. When viewed from above, the chuck body 342 has a top surface provided in a substantially circular shape. The support shaft 348, which can be rotated by a motor 349, is fixedly coupled to the bottom surface of the chuck body 342. A plurality of support pins 344 are provided. The support pins 344 are provided to be spaced at predetermined intervals on the edge of the upper surface of the chuck body 342 and protrude upward from the chuck body 342. The support pins 334 are arranged to be combined with each other to have an overall annular ring shape. The support pins 344 support the edge of the rear surface of the substrate W so that the substrate W is spaced at a predetermined distance from the upper surface of the spin chuck 342. A plurality of chuck pins 346 are provided. The chuck pin 346 is arranged to be farther away from the center of the chuck body 342 than the support pin 344. The chuck pin 346 is arranged to protrude upward from the chuck body 342. The chuck pin 346 supports the side portion of the substrate W so that when the spin head 340 rotates, the substrate W does not move laterally from the regular position. The chuck pin 346 is arranged to move linearly between the standby position and the support position along the radial direction of the chuck body 342. The standby position is a position away from the center of the chuck body 342 relative to the support position. When the substrate W is loaded into the spin head 340 or unloaded therefrom, the chuck pin 346 is positioned at the standby position, and when a process is performed on the substrate W, the chuck pin 346 is positioned at the support position. At the support position, the chuck pin 346 contacts the side portion of the substrate W.

[0074] The lifting unit 360 adjusts the relative height between the processing container 320 and the spin head 340. The lifting unit 360 moves the processing container 320 linearly in the vertical direction. As the processing container 320 moves in the vertical direction, the relative height of the processing container 320 relative to the spin head 340 changes. The lifting unit 360 includes a bracket 360, a moving shaft 362, and a driver 364. The bracket 362 is fixedly mounted on the outer wall of the processing container 320, and the moving shaft 364 that moves in the vertical direction by the driver 366 is fixedly coupled to the bracket 364. The processing container 320 is lowered so that when the substrate W is placed on the spin head 340 or lifted from the spin head 340, the spin head 340 protrudes above the top of the processing container 320. In addition, when the processing is in progress, the height of the processing container 320 is adjusted so that the processing liquid is introduced into the predetermined collection container 326 according to the type of the processing liquid supplied to the substrate W.

[0075] Different from the above description, the elevating unit 360 may move the spin head 340 in a vertical direction instead of the process container 320 .

[0076] The liquid discharge unit 400 supplies various types of processing liquids to the substrate W. The liquid discharge unit 400 also includes a plurality of nozzles 410 to 430. Each nozzle is connected to a nozzle position driver 440 and is moved to a processing position and a standby position by the nozzle position driver 440. The processing position is defined herein as a position where the nozzles 410 to 430 are able to discharge the processing liquid onto the substrate W located within the processing container 320, and the standby position is defined as a position where the nozzles 410 to 430 are waiting outside the processing position. In one example, the processing position may be a position where the nozzles 410 to 430 are able to supply the processing liquid to the center C1 of the substrate W. For example, when viewed from above, the nozzles 410 to 430 may be linearly or axially movable to move between the processing position and the standby position. The processing liquid discharged from the liquid discharge unit 400 to the substrate W may be a liquefied processing liquid. In addition, in the standby position, the collecting pipe 450 may be disposed below the third nozzle 430. When the third nozzle 430 discharges the processing liquid for cleaning, the collecting pipe 450 collects the processing liquid. In addition, the liquid discharge unit 400 may be exposed to process liquid through a pump.

[0077] The plurality of nozzles 410 to 430 discharge different types of liquids. The treatment fluid discharged from the nozzles 410 to 430 may include at least one of chemicals, a rinse solution, and a drying fluid. Figure 2 In an exemplary embodiment, the first nozzle 410 may be a nozzle for discharging chemicals. The second nozzle 420 may be a nozzle for discharging a rinsing solution. The third nozzle 430 may be a nozzle for discharging a drying fluid. For example, the chemical may be a treatment liquid capable of etching a film formed on the substrate W or removing particles remaining on the substrate W. The chemical may be a liquid having a strong acid or strong base property. The chemical may include sulfuric acid, hydrofluoric acid, or ammonia. The rinsing solution may be a treatment liquid capable of rinsing away the chemical remaining on the substrate W. For example, the rinsing solution may be pure water. A drying fluid may be provided as a treatment liquid to replace the rinsing solution remaining on the substrate W. The drying fluid may be a treatment liquid having a low surface tension compared to the rinsing liquid. The drying fluid may be an organic solvent. The drying fluid may be isopropyl alcohol (IPA). The third nozzle 430 may be connected to a liquid supply unit 600 to be described later.

[0078] The airflow forming unit 500 forms a downward airflow in the processing space 312. The airflow forming unit 500 supplies the airflow from the upper portion of the chamber 310 and exhausts the airflow from the lower portion of the chamber 310. The airflow forming unit 500 further includes an airflow supply unit 520 and an exhaust unit 540. The airflow supply unit 520 and the exhaust unit 540 are positioned to face each other in the vertical direction.

[0079] The airflow supply unit 520 supplies gas in a downward direction. The gas supplied from the airflow supply unit 520 can be air from which impurities have been removed. The airflow supply unit 520 also includes a fan 522, an airflow supply line 524, a supply valve 528, and a filter 526. The fan 522 is installed on the top plate surface of the chamber 310. When viewed from above, the fan 522 is positioned to face the processing container. The fan 522 can be positioned to provide air to the substrate W located in the processing container. The airflow supply line 524 is connected to the fan 522 to supply air to the fan 522. The supply valve 528 is installed in the airflow supply line 524 to adjust the amount of air supplied. The filter 526 is installed in the airflow supply line 524 to filter the air. For example, the filter 526 can remove particles and moisture contained in the air.

[0080] The exhaust unit 540 exhausts the processing space 312. The exhaust unit 540 also includes an exhaust pipe 542, a decompression member 546 and an exhaust valve 548. The exhaust pipe 542 is installed on the bottom surface of the chamber 310 and is provided as a pipeline for exhausting the processing space 312. The exhaust pipe 542 is positioned so that the exhaust port faces upward. The exhaust pipe 542 is positioned so that the exhaust port is communicated with the interior of the processing container. In other words, the top of the exhaust pipe 542 is located in the processing container. Therefore, the downward airflow formed in the processing container is discharged through the exhaust pipe 542.

[0081] The decompression member 546 reduces the pressure of the exhaust pipe 542. The decompression member 546 forms a negative pressure in the exhaust pipe 542, which exhausts the processing container. The exhaust valve 548 is installed in the exhaust pipe 542 and opens and closes the exhaust port of the exhaust pipe 542. The exhaust valve 548 adjusts the exhaust amount.

[0082] The liquid supply unit 600 supplies the treatment liquid to at least one of the plurality of nozzles 410 to 430. The liquid supply unit 600 may heat the treatment liquid. In addition, the liquid supply unit 600 may store the treatment liquid.

[0083] The controller 700 may include a central computing unit. In addition, the controller 700 controls the spin head 340, the lifting unit 360, the liquid discharge unit 400, the air flow forming unit 500, and the liquid supply unit 600 according to an internal preset algorithm to process the substrate W according to a scheme.

[0084] Hereinafter, a substrate processing method of a substrate processing apparatus according to an exemplary embodiment of the present invention will be described.

[0085] Figure 3 is a flow chart of a substrate processing method according to the present invention. Figure 4 It is schematically shown in Figure 3 A top plan view of the position of a first nozzle of a substrate processing apparatus in a first processing operation is shown. Figure 5 It is schematically shown in Figure 3 A top plan view of the position of a second nozzle of a substrate processing apparatus in a second processing operation is shown. Figure 6 It is schematically shown in Figure 3 A top plan view of the position of a third nozzle of a substrate processing apparatus during a drying operation is shown.

[0086] Further references Figures 3 to 6 , the substrate processing method according to the substrate processing apparatus of the present invention may include a first processing operation S10, a second processing operation S20, a rinsing operation S30, and a drying operation S40.

[0087] First, in the first processing operation S10, in a state where the substrate W is placed on the spin head 340, the substrate W is rotated by the rotation of the spin head 340. In addition, in the first processing operation S10, the nozzle position driver 440 is driven to move the first nozzle 410 to an area above the center C1 of the rotating substrate W, and a processing liquid is sprayed from the first nozzle 410. In this case, the processing liquid sprayed from the first nozzle 410 may be an acidic processing liquid including sulfuric acid or hydrofluoric acid. Therefore, in the first processing operation S10, metal residues remaining on the substrate W can be removed.

[0088] Next, in the second processing operation S20, a different processing liquid is supplied to the substrate W rotated by the spin head 340. In this case, the processing liquid supplied in the second processing operation S20 may be a processing liquid containing ammonia. Therefore, in the second processing operation S20, particles or organic residues remaining on the substrate W may be removed.

[0089] Next, in the rinsing operation S30, the nozzle position driver 440 is driven to return the first nozzle 410 to the standby position and move the second nozzle 420 to the center C1 of the substrate W. Then, in the rinsing operation S30, the second nozzle 420 supplies another treatment liquid onto the substrate W rotated by the spin head 340. In this case, the treatment liquid supplied in the rinsing operation S30 may be a treatment liquid containing pure water. Therefore, the acidic and alkaline treatment liquids remaining on the substrate W may be removed in the rinsing operation S30.

[0090] Next, in the drying operation S40, the nozzle position driver 440 is driven to return the second nozzle 420 to the standby position, and the third nozzle 430 is moved to the area above the center C1 of the substrate W. Then, in the rinsing operation S30, a drying fluid is supplied to the substrate W rotated by the spin head 340. In this case, the drying fluid supplied in the drying operation S40 may be isopropyl alcohol (IPA). Therefore, in the drying operation S40, the substrate W may be dried in a state where stains remaining on the substrate W are removed by the first processing operation S10, the second processing operation S20, and the rinsing operation S30.

[0091] Hereinafter, an exemplary embodiment of the second processing operation S20 will be described in more detail.

[0092] Figure 7 It is schematically shown in Figure 3 A top plan view of the position of a first nozzle of a substrate processing apparatus in a second processing operation is shown. Figure 8 yes Figure 7 A front view of a substrate processing apparatus is shown. Fig. 9 is from Figure 7 and Figure 8 A graph of the etch rate from the center to the edge of the substrate shown.

[0093] like Figures 7 to 9 As shown, in the second processing operation S20, another processing liquid is supplied from the first nozzle 410 onto the substrate W rotated by the spin head 340. Here, organic residues and particles are formed on the substrate W. In this case, the first nozzle 410 may spray the processing liquid in a state where the first nozzle 410 is disposed at a distance from the upper surface of the substrate W in an upward direction. In this case, the first nozzle 410 may supply the processing liquid in a direction perpendicular to the top surface of the substrate W so that the processing liquid is not offset in any one direction.

[0094] In addition, the treatment liquid supplied from the first nozzle 410 can be formed of an ammonia-containing component. For example, the treatment liquid can be formed as a solution of SC-1 (H2O2+NH4OH). In addition, a treatment liquid having a dissolved oxygen content of 1500 ppb to 2500 ppb can be formed. Here, the dissolved oxygen content of the treatment liquid may be lower than 1500 ppb or higher than 2500 ppb, which may cause the overall etching rate to be too low or too high.

[0095] In addition, in the second processing operation S20, the injection center of the first nozzle 410 is not set in the upper space of the center C1 of the substrate W, but the processing liquid can be supplied at the first position P1 spaced apart from the center C1 of the substrate W. In other words, the injection center of the first nozzle 410 is set not to overlap with the center C1 of the substrate W. Here, the first position P1 is a position spaced apart from the center C1 of the substrate W, and can be positioned close to the center C1 of the substrate W in terms of the distance to the center C1 of the substrate W and the distance to the edge E1 of the substrate W. For example, when it is assumed that the distance spaced apart from the center C1 of the substrate W by the first nozzle 410 is D2, and the distance from the center C1 of the substrate W to the edge E1 of the substrate W is the first distance D1, the first position P1 can be located within a range of 4% to 20% of the first distance D1. Therefore, the processing liquid supplied at a distance within the above range from the center C1 of the substrate W can prevent the amount of dissolved oxygen from being concentrated near the center C1 of the substrate W. Here, in the case where the range is less than 4% of the first distance D1, the processing liquid is concentrated on the center C1 of the substrate W, thereby increasing the amount of dissolved oxygen, so that the etching rate of the center C1 of the substrate W may be significantly higher than the average etching rate. In addition, in the case where the range is greater than 20% of the first distance D1, the amount of dissolved oxygen in the processing liquid toward the edge E1 of the substrate W may become very low, so that the etching rate near the edge E1 may become significantly lower than the average etching rate.

[0096] Furthermore, when it is assumed that the center of the distance from the center C1 of the substrate W to the edge E1 of the substrate W is referred to as the second position P2, the first position P1 is closer to the center of the substrate W than the second position P2 of the substrate W, thereby preventing the amount of dissolved oxygen from being concentrated near the center C1 of the substrate. Therefore, the amount of dissolved oxygen is not concentrated in the center C1 of the substrate W, and the amount of dissolved oxygen near the edge E1 becomes too low, so that the etching rate to the center C1 of the substrate W and the etching rate to the edge E1 of the substrate W can be formed to be similar to the average etching rate.

[0097] In addition, when the first nozzle 410 is located at the first position P1 and supplies another treatment liquid to the substrate W rotated by the spin head 340, the treatment liquid is diffused from the first position P1 to the center C1 side of the substrate W by the centrifugal force of the rotating substrate W, and diffused from the first position P1 to the edge E1 side of the substrate W by the centrifugal force. Therefore, the treatment liquid can be diffused to the center C1 side of the substrate W and the edge E1 side of the substrate W, respectively, so that the amount of dissolved oxygen is not concentrated in any one place. In addition, the treatment liquid diffused to the edge E1 of the substrate W is quickly discharged when passing through the edge E1 of the substrate W, and falls into the space 326a of the collection container 322 at a certain angle. Therefore, since the flow rate of the treatment liquid near the edge E1 of the substrate W is greatly increased compared with the center, when the treatment liquid moves toward the edge E1, it may be quickly discharged, resulting in a relatively low etching rate compared with the center. However, when the treatment liquid is supplied from the first position P1 instead of the center C1 of the substrate W, the distance that the treatment liquid travels to the edge E1 of the substrate is short, so that the etching rate near the edge E1 is not significantly reduced from the average value.

[0098] In this way, the substrate processing apparatus and substrate processing method of the present invention can etch the substrate W at a maximum etching rate and a minimum etching rate of the substrate W close to an average etching rate within a specific range, such as Fig. 9 shown.

[0099] Fig.10 is used with Figure 8 A front view of a substrate processing apparatus for comparison with a comparative example. Fig.11 is from Fig.10 A graph of the etch rate from the center to the edge of the substrate shown.

[0100] like Fig.10 As shown, the substrate processing apparatus according to the comparative example supplies another processing liquid onto the substrate W rotated by the spin head 340 in a state where the first nozzle 410 is located at the center C1 of the substrate W. In this case, the processing liquid supplied to the center C1 of the substrate W spreads from the center C1 of the substrate W to the vicinity of the edge E1.

[0101] In this case, if Fig.11 As shown, in the substrate processing apparatus according to the comparative example, the amount of dissolved oxygen is concentrated near the center C1 of the substrate W, so that the highest etching rate is much greater than the average etching rate. In addition, since the amount of dissolved oxygen becomes too low near the edge E1 of the substrate W, the lowest etching rate is formed much lower than the average etching rate. Therefore, the substrate W is unevenly etched over the entire area.

[0102] However, unlike the comparative example, the substrate processing apparatus of the aforementioned exemplary embodiment can uniformly etch the entire surface of the substrate W because the highest etching rate and the lowest etching rate near the center C1 and the edge E1 of the substrate W are close to the average etching rate, as shown in FIG. Fig. 9 shown.

[0103] Fig.12 is a front view of a substrate processing apparatus according to another exemplary embodiment of the present invention. Fig.13 yes Fig.12 An enlarged front view of a substrate processing apparatus is shown.

[0104] like Fig.12 As shown, a substrate processing apparatus according to another exemplary embodiment of the present invention includes a chamber 310, a processing container 320, a spin head 340, a lifting unit 360, a liquid discharge unit 400, a gas flow forming unit 500, a liquid supply unit 600, and a controller 700. Here, the liquid supply unit 600 may further include a signal line 801 and a dissolved oxygen amount detection unit 802.

[0105] In the present exemplary embodiment, the chamber 310 , the processing container 320 , the spin head 340 , the elevating unit 360 , the liquid discharge unit 400 , and the gas flow forming unit 500 are the same as those of the above-described substrate processing apparatus 300 , and thus redundant descriptions thereof will be omitted.

[0106] In the present exemplary embodiment, the controller 700 , the signal line 801 , and the dissolved oxygen amount detection unit 802 will be mainly described.

[0107] The signal line 801 electrically connects the dissolved oxygen detection unit 802 and the controller 700. The signal line 801 transmits the dissolved oxygen amount data detected by the dissolved oxygen amount detection unit 802 to the controller 700.

[0108] The dissolved oxygen amount detection unit 802 continuously detects the dissolved oxygen amount in the treatment liquid supplied to the first nozzle 410 and calculates the dissolved oxygen amount data of the discharged treatment liquid. In this case, the calculated dissolved oxygen data is transmitted to the controller 700.

[0109] As described above, the controller 700 controls the spin head 340, the lifting unit 360, the liquid discharge unit 400, the air flow forming unit 500, and the liquid supply unit 600 according to the internal setting algorithm. In addition, the controller 700 is connected to the dissolved oxygen amount detection unit 802 and receives dissolved oxygen amount data from the dissolved oxygen amount detection unit 802. The controller 700 performs control to change the position of the first nozzle 410 by driving the nozzle position driver 440 according to the data of the dissolved oxygen amount in the treatment liquid discharged from the first nozzle 410. For example, when the dissolved oxygen amount in the treatment liquid is too low, the position of the first nozzle 410 can be moved from the first position P1 as a reference position by a certain distance to the center C1 of the substrate W, or when the dissolved oxygen amount is too high, the position of the first nozzle 410 can be moved from the first position P1 as a reference position to the edge E1 of the substrate W. In this way, in the case where the dissolved oxygen amount in the treatment liquid is too high or too low and the etching rate changes, the substrate processing apparatus according to another exemplary embodiment of the present invention can maintain the etching rate at a constant range level.

[0110] Here, the first position P1 of the first nozzle 410 is a position spaced apart from the center C1 of the substrate W, and may be positioned close to the center C1 of the substrate W in terms of the distance to the center C1 of the substrate W and the distance to the edge E1 of the substrate W. In this case, when it is assumed that the distance from the center C1 of the substrate W to the edge E1 of the substrate W is the first distance D1, the first position P1 may be located within a range of 4% to 20% of the first distance D1. Furthermore, when it is assumed that the center of the distance from the center C1 of the substrate W to the edge E1 of the substrate W is referred to as the second position P2, the first position P1 may be closer to the center of the substrate W than the second position P2.

[0111] Fig.14 is used for Fig.12 A flow chart of a substrate processing method of a substrate processing apparatus is shown.

[0112] Further references Fig.14 Another substrate processing method of the present invention may include a first processing operation S10, a dissolved oxygen amount detecting operation S11, a second processing operation S20, a rinsing operation S30, and a drying operation S40.

[0113] Here, the first processing operation S10, the rinsing operation S30, and the drying operation S40 are the same as those in the aforementioned exemplary embodiment, and thus redundant descriptions will be omitted.

[0114] In the dissolved oxygen amount detecting operation S11 , the dissolved oxygen amount detecting unit 802 continuously detects the dissolved oxygen amount in the treatment liquid, calculates dissolved oxygen amount data, and transmits the dissolved oxygen amount data to the controller 700 .

[0115] In the second processing operation S20, the processing liquid is supplied from the first position P1 in the same manner as the second processing operation S20 described above. In addition, in the second processing operation S20, as described above, the controller 700 drives the nozzle position driver 440 according to the data of the amount of dissolved oxygen in the processing liquid discharged from the first nozzle 410. In this case, in the second processing operation S20, when the amount of dissolved oxygen in the processing liquid is too low, the controller 700 controls the position of the first nozzle 410 to move a certain distance from the first position P1 as a reference position toward the center C1 of the substrate W. In addition, in the second processing operation S20, when the amount of dissolved oxygen is too high, the controller 700 controls the position of the first nozzle 410 to move from the first position P1 as a reference position toward the edge E1 of the substrate W. In this case, the controller 700 can control the position of the first nozzle 410 so that the distance traveled by the first nozzle 410 is proportional or inversely proportional to the dissolved oxygen amount data. Therefore, when the amount of dissolved oxygen in the processing liquid is too high or too low to cause the etching rate to change, the substrate processing method according to another exemplary embodiment of the present invention can keep the etching rate at a constant range level.

[0116] It should be understood that exemplary embodiments are disclosed herein, and other variations are possible. Individual elements or features of a particular exemplary embodiment are generally not limited to the particular exemplary embodiment, but are interchangeable and can be used in a selected exemplary embodiment where applicable, even if not specifically shown or described. These modifications should not be considered as departing from the spirit and scope of the present disclosure, and all such modifications that would be apparent to a person of ordinary skill in the art are intended to be included within the scope of the appended claims.

Claims

1. A device for processing a substrate, the device include: a chamber having a processing space; a supporting unit for supporting and rotating a substrate in the processing space; a liquid discharge unit including a nozzle for discharging the processing liquid in a liquid phase onto the substrate supported by the support unit; as well as a liquid supply unit for supplying the treatment liquid to the liquid discharge unit, wherein the nozzle is spaced apart from the center of the substrate when viewed from above, so that when the processing liquid is supplied to the substrate rotated by the supporting unit, the processing liquid is not ejected by the nozzle at a position overlapping with the center of the substrate. 2 . The apparatus according to claim 1 , wherein the nozzle is disposed at a position spaced apart from a top surface of the substrate by a predetermined distance in an upward direction to supply the processing liquid. 3 . The apparatus according to claim 2 , wherein the nozzle supplies the processing liquid in a direction perpendicular to the top surface of the substrate. 4 . The apparatus of claim 1 , wherein the nozzle discharges the processing liquid at a position close to the center of the substrate between a distance from the center of the substrate and a distance from an edge of the substrate. 5 . The apparatus according to claim 4 , wherein the processing liquid supplied to the substrate is spread to each of a center side of the substrate and an edge side of the substrate.

6. An apparatus according to claim 5, wherein when a position where the processing liquid is supplied is referred to as a first position and a center of a distance from a center of the substrate to an edge of the substrate is referred to as a second position, the first position is closer to the center of the substrate than the second position. 7 . The apparatus of claim 6 , wherein when a distance from a center of the substrate to an edge of the substrate is referred to as a first distance, the first position is selected within a range of 5% to 15% of the first distance from the center of the substrate.

8. The apparatus of claim 1, wherein the process liquid comprises an ammonia component.

9. The apparatus of claim 1, wherein organic residues and particles are formed on the substrate before the treating liquid is supplied.

10. The apparatus according to claim 1, wherein the treatment liquid is formed with a dissolved oxygen amount of 1500 ppb to 2500 ppb.

11. The device according to claim 1, further comprising: include: a dissolved oxygen amount detection unit, the dissolved oxygen amount detection unit being connected to the liquid discharge unit and detecting the dissolved oxygen amount of the treated liquid and calculating dissolved oxygen amount data; as well as A controller is configured to receive the dissolved oxygen amount data in conjunction with the dissolved oxygen amount detection unit, and to change a position for supplying the treatment liquid according to the dissolved oxygen amount data.

12. A substrate processing method for processing a substrate, the substrate processing method include: a processing operation of supplying a processing liquid through a nozzle onto the substrate which is rotated and simultaneously placed on a supporting unit; as well as a rinsing operation of supplying another processing liquid through a nozzle onto the substrate rotating while being placed on the supporting unit to remove the processing liquid; wherein in the processing operation, the nozzle is spaced apart from the center of the substrate when viewed from above so that when the processing liquid is supplied to the substrate rotated by the supporting unit, the processing liquid is not ejected at a position overlapping with the center of the substrate. 13 . The substrate processing method according to claim 12 , wherein in the processing operation, the nozzle is disposed at a position spaced apart from a top surface of the substrate by a predetermined distance in an upward direction to supply the processing liquid. 14 . The substrate processing method according to claim 12 , wherein in the processing operation, the nozzle supplies the processing liquid in a direction perpendicular to the top surface of the substrate. 15 . The substrate processing method according to claim 12 , wherein in the processing operation, the nozzle discharges the processing liquid at a position close to the center of the substrate between a distance to the center of the substrate and a distance to an edge of the substrate. 16 . The substrate processing method according to claim 15 , wherein in the processing operation, the processing liquid supplied to the substrate is spread to each of a center side of the substrate and an edge side of the substrate.

17. A substrate processing method according to claim 16, wherein in the processing operation, when the position where the processing liquid is supplied is referred to as a first position, and the center of the distance from the center of the substrate to the edge of the substrate is referred to as a second position, the first position is closer to the center of the substrate than the second position.

18. The substrate processing method according to claim 17, wherein in the processing operation, when a distance from a center of the substrate to an edge of the substrate is referred to as a first distance, the first position is selected within a range of 5% to 15% of the first distance from the center of the substrate.

19. The substrate processing method according to claim 12, wherein the processing liquid contains an ammonia component.

20. An apparatus for processing a substrate, the apparatus include: a chamber having a processing space; a supporting unit, the supporting unit being used to support and rotate the substrate in the processing space; a liquid discharge unit including a nozzle for discharging the processing liquid in a liquid phase onto the substrate supported by the support unit; a liquid supply unit, the liquid supply unit being used to supply the treatment liquid to the liquid discharge unit; a dissolved oxygen amount detection unit, the dissolved oxygen amount detection unit being connected to the liquid discharge unit and detecting the dissolved oxygen amount of the treated liquid and calculating dissolved oxygen amount data; as well as a controller, the controller being linked with the dissolved oxygen detection unit to receive the dissolved oxygen data, and changing the position where the treatment liquid is supplied according to the dissolved oxygen data, wherein the nozzle is spaced apart from the center of the substrate when viewed from above, so that when the treatment liquid is supplied to the substrate rotated by the supporting unit, the treatment liquid is not ejected by the nozzle at a position overlapping with the center of the substrate, the nozzle is arranged to be spaced apart from the top surface of the substrate by a predetermined distance in an upward direction to supply the treatment liquid, the nozzle supplies the treatment liquid in a direction perpendicular to the top surface of the substrate, the nozzle discharges the treatment liquid at a position close to the center of the substrate between the distance to the center of the substrate and the distance to the edge of the substrate, and the treatment liquid supplied to the substrate spreads to the edges of the substrate each of the center side and the edge side of the substrate, when the position where the treatment liquid is supplied is referred to as a first position and the center of the distance from the center of the substrate to the edge of the substrate is referred to as a second position, the first position is closer to the center of the substrate than the second position, when the distance from the center of the substrate to the edge of the substrate is referred to as a first distance, the first position is selected within a range of 5% to 15% of the first distance from the center of the substrate, the treatment liquid contains an ammonia component, organic residues and particles are formed on the substrate before the treatment liquid is supplied, and the treatment liquid is formed with a dissolved oxygen amount of 1500ppb to 2500ppb.

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