A semiconductor laser having an exciton polaron topological layer

Abstract

The application discloses a semiconductor laser with an exciton polaron topological layer, which comprises, from bottom to top, a substrate, a lower confining layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confining layer in sequence, and has the exciton polaron topological layer; the exciton polaron topological layer comprises a first exciton polaron topological layer, a second exciton polaron topological layer and a third exciton polaron topological layer, the first exciton polaron topological layer is located between the lower confining layer and the substrate, the second exciton polaron topological layer is located in the lower confining layer, and the third exciton polaron topological layer is located between the lower confining layer and the lower waveguide layer. The application uses exciton polaron as a medium for population inversion, enhances the stability of exciton polaron quasi-particles, enhances the laser oscillation of the laser, reduces the threshold current of the energy level particle number inversion of the laser, and improves the capture effect of the depletion region, the deep energy level trap and the insulating interface layer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, and more particularly to a semiconductor laser having an exciton polariton topology layer. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] Lasers differ significantly from nitride semiconductor light-emitting diodes.

[0004] 1) Lasers are generated by stimulated emission of charge carriers. They have a small half-width at half-maximum and very high brightness. The output power of a single laser can be in the W range. In contrast, nitride semiconductor light-emitting diodes are spontaneously emitted, and the output power of a single light-emitting diode is in the mW range.

[0005] 2) The operating current density of the laser reaches KA / cm². 2 The efficiency is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more severe electron-hole mismatch, leading to more severe efficiency degradation and the Droop effect.

[0006] 3) Light-emitting diodes emit spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence. In contrast, lasers emit stimulated transition radiation, where the energy of the induced photon should be equal to the energy difference of the electron transition, producing coherent light that is identical to the induced photon.

[0007] 4) Different principles: Light emission diodes emit light by electrons and holes jumping to the active layer or pn junction under the action of external voltage, generating radiative recombination. Lasers, on the other hand, require certain lasing conditions to be met before they can emit light. This requires the carriers in the active region to be reversed, the stimulated emission light to oscillate back and forth in the resonant cavity, and the propagation in the gain medium to amplify the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] The lattice mismatch and large strain in the active layer induce a strong piezoelectric polarization effect, resulting in a strong QCSE quantum confinement Stark effect. This increases the valence band difference of the laser, suppresses hole injection, and makes hole transport in the quantum well more difficult. The carrier injection is non-uniform, resulting in non-uniform gain and limiting the improvement of laser electro-lasing gain. According to laser theory, after the laser emits stable laser saturation, the quasi-Fermi levels of holes and electrons are pinned, the injected carriers are completely converted into photons for output, the optical gain reaches saturation, the junction voltage also reaches saturation, and the carrier concentration in the cavity does not change with the current.

[0010] The breaking of symmetry corresponding to the equilibrium phase transition in lasers causes discontinuities or abrupt changes at the threshold, such as conductance jumps, capacitance drops, junction voltage jumps, series resistance drops, and ideality factor jumps. These discontinuities are mainly influenced by factors such as the trapping effect in the depletion region, surface conditions, edge effects, deep level traps, insulating interface layers, and series resistance. Summary of the Invention

[0011] This invention proposes a semiconductor laser with an exciton polariton topology layer. The exciton polariton topology layer utilizes exciton polaritons as a medium for population inversion, enhancing the stability of exciton polariton quasi-particles, improving laser oscillation, and reducing the threshold current for population inversion in laser energy levels. At the same time, the exciton polaritons in the exciton polariton topology layer have a faster relaxation rate, improving the trapping effect in the depletion region, deep level traps, and insulating interface layer.

[0012] The present invention provides a semiconductor laser with an exciton polariton topology layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. The semiconductor laser has an exciton polariton topology layer; the exciton polariton topology layer includes a first exciton polariton topology layer, a second exciton polariton topology layer, and a third exciton polariton topology layer. The first exciton polariton topology layer is located between the lower confinement layer and the substrate, the second exciton polariton topology layer is located inside the lower confinement layer, and the third exciton polariton topology layer is located between the lower confinement layer and the lower waveguide layer.

[0013] The Al / O element ratio distribution of the first exciton polariton topology layer has an approximate function y = sinx / x 2 The third quadrant curve distribution; the Si / H element ratio distribution of the first exciton polariton topological layer has an approximate function y = ax 2 Curve distribution (a < 0); the C / O element ratio distribution of the first exciton polariton topology layer has an approximate function y = (b x -1) / (b x +1)(0<b<1);

[0014] The In / O element ratio distribution of the second exciton polariton topology layer has an approximate function y = cx. 2 Distribution (c < 0) curve distribution; the Si / O element ratio distribution of the second exciton polariton topology layer has an approximate function y = dx 2 Distribution (d < 0) curve distribution; the C / O element ratio distribution of the second exciton polaron topology layer has an approximate function y = x 2 / e x Curve distribution;

[0015] The Al / H elemental ratio distribution of the third exciton polariton topology layer has an approximate function y = lnx / x curve distribution; the Si / H elemental ratio of the third exciton polariton topology layer has an approximate function y = x 2 / e x The C / O element ratio of the third exciton polariton topology layer has an approximately linear function curve distribution.

[0016] Preferably, the well layer of the active layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10–80 angstroms; the barrier layer of the active layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10–120 angstroms; the active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1.

[0017] Preferably, the thickness of the first exciton polariton topology layer is m: 20 ≤ m ≤ 80000 angstroms; the thickness of the second exciton polariton topology layer is n: 50 ≤ n ≤ 90000 angstroms; and the thickness of the third exciton polariton topology layer is l: 10 ≤ l ≤ 70000 angstroms.

[0018] Preferably, the thicknesses of the first exciton polariton topology layer, the second exciton polariton topology layer, and the third exciton polariton topology layer have the following relationship: l≤m≤n.

[0019] Preferably, the lower waveguide layer is InGaN with a thickness of 10–8000 Å; the upper waveguide layer is InGaN with a thickness of 10–8000 Å; the upper and lower confinement layers are any one or any combination of Al InGaN, Al InN, Al GaN, InGaN, GaN, Al InN, Al N, and InN, with a thickness of 10–9000 Å.

[0020] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, Ga2O3, diamond, sapphire / AlN composite substrate, sapphire / SiN x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0021] Compared to existing technologies, the semiconductor laser with an exciton polariton topology layer provided by this invention has the following advantages: the exciton polariton topology layer utilizes exciton polaritons as a population inversion medium, enhancing the stability of exciton polariton quasi-particles, strengthening laser oscillation, and reducing the threshold current for population inversion at laser levels. Simultaneously, the exciton polaritons in the exciton polariton topology layer have a faster relaxation rate, improving the trapping effect in the depletion region, deep level traps, and insulating interface layers. Furthermore, the exciton polaritons in the exciton polariton topology layer exhibit strong metallicity, suppressing electron scattering at surfaces and interfaces, and forming repetitive... Bloch states induce quantum oscillations and linear cyclotron motion of charge carriers, increasing electron mobility and conductivity, reducing series resistance and voltage of laser elements after lasing, and improving the slope efficiency and luminous efficiency of laser elements. The exciton polaritons in the exciton polariton topology layer have strong metallicity, which modulates the spin Hall electron injection of the electrodes, increases the spin conductivity of the lower waveguide layer and the lower confinement layer, further reduces series resistance and voltage, and increases the proportion of holes and electrons pinned to the quasi-Fermi level. It also modulates the symmetry breaking away from the equilibrium phase transition, eliminating the problems of discontinuous or abrupt junction voltage jumps, conductance jumps, and series resistance drops in laser elements. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the structure of a semiconductor laser with an exciton polariton topology layer according to an embodiment of the present invention;

[0023] Figure 2 This is a SIMS secondary ion mass spectrum of a semiconductor laser with an exciton polariton topological layer according to an embodiment of the present invention;

[0024] Figure 3 This is a SIMS secondary ion mass spectrum of a semiconductor laser with an exciton polariton topology layer according to an embodiment of the present invention.

[0025] Reference numerals: 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer; 105: Upper confinement layer; 106: Exciton polariton topology layer; 106a: First exciton polariton topology layer; 106b: Second exciton polariton topology layer; 106c: Third exciton polariton topology layer. Detailed Implementation

[0026] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0027] To address the aforementioned issues, the following detailed description and explanation of a semiconductor laser with an exciton polariton topology layer provided in this application will be provided through specific embodiments.

[0028] Reference Figure 1-3 The present invention provides a semiconductor laser with an exciton polariton topology layer, comprising, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. The semiconductor laser is characterized by having an exciton polariton topology layer 106; the exciton polariton topology layer 106 includes a first exciton polariton topology layer 106a, a second exciton polariton topology layer 106b, and a third exciton polariton topology layer 106c. The first exciton polariton topology layer 106a is located between the lower confinement layer 101 and the substrate 100, the second exciton polariton topology layer 106b is located inside the lower confinement layer 101, and the third exciton polariton topology layer 106c is located between the lower confinement layer 101 and the lower waveguide layer 102.

[0029] The Al / O element ratio distribution of the first exciton polariton topology 106a has an approximate function y = sinx / x. 2 The third quadrant curve distribution; the Si / H elemental ratio distribution of the first exciton polariton topological layer 106a has an approximate function y = ax 2 Curve distribution (a < 0); the C / O element ratio distribution of the first exciton polariton topology 106a has an approximate function y = (b x -1) / (b x +1)(0<b<1);

[0030] The In / O element ratio distribution of the second exciton polaron topology 106b has an approximate function y = cx. 2Distribution (c < 0) curve distribution; the Si / O element ratio distribution of the second exciton polariton topological layer 106b has an approximate function y = dx 2 Distribution (d < 0) curve distribution; the C / O element ratio distribution of the second exciton polaron topology 106b has an approximate function y = x 2 / e x Curve distribution;

[0031] The Al / H elemental ratio distribution of the third exciton polariton topology layer 106c has an approximate function y = lnx / x curve distribution; the Si / H elemental ratio of the third exciton polariton topology layer 106c has an approximate function y = x 2 / e x The C / O element ratio of the third exciton polaron topology layer 106c has an approximately linear function curve distribution.

[0032] The exciton polariton topology layer utilizes exciton polaritons as a medium for population inversion, enhancing the stability of exciton polariton quasiparticles, strengthening laser oscillations, and reducing the threshold current for population inversion in laser energy levels. Simultaneously, the exciton polaritons in the exciton polariton topology layer possess strong metallic properties, suppressing electron scattering at surfaces and interfaces, forming repeating Bloch states to induce quantum oscillations and linear cyclotron motion of charge carriers, thereby improving electron mobility and conductivity, reducing the series resistance and voltage of laser elements after lasing, and enhancing the slope efficiency and luminous efficiency of laser elements.

[0033] The thickness of the first exciton polariton topology layer 106a is m: 20 ≤ m ≤ 80000 angstroms; the thickness of the second exciton polariton topology layer 106b is n: 50 ≤ n ≤ 90000 angstroms; and the thickness of the third exciton polariton topology layer 106c is l: 10 ≤ l ≤ 70000 angstroms. The thicknesses of the first exciton polariton topology layer 106a, the second exciton polariton topology layer 106b, and the third exciton polariton topology layer 106c have the following relationship: l ≤ m ≤ n.

[0034] In this invention, the well layer of the active layer 103 is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10–80 angstroms; the barrier layer of the active layer 103 is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10–120 angstroms; the active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1. The lower waveguide layer 102 is InGaN with a thickness of 10–8000 angstroms; the upper waveguide layer 104 is InGaN with a thickness of 10–8000 angstroms; the upper confinement layer 105 and the lower confinement layer 101 are any one or any combination of AlInGaN, AlInN, AlGaN, InGaN, GaN, AlInN, AlN, and InN, with a thickness of 10 angstroms to 9000 angstroms. The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, Ga2O3, diamond, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0035] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A semiconductor laser having an exciton polariton topology layer, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that, The semiconductor laser has an exciton polariton topology layer (106); the exciton polariton topology layer (106) includes a first exciton polariton topology layer (106a), a second exciton polariton topology layer (106b) and a third exciton polariton topology layer (106c), the first exciton polariton topology layer (106a) is located between the lower confinement layer (101) and the substrate (100), the second exciton polariton topology layer (106b) is located inside the lower confinement layer (101), and the third exciton polariton topology layer (106c) is located between the lower confinement layer (101) and the lower waveguide layer (102); The Al / O element ratio distribution of the first exciton polariton topology layer (106a) has an approximate function y1 = sinx1 / x1 2 The third quadrant curve distribution; the Si / H element ratio distribution of the first exciton polariton topological layer (106a) has an approximate function y2 = ax1. 2 The curve distribution, where a < 0; the C / O element ratio distribution of the first exciton polariton topology layer (106a) has an approximate function. Where 0 < b < 1; The In / O element ratio distribution of the second exciton polaron topology layer (106b) has an approximate function y4 = cx2. 2 The distribution curve is given, where c < 0; the Si / O element ratio distribution of the second exciton polariton topology layer (106b) has an approximate function y5 = dx2. 2 The distribution curve is given, where d < 0; the C / O element ratio distribution of the second exciton polaron topology (106b) has an approximate function. Curve distribution; The Al / H elemental ratio distribution of the third exciton polariton topology layer (106c) has an approximate function y7 = lnx3 / x3 curve distribution; the Si / H elemental ratio of the third exciton polariton topology layer (106c) has an approximate function The C / O element ratio of the third exciton polaron topology layer (106c) has an approximately linear function curve distribution.

2. A semiconductor laser with an exciton polariton topological layer according to claim 1, characterized in that, The active layer (103) has a well layer of any one or any combination of InGaN, InN, AlInN, and GaN with a thickness of 10 to 80 angstroms, and a barrier layer of any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN with a thickness of 10 to 120 angstroms. The active layer (103) is a periodic structure composed of a well layer and a barrier layer with a period number of p, where 1 ≤ p ≤ 3.

3. A semiconductor laser with an exciton polariton topological layer according to claim 1, characterized in that, The thickness of the first exciton polariton topology layer (106a) is m: 20 ≤ m ≤ 80000 angstroms; the thickness of the second exciton polariton topology layer (106b) is n: 50 ≤ n ≤ 90000 angstroms; and the thickness of the third exciton polariton topology layer (106c) is l: 10 ≤ l ≤ 70000 angstroms.

4. A semiconductor laser with an exciton polariton topological layer according to claim 3, characterized in that, The thicknesses of the first exciton polariton topology layer (106a), the second exciton polariton topology layer (106b), and the third exciton polariton topology layer (106c) have the following relationship: l≤m≤n.

5. A semiconductor laser with an exciton polariton topological layer according to claim 1, characterized in that, The lower waveguide layer (102) is InGaN with a thickness of 10 to 8000 angstroms; the upper waveguide layer (104) is InGaN with a thickness of 10 to 8000 angstroms; the upper confinement layer (105) and the lower confinement layer (101) are any one or any combination of AlInGaN, AlInN, AlGaN, InGaN, GaN, AlInN, AlN, and InN with a thickness of 10 to 9000 angstroms.

6. A semiconductor laser with an exciton polariton topological layer according to claim 1, characterized in that, The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, Ga2O3, diamond, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Composite substrate, sapphire / SiO2 / SiN x The composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, or LiAlO2 / LiGaO2 composite substrate.

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