Power amplifier device suitable for T / R assembly

Abstract

The invention provides a power amplifier device suitable for a T / R assembly. The power amplifier device comprises an electrostatic discharge circuit, a biasing circuit and a radio frequency amplification circuit. The other end of the electrostatic discharge circuit is connected with the input end of the biasing circuit; the output end of the biasing circuit is connected with the input and the output of each stage of amplification module of the radio frequency amplification circuit; the radio frequency amplification circuit comprises a three-stage amplification module; the first-stage amplification module is driven by a single transistor, the second-stage amplification module is driven by four transistors which are synthesized in pairs, and the third-stage amplification module is driven by eight transistors which are connected in parallel to amplify and output. A plurality of transistors are connected in parallel in the second stage and the third stage of the radio frequency amplification circuit, so that single-side power supply of the power amplifier is realized, the channel temperature of the transistors is effectively reduced, the thermal stability of a chip is improved, and the requirement of T / R component chip integration design is met.

Description

Technical Field

[0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a power amplifier device suitable for a T / R component. Background Art

[0002] A power amplifier (PA) is an amplifier that can achieve maximum signal power output under certain conditions. A T / R component is the part between the radio frequency and the antenna in a wireless transceiver system. That is, a T / R component with one end connected to the antenna and the other end connected to the intermediate frequency processing unit constitutes a wireless transceiver system. Its function is to amplify, phase shift, and attenuate the signal.

[0003] The power amplifier is an important part of the transmission path of the T / R component. The power amplifier chips currently on the market are basically of conventional structural design, that is, the input and output ends are in the same direction and adopt a dual-sided power supply design. When applied to the T / R component chip integration design, this structure often cannot meet the requirements of the T / R component chip integration design. Therefore, designing a power amplifier chip with a special-shaped structure, single-sided power supply, and high thermal stability has become an important way to solve this problem. Summary of the invention

[0004] In order to solve the above technical problems, the present invention proposes a power amplifier device suitable for a T / R component, and provides a power amplifier chip with a special-shaped structure, single-side power supply, and high thermal stability, which meets the requirements of T / R component chip integration design.

[0005] To achieve the above object, the present invention adopts the following technical solutions:

[0006] A power amplifier device suitable for a T / R assembly, comprising: a plurality of electrostatic discharge circuits, a plurality of bias circuits and a radio frequency amplification circuit;

[0007] One end of the electrostatic discharge circuit is grounded, and the other end is connected to the input end of the bias circuit; the output end of the bias circuit is connected to the input and output of each stage of the amplification module of the radio frequency amplification circuit;

[0008] The radio frequency amplification circuit includes a first-stage amplification module, a second-stage amplification module and a third-stage amplification module. The first-stage amplification module is driven by a single transistor, the second-stage amplification module is driven by four transistors in pairs, and the third-stage amplification module is driven by eight transistors in parallel.

[0009] Furthermore, the first-stage amplification module and the second-stage amplification module are connected by a capacitor; the second-stage amplification module and the third-stage amplification module are connected by a capacitor; and the output end of the third-stage amplification module is connected to the output end of the power amplifier device through a capacitor.

[0010] Furthermore, the electrostatic discharge circuit is connected to the ground through a diode.

[0011] Further, the bias circuit includes a gate bias subcircuit and a drain bias subcircuit;

[0012] The gate bias subcircuit uses a resistor and an inductor connected in series;

[0013] The drain bias subcircuit adopts a capacitor-inductor filter circuit.

[0014] Furthermore, the gate bias subcircuit is connected to the input of each stage of the amplification module; and the drain bias subcircuit is connected to the output of each stage of the amplification module.

[0015] Furthermore, the input port of the power amplifier device forms an angle of 90 degrees with the amplifier path.

[0016] Furthermore, the number of the electrostatic release circuits is equal to the number of the bias circuits.

[0017] Furthermore, the transistor is a pHEMT transistor.

[0018] The effects provided in the content of the invention are only the effects of the embodiments, not all the effects of the invention. One of the above technical solutions has the following advantages or beneficial effects:

[0019] The present invention proposes a power amplifier device suitable for T / R components, including: multiple electrostatic discharge circuits, multiple bias circuits and radio frequency amplification circuits; one end of the electrostatic discharge circuit is grounded, and the other end is connected to the input end of the bias circuit; the output end of the bias circuit is connected to the input and output of each stage of the amplification module of the radio frequency amplification circuit; the radio frequency amplification circuit includes a first stage amplification module, a second stage amplification module and a third stage amplification module, the first stage amplification module is driven by a single transistor, the second stage amplification module is driven by four transistors in pairs, and the third stage amplification module is amplified and output by eight transistors in parallel. The present invention provides a power amplifier chip with a special-shaped structure, single-side power supply and high thermal stability, which meets the requirements of T / R component chip integration design.

[0020] The present invention proposes a power amplifier device suitable for a T / R component. The chip adopts MMIC technology to design the power amplifier. The chip area is only 3mm×2.3mm. The second and third stages of the radio frequency amplification circuit adopt multiple transistors in parallel to achieve single-side power supply, which better solves the integrated design requirements of the T / R component.

[0021] The present invention proposes a power amplifier device suitable for a T / R component. The third-stage amplification structure of the radio frequency amplification circuit adopts eight transistors in parallel, which realizes single-side power supply and effectively solves the problem of excessively high transistor channel temperature, thereby improving the thermal stability of the chip.

[0022] The power amplifier device suitable for a T / R component proposed by the present invention effectively solves the stability problem and realizes that both the input end and the output end are matched to 50Ω, so that the chip can better meet the integrated design requirements of the T / R component. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a schematic diagram of a power amplifier device applicable to a T / R component proposed in Embodiment 1 of the present invention;

[0024] Figure 2 This is a connection diagram of an electrostatic discharge circuit and a bias circuit in a power amplifier device suitable for a T / R component proposed in Embodiment 1 of the present invention. DETAILED DESCRIPTION

[0025] In order to clearly illustrate the technical features of the present solution, the present invention is described in detail below through specific implementation methods and in conjunction with the accompanying drawings. The disclosure below provides many different embodiments or examples for realizing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. In addition, the present invention may repeat reference numbers and / or letters in different examples. This repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. It should be noted that the components illustrated in the accompanying drawings are not necessarily drawn to scale. The present invention omits the description of known components and processing techniques and processes to avoid unnecessary limitations on the present invention.

[0026] Example 1

[0027] Embodiment 1 of the present invention proposes a power amplifier device suitable for a T / R component, which is used to solve the problem that the power amplifier chip in the prior art cannot meet the requirements of the T / R component; Figure 1 A schematic diagram of a power amplifier device applicable to a T / R component proposed in Embodiment 1 of the present invention, the device comprising a plurality of electrostatic discharge circuits, a plurality of bias circuits and a radio frequency amplification circuit;

[0028] One end of the electrostatic discharge circuit is grounded, and the other end is connected to the input end of the bias circuit; the output end of the bias circuit is connected to the input and output of each stage of the amplification module of the radio frequency amplification circuit;

[0029] The radio frequency amplification circuit includes a first-stage amplification module, a second-stage amplification module and a third-stage amplification module. The first-stage amplification module is driven by a single transistor, the second-stage amplification module is driven by four transistors in pairs, and the third-stage amplification module uses eight transistors in parallel for amplification output.

[0030] The first-stage amplifier module and the second-stage amplifier module are connected by capacitors; the second-stage amplifier module and the third-stage amplifier module are connected by capacitors; the output end of the third-stage amplifier module is connected to the output end of the power amplifier device through a capacitor to achieve an output power of ≥2W. The eight transistors in the last stage are connected in parallel to effectively reduce the channel temperature and improve the thermal stability of the chip; to be suitable for T / R component integration, the amplifier input port and the amplifier path are at a 90-degree angle, and the RF signal is input from the top, which is convenient for the connection between the power amplifier and the front-stage circuit. In addition, the amplifier input and output ends are both 50Ω matched, which is convenient for chip cascade design.

[0031] The radio frequency amplifier circuit in the present application adopts a three-stage pHEMT transistor amplification structure.

[0032] In the present application, a plurality of single-sided power supply ports Vg1, Vd1, Vg2, Vd2, Vg3, and Vd3 are included, each of which is connected to an electrostatic discharge circuit; Figure 2 This is a connection diagram of an electrostatic discharge circuit and a bias circuit in a power amplifier device suitable for a T / R component proposed in Embodiment 1 of the present invention.

[0033] The electrostatic discharge circuit is connected to the power supply port and adopts a parallel diode structure to the ground, which can eliminate the damage of static electricity to the chip and improve the electrostatic protection capability.

[0034] The bias circuit is the power supply circuit of the transistor, which can provide independent gate negative voltage power supply and drain positive voltage power supply for each stage of transistor, including gate bias subcircuit and drain bias subcircuit; the gate bias subcircuit adopts resistor and inductor in series; the drain bias subcircuit adopts capacitor and inductor filter circuit. The gate bias subcircuit is connected to the input of each stage of amplifier module; the drain bias subcircuit is connected to the output of each stage of amplifier module. The gate bias subcircuit improves the stability of the transistor by adopting the form of resistor and inductor in series, and the drain bias subcircuit participates in the matching design of the transistor while supplying power.

[0035] The gate power supply part of the bias circuit adopts a series connection of resistors and inductors to improve the stability of the transistor. The drain bias circuit of the second-stage transistor of the amplifier adopts a parallel structure design to achieve single-sided power supply of the amplifier chip. The drain bias circuit of the third-stage transistor of the amplifier adopts a BUS-BAR structure to improve the current carrying capacity and achieve single-sided power supply of the amplifier chip.

[0036] Embodiment 1 of the present invention proposes a power amplifier device suitable for a T / R component, and provides a power amplifier chip with a special-shaped structure, single-side power supply, and high thermal stability, which meets the requirements of T / R component chip integration design.

[0037] Embodiment 1 of the present invention proposes a power amplifier device suitable for a T / R component. The chip adopts MMIC technology to design the power amplifier. The chip area is only 3mm×2.3mm. The second and third stages of the radio frequency amplification circuit adopt multiple transistors in parallel to achieve single-sided power supply, which better solves the integrated design requirements of the T / R component.

[0038] Embodiment 1 of the present invention proposes a power amplifier device suitable for a T / R component. The third-stage amplification structure of the radio frequency amplification circuit adopts eight transistors in parallel, which realizes single-side power supply and effectively solves the problem of excessive transistor channel temperature, thereby improving the thermal stability of the chip.

[0039] The power amplifier device suitable for a T / R component proposed in Embodiment 1 of the present invention effectively solves the stability problem and achieves matching of both the input and output ends to 50Ω, so that the chip better meets the integrated design requirements of the T / R component.

[0040] Example 2

[0041] Based on the power amplifier device applicable to the T / R component proposed in Embodiment 1 of the present invention, Embodiment 2 of the present invention further proposes a T / R component. The component includes the power amplifier device applicable to the T / R component disclosed in Embodiment 1. The structure of the device includes: multiple electrostatic discharge circuits, multiple bias circuits and a radio frequency amplification circuit;

[0042] One end of the electrostatic discharge circuit is grounded, and the other end is connected to the input end of the bias circuit; the output end of the bias circuit is connected to the input and output of each stage of the amplification module of the radio frequency amplification circuit;

[0043] The radio frequency amplification circuit includes a first-stage amplification module, a second-stage amplification module and a third-stage amplification module. The first-stage amplification module is driven by a single transistor, the second-stage amplification module is driven by four transistors in pairs, and the third-stage amplification module is driven by eight transistors in parallel.

[0044] The first-stage amplification module and the second-stage amplification module are connected by capacitors; the second-stage amplification module and the third-stage amplification module are connected by capacitors; the output end of the third-stage amplification module is connected to the output end of the power amplifier device through a capacitor.

[0045] The electrostatic discharge circuit is connected to the ground using a diode.

[0046] The bias circuit includes a gate bias subcircuit and a drain bias subcircuit; the gate bias subcircuit adopts a resistor and an inductor connected in series; the drain bias subcircuit adopts a capacitor and an inductor filtering circuit.

[0047] The gate bias subcircuit is connected to the input of each stage of the amplification module; and the drain bias subcircuit is connected to the output of each stage of the amplification module.

[0048] The input port of the power amplifier device is at a 90 degree angle to the amplifier path.

[0049] The number of electrostatic discharge circuits is equal to the number of bias circuits.

[0050] The transistor adopts a pHEMT transistor.

[0051] A T / R component proposed in Example 1 of the present invention is a power amplifier device suitable for the T / R component in the T / R component. The chip adopts MMIC technology to design the power amplifier. The chip area is only 3mm×2.3mm. The second and third stages of the radio frequency amplification circuit adopt multiple transistors in parallel to achieve single-sided power supply, which better solves the integrated design requirements of the T / R component.

[0052] A T / R component proposed in Example 1 of the present invention is a power amplifier device suitable for the T / R component in the T / R component. The third-stage amplification structure of the radio frequency amplification circuit adopts eight transistors in parallel to achieve single-sided power supply and effectively solve the problem of excessive transistor channel temperature, thereby improving the thermal stability of the chip.

[0053] A T / R component proposed in Example 1 of the present invention, a power amplifier device suitable for the T / R component in the T / R component effectively solves the stability problem and achieves matching of both the input and output ends to 50Ω, so that the chip better meets the integrated design requirements of the T / R component.

[0054] The description of the relevant parts of a T / R component provided in Example 2 of the present application can be found in the detailed description of the corresponding parts of a power amplifier device suitable for a T / R component provided in Example 1 of the present application, and will not be repeated here.

[0055] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the term "include", "comprise" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment that includes a series of elements are inherent to the elements. In the absence of more restrictions, the elements limited by the sentence "comprise one..." do not exclude the presence of other identical elements in the process, method, article or equipment that includes the elements. In addition, the above-mentioned technical solution provided in the embodiment of the present application is consistent with the corresponding technical solution in the prior art in principle, and the part is not described in detail, so as not to repeat too much.

[0056] Although the above describes the specific implementation of the present invention in conjunction with the accompanying drawings, it is not intended to limit the scope of protection of the present invention. For those skilled in the art, other different forms of modifications or deformations can be made on the basis of the above description. It is not necessary and impossible to list all the implementation methods here. On the basis of the technical solution of the present invention, various modifications or deformations that can be made by those skilled in the art without creative work are still within the scope of protection of the present invention.

Claims

1. A power amplifier device suitable for a T / R assembly, characterized in that: include: Multiple electrostatic discharge circuits, multiple bias circuits and radio frequency amplification circuits; One end of the electrostatic discharge circuit is grounded, and the other end is connected to the input end of the bias circuit; The output end of the bias circuit is connected to the input and output of each stage of the amplification module of the radio frequency amplification circuit; The radio frequency amplification circuit includes a first-stage amplification module, a second-stage amplification module and a third-stage amplification module. The first-stage amplification module is driven by a single transistor, the second-stage amplification module is driven by four transistors in pairs, and the third-stage amplification module is driven by eight transistors in parallel.

2. A power amplifier device suitable for a T / R assembly according to claim 1, characterized in that: The first-stage amplification module and the second-stage amplification module are connected by capacitors; the second-stage amplification module and the third-stage amplification module are connected by capacitors; the output end of the third-stage amplification module is connected to the output end of the power amplifier device through a capacitor.

3. A power amplifier device suitable for a T / R assembly according to claim 1, characterized in that: The electrostatic discharge circuit is connected to the ground through a diode.

4. A power amplifier device suitable for a T / R assembly according to claim 1, characterized in that: The bias circuit includes a gate bias subcircuit and a drain bias subcircuit; The gate bias subcircuit uses a resistor and an inductor connected in series; The drain bias subcircuit adopts a capacitor-inductor filter circuit.

5. A power amplifier device suitable for a T / R assembly according to claim 4, characterized in that: The gate bias subcircuit is connected to the input of each stage of the amplification module; the drain bias subcircuit is connected to the output of each stage of the amplification module.

6. A power amplifier device suitable for a T / R assembly according to claim 1, characterized in that: The input port of the power amplifier device is at a 90 degree angle to the amplifier path.

7. A power amplifier device suitable for a T / R assembly according to claim 1, characterized in that: The number of the electrostatic discharge circuits is equal to the number of the bias circuits.

8. A power amplifier device suitable for a T / R assembly according to claim 1, characterized in that: The transistor is a pHEMT transistor.

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