Display substrate, display module and display device

Abstract

The invention provides a display substrate, a display module and a display device. The display substrate comprises a driving substrate which comprises a display area and an edge area surrounding the display area; the packaging layer is located on one side of the display area and extends to one side of a part of the edge area; the packaging layer comprises an organic packaging layer and a first inorganic packaging layer located on one side, deviating from the driving substrate, of the organic packaging layer; the near field communication structure comprises a near field communication coil which is located between the first inorganic packaging layer on one side of the edge area and the driving substrate. The reliability of the display substrate can be improved.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a display substrate, a display module and a display device. Background Art

[0002] Flexible technology has gradually expanded its application to wearable products, whose main functions include near-field communication (NFC), electronic SIM cards (eSIMs), blood oxygen monitoring, and heart rate monitoring. Wearable products have a compact internal space, and the NFC structure is combined with an active-matrix light-emitting diode (AMOLED) display substrate. Typically, a circuit board containing an NFC coil is attached to the back of the substrate in the AMOLED display substrate.

[0003] In the related art, the thickness of the display module increases, and the near-field communication coil is prone to falling off, especially when bent; in addition, the display panel includes a driving circuit layer, an electrode layer and a touch layer. The near-field communication signal will be affected by the metal materials in the driving circuit layer, the electrode layer and the touch layer, resulting in poor near-field communication (NFC) signal transmission and reduced reliability. Summary of the Invention

[0004] The technical problem to be solved by the present invention is how to overcome the problem of poor reliability of display substrates in related technologies.

[0005] In order to solve the above technical problems, the present invention provides a display substrate, including: a driving substrate, the driving substrate including a display area and an edge area surrounding the display area; an encapsulation layer, located on one side of the display area and extending to a side of part of the edge area; the encapsulation layer including an organic encapsulation layer and a first inorganic encapsulation layer located on a side of the organic encapsulation layer away from the driving substrate; a near-field communication structure, including: a near-field communication coil, located between the first inorganic encapsulation layer on one side of the edge area and the driving substrate.

[0006] Optionally, it further includes: a pixel defining layer located between the encapsulation layer and the driving substrate; wherein the near field communication coil is located between the pixel defining layer and the driving substrate on one side of the edge area.

[0007] Optionally, the pixel defining layer has an opening located on one side of the display area; the display substrate further includes: a light-emitting structure located in the opening; a first electrode layer located between the light-emitting structure and the driving substrate; wherein the near-field communication coil is arranged on the same layer as the first electrode layer; or, along a direction perpendicular to the surface of the driving substrate, the distance from the near-field communication coil to the back side of the driving substrate is greater than the distance from the first electrode layer to the back side of the driving substrate.

[0008] Optionally, it further includes: a blocking dam located on one side of the edge area and surrounding the pixel defining layer; wherein the blocking dam includes: a plurality of sub-blocking layers arranged in a direction perpendicular to the surface of the driving substrate, and the material of some layers of the sub-blocking layers is the same as that of the pixel defining layer; the near field communication coil extends to a side surface of the sub-blocking layer, which is made of the same material as the pixel defining layer, facing the driving substrate.

[0009] Optionally, the method further includes: a first flat layer located between the near field communication coil and the driving substrate, wherein the orthographic projection of the first flat layer on the driving substrate is located on the side of the display area.

[0010] Optionally, the thickness of the first planar layer in a direction perpendicular to the surface of the drive substrate is 10 μm to 14 μm.

[0011] Optionally, the encapsulation layer also includes: a second inorganic encapsulation layer, located between the organic encapsulation layer and the drive substrate; wherein the near-field communication coil is located between the first inorganic encapsulation layer on one side of the edge area and the organic encapsulation layer on one side of the edge area; or, the near-field communication coil is located between the organic encapsulation layer on one side of the edge area and the second inorganic encapsulation layer on one side of the edge area.

[0012] Optionally, the driving substrate includes a thin film transistor, a first conductive group and a second conductive group. Along a direction perpendicular to the surface of the driving substrate, the distances between the first conductive group and the second conductive group and the back side of the driving substrate are respectively smaller than the distance between the thin film transistor and the back side of the driving substrate. The second conductive group is connected to the thin film transistor, and the second conductive group is located in the display area and extends to the edge area. The first conductive group is located in the edge area. The display substrate also includes: a connector, one end of which is connected to the first conductive group and the other end is connected to the near field communication coil.

[0013] Optionally, the near field communication coil includes a plurality of turns of coils arranged at intervals; the width of each turn of the coil is 0.2 mm to 1.0 mm; and the spacing distance between adjacent turns of the coil is 0.2 mm to 0.6 mm.

[0014] Optionally, the near field communication coil includes a plurality of turns of coils arranged at intervals; and the thickness of the coil in a direction perpendicular to the surface of the driving substrate is 1 μm to 10 μm.

[0015] Optionally, the distance between the boundary between the display area and the edge area and the outer side wall of the edge area is 1 mm to 2 mm.

[0016] Optionally, the near field communication structure further includes: a shielding layer located on a side of the driving substrate facing away from the near field communication coil.

[0017] The present invention further provides a display module, comprising the display substrate of the present invention.

[0018] Optionally, the edge area includes a binding area; the driving substrate includes a thin film transistor and a first conductive group electrically isolated from the thin film transistor, and along a direction perpendicular to the surface of the driving substrate, the distance from the first conductive group to the back of the driving substrate is less than the distance from the thin film transistor to the back of the driving substrate, and the first conductive group is located in the edge area; the display substrate also includes: a connector, one end of the connector is connected to the first conductive group, and the other end is connected to the near field communication coil; the display module also includes: a flexible circuit board, one end of the flexible circuit board is connected to the binding area; wherein, the first conductive group is also connected to the flexible circuit board through the binding area.

[0019] The present invention further provides a display device, comprising the display module of the present invention.

[0020] The technical solution of the present invention has the following technical effects:

[0021] In the display substrate provided by the technical solution of the present invention, the near-field communication coil is located between the first inorganic packaging layer and the driving substrate on one side of the edge area. Integrating the near-field communication coil into the display substrate can reduce the overall thickness of the display substrate. Secondly, since the overall thickness of the display substrate integrated with the near-field communication coil is reduced and there is no external near-field communication coil, the risk of the near-field communication coil falling off during the bending process of the edge area can be avoided. Thirdly, since the near-field communication coil is located between the first inorganic packaging layer and the driving substrate on one side of the edge area, the influence of the driving circuit in the driving substrate on the near-field communication signal can be reduced, thereby enhancing the signal transmission capability of the near-field communication. In summary, the reliability of the display substrate is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0023] Figure 1 A schematic structural diagram of a display area of ​​a display substrate provided in one embodiment of the present invention;

[0024] Figure 2A schematic structural diagram of an edge region of a display substrate provided by one embodiment of the present invention;

[0025] Figure 3 A flow chart of a method for preparing a display substrate provided in one embodiment of the present invention;

[0026] Figure 4 A schematic structural diagram of a display area of ​​a display module provided in one embodiment of the present invention;

[0027] Reference numerals: driving substrate 100; substrate layer 100a; thin film transistor 100b; display area A1; edge area A2; light emitting structure 110; encapsulation layer 120; organic encapsulation layer 120a; first inorganic encapsulation layer 120b; second inorganic encapsulation layer 120c; near field communication coil 130; shielding layer 140; heat dissipation layer 150; pixel defining layer 160; first electrode layer 170; first planarizing layer 180; second planarizing layer 190; conductive connection 200; second electrode layer 210; barrier dam 220; first barrier dam 220a; First sub-blocking layer 220a-1; second sub-blocking layer 220a-2; third sub-blocking layer 220a-3; fourth sub-blocking layer 220a-4; fifth sub-blocking layer 220a-5; second blocking dam 220b; first sub-blocking layer 220b-1; second sub-blocking layer 220b-2; third sub-blocking layer 220b-3; fourth sub-blocking layer 220b-4; third planarizing layer 230; fourth planarizing layer 240; interlayer dielectric layer 250; passivation layer 260; first metal layer 270; second metal layer 280; touch structure 290. DETAILED DESCRIPTION

[0028] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0029] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0030] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; internal connections between two components; wireless connections or wired connections. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0031] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0032] An embodiment of the present invention provides a display substrate, referring to Figure 1 and Figure 2 , including: a driving substrate 100, the driving substrate 100 includes a display area A1 and an edge area A2 surrounding the display area; an encapsulation layer 120, located on one side of the display area A1 and extending to a side of part of the edge area A2; the encapsulation layer 120 includes an organic encapsulation layer 120a and a first inorganic encapsulation layer 120b located on a side of the organic encapsulation layer 120a away from the driving substrate 100; a near field communication structure, including: a near field communication coil 130, located between the first inorganic encapsulation layer 120b on one side of the edge area A2 and the driving substrate 100.

[0033] In this embodiment, the near-field communication coil 130 is located between the first inorganic encapsulation layer 120b on one side of the edge area A2 and the drive substrate 100. Integrating the near-field communication coil 130 into the display substrate can reduce the overall thickness of the display substrate. Secondly, since the overall thickness of the display substrate with the integrated near-field communication coil 130 is reduced and there is no external near-field communication coil 130, the risk of the near-field communication coil 130 falling off during the bending process of the edge area A2 can be avoided. Thirdly, since the near-field communication coil 130 is located between the first inorganic encapsulation layer 120b on one side of the edge area A2 and the drive substrate 100, the influence of the drive circuit in the drive substrate 100 on the near-field communication signal can be reduced, thereby enhancing the signal transmission capability of the near-field communication. In summary, the reliability of the display substrate is improved.

[0034] In one embodiment, the NFC coil 130 includes multiple turns of coils spaced apart. In other embodiments, the NFC coil includes one turn of coil. The number of turns of the NFC coil is set according to actual needs and is not specifically limited here.

[0035] In one embodiment, the width of each coil turn is 0.2mm to 1.0mm, for example, 0.2mm, 0.4mm, 0.6mm, 0.8mm or 1.0mm. If the width of each coil turn is less than 0.2mm, the near-field communication signal is easily affected by external interference, affecting the radiation efficiency of the near-field communication coil 130 and the quality of the near-field communication signal, and the effect of enhancing the signal transmission capability of the near-field communication is weakened; if the width of each coil turn is greater than 1.0mm, the manufacturing cost of the near-field communication coil 130 increases, and the overall size of the display substrate becomes larger. In summary, the width of each coil turn is 0.2mm to 1.0mm, which can better meet the requirements of high signal transmission capability of near-field communication, low manufacturing cost of the near-field communication coil 130 and small overall size of the display substrate. It should be noted that in other embodiments, the width of the coil is not limited to this.

[0036] In one embodiment, the spacing distance between adjacent coil turns is 0.2mm to 0.6mm, for example, 0.2mm, 0.3mm, 0.4mm, 0.5mm or 0.6mm. If the spacing distance between adjacent coil turns is less than 0.2mm, short circuits are likely to occur between adjacent coil turns; if the spacing distance between adjacent coil turns is greater than 0.6mm, the magnetic field coupling between adjacent coil turns is weakened, and the effect of enhancing the signal transmission capability of near-field communication is weakened. In summary, the spacing distance between adjacent coil turns is 0.2mm to 0.6mm, which can better take into account the requirements of high signal transmission capability of near-field communication and good insulation performance between adjacent coil turns. It should be noted that, in other embodiments, the spacing distance between adjacent coil turns is not limited to this.

[0037] In one embodiment, the thickness of the coil in the direction perpendicular to the surface of the drive substrate 100 is 1 μm to 10 μm, for example, 1 μm, 2 μm, 4 μm, 6 μm, 8 μm or 10 μm. If the thickness of the coil in the direction perpendicular to the surface of the drive substrate 100 is less than 1 μm, the magnetic induction intensity of the coil is weakened, and the effect of enhancing the signal transmission capability of near-field communication is weakened; if the thickness of the coil in the direction perpendicular to the surface of the drive substrate 100 is greater than 10 μm, the manufacturing cost of the near-field communication coil 130 is high, and the overall size of the display substrate becomes larger. In summary, the thickness of the coil in the direction perpendicular to the surface of the drive substrate 100 is 1 μm to 10 μm, which can better take into account the requirements of high signal transmission capability of near-field communication, low manufacturing cost of the near-field communication coil 130 and small overall size of the display substrate. It should be noted that in other embodiments, the thickness of the coil in the direction perpendicular to the surface of the drive substrate is not limited to this.

[0038] It should be noted that each coil turn can be circular or square, and the width of each coil turn can be defined based on the actual coil shape. When each coil turn is circular, the coil width is parallel to the radial direction of the NFC coil 130 and parallel to the surface of the drive substrate 100 facing the NFC coil 130. When each coil turn is square, the coil width is parallel to the surface of the drive substrate 100 facing the NFC coil 130.

[0039] In one embodiment, the distance between the boundary between the display area A1 and the edge area A2 and the outer wall of the edge area A2 is 1mm to 2mm, for example, 1mm, 1.5mm or 2mm. If the distance between the boundary between the display area A1 and the edge area A2 and the outer wall of the edge area A2 is less than 1mm, the space for the near-field communication coil 130 to be set on one side of the edge area A2 is reduced, which to a certain extent limits the optional size of the near-field communication coil 130 and affects the signal transmission capability of the near-field communication. When the size of the near-field communication coil 130 needs to be designed larger, the near-field communication coil 130 will occupy part of the position of the display area A1, which is prone to mold imprinting. If the distance between the boundary between the display area A1 and the edge area A2 and the outer wall of the edge area A2 is greater than 2mm, the area of ​​the display area A1 is relatively reduced, affecting the display effect. In summary, the distance between the boundary between the display area A1 and the edge area A2 and the outer wall of the edge area A2 is 1mm to 2mm, which can better balance the requirements of high signal transmission capability of near-field communication and good display effect. It should be noted that, in other embodiments, the distance between the boundary between the display area and the edge area and the outer sidewall of the edge area is not limited thereto.

[0040] In one embodiment, reference Figure 2 The NFC structure also includes a shielding layer 140 located on the side of the driver substrate 100 facing away from the NFC coil 130. Shielding layer 140 reduces interference from external electromagnetic radiation on NFC signals, improving the stability of NFC signals during transmission, and provides support and physical protection for the driver substrate 100.

[0041] In this embodiment, the shielding layer 140 is located on the side of the edge area A2 of the driving substrate 100 facing away from the near-field communication coil 130; in other embodiments, the shielding layer is located on the side of the edge area of ​​the driving substrate facing away from the near-field communication coil and on the side of the display area of ​​the driving substrate facing away from the near-field communication coil.

[0042] In one embodiment, the shielding layer 140 is made of a wave-absorbing material, for example, the shielding layer 140 is made of ferrite. In other embodiments, the shielding layer is made of other wave-absorbing materials.

[0043] In one embodiment, the near-field communication coil 130 may have a stacked structure, comprising a first sub-near-field communication coil, a second sub-near-field communication coil located on the side of the first sub-near-field communication coil facing away from the driver substrate 100, and a third sub-near-field communication coil located on the side of the second sub-near-field communication coil facing away from the driver substrate 100. The first sub-near-field communication coil may be made of indium tin oxide, the second sub-near-field communication coil may be made of silver, and the third sub-near-field communication coil may be made of indium tin oxide. In other embodiments, the near-field communication coil may have a single-layer structure or other stacked structures, and the materials of the near-field communication coil may include other metal materials.

[0044] In one embodiment, reference Figure 2 The display substrate further includes a heat dissipation layer 150 located on a side of the shielding layer 140 away from the driving substrate 100. The heat dissipation layer 150 can dissipate the heat generated during the operation of the display substrate in a timely manner.

[0045] In one embodiment, the heat dissipation layer 150 is made of copper foil.

[0046] In one embodiment, reference Figure 1 and Figure 2 The display substrate further includes a pixel-defining layer 160 located between the encapsulation layer 120 and the drive substrate 100. The pixel-defining layer 160 is located on one side of the display area A1 and extends to a portion of the edge area A2. The pixel-defining layer 160 has an opening located on one side of the display area A1; and a light-emitting structure 110 located in the opening. The near-field communication coil 130 is located between the pixel-defining layer 160 and the drive substrate 100 on the side of the edge area A2. The pixel-defining layer 160 provides a certain degree of isolation between adjacent coil turns by filling the gaps between them. In one embodiment, the thickness of the pixel-defining layer 160 is greater than that of the near-field communication coil 130, resulting in a relatively flat surface on the side of the pixel-defining layer 160 facing away from the drive substrate 100. The thickness directions of the pixel-defining layer 160 and the near-field communication coil 130 are both perpendicular to the surface of the drive substrate 100.

[0047] In one embodiment, specifically, the pixel defining layer 160 is located between the organic encapsulation layer 120a and the driving substrate 100. The encapsulation layer 120 also covers the light emitting structure 110.

[0048] In one embodiment, the material of the pixel defining layer 160 includes polyimide.

[0049] In one embodiment, reference Figure 1The display substrate further includes a first electrode layer 170 located between the light emitting structure 110 and the driving substrate 100 . The pixel defining layer 160 may also cover a portion of the first electrode layer 170 .

[0050] In one embodiment, the near field communication coil 130 is disposed in the same layer as the first electrode layer 170. This helps to reduce the overall thickness of the display substrate.

[0051] In another embodiment, reference Figure 2 , along a direction perpendicular to the surface of the drive substrate 100, the distance from the NFC coil 130 to the back side of the drive substrate 100 is greater than the distance from the first electrode layer 170 to the back side of the drive substrate 100. Accordingly, the display substrate further includes a first planar layer 180, which is located between the NFC coil 130 and the drive substrate 100. The orthographic projection of the first planar layer 180 on the drive substrate 100 is located to the side of the display area A1. The first planar layer 180 can be used to electrically isolate the NFC coil 130 from the drive substrate 100.

[0052] In one embodiment, the material of the first planar layer 180 includes polyimide. In other embodiments, the material of the first planar layer includes other insulating materials.

[0053] In one embodiment, the thickness of the first flat layer 180 in a direction perpendicular to the surface of the drive substrate 100 is 10 μm to 14 μm, for example, 10 μm, 11 μm, 12 μm, 13 μm, or 14 μm. If the thickness of the first flat layer 180 in a direction perpendicular to the surface of the drive substrate 100 is less than 10 μm, the first flat layer 180 is less effective in electrically isolating the near-field communication coil 130 from the drive substrate 100. If the thickness of the first flat layer 180 in a direction perpendicular to the surface of the drive substrate 100 is greater than 14 μm, the manufacturing cost increases and the overall size of the display substrate increases. In summary, the thickness of the first flat layer 180 in a direction perpendicular to the surface of the drive substrate 100 is 10 μm to 14 μm, which can effectively balance the requirements of electrical isolation between the near-field communication coil 130 and the drive substrate 100, low manufacturing cost, and small overall size of the display substrate. It should be noted that in other embodiments, the thickness of the first flat layer in a direction perpendicular to the surface of the drive substrate is not limited to this.

[0054] In this embodiment, the first electrode layer 170 is an anode layer. The first electrode layer 170 has the same structure as the near-field communication coil 130 . The first electrode layer 170 can be a stacked structure, comprising a first sub-electrode layer, a second sub-electrode layer located on the side of the first sub-electrode layer facing away from the drive substrate 100 , and a third sub-electrode layer located on the side of the second sub-electrode layer facing away from the drive substrate 100 . The first sub-electrode layer can be made of indium tin oxide, the second sub-electrode layer can be made of silver, and the third sub-electrode layer can be made of indium tin oxide. When the near-field communication coil 130 and the first electrode layer 170 are provided in the same layer, the first electrode layer 170 and the near-field communication coil 130 can be manufactured simultaneously using the same process, simplifying the manufacturing process.

[0055] In other embodiments, the first electrode layer and the near-field communication coil have different structures and are made of different materials. The first electrode layer may have a single-layer structure or other stacked structures, and the material of the first electrode layer may include other metal materials.

[0056] In one embodiment, reference Figure 1 and Figure 2 The driving substrate 100 includes a substrate layer 100a and a thin film transistor 100b, a first conductive group, and a second conductive group located on the side of the substrate layer 100a facing the light-emitting structure 110. In a direction perpendicular to the surface of the driving substrate 100, the distances between the first conductive group and the second conductive group and the back surface of the driving substrate 100 are both shorter than the distance between the thin film transistor 100b and the back surface of the driving substrate 100. The second conductive group is connected to the thin film transistor 100b, and the second conductive group is located in the display area A1 and extends to the edge area A2. The first conductive group is located in the edge area A2. The display substrate also includes: a connector, one end of the connector is connected to the first conductive group and the other end is connected to the near field communication coil 130. The edge area A2 includes a binding area 290. The first conductive group and the second conductive group are used to connect to the flexible circuit board through the binding area 290.

[0057] In one embodiment, reference Figure 1 and Figure 2 The drive substrate 100 further includes a second planar layer 190 located between the first electrode layer 170 and the thin film transistor 100 b and between the near field communication coil 130 and the substrate layer 100 a. When the display substrate further includes the first planar layer 180, the second planar layer 190 on one side of the edge region A2 is located between the first planar layer 180 and the drive substrate 100.

[0058] In one embodiment, reference Figure 2The driving substrate 100 further includes: a third flat layer 230 and a fourth flat layer 240, the fourth flat layer 240 is located between the second flat layer 190 and the substrate layer 100a on one side of the edge area A2, and the third flat layer 230 is located between the fourth flat layer 240 and the substrate layer 100a on one side of the edge area A2.

[0059] In one embodiment, reference Figure 1 and Figure 2 The driving substrate 100 further includes: an interlayer dielectric layer 250, located between the substrate layer 100a and the third flat layer 230 on one side of the edge area A2, and between the thin film transistor 100b and the second flat layer 190; a passivation layer 260, located between the interlayer dielectric layer 250 on one side of the edge area A2 and the third flat layer 230 on one side of the edge area A2; a first metal layer 270, located on the side of the interlayer dielectric layer 250 on the side of the edge area A2 facing away from the substrate layer 100a, the passivation layer 260 on the side of the edge area A2 covering a portion of the interlayer dielectric layer 250; a second metal layer 280, located between the third flat layer 230 on one side of the edge area A2 and the fourth flat layer 240 on one side of the edge area A2, a portion of the second metal layer 280 extending in the third flat layer 230 to the surface of the first metal layer 270 facing away from the substrate layer 100a and connected to the first metal layer 270.

[0060] In one embodiment, a portion of the first metal layer 270 is connected to a ground signal, and a portion of the first metal layer 270 is connected to a power voltage signal.

[0061] In one embodiment, reference Figure 1 The driving substrate 100 further includes a conductive connecting member 200 located in the second planar layer 190 and the interlayer dielectric layer 250 , wherein one end of the conductive connecting member 200 is connected to the thin film transistor 100 b and the other end is connected to the first electrode layer 170 .

[0062] In one embodiment, reference Figure 1 and Figure 2 The encapsulation layer 120 further includes: a second inorganic encapsulation layer 120 c located between the organic encapsulation layer 120 a and the driving substrate 100 .

[0063] In one embodiment, the pixel defining layer 160 is located between the second inorganic encapsulation layer 120 c and the driving substrate 100 .

[0064] In one embodiment, reference Figure 1 The display substrate further includes a second electrode layer 210 located between the light emitting structure 110 and the encapsulation layer 120 and between the pixel defining layer 160 and the encapsulation layer 120 on one side of the display area A1. In this embodiment, the second electrode layer 210 is a cathode layer.

[0065] In one embodiment, the second electrode layer 210 is located between the light emitting structure 110 and the second inorganic encapsulation layer 120 c and between the pixel defining layer 160 and the second inorganic encapsulation layer 120 c on one side of the display area A1 .

[0066] refer to Figure 2 The second electrode layer 210 also extends to between the pixel defining layer 160 and the encapsulation layer 120 on the edge region A2 side. Specifically, the second electrode layer 210 also extends to between the pixel defining layer 160 and the second inorganic encapsulation layer 120c on the edge region A2 side.

[0067] In one embodiment, the display substrate further includes a support column (not shown) located between the pixel defining layer 160 and the second electrode layer 210. The support column is used to support the evaporation mask used in the process of forming the light emitting structure 110.

[0068] In one embodiment, reference Figure 2 The display substrate further includes a barrier dam 220 located on one side of the edge region A2 and surrounding the pixel defining layer 160. The barrier dam 220 is used to block the flow of the organic encapsulation layer 120a during the formation of the organic encapsulation layer 120a, preventing the material of the organic encapsulation layer 120a on the edge region A2 from overflowing to the side of the barrier dam 220 away from the display region A1, thereby reducing the probability of encapsulation failure.

[0069] In one embodiment, the barrier dam 220 comprises multiple sub-barrier layers arranged perpendicular to the surface of the drive substrate 100, with some layers made of the same material as the pixel-defining layer 160. The NFC coil 130 extends to the side of the sub-barrier layer made of the same material as the pixel-defining layer 160 that faces the drive substrate 100. This increases the space available for the NFC coil 130, improving space utilization on the display substrate and further enhancing NFC signal transmission capabilities. The barrier dam can be one or more in number. Figure 2The number of barrier dams 220 is shown as multiple for illustrative purposes. The multiple barrier dams 220 include a first barrier dam 220a and a second barrier dam 220b located between the pixel-defining layer 160 and the first barrier dam 220a. The first barrier dam 220a includes multiple sub-blocking layers arranged perpendicular to the surface of the drive substrate 100, with some layers made of the same material as the pixel-defining layer 160. The second barrier dam 220b includes multiple sub-blocking layers arranged perpendicular to the surface of the drive substrate 100, with some layers made of the same material as the pixel-defining layer 160. In one embodiment, the near field communication coil 130 extends to the side surface of the driving substrate 100 where the sub-blocking layer of the second blocking dam 220b is made of the same material as the pixel defining layer 160, or the near field communication coil 130 extends to the side surface of the driving substrate 100 where the sub-blocking layer of the second blocking dam 220b is made of the same material as the pixel defining layer 160 and the side surface of the driving substrate 100 where the sub-blocking layer of the first blocking dam 220a is made of the same material as the pixel defining layer 160.

[0070] In other embodiments, the near field communication coil does not extend to the surface of the sub-blocking layer made of the same material as the pixel defining layer and facing the driving substrate.

[0071] refer to Figure 2 The first barrier dam 220a includes a first sub-barrier layer 220a-1, a second sub-barrier layer 220a-2, a third sub-barrier layer 220a-3, a fourth sub-barrier layer 220a-4, and a fifth sub-barrier layer 220a-5 stacked in sequence. The first sub-barrier layer 220a-1 is located on one side of the edge area A1 and surrounds the pixel defining layer 160. The second sub-barrier layer 220a-2 is located on the side of the first sub-barrier layer 220a-1 facing away from the drive substrate 100. The third sub-barrier layer 220a-3 is located on the side of the second sub-barrier layer 220a-2 facing away from the drive substrate 100. The fourth sub-barrier layer 220a-4 is located on the side of the third sub-barrier layer 220a-3 facing away from the drive substrate 100. The fifth sub-barrier layer 220a-5 is located on the side of the fourth sub-barrier layer 220a-4 facing away from the drive substrate 100. The first sub-blocking layer 220a-1 is made of the same material as the third flat layer 230, the second sub-blocking layer 220a-2 is made of the same material as the fourth flat layer 240, the third sub-blocking layer 220a-3 is made of the same material as the pixel defining layer 160, the fourth sub-blocking layer 220a-4 is made of the same material as the second inorganic encapsulation layer 120c, and the fifth sub-blocking layer 220a-5 is made of the same material as the first inorganic encapsulation layer 120b.

[0072] Continue to refer Figure 2The second barrier dam 220b includes a first sub-barrier layer 220b-1, a second sub-barrier layer 220b-2, a third sub-barrier layer 220b-3, and a fourth sub-barrier layer 220b-4 stacked in sequence. The first sub-barrier layer 220a-1 is located on one side of the edge area A1, surrounds the pixel defining layer 160, and is located between the pixel defining layer 160 and the first barrier dam 220a. The second sub-barrier layer 220b-2 is located on the side of the first sub-barrier layer 220b-1 facing away from the drive substrate 100. The third sub-barrier layer 220b-3 is located on the side of the second sub-barrier layer 220b-2 facing away from the drive substrate 100. The fourth sub-barrier layer 220b-4 is located on the side of the third sub-barrier layer 220b-3 facing away from the drive substrate 100. The first sub-blocking layer 220b-1 is made of the same material as the fourth planar layer 240, the second sub-blocking layer 220b-2 is made of the same material as the pixel defining layer 160, the third sub-blocking layer 220b-3 is made of the same material as the second inorganic encapsulation layer 120c, and the fourth sub-blocking layer 220b-4 is made of the same material as the first inorganic encapsulation layer 120b.

[0073] In one embodiment, the substrate layer 100a includes a flexible substrate layer or a hard substrate layer. In this embodiment, the substrate layer 100a includes a flexible substrate layer.

[0074] In one embodiment, the display substrate is an active-matrix light-emitting diode (AMOLED) display substrate. Because support columns are provided between the pixel-defining layer 160 and the second electrode layer 210, the AMOLED display substrate can support the evaporation mask used during the formation of the light-emitting structure 110, thereby improving the evaporation effect of the light-emitting structure 110. Furthermore, the relatively large width of the edge region A2 of the AMOLED display substrate provides ample space for the near-field communication coil 130, allowing for more flexible configuration of the near-field communication coil 130's size.

[0075] In other embodiments, the display substrate is a liquid crystal display substrate.

[0076] Another embodiment of the present invention further provides a display substrate, which differs from the aforementioned embodiment in that: the near-field communication coil 130 is located between the first inorganic encapsulation layer 120b on one side of the edge area A2 and the organic encapsulation layer 120a on one side of the edge area A2; or, the near-field communication coil 130 is located between the organic encapsulation layer 120a on one side of the edge area A2 and the second inorganic encapsulation layer 120c on one side of the edge area A2.

[0077] Another embodiment of the present invention provides a method for preparing a display substrate, referring to Figure 3 ,include:

[0078] S1: forming a driving substrate, the driving substrate comprising a display area and an edge area surrounding the display area;

[0079] S2: forming an encapsulation layer on one side of the display area and on one side of a portion of the edge area; the step of forming the encapsulation layer comprises: forming an organic encapsulation layer on one side of the display area and on one side of the portion of the edge area; and forming a first inorganic encapsulation layer on a side of the organic encapsulation layer away from the drive substrate;

[0080] S3: Before forming the first inorganic encapsulation layer, forming a near field communication structure, including: forming a near field communication coil on one side of the edge area of ​​the driving substrate.

[0081] In one embodiment, forming the near field communication structure further includes: forming a shielding layer 140 on a side of the driving substrate 100 facing away from the near field communication coil 130 .

[0082] In one embodiment, the method for preparing the display substrate further includes: forming a heat dissipation layer 150 on a side of the shielding layer 140 facing away from the driving substrate 100 .

[0083] For the description of the parameters, shape, and materials of the near field communication coil 130, refer to the description of the aforementioned embodiment. For the description of the materials of the shielding layer 140, refer to the description of the aforementioned embodiment. For the description of the materials of the shielding layer, refer to the description of the aforementioned embodiment. For the description of the materials of the heat dissipation layer 150, refer to the description of the aforementioned embodiment.

[0084] In one embodiment, the method for preparing a display substrate further includes: before forming the encapsulation layer 120, forming a pixel defining layer 160 on one side of the display area A1 and on one side of a portion of the edge area A2; forming an opening in the pixel defining layer 160 on one side of the display area A1; forming a light emitting structure 110 in the opening; wherein, before forming the pixel defining layer 160, forming a near field communication coil 130.

[0085] In one embodiment, the method for preparing a display substrate further includes: before forming the light emitting structure 110 in the opening, forming a support column on a side of the pixel defining layer 160 facing away from the driving substrate.

[0086] Regarding the material of the pixel defining layer 160 , reference is made to the description of the previous embodiment.

[0087] In one embodiment, the method for preparing a display substrate further includes: before forming the pixel defining layer 160 , forming a first electrode layer 170 on one side of a portion of the display area A1 .

[0088] In this embodiment, the NFC coil 130 and the first electrode layer 170 are provided on the same layer. The first electrode layer 170 and the NFC coil 130 are made of the same material and can be manufactured simultaneously or in different steps.

[0089] For the description of the material of the first electrode layer 170 , reference is made to the description of the previous embodiment.

[0090] In another embodiment, after forming the first electrode layer 170, the near-field communication coil 130 is formed. The method for manufacturing the display substrate further includes: forming a first planar layer 180 on one side of the edge area A2, with the orthographic projection of the first planar layer 180 on the drive substrate 100 being located to the side of the display area A1; and forming the near-field communication coil 130 includes: forming the near-field communication coil 130 on the side of the first planar layer 180 facing away from the drive substrate 100. The distance between the near-field communication coil 130 and the back surface of the drive substrate 100 is greater than the distance between the first electrode layer 180 and the back surface of the drive substrate 100.

[0091] For the description of the material of the first planar layer 180 , reference is made to the description of the previous embodiment.

[0092] In one embodiment, the step of forming the encapsulation layer 120 further includes: before forming the organic encapsulation layer 120 a ; forming a second inorganic encapsulation layer 120 c on a side of the light emitting structure 110 and the pixel defining layer 160 away from the driving substrate 100 .

[0093] The method for preparing the display substrate further includes forming a second electrode layer 210 on the side of the pixel defining layer 160 on the side of the light emitting structure 110 and the display area A1 facing away from the drive substrate 100 before forming the encapsulation layer 120. In one embodiment, the second electrode layer 210 also extends to the side of the pixel defining layer 160 on the side of the edge area A2 facing away from the drive substrate 100. For the description of the second electrode layer 210, refer to the description of the previous embodiment.

[0094] In one embodiment, the method for preparing a display substrate further includes forming a barrier dam 220 surrounding the pixel defining layer 160 on one side of the edge region A2. The barrier dam 220 includes multiple sub-barrier layers arranged in a direction perpendicular to the surface of the drive substrate 100.

[0095] In one embodiment, the step of forming the barrier dam 220 includes forming a first barrier dam 220a and forming a second barrier dam 220b between the pixel defining layer 160 and the first barrier dam 220a. The first barrier dam 220a includes multiple sub-barrier layers arranged in a direction perpendicular to the surface of the drive substrate 100, and the second barrier dam 220b includes multiple sub-barrier layers arranged in a direction perpendicular to the surface of the drive substrate 100.

[0096] For the structural description and material description of the first and second barrier dams 220 a and 220 b , reference is made to the description of the aforementioned embodiment.

[0097] In one embodiment, the near field communication coil 130 extends to the side surface of the driving substrate 100 where the sub-blocking layer of the second blocking dam 220b is made of the same material as the pixel defining layer 160, or the near field communication coil 130 extends to the side surface of the driving substrate 100 where the sub-blocking layer of the second blocking dam 220b is made of the same material as the pixel defining layer 160 and the side surface of the driving substrate 100 where the sub-blocking layer of the first blocking dam 220a is made of the same material as the pixel defining layer 160.

[0098] In other embodiments, the near field communication coil does not extend to the surface of the sub-blocking layer made of the same material as the pixel defining layer and facing the driving substrate.

[0099] In one embodiment, the steps of forming the driving substrate include: forming a thin film transistor 100b on one side of the display area A1 of the substrate layer 100a; forming an interlayer dielectric layer 250 on the side of the thin film transistor 100b facing away from the substrate layer 100a, and the interlayer dielectric layer 250 extends to the side of the edge area A2 of the substrate layer 100a; and forming a second planarization layer 190 on the side of the interlayer dielectric layer 250 facing away from the substrate layer 100a.

[0100] In one embodiment, the step of forming the driving substrate further includes: before forming the second flat layer 190 on the side of the interlayer dielectric layer on the side of the edge area A2 facing away from the substrate layer 100a, forming a third flat layer 230 on the side of the interlayer dielectric layer 250 on the side of the edge area A2 facing away from the substrate layer 100a; and forming a fourth flat layer 240 on the side of the third flat layer 230 facing away from the substrate layer 100a.

[0101] In one embodiment, the step of forming the driving substrate further includes: before forming the third flat layer 230, forming a first metal layer 270 on the side of the interlayer dielectric layer 250 on one side of the edge area A2 facing away from the substrate layer 100a; forming a passivation layer 260 on the side of a portion of the first metal layer 270 facing away from the substrate layer 100a, and the passivation layer 260 covers a portion of the interlayer dielectric layer 250.

[0102] In one embodiment, the step of forming the driving substrate further includes: after forming the third flat layer 230 and before forming the fourth flat layer 240 on the side of the third flat layer 230 facing away from the substrate layer 100a, forming a second metal layer 280 on the side of the third flat layer 230 facing away from the substrate layer 100a.

[0103] In one embodiment, after forming the second planar layer 190, a conductive connecting member 200 is formed in the second planar layer 190 and the interlayer dielectric layer 250 on one side of the display area A1, wherein one end of the conductive connecting member 200 is connected to the thin film transistor 100b and the other end is connected to the first electrode layer 170;

[0104] In other embodiments, a conductive connector is formed during the formation of the first electrode layer, and the first electrode layer and the conductive connector are an integrated structure. Another embodiment of the present invention also provides a method for preparing a display substrate, which differs from the aforementioned embodiment in that the step of forming a near-field communication coil 130 on one side of the edge area A2 includes: before forming the organic encapsulation layer 120a, forming the near-field communication coil 130 on the side of the second inorganic encapsulation layer 120c on the side of the edge area A2 facing away from the drive substrate 100; or before forming the first inorganic encapsulation layer 120b, forming the near-field communication coil 130 on the side of the organic encapsulation layer 120a on the side of the edge area A2 facing away from the drive substrate 100.

[0105] Another embodiment of the present invention provides a display module, comprising the display substrate of the above embodiment, wherein the display substrate comprises a driving substrate 100 , and the driving substrate 100 comprises a display area A1 and an edge area A2 surrounding the display area A1 .

[0106] In one embodiment, reference Figure 2 , the edge area A2 includes a binding area 290; the driving substrate 100 includes a thin film transistor 100b and a first conductive group electrically isolated from the thin film transistor 100b, along a direction perpendicular to the surface of the driving substrate 100, the distance from the first conductive group to the back side of the driving substrate 100 is less than the distance from the thin film transistor 100b to the back side of the driving substrate 100, and the first conductive group is located in the edge area A2; the display substrate also includes: a connector, one end of the connector is connected to the first conductive group, and the other end is connected to the near field communication coil 130.

[0107] In one embodiment, the display module further includes a flexible circuit board (not shown), one end of which is connected to the binding area 290 ; wherein the first conductive group is also connected to the flexible circuit board through the binding area 290 .

[0108] In one embodiment, reference Figure 4 The display module further includes: a touch structure 300 , and a side of the encapsulation layer 120 located on one side of the display area AA away from the driving substrate 100 .

[0109] Test Example 1

[0110] The display module of Test Example 1 includes the display substrate of the aforementioned embodiment. Specifically, the near-field communication coil 130 includes two turns spaced apart; each turn is 0.4 mm wide; and the spacing between adjacent turns is 0.2 mm. The first planar layer 180 has a thickness of 12 μm perpendicular to the surface of the drive substrate 100.

[0111] The rest of the contents of this embodiment are the same as those of the previous embodiment, and the contents that are the same as those of the previous embodiment will not be described in detail.

[0112] Test Example 2

[0113] The difference between Test Example 2 and Test Example 1 is that the width of each coil turn is 1.0 mm and the spacing between adjacent coil turns is 0.3 mm. The other contents of this embodiment are the same as those of the previous embodiment, and the contents that are the same as those of the previous embodiment will not be described in detail.

[0114] Comparative Example 1

[0115] The difference between Comparative Example 1 and Test Example 1 is that the display substrate includes: a driving substrate; a light-emitting structure located on one side of the driving substrate; and a near-field communication structure including: a near-field communication coil located on the side of the driving substrate away from the light-emitting structure.

[0116] Comparative Example 2

[0117] The difference between Comparative Example 2 and Test Example 2 is that the display substrate includes: a driving substrate; a light-emitting structure located on one side of the driving substrate; and a near-field communication structure including: a near-field communication coil located on the side of the driving substrate away from the light-emitting structure.

[0118] The display modules provided in Test Example 1, Test Example 2, and Comparative Examples 1 and 2 were simulated for near-field communication signals to obtain the maximum magnetic field strength around the near-field communication coil when the display module was in operation and the equivalent inductance corresponding to the near-field communication coil of the display module at a frequency of 1 MHz, as shown in Table 1 below:

[0119] Table 1

[0120]

[0121] According to the data comparison between test example 1 and comparative example 1, and the data comparison between test example 2 and comparative example 2, it can be known that: when the display module provided in the present application is in a working state, the magnetic field strength around the near-field communication coil is greater, and the transmission distance of the near-field communication signal is longer; when the transmission distance of the near-field communication signal in the present application is the same as the transmission distance of the near-field communication signal in the comparative example, the power consumption of the near-field communication coil in the display module provided in the present application is lower; the equivalent inductance corresponding to the near-field communication coil of the display module provided in the present application at a frequency of 1 MHz is greater than the equivalent inductance corresponding to the near-field communication coil of the display module in the comparative example at a frequency of 1 MHz, indicating that the metal conductive layer in the display substrate of the present application has little effect on the near-field communication signal, and the signal transmission capability of the near-field communication is high.

[0122] In addition, the present application integrates the near-field communication coil into the display substrate, which increases the sensitivity of the resonant frequency and resonant resistance to changes in the capacitance of the near-field communication coil matching circuit, and reduces the difficulty of passive debugging of the near-field communication coil.

[0123] Another embodiment of the present invention further provides a display device, comprising the display module of the above embodiment.

[0124] A display device is, for example, a display panel, a display module, various types of displays, an in-vehicle display terminal, a mobile phone, a tablet computer, a laptop computer, or any other product or component having a display function. Other essential components of the display device are well understood by those skilled in the art and are not described in detail herein and should not be construed as limiting the present invention.

[0125] Obviously, the above embodiments are merely examples for clarity of explanation and are not intended to limit the implementation methods. Those skilled in the art will readily appreciate that other variations or modifications based on the above descriptions are possible. It is not necessary and impossible to enumerate all implementation methods here. Obvious variations or modifications arising therefrom remain within the scope of protection of the present invention.

Claims

1. A display substrate, characterized in that: include: A driving substrate, the driving substrate comprising a display area and an edge area surrounding the display area; an encapsulation layer, located at one side of the display area and extending to a side of part of the edge area; the encapsulation layer comprises an organic encapsulation layer and a first inorganic encapsulation layer located at a side of the organic encapsulation layer away from the drive substrate; The near field communication structure comprises: a near field communication coil located between the first inorganic packaging layer and the driving substrate on one side of the edge area.

2. The display substrate according to claim 1, characterized in that: Also includes: A pixel defining layer, located between the encapsulation layer and the driving substrate; Wherein, the near field communication coil is located between the pixel defining layer and the driving substrate on one side of the edge area.

3. The display substrate according to claim 2, characterized in that: The pixel defining layer has an opening located at one side of the display area; The display substrate further includes: a light emitting structure located in the opening; a first electrode layer located between the light emitting structure and the driving substrate; The near field communication coil is arranged on the same layer as the first electrode layer; or, along a direction perpendicular to the surface of the drive substrate, a distance from the near field communication coil to the back side of the drive substrate is greater than a distance from the first electrode layer to the back side of the drive substrate.

4. The display substrate according to claim 2 or 3, characterized in that: Also includes: a blocking dam, located at one side of the edge region and surrounding the pixel defining layer; The blocking dam comprises: a plurality of sub-blocking layers arranged in a direction perpendicular to the surface of the driving substrate, and the material of some layers of the sub-blocking layers is the same as the material of the pixel defining layer; the near field communication coil extends to a side surface of the sub-blocking layer which is the same as the material of the pixel defining layer and faces the driving substrate.

5. The display substrate according to claim 2, characterized in that: Also includes: The first flat layer is located between the near field communication coil and the driving substrate, and the orthographic projection of the first flat layer on the driving substrate is located at a side of the display area.

6. The display substrate according to claim 5, characterized in that: The thickness of the first planar layer in a direction perpendicular to the surface of the drive substrate is 10 μm to 14 μm.

7. The display substrate according to claim 1, characterized in that: The encapsulation layer further includes: a second inorganic encapsulation layer, located between the organic encapsulation layer and the driving substrate; The near field communication coil is located between the first inorganic encapsulation layer on one side of the edge area and the organic encapsulation layer on one side of the edge area; or, the near field communication coil is located between the organic encapsulation layer on one side of the edge area and the second inorganic encapsulation layer on one side of the edge area.

8. The display substrate according to claim 1, characterized in that: The driving substrate comprises a thin film transistor, a first conductive group and a second conductive group. In a direction perpendicular to the surface of the driving substrate, the distances from the first conductive group and the second conductive group to the back side of the driving substrate are both smaller than the distance from the thin film transistor to the back side of the driving substrate. The second conductive group is connected to the thin film transistor, the second conductive group is located in the display area and extends to the edge area, and the first conductive group is located in the edge area. The display substrate further includes a connecting member, one end of which is connected to the first conductive group, and the other end of which is connected to the near field communication coil.

9. The display substrate according to claim 1, characterized in that: The near field communication coil comprises a plurality of turns of coils arranged at intervals; the width of each turn of the coil is 0.2 mm to 1.0 mm; and the interval distance between adjacent turns of the coil is 0.2 mm to 0.6 mm.

10. The display substrate according to claim 1, characterized in that: The near field communication coil comprises a plurality of turns of coils arranged at intervals; the thickness of the coil in a direction perpendicular to the surface of the driving substrate is 1 μm to 10 μm.

11. The display substrate according to claim 1, characterized in that: The distance between the junction of the display area and the edge area and the outer side wall of the edge area is 1 mm to 2 mm.

12. The display substrate according to claim 1, characterized in that: The near field communication structure further includes: a shielding layer located on a side of the driving substrate away from the near field communication coil.

13. A display module, characterized in that: A display substrate comprising any one of claims 1 to 12.

14. The display module according to claim 13, characterized in that: The edge region includes a binding region; the driving substrate includes a thin film transistor and a first conductive group electrically isolated from the thin film transistor, along a direction perpendicular to a surface of the driving substrate, a distance from the first conductive group to the back side of the driving substrate is smaller than a distance from the thin film transistor to the back side of the driving substrate, and the first conductive group is located in the edge region; The display substrate further includes: a connecting member, one end of which is connected to the first conductive group, and the other end of which is connected to the near field communication coil; The display module further includes: a flexible circuit board, one end of which is connected to the binding area; Wherein, the first conductive group is also connected to the flexible circuit board through the binding area.

15. A display device, characterized in that: Includes the display module described in claim 13 or 14.

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