Temporary bonding liquid wax for wafer thinning and preparation method thereof

Abstract

The invention provides temporary bonding liquid wax for wafer thinning and a preparation method of the temporary bonding liquid wax. The temporary bonding liquid wax comprises the following components in parts by weight: 20-40 parts of an organic solvent, 20-50 parts of high-modulus thermoplastic resin, 10-20 parts of a plasticizer and 0.1-1 part of an auxiliary agent. The temporary bonding liquid wax for wafer thinning can provide enough supporting force in wafer thinning, polishing and other processes, also has the advantages of chemical liquid corrosion resistance, storage stability and the like, and is suitable for a temporary bonding process for wafer thinning processing.

Description

Technical Field

[0001] The invention belongs to the field of wafer manufacturing and relates to a temporary bonding liquid wax for wafer thinning and a preparation method thereof. Background Art

[0002] In recent years, with the continuous innovation and progress of optical equipment and communication equipment, sensors, electronic components and other equipment have been forced to develop in the direction of high, precise and advanced. The basis for all this is the continuous progress and breakthrough of semiconductor packaging technology. What needs to be improved in semiconductor packaging technology is the surface processing quality and yield of wafers. In the wafer, whether it is sapphire substrate or silicon carbide substrate, it has stable chemical properties and high hardness, which makes it very difficult to handle wafers in thinning, cutting, grinding and polishing without breaking. Temporary bonding materials just provide a solution to this problem.

[0003] Compared with the prior art, such as JP2021120429A, cyanoacrylate-based adhesives are used to temporarily fix wafers. However, since the bonding rate of cyanoacrylate-based adhesives is too fast, it is not conducive to processing. It is usually necessary to add reaction inhibitors such as dimethyl phthalate (DMP) or dibutyl phthalate (DBP) to control the bonding rate of cyanoacrylate-based adhesives. Although the addition of reaction inhibitors can suppress the molecular weight of the polymer, it also increases the hardness of the bonding system, resulting in reduced bonding strength, and the choice of organic solvents is also greatly limited.

[0004] CN107011839A discloses a liquid wax and a preparation method thereof, wherein the disclosed liquid wax is compounded with a certain amount of phenolic resin, hydrogenated rosin and small molecule alcohol. Although the product has a strong adhesive force and can solve the problem of wafer slippage during the wafer grinding process, the product uses a small molecule alcohol as a solvent, which makes the viscosity of the product change greatly in the winter (below 20°C) transportation and use environment, which easily causes the poor storage stability of the liquid wax and the occurrence of crystallization and other problems. At the same time, the spin coating film surface TTV is poor and cannot meet the processing requirements of high-end products such as sapphire and compound semiconductors. Summary of the invention

[0005] In order to solve the above-mentioned technical problems, the present application provides a temporary bonding liquid wax for wafer thinning and a preparation method thereof. The temporary bonding liquid wax for wafer thinning can provide sufficient supporting force in processes such as wafer thinning and polishing, and also has the advantages of resistance to chemical liquid corrosion and stable storage. It is suitable for temporary bonding processes for wafer thinning processing.

[0006] In order to achieve the above technical effects, the present invention adopts the following technical solutions:

[0007] One of the purposes of the present invention is to provide a temporary bonding liquid wax for wafer thinning. The composition of the temporary bonding liquid wax includes, by weight: 20 to 40 parts of organic solvent, 20 to 50 parts of high modulus thermoplastic resin, 10 to 20 parts of plasticizer and 0.1 to 1 part of auxiliary agent.

[0008] As a preferred technical solution of the present invention, the high modulus thermoplastic resin includes a high modulus thermoplastic resin which is any one of terpene phenol resin, styrene-modified terpene resin, hydrogenated rosin resin, rosin ester resin, C5 aliphatic hydrocarbon resin, acrylic resin or acrylic ester resin, or a combination of at least two thereof.

[0009] As a preferred technical solution of the present invention, the organic solvent includes one or more of D-limonene, dibasic acid esters, propylene glycol ethyl ether acetate, benzyl alcohol, benzyl acetate, 3-ethoxyethyl propionate, dipropylene glycol methyl ether, ethyl acetate, butyl acetate, ethylene glycol ethyl ether acetate, ethylene glycol butyl ether acetate, and ethylene glycol tert-butyl ether. Preferably, the organic solvent is any one of D-limonene, benzyl alcohol, benzyl acetate, propylene glycol monomethyl ether acetate, and propylene glycol monomethyl ether, or a combination of at least two thereof.

[0010] As a preferred technical solution of the present invention, the plasticizer includes any one of tricresyl phosphate, triphenyl phosphate and aromatic condensed phosphate or a combination of at least two thereof.

[0011] As a preferred technical solution of the present invention, the plasticizer is an aromatic condensed phosphate.

[0012] As a preferred technical solution of the present invention, the auxiliary agent includes an antioxidant and / or a leveling agent.

[0013] As a preferred technical solution of the present invention, the antioxidant includes a phenolic antioxidant and / or a phosphite antioxidant.

[0014] As a preferred technical solution of the present invention, the leveling agent includes any one of acrylic polymer, ester polymer and polysiloxane oligomer or a combination of at least two thereof.

[0015] The second object of the present invention is to provide a method for preparing the temporary bonding liquid wax for wafer thinning provided by the first object, the preparation method comprising:

[0016] The organic solvent, the auxiliary agent and the plasticizer are stirred and mixed to obtain a transparent and clear solution;

[0017] The transparent clear solution and the high modulus thermoplastic resin are stirred and mixed until the solution is clear, and the temporary bonding liquid wax for wafer thinning is obtained.

[0018] As a preferred technical solution of the present invention, solid-liquid separation is performed to remove impurities before discharging.

[0019] Compared with the prior art, the present invention has at least the following beneficial effects:

[0020] (1) The present invention provides a temporary bonding liquid wax for wafer thinning, which can provide strong support for the wafer and has good protection for the wafer;

[0021] (2) The present invention provides a temporary bonding liquid wax for wafer thinning, which has excellent rheological properties and good coating TTV. After thinning and cutting, the film is easily separated from the substrate when heated, which simplifies the process steps, and the residual adhesive is easy to clean with acetone or IPA;

[0022] (3) The present invention provides a temporary bonding liquid wax for wafer thinning, which has good storage stability, small viscosity change range in winter (below 20°C) transportation and use environment, and will not cause crystallization due to solvent volatilization;

[0023] (4) The present invention provides a method for preparing temporary bonding liquid wax for wafer thinning. The preparation method has a simple process and is suitable for industrial production. DETAILED DESCRIPTION

[0024] The technical solution of the present application is further described below through specific implementation methods.

[0025] A specific embodiment of the present application provides a temporary bonding liquid wax for wafer thinning. The composition of the temporary bonding liquid wax, measured by mass, includes: 20 to 40 parts of organic solvent, 20 to 50 parts of high modulus thermoplastic resin, 10 to 20 parts of plasticizer and 0.1 to 1 part of auxiliary agent.

[0026] In the present invention, the selection of high modulus thermoplastic resin can provide sufficient support for the subsequent bonding pair and has a good protection capability for wafers with high bumps; the addition of plasticizer can appropriately reduce the melt viscosity of the material, so that the material can complete the bonding and debonding process at 100-130°C, and the bonding pair TTV (total thickness variation) is good.

[0027] Among them, the content of organic solvent can be 20 parts by weight, 22 parts by weight, 24 parts by weight, 26 parts by weight, 28 parts by weight, 30 parts by weight, 32 parts by weight, 34 parts by weight, 36 parts by weight, 38 parts by weight or 40 parts by weight, etc.; the content of high modulus thermoplastic resin is 20 parts by weight, 25 parts by weight, 30 parts by weight, 35 parts by weight, 40 parts by weight, 45 parts by weight or 50 parts by weight, etc.; the content of plasticizer is 10 parts by weight, 11 parts by weight, 12 parts by weight, 13 parts by weight, 14 parts by weight, 15 parts by weight, 16 parts by weight, 17 parts by weight, 18 parts by weight, 19 parts by weight or 20 parts by weight, etc.; the content of auxiliary agent is 0.1 parts by weight, 0.2 parts by weight, 0.3 parts by weight, 0.4 parts by weight, 0.5 parts by weight, 0.6 parts by weight, 0.7 parts by weight, 0.8 parts by weight, 0.9 parts by weight or 1.0 parts by weight, etc. However, it is not limited to the listed values, and other values ​​not listed within the above numerical ranges are also applicable.

[0028] In a specific embodiment of the present invention, the high modulus thermoplastic resin includes a high modulus thermoplastic resin which is any one of terpene phenol resin, styrene-modified terpene resin, hydrogenated rosin resin, rosin ester resin, C5 aliphatic hydrocarbon resin, acrylic resin or acrylic ester resin, or a combination of at least two thereof.

[0029] In a specific embodiment of the present invention, the high modulus thermoplastic resin is preferably any one of terpene phenol resin, C5 aliphatic hydrocarbon resin, acrylic resin or acrylate resin, or a combination of at least two of them. Typical but non-limiting examples of the combination include a combination of terpene phenol resin and C5 aliphatic hydrocarbon resin, a combination of C5 aliphatic hydrocarbon resin and acrylic resin, a combination of acrylate resin and terpene phenol resin, or a combination of terpene phenol resin, C5 aliphatic hydrocarbon resin and acrylic resin, etc.

[0030] In a specific embodiment of the present invention, the preferred terpene phenol resin has a weight average molecular weight of 700 to 1200; the preferred C5 aliphatic hydrocarbon resin has a weight average molecular weight of 1000 to 2500; the preferred acrylic resin and acrylate resin have a weight average molecular weight of 10,000 to 55,000.

[0031] In a specific embodiment of the present invention, the organic solvent includes one or more of D-limonene, dibasic acid esters, propylene glycol ethyl ether acetate, benzyl alcohol, benzyl acetate, 3-ethoxyethyl propionate, dipropylene glycol methyl ether, ethyl acetate, butyl acetate, ethylene glycol ethyl ether acetate, ethylene glycol butyl ether acetate, and ethylene glycol tert-butyl ether. Preferably, the organic solvent is any one of D-limonene, benzyl alcohol, benzyl acetate, propylene glycol monomethyl ether acetate, and propylene glycol monomethyl ether, or a combination of at least two thereof.

[0032] In a specific embodiment of the present invention, the organic solvent is preferably any one of benzyl alcohol, propylene glycol monomethyl ether acetate, benzyl acetate, ethylene glycol butyl ether acetate, D-limonene and benzyl alcohol, or a combination of at least two thereof. Typical but non-limiting examples of the combination include a combination of benzyl alcohol and propylene glycol monomethyl ether acetate, a combination of propylene glycol monomethyl ether acetate and benzyl acetate, a combination of benzyl acetate and ethylene glycol butyl ether acetate, a combination of ethylene glycol butyl ether acetate and D-limonene, or a combination of D-limonene and benzyl alcohol.

[0033] In a specific embodiment of the present invention, the plasticizer includes any one of tricresyl phosphate (TCP), triphenyl phosphate (TPP) and aromatic condensed phosphate (PX-200) or a combination of at least two thereof.

[0034] In one specific embodiment of the present invention, the plasticizer is preferably an aromatic condensed phosphate.

[0035] In one specific embodiment of the present invention, the auxiliary agent includes an antioxidant and / or a leveling agent.

[0036] In one embodiment of the present invention, the antioxidant comprises a phenolic antioxidant and / or a phosphite antioxidant.

[0037] In a specific embodiment of the present invention, the antioxidant includes antioxidant 1010 and / or antioxidant 1076.

[0038] In a specific embodiment of the present invention, the phosphite antioxidant includes antioxidant 168 and / or antioxidant 626.

[0039] In a specific embodiment of the present invention, the content of the antioxidant in the temporary bonding liquid wax for wafer thinning is 0.3 to 0.5 parts by weight.

[0040] In a specific embodiment of the present invention, the leveling agent includes any one of acrylic polymers, ester polymers and polysiloxane oligomers, or a combination of at least two of them.

[0041] In a specific embodiment of the present invention, the content of the leveling agent in the temporary bonding liquid wax for wafer thinning is 0.1 to 0.5 parts by weight.

[0042] In the present invention, adding a small amount of antioxidant and leveling agent can appropriately improve the heat resistance of the material and reduce the shrinkage or thickening of the film surface.

[0043] The specific embodiment of the present application provides a method for preparing a temporary bonding liquid wax for wafer thinning, the preparation method comprising:

[0044] (1) stirring and mixing an organic solvent, an auxiliary agent and a plasticizer to obtain a transparent and clear solution;

[0045] (2) The transparent clear solution and the high modulus thermoplastic resin are stirred and mixed until the solution is clear, and a temporary bonding liquid wax for wafer thinning is obtained.

[0046] In a specific embodiment of the present invention, the mixing and stirring temperature in step (1) is 25-35° C., the stirring rate is 30-100 rpm, and the stirring time is 1-2 h.

[0047] In a specific embodiment of the present invention, the mixing and stirring temperature in step (2) is 30-35° C., the stirring rate is 50-150 rpm, and the stirring time is 3-8 h.

[0048] As a preferred technical solution of the present invention, solid-liquid separation is performed to remove impurities before discharging.

[0049] As a preferred technical solution of the present invention, the solid-liquid separation method is preferably filtration, and the accuracy grade of the filter element is 1.0 to 2.0 μm.

[0050] For the convenience of understanding the present invention, the present invention lists the following embodiments. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0051] Example 1

[0052] The present invention provides a temporary bonding liquid wax for wafer thinning, and the raw material components and usage are shown in Table 1 below:

[0053] Table 1

[0054] substance Addition amount Benzyl alcohol 4.380kg Propylene glycol monomethyl ether acetate 2.900kg Terpene phenol resin 7.560kg Acrylic resin 2.710kg Triphenyl phosphate 2.330kg Antioxidant 1076 0.100kg Leveling agent BYK-390 0.100kg total 20.000kg

[0055] Preparation process: Add organic solvent, leveling agent and antioxidant to a stirring kettle with mechanical stirring and circulating water cooling system, start stirring, and stir until the solution is clear and transparent; add terpene phenol resin, acrylic resin and triphenyl phosphate while stirring, and stir for 8 hours; observe the temperature change in the kettle during this period. If the temperature rises too fast, adjust the circulating cooling water temperature and control the temperature at 30°C. When the material in the kettle becomes clear and transparent, stop stirring and filter to obtain the hot slip temporary bonding liquid wax.

[0056] Example 2

[0057] The present invention provides a temporary bonding liquid wax for wafer thinning, and the raw material components and dosages are shown in Table 2 below:

[0058] Table 2

[0059]

[0060]

[0061] Preparation process: Add organic solvent, leveling agent and antioxidant to a stirring kettle with mechanical stirring and circulating water cooling system, start stirring, and stir until the solution is clear and transparent; add C5 aliphatic hydrocarbon resin, acrylic resin and aromatic condensed phosphate (PX-200) while stirring, and stir for 7 hours; observe the temperature change in the kettle during this period. If the temperature rises too fast, adjust the circulating cooling water temperature and control the temperature at 30°C. When the material in the kettle becomes clear and transparent, stop stirring and filter to obtain the hot slip temporary bonding liquid wax.

[0062] Example 3

[0063] The present invention provides a temporary bonding liquid wax for wafer thinning, and the raw material components and dosages are shown in Table 3 below:

[0064] Table 3

[0065]

[0066]

[0067] Preparation process: Add organic solvent, leveling agent and antioxidant to a stirring kettle with mechanical stirring and circulating water cooling system, start stirring, add C5 aliphatic hydrocarbon resin, acrylic resin and aromatic condensed phosphate (PX-200) while stirring, and stir for 7 hours; observe the temperature change in the kettle during this period, if the temperature rises too fast, adjust the circulating cooling water temperature and control the temperature at 30°C. When the material in the kettle becomes clear and transparent, stop stirring and filter to obtain the hot slip temporary bonding liquid wax.

[0068] Example 4

[0069] The present invention provides a temporary bonding liquid wax for wafer thinning, and the raw material components and dosages are shown in Table 4 below:

[0070] Table 4

[0071] substance Addition amount Ethyl 3-ethoxypropionate 2.000kg Ethylene glycol tert-butyl ether 2.000kg Terpene phenol resin 5.000kg Acrylic resin 3.000kg C5 aliphatic hydrocarbon resin 2.000kg Tricresyl phosphate 5.800kg Antioxidant 1010 0.100kg Leveling agent BYK-3410 0.100kg total 20.000kg

[0072] The preparation method is the same as that of Example 3.

[0073] Example 5

[0074] The present invention provides a temporary bonding liquid wax for wafer thinning, and the raw material components and dosages are shown in Table 5 below:

[0075] Table 5

[0076] substance Addition amount Ethyl 3-ethoxypropionate 3.000kg Ethylene glycol tert-butyl ether 3.000kg Terpene phenol resin 4.000kg Acrylic resin 2.000kg C5 aliphatic hydrocarbon resin 2.000kg Tricresyl phosphate 5.800kg Antioxidant 1076 0.100kg Leveling agent BYK-3410 0.100kg total 20.000kg

[0077] The preparation method is the same as that of Example 3.

[0078] Example 6

[0079] The present invention provides a temporary bonding liquid wax for wafer thinning, and the raw material components and usage are shown in Table 6 below:

[0080] Table 6

[0081]

[0082]

[0083] The preparation method is the same as that of Example 3.

[0084] Example 7

[0085] The present invention provides a temporary bonding liquid wax for wafer thinning. The raw material components are the same as those in Example 3 except that the aromatic condensed phosphate (PX-200) is replaced by tricresyl phosphate.

[0086] Example 8

[0087] The present invention provides a temporary bonding liquid wax for wafer thinning. The raw material components are the same as those in Example 3 except that the aromatic condensed phosphate (PX-200) is replaced by trimethyl phosphate.

[0088] Comparative Example 1

[0089] This comparative example 1 provides a liquid wax, and the raw material composition is shown in Table 7.

[0090] Table 7

[0091]

[0092]

[0093] Preparation process: Add organic solvent, leveling agent and antioxidant to a stirring kettle with mechanical stirring and circulating water cooling system, start stirring, add 2124 phenolic resin and hydrogenated rosin resin while stirring, and stir for 3 hours; observe the temperature change in the kettle during this period, if the temperature rises too fast, adjust the circulating cooling water temperature and control the temperature at 30°C. When the material in the kettle becomes clear and transparent, stop stirring and filter to obtain the hot slip temporary bonding liquid wax.

[0094] Comparative Example 2

[0095] In this comparative example, except that the aromatic condensed phosphate (PX-200) is replaced by phthalate, the other conditions are the same as those of Example 3.

[0096] Comparative Example 3

[0097] In this comparative example, except that the aromatic condensed phosphate (PX-200) is replaced by chlorinated paraffin, the other conditions are the same as those of Example 3.

[0098] The performance of the temporary bonding liquid wax for wafer thinning provided in Examples 1-8 and Comparative Examples 1-3 was tested, and the results are shown in Table 8.

[0099] Performance Test:

[0100] (1) Storage stability

[0101] Low temperature storage: Store the liquid wax sample in a 100 ml brown glass bottle, seal it and place it in a 4°C freezer for 30 days. Observe whether there is any precipitation in the liquid wax and measure the viscosity at room temperature.

[0102] High temperature storage: Similarly, store the liquid wax sample in a 100 ml brown glass bottle, seal it and place it in a 70°C forced air oven for 7 days to observe whether there is any precipitation in the liquid wax and measure the viscosity at room temperature;

[0103] (2) Cleaning test: Taking a 6-inch silicon wafer as an example, liquid wax was spin-coated at 1000 rpm / 30 s, and then baked in a 120°C oven for 6 min. The dried wafer was taken out and placed on a spin coater. A certain amount of acetone or isopropanol was used to soak the film surface for 1 min. The spin coating was started (1000 rpm). Acetone or isopropanol was added with a dropper bottle for cleaning for 2 min while spin coating. The film surface was then blown dry with nitrogen and observed with a microscope to see if there was any wax residue.

[0104] (3) Film thickness / TTV: measured using Corning Flatmaster 200 flatness tester;

[0105] (4) Film surface hardness: Tested according to the test method provided in GB / T21838-2008 "Instrumented indentation test for hardness and material parameters of metal materials", and the test sample is the coated wafer;

[0106] (5) Resistance to chemical solution corrosion: The temporarily bonded wafers were immersed in 65% concentrated nitric acid at 60°C for 120 minutes, then taken out, rinsed with clean water, and dried. Visual inspection was conducted to see if there was any dissolution or whitening at the edges of the temporarily bonded wafers. If dissolution or whitening was found, it was corrosion visible to the naked eye. If no dissolution or whitening was found, it was no corrosion visible to the naked eye. In addition, the depth of corrosion at the edges of the temporarily bonded wafers was observed using a microscope.

[0107] (6) Rheological viscosity test: Anton Paar rheometer was used to measure the rheological viscosity of the liquid wax film;

[0108] (7) Bonding warpage: The test is performed according to the test method provided in GB / T 6620-2009 "Non-contact test method for silicon wafer warpage", and the test sample is a temporarily bonded wafer.

[0109] Table 8

[0110]

[0111]

[0112]

[0113]

[0114] #If the test result is excellent or the effect is good, the evaluation is "○"; if the test result is defective or the effect is poor, the evaluation is "×".

[0115] From the data in Table 8, we can see that:

[0116] (1) The film surface hardness of the temporary bonding liquid wax provided in Examples 1 to 8 is moderate, which can provide strong support for the wafer and has good protection for the wafer. The temporary bonded wafer made by using it also has excellent corrosion resistance to chemical solutions. By comparing Example 3 with Examples 7 to 8, it can be seen that the use of aromatic condensed phosphate (PX-200) can effectively improve the film surface TTV and reduce the bond warpage.

[0117] (2) The membrane surface hardness of the temporary bonding liquid wax provided in Comparative Example 1 is too low, the supporting force is insufficient, and the viscosity changes greatly after low-temperature or high-temperature testing, which is not conducive to transportation and use in low-temperature environments.

[0118] (3) The temporary bonding adhesive provided in Examples 2 to 3 has a higher film surface hardness, but the temporary bonding wafers made therefrom have poor resistance to chemical solution corrosion. This is because the poor uniformity of the film surface causes slight snowflake-shaped bubbles to appear on the temporarily bonded wafers, and the film layer edge defects are not resistant to chemical reagent corrosion.

[0119] The applicant declares that the present invention illustrates the detailed process equipment and process flow of the present invention through the above-mentioned embodiments, but the present invention is not limited to the above-mentioned detailed process equipment and process flow, that is, it does not mean that the present invention must rely on the above-mentioned detailed process equipment and process flow to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of various raw materials of the product of the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. A temporary bonding liquid wax for wafer thinning, characterized in that: The temporary bonding liquid wax comprises, by weight, 20 to 40 parts of an organic solvent, 20 to 50 parts of a high modulus thermoplastic resin, 10 to 20 parts of a plasticizer and 0.1 to 1 part of an auxiliary agent.

2. The temporary bonding liquid wax for wafer thinning according to claim 1, characterized in that: The high modulus thermoplastic resin includes any one of terpene phenol resin, styrene-modified terpene resin, hydrogenated rosin resin, rosin ester resin, C5 aliphatic hydrocarbon resin, acrylic resin or acrylic ester resin, or a combination of at least two of them.

3. The temporary bonding liquid wax for wafer thinning according to claim 1, characterized in that: The organic solvent includes any one of D-limonene, dibasic acid esters, propylene glycol ethyl ether acetate, benzyl alcohol, benzyl acetate, 3-ethoxyethyl propionate, dipropylene glycol methyl ether, ethyl acetate, butyl acetate, ethylene glycol ethyl ether acetate, ethylene glycol butyl ether acetate, and ethylene glycol tert-butyl ether, or a combination of at least two thereof.

4. The temporary bonding liquid wax for wafer thinning according to claim 1, characterized in that: The plasticizer includes any one of tricresyl phosphate, triphenyl phosphate and aromatic condensed phosphate or a combination of at least two thereof.

5. The temporary bonding liquid wax for wafer thinning according to claim 5, characterized in that: The plasticizer is an aromatic condensed phosphate.

6. The temporary bonding liquid wax for wafer thinning according to claim 1, characterized in that: The auxiliary agent includes an antioxidant and / or a leveling agent.

7. The temporary bonding liquid wax for wafer thinning according to claim 6, characterized in that: The antioxidant includes a phenolic antioxidant and / or a phosphite antioxidant.

8. The temporary bonding liquid wax for wafer thinning according to claim 6, characterized in that: The leveling agent includes any one of acrylic polymer, ester polymer and polysiloxane oligomer or a combination of at least two of them.

9. A method for preparing a temporary bonding liquid wax for wafer thinning according to any one of claims 1 to 8, characterized in that: The preparation method comprises: The organic solvent, the auxiliary agent and the plasticizer are stirred and mixed to obtain a transparent and clear solution; The transparent clear solution and the high modulus thermoplastic resin are stirred and mixed until the solution becomes clear, and the temporary bonding liquid wax for wafer thinning is obtained by discharging the material.

10. The preparation method according to claim 9, characterized in that: Before discharging, solid-liquid separation is performed to remove impurities.

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