High-purity gallium crystallization control method, device, medium, equipment and crystallization system

Abstract

The invention discloses a high-purity gallium crystallization control method and device, a medium, equipment and a crystallization system. The method comprises the steps that the current pressure of the bottom in a crystallization tank is obtained; determining the current mass of the liquid metal gallium in the crystallization tank according to the current pressure; according to the current mass, the mass reduction amount of the liquid metal gallium in the crystallization tank in the current time period is determined, and the current crystallization speed of the liquid metal gallium in the crystallization tank is determined according to the mass reduction amount; whether the current crystallization speed is equal to a preset crystallization speed or not is judged, and if not, the temperature field of the crystallization tank is controlled according to the size relation between the current crystallization speed and the preset crystallization speed. According to the invention, the crystallization speed can be automatically controlled.

Description

Background Art

[0002] High-purity gallium crystallization is an important process for purifying metallic gallium. There is a difference in the solubility of impurity elements in solid and liquid metallic gallium. Therefore, multiple crystallization processes are used to reduce the impurity content and thus improve the purity of gallium.

[0003] At present, in the crystallization process, the residual mass of liquid metal gallium is mainly observed and judged manually, and the temperature field is manually adjusted according to the residual mass to control the crystallization rate and crystallization speed. However, on the one hand, the accuracy of the residual mass obtained by manual judgment is poor, resulting in poor control effect of the crystallization rate and crystallization speed. On the other hand, the large number of manual participation times leads to low production efficiency. Summary of the invention

[0004] The embodiments of the present application provide a system and method for purifying high-purity gallium, which can automatically control the crystallization rate.

[0005] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by the practice of the present application.

[0006] According to a first aspect of the present application, a high-purity gallium crystallization control method is provided, which is applied to a crystallization tank, wherein the crystallization tank is used to crystallize liquid metal gallium, and the method comprises:

[0007] Obtaining the current pressure at the bottom of the crystallization tank;

[0008] Determining the current mass of the liquid metal gallium in the crystallization tank according to the current pressure;

[0009] Determine, according to the current mass, a mass reduction of the liquid metal gallium in the crystallization tank during a current time period, and determine, according to the mass reduction, a current crystallization speed of the liquid metal gallium in the crystallization tank;

[0010] It is determined whether the current crystallization speed is equal to the preset crystallization speed. If not, the temperature field of the crystallization tank is controlled according to the magnitude relationship between the current crystallization speed and the preset crystallization speed.

[0011] In some embodiments of the present application, based on the above solution, determining the current mass of the liquid metal gallium in the crystallization tank according to the current pressure includes:

[0012] The current mass is determined according to a target relationship and the current pressure, wherein the target relationship is a corresponding relationship between the mass of the liquid metal gallium in the crystallization tank and the pressure at the bottom of the crystallization tank.

[0013] In some embodiments of the present application, based on the above solution, before determining the current quality according to the target relationship and the current pressure, the method further includes:

[0014] In the process of the crystallization tank crystallizing the liquid metal gallium, detecting sample data pairs at at least three time points, wherein the sample data pairs include a pressure sample value at the bottom of the crystallization tank and a mass sample value of the liquid metal gallium in the crystallization tank;

[0015] The target relationship is determined according to the sample data pairs at the at least three time points.

[0016] In some embodiments of the present application, based on the above scheme, a discharge pipe is provided at the bottom of the crystallization tank. When the liquid metal gallium in the crystallization tank is crystallized, the discharge pipe is in a closed state. The obtaining of the current pressure at the bottom of the crystallization tank includes:

[0017] During the crystallization of the liquid metal gallium in the crystallization tank, the discharge pipe is adjusted to a closed state, and the discharge pipe is heated according to a first preset temperature, wherein the first preset temperature is greater than 30° C.;

[0018] At a preset position of the discharge pipe, detecting and obtaining a first pressure of the liquid metal gallium in the discharge pipe;

[0019] The current pressure is determined based on the difference between the first pressure and a preset pressure, wherein the preset pressure is the pressure detected at a preset position of the discharge pipe when the liquid level of the liquid metal gallium in the crystallization tank is flush with the end of the discharge pipe located in the crystallization tank.

[0020] In some embodiments of the present application, based on the above scheme, the temperature field of the crystallization tank includes a cooling temperature field outside the crystallization tank, and the cooling temperature field is less than 28° C., and the temperature field of the crystallization tank is controlled according to the magnitude relationship between the current crystallization rate and the preset crystallization rate, including:

[0021] If the current crystallization speed is greater than the preset crystallization speed, increasing the temperature of the cooling temperature field;

[0022] If the current crystallization speed is less than the preset crystallization speed, the temperature of the cooling temperature field is reduced.

[0023] In some embodiments of the present application, based on the above solution, after determining the current mass of the liquid metal gallium in the crystallization tank according to the current pressure, the method further includes:

[0024] Determining a current crystallization rate according to the current mass and a preset mass, wherein the preset mass is the mass of the liquid metal gallium in the crystallization tank before crystallization;

[0025] It is determined whether the current crystallization rate is equal to a preset crystallization rate. If so, the crystallization of the liquid metal gallium in the crystallization tank is stopped.

[0026] According to a second aspect of the present application, a high-purity gallium control device is provided, comprising:

[0027] A detection component, used to detect the current pressure at the bottom of the crystallization tank;

[0028] The controller is used to obtain the current pressure at the bottom of the crystallization tank, and determine the current mass of the liquid metal gallium in the crystallization tank according to the current pressure, determine the mass reduction of the liquid metal gallium in the crystallization tank in the current time period according to the current mass, and determine the current crystallization speed of the liquid metal gallium in the crystallization tank according to the mass reduction; the adjustment unit determines whether the current crystallization speed is equal to the preset crystallization speed, and if not, controls the temperature field of the crystallization tank according to the relationship between the current crystallization speed and the preset crystallization speed.

[0029] According to a third aspect of the present application, a high-purity gallium crystallization system is provided, comprising:

[0030] A high-purity gallium crystallization control device according to any embodiment of the second aspect of the present application;

[0031] A crystallization tank, used for crystallizing liquid metal gallium;

[0032] A stirring assembly, comprising a closed hollow shell for containing a first liquid medium, a driving member for driving the hollow shell to rise and fall in the crystallization tank, and a first heating member for heating the first liquid medium to a temperature above a second preset temperature, wherein the first heating member is connected to the controller, and the second preset temperature is 30° C.;

[0033] The external temperature component includes a shell arranged outside the crystallization tank, a closed chamber for containing a second liquid medium is formed between the shell and the crystallization tank, and a cooling element for cooling the second liquid medium to below a third preset temperature is provided on the chamber, wherein the cooling element is connected to the controller, and the third preset temperature is 28°C.

[0034] According to the fourth aspect of the present application, a computer-readable storage medium is provided, on which a computer program is stored. The computer program includes executable instructions. When the executable instructions are executed by a processor, the method described in any embodiment of the first aspect of the present application is implemented.

[0035] According to the fifth aspect of the present application, an electronic device is provided, comprising: one or more processors; and a memory for storing executable instructions of the processors, wherein when the executable instructions are executed by the one or more processors, the one or more processors implement the method described in any embodiment of the first aspect of the present application.

[0036] The beneficial effects of this application are as follows:

[0037] The current crystallization speed can be determined according to the current pressure. When the current crystallization speed is not equal to the preset crystallization speed, the temperature field of the crystallization tank is controlled according to the magnitude relationship between the current crystallization speed and the preset crystallization speed, thereby realizing automatic control of the crystallization speed.

[0038] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments consistent with the present application, and together with the specification, are used to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0040] Figure 1 A flow chart of a high-purity gallium crystallization control method in an embodiment of the present application is shown;

[0041] Figure 2 A schematic diagram of a high-purity gallium crystallization system in an embodiment of the present application is shown;

[0042] Figure 3 A schematic diagram showing a computer-readable storage medium in an embodiment of the present application is shown;

[0043] Figure 4 A schematic diagram showing the system structure of an electronic device in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0045] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, known methods, devices, realizations or operations are not shown or described in detail to avoid blurring the various aspects of the present application.

[0046] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically independent entities. That is, these functional entities may be implemented in software form, or in one or more hardware modules or integrated circuits, or in different networks and / or processor devices and / or microcontroller devices.

[0047] The flowcharts shown in the accompanying drawings are only exemplary and do not necessarily include all the contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps can be decomposed, and some operations / steps can be combined or partially combined, so the actual execution order may change according to actual conditions.

[0048] In the description of this application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the feature. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0049] Figure 1 A flow chart showing a high purity gallium crystallization control method in an embodiment of the present application is shown in FIG. Figure 1 , provides a high-purity gallium crystallization control method, which is applied to a crystallization tank, wherein the crystallization tank is used to crystallize liquid metal gallium, and at least includes S1 to S4, which are described in detail as follows:

[0050] In step S1, the current pressure of the bottom of the crystallization tank is obtained. The bottom of the crystallization tank refers to the inner wall of the bottom of the crystallization tank, and the current pressure refers to the pressure of the bottom of the crystallization tank at the current time.

[0051] In step S2, the current mass of the liquid metal gallium in the crystallization tank is determined according to the current pressure. The current mass refers to the mass of the liquid metal gallium in the crystallization tank at the current time. When liquid metal gallium is placed in the crystallization tank, different weights of liquid metal gallium correspond to different current pressures, that is, the current pressure corresponds to the weight of the liquid metal gallium in the crystallization tank. Based on the corresponding relationship between the two, the current mass can be determined according to the current pressure.

[0052] In step S3, the mass reduction of the liquid metal gallium in the crystallization tank during the current time period is determined according to the current mass, and the current crystallization speed of the liquid metal gallium in the crystallization tank is determined according to the mass reduction.

[0053] In some embodiments, determining the mass reduction of the liquid metal gallium in the crystallization tank in the current time period according to the current mass includes: determining the mass reduction according to the difference between the current mass at the start time of the current time period and the current mass at the end time of the current time period. For example, if the current time period is a time period from 10 seconds before the current time to the current time, then the start time of the current time period is 10 seconds before the current time, and the end time of the current time period is the current time.

[0054] In some embodiments, determining the current crystallization speed of the liquid metal gallium in the crystallization tank according to the mass reduction includes: determining the current crystallization speed according to the quotient of the mass reduction and the duration of the current time period. For example, if the mass reduction is 1.8 kg and the duration of the current time period is 10 minutes, the current crystallization speed is 1.8 kg / 10 min=0.18 kg / min.

[0055] In step S4, it is determined whether the current crystallization speed is equal to the preset crystallization speed. If not, the temperature field of the crystallization tank is controlled according to the magnitude relationship between the current crystallization speed and the preset crystallization speed. The preset crystallization speed is the desired crystallization speed.

[0056] In some embodiments, after determining whether the current crystallization speed is equal to the preset crystallization speed, the method further includes: if so, maintaining the temperature field of the crystallization tank unchanged.

[0057] In some embodiments, determining the current mass of the liquid metal gallium in the crystallization tank according to the current pressure includes: determining the current mass according to a target relationship and the current pressure, wherein the target relationship is the corresponding relationship between the mass of the liquid metal gallium in the crystallization tank and the pressure at the bottom of the crystallization tank.

[0058] In some embodiments, before determining the current quality according to the target relationship and the current pressure, the method further includes: detecting sample data pairs at at least three time points during the crystallization of liquid metal gallium in the crystallization tank, the sample data pairs including the pressure sample value at the bottom of the crystallization tank and the mass sample value of the liquid metal gallium in the crystallization tank; and determining the target relationship according to the sample data pairs at at least three time points. For example, the three time points are the first time, the second time, and the third time, respectively, and the pressure sample values ​​are detected at the first time, the second time, and the third time, and then the liquid metal gallium in the crystallization tank is poured out to detect the mass sample value.

[0059] In some embodiments, a discharge pipe is provided at the bottom of the crystallization tank, and when the liquid metal gallium in the crystallization tank is crystallized, the discharge pipe is in a closed state, and the obtaining of the current pressure at the bottom of the crystallization tank includes: in the process of crystallizing the liquid metal gallium in the crystallization tank, adjusting the discharge pipe to a closed state, and heating the discharge pipe according to a first preset temperature, wherein the first preset temperature is greater than 30°C; detecting a first pressure of the liquid metal gallium in the discharge pipe at a preset position of the discharge pipe; and determining the current pressure according to the difference between the first pressure and the preset pressure, wherein the preset pressure is the pressure detected at the preset position of the discharge pipe when the liquid surface of the liquid metal gallium in the crystallization tank and the end of the discharge pipe located in the crystallization tank are flush. The first preset temperature is greater than 30°C, on the one hand, it can prevent the crystallization of the liquid metal gallium in the discharge pipe from affecting the pressure detection, and on the other hand, it can transfer heat to the upper end of the discharge pipe through heat conduction, so as to prevent the crystallization of the liquid metal gallium at the upper end of the discharge pipe from affecting the pressure detection. It should be noted that the current pressure is the difference between the first pressure and the preset pressure, the preset pressure is a fixed value, and the first pressure is a changing value that changes with the crystallization process. If the liquid metal gallium in the discharge pipe crystallizes, which is equivalent to a decrease in the preset pressure, the current pressure is larger than the actual pressure. If there are more liquid metal gallium crystals at the upper end of the discharge pipe, the upper end of the discharge pipe may be blocked, and the pressure of the liquid metal gallium in the crystallization tank cannot be transmitted to the discharge pipe, making it difficult to perform pressure detection.

[0060] In some embodiments, the upper end of the discharge pipe is flush with the bottom of the crystallization tank, and the lower end is located below the bottom of the crystallization tank.

[0061] In some embodiments, the temperature field of the crystallization tank includes a cooling temperature field located outside the crystallization tank, and the cooling temperature field is less than 28°C. The temperature field of the crystallization tank is controlled according to the relationship between the current crystallization rate and the preset crystallization rate, including: if the current crystallization rate is greater than the preset crystallization rate, the temperature of the cooling temperature field is increased, that is, if the crystallization rate is too high, the temperature of the cooling temperature field is increased to reduce the crystallization rate; if the current crystallization rate is less than the preset crystallization rate, the temperature of the cooling temperature field is reduced, that is, if the crystallization rate is too low, the temperature of the cooling temperature field is reduced to increase the crystallization rate.

[0062] In some embodiments, after determining the current mass of the liquid metal gallium in the crystallization tank according to the current pressure, the method further includes: determining the current crystallization rate according to the current mass and a preset mass, wherein the preset mass is the mass of the liquid metal gallium in the crystallization tank before crystallization; and determining whether the current crystallization rate is equal to the preset crystallization rate, and if so, stopping crystallization of the liquid metal gallium in the crystallization tank. The preset mass can be understood as the initial weight added to the crystallization tank, and the preset crystallization rate is the desired crystallization rate.

[0063] According to a second aspect of the present application, a high-purity gallium control device is provided, comprising:

[0064] A detection component, used to detect the current pressure at the bottom of the crystallization tank;

[0065] The controller is used to obtain the current pressure at the bottom of the crystallization tank, and determine the current mass of the liquid metal gallium in the crystallization tank according to the current pressure, determine the mass reduction of the liquid metal gallium in the crystallization tank in the current time period according to the current mass, and determine the current crystallization speed of the liquid metal gallium in the crystallization tank according to the mass reduction, and the adjustment unit determines whether the current crystallization speed is equal to the preset crystallization speed. If not, the temperature field of the crystallization tank is controlled according to the magnitude relationship between the current crystallization speed and the preset crystallization speed. The controller can be a PLC controller or an industrial computer.

[0066] Figure 2 A schematic diagram of a high-purity gallium crystallization system in an embodiment of the present application is shown. Figure 2 1-second temperature sensor, 2-third temperature sensor, 3-pressure sensor, 4-second heating element, 5-discharging valve, 6-discharging pipe, 7-bracket, 8-chamber, 9-water outlet valve, 10-water inlet valve, 11-crystallization tank, 12-hollow shell, 13-heating rod, 14-first temperature sensor, 15-driving element, 16-controller, 17-frame, see Figure 2According to the third aspect of the present application, a high-purity gallium crystallization system is provided, comprising: a high-purity gallium crystallization control device as described in any embodiment of the second aspect of the present application; a crystallization tank 11, used to crystallize liquid metal gallium; a stirring component, comprising a closed hollow shell for holding a first liquid medium, a driving member 15 for driving the hollow shell to rise and fall in the crystallization tank 11, and a first heating member for heating the first liquid medium to a second preset temperature or higher, wherein the first heating member is connected to the controller 16, and the second preset temperature is 30°C; an external temperature component, comprising a shell arranged outside the crystallization tank 11, a closed chamber 8 for holding a second liquid medium is formed between the shell and the crystallization tank 11, and a cooling member is provided on the chamber 8 for cooling the second liquid medium to a third preset temperature or lower, wherein the cooling member is connected to the controller 16, and the third preset temperature is 28°C. The first liquid medium and the second liquid medium can be water. The external temperature component is used to provide the cooling temperature field.

[0067] In some embodiments, the driving member 15 is a cylinder or a hydraulic cylinder.

[0068] In some embodiments, a discharge pipe 6 is provided at the bottom of the crystallization tank 11, and a discharge valve 5 is provided on the discharge pipe 6, and the discharge valve 5 is located below the bottom of the crystallization tank 11. The upper end of the discharge pipe 6 is flush with the bottom of the crystallization tank 11, and the lower end is located below the bottom of the crystallization tank 11. The detection component includes a pressure sensor 3 arranged on the discharge pipe 6, and the pressure sensor 3 is connected to the controller 16. The pressure sensor 3 is located between the discharge valve 5 and the upper end of the discharge pipe 6.

[0069] In some embodiments, the discharge pipe 6 includes: a main pipe, the upper end of which is connected to the bottom of the crystallization tank 11, and the lower end is connected to two branch pipes, the discharge valve 5 is arranged on one of the branch pipes, and the pressure sensor 3 is arranged on the other branch pipe.

[0070] In some embodiments, the first heating element is a heating rod 13 disposed on the hollow shell, the heating rod 13 is in contact with the first liquid medium in the hollow shell, and the heating rod 13 is connected to the controller 16 .

[0071] In some embodiments, the system further includes: a first temperature sensor 14, which is disposed on the hollow shell, wherein a probe of the first temperature sensor 14 is in contact with the first liquid medium, and the first temperature sensor 14 is connected to the controller 16. The controller 16 controls the heating rod 13 according to the detection result of the first temperature sensor 14, so as to control the temperature of the first liquid medium to be above a second preset temperature.

[0072] In some embodiments, the second liquid medium is water, the cooling element includes a water chiller, a water inlet pipe and a water outlet pipe, the water inlet pipe is provided with a water inlet valve 10, the water outlet pipe is provided with a water outlet valve 9, the water outlet valve 9 and the water inlet valve 10 are both connected to the controller 16, the water inlet pipe is located above the water outlet pipe, the water inlet pipe and the water outlet pipe are arranged on the shell, one end of the water inlet pipe is connected to the chamber 8, and the other end is connected to the outlet of the water chiller, one end of the water outlet pipe is connected to the chamber 8, and the other end is connected to the inlet of the water chiller. The water chiller sends cold water into the chamber 8 through the water inlet pipe, and the water in the chamber 8 that absorbs heat is sent from the water outlet pipe to the water chiller for cooling, thereby circulating.

[0073] In some embodiments, the system further includes: a second temperature sensor 1, which is disposed on the housing, a probe of the second temperature sensor 1 is in contact with the second liquid medium, and the second temperature sensor 1 is connected to the controller 16. The controller 16 controls the water inlet valve 10 and the water outlet valve 9 according to the detection result of the second temperature sensor 1, so as to control the temperature of the second liquid medium to be below a third preset temperature.

[0074] In some embodiments, the system further includes: a third temperature sensor 2, which is disposed on the discharge pipe 6, the third temperature sensor 2 is located between the discharge valve 5 and the upper end of the discharge pipe 6, and the third temperature sensor 2 is connected to the controller 16.

[0075] In some embodiments, the system further comprises: a bracket 7 for mounting the housing and a frame 17 for mounting the bracket 7 .

[0076] Based on the same inventive concept, as a fourth aspect, the present application also provides a computer-readable storage medium on which is stored a program product capable of implementing the above-mentioned method for purifying high-purity gallium in this specification. In some possible implementations, various aspects of the present application can also be implemented in the form of a program product, which includes a program code. When the program product is run on a terminal device, the program code is used to enable the terminal device to execute the steps according to various exemplary implementations of the present application described in the above-mentioned "Exemplary Method" section of this specification.

[0077] refer to Figure 3As shown, a program product 200 for implementing the above method according to an embodiment of the present application is described, which can adopt a portable compact disk read-only memory (CD-ROM) and include program code, and can be run on a terminal device, such as a personal computer. However, the program product of the present application is not limited thereto. In this document, a readable storage medium can be any tangible medium containing or storing a program, which can be used by or in combination with an instruction execution system, an apparatus or a device.

[0078] The program product may use any combination of one or more readable media. The readable medium may be a readable signal medium or a readable storage medium. The readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples (non-exhaustive list) of readable storage media include: an electrical connection with one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0079] Computer readable signal media may include data signals propagated in baseband or as part of a carrier wave, in which readable program code is carried. Such propagated data signals may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. Readable signal media may also be any readable medium other than a readable storage medium, which may send, propagate, or transmit a program for use by or in conjunction with an instruction execution system, apparatus, or device.

[0080] The program code embodied on the readable medium may be transmitted using any appropriate medium, including but not limited to wireless, wired, optical cable, RF, etc., or any suitable combination of the foregoing.

[0081] Program code for performing the operations of the present application may be written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Java, C++, etc., and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user computing device, partially on the user device, as a separate software package, partially on the user computing device and partially on a remote computing device, or entirely on a remote computing device or server. In the case of a remote computing device, the remote computing device may be connected to the user computing device through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computing device (e.g., using an Internet service provider to connect through the Internet).

[0082] As another aspect, the present application also provides an electronic device capable of implementing the above method.

[0083] Those skilled in the art will appreciate that various aspects of the present application may be implemented as a system, method or program product. Therefore, various aspects of the present application may be specifically implemented in the following forms, namely: a complete hardware implementation, a complete software implementation (including firmware, microcode, etc.), or a combination of hardware and software, which may be collectively referred to as "circuit", "module" or "system" herein.

[0084] Refer to the following Figure 4 The electronic device 300 according to this embodiment of the present application is described. Figure 4 The electronic device 300 shown is merely an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0085] like Figure 4 As shown, the electronic device 300 is in the form of a general computing device. The components of the electronic device 300 may include but are not limited to: at least one processing unit 310, at least one storage unit 320, and a bus 330 connecting different system components (including the storage unit 320 and the processing unit 310).

[0086] The storage unit stores program codes, which can be executed by the processing unit 310, so that the processing unit 310 executes the steps described in the above “Example Method” section of this specification according to various exemplary implementations of the present application.

[0087] The storage unit 320 may include a readable medium in the form of a volatile storage unit, such as a random access memory unit (RAM) 321 and / or a cache memory unit 322 , and may further include a read-only memory unit (ROM) 323 .

[0088] The storage unit 320 may also include a program / utility 324 having a set (at least one) of program modules 325, such program modules 325 including but not limited to: an operating system, one or more application programs, other program modules, and program data, each of which or some combination may include an implementation of a network environment.

[0089] Bus 330 may represent one or more of several types of bus structures, including a memory unit bus or memory unit controller, a peripheral bus, an accelerated graphics port, a processing unit, or a local bus using any of a variety of bus architectures.

[0090] The electronic device 300 may also communicate with one or more external devices 400 (e.g., keyboards, pointing devices, Bluetooth devices, etc.), one or more devices that enable a user to interact with the electronic device 300, and / or any device that enables the electronic device 300 to communicate with one or more other computing devices (e.g., routers, modems, etc.). Such communication may be performed through an input / output (I / O) interface 350. Furthermore, the electronic device 300 may also communicate with one or more networks (e.g., a local area network (LAN), a wide area network (WAN), and / or a public network, such as the Internet) through a network adapter 360. Figure 4 As shown, the network adapter 360 communicates with other modules of the electronic device 300 via the bus 330. It should be understood that, although not shown in the figure, other hardware and / or software modules can be used in conjunction with the electronic device 300, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, and data backup storage systems.

[0091] The functions described herein may be implemented in hardware, software executed by a processor, firmware, or any combination thereof. If implemented in software executed by a processor, the functions may be stored as one or more instructions or codes on a computer-readable medium or transmitted via a computer-readable medium. Other examples and implementations are within the scope and spirit of the present application and the appended claims. For example, due to the nature of software, the functions described above may be implemented using software executed by a processor, hardware, firmware, hard wiring, or a combination of any of these. In addition, each functional unit may be integrated into a processing unit, each unit may exist physically separately, or two or more units may be integrated into one unit.

[0092] In the several embodiments provided in this application, it should be understood that the disclosed technical content can be implemented in other ways. Among them, the device embodiments described above are only schematic. For example, the division of the units can be a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of units or modules, which can be electrical or other forms.

[0093] The units described as separate components may or may not be physically separated, and the components of the control device may or may not be physical units, that is, they may be located in one place or distributed in multiple units. Some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0094] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application can be essentially or partly or all or partly embodied in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, server or network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), mobile hard disk, disk or optical disk, etc., which can store program code.

[0095] The above description is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present application shall be included in the scope of the claims of the present application.

Claims

1. A high-purity gallium crystallization control method, characterized in that: Applied to a crystallization tank, the crystallization tank is used to crystallize liquid metal gallium, the method comprising: Obtaining the current pressure at the bottom of the crystallization tank; Determining the current mass of the liquid metal gallium in the crystallization tank according to the current pressure; Determine, according to the current mass, a mass reduction of the liquid metal gallium in the crystallization tank during a current time period, and determine, according to the mass reduction, a current crystallization speed of the liquid metal gallium in the crystallization tank; It is determined whether the current crystallization speed is equal to the preset crystallization speed. If not, the temperature field of the crystallization tank is controlled according to the magnitude relationship between the current crystallization speed and the preset crystallization speed.

2. A high-purity gallium crystallization control method according to claim 1, characterized in that: The step of determining the current mass of the liquid metal gallium in the crystallization tank according to the current pressure includes: The current mass is determined according to a target relationship and the current pressure, wherein the target relationship is a corresponding relationship between the mass of the liquid metal gallium in the crystallization tank and the pressure at the bottom of the crystallization tank.

3. A high-purity gallium crystallization control method according to claim 2, characterized in that: Before determining the current quality according to the target relationship and the current pressure, the method further includes: In the process of the crystallization tank crystallizing the liquid metal gallium, detecting sample data pairs at at least three time points, wherein the sample data pairs include a pressure sample value at the bottom of the crystallization tank and a mass sample value of the liquid metal gallium in the crystallization tank; The target relationship is determined according to the sample data pairs at the at least three time points.

4. A high-purity gallium crystallization control method according to claim 1, characterized in that: A discharge pipe is provided at the bottom of the crystallization tank. When the liquid metal gallium in the crystallization tank is crystallized, the discharge pipe is in a closed state. The obtaining of the current pressure at the bottom of the crystallization tank includes: During the crystallization of the liquid metal gallium in the crystallization tank, the discharge pipe is adjusted to a closed state, and the discharge pipe is heated according to a first preset temperature, wherein the first preset temperature is greater than 30° C.; At a preset position of the discharge pipe, detecting and obtaining a first pressure of the liquid metal gallium in the discharge pipe; The current pressure is determined based on the difference between the first pressure and a preset pressure, wherein the preset pressure is the pressure detected at a preset position of the discharge pipe when the liquid level of the liquid metal gallium in the crystallization tank is flush with the end of the discharge pipe located in the crystallization tank.

5. The high-purity gallium crystallization control method according to claim 1, characterized in that: The temperature field of the crystallization tank includes a cooling temperature field outside the crystallization tank, the cooling temperature field is less than 28° C., and the temperature field of the crystallization tank is controlled according to the magnitude relationship between the current crystallization speed and the preset crystallization speed, including: If the current crystallization speed is greater than the preset crystallization speed, increasing the temperature of the cooling temperature field; If the current crystallization speed is less than the preset crystallization speed, the temperature of the cooling temperature field is reduced.

6. A high-purity gallium crystallization control method according to claim 1, characterized in that: After determining the current mass of the liquid metal gallium in the crystallization tank according to the current pressure, the method further includes: Determining a current crystallization rate according to the current mass and a preset mass, wherein the preset mass is the mass of the liquid metal gallium in the crystallization tank before crystallization; It is determined whether the current crystallization rate is equal to a preset crystallization rate. If so, the crystallization of the liquid metal gallium in the crystallization tank is stopped.

7. A high-purity gallium control device, characterized in that: include: A detection component, used to detect the current pressure at the bottom of the crystallization tank; The controller is used to obtain the current pressure at the bottom of the crystallization tank, and determine the current mass of the liquid metal gallium in the crystallization tank according to the current pressure, determine the mass reduction of the liquid metal gallium in the crystallization tank in the current time period according to the current mass, and determine the current crystallization speed of the liquid metal gallium in the crystallization tank according to the mass reduction; the adjustment unit determines whether the current crystallization speed is equal to the preset crystallization speed, and if not, controls the temperature field of the crystallization tank according to the relationship between the current crystallization speed and the preset crystallization speed.

8. A high purity gallium crystallization system, characterized in that: include: A high-purity gallium crystallization control device as described in claim 7; A crystallization tank, used for crystallizing liquid metal gallium; A stirring assembly, comprising a closed hollow shell for containing a first liquid medium, a driving member for driving the hollow shell to rise and fall in the crystallization tank, and a first heating member for heating the first liquid medium to a temperature above a second preset temperature, wherein the first heating member is connected to the controller, and the second preset temperature is 30° C.; The external temperature component includes a shell arranged outside the crystallization tank, a closed chamber for containing a second liquid medium is formed between the shell and the crystallization tank, and a cooling element for cooling the second liquid medium to below a third preset temperature is provided on the chamber, wherein the cooling element is connected to the controller, and the third preset temperature is 28°C.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: The computer program includes executable instructions, and when the executable instructions are executed by a processor, the method described in any one of claims 1 to 6 is implemented.

10. An electronic device, characterized in that: include: one or more processors; A memory for storing executable instructions of the processor, wherein when the executable instructions are executed by the one or more processors, the one or more processors implement the method according to any one of claims 1 to 6.

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