Method for preparing cutting tool by depositing high-purity diamond film through HFCVD (High Frequency Chemical Vapor Deposition) process

Abstract

The invention discloses a preparation method of a cutting tool for depositing a high-purity diamond film through an HFCVD (High Frequency Chemical Vapor Deposition) process. The preparation method comprises seven steps of cutting tool pretreatment, process material selection, preparation, condition setting, HFCVD processing, workpiece cooling and completion. According to the method for preparing the cutting tool for depositing the high-purity diamond film through the HFCVD process, organic matter and inorganic matter on the surface of the cutting tool are removed through microwave plasma cleaning and argon adding as assistance, so that the adhesive force of the surface of the cutting tool is increased, tantalum wires are adopted as hot wires, hydrogen and methane are adopted as process gas, and therefore the cutting tool is prepared. A high-purity diamond film is deposited on an objective table in a hearth needing to be deposited by optimizing the hot wire temperature and the gas flow, the adhesive force is improved by pretreating a base material, and the deposited diamond film is ensured to have excellent physical and chemical properties by accurately controlling technological parameters and adjusting pressure, temperature and time. Therefore, the efficient and durable cutting tool is prepared.

Description

Technical Field

[0001] The invention relates to the technical field of HFCVD process deposition, in particular to a method for preparing a cutting tool for depositing a high-purity diamond film through the HFCVD process. Background Art

[0002] Diamond has unique wear resistance, so diamond coatings are often used to improve the performance of cutting tools and wear-resistant parts. In order to obtain a diamond coating on a suitable substrate, the right amount of gas coating must be mixed and heated to make it react. Methods for exciting the gas phase include microwave plasma, flame jet or laser. HFCVD is hot wire vapor deposition technology. Generally, in this method, a diluted mixture of carbon-containing gases such as methane in hydrogen is thermally activated by hot wires at sub-atmospheric pressure to vapor deposit a diamond film coating on the surface of the cutting tool.

[0003] When the HFCVD process is used to deposit diamond film on cutting tools, there is a problem of low purity of the diamond coating, which affects the performance of the cutting tool. Therefore, a cutting tool preparation method for depositing high-purity diamond film by HFCVD process is proposed to facilitate the deposition of high-purity diamond on the surface of the cutting tool. Summary of the invention

[0004] The object of the present invention is to provide a method for preparing a cutting tool by depositing a high-purity diamond film through a HFCVD process, so as to solve the problems raised in the above background technology.

[0005] To achieve the above object, the present invention provides the following technical solutions:

[0006] A method for preparing a cutting tool by depositing a high-purity diamond film through a HFCVD process, the method comprising the following steps:

[0007] Step 1: Cutting tool pretreatment, cutting tool cleaning, through microwave plasma cleaning, adding argon as an auxiliary, to remove organic and inorganic substances on the surface of the cutting tool to increase the adhesion of the cutting tool surface;

[0008] Step 2: Process material selection, tantalum wire is used as the hot wire, and hydrogen and methane are used as the process gas;

[0009] Step 3: Preparation: Introduce inert protective gas into the stage in the furnace where deposition is required, further preheat the furnace, and roughly evacuate the furnace;

[0010] Step 4: Condition setting, maintain the preheating temperature in the furnace, set the hot wire temperature to 2200℃-2500℃, set the gas flow rate to 20sccm-100sccm, set the deposition time, and set the furnace pressure;

[0011] Step 5: HFCVD processing, the cutting tool is synchronously preheated to the preheating temperature in the furnace, methane and hydrogen are mixed and introduced into the furnace, and the flow rate is adjusted by a thermal mass flow controller. The mixed process gas contacts the hot wire to deposit and form a high-purity diamond film on the surface of the cutting tool;

[0012] Step 6: Workpiece cooling, the cutting tool is cooled to a low temperature state in the vacuum chamber;

[0013] Step 7: Complete, remove the cutting tool and shut down the HFCVD device.

[0014] As a further solution of the present invention: in step three, the inert gas is argon, the furnace preheating temperature is 2000° C., and the vacuum is roughly drawn to about 8 Pa.

[0015] As a further solution of the present invention: in the step 4, the deposition time is set to 2-10 hours, and the furnace pressure is set to 20 mbar-200 mbar.

[0016] As a further solution of the present invention: in the step 5, the mixing condition of methane and hydrogen is that methane is diluted in hydrogen at 1 vol%-5 vol%.

[0017] As a further solution of the present invention: in the step 2, the tantalum wire is arranged in a spirally wound shape.

[0018] As a further solution of the present invention: the low temperature state in step six is ​​100°C.

[0019] As a further solution of the present invention: the pretreatment in step 1 also includes surface roughness treatment and surface modification treatment.

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] 1. The present invention achieves the deposition of high-purity diamond film by optimizing the temperature of the hot wire and the gas flow rate.

[0022] 2. The present invention improves adhesion by pretreating the substrate and precisely controls process parameters, adjusting pressure, temperature and time to ensure that the deposited diamond film has excellent physical and chemical properties, thereby preparing an efficient and durable cutting tool. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 Schematic diagram of the structure of a cutting tool preparation method for depositing high-purity diamond film through the HFCVD process.

[0024] Figure 2 Flow chart of a method for preparing a cutting tool by depositing a high-purity diamond film through a HFCVD process. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] Embodiment 1:

[0027] See also Figures 1-2 In an embodiment of the present invention, a method for preparing a cutting tool by depositing a high-purity diamond film through a HFCVD process, the method steps are as follows:

[0028] Step 1: Cutting tool pretreatment, cutting tool cleaning, through microwave plasma cleaning, adding argon as an auxiliary, to remove organic and inorganic substances on the surface of the cutting tool, and then perform surface roughness treatment and surface modification treatment to increase the adhesion of the cutting tool surface;

[0029] Step 2: Process material selection: Tantalum wire is used as the hot wire, and the tantalum wire is set in a spiral winding shape to increase the contact area. Hydrogen and methane are used as process gases;

[0030] Step 3: Preparation: Introduce inert protective gas into the stage in the furnace where deposition is required. The inert gas is argon. The furnace is further preheated at a temperature of 2000°C. At the same time, the furnace is roughly evacuated to about 8Pa.

[0031] Step 4: Condition setting, maintain the preheating temperature in the furnace, set the hot wire temperature to 2200°C, set the gas flow rate to 20sccm, set the deposition time to 2, set the furnace pressure to 20mbar;

[0032] Step 5: HFCVD processing, the cutting tool is synchronously preheated to the preheating temperature in the furnace, and methane and hydrogen are mixed and introduced into the furnace. The mixing condition of methane and hydrogen is that methane is diluted in hydrogen at 1 vol%. The flow rate is adjusted by a thermal mass flow controller. The mixed process gas contacts the hot wire to deposit and form a high-purity diamond film on the surface of the cutting tool;

[0033] Step 6: Workpiece cooling, the cutting tool is cooled to 100°C in the vacuum chamber;

[0034] Step 7: Complete, remove the cutting tool and shut down the HFCVD device.

[0035] Embodiment 2:

[0036] See also Figures 1-2 In an embodiment of the present invention, a method for preparing a cutting tool by depositing a high-purity diamond film through a HFCVD process, the method steps are as follows:

[0037] Step 1: Cutting tool pretreatment, cutting tool cleaning, through microwave plasma cleaning, adding argon as an auxiliary, to remove organic and inorganic substances on the surface of the cutting tool, and then perform surface roughness treatment and surface modification treatment to increase the adhesion of the cutting tool surface;

[0038] Step 2: Process material selection: Tantalum wire is used as the hot wire, and the tantalum wire is set to be spirally wound to increase the contact area. Hydrogen and methane are used as process gases;

[0039] Step 3: Preparation: Introduce inert protective gas into the stage in the furnace where deposition is required. The inert gas is argon. The furnace is further preheated at a temperature of 2000°C. At the same time, the furnace is roughly evacuated to about 8Pa.

[0040] Step 4: Condition setting, maintain the preheating temperature in the furnace, set the hot wire temperature to 2500°C, set the gas flow rate to 100 sccm, set the deposition time to 10 hours, set the furnace pressure to 200 mbar;

[0041] Step 5: HFCVD processing, the cutting tool is synchronously preheated to the preheating temperature in the furnace, and methane and hydrogen are mixed and introduced into the furnace. The mixing condition of methane and hydrogen is that methane is diluted in hydrogen at 5 vol%. The flow rate is adjusted by a thermal mass flow controller. The mixed process gas contacts the hot wire to deposit and form a high-purity diamond film on the surface of the cutting tool;

[0042] Step 6: Workpiece cooling, the cutting tool is cooled to 100°C in the vacuum chamber;

[0043] Step 7: Complete, remove the cutting tool and shut down the HFCVD device.

[0044] Embodiment three:

[0045] See also Figures 1-2 In an embodiment of the present invention, a method for preparing a cutting tool by depositing a high-purity diamond film through a HFCVD process, the method steps are as follows:

[0046] Step 1: Cutting tool pretreatment, cutting tool cleaning, through microwave plasma cleaning, adding argon as an auxiliary, to remove organic and inorganic substances on the surface of the cutting tool, and then perform surface roughness treatment and surface modification treatment to increase the adhesion of the cutting tool surface;

[0047] Step 2: Process material selection: Tantalum wire is used as the hot wire, and the tantalum wire is set to be spirally wound to increase the contact area. Hydrogen and methane are used as process gases;

[0048] Step 3: Preparation: Introduce inert protective gas into the stage in the furnace where deposition is required. The inert gas is argon. The furnace is further preheated at a temperature of 2000°C. At the same time, the furnace is roughly evacuated to about 8Pa.

[0049] Step 4: Condition setting, maintain the preheating temperature in the furnace, set the hot wire temperature to 2350°C, set the gas flow rate to 60sccm, set the deposition time to 6H, set the furnace pressure to 11mbar;

[0050] Step 5: HFCVD processing, the cutting tool is synchronously preheated to the preheating temperature in the furnace, and methane and hydrogen are mixed and introduced into the furnace. The mixing condition of methane and hydrogen is that methane is diluted in hydrogen at 3 vol%. The flow rate is adjusted by a thermal mass flow controller. The mixed process gas contacts the hot wire to deposit and form a high-purity diamond film on the surface of the cutting tool;

[0051] Step 6: Workpiece cooling, the cutting tool is cooled to 100°C in the vacuum chamber;

[0052] Step 7: Complete, remove the cutting tool and shut down the HFCVD device.

[0053] Embodiment 4:

[0054] See also Figures 1-2 In an embodiment of the present invention, a method for preparing a cutting tool by depositing a high-purity diamond film through a HFCVD process, the method steps are as follows:

[0055] Step 1: Cutting tool pretreatment, cutting tool cleaning, through microwave plasma cleaning, adding argon as an auxiliary, to remove organic and inorganic substances on the surface of the cutting tool, and then perform surface roughness treatment and surface modification treatment to increase the adhesion of the cutting tool surface;

[0056] Step 2: Process material selection: Tantalum wire is used as the hot wire, and the tantalum wire is set in a spiral winding shape to increase the contact area. Hydrogen and methane are used as process gases;

[0057] Step 3: Preparation: Introduce inert protective gas into the stage in the furnace where deposition is required. The inert gas is argon. The furnace is further preheated at a temperature of 2000°C. At the same time, the furnace is roughly evacuated to about 8Pa.

[0058] Step 4: Condition setting, maintain the preheating temperature in the furnace, set the hot wire temperature to 2200°C, set the gas flow rate to 100 sccm, set the deposition time to 10 hours, set the furnace pressure to 200 mbar;

[0059] Step 5: HFCVD processing, the cutting tool is synchronously preheated to the preheating temperature in the furnace, and methane and hydrogen are mixed and introduced into the furnace. The mixing condition of methane and hydrogen is that methane is diluted in hydrogen at 5 vol%. The flow rate is adjusted by a thermal mass flow controller. The mixed process gas contacts the hot wire to deposit and form a high-purity diamond film on the surface of the cutting tool;

[0060] Step 6: Workpiece cooling, the cutting tool is cooled to 100°C in the vacuum chamber;

[0061] Step 7: Complete, remove the cutting tool and shut down the HFCVD device.

[0062] Embodiment five:

[0063] See also Figures 1-2 In an embodiment of the present invention, a method for preparing a cutting tool by depositing a high-purity diamond film through a HFCVD process, the method steps are as follows:

[0064] Step 1: Cutting tool pretreatment, cutting tool cleaning, through microwave plasma cleaning, adding argon as an auxiliary, to remove organic and inorganic substances on the surface of the cutting tool, and then perform surface roughness treatment and surface modification treatment to increase the adhesion of the cutting tool surface;

[0065] Step 2: Process material selection: Tantalum wire is used as the hot wire, and the tantalum wire is set to be spirally wound to increase the contact area. Hydrogen and methane are used as process gases;

[0066] Step 3: Preparation: Introduce inert protective gas into the stage in the furnace where deposition is required. The inert gas is argon. The furnace is further preheated at a temperature of 2000°C. At the same time, the furnace is roughly evacuated to about 8Pa.

[0067] Step 4: Condition setting, maintain the preheating temperature in the furnace, set the hot wire temperature to 2500°C, set the gas flow rate to 20 sccm, set the deposition time to 2H, set the furnace pressure to 20 mbar;

[0068] Step 5: HFCVD processing, the cutting tool is synchronously preheated to the preheating temperature in the furnace, and methane and hydrogen are mixed and introduced into the furnace. The mixing condition of methane and hydrogen is that methane is diluted in hydrogen at 1 vol%. The flow rate is adjusted by a thermal mass flow controller. The mixed process gas contacts the hot wire to deposit and form a high-purity diamond film on the surface of the cutting tool;

[0069] Step 6: Workpiece cooling, the cutting tool is cooled to 100°C in the vacuum chamber;

[0070] Step 7: Complete, remove the cutting tool and shut down the HFCVD device.

[0071] Embodiment six:

[0072] See also Figures 1-2 In an embodiment of the present invention, a method for preparing a cutting tool by depositing a high-purity diamond film through a HFCVD process, the method steps are as follows:

[0073] Step 1: Cutting tool pretreatment, cutting tool cleaning, through microwave plasma cleaning, adding argon as an auxiliary, to remove organic and inorganic substances on the surface of the cutting tool, and then perform surface roughness treatment and surface modification treatment to increase the adhesion of the cutting tool surface;

[0074] Step 2: Process material selection: Tantalum wire is used as the hot wire, and the tantalum wire is set to be spirally wound to increase the contact area. Hydrogen and methane are used as process gases;

[0075] Step 3: Preparation: Introduce inert protective gas into the stage in the furnace where deposition is required. The inert gas is argon. The furnace is further preheated at a temperature of 2000°C. At the same time, the furnace is roughly evacuated to about 8Pa.

[0076] Step 4: Condition setting, maintain the preheating temperature in the furnace, set the hot wire temperature to 2200°C, set the gas flow rate to 75sccm, set the deposition time to 8H, set the furnace pressure to 100mbar;

[0077] Step 5: HFCVD processing, the cutting tool is synchronously preheated to the preheating temperature in the furnace, and methane and hydrogen are mixed and introduced into the furnace. The mixing condition of methane and hydrogen is that methane is diluted in hydrogen at 4 vol%. The flow rate is adjusted by a thermal mass flow controller. The mixed process gas contacts the hot wire to deposit and form a high-purity diamond film on the surface of the cutting tool;

[0078] Step 6: Workpiece cooling, the cutting tool is cooled to 100°C in the vacuum chamber;

[0079] Step 7: Complete, remove the cutting tool and shut down the HFCVD device.

[0080] In summary, from Examples 1 to 6, it is found that the best reaction occurs when the gas flow rate is 75 sccm and the hot wire temperature is 2200 degrees, and a high-purity diamond film can be obtained. Moreover, under the above-mentioned adjustments, the quality of the diamond film is effectively improved with the increase of time, the increase of the methane ratio and the increase of the furnace pressure, and the uniformity of the diamond particles is improved. Through surface pretreatment, the adhesion of the diamond film is effectively increased.

[0081] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a cutting tool by depositing a high-purity diamond film by HFCVD process, characterized in that: The method steps are as follows: Step 1: Cutting tool pretreatment, cutting tool cleaning, through microwave plasma cleaning, adding argon as an auxiliary, to remove organic and inorganic substances on the surface of the cutting tool to increase the adhesion of the cutting tool surface; Step 2: Process material selection, tantalum wire is used as the hot wire, and hydrogen and methane are used as the process gas; Step 3: Preparation: Introduce inert protective gas into the stage in the furnace where deposition is required, further preheat the furnace, and roughly evacuate the furnace; Step 4: Condition setting, maintain the preheating temperature in the furnace, set the hot wire temperature to 2200℃-2500℃, set the gas flow rate to 20sccm-100sccm, set the deposition time, and set the furnace pressure; Step 5: HFCVD processing, the cutting tool is synchronously preheated to the preheating temperature in the furnace, methane and hydrogen are mixed and introduced into the furnace, and the flow rate is adjusted by a thermal mass flow controller. The mixed process gas contacts the hot wire to deposit and form a high-purity diamond film on the surface of the cutting tool; Step 6: Workpiece cooling, the cutting tool is cooled to a low temperature state in the vacuum chamber; Step 7: Complete, remove the cutting tool and shut down the HFCVD device.

2. The method for preparing a cutting tool by depositing a high-purity diamond film by HFCVD process according to claim 1, characterized in that: In step 3, argon is used as the inert gas, the furnace preheating temperature is 2000° C., and the vacuum is roughly drawn to 8 Pa.

3. The method for preparing a cutting tool by depositing a high-purity diamond film by HFCVD process according to claim 1, characterized in that: In the step 4, the deposition time is set to 2-10 hours, and the furnace pressure is set to 20 mbar-200 mbar.

4. The method for preparing a cutting tool by depositing a high-purity diamond film by HFCVD process according to claim 1, characterized in that: The mixing condition of methane and hydrogen in step 5 is that methane is diluted in hydrogen at 1 vol%-5 vol%.

5. The method for preparing a cutting tool by depositing a high-purity diamond film by HFCVD process according to claim 1, characterized in that: In the step 2, the tantalum wire is arranged in a spirally wound shape.

6. The method for preparing a cutting tool by depositing a high-purity diamond film by HFCVD process according to claim 1, characterized in that: The low temperature state in step six is ​​100°C.

7. The method for preparing a cutting tool by depositing a high-purity diamond film by HFCVD process according to claim 1, characterized in that: The pretreatment in step 1 also includes surface roughness treatment and surface modification treatment.

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