Method and device for regulating and controlling temperature of single crystal furnace and electronic equipment

Abstract

The invention provides a single crystal furnace temperature regulation and control method and device and electronic equipment, and relates to the technical field of single crystal furnaces, and the method comprises the following steps: in response to a re-temperature-regulation instruction, obtaining a last seeding pulling speed in a single crystal furnace; after it is determined that the last seeding pulling speed does not meet the technological standard requirement, the liquid temperature offset in the single crystal furnace is calculated on the basis of a preset algorithm and the last seeding pulling speed, and the seeding liquid temperature is corrected on the basis of the liquid temperature offset; after the temperature is corrected, the seed crystal is controlled to descend to the liquid level of the seeding liquid, and the welding diameter of the seed crystal is obtained; the temperature adjusting strategy is determined according to the welding diameter, and the temperature of the seeding liquid is adjusted based on the temperature adjusting strategy, so that the temperature of the seeding liquid is corrected by referring to the seeding pulling speed given last time, the operation stability and accuracy are effectively guaranteed, the whole process is automatically carried out, the dependence on the skills of personnel is greatly reduced, and the production efficiency is improved. And the production efficiency is remarkably improved, and then the man-machine ratio is greatly increased.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal furnaces, and in particular to a temperature control method, device and electronic equipment for a single crystal furnace. Background Art

[0002] After the single crystal furnace is charged with materials, operations such as melting and reheating are key steps in the single crystal silicon growth process, especially in the application of the Czochralski method (CZ method).

[0003] In the prior art, relevant personnel are required to pay close attention to the temperature in the single crystal furnace at all times and manually perform temperature adjustment, welding, and temperature recovery operations.

[0004] However, manual welding, manual reheating and manual temperature adjustment have extremely poor controllability, resulting in poor efficiency and accuracy of the operation. Summary of the invention

[0005] The present application provides a single crystal furnace temperature control method, device and electronic equipment, which are used to solve the problem that the existing manual welding, manual temperature recovery and manual temperature adjustment have extremely poor controllability, resulting in poor operation efficiency and accuracy.

[0006] In a first aspect, the present application provides a single crystal furnace temperature control method, the method comprising:

[0007] In response to a re-temperature adjustment instruction, obtaining the last seeding speed in the single crystal furnace;

[0008] After determining that the last seeding pulling speed does not meet the process standard requirements, calculating the liquid temperature offset in the single crystal furnace based on a preset algorithm and the last seeding pulling speed, and correcting the seeding liquid temperature based on the liquid temperature offset;

[0009] After the temperature is corrected, the seed crystal is controlled to descend to the liquid level of the seeding liquid, and the fusion diameter of the seed crystal is obtained;

[0010] A temperature adjustment strategy is determined according to the welding diameter, and the seeding liquid temperature is adjusted based on the temperature adjustment strategy.

[0011] Optionally, calculating the liquid temperature offset in the single crystal furnace based on a preset algorithm and the last seeding pulling speed, and correcting the seeding liquid temperature based on the liquid temperature offset, including:

[0012] Based on the standard seeding pulling speed and the last seeding pulling speed, a liquid temperature offset in the single crystal furnace is calculated using a preset algorithm;

[0013] The seeding liquid temperature in the current single crystal furnace is obtained, and the seeding liquid temperature in the single crystal furnace is corrected using the liquid temperature offset to obtain a corrected liquid temperature.

[0014] Optionally, the formula corresponding to the preset algorithm is: liquid temperature offset = (standard seeding pulling speed - previous seeding pulling speed) / 100.

[0015] Optionally, after the temperature is corrected, controlling the seed crystal to descend to the liquid level of the seeding liquid includes:

[0016] In response to the user's operation of the seed crystal lowering welding step, the seed crystal is controlled to be lowered from the first crystal position to the second crystal position in sequence based on the preset step time for preheating;

[0017] After the preheating is completed, the seed crystal is controlled to descend and melt, and a liquid surface contact voltage value is obtained, and it is determined whether the seed crystal has descended to the liquid surface according to the liquid surface contact voltage value;

[0018] When the liquid surface contact voltage value meets a preset threshold value, it is determined that the seed crystal has descended to the liquid surface of the seeding liquid.

[0019] Optionally, obtaining the welding diameter of the seed crystal includes:

[0020] After determining that the seed crystal drops to the liquid level, collecting a seed crystal image of the seed crystal;

[0021] The fusion diameter of the seed crystal in the seed crystal image is measured using a diameter capture line.

[0022] Optionally, determining a temperature adjustment strategy according to the welding diameter, and adjusting the seeding liquid temperature based on the temperature adjustment strategy, including:

[0023] Obtaining the seeding power of the single crystal furnace, and judging whether the seed crystal is completely welded according to the shrinking size of the welding diameter;

[0024] When the shrinking size of the fusion diameter is within the first threshold interval, it is determined that the seed crystal is fused completely, and the power of the main heater is controlled to drop below the seeding power until the seeding liquid temperature drops to the standard temperature, and then the power of the main heater is gradually increased to the seeding power;

[0025] When the shrinkage size of the fusion diameter is within the second threshold interval, controlling the seed crystal to rise to the second crystal position, and controlling the power of the main heater to rise until the seeding liquid temperature reaches the correction temperature;

[0026] When the shrinkage size of the fusion diameter is within a third threshold interval, controlling the seed crystal to descend a preset distance, and controlling the power of the main heater to decrease until the seeding liquid temperature reaches a correction temperature;

[0027] The upper limit of the first threshold interval is the lower limit of the third threshold interval; and the lower limit of the first threshold interval is the upper limit of the second threshold interval.

[0028] Optionally, the method further includes:

[0029] After determining that the temperature of the seeding liquid reaches the correction temperature, the seed crystal is controlled to perform the welding operation again.

[0030] Optionally, the method further includes:

[0031] After adjusting the temperature of the seeding liquid based on the temperature adjustment strategy, obtaining the liquid temperature in the single crystal furnace;

[0032] When it is determined that the liquid temperature is at a preset temperature, controlling the liquid temperature to maintain at the preset temperature for a preset time, and acquiring a crystal image;

[0033] After determining that four crystal points of the crystal are full and round based on the crystal image, the single crystal furnace is controlled to enter the seeding step.

[0034] In a second aspect, the present application provides a single crystal furnace temperature control device, the device comprising:

[0035] An acquisition module, used for acquiring the last seeding speed in the single crystal furnace in response to a re-temperature adjustment instruction;

[0036] A correction module, for calculating the liquid temperature offset in the single crystal furnace based on a preset algorithm and the last seeding speed after determining that the last seeding speed does not meet the process standard requirements, and correcting the seeding liquid temperature based on the liquid temperature offset;

[0037] A control module, used for controlling the seed crystal to descend to the liquid level of the seeding liquid after the temperature is corrected, and obtaining the fusion diameter of the seed crystal;

[0038] An adjustment module is used to determine a temperature adjustment strategy according to the welding diameter, and adjust the temperature of the seeding liquid based on the temperature adjustment strategy.

[0039] In a third aspect, the present application provides an electronic device, comprising: a processor, and a memory communicatively connected to the processor;

[0040] The memory stores computer-executable instructions;

[0041] The processor executes the computer-executable instructions stored in the memory to implement the method as described in any one of the first aspects.

[0042] In a fourth aspect, the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores computer-executable instructions, and when the computer-executable instructions are executed by a processor, they are used to implement the method as described in any one of the first aspects.

[0043] In a fifth aspect, the present application provides a computer program product, comprising a computer program, which, when executed by a processor, implements the method as described in any one of the first aspects.

[0044] In summary, the present application provides a single crystal furnace temperature control method, device and electronic equipment, which can automatically perform temperature control after the single crystal furnace completes the temperature control operation, and at the same time, can automatically complete a series of operations such as seed crystal melting, temperature recovery and temperature stabilization. Specifically, after the temperature control of the single crystal furnace is completed, the temperature control is re-entered. Before the temperature adjustment, the liquid temperature offset is calculated with reference to the last seeding speed, and then the liquid temperature offset is adjusted based on the liquid temperature offset to correct the seeding liquid temperature. The purpose of this step is to adjust the liquid temperature appropriately before temperature adjustment to avoid the inappropriate liquid temperature due to the inaccurate automatic temperature recovery, resulting in waste of work time; and then in After the temperature is corrected, the seed crystal is controlled to descend to the liquid level of the seeding liquid for welding, and the diameter measurement is automatically turned on to obtain the welding diameter of the seed crystal. Then, according to the shrinkage size of the welding diameter, the appropriate temperature control strategy is selected to adjust the seeding liquid temperature. In this way, in terms of the power of the circulation section, the seeding liquid temperature can be corrected with reference to the last given seeding pulling speed, thereby effectively ensuring the stability and accuracy of the operation. The entire process is automated, which greatly reduces the dependence on personnel skills, so that operators do not need to have excessively high professional skills requirements, significantly improves production efficiency, and thus greatly improves the man-machine ratio. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0046] Figure 1 A schematic diagram of the process of temperature adjustment for an existing single crystal furnace;

[0047] Figure 2 A schematic diagram of an application scenario provided for an embodiment of the present application;

[0048] Figure 3 A schematic diagram of a single crystal furnace temperature control method provided in an embodiment of the present application;

[0049] Figure 4 A schematic flow chart of an optional single crystal furnace temperature control method provided in an embodiment of the present application;

[0050] Figure 5 A schematic diagram of the structure of a single crystal furnace temperature control device provided in an embodiment of the present application;

[0051] Figure 6 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application.

[0052] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0053] In order to facilitate the clear description of the technical solutions of the embodiments of the present application, in the embodiments of the present application, the words "first", "second" and the like are used to distinguish the same items or similar items with substantially the same functions and effects. For example, the first device and the second device are only used to distinguish different devices, and their order is not limited. Those skilled in the art can understand that the words "first", "second" and the like do not limit the quantity and execution order, and the words "first", "second" and the like do not necessarily limit them to be different.

[0054] It should be noted that, in this application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in this application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0055] In the present application, "at least one" means one or more, and "plurality" means two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the previous and next associated objects are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can mean: a, b, c, ab, ac, bc, or abc, where a, b, c can be single or multiple.

[0056] The following is an explanation of the professional terms involved in this application:

[0057] Seed crystal: refers to a small crystal used to guide the growth of a single crystal.

[0058] Seed crystal melting: refers to the process of lowering the seed crystal into the molten polysilicon liquid and melting them together during the growth of single crystal silicon.

[0059] Seeding: refers to the operation process in which the growth of single crystal silicon is guided by seed crystals during the growth process, so that the molten silicon liquid gradually crystallizes into single crystal silicon rods.

[0060] Seeding pulling speed: refers to the speed at which the seed crystal is pulled out of the molten material in the initial stage of crystal growth (i.e., the seeding stage).

[0061] Seeding power: refers to the heating power required to control the introduction of seed crystal into molten silicon liquid and start the growth of single crystal silicon during the growth process of single crystal silicon, especially in the CZ method.

[0062] Crystal shrinkage: refers to the phenomenon that the diameter of the crystal shrinks during the growth process of single crystal silicon; the purpose of crystal shrinkage is to gradually reduce the diameter of the crystal at the end of the growth of the single crystal silicon rod to form a tip for subsequent processing.

[0063] Main heater power: also known as main power (Main Power), refers to the main electrical power used to heat the crucible and molten polysilicon in the single crystal furnace.

[0064] Aperture point: refers to the phenomenon that optical inhomogeneity or defects appear on the crystal surface due to changes in temperature, power or other process parameters during the growth of single crystal silicon.

[0065] Seed crystal welding: refers to the process of bringing the seed crystal into contact with the molten material and forming a stable welding point.

[0066] The four crystal points are full and round: it means that during the growth process of the crystal, the four main crystal points formed on the surface of the crystal (usually the four corners or specific positions of the crystal) have a full and round shape; among them, the four points usually refer to the four main positions where the seed crystal contacts the molten material; full means that the shape of the crystal point is full, without depressions or defects; round means that the shape of the crystal point is smooth, without sharp edges or protrusions.

[0067] Temperature recovery: refers to the process of automatically increasing the main power to the seeding power when the liquid temperature drops to 1454.5℃ after the main power is reduced.

[0068] Crystal rise system: refers to the mechanical and electronic control system used to control the rise speed, position and rotation of the seed crystal and growing crystal during the growth process of single crystal silicon.

[0069] Breaking and lifting out: refers to the process of lifting the crystal out of the molten silicon by breaking the connection with the liquid surface after defects appear in the crystal during the growth process of single crystal silicon.

[0070] Shoulder breaking: refers to the process of lifting the crystal out of the molten silicon by cutting off the connection between the crystal and the liquid surface when the crystal grows to the shoulder (i.e. the process of the crystal gradually expanding from the thin neck to the target diameter) during the growth process of single crystal silicon.

[0071] Crystal cutting: refers to the process of lifting the seed crystal out of the liquid surface when the seeding speed does not meet the process standards during the growth process of the seed crystal after welding.

[0072] In one possible implementation, Figure 1 The schematic diagram of the existing single crystal furnace temperature control process is as follows: Figure 1 As shown, after the temperature control of the single crystal furnace is completed, the temperature control specialist performs the operation of lowering the seed crystal for melting, so that the seed crystal begins to preheat according to the parameters. After the preheating is completed, when the furnace liquid temperature display value is at 1458-1462℃, the specialist manually lowers the seed crystal to the liquid surface for melting; further, after the seed crystal is lowered to the liquid surface, the seed crystal aperture is observed, and after the crystal shrinkage is determined, the main heater power is manually reduced to below 15kW for crystal induction power for cooling; further, the aperture exit point at the welding point is observed, and after the aperture exit point, the main heater power is manually increased to below 5kW for crystal induction power for heating; further, the seed crystal aperture exit point is continued to be observed, and when it is determined that the crystal meets the conditions of four-point roundness and fullness, the main heater power is manually increased to the crystal induction power, and the temperature is stabilized for 10-15min, and then when the crystal point is observed to be round and full and rotates continuously for 2min, the crystal induction is started.

[0073] It can be seen that after the single crystal furnace is charged, manual welding, manual reheating and manual temperature adjustment are required. Especially in the process of manual temperature adjustment, relevant personnel need to pay close attention, and manual welding, manual reheating and other operations are also highly dependent on the skills of personnel. The whole process lacks automation, and the controllability of manual temperature adjustment is extremely poor. The man-machine ratio is also at a low level, resulting in poor operation efficiency and accuracy. This series of problems seriously affects the quality of work.

[0074] It should be noted that the temperature adjustment process of the single crystal furnace has a very weak reference to power in the furnace circulation section, which undoubtedly brings great difficulties to the operation.

[0075] In view of the above problems, the present application provides a single crystal furnace temperature control method, which can automatically perform temperature control after the single crystal furnace completes the temperature control operation, and at the same time, can automatically complete a series of operations such as seed crystal melting, temperature recovery and temperature stabilization. Specifically, after the temperature control of the single crystal furnace is completed, the temperature control is re-entered. Before the temperature adjustment, the liquid temperature offset is calculated with reference to the last seeding speed, and then the liquid temperature offset is adjusted based on the liquid temperature offset to correct the seeding liquid temperature. The purpose of this step is to adjust the liquid temperature appropriately before temperature adjustment to avoid the inappropriate liquid temperature due to the inaccurate automatic temperature recovery, resulting in waste of working hours; and then in the correction temperature After the temperature reaches the specified value, the seed crystal is controlled to descend to the liquid level of the seeding liquid for welding, and the diameter measurement is automatically turned on to obtain the welding diameter of the seed crystal. Then, according to the shrinkage size of the welding diameter, the appropriate temperature control strategy is selected to adjust the temperature of the seeding liquid. In this way, in terms of the power of the circulation section, the seeding liquid temperature can be corrected with reference to the last given seeding pulling speed, thereby effectively ensuring the stability and accuracy of the operation. The entire process is automated, which greatly reduces the dependence on personnel skills and makes it unnecessary for operators to have excessively high professional skills requirements, significantly improving production efficiency and greatly improving the man-machine ratio.

[0076] For example, Figure 2 A schematic diagram of an application scenario provided in an embodiment of the present application, such as Figure 2 As shown, the application scenario can be applied to the crystal generation process of a single crystal furnace, especially the temperature adjustment link. The application scenario includes: a single crystal furnace 203, a crystal rising system 202 and a display device 201 corresponding to the crystal rising system 202. The crystal rising system 202 is used to control the pulling speed, position and rotation speed of the crystal through the single crystal furnace 203 to ensure uniform growth and high quality of the crystal.

[0077] Among them, the single crystal furnace 203 includes a tungsten wire rope, a weight, a graphite chuck, a main heater and a crucible; there is a seeding liquid in the crucible; the seed crystal is installed in the graphite chuck, the graphite chuck is screwed on the weight, and the weight is hung on the end of the tungsten wire rope on the upper shaft; the main heater is used to provide thermal energy.

[0078] Exemplarily, after the single crystal furnace 203 has completed a series of operations such as feeding, wire breaking, shoulder breaking, and crystal cutting, the liquid temperature in the single crystal furnace 203 needs to be controlled at 1458-1462°C to re-enter temperature control. Therefore, before temperature control, the crystal rising system 202 needs to calibrate the seeding liquid temperature to 1458-1462°C.

[0079] Furthermore, after correcting the temperature, the crystal rising system 202 controls the seed crystal to automatically drop from the crystal position of 2500mm to 300mm in steps for preheating, and when it is confirmed that the furnace liquid temperature is at 1458-1462°C, the seed crystal is controlled to automatically drop to the liquid surface for melting, and the diameter measurement point is automatically opened to melt the seed crystal. For example, a charge-coupled device (CCD) camera can be used to capture the seed crystal in the picture, and the diameter capture line can be used to measure the melting diameter of the seed crystal, and then according to the size of the shrinking crystal of the melting diameter, a suitable temperature control strategy is selected to adjust the temperature of the seeding liquid.

[0080] Before adjusting the temperature, the crystal raising system 202 may calculate the liquid temperature offset with reference to the last seeding pulling speed, and then adjust the liquid temperature offset based on the liquid temperature offset to correct the seeding liquid temperature.

[0081] It should be noted that before the single crystal furnace is temperature adjusted for the first time, it is necessary to make sure that the seeding liquid temperature is at 1450±0.5℃ before automatic temperature adjustment can be performed. This liquid temperature of 1450±0.5℃ is the process standard seeding liquid temperature, which is designed to keep the liquid temperature in the furnace within the standard controllable range.

[0082] Optionally, the specialist can perform a series of selection operations on the display device 201 corresponding to the crystal rise system 202 to trigger the corresponding process, such as the specialist clicking the seed crystal welding step based on the display device of the crystal rise system. The embodiment of the present application does not specifically limit the process corresponding to the selection operation.

[0083] Optionally, the display device 201 corresponding to the crystal rise system 202 is also used to display the processing results, monitoring results and photographed pictures of each process, such as the crystal seeding liquid temperature can be displayed in real time for relevant specialists or operators to view.

[0084] The technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems are described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0085] Figure 3 A flow chart of a single crystal furnace temperature control method provided in an embodiment of the present application is shown in FIG. 1 , taking the crystal rise system as an example. Figure 3 As shown, the single crystal furnace temperature control method comprises the following steps:

[0086] S301. In response to a re-temperature adjustment instruction, the last seeding speed in the single crystal furnace is obtained.

[0087] In the embodiment of the present application, a series of operations such as completion of material addition, wire cutting, shoulder cutting, and crystal cutting in the single crystal furnace correspond to one cycle section. Before the next cycle section, the liquid temperature in the furnace needs to be controlled at 1458-1462°C in order to re-enter the temperature control.

[0088] Among them, before adjusting the temperature in the circulation section, you can check whether the seeding pulling speed after the last seeding meets the process standards. If not, you can adjust the liquid temperature offset based on the actual seeding pulling speed and the last adjustment. This step is actually to adjust the liquid temperature appropriately before temperature adjustment to avoid the liquid temperature not being able to automatically return to normal and waste of work time caused by inappropriate liquid temperature.

[0089] S302: after determining that the last seeding pulling speed does not meet the process standard requirements, calculate the liquid temperature offset in the single crystal furnace based on a preset algorithm and the last seeding pulling speed, and correct the seeding liquid temperature based on the liquid temperature offset.

[0090] In the embodiments of the present application, the process standard requirement is the 100mm pulling speed standard after seeding, such as the seeding pulling speed is 260-340mm / h. The 100mm pulling speed standard after seeding refers to the standard value or recommended value of the pulling speed adopted when the crystal grows to a length of 100 mm after seeding. This standard is usually determined based on experience and experimental data. The embodiments of the present application do not specifically limit the specific pulling speed values ​​corresponding to the process standard requirements.

[0091] It should be noted that since the thermal field inside the single crystal furnace is unstable after the first installation, the liquid temperature on the furnace table is uncertain. Therefore, after the first installation, it is necessary to re-determine the liquid temperature and verify that the seeding liquid temperature is at 1450±0.5℃ before automatic temperature adjustment. In this application, the liquid temperature offset is set to 0 before the first automatic temperature adjustment.

[0092] Optionally, calculating the liquid temperature offset in the single crystal furnace based on a preset algorithm and the last seeding pulling speed, and correcting the seeding liquid temperature based on the liquid temperature offset, including:

[0093] Based on the standard seeding pulling speed and the last seeding pulling speed, a liquid temperature offset in the single crystal furnace is calculated using a preset algorithm;

[0094] The seeding liquid temperature in the current single crystal furnace is obtained, and the seeding liquid temperature in the single crystal furnace is corrected using the liquid temperature offset to obtain a corrected liquid temperature.

[0095] In the embodiments of the present application, the standard seeding pulling speed refers to a pulling speed value set in advance that meets the requirements of the process standards. For example, the standard seeding pulling speed can be set to 340 mm / h. The embodiments of the present application do not limit the specific value corresponding to the standard seeding pulling speed, which can be any value that meets the requirements of the process standards.

[0096] Optionally, the formula corresponding to the preset algorithm is: liquid temperature offset = (standard seeding pull speed - last seeding pull speed) / 100, that is, 0.1 liquid temperature offset is equal to the difference of 10 seeding pull speeds, and the difference is standard seeding pull speed - last seeding pull speed. If the last seeding pull speed is high, the difference is negative, and accordingly, the liquid temperature offset is negative; if the last seeding pull speed is low, the difference is positive, and accordingly, the liquid temperature offset is positive.

[0097] For example, if the last seeding pulling speed was 390 mm / h, the liquid temperature offset before this temperature adjustment is calculated to be -0.5°C according to the preset algorithm. If the current seeding liquid temperature in the single crystal furnace is 1458.5°C, then after controlling the liquid temperature offset by 0.5°C, the seeding liquid temperature in the single crystal furnace can be corrected to 1458°C, that is, the temperature can be returned to 0.5°C in advance during temperature adjustment. In this way, the seeding pulling speed can be adjusted to between 260-340 mm / h to meet the process standard requirements.

[0098] Therefore, based on the above preset algorithm, the liquid temperature offset can be quickly calculated. The formula corresponding to the preset algorithm is simple and clear, easy to understand and apply, thereby improving the calculation processing efficiency.

[0099] It should be noted that the embodiments of the present application do not specifically limit the algorithm logic and formula corresponding to the preset algorithm. For example, the preset algorithm can also be liquid temperature offset = (standard seeding pull speed - last seeding pull speed) / 90. The preset algorithm is determined based on the actual application scenario requirements or test data.

[0100] In this way, correction based on the standard seeding pull speed and the previous seeding pull speed helps to maintain the consistency of the pull speed and ensure the repeatability of each seeding process. By correcting the liquid temperature offset, the temperature stability in the seeding process can be ensured, and the adverse effects of temperature fluctuations on crystal growth can be reduced. By calculating the liquid temperature offset using a preset algorithm and making corrections based on the offset, the accuracy of temperature control can be improved. By precisely controlling and correcting the seeding liquid temperature, the scrap rate in the crystal growth process can be reduced, production efficiency can be improved, crystal growth failures due to temperature instability can be reduced, and time and production costs can be saved.

[0101] S303, after the temperature is corrected, the seed crystal is controlled to descend to the liquid level of the seeding liquid, and the fusion diameter of the seed crystal is obtained.

[0102] In an embodiment of the present application, the welding diameter of the seed crystal can be obtained based on a preset method. The preset method may be a laser measurement method, an image processing method, a measuring tool measurement method, etc. For example, the image processing method may be a method for capturing a seed crystal image with a CCD camera and identifying the welding diameter in the seed crystal image. The embodiment of the present application does not limit the specific algorithm corresponding to the preset method; wherein, the welding diameter is the diameter of the seed crystal on the contact surface when the seed crystal contacts the molten silicon and begins to fuse.

[0103] Optionally, obtaining the welding diameter of the seed crystal includes:

[0104] After determining that the seed crystal drops to the liquid level, collecting a seed crystal image of the seed crystal;

[0105] The fusion diameter of the seed crystal in the seed crystal image is measured using a diameter capture line.

[0106] In the embodiment of the present application, the descent process of the seed crystal is monitored in real time by a sensor or a visual system to determine when the seed crystal drops to the liquid level of the molten silicon, and then a high-resolution camera or other image acquisition equipment is used to capture the image of the seed crystal on the liquid surface in real time.

[0107] Exemplarily, after preheating is completed, the seed crystal is controlled to automatically drop to the liquid surface for welding, and the diameter is automatically measured. The diameter measurement enables the CCD camera to capture the seed in the seed crystal image, and then the diameter capture line (tool) is used to measure the welding diameter of the seed crystal.

[0108] Among them, the welding diameter standard is greater than or equal to 12mm.

[0109] Therefore, the present application can accurately capture the fusion diameter of the seed crystal through high-resolution images and diameter capture line tools, ensuring high accuracy of the measurement results, and image processing and diameter measurement can be fully automated, reducing manual operations and improving measurement efficiency.

[0110] S304, determining a temperature adjustment strategy according to the welding diameter, and adjusting the seeding liquid temperature based on the temperature adjustment strategy.

[0111] In the embodiment of the present application, the temperature control strategy may refer to a strategy formulated in advance for controlling the temperature of a single crystal furnace for different welding diameters to ensure the stability and high quality of the single crystal silicon growth process. Different welding diameters correspond to different temperature control strategies. The embodiment of the present application does not specifically limit the temperature control strategy for different crystal shrinkage sizes. For example, the temperature control strategy can be determined based on the crystal shrinkage size of the welding diameter, where the crystal shrinkage size is the difference in the crystal diameter reduction between the necking stage and the shouldering stage.

[0112] Among them, the necking stage refers to the stage in which, after the seeding is completed, the temperature is lowered and the pulling speed is increased to make the seed crystal form a slender neck. The shouldering stage refers to the stage in which, after the necking is completed, the temperature is gradually increased and the pulling speed is adjusted to gradually expand the crystal from the thin neck to the target diameter.

[0113] Optionally, determining a temperature adjustment strategy according to the welding diameter, and adjusting the seeding liquid temperature based on the temperature adjustment strategy, including:

[0114] Obtaining the seeding power of the single crystal furnace, and judging whether the seed crystal is completely welded according to the shrinking size of the welding diameter;

[0115] When the shrinking size of the fusion diameter is within the first threshold interval, it is determined that the seed crystal is fused completely, and the power of the main heater is controlled to drop below the seeding power until the seeding liquid temperature drops to the standard temperature, and then the power of the main heater is gradually increased to the seeding power;

[0116] When the shrinkage size of the fusion diameter is within the second threshold interval, controlling the seed crystal to rise to the second crystal position, and controlling the power of the main heater to rise until the seeding liquid temperature reaches the correction temperature;

[0117] When the shrinkage size of the fusion diameter is within a third threshold interval, controlling the seed crystal to descend a preset distance, and controlling the power of the main heater to decrease until the seeding liquid temperature reaches a correction temperature;

[0118] The upper limit of the first threshold interval is the lower limit of the third threshold interval; and the lower limit of the first threshold interval is the upper limit of the second threshold interval.

[0119] In the embodiment of the present application, the first threshold interval, the second threshold interval and the third threshold interval are interval ranges determined based on experimental data. The embodiment of the present application does not limit the specific numerical intervals corresponding to the first threshold interval, the second threshold interval and the third threshold interval; optionally, the first threshold interval is (1, 2), that is, between 1mm-2mm, the second threshold interval is (0, 1), that is, less than 1mm, and the second threshold interval is (2, ∞), that is, greater than 2mm.

[0120] For example, when the size of the shrinking crystal is detected to be within 1-2mm, the crystal rise system determines that the welding is completed. At this time, the single crystal furnace is controlled to automatically reduce the power of the main heater to below 20kW of the seeding power for cooling. When the liquid temperature drops to 1454.5℃, the power of the main heater is gradually and automatically increased to the seeding power; when the size of the shrinking crystal is detected to be less than 1mm, the crystal rise system determines that the welding liquid temperature is too low to melt the seed crystal and eliminate dislocations. At this time, the crystal rise system controls the single crystal furnace to automatically lift the seed crystal to the crystal position 300 mm, and control the main heater power to automatically rise to 75kW for heating, until the liquid temperature reaches 1458-1462℃ for re-melting; when the detected shrinkage size is greater than 2mm, the crystal rise system determines that the melting liquid temperature is high. At this time, there may be a hidden danger of rod falling during the seed crystal melting process. Therefore, the current state can be maintained for 3 minutes, and the seed crystal can be controlled to automatically drop a preset distance, such as 3mm, and the main heater power can be controlled to decrease, until the liquid temperature reaches 1458-1462℃ for re-melting.

[0121] Among them, the preset distance is a suitable distance preset in advance, and the distance is determined through a large amount of test data. The preset distance can be modified, and the embodiment of the present application does not limit the specific value corresponding to the preset distance.

[0122] Therefore, by adjusting the power of the main heater according to the size of the crystal shrinkage of the fusion diameter, the temperature of the seeding liquid can be accurately controlled to ensure the stability and uniformity of crystal growth. Appropriate temperature control and adjustment help reduce dislocations and other defects in the crystal and improve the quality of the crystal. Since different temperature adjustment strategies are adopted in different threshold ranges, the temperature and pulling speed in the seeding process can be dynamically adjusted, and by real-time monitoring of the size of the crystal shrinkage of the fusion diameter, the heater power and seed crystal position can be adjusted in time to ensure the continuity and stability of crystal growth. This method can realize automatic control and reduce manual intervention, so that the automatic control of the crystal rise system can respond quickly and improve production efficiency.

[0123] Optionally, whether the seed crystal is completely welded can be directly determined based on the size of the welding diameter. For example, different welding diameters or welding diameter ranges corresponding to different temperature control strategies can be preset in advance. The embodiment of the present application does not specifically limit the prerequisites for selecting the temperature control strategy. The above is only an example.

[0124] Therefore, the embodiments of the present application calculate the liquid temperature offset and perform temperature correction using a preset algorithm, thereby ensuring precise control of the seeding liquid temperature, reducing the adverse effects of temperature fluctuations on crystal growth, and improving control accuracy. In the seeding process, the seeding liquid temperature is dynamically adjusted based on the real-time acquired fusion diameter and the previous seeding pulling speed to ensure the stability of the process. Precise temperature control and temperature adjustment strategies are then used to help reduce dislocations and other defects in the crystal and improve the quality of the crystal. The above method can achieve automated control, reduce operator intervention, improve operational efficiency, and has a wide range of applications.

[0125] Optionally, after the temperature is corrected, controlling the seed crystal to descend to the liquid level of the seeding liquid includes:

[0126] In response to the user's operation of the seed crystal lowering welding step, the seed crystal is controlled to be lowered from the first crystal position to the second crystal position in sequence based on the preset step time for preheating;

[0127] After the preheating is completed, the seed crystal is controlled to descend and melt, and a liquid surface contact voltage value is obtained, and it is determined whether the seed crystal has descended to the liquid surface according to the liquid surface contact voltage value;

[0128] When the liquid surface contact voltage value meets a preset threshold value, it is determined that the seed crystal has descended to the liquid surface of the seeding liquid.

[0129] In the embodiment of the present application, the preset step-by-step time refers to the length of the interval time at which different crystal positions stay, corresponding to the multiple interval times when the first crystal position drops step by step to the second crystal position. The embodiment of the present application does not specifically limit the number of distribution stages for the first crystal position to drop to the second crystal position. For example, it can be divided into 4 steps, and each step corresponds to a preset distribution time. The distribution stage and the preset distribution time are determined based on experimental data, and the embodiment of the present application does not specifically limit this.

[0130] It should be noted that before adjusting the temperature, it is necessary to confirm whether the voltage of the seed crystal in contact with the liquid surface meets the preset threshold value to determine whether the seed crystal is in contact with the liquid surface; wherein, the preset threshold value is usually set to 0.1V, which is the voltage value corresponding to the seed crystal in contact with the liquid surface. If it does not contact the liquid surface, the corresponding voltage value is 3V. The embodiment of the present application does not specifically limit the size of the preset threshold value, which is determined based on experimental data.

[0131] Exemplarily, after the specialist clicks on the seed crystal welding step based on the display device of the Jingsheng system, the Jingsheng system controls the seed crystal to automatically drop from the crystal position of 2500mm to 300mm in steps for preheating, and confirms whether the furnace liquid temperature is at 1458-1462°C before adjusting the temperature; if so, the seed crystal can be controlled to be at the crystal position of 2500mm-1200mm-800mm-500mm-300mm in sequence, with intervals of 2-8-5-5 respectively, and slowly dropped to the liquid surface for preheating, and after the preheating is completed, the seed crystal is controlled to drop to the liquid surface for welding; wherein, preheating the seed crystal can reduce the thermal stress of the seed crystal in a high temperature environment, thereby improving the stability of the seed crystal and avoiding increased cracking or dislocation of the seed crystal due to temperature gradient during the growth process.

[0132] It can be understood that the users mentioned in the embodiments of the present application refer to specialists, operators or related personnel.

[0133] Therefore, the embodiment of the present application can accurately control the welding process of the seed crystal through step-by-step preheating and monitoring of the liquid surface contact voltage value, thereby ensuring the stability and uniformity of crystal growth. Specifically, through step-by-step preheating, it is possible to gradually adapt to temperature changes, reduce the impact of sudden temperature changes on the seed crystal and molten silicon, and ensure the stability of the process; through real-time monitoring of the liquid surface contact voltage value, it is possible to promptly determine whether the seed crystal has dropped to the liquid surface, thereby ensuring the continuity and stability of the welding process.

[0134] Optionally, the method further includes:

[0135] After determining that the temperature of the seeding liquid reaches the correction temperature, the seed crystal is controlled to perform the welding operation again.

[0136] In some embodiments, if the detected shrinkage size is less than 1 mm, the crystal lifting system controls the single crystal furnace to automatically lift the seed crystal to 300 mm from the crystal position, and controls the main heater power to automatically rise to 75 kW for heating. After the liquid temperature reaches 1458-1462°C, the seed crystal is controlled to re-melt.

[0137] In other embodiments, if the detected shrinkage size is greater than 2 mm, the crystal rise system controls the seed crystal to automatically descend a preset distance, and controls the main heater power to decrease, and after the liquid temperature reaches 1458-1462°C, controls the seed crystal to re-perform the welding operation.

[0138] Therefore, in the embodiment of the present application, the welding operation is performed only after determining that the temperature of the seeding liquid has reached the correction level, which can ensure the temperature stability of the welding process, thereby optimizing the welding process of the seed crystal and the molten silicon, and reducing defects and stresses in the crystal. The stable temperature helps to reduce the thermal stress between the seed crystal and the molten silicon, and avoid defects and stress concentration caused by sudden temperature changes.

[0139] Optionally, the method further includes:

[0140] After adjusting the temperature of the seeding liquid based on the temperature adjustment strategy, obtaining the liquid temperature in the single crystal furnace;

[0141] When it is determined that the liquid temperature is at a preset temperature, controlling the liquid temperature to maintain at the preset temperature for a preset time, and acquiring a crystal image;

[0142] After determining that four crystal points of the crystal are full and round based on the crystal image, the single crystal furnace is controlled to enter the seeding step.

[0143] In the embodiments of the present application, the operation of controlling the liquid temperature to maintain a preset temperature for a preset time refers to a temperature stabilization process, wherein the preset temperature is to ensure that the seed crystal and the molten silicon are at a temperature corresponding to stable welding, and the preset time is to reduce the temperature gradient and ensure uniform growth of the crystal. During the seeding process, the temperature stabilization time is usually several minutes to several tens of minutes; for example, during the temperature stabilization process, the temperature can be controlled between 1458-1462°C and last for 15 minutes. The specific preset temperature and preset time can be set according to the process requirements, and the embodiments of the present application do not specifically limit the preset temperature and preset time.

[0144] Optionally, when it is determined that the liquid temperature is at a preset temperature and the liquid temperature is controlled to maintain at the preset temperature for a preset time, the crystal rising system can pop up a window to prompt the specialist to confirm the crystal seeding. After the specialist confirms that the four points of the crystal are full and round, the crystal seeding step is entered in response to the specialist's confirmation operation. Therefore, the present application can also prompt for confirmation in time before crystal seeding and perform crystal seeding after the specialist confirms.

[0145] Among them, the pop-up prompt can be displayed on the display device of the Jingsheng system. The embodiment of the present application does not specifically limit the content and form of the pop-up prompt, and can refer to the existing related technology.

[0146] Optionally, obtaining a crystal image includes at least one of the following: obtaining a crystal image through an image sensor and a processing system; obtaining a crystal image through laser scanning; obtaining a crystal image through an infrared camera; and automatically obtaining a crystal image using a variety of sensors and image processing algorithms.

[0147] Therefore, after determining that the liquid temperature is at a preset temperature, the embodiment of the present application maintains the preset time to ensure the temperature stability of the welding process, and by acquiring and analyzing the crystal image, the growth state of the crystal can be accurately determined. By determining that the four points of the crystal are full and round, it can be ensured that the initial growth conditions of the crystal are good and defects in the subsequent growth process can be reduced.

[0148] In combination with the above embodiments, Figure 4 A schematic flow chart of an optional single crystal furnace temperature control method provided in an embodiment of the present application, such as Figure 4 As shown, the single crystal furnace temperature control method includes the following steps:

[0149] Step A: After the temperature control of the single crystal furnace is completed, the crystal rise system corrects the seeding liquid temperature to 1458-1462°C based on the liquid temperature offset, wherein the first automatic temperature control furnace liquid temperature offset is set to 0, and the second and subsequent liquid temperature offsets are determined according to the formula liquid temperature offset = (standard seeding pull speed - last seeding pull speed) / 100.

[0150] Step B: When the furnace displays that the liquid temperature is 1458-1462°C, click the seed crystal welding step. After the seed crystal automatically descends and preheating is completed, the seed crystal is automatically lowered for welding, and the liquid surface contact voltage is used to determine whether the seed crystal has dropped to the liquid level.

[0151] Step C: After determining that the seed crystal has dropped to the liquid level for welding, the diameter capture is automatically turned on. When the seed crystal is detected to shrink to 1-2mm, it is determined that the welding is completed. Then, through parameter setting, the power of the main heater is automatically reduced to below 20kW for seeding power to cool down.

[0152] Step D: When the liquid temperature on the furnace table drops to 1454.5℃, the main heater power is automatically and gradually increased to the seeding power according to the liquid temperature cooling speed displayed in the furnace. When the liquid temperature display value in the furnace is 1450±0.5℃, a pop-up window will prompt whether the specialist can enter the seeding prompt. After the specialist confirms that the crystal point is round and full, seeding can be carried out.

[0153] In the above embodiments, the temperature control method of the single crystal furnace provided in the embodiments of the present application is introduced. In order to realize the functions in the method provided in the embodiments of the present application, the electronic device as the execution subject may include a hardware structure and / or a software module, and realize the above functions in the form of a hardware structure, a software module, or a hardware structure plus a software module. Whether one of the above functions is executed in the form of a hardware structure, a software module, or a hardware structure plus a software module depends on the specific application and design constraints of the technical solution.

[0154] For example, Figure 5 A schematic diagram of a temperature control device for a single crystal furnace provided in an embodiment of the present application is shown in FIG. Figure 5 As shown, the device includes: an acquisition module 501, which is used to obtain the last seeding speed in the single crystal furnace in response to the instruction of re-temperature adjustment;

[0155] A correction module 502 is used to calculate the liquid temperature offset in the single crystal furnace based on a preset algorithm and the last seeding speed after determining that the last seeding speed does not meet the process standard requirements, and correct the seeding liquid temperature based on the liquid temperature offset;

[0156] A control module 503 is used to control the seed crystal to descend to the liquid level of the seeding liquid after the temperature is corrected, and obtain the fusion diameter of the seed crystal;

[0157] The adjustment module 504 is used to determine a temperature adjustment strategy according to the welding diameter, and adjust the seeding liquid temperature based on the temperature adjustment strategy.

[0158] Optionally, the correction module 502 is specifically configured to:

[0159] Based on the standard seeding pulling speed and the last seeding pulling speed, a liquid temperature offset in the single crystal furnace is calculated using a preset algorithm;

[0160] The seeding liquid temperature in the current single crystal furnace is obtained, and the seeding liquid temperature in the single crystal furnace is corrected using the liquid temperature offset to obtain a corrected liquid temperature.

[0161] Optionally, the formula corresponding to the preset algorithm is: liquid temperature offset = (standard seeding pulling speed - previous seeding pulling speed) / 100.

[0162] Optionally, the control module 503 includes a control unit and an acquisition unit; the control unit is used to:

[0163] In response to the user's operation of the seed crystal lowering welding step, the seed crystal is controlled to be lowered from the first crystal position to the second crystal position in sequence based on the preset step time for preheating;

[0164] After the preheating is completed, the seed crystal is controlled to descend and melt, and a liquid surface contact voltage value is obtained, and it is determined whether the seed crystal has descended to the liquid surface according to the liquid surface contact voltage value;

[0165] When the liquid surface contact voltage value meets a preset threshold value, it is determined that the seed crystal has descended to the liquid surface of the seeding liquid.

[0166] Optionally, the acquiring unit is used to:

[0167] After determining that the seed crystal drops to the liquid level, collecting a seed crystal image of the seed crystal;

[0168] The fusion diameter of the seed crystal in the seed crystal image is measured using a diameter capture line.

[0169] Optionally, the adjustment module 504 is specifically configured to:

[0170] Obtaining the seeding power of the single crystal furnace, and judging whether the seed crystal is completely welded according to the shrinking size of the welding diameter;

[0171] When the shrinking size of the fusion diameter is within the first threshold interval, it is determined that the seed crystal is fused completely, and the power of the main heater is controlled to drop below the seeding power until the seeding liquid temperature drops to the standard temperature, and then the power of the main heater is gradually increased to the seeding power;

[0172] When the shrinkage size of the fusion diameter is within the second threshold interval, controlling the seed crystal to rise to the second crystal position, and controlling the power of the main heater to rise until the seeding liquid temperature reaches the correction temperature;

[0173] When the shrinkage size of the fusion diameter is within a third threshold interval, controlling the seed crystal to descend a preset distance, and controlling the power of the main heater to decrease until the seeding liquid temperature reaches a correction temperature;

[0174] The upper limit of the first threshold interval is the lower limit of the third threshold interval; and the lower limit of the first threshold interval is the upper limit of the second threshold interval.

[0175] Optionally, the device further includes a determining module, wherein the determining module is configured to:

[0176] After determining that the temperature of the seeding liquid reaches the correction temperature, the seed crystal is controlled to perform the welding operation again.

[0177] Optionally, the device further comprises a seeding module, wherein the seeding module is used to:

[0178] After adjusting the temperature of the seeding liquid based on the temperature adjustment strategy, obtaining the liquid temperature in the single crystal furnace;

[0179] When it is determined that the liquid temperature is at a preset temperature, controlling the liquid temperature to maintain at the preset temperature for a preset time, and acquiring a crystal image;

[0180] After determining that four crystal points of the crystal are full and round based on the crystal image, the single crystal furnace is controlled to enter the seeding step.

[0181] It should be noted that the specific implementation principle and effects of the above-mentioned single crystal furnace temperature control device can be found in the relevant descriptions and effects corresponding to the above-mentioned embodiments, and will not be elaborated here.

[0182] The present application also provides a schematic diagram of the structure of an electronic device. Figure 6 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application is shown in FIG. Figure 6 As shown, the electronic device may include: a processor 601 and a memory 602 that is communicatively connected to the processor; the memory 602 stores a computer program; the processor 601 executes the computer program stored in the memory 602, so that the processor 601 executes the method described in any of the above embodiments.

[0183] The memory 602 and the processor 601 may be connected via a bus 603 .

[0184] An embodiment of the present application further provides a computer-readable storage medium, which stores computer-executable instructions. When the computer-executable instructions are executed by a processor, they are used to implement the method described in any of the aforementioned embodiments of the present application.

[0185] An embodiment of the present application further provides a chip for executing instructions, wherein the chip is used to execute the method described in any of the aforementioned embodiments as executed by an electronic device in any of the aforementioned embodiments of the present application.

[0186] An embodiment of the present application further provides a computer program product, which includes a computer program. When the computer program is executed by a processor, the method described in any of the aforementioned embodiments of the present application executed by an electronic device can be implemented.

[0187] In the several embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of modules is only a logical function division. There may be other division methods in actual implementation, such as multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or modules, which can be electrical, mechanical or other forms.

[0188] The modules described as separate components may or may not be physically separated, and the components shown as modules may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the modules may be selected according to actual needs to implement the solution of this embodiment.

[0189] In addition, each functional module in each embodiment of the present application can be integrated into one processing unit, or each module can exist physically separately, or two or more modules can be integrated into one unit. The above-mentioned module-composed unit can be implemented in the form of hardware or in the form of hardware plus software functional units.

[0190] The above-mentioned integrated module implemented in the form of a software function module can be stored in a computer-readable storage medium. The above-mentioned software function module is stored in a storage medium, including a number of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) or a processor to perform some steps of the method described in each embodiment of the present application.

[0191] It should be understood that the processor may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), etc. A general-purpose processor may be a microprocessor or any conventional processor. The steps of the method disclosed in the application may be directly implemented as being executed by a hardware processor, or may be implemented by a combination of hardware and software modules in the processor.

[0192] The memory may include high-speed random access memory (RAM), and may also include non-volatile memory (NVM), such as at least one disk storage, and may also be a USB flash drive, a mobile hard disk, a read-only memory, a disk or an optical disk, etc.

[0193] The bus may be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, the bus in the drawings of the present application is not limited to only one bus or one type of bus.

[0194] The above storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk. The storage medium can be any available medium that can be accessed by a general or special computer.

[0195] An exemplary storage medium is coupled to a processor so that the processor can read information from the storage medium and write information to the storage medium. Of course, the storage medium can also be a component of the processor. The processor and the storage medium can be located in an application specific integrated circuit (ASIC). Of course, the processor and the storage medium can also exist as discrete components in an electronic device or a main control device.

[0196] It should be noted that, for the aforementioned method embodiments, for the sake of simplicity, they are all expressed as a series of action combinations, but those skilled in the art should be aware that the present application is not limited by the described order of actions, because according to the present application, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all optional embodiments, and the actions and modules involved are not necessarily required by the present application.

[0197] It should be further noted that, although the various steps in the flowchart are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless there is a clear description in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowchart may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these sub-steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.

[0198] In the above embodiments, the description of each embodiment has its own emphasis. For the part not described in detail in a certain embodiment, please refer to the relevant description of other embodiments. The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0199] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the invention disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary techniques in the art that are not disclosed in the present application. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present application are indicated by the claims.

[0200] The above is only a specific implementation of the embodiment of the present application, but the protection scope of the embodiment of the present application is not limited thereto, and any changes or replacements within the technical scope disclosed in the embodiment of the present application should be included in the protection scope of the embodiment of the present application. Therefore, the protection scope of the embodiment of the present application should be based on the protection scope of the claims.

Claims

1. A single crystal furnace temperature control method, characterized in that: The method comprises: In response to a re-temperature adjustment instruction, obtaining the last seeding speed in the single crystal furnace; After determining that the last seeding pulling speed does not meet the process standard requirements, calculating the liquid temperature offset in the single crystal furnace based on a preset algorithm and the last seeding pulling speed, and correcting the seeding liquid temperature based on the liquid temperature offset; After the temperature is corrected, the seed crystal is controlled to descend to the liquid level of the seeding liquid, and the fusion diameter of the seed crystal is obtained; A temperature adjustment strategy is determined according to the welding diameter, and the seeding liquid temperature is adjusted based on the temperature adjustment strategy.

2. The method according to claim 1, characterized in that: The method comprises: calculating the liquid temperature offset in the single crystal furnace based on a preset algorithm and the last seeding speed, and correcting the seeding liquid temperature based on the liquid temperature offset, including: Based on the standard seeding pulling speed and the last seeding pulling speed, a liquid temperature offset in the single crystal furnace is calculated using a preset algorithm; The seeding liquid temperature in the current single crystal furnace is obtained, and the seeding liquid temperature in the single crystal furnace is corrected using the liquid temperature offset to obtain a corrected liquid temperature.

3. The method according to claim 2, characterized in that The formula corresponding to the preset algorithm is: liquid temperature offset = (standard seeding speed - last seeding speed) / 100.

4. The method according to claim 1, characterized in that: After the temperature is corrected, the seed crystal is controlled to descend to the liquid level of the seeding liquid, including: In response to the user's operation of the seed crystal lowering welding step, the seed crystal is controlled to be lowered from the first crystal position to the second crystal position in sequence based on the preset step time for preheating; After the preheating is completed, the seed crystal is controlled to descend and melt, and a liquid surface contact voltage value is obtained, and it is determined whether the seed crystal has descended to the liquid surface according to the liquid surface contact voltage value; When the liquid surface contact voltage value meets a preset threshold value, it is determined that the seed crystal has descended to the liquid surface of the seeding liquid.

5. The method according to claim 1, characterized in that Obtaining the fusion diameter of the seed crystal, comprising: After determining that the seed crystal drops to the liquid level, collecting a seed crystal image of the seed crystal; The fusion diameter of the seed crystal in the seed crystal image is measured using a diameter capture line.

6. The method according to claim 1, characterized in that Determining a temperature adjustment strategy according to the welding diameter, and adjusting the temperature of the seeding liquid based on the temperature adjustment strategy, including: Obtaining the seeding power of the single crystal furnace, and judging whether the seed crystal is completely welded according to the shrinking size of the welding diameter; When the shrinking size of the fusion diameter is within the first threshold interval, it is determined that the seed crystal is fused completely, and the power of the main heater is controlled to drop below the seeding power until the seeding liquid temperature drops to the standard temperature, and then the power of the main heater is gradually increased to the seeding power; When the shrinkage size of the fusion diameter is within the second threshold interval, controlling the seed crystal to rise to the second crystal position, and controlling the power of the main heater to rise until the seeding liquid temperature reaches the correction temperature; When the shrinkage size of the fusion diameter is within a third threshold interval, controlling the seed crystal to descend a preset distance, and controlling the power of the main heater to decrease until the seeding liquid temperature reaches a correction temperature; The upper limit of the first threshold interval is the lower limit of the third threshold interval; and the lower limit of the first threshold interval is the upper limit of the second threshold interval.

7. The method according to claim 6, characterized in that The method further comprises: After determining that the temperature of the seeding liquid reaches the correction temperature, the seed crystal is controlled to perform the welding operation again.

8. The method according to any one of claims 1 to 7, characterized in that: The method further comprises: After adjusting the temperature of the seeding liquid based on the temperature adjustment strategy, obtaining the liquid temperature in the single crystal furnace; When it is determined that the liquid temperature is at a preset temperature, controlling the liquid temperature to maintain at the preset temperature for a preset time, and acquiring a crystal image; After determining that four crystal points of the crystal are full and round based on the crystal image, the single crystal furnace is controlled to enter the seeding step.

9. A single crystal furnace temperature control device, characterized in that: The device comprises: An acquisition module, used for acquiring the last seeding speed in the single crystal furnace in response to a re-temperature adjustment instruction; A correction module, for calculating the liquid temperature offset in the single crystal furnace based on a preset algorithm and the last seeding speed after determining that the last seeding speed does not meet the process standard requirements, and correcting the seeding liquid temperature based on the liquid temperature offset; A control module, used for controlling the seed crystal to descend to the liquid level of the seeding liquid after the temperature is corrected, and obtaining the fusion diameter of the seed crystal; An adjustment module is used to determine a temperature adjustment strategy according to the welding diameter, and adjust the temperature of the seeding liquid based on the temperature adjustment strategy.

10. An electronic device, characterized in that: include: A processor, and a memory communicatively connected to the processor; The memory stores computer-executable instructions; The processor executes the computer-executable instructions stored in the memory to implement the method according to any one of claims 1 to 8.

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