Electromagnetic shielding self-cleaning structural color fabric and preparation method thereof

Abstract

The invention relates to the technical field of structural color fabrics, in particular to an electromagnetic shielding self-cleaning structural color fabric and a preparation method thereof.The preparation method comprises the steps that a PET fabric serves as a substrate, an Ag film, a TiO2 film and a SiO2 film are sequentially deposited on the PET fabric through a radio frequency magnetron sputtering method, and the electromagnetic shielding self-cleaning structural color fabric is obtained; the obtained electromagnetic shielding self-cleaning structural color fabric can obtain multiple colors according to different preparation parameters and has good electromagnetic shielding performance and self-cleaning performance, and the design of the electromagnetic shielding fabric can reduce diffusion of electromagnetic radiation, alleviate the influence of electromagnetic radiation pollution on the environment and protect the health of the ecological environment.

Description

Technical Field

[0001] The invention relates to the technical field of structural color fabrics, and in particular to an electromagnetic shielding self-cleaning structural color fabric and a preparation method thereof. Background Art

[0002] The textile industry is a basic industry of my country's national economy. The stable development of the textile industry has promoted the sustained growth of the printing and dyeing industry and greatly increased the demand for dyes. Textile printing and dyeing usually brings environmental problems such as energy consumption and printing and dyeing wastewater discharge. Traditional dyeing processes are characterized by high energy consumption, serious pollution, and water shortage. The development of ecological dyeing processes and the research of new dyeing methods have become one of the hot topics.

[0003] Structural colors have high saturation, high brightness and iridescence effect, and will never fade if the microstructure that forms the structural color is not destroyed. The development of fibers and fabrics using structural dyeing is of great significance in reducing the pollution caused by traditional printing and dyeing processes.

[0004] In modern society, we are often faced with various electromagnetic radiations from electronic devices, communication networks, etc., as well as the breeding and spread of bacteria, mold and other microorganisms. While the existing structural color fabrics have a variety of colors, they do not have good electromagnetic shielding and self-cleaning properties. Summary of the invention

[0005] In view of this, the purpose of the present invention is to propose an electromagnetic shielding self-cleaning structural color fabric and a preparation method thereof, so as to solve the problem that the existing structural color fabrics have various colors but do not have good electromagnetic shielding performance and self-cleaning performance.

[0006] Based on the above purpose, the present invention provides a method for preparing an electromagnetic shielding self-cleaning structural color fabric. The preparation method is to use PET fabric as a substrate, and adopt a radio frequency magnetron sputtering method to sequentially deposit an Ag film, a TiO2 film and a SiO2 film on the PET fabric to obtain an electromagnetic shielding self-cleaning structural color fabric.

[0007] Preferably, the preparation method comprises the following steps:

[0008] Step 1: Take the PET fabric, remove dust and impurities, dry it, and place it in a dry environment for use;

[0009] Step 2: Take the PET fabric from step 1, fix it on the sample stage of the magnetron sputtering instrument, turn on the mechanical pump, and draw the vacuum to 8*10 -4 Pa;

[0010] Step 3: After the vacuum extraction is completed, open the argon valve, pass argon into the vacuum chamber of the magnetron sputtering instrument, turn the plug valve, adjust the vacuum chamber pressure to 1Pa displayed on the vacuum gauge resistance gauge unit, open the Ag target baffle, turn on the DC power supply, sputter and deposit the Ag film, set the sputtering time to 15-25min, the sputtering power to 45-55W, wait for the sputtering to be completed, turn off the DC power supply, and close the Ag baffle;

[0011] Step 4: Open the TiO2 baffle, turn on the RF power supply, sputter and deposit the TiO2 film, set the sputtering pressure to 0.5 Pa, wait for the sputtering to be completed, turn off the RF power supply, and close the TiO2 baffle;

[0012] Step 5: Open the SiO2 baffle, turn on the RF power supply, sputter deposit SiO2 film, set the sputtering pressure to 0.5Pa, the sputtering time to 15-25min, and the sputtering power to 95-105W. After waiting for the sputtering to be completed, turn off the RF power supply, close the SiO2 baffle, and close the magnetron sputtering instrument to obtain the electromagnetic shielding self-cleaning structural color fabric.

[0013] Preferably, in step 1, the dust and impurities are removed by placing the PET fabric in anhydrous ethanol and deionized water for ultrasonic cleaning for 15-25 minutes each.

[0014] Preferably, the drying temperature in step 1 is 60° C. and the drying time is 28-32 min.

[0015] Preferably, the purity of the argon gas introduced into the magnetron sputtering apparatus in step three is 99.99%, and the argon gas flow rate is 30 sccm.

[0016] Preferably, in the step three, the target-substrate distance between the Ag target and the sample stage is 4 cm, and the sample stage rotation speed is 20-30 r / min; in the step four, the target-substrate distance between the TiO2 target and the sample stage is 4 cm, and the sample stage rotation speed is 30-50 r / min; in the step five, the target-substrate distance between the SiO2 target and the sample stage is 4 cm, and the sample stage rotation speed is 10-20 r / min.

[0017] Preferably, in step 4, the sputtering time is 10 to 50 minutes, and the sputtering power is 30 to 100W.

[0018] Preferably, the sputtering processes in step three, step four and step five occur in the same vacuum chamber, and the sputtering time is continuous.

[0019] The present invention also provides an electromagnetic shielding self-cleaning structural color fabric, which is obtained by a preparation method of the electromagnetic shielding self-cleaning structural color fabric.

[0020] Beneficial effects of the present invention:

[0021] 1. Structural colors have high saturation, high brightness and iridescence effect. If the microstructure that forms the structural color is not destroyed, the structural color will never fade. The use of structural dyeing to develop fabrics is of great significance in reducing the pollution caused by traditional printing and dyeing processes.

[0022] 2. The design of electromagnetic shielding fabrics can prevent electromagnetic waves from harming the human body to a certain extent and protect our health. Electromagnetic radiation can interfere with and damage the normal operation of electronic equipment, and have a negative impact on the performance and reliability of electronic equipment, communication equipment, sensors, etc. The design of electromagnetic shielding fabrics can block the interference of external electromagnetic waves and ensure the normal operation of equipment. In some application fields that require high reliability, such as military, aerospace, medical equipment, etc., it is very important to use electromagnetic shielding fabrics. The development of modern communication technology has brought about the risk of leakage of personal privacy and confidential information. The design of electromagnetic shielding fabrics can prevent the leakage and eavesdropping of electromagnetic waves and improve the security of information. The design of electromagnetic shielding fabrics can reduce the spread of electromagnetic radiation, slow down the impact of electromagnetic radiation pollution on the environment, and protect the health of the ecological environment.

[0023] 3. Self-cleaning fabrics can automatically remove excess dirt, reducing the labor and time costs of daily cleaning. For places where this material is used in large areas, such as building exterior walls, home textiles, etc., it can significantly reduce maintenance costs. Self-cleaning fabrics reduce the growth and spread of bacteria, mold and other microorganisms, thereby improving the sanitary environment. The use of self-cleaning fabrics in places with high hygiene requirements, such as the medical and food industries, helps prevent the spread of germs and food contamination. Self-cleaning fabrics can reduce the erosion and damage to the material by stains and sediments, thereby extending the service life of the fabric. This is especially important for items that need to be cleaned frequently, such as high-end furniture, car interior decoration and clothing, making them more durable and reliable. Self-cleaning fabrics can reduce the use of detergents and water waste, helping to reduce pollution to the environment. In addition, the self-cleaning ability of self-cleaning fabrics can also reduce energy consumption because the frequency and intensity of cleaning are lower, thereby reducing energy consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only for the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 This is a SEM image of the electromagnetic shielding self-cleaning structural color fabric prepared in Example 1 of the present invention;

[0026] Figure 2 This is a photocatalytic performance diagram prepared in Example 1 of the present invention;

[0027] Figure 3 This is a diagram of the electromagnetic shielding effectiveness prepared in Example 1 of the present invention. DETAILED DESCRIPTION

[0028] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments.

[0029] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the present invention should be understood by people with ordinary skills in the field to which the present invention belongs. The "first", "second" and similar words used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0030] Example 1

[0031] Step 1: Cut a PET fabric with a diameter of 10 cm, place it in anhydrous ethanol and deionized water for ultrasonic cleaning for 20 minutes each, and then place the flexible PI film in a 60°C oven for drying for 30 minutes to remove the residual liquid of anhydrous ethanol and deionized water;

[0032] Step 2: Take the PET fabric from step 1, fix it on the sample stage of the magnetron sputtering instrument, turn on the mechanical pump, draw vacuum until the vacuum gauge resistance gauge unit shows 20Pa, then turn on the solenoid valve and molecular pump, continue to draw high vacuum until the vacuum gauge ionization gauge unit shows 8*10 -4 Pa;

[0033] Step 3: After the vacuum extraction is completed, open the argon valve, and pass argon with a purity of 99.99% into the vacuum chamber of the magnetron sputtering instrument. Set the argon flow rate to 30sccm, turn the gate valve, adjust the vacuum chamber pressure to 1Pa displayed on the vacuum gauge resistance gauge unit, open the Ag target baffle, the target-substrate distance between the Ag target and the sample stage is 4cm, the sample stage speed is 25r / min, turn on the DC power supply, sputter-deposit the Ag film, set the sputtering pressure to 1Pa, the sputtering time to 20min, the sputtering power to 50W, wait for the sputtering to be completed, turn off the DC power supply, and close the Ag baffle;

[0034] Step 4: Open the TiO2 baffle, set the target-substrate distance between the TiO2 target and the sample stage to 4 cm, set the sample stage speed to 40 r / min, turn on the RF power supply, sputter and deposit the TiO2 film, set the sputtering pressure to 0.5 Pa, the sputtering time to 10 min, and the sputtering power to 50 W. After the sputtering is completed, turn off the RF power supply and close the TiO2 baffle;

[0035] Step 5: Open the SiO2 baffle, the target-substrate distance between the SiO2 target and the sample stage is 4 cm, the sample stage rotation speed is 10 r / min, turn on the RF power supply, sputter deposit SiO2 film, set the sputtering gas pressure to 0.5 Pa, the sputtering time to 20 min, the sputtering power to 100 W, wait for the sputtering to be completed, turn off the RF power supply, close the SiO2 baffle, turn off the magnetron sputtering instrument, and obtain the electromagnetic shielding self-cleaning structural color fabric.

[0036] Example 2

[0037] Step 1: Cut a PET fabric with a diameter of 10 cm, place it in anhydrous ethanol and deionized water for ultrasonic cleaning for 20 minutes each, and then place the flexible PI film in a 60°C oven for drying for 30 minutes to remove the residual liquid of anhydrous ethanol and deionized water;

[0038] Step 2: Take the PET fabric from step 1, fix it on the sample stage of the magnetron sputtering instrument, turn on the mechanical pump, draw vacuum until the vacuum gauge resistance gauge unit shows 20Pa, then turn on the solenoid valve and molecular pump, continue to draw high vacuum until the vacuum gauge ionization gauge unit shows 8*10 -4 Pa;

[0039] Step 3: After the vacuum extraction is completed, open the argon valve, and pass argon with a purity of 99.99% into the vacuum chamber of the magnetron sputtering instrument. Set the argon flow rate to 30sccm, turn the gate valve, adjust the vacuum chamber pressure to 1Pa displayed on the vacuum gauge resistance gauge unit, open the Ag target baffle, the target-substrate distance between the Ag target and the sample stage is 4cm, the sample stage speed is 25r / min, turn on the DC power supply, sputter-deposit the Ag film, set the sputtering pressure to 1Pa, the sputtering time to 20min, the sputtering power to 50W, wait for the sputtering to be completed, turn off the DC power supply, and close the Ag baffle;

[0040] Step 4: Open the TiO2 baffle, set the target-substrate distance between the TiO2 target and the sample stage to 4 cm, set the sample stage speed to 40 r / min, turn on the RF power supply, sputter and deposit the TiO2 film, set the sputtering pressure to 0.5 Pa, the sputtering time to 30 min, and the sputtering power to 50 W. After the sputtering is completed, turn off the RF power supply and close the TiO2 baffle;

[0041] Step 5: Open the SiO2 baffle, the target-substrate distance between the SiO2 target and the sample stage is 4 cm, the sample stage rotation speed is 10 r / min, turn on the RF power supply, sputter deposit SiO2 film, set the sputtering gas pressure to 0.5 Pa, the sputtering time to 20 min, the sputtering power to 100 W, wait for the sputtering to be completed, turn off the RF power supply, close the SiO2 baffle, turn off the magnetron sputtering instrument, and obtain the electromagnetic shielding self-cleaning structural color fabric.

[0042] Example 3

[0043] Step 1: Cut a PET fabric with a diameter of 10 cm, place it in anhydrous ethanol and deionized water for ultrasonic cleaning for 20 minutes each, and then place the flexible PI film in a 60°C oven for drying for 30 minutes to remove the residual liquid of anhydrous ethanol and deionized water;

[0044] Step 2: Take the PET fabric from step 1, fix it on the sample stage of the magnetron sputtering instrument, turn on the mechanical pump, draw vacuum until the vacuum gauge resistance gauge unit shows 20Pa, then turn on the solenoid valve and molecular pump, continue to draw high vacuum until the vacuum gauge ionization gauge unit shows 8*10 -4 Pa;

[0045] Step 3: After the vacuum extraction is completed, open the argon valve, and pass argon with a purity of 99.99% into the vacuum chamber of the magnetron sputtering instrument. Set the argon flow rate to 30sccm, turn the gate valve, adjust the vacuum chamber pressure to 1Pa displayed on the vacuum gauge resistance gauge unit, open the Ag target baffle, the target-substrate distance between the Ag target and the sample stage is 4cm, the sample stage speed is 25r / min, turn on the DC power supply, sputter-deposit the Ag film, set the sputtering pressure to 1Pa, the sputtering time to 20min, the sputtering power to 50W, wait for the sputtering to be completed, turn off the DC power supply, and close the Ag baffle;

[0046] Step 4: Open the TiO2 baffle, set the target-substrate distance between the TiO2 target and the sample stage to 4 cm, set the sample stage speed to 40 r / min, turn on the RF power supply, sputter and deposit the TiO2 film, set the sputtering pressure to 0.5 Pa, the sputtering time to 50 min, and the sputtering power to 50 W. After the sputtering is completed, turn off the RF power supply and close the TiO2 baffle;

[0047] Step 5: Open the SiO2 baffle, the target-substrate distance between the SiO2 target and the sample stage is 4 cm, the sample stage rotation speed is 10 r / min, turn on the RF power supply, sputter deposit SiO2 film, set the sputtering gas pressure to 0.5 Pa, the sputtering time to 20 min, the sputtering power to 100 W, wait for the sputtering to be completed, turn off the RF power supply, close the SiO2 baffle, turn off the magnetron sputtering instrument, and obtain the electromagnetic shielding self-cleaning structural color fabric.

[0048] Example 4

[0049] Step 1: Cut a PET fabric with a diameter of 10 cm, place it in anhydrous ethanol and deionized water for ultrasonic cleaning for 20 minutes each, and then place the flexible PI film in a 60°C oven for drying for 30 minutes to remove the residual liquid of anhydrous ethanol and deionized water;

[0050] Step 2: Take the PET fabric from step 1, fix it on the sample stage of the magnetron sputtering instrument, turn on the mechanical pump, draw vacuum until the vacuum gauge resistance gauge unit shows 20Pa, then turn on the solenoid valve and molecular pump, continue to draw high vacuum until the vacuum gauge ionization gauge unit shows 8*10 -4 Pa;

[0051] Step 3: After the vacuum extraction is completed, open the argon valve, and pass argon with a purity of 99.99% into the vacuum chamber of the magnetron sputtering instrument. Set the argon flow rate to 30sccm, turn the gate valve, adjust the vacuum chamber pressure to 1Pa displayed on the vacuum gauge resistance gauge unit, open the Ag target baffle, the target-substrate distance between the Ag target and the sample stage is 4cm, the sample stage speed is 25r / min, turn on the DC power supply, sputter-deposit the Ag film, set the sputtering pressure to 1Pa, the sputtering time to 20min, the sputtering power to 50W, wait for the sputtering to be completed, turn off the DC power supply, and close the Ag baffle;

[0052] Step 4: Open the TiO2 baffle, set the target-substrate distance between the TiO2 target and the sample stage to 4 cm, set the sample stage speed to 40 r / min, turn on the RF power supply, sputter deposit the TiO2 film, set the sputtering pressure to 0.5 Pa, the sputtering time to 30 min, and the sputtering power to 100 W. After the sputtering is completed, turn off the RF power supply and close the TiO2 baffle;

[0053] Step 5: Open the SiO2 baffle, the target-substrate distance between the SiO2 target and the sample stage is 4 cm, the sample stage rotation speed is 10 r / min, turn on the RF power supply, sputter deposit SiO2 film, set the sputtering gas pressure to 0.5 Pa, the sputtering time to 20 min, the sputtering power to 100 W, wait for the sputtering to be completed, turn off the RF power supply, close the SiO2 baffle, turn off the magnetron sputtering instrument, and obtain the electromagnetic shielding self-cleaning structural color fabric.

[0054] Example 5

[0055] Step 1: Cut a PET fabric with a diameter of 10 cm, place it in anhydrous ethanol and deionized water for ultrasonic cleaning for 20 minutes each, and then place the flexible PI film in a 60°C oven for drying for 30 minutes to remove the residual liquid of anhydrous ethanol and deionized water;

[0056] Step 2: Take the PET fabric from step 1, fix it on the sample stage of the magnetron sputtering instrument, turn on the mechanical pump, draw vacuum until the vacuum gauge resistance gauge unit shows 20Pa, then turn on the solenoid valve and molecular pump, continue to draw high vacuum until the vacuum gauge ionization gauge unit shows 8*10 -4 Pa;

[0057] Step 3: After the vacuum extraction is completed, open the argon valve, and pass argon with a purity of 99.99% into the vacuum chamber of the magnetron sputtering instrument. Set the argon flow rate to 30sccm, turn the gate valve, adjust the vacuum chamber pressure to 1Pa displayed on the vacuum gauge resistance gauge unit, open the Ag target baffle, the target-substrate distance between the Ag target and the sample stage is 4cm, the sample stage speed is 25r / min, turn on the DC power supply, sputter-deposit the Ag film, set the sputtering pressure to 1Pa, the sputtering time to 20min, the sputtering power to 50W, wait for the sputtering to be completed, turn off the DC power supply, and close the Ag baffle;

[0058] Step 4: Open the TiO2 baffle, set the target-substrate distance between the TiO2 target and the sample stage to 4cm, set the sample stage speed to 40r / min, turn on the RF power supply, sputter and deposit the TiO2 film, set the sputtering pressure to 0.5Pa, the sputtering time to 30min, and the sputtering power to 150W. After the sputtering is completed, turn off the RF power supply and close the TiO2 baffle;

[0059] Step 5: Open the SiO2 baffle, the target-substrate distance between the SiO2 target and the sample stage is 4 cm, the sample stage rotation speed is 10 r / min, turn on the RF power supply, sputter deposit SiO2 film, set the sputtering gas pressure to 0.5 Pa, the sputtering time to 20 min, the sputtering power to 100 W, wait for the sputtering to be completed, turn off the RF power supply, close the SiO2 baffle, turn off the magnetron sputtering instrument, and obtain the electromagnetic shielding self-cleaning structural color fabric.

[0060] Performance Testing

[0061] The color parameters L*, a*, and b* values ​​of each embodiment were tested using a colorimeter, and the test results are shown in Table 1.

[0062] Table 1 Color test of electromagnetic shielding self-cleaning structural color fabric

[0063]

[0064] Comparing with Examples 1, 2, and 3, as the sputtering time of the TiO2 layer increases, the L* value and the b* value show a downward trend, the a* value changes slightly, and the structural color fabric becomes darker and bluer overall. Comparing with Examples 2, 4, and 5, as the sputtering power of the TiO2 layer increases, the L* value and the b* value show an upward trend, the a* value shows a downward trend, and the structural color fabric becomes brighter, yellower, and greener overall.

[0065] Those skilled in the art should understand that the discussion of any of the above embodiments is only exemplary and is not intended to imply that the scope of the present invention is limited to these examples; under the concept of the present invention, the technical features in the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other changes in different aspects of the present invention as described above, which are not provided in detail for the sake of simplicity. Any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for preparing an electromagnetic shielding self-cleaning structural color fabric, characterized in that: The preparation method is to use PET fabric as a substrate, and to sequentially deposit an Ag film, a TiO2 film and a SiO2 film on the PET fabric by a radio frequency magnetron sputtering method to obtain an electromagnetic shielding self-cleaning structural color fabric.

2. The method for preparing an electromagnetic shielding self-cleaning structural color fabric according to claim 1, characterized in that: The preparation method comprises the following steps: Step 1: Take the PET fabric, remove dust and impurities, dry it, and place it in a dry environment for use; Step 2: Take the PET fabric from step 1, fix it on the sample stage of the magnetron sputtering instrument, turn on the mechanical pump, and draw the vacuum to 8*10 -4 Pa; Step 3: After the vacuum extraction is completed, open the argon valve, pass argon into the vacuum chamber of the magnetron sputtering instrument, turn the plug valve, adjust the vacuum chamber pressure to 1Pa displayed on the vacuum gauge resistance gauge unit, open the Ag target baffle, turn on the DC power supply, sputter and deposit the Ag film, set the sputtering time to 15-25min, the sputtering power to 45-55W, wait for the sputtering to be completed, turn off the DC power supply, and close the Ag baffle; Step 4: Open the TiO2 baffle, turn on the RF power supply, sputter and deposit the TiO2 film, set the sputtering pressure to 0.5 Pa, wait for the sputtering to be completed, turn off the RF power supply, and close the TiO2 baffle; Step 5: Open the SiO2 baffle, turn on the RF power supply, sputter deposit SiO2 film, set the sputtering pressure to 0.5Pa, the sputtering time to 15-25min, and the sputtering power to 95-105W. After waiting for the sputtering to be completed, turn off the RF power supply, close the SiO2 baffle, and close the magnetron sputtering instrument to obtain the electromagnetic shielding self-cleaning structural color fabric.

3. The method for preparing an electromagnetic shielding self-cleaning structural color fabric according to claim 2, characterized in that: In the step 1, dust and impurities are removed by placing the PET fabric in anhydrous ethanol and deionized water for ultrasonic cleaning for 15-25 minutes each.

4. The method for preparing an electromagnetic shielding self-cleaning structural color fabric according to claim 2, characterized in that: The drying temperature in step 1 is 60° C. and the drying time is 28-32 minutes.

5. The method for preparing an electromagnetic shielding self-cleaning structural color fabric according to claim 2, characterized in that: In the step 3, the purity of the argon gas introduced into the magnetron sputtering apparatus is 99.99%, and the argon gas flow rate is 30 sccm.

6. The method for preparing an electromagnetic shielding self-cleaning structural color fabric according to claim 2, characterized in that: In the step three, the target-substrate distance between the Ag target and the sample stage is 4 cm, and the sample stage rotation speed is 20-30 r / min; in the step four, the target-substrate distance between the TiO2 target and the sample stage is 4 cm, and the sample stage rotation speed is 30-50 r / min; in the step five, the target-substrate distance between the SiO2 target and the sample stage is 4 cm, and the sample stage rotation speed is 10-20 r / min.

7. The method for preparing an electromagnetic shielding self-cleaning structural color fabric according to claim 2, characterized in that: In the step 4, the sputtering time is 10 to 50 minutes, and the sputtering power is 30 to 100W.

8. The method for preparing an electromagnetic shielding self-cleaning structural color fabric according to claim 2, characterized in that: The sputtering processes in step three, step four and step five take place in the same vacuum chamber, and the sputtering time is continuous.

9. An electromagnetic shielding self-cleaning structural color fabric, characterized in that: The electromagnetic shielding self-cleaning structural color fabric is prepared by the preparation method of any one of claims 1 to 8.

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