Developing residual glue inhibitor and method

Abstract

The invention discloses a developing residual adhesive inhibitor and a method. The developing residual adhesive inhibitor comprises the following raw materials in percentage by mass: 1-30% of a surfactant compound, 0.01-5% of a corrosion and scale inhibitor, 0.1-20% of alkali and the balance of deionized water. According to the developing residual adhesive inhibitor disclosed by the invention, specific additives and a combination thereof are adopted and are added into 0.5-3wt% of an alkaline developing solution system for use, so that the problems of anti-sticking of residual adhesive in the developing solution and short maintenance period of equipment are solved. By adding the developing residual adhesive inhibitor, the service life of a developing solution can be remarkably prolonged, the problem of anti-sticking of the residual adhesive is solved, and the product yield is improved.

Description

Technical Field

[0001] The invention relates to the technical field of printed circuit board manufacturing, in particular to a developer adhesive residue inhibitor and a method thereof. Background Art

[0002] In the process of manufacturing printed circuit boards, the process of making circuit patterns is to use photosensitive dry film or ink (collectively referred to as photoresist materials) to adhere or coat the surface of the bare copper plate, and then use ultraviolet light of a specific wavelength to irradiate the surface of the photoresist material through a negative film with a pre-designed pattern, so that the photoresist material in a part of the area is cross-linked, and then the uncross-linked photoresist material is dissolved by immersion in a dilute sodium carbonate solution. This process is the development of the photoresist material, and the dilute sodium carbonate solution used is called a developer in the industry. In other developers, other inorganic bases or organic bases are used as dissolving agents for photoresist materials. The reason why photoresist materials can be dissolved in alkaline solutions is that these materials have acidic functional groups, mainly carboxyl groups (-COOH), which are neutralized in alkaline solutions, so that the uncross-linked photoresist materials are dissolved into the developer.

[0003] Since the photosensitive initiator and uncrosslinked monomer contained in the photoresist material are dissolved into the developer at the same time, when the amount of photoresist material dissolved increases, it will trigger a local polymerization reaction under the condition of visible light, forming insoluble organic matter floating or suspended in the developer, and finally forming residual glue, which may stick to the surface of the printed circuit board, causing abnormal etching and short circuit of the printed circuit board. In addition, the residual glue will also adhere to the transmission parts of the equipment and the surface of the developer tank, reducing the maintenance cycle and production efficiency of the equipment. Summary of the invention

[0004] The object of the present invention is to provide a developer adhesive residue inhibitor and method to solve the problems raised in the above background technology.

[0005] To achieve the above object, the present invention provides the following technical solution: a developer residual adhesive inhibitor, comprising the following raw materials in percentage by mass: 1%-30% surfactant compound, 0.01%-5% corrosion and scale inhibitor and 0.1%-20% alkali, and the balance is deionized water.

[0006] Preferably, the surfactant compound includes but is not limited to anionic surfactants, nonionic surfactants or a combination of the two, and the anionic surfactant includes but is not limited to saturated or unsaturated alkyl sulfonic acids and salts thereof, saturated or unsaturated alkyl carboxylic acids and salts thereof or saturated or unsaturated alkyl phosphoric acids and salts thereof.

[0007] Preferably, the corrosion inhibitor and scale inhibitor includes but is not limited to one or more combinations of sodium nitrite, sodium benzoate, sodium tungstate, sodium molybdate, sodium phosphate, sodium nitrate, sodium silicate, zinc sulfate, zinc bromide, zinc iodide, zinc acetate, hydroxymethylene diphosphoric acid, aminotrimethylene phosphoric acid, sodium thiocarbamide or water-soluble silicone.

[0008] Preferably, the base includes but is not limited to one or more combinations of sodium carbonate, sodium bicarbonate, potassium carbonate, potassium bicarbonate, tetramethylammonium hydroxide, tetraethylammonium hydroxide, sodium hydroxide or potassium hydroxide.

[0009] A preparation process of a developer residual adhesive inhibitor comprises the following steps:

[0010] Step 1, preparing raw materials: preparing 1%-30% of a surfactant compound, 0.01%-5% of a corrosion and scale inhibitor, 0.1%-20% of an alkali and the balance being deionized water, and mixing them to obtain a mixed solution;

[0011] Step 2: Add 0.5% of the mixed solution obtained in step 1 to the aged developer, stir evenly, then add 1% by volume of dilute sulfuric acid, mix thoroughly and let stand, the precipitate formation time is greater than 3 minutes, the complete sedimentation time is greater than 30 minutes, and there is a small amount of residue on the filter paper after filtering.

[0012] Preferably, the mass percentage of dilute sulfuric acid in step 2 is 50%wt.

[0013] Compared with the prior art, the present invention has the following beneficial effects:

[0014] The developer adhesive residue inhibitor of the present invention adopts specific additives and combinations thereof, and is added to a 0.5%-3%wt alkaline developer system for use, thereby overcoming the problems of adhesive residue back-adhesion in the developer and short equipment maintenance cycle. Adding the developer adhesive residue inhibitor of the present invention can significantly increase the life of the developer, reduce the adhesive residue back-adhesion problem, and improve the product yield. DETAILED DESCRIPTION

[0015] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0016] A developer residual adhesive inhibitor comprises the following raw materials in percentage by mass: 1%-30% of a surfactant compound, 0.01%-5% of a corrosion and scale inhibitor, and 0.1%-20% of an alkali, with the remainder being deionized water.

[0017] The surfactant compound includes but is not limited to anionic surfactant, nonionic surfactant or a combination of the two, wherein the anionic surfactant includes but is not limited to saturated or unsaturated alkyl sulfonic acid and its salt, saturated or unsaturated alkyl carboxylic acid and its salt or saturated or unsaturated alkyl phosphoric acid and its salt. More preferably, it is 3%-20%. When it is lower than 1%, the surfactant compound cannot inhibit the generation of residual adhesive during development, and when it is higher than 30%, it is difficult to treat the developer wastewater.

[0018] Corrosion and scale inhibitors include, but are not limited to, sodium nitrite, sodium benzoate, sodium tungstate, sodium molybdate, sodium phosphate, sodium nitrate, sodium silicate, zinc sulfate, zinc bromide, zinc iodide, zinc acetate, hydroxymethylene diphosphoric acid, aminotrimethylene phosphoric acid, sodium fumei or one or more combinations of water-soluble silicones, and are more preferably 0.1%-3%. When the content is lower than 0.1%, it cannot play a role in corrosion and scale inhibition for copper, and when the content is higher than 3%, sewage treatment is difficult.

[0019] The alkali includes but is not limited to one or more combinations of sodium carbonate, sodium bicarbonate, potassium carbonate, potassium bicarbonate, tetramethylammonium hydroxide, tetraethylammonium hydroxide, sodium hydroxide or potassium hydroxide, and is more preferably 1%-15%. When it is lower than 0.1%, the developer will be diluted to reduce its alkalinity. When it is higher than 20%, it is difficult to dissolve the surfactant.

[0020] A preparation process of a developer residual adhesive inhibitor comprises the following steps:

[0021] Step 1, preparing raw materials: preparing 1%-30% of a surfactant compound, 0.01%-5% of a corrosion and scale inhibitor, 0.1%-20% of an alkali and the balance being deionized water, and mixing them to obtain a mixed solution;

[0022] Step 2: Add 0.5% of the mixed solution obtained in step 1 to the aged developer, stir evenly, then add 1% by volume of dilute sulfuric acid, the mass percentage of which is 50% wt., mix thoroughly and let stand, the precipitate formation time is greater than 3 minutes, the complete sedimentation time is greater than 30 minutes, and there is a small amount of residue on the filter paper after filtering.

[0023] Embodiment 1:

[0024] A developer adhesive residue inhibitor is prepared by mixing the following materials with deionized water: 5% potassium carbonate by weight, 0.2% sodium tungstate, 1% hydroxymethylene diphosphonic acid, 5% L61 (Dow Chemical) polyether nonionic surfactant, 0.5% sodium dodecyl sulfate, and the balance is deionized water, i.e., the developer adhesive residue inhibitor of the present invention. The developer adhesive residue inhibitor solution is added to the aged developer at a ratio of 0.5%, stirred evenly, and then 1% dilute sulfuric acid (50%wt) is added thereto by volume, mixed thoroughly and allowed to stand, the precipitate formation time is greater than 3 minutes, the complete sedimentation time is greater than 30 minutes, and a small amount of residue is left on the filter paper after filtration.

[0025] Embodiment 2:

[0026] A developer adhesive residue inhibitor is prepared by mixing the following materials with deionized water: 5% potassium carbonate by weight, 0.2% sodium tungstate, 1% aminotrimethylene phosphoric acid, 5% L61 (Dow Chemical) polyether nonionic surfactant, 0.5% sodium dodecyl sulfate, and the balance is deionized water, i.e., the developer adhesive residue inhibitor of the present invention. The developer adhesive residue inhibitor solution is added to the aged developer at a ratio of 0.5%, stirred evenly, and then 1% dilute sulfuric acid (50%wt) is added thereto by volume, mixed thoroughly and allowed to stand, the precipitate formation time is greater than 3 minutes, the complete sedimentation time is greater than 30 minutes, and a small amount of residue is left on the filter paper after filtration.

[0027] Embodiment three:

[0028] A developer adhesive residue inhibitor is prepared by mixing the following materials with deionized water: 5% potassium hydroxide by weight, 0.2% sodium tungstate, 1% hydroxymethylene diphosphonic acid, 5% L61 (Dow Chemical) polyether nonionic surfactant, 0.5% sodium dodecyl sulfate, and the balance is deionized water, i.e., the developer adhesive residue inhibitor of the present invention. The developer adhesive residue inhibitor solution is added to the aged developer at a ratio of 0.5%, stirred evenly, and then 1% dilute sulfuric acid (50%wt) is added thereto by volume, mixed thoroughly and allowed to stand, the precipitate formation time is greater than 3 minutes, the complete sedimentation time is greater than 30 minutes, and a small amount of residue is left on the filter paper after filtration.

[0029] Embodiment 4:

[0030] A developer adhesive residue inhibitor is prepared by mixing the following materials with deionized water: 5% by weight potassium hydroxide, 0.2% by weight sodium tungstate, 1% aminotrimethylene phosphoric acid, 5% L61 (Dow Chemical) polyether nonionic surfactant, 0.5% sodium dodecyl sulfate, and the balance is deionized water, i.e., the developer adhesive residue inhibitor of the present invention. The developer adhesive residue inhibitor solution is added to the aged developer at a ratio of 0.5%, stirred evenly, and then 1% by volume of dilute sulfuric acid (50% by weight) is added thereto, mixed thoroughly and allowed to stand, the precipitation formation time is greater than 3 minutes, the complete sedimentation time is greater than 30 minutes, and a small amount of residue is left on the filter paper after filtration.

[0031] Comparative Example 1:

[0032] Add 0.5% pure water to the aged developer, stir evenly, then add 1% by volume of dilute sulfuric acid (50% wt) into it, mix thoroughly and let stand, a large amount of precipitate will be generated immediately, and the sedimentation time of the precipitate is less than 5 minutes. After filtration, a large amount of developer residue remains on the filter paper.

[0033] Comparative Example 2:

[0034] A developer adhesive residue inhibitor is prepared by mixing the following materials with deionized water: 5% by weight potassium hydroxide, 0.2% by weight sodium tungstate, 5% L61 (Dow Chemical) polyether nonionic surfactant, 0.5% sodium dodecyl sulfate, and the balance is deionized water, i.e., the developer adhesive residue inhibitor of the present invention. The developer adhesive residue inhibitor solution is added to the aged developer at a ratio of 0.5%, stirred evenly, and then 1% by volume of dilute sulfuric acid (50% by weight) is added thereto, mixed thoroughly and allowed to stand, the precipitate formation time is greater than 3 minutes, the complete sedimentation time is less than 5 minutes, and a large amount of developer residue remains on the filter paper after filtration.

[0035] Comparative Example 3:

[0036] A developer adhesive residue inhibitor is prepared by mixing the following materials with deionized water: 5% potassium hydroxide by weight, 0.2% sodium tungstate, 1% aminotrimethylenephosphoric acid, 0.5% sodium dodecyl sulfate, and the balance is deionized water, i.e., the developer adhesive residue inhibitor of the present invention. The developer adhesive residue inhibitor solution is added to the aged developer at a ratio of 0.5%, stirred evenly, and then 1% dilute sulfuric acid (50%wt) is added thereto by volume, mixed thoroughly and allowed to stand, the precipitate formation time is greater than 3 minutes, the complete sedimentation time is less than 5 minutes, and a large amount of developer residue remains on the filter paper after filtration.

[0037] The developer adhesive residue inhibitor of the present invention adopts specific additives and combinations thereof, and is added to a 0.5%-3%wt alkaline developer system for use, thereby overcoming the problems of adhesive residue back-adhesion in the developer and short equipment maintenance cycle. Adding the developer adhesive residue inhibitor of the present invention can significantly increase the life of the developer, reduce the adhesive residue back-adhesion problem, and improve the product yield.

[0038] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A developer adhesive residue inhibitor, characterized in that: The raw materials include the following mass percentages: 1%-30% of surfactant compound, 0.01%-5% of corrosion and scale inhibitor, and 0.1%-20% of alkali, and the balance is deionized water.

2. The developer adhesive residue inhibitor according to claim 1, characterized in that: The surfactant compound includes but is not limited to anionic surfactants, nonionic surfactants or a combination of the two, and the anionic surfactant includes but is not limited to saturated or unsaturated alkyl sulfonic acids and salts thereof, saturated or unsaturated alkyl carboxylic acids and salts thereof or saturated or unsaturated alkyl phosphoric acids and salts thereof.

3. The developer adhesive residue inhibitor according to claim 1, characterized in that: The corrosion and scale inhibitors include, but are not limited to, one or more combinations of sodium nitrite, sodium benzoate, sodium tungstate, sodium molybdate, sodium phosphate, sodium nitrate, sodium silicate, zinc sulfate, zinc bromide, zinc iodide, zinc acetate, hydroxymethylene diphosphoric acid, aminotrimethylene phosphoric acid, sodium thiamethoxam or water-soluble silicone.

4. The developer adhesive residue inhibitor according to claim 1, characterized in that: The base includes, but is not limited to, one or more combinations of sodium carbonate, sodium bicarbonate, potassium carbonate, potassium bicarbonate, tetramethylammonium hydroxide, tetraethylammonium hydroxide, sodium hydroxide or potassium hydroxide.

5. A process for preparing a developer residual adhesive inhibitor according to any one of claims 1 to 4, characterized in that: The following steps are involved: Step 1, preparing raw materials: preparing 1%-30% of a surfactant compound, 0.01%-5% of a corrosion and scale inhibitor, 0.1%-20% of an alkali and the balance being deionized water, and mixing them to obtain a mixed solution; Step 2: Add 0.5% of the mixed solution obtained in step 1 to the aged developer, stir evenly, then add 1% by volume of dilute sulfuric acid, mix thoroughly and let stand, the precipitate formation time is greater than 3 minutes, the complete sedimentation time is greater than 30 minutes, and there is a small amount of residue on the filter paper after filtering.

6. The process for preparing a developer residual adhesive inhibitor according to claim 5, characterized in that: The mass percentage of the dilute sulfuric acid in the step 2 is 50%wt.