Equivalent circuit and chaotic circuit of second-order magnetic control memristor

Abstract

The invention discloses an equivalent circuit of a second-order magnetic control memristor and a chaotic circuit, and belongs to the field of memristors, a first resistor in the equivalent circuit can simulate the resistance characteristic of the second-order magnetic control memristor, a power supply can provide voltage, an integrator can integrate the output voltage of the power supply and generate a magnetic flux characterization signal, and the magnetic flux characterization signal is used for representing the magnetic flux. The multiplier can multiply the output voltage of the power supply by the magnetic flux characterization signal, so that the current meeting the target characteristic (the voltage and current characteristic of the second-order magnetic control memristor) is generated in the equivalent circuit, namely, the equivalent circuit of the second-order magnetic control memristor has the resistance characteristic of the second-order magnetic control memristor. The equivalent circuit is simple in structure, so that the size and the implementation cost of the equivalent circuit are reduced.

Description

Technical Field

[0001] The present invention relates to the field of memristors, and in particular to an equivalent circuit and a chaotic circuit of a second-order magnetically controlled memristor. Background Art

[0002] A memristor is a nonlinear resistor with memory function. It changes the resistance value by controlling current or voltage. It is considered to be the fourth basic passive electronic device besides resistors, capacitors and inductors. However, the manufacturing cost of a memristor is high and the manufacturing conditions are strict. Therefore, the various functions of a memristor can be realized through the equivalent circuit simulation of a memristor, and the memristive characteristics and potential application value of a memristor can be analyzed and studied. However, the related technology lacks a mature equivalent circuit of a second-order magnetically controlled memristor, resulting in a complex structure, large size and high cost of the equivalent circuit of a second-order magnetically controlled memristor.

[0003] Therefore, how to provide a solution to the above technical problems is a problem that those skilled in the art need to solve at present. Summary of the invention

[0004] The purpose of the present invention is to provide an equivalent circuit and a chaotic circuit of a second-order magnetic controlled memristor. The equivalent circuit of the second-order magnetic controlled memristor in the present invention includes a power supply, an integrator, a multiplier and a first resistor. On the basis of realizing the resistance characteristics of the second-order magnetic controlled memristor, it has the characteristics of a simple structure, which is beneficial to reducing the volume and implementation cost of the equivalent circuit.

[0005] In order to solve the above technical problems, the present invention provides an equivalent circuit of a second-order magnetically controlled memristor, comprising a power supply, an integrator, a multiplier and a first resistor;

[0006] The output end of the power supply is respectively connected to the input end of the integrator and the first end of the first resistor, the output end of the integrator is connected to the input end of the filter circuit, the output end of the filter circuit and the output end of the power supply are both connected to the input end of the multiplier, and the common end formed by the output end of the multiplier and the second end of the first resistor serves as the output end of the equivalent circuit;

[0007] The integrator is used to integrate the output voltage of the power supply and generate a magnetic flux characterization signal;

[0008] The multiplier is used to multiply the output voltage of the power supply by the magnetic flux characterization signal to generate a current that meets the target characteristics;

[0009] The target characteristic refers to the voltage-current characteristic of the second-order magnetically controlled memristor.

[0010] On the other hand, the integrator includes an operational amplifier, a first capacitor and a second resistor;

[0011] The first end of the second resistor serves as the input end of the integrator, the second end of the second resistor is respectively connected to the input end of the operational amplifier and the first end of the first capacitor, the control end of the operational amplifier is used to connect to the bias voltage, the ground end of the operational amplifier is grounded, and the second end of the first capacitor is connected to the output end of the operational amplifier.

[0012] On the other hand, the operational amplifier includes a first transistor, a second transistor and a third resistor;

[0013] The first end of the third resistor serves as a positive voltage terminal, the second end of the third resistor and the input end of the second transistor serve as the output end of the operational amplifier, the control end of the second transistor serves as the input end of the operational amplifier, the output end of the second transistor is connected to the input end of the first transistor, the control end of the first transistor serves as a bias voltage terminal, and the output end of the first transistor is grounded.

[0014] On the other hand, the equivalent circuit of the second-order magnetically controlled memristor further includes a filtering circuit;

[0015] The input end of the filter circuit is connected to the output end of the operational amplifier, and the output end of the filter circuit is connected to the input end of the multiplier.

[0016] On the other hand, the filtering circuit includes a second capacitor and a fourth resistor;

[0017] The first end of the second capacitor serves as the input end of the filter circuit, the common end of the second end of the second capacitor and the first end of the fourth resistor serves as the output end of the filter capacitor, and the second end of the fourth resistor is grounded.

[0018] On the other hand, the first transistor includes an N-channel metal oxide semiconductor field effect transistor, and the second transistor includes a P-channel metal oxide semiconductor field effect transistor;

[0019] The source of the second transistor and the second end of the third resistor serve as the output end of the operational amplifier, the gate of the second transistor serves as the control end of the second transistor, the drain of the second transistor is connected to the drain of the first transistor, the gate of the first transistor serves as the bias voltage terminal, and the source of the first transistor is grounded.

[0020] On the other hand, target characteristics include:

[0021] ;

[0022] Among them, i(t) is the current of the second-order magnetic memristor, u(t) is the voltage of the second-order magnetic memristor, is the exascale value of the second-order magnetically controlled memristor, a1 is the first-order coefficient of the second-order magnetically controlled memristor, a2 is the second-order coefficient of the second-order magnetically controlled memristor, is the magnetic flux of the second-order magnetically controlled memristor.

[0023] On the other hand, the output signal of the integrator satisfies the integral expression;

[0024] The integral expression includes:

[0025] ;

[0026] Wherein, v1 is the output signal of the integrator, R2 is the resistance of the second resistor, C1 is the capacitance of the first capacitor, t is the time, and τ is any time point between [0, t]. is the time-varying magnetic flux.

[0027] On the other hand, the output signal of the multiplier satisfies the multiplication expression;

[0028] The multiplication expression includes:

[0029] ;

[0030] Wherein, v2 is the output signal of the multiplier, K1 is a preset constant, and u is the output voltage of the power supply;

[0031] The voltage across the first resistor satisfies the resistance-voltage expression;

[0032] The resistance-voltage expression includes:

[0033] ;

[0034] Wherein, u-v2 represents the voltage across the first resistor;

[0035] The input current of the equivalent circuit of the second-order magnetically controlled memristor satisfies the current expression;

[0036] The current expression includes:

[0037] ;

[0038] Wherein, i is the input current of the equivalent circuit of the second-order magnetically controlled memristor, and R1 is the resistance value of the first resistor;

[0039] The exascale value of the second-order magnetically controlled memristor satisfies an exascale value expression;

[0040] The billion derivative expression includes:

[0041] ;

[0042] Wherein, W is the exascale value of the second-order magnetically controlled memristor.

[0043] In order to solve the above technical problem, the present invention further provides a chaotic circuit, including an equivalent circuit of the second-order magnetically controlled memristor as described above.

[0044] Beneficial effects: The present invention provides an equivalent circuit of a second-order magnetically controlled memristor, wherein the first resistor in the present invention can simulate the resistance characteristics of the second-order magnetically controlled memristor, the power supply can provide voltage, the integrator can integrate the output voltage of the power supply and generate a magnetic flux characterization signal, and the multiplier can multiply the output voltage of the power supply with the magnetic flux characterization signal, thereby generating a current that meets the target characteristics (the voltage and current characteristics of the second-order magnetically controlled memristor) in the equivalent circuit, that is, the equivalent circuit of the second-order magnetically controlled memristor has the resistance characteristics of the second-order magnetically controlled memristor, and the structure of the equivalent circuit in the present invention is relatively simple, thereby reducing the volume and implementation cost of the equivalent circuit.

[0045] The present invention also provides a chaotic circuit having the same beneficial effects as the equivalent circuit of the above second-order magnetically controlled memristor. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the relevant technologies and the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0047] Figure 1 A schematic diagram of the structure of an equivalent circuit of a second-order magnetically controlled memristor provided by the present invention;

[0048] Figure 2 A schematic diagram of the structure of an integrator provided by the present invention;

[0049] Figure 3 A schematic diagram of the structure of an operational amplifier provided by the present invention;

[0050] Figure 4 The present invention provides a schematic structural diagram of an integrator and a filter circuit. DETAILED DESCRIPTION

[0051] The core of the present invention is to provide an equivalent circuit and a chaotic circuit of a second-order magnetic controlled memristor. The equivalent circuit of the second-order magnetic controlled memristor in the present invention includes a power supply, an integrator, a multiplier and a first resistor. On the basis of realizing the resistance characteristics of the second-order magnetic controlled memristor, it has the characteristics of a simple structure, which is beneficial to reducing the volume and implementation cost of the equivalent circuit.

[0052] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0053] Please refer to Figure 1 , Figure 1 A schematic structural diagram of an equivalent circuit of a second-order magnetically controlled memristor provided by the present invention, wherein the equivalent circuit of the second-order magnetically controlled memristor comprises a power supply, an integrator, a multiplier and a first resistor;

[0054] The output end of the power supply is respectively connected to the input end of the integrator and the first end of the first resistor, the output end of the integrator is connected to the input end of the filter circuit, the output end of the filter circuit and the output end of the power supply are both connected to the input end of the multiplier, and the common end formed by the output end of the multiplier and the second end of the first resistor serves as the output end of the equivalent circuit;

[0055] an integrator, for integrating the output voltage of the power supply and generating a magnetic flux characterization signal;

[0056] A multiplier for multiplying the output voltage of the power supply with the magnetic flux characterization signal so as to generate a current satisfying a target characteristic;

[0057] The target characteristic refers to the voltage-current characteristic of the second-order magnetically controlled memristor.

[0058] Specifically, considering the technical problems in the above background technology, and considering that the equivalent circuit needs to meet the voltage and current characteristics of the second-order magnetic controlled memristor, the equivalent simulation of the resistance characteristics of the second-order magnetic controlled memristor is realized, and the magnetic controlled memristor belongs to an electronic component that controls the resistance value by magnetic flux, and its resistance value depends on the relationship between the amount of charge passing through it and the magnetic flux. When the magnetic flux changes, its resistance value will also change accordingly, and this change has memory, that is, the resistance value will be affected by the past magnetic flux change; therefore, in the embodiment of the present invention, the output voltage of the power supply can be integrated by an integrator to generate a magnetic flux characterization signal, and the multiplier can multiply the output voltage of the power supply with the magnetic flux characterization signal to generate a current that meets the target characteristics (the voltage and current characteristics of the second-order magnetic controlled memristor), so that the equivalent circuit can meet the voltage and current characteristics of the second-order magnetic controlled memristor, that is, the resistance characteristics of the second-order magnetic controlled memristor are simulated.

[0059] Among them, the first resistor can be used to generate current under the action of the power supply output voltage, thereby providing a basis for "the equivalent circuit can satisfy the voltage and current characteristics of the second-order magnetically controlled memristor".

[0060] Specifically, the multiplier in the embodiment of the present invention may be selected from relevant commercial electronic components, such as a multiplier of model AD539 or AD734, etc., and the embodiment of the present invention is not limited here.

[0061] Specifically, the equivalent circuit in the embodiment of the present invention can be applied to a chaotic circuit and an adjustable filter circuit, etc., and the embodiment of the present invention is not limited here.

[0062] Among them, memristor is a nonlinear resistor with memory function. It changes the resistance value by controlling current or voltage. It is considered to be the fourth basic passive electronic device besides resistor, capacitor and inductor. Memristor devices have the characteristics of simple structure, small size, low energy consumption, high density and non-volatility, and have good application prospects in resistive storage, artificial neural network and artificial intelligence due to their unique electrical properties. However, the manufacturing cost of memristor devices is high and the manufacturing conditions are strict. The cost of commercially valuable memristors is high. It is unrealistic to prepare a large number of memristor entities in a short period of time to meet engineering applications. Therefore, it is of great significance to analyze and study the memristor characteristics and potential application value through the memristor mathematical model and the use of existing circuit elements to simulate and realize the various functions of the memristor. It not only reduces the cost of preparing memristors, but also helps to reduce the impact of complex environments on memristors.

[0063] Specifically, a memristor is a nonlinear resistor element with memory function. A magnetically controlled memristor is one whose resistance state can be regulated by an external magnetic field. A magnetically controlled memristor usually includes a magnetic material layer and an electrode. The magnetic domain structure of the magnetic material layer changes under the action of a magnetic field, thereby affecting the resistance characteristics of the memristor. A magnetically controlled memristor has (1) non-volatility: even after the external magnetic field disappears, the memristor can still maintain its current resistance state, which gives it a unique advantage in storing information. For example, in the event of a power outage, the information stored in the magnetically controlled memristor will not be lost, and it can be used to construct a non-volatile memory. (2) continuous adjustability: the resistance value of the memristor can be continuously adjusted within a certain range by changing the strength and direction of the external magnetic field. This feature is very useful in the fields of analog signal processing and neural networks, for example, it can simulate the weight adjustment of biological neuron synapses. (3) fast response: the response speed to the magnetic field is fast, and the resistance state can be switched within nanoseconds or even picoseconds. This makes it have potential application value in high-speed digital circuits and high-frequency signal processing. The application areas of magnetic controlled memristors include (1) non-volatile memory: the non-volatility and adjustable resistance of magnetic controlled memristors can be used to manufacture high-density, low-power memory. Compared with traditional flash memory, magnetic controlled memristor memory has faster read and write speeds and higher durability. (2) analog signal processing: it can be used in analog circuits such as analog filters and amplifiers. For example, by adjusting the resistance of magnetic controlled memristors, the cutoff frequency of filters or the gain of amplifiers can be changed to achieve real-time processing of analog signals. (3) neural networks and artificial intelligence: imitating the synaptic behavior in biological neural networks, neural networks are constructed as artificial synaptic elements. In the field of artificial intelligence such as deep learning, neural networks composed of a large number of magnetic controlled memristors can achieve efficient parallel computing and complex pattern recognition. (4) logic circuits: construct new logic circuits, such as basic logic units such as NOT gates, AND gates, and OR gates. Due to their unique resistance characteristics, they can realize some functions that are difficult to achieve with traditional logic circuits, such as multi-valued logic operations.

[0064] The present invention provides an equivalent circuit of a second-order magnetic controlled memristor. The first resistor in the present invention can simulate the resistance characteristics of the second-order magnetic controlled memristor, the power supply can provide voltage, the integrator can integrate the output voltage of the power supply and generate a magnetic flux characterization signal, and the multiplier can multiply the output voltage of the power supply with the magnetic flux characterization signal, thereby generating a current that meets the target characteristics (the voltage and current characteristics of the second-order magnetic controlled memristor) in the equivalent circuit, that is, the equivalent circuit of the second-order magnetic controlled memristor has the resistance characteristics of the second-order magnetic controlled memristor, and the structure of the equivalent circuit in the present invention is relatively simple, thereby reducing the volume and implementation cost of the equivalent circuit.

[0065] Based on the above embodiments:

[0066] As an optional embodiment, the integrator includes an operational amplifier, a first capacitor and a second resistor;

[0067] The first end of the second resistor serves as the input end of the integrator, the second end of the second resistor is respectively connected to the input end of the operational amplifier and the first end of the first capacitor, the control end of the operational amplifier is used to connect the bias voltage, the ground end of the operational amplifier is grounded, and the second end of the first capacitor is connected to the output end of the operational amplifier.

[0068] Specifically, the integrator implemented based on the operational amplifier has the advantages of simple structure and easy maintenance.

[0069] Specifically, in order to better illustrate the embodiments of the present invention, please refer to Figure 2 , Figure 2 A schematic diagram of the structure of an integrator provided by the present invention, Figure 2 R2 is the second resistor, C1 is the first capacitor, R3, M1 and M2 can form an operational amplifier, v1 is the magnetic flux characterization signal output by the operational amplifier, VDD is the positive voltage, Vin is the input voltage of the integrator (that is, the output voltage of the power supply), and Vbias is the bias voltage (provided by the bias circuit).

[0070] Of course, in addition to this specific structure, the integrator may also be of other types, which is not limited in the embodiment of the present invention.

[0071] As an optional embodiment, the operational amplifier includes a first transistor, a second transistor and a third resistor;

[0072] The first end of the third resistor serves as a positive voltage terminal, the second end of the third resistor and the input end of the second transistor serve as output ends of the operational amplifier, the control end of the second transistor serves as the input end of the operational amplifier, the output end of the second transistor is connected to the input end of the first transistor, the control end of the first transistor serves as a bias voltage terminal, and the output end of the first transistor is grounded.

[0073] Specifically, in order to better illustrate the embodiments of the present invention, please refer to Figure 3 , Figure 3 This is a schematic diagram of the structure of an operational amplifier provided by the present invention, R3 is a third resistor, M1 is a first transistor, and M2 is a second transistor.

[0074] Specifically, considering that the operational amplifier can be constructed based on a pair of transistors, and this form of operational amplifier has the advantages of simple structure, small size and low power consumption, the operational amplifier in the embodiment of the present invention may include a first transistor, a second transistor and a third resistor, that is, it can be constructed based on a pair of transistors.

[0075] Of course, in addition to this specific form, the operational amplifier may also be in other specific forms, which is not limited in the embodiment of the present invention.

[0076] As an optional embodiment, the equivalent circuit of the second-order magnetically controlled memristor further includes a filtering circuit;

[0077] The input end of the filter circuit is connected to the output end of the operational amplifier, and the output end of the filter circuit is connected to the input end of the multiplier.

[0078] Specifically, considering that the magnetic flux characterization signal output by the integrator may contain interference signals, in order to improve the accuracy of the equivalent circuit, in the embodiment of the present invention, the magnetic flux characterization signal output by the integrator can be filtered by a filtering circuit.

[0079] As an optional embodiment, the filtering circuit includes a second capacitor and a fourth resistor;

[0080] The first end of the second capacitor serves as the input end of the filter circuit, the common end of the second end of the second capacitor and the first end of the fourth resistor serves as the output end of the filter capacitor, and the second end of the fourth resistor is grounded.

[0081] Specifically, in order to better illustrate the embodiments of the present invention, please refer to Figure 4 , Figure 4 A schematic diagram of the structure of an integrator and a filter circuit provided by the present invention, Figure 4 C2 is the second capacitor, and R4 is the fourth resistor.

[0082] Specifically, the filter circuit in the embodiment of the present invention includes a second capacitor and a fourth circuit, which can filter out the DC component of the operational amplifier introduced by the internal resistance of the bias circuit that provides the bias voltage Vbias, and the filter circuit has fewer components, thereby reducing the volume and cost of the equivalent circuit.

[0083] Of course, in addition to this specific structure, the filter circuit may also have other specific structures, which is not limited in the embodiment of the present invention.

[0084] As an optional embodiment, the first transistor includes an N-channel metal oxide semiconductor field effect transistor, and the second transistor includes a P-channel metal oxide semiconductor field effect transistor;

[0085] The source of the second transistor and the second end of the third resistor serve as the output end of the operational amplifier, the gate of the second transistor serves as the control end of the second transistor, the drain of the second transistor is connected to the drain of the first transistor, the gate of the first transistor serves as a bias voltage terminal, and the source of the first transistor is grounded.

[0086] Specifically, considering that the conduction condition of a P-channel MOS tube (Metal-Oxide-Semiconductor Field-EffectTransistor) causes its source to be more suitable for connecting a high voltage, and the conduction condition of an N-channel MOS tube causes its source to be more suitable for connecting a low voltage, the second transistor in the embodiment of the present invention may be a PMOS, and the first transistor may be an NMOS, which is conducive to reducing the design difficulty of the driving circuit of the MOS tube.

[0087] Specifically, considering that the first transistor can operate in a triode region with lower power consumption, in order to further reduce the power consumption of the operational amplifier, the first transistor can be controlled to operate in the triode region.

[0088] Of course, in addition to this specific form, the combination and connection relationship between the first transistor and the second transistor may also be of other types, which are not limited in the embodiment of the present invention.

[0089] Among them, PMOS is formed by selective doping on an N-type silicon substrate to form a P-type doped region as the source and drain. The substrate is N-type, the channel is P-type, and there is a silicon dioxide insulating layer between the gate and the source and drain. When a negative voltage is applied to the gate relative to the source, a movable positive charge hole is induced in the substrate, forming a P-type channel connecting the source and the drain, so that the current flows from the source to the drain. In addition, the larger the absolute value of the gate voltage, the smaller the on-resistance of the channel and the larger the current; the low level of the gate (relative to the source) is disconnected and the high level is turned on. In other words, the source of PMOS is generally connected to a high potential (such as a power supply voltage), and when the gate voltage is lower than a certain threshold (negative voltage), the PMOS tube is turned on. In the on state, the current flows from the source to the drain. The mobility of holes is lower than that of electrons, so the conductivity of PMOS is relatively poor, but it has a higher input impedance and better noise suppression capability.

[0090] Among them, NMOS is made on a P-type silicon substrate, with two N+ regions with high doping concentration as the source and drain. The substrate is P-type, the channel is N-type, and there is also a silicon dioxide insulating layer between the gate and the source and drain. When a positive voltage is applied to the gate relative to the source, a thin N-type layer, namely the inversion layer, will be formed on the surface of the P-type substrate, forming an N-type conductive channel connecting the source and the drain, so that the current flows from the drain to the source. As the gate voltage increases, the conductive channel becomes thicker and the channel resistance becomes smaller. The gate is turned on when it is high (relative to the source) and disconnected when it is low. The source of NMOS is generally grounded or at a low potential. When the gate voltage is higher than a certain threshold (positive voltage), the NMOS tube is turned on. In the on state, the current flows from the drain to the source. The higher the mobility of electrons, the better the conductivity of NMOS and the faster the switching speed, but the input impedance is relatively low and the sensitivity to noise is high.

[0091] As an optional embodiment, the target characteristics include:

[0092] ;

[0093] Among them, i(t) is the current of the second-order magnetic memristor, u(t) is the voltage of the second-order magnetic memristor, is the exascale value of the second-order magnetically controlled memristor, a1 is the first-order coefficient of the second-order magnetically controlled memristor, a2 is the second-order coefficient of the second-order magnetically controlled memristor, is the magnetic flux of the second-order magnetically controlled memristor.

[0094] Specifically, the theoretical starting point in the embodiment of the present invention is to describe the relationship between magnetic flux and charge in the form of Taylor series, and the relationship is:

[0095] ;

[0096] Among them, a n is the n-order coefficient of magnetic flux, n represents the order, n∈[1,∞), then the memristor value of the magnetically controlled memristor can be deduced as:

[0097] ;

[0098] Among them, W is the derivative value.

[0099] Then the relationship between the current and voltage of the magnetically controlled memristor is obtained as follows:

[0100] ;

[0101] Among them, i(t) and u(t) are the current and voltage of the memristor, and the variable is the magnetic flux of the memristor, and q is the charge. The present invention is based on a second-order magnetically controlled memristor, and the relationship between current and voltage (that is, the voltage-current characteristic of the second-order magnetically controlled memristor) is:

[0102] .

[0103] Specifically, the above target characteristics can accurately describe the relationship between the charge and the magnetic flux in the second-order magnetically controlled memristor, which is beneficial to improving the accuracy of the equivalent circuit of the second-order magnetically controlled memristor.

[0104] As an optional embodiment, the output signal of the integrator satisfies the integral expression;

[0105] The integral expressions include:

[0106] ;

[0107] Wherein, v1 is the output signal of the integrator, R2 is the resistance of the second resistor, C1 is the capacitance of the first capacitor, t is the time, and τ is any time point between [0, t]. is the time-varying magnetic flux.

[0108] Specifically, the integrator can generate magnetic flux, and specifically obtain a magnetic flux characterization signal v1, which satisfies the above integral expression. Through the integral expression, the magnetic flux characterization signal can be quantitatively analyzed, and the second resistor and the first capacitor can be reasonably designed.

[0109] As an optional embodiment, the output signal of the multiplier satisfies the multiplication expression;

[0110] Multiplication expressions include:

[0111] ;

[0112] Wherein, v2 is the output signal of the multiplier, K1 is a preset constant, and u is the output voltage of the power supply;

[0113] The voltage across the first resistor satisfies the resistor-voltage expression;

[0114] The resistance-voltage expression includes:

[0115] ;

[0116] Wherein, u-v2 represents the voltage across the first resistor;

[0117] The input current of the equivalent circuit of the second-order magnetically controlled memristor satisfies the current expression;

[0118] The current expression includes:

[0119] ;

[0120] Wherein, i is the input current of the equivalent circuit of the second-order magnetically controlled memristor, and R1 is the resistance value of the first resistor;

[0121] The exascale value of the second-order magnetically controlled memristor satisfies the exascale value expression;

[0122] The billion derivative expressions include:

[0123] ;

[0124] Where W is the exascale value of the second-order magnetically controlled memristor.

[0125] Specifically, the multiplier can multiply the magnetic flux characterization signal and the output voltage of the power supply to obtain v2, which satisfies the above multiplication expression, and is given by Figure 1 and Figure 2It can be seen that since the current supplied to the second transistor is approximately zero, the current i flowing through the equivalent circuit is the current flowing through the first resistor, so that the voltage across the first resistor satisfies the above resistance-voltage expression, and thus the above current expression is obtained in combination with Ohm's law, and then converted to the above exascale expression, and by comparing the exascale expression with the above voltage-current characteristics, it can be obtained that a1=1 / R1, a2=-K1 / R1R2C1 in the voltage-current characteristics.

[0126] Specifically, it can be seen from the above calculation process that the equivalent circuit in the embodiment of the present invention can simulate the resistance characteristics of the second-order magnetoresistive memristor with high accuracy.

[0127] In addition, as an optional embodiment, it can be intuitively seen from the above exascale value expression that the exascale value of the second-order magnetoresistive memristor is related to the resistance value of the first resistor, the resistance value of the second resistor and the capacitance value of the first capacitor, that is, by adjusting the values ​​of the first resistor, the second resistor and the first capacitor, the resistance characteristics of the second-order magnetoresistive memristor can be changed. Therefore, in order to flexibly adjust the exascale value of the second-order magnetoresistive memristor, the first resistor and the second resistor in the embodiment of the present invention can be variable resistors, and the first capacitor is a variable capacitor, so that it is convenient to change the exascale value of the second-order magnetoresistive memristor by adjusting the variable resistor and the variable capacitor.

[0128] In order to solve the above technical problems, the present invention further provides a chaotic circuit, including an equivalent circuit of the second-order magnetically controlled memristor in the above-mentioned embodiment.

[0129] Specifically, a chaotic circuit is an electronic circuit that can produce chaotic phenomena. Chaotic phenomena have the characteristics of deterministic non-periodic behavior and the trajectory determined by the signal and its derivative in the phase space is within a range. The basic components of chaotic circuits: nonlinear unit circuit: This is the key component of chaotic circuits. Common nonlinear unit circuits include analog multipliers, Chua diode circuits, absolute value operation circuits, and exponential operation circuits. Nonlinear elements make the relationship between the output and input of the circuit not a simple linear relationship, which can produce complex, non-periodic chaotic behavior. Linear unit circuit: includes basic linear elements such as resistors, capacitors, and inductors. These elements interact with nonlinear elements to jointly determine the overall characteristics of the circuit and the manifestation of chaotic behavior.

[0130] Among them, typical chaotic circuits include Chua's circuit:

[0131] Chua's circuit is one of the most representative chaotic circuits. It consists of two capacitors, an inductor, an active resistor, and a negative impedance converter (used to simulate Chua's diode) consisting of two diodes, some linear resistors, and an operational amplifier. Chua's circuit is simple and has rich chaotic mechanics characteristics. Its theoretical analysis, numerical simulation, and experimental demonstration can be well matched, so it has become a practical system and example for studying chaos theory. On this basis, dual Chua's circuit, deformed Chua's circuit, multi-scroll Chua's circuit, etc. have also been studied.

[0132] The specific working principle of chaotic circuits is as follows: The working principle of chaotic circuits is based on nonlinear dynamics. The components in the circuit interact with each other, making the state variables of the circuit (such as voltage, current, etc.) show complex and non-periodic behavior over time. This behavior is very sensitive to the initial conditions, and even a small change in the initial conditions will lead to a large difference in the output results of the circuit.

[0133] For the introduction of the chaotic circuit provided by the embodiment of the present invention, please refer to the embodiment of the equivalent circuit of the second-order magnetically controlled memristor mentioned above, and the embodiment of the present invention will not be described in detail here.

[0134] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same and similar parts between the embodiments can be referred to each other. It should also be noted that in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also other elements that are not explicitly listed, or also include elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or equipment including the element.

[0135] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An equivalent circuit of a second-order magnetically controlled memristor, It is characterized in that It includes a power supply, an integrator, a multiplier and a first resistor; The output end of the power supply is respectively connected to the input end of the integrator and the first end of the first resistor, the output end of the integrator is connected to the input end of the filter circuit, the output end of the filter circuit and the output end of the power supply are both connected to the input end of the multiplier, and the common end formed by the output end of the multiplier and the second end of the first resistor serves as the output end of the equivalent circuit; The integrator is used to integrate the output voltage of the power supply and generate a magnetic flux characterization signal; The multiplier is used to multiply the output voltage of the power supply by the magnetic flux characterization signal to generate a current that meets the target characteristics; The target characteristic refers to the voltage-current characteristic of the second-order magnetically controlled memristor.

2. The equivalent circuit of the second-order magnetically controlled memristor according to claim 1, It is characterized in that The integrator includes an operational amplifier, a first capacitor and a second resistor; The first end of the second resistor serves as the input end of the integrator, the second end of the second resistor is respectively connected to the input end of the operational amplifier and the first end of the first capacitor, the control end of the operational amplifier is used to connect to the bias voltage, the ground end of the operational amplifier is grounded, and the second end of the first capacitor is connected to the output end of the operational amplifier.

3. The equivalent circuit of the second-order magnetically controlled memristor according to claim 2, It is characterized in that The operational amplifier includes a first transistor, a second transistor and a third resistor; The first end of the third resistor serves as a positive voltage terminal, the second end of the third resistor and the input end of the second transistor serve as the output end of the operational amplifier, the control end of the second transistor serves as the input end of the operational amplifier, the output end of the second transistor is connected to the input end of the first transistor, the control end of the first transistor serves as a bias voltage terminal, and the output end of the first transistor is grounded.

4. The equivalent circuit of the second-order magnetically controlled memristor according to claim 3, It is characterized in that The equivalent circuit of the second-order magnetically controlled memristor also includes a filtering circuit; The input end of the filter circuit is connected to the output end of the operational amplifier, and the output end of the filter circuit is connected to the input end of the multiplier.

5. The equivalent circuit of the second-order magnetically controlled memristor according to claim 4, It is characterized in that The filtering circuit includes a second capacitor and a fourth resistor; The first end of the second capacitor serves as the input end of the filter circuit, the common end of the second end of the second capacitor and the first end of the fourth resistor serves as the output end of the filter capacitor, and the second end of the fourth resistor is grounded.

6. The equivalent circuit of the second-order magnetically controlled memristor according to claim 3, It is characterized in that The first transistor comprises an N-channel metal oxide semiconductor field effect transistor, and the second transistor comprises a P-channel metal oxide semiconductor field effect transistor; The source of the second transistor and the second end of the third resistor serve as the output end of the operational amplifier, the gate of the second transistor serves as the control end of the second transistor, the drain of the second transistor is connected to the drain of the first transistor, the gate of the first transistor serves as the bias voltage terminal, and the source of the first transistor is grounded.

7. The equivalent circuit of the second-order magnetically controlled memristor according to claim 2, It is characterized in that Target characteristics include: ； Among them, i(t) is the current of the second-order magnetic memristor, u(t) is the voltage of the second-order magnetic memristor, is the exaductance value of the second-order magnetically controlled memristor, a 1 is the first-order coefficient of the second-order magnetically controlled memristor, a 2 is the second-order coefficient of the second-order magnetically controlled memristor, is the magnetic flux of the second-order magnetically controlled memristor.

8. The equivalent circuit of the second-order magnetically controlled memristor according to any one of claims 2 to 7, It is characterized in that The output signal of the integrator satisfies the integral expression; The integral expression includes: ； Among them, v 1 is the output signal of the integrator, R 2 is the resistance of the second resistor, C 1 is the capacitance of the first capacitor, t is the time, τ is any time point between [0, t], is the time-varying magnetic flux.

9. The equivalent circuit of the second-order magnetically controlled memristor according to claim 8, It is characterized in that The output signal of the multiplier satisfies the multiplication expression; The multiplication expression includes: ； Among them, v 2 is the output signal of the multiplier, K 1 is a preset constant, and u is the output voltage of the power supply; The voltage across the first resistor satisfies the resistance-voltage expression; The resistance-voltage expression includes: ； Among them, uv 2 represents the voltage across the first resistor; The input current of the equivalent circuit of the second-order magnetically controlled memristor satisfies the current expression; The current expression includes: ； Wherein, i is the input current of the equivalent circuit of the second-order magnetically controlled memristor, R 1 is the resistance value of the first resistor; The exascale value of the second-order magnetically controlled memristor satisfies an exascale value expression; The billion derivative expression includes: ； Wherein, W is the exascale value of the second-order magnetically controlled memristor.

10. A chaotic circuit, It is characterized in that An equivalent circuit comprising the second-order magnetically controlled memristor as claimed in any one of claims 1 to 9.

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