Method and system for removing particles on wafer base in process cavity

Abstract

The invention discloses a method and a system for removing particles on a wafer base in a process cavity. The removing method comprises the following steps: providing an electrostatic chuck; the electrostatic chuck comprises an upper insulating layer, an electrode layer, a substrate and a lower insulating layer from top to bottom, determining parameters of particles to be removed of the wafer base; wherein the parameters of the particles to be removed comprise at least one of the number of the particles, the type of the particles and the size of the particles; based on the to-be-removed particle parameters, starting an electrostatic removal mode, and determining a starting voltage; the electrostatic chuck generates static electricity through starting voltage; and transferring the electrostatic chuck to a wafer base in the process cavity, and adsorbing particles on the wafer base. Therefore, particles on the surface of the wafer base can be removed by repeatedly using the electrostatic chuck, the product yield can be improved, the prevention and maintenance period can be effectively prolonged, the production efficiency can be improved, the manpower consumption can be reduced, and the cost can be reduced. In addition, the electrostatic chuck is stable and controllable in adsorption force, high in reliability, reusable and long in service life.

Description

Technical Field

[0001] The present application relates to the field of semiconductor process technology, and in particular to a method and system for removing particles on a wafer base in a process chamber. Background Art

[0002] The process chambers of semiconductor process-related atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), plasma dry etching (Plasma Dry Etch) and vacuum sputtering equipment are equipped with corresponding wafer susceptors to carry and fix the wafer. In the process engineering, residual contamination particles are easily generated on the wafer susceptor. When the accumulated number of these contamination particles is too large, it will directly affect the product yield.

[0003] The industry usually adopts the preventive maintenance (PM) method to remove the contaminants generated in these processes by opening the process chamber regularly. The entire PM process, including opening the process chamber, removing contaminants, closing the process chamber, vacuum testing, and system debugging, usually takes 6 to 8 hours, which seriously affects production efficiency, consumes manpower, and is not conducive to cost control. Summary of the invention

[0004] In order to solve at least one problem existing in the prior art, the purpose of the present application is to provide a method and system for removing particles on a wafer base in a process chamber, which can reusably use an electrostatic chuck to remove particles on the surface of the wafer base, which can not only improve product yield, effectively extend the preventive maintenance cycle, and improve production efficiency, but also reduce manpower consumption, thereby helping to reduce costs. In addition, the electrostatic chuck has a stable and controllable adsorption force, high reliability, and is reusable and has a long service life.

[0005] To achieve the above-mentioned purpose, the present application provides a method for removing particles on a wafer pedestal in a process chamber, the method comprising: An electrostatic chuck is provided; wherein the electrostatic chuck comprises, from top to bottom, an upper insulating layer, an electrode layer, a substrate and a lower insulating layer; Determining the parameters of particles to be removed from the wafer base; wherein the parameters of particles to be removed include at least one of the number of particles, the type of particles, and the size of particles; Based on the parameters of the particles to be removed, starting the electrostatic removal mode and determining the starting voltage; The electrostatic chuck generates static electricity through the starting voltage; The electrostatic chuck is transferred to the wafer base in the process chamber to absorb particles on the wafer base.

[0006] Furthermore, the step of determining the parameters of the particles to be removed from the wafer base includes: Acquiring a surface image of a wafer on the wafer base; Based on the surface image, it is determined whether the particle type of the wafer base includes broken fragments.

[0007] Furthermore, the step of starting the electrostatic removal mode based on the parameters of the particles to be removed and determining the starting voltage includes: In response to determining that the particle type includes fragments, a fragment removal mode is initiated and the activation voltage is determined to be within a first voltage threshold range.

[0008] Furthermore, the step of determining the parameters of the particles to be removed from the wafer base includes: Transferring a test wafer into the process chamber at a preset frequency, and placing the test wafer on the wafer pedestal; After the test wafer is transferred out of the process chamber, the number of particles on the first surface of the test wafer is determined by laser scanning; wherein the first surface is the surface where the test wafer contacts the wafer base.

[0009] Furthermore, during the process of transferring the test wafer, a robot arm used for the transfer only contacts with the second surface of the test wafer.

[0010] Furthermore, the step of starting the electrostatic removal mode based on the parameters of the particles to be removed and determining the starting voltage includes: In response to determining that the particle count is greater than a first particle count threshold, or, In response to determining that the particle type does not include fragments and the particle count is greater than a first particle count threshold, Then, the conventional removal mode is started, and it is determined that the start voltage is within the second voltage threshold range.

[0011] Furthermore, after the step of determining the parameters of the particles to be removed from the wafer base, the method further includes: In response to determining that the particle count is less than or equal to the first particle count threshold, or, In response to determining that the particle type does not include fragments and the particle quantity is less than or equal to the first particle quantity threshold, Then the static electricity removal mode is exited and the process operation mode is entered.

[0012] Furthermore, after the step of adsorbing particles on the wafer base, the method further comprises: neutralizing static electricity of the electrostatic chuck; The particles on the surface of the electrostatic chuck are removed by cleaning and / or rolling brushing.

[0013] Furthermore, the electrostatic chuck is configured to be circular, and the diameter is configured to be 100 mm, 150 mm, 200 mm or 300 mm.

[0014] To achieve the above-mentioned purpose, the present application also provides a system for removing particles on a wafer pedestal in a process chamber, the system comprising: An electrostatic chuck comprises, from top to bottom, an upper insulating layer, an electrode layer, a substrate and a lower insulating layer; A determination module, used to determine the parameters of the particles to be removed of the wafer base, and based on the parameters of the particles to be removed, start the electrostatic removal mode and determine the starting voltage; wherein the parameters of the particles to be removed include at least one of the number of particles, the type of particles, and the size of particles; A voltage module, used for providing the starting voltage to the electrostatic chuck to generate static electricity; The conveying module is used to convey the electrostatic chuck to the wafer base in the process chamber to absorb the particles on the wafer base.

[0015] The method and system for removing particles on a wafer base in a process chamber of the present application provide an electrostatic chuck, determine the parameters of the particles to be removed from the wafer base, and based on the parameters of the particles to be removed, start the electrostatic removal mode, determine the starting voltage, and generate static electricity through the electrostatic chuck via the starting voltage, and transfer the electrostatic chuck to the wafer base in the process chamber to adsorb the particles on the wafer base. Thus, the electrostatic chuck can be reused to remove particles from the surface of the wafer base, which can not only improve the product yield, effectively extend the preventive maintenance cycle, and improve production efficiency, but also reduce manpower consumption, thereby helping to reduce costs. In addition, the electrostatic chuck has a stable and controllable adsorption force, high reliability, and is reusable and has a long service life.

[0016] Other features and advantages of the present application will be set forth in the following description, and in part will become apparent from the description, or may be understood by practicing the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings are used to provide a further understanding of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the present application and do not constitute a limitation of the present application. In the accompanying drawings: Figure 1 is a flow chart of a method for removing particles on a wafer pedestal in a process chamber according to an embodiment of the present application; Figure 2 is a schematic diagram of a stacked structure of an electrostatic chuck according to an embodiment of the present application; Figure 3 is a flow chart of a method for removing particles on a wafer pedestal in a process chamber according to another embodiment of the present application; Figure 4 is a flow chart of a method for removing particles on a wafer pedestal in a process chamber according to another embodiment of the present application; Figure 5 is a flow chart of adsorbed particle cleaning according to an embodiment of the present application; Figure 6 It is a structural block diagram of a system for removing particles on a wafer base in a process chamber according to an embodiment of the present application. DETAILED DESCRIPTION

[0018] The embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be construed as being limited to the embodiments described herein. Instead, these embodiments are provided to provide a more thorough and complete understanding of the present application. It should be understood that the drawings and embodiments of the present application are only for exemplary purposes and are not intended to limit the scope of protection of the present application.

[0019] The term "including" and its variations used herein are open inclusions, i.e., "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The relevant definitions of other terms will be given in the following description.

[0020] It should be noted that the concepts such as "first" and "second" mentioned in this application are only used to distinguish different devices, modules, units or data, and are not used to limit the order or interdependence of the functions performed by these devices, modules, units or data.

[0021] It should be noted that the modifications of "one" and "plurality" mentioned in this application are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more". "Plurality" should be understood as two or more.

[0022] Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings.

[0023] First of all, it should be noted that the semiconductor process equipment applicable to the method for removing particles on the wafer base in the process chamber of the embodiment of the present application can be atmospheric pressure chemical vapor deposition equipment, low pressure chemical vapor deposition equipment, plasma chemical vapor deposition equipment, plasma dry etching equipment or vacuum sputtering equipment, or other applicable semiconductor process equipment. This application does not make specific restrictions on this.

[0024] Furthermore, the removal of the polluted particles may be performed in a low-pressure environment or in a normal-pressure environment, and this application does not impose any specific limitation on this.

[0025] It is understandable that the wafer base applicable to the method may be a base used for fixing the wafer with a conventional clamp, or a base (E-chuck) for fixing the wafer with electrostatic adsorption. The present application does not impose any specific limitation on this.

[0026] Figure 1 The flowchart of the method for removing particles on the wafer base in the process chamber according to the embodiment of the present application is as follows. Figure 1 , the method for removing particles on the wafer base in the process chamber of the present application is described in detail.

[0027] In step 101, an electrostatic chuck is provided.

[0028] Among them, Figure 2 As shown, the electrostatic chuck 200 includes from top to bottom an upper insulating layer 201, an electrode layer 202, a substrate 203 and a lower insulating layer 204. Specifically, the electrostatic chuck 200 includes a substrate 203, on which the electrode layer 202 is disposed, and the insulating layer covers the upper and lower surfaces of the substrate 203 on which the electrode layer 202 is disposed.

[0029] In the embodiment of the present application, the electrostatic chuck is configured to be circular, and the diameter is configured to be 100 mm, 150 mm, 200 mm or 300 mm. Specifically, the electrostatic chuck of the corresponding diameter can be selected according to the wafer diameter of the production line.

[0030] In the embodiment of the present application, the thickness range of the electrostatic chuck is configured to be approximately 760µm, and the preferred thickness ensures that it has sufficient ability to support and transfer wafer products.

[0031] In step 102 , parameters of particles to be removed from a wafer pedestal are determined.

[0032] The particle parameters to be removed include at least one of the number of particles, the type of particles (which may specifically include conventional contaminated particles, fragments, etc.), and the particle size. In a specific example, the above-mentioned particle parameters to be removed of particles on the wafer base can be determined by image acquisition and recognition, laser scanning, etc.

[0033] In step 103, based on the parameters of the particles to be removed, the electrostatic removal mode is started and the starting voltage is determined.

[0034] That is to say, after the parameters of the particles to be removed of the wafer base are determined, the magnitude of the starting voltage is determined according to the parameters of the particles to be removed through corresponding methods and strategies.

[0035] In step 104, the electrostatic chuck generates static electricity via a starting voltage.

[0036] In a specific example, the starting voltage may be 50 V, 100 V, 200 V, ..., 800 V or 1000 V. That is, different electrostatic adsorption forces are generated by multi-stage starting voltages, so as to subsequently remove contamination particles of different sizes on the surface of the wafer base.

[0037] In step 105 , the electrostatic chuck is transferred to the wafer pedestal in the process chamber to absorb particles on the wafer pedestal.

[0038] Specifically, the electrostatic chuck can be configured to be of a size comparable to that of the corresponding wafer product, and the electrostatic chuck can be transferred to the wafer base in the process chamber by a conveying device for transferring the corresponding wafer product, so as to utilize the principle of electrostatic adsorption to adsorb particles on the wafer base.

[0039] In a specific embodiment, an electrostatic chuck having a certain electrostatic adsorption force based on a preset starting voltage is placed in a wafer cassette. When particle removal is required, the corresponding electrostatic chuck is transferred to the base in the process chamber by the robotic arm of the process equipment, and then the electrostatic chuck is transferred to the storage cassette outside the process chamber by the robotic arm, and the contaminated particles adsorbed on the surface of the electrostatic chuck can be removed subsequently. Thus, the contaminated particles on the surface of the base can be removed by the electrostatic adsorption force of the electrostatic chuck, reducing the risk of excessive contaminated particles on the base, thereby reducing the frequency of preventive maintenance, improving production efficiency, and reducing manpower consumption, thereby helping to reduce costs. In addition, the adsorption force of the electrostatic chuck is stable and controllable, with high reliability, and the power can be reasonably configured, which is conducive to energy saving, and it can be reused and has a long service life.

[0040] In the present application embodiment, Figure 3 As shown, step 102 may include: Step 301, obtaining a surface image of a wafer on a wafer base.

[0041] Step 302 : determining whether the particle type of the wafer base includes broken pieces based on the surface image.

[0042] In this embodiment, after step 102, the method may further include: Step 303 , in response to determining that the particle type includes fragments, starting a fragment removal mode, and determining that the start voltage is within a first voltage threshold range.

[0043] That is, if it is determined that there are broken fragments on the wafer base, the broken fragment removal mode is started, and in the broken fragment removal mode, the start voltage is set to a preset value in the first voltage threshold range.

[0044] In the present application embodiment, Figure 4 As shown, step 102 may include: Step 401 , transferring a test wafer into a process chamber at a preset frequency, and placing the test wafer on a wafer pedestal.

[0045] Step 402 : After the test wafer is transferred out of the process chamber, the number of particles on the first surface of the test wafer is determined by laser scanning.

[0046] It should be noted that the test wafer includes two surfaces, namely a first surface and a second surface. The first surface is the surface where the test wafer contacts the wafer base. When performing the particle count test, the particle count on the first surface is determined.

[0047] Furthermore, during the process of transferring the test wafer, the robot arm used for transferring only contacts with the second surface of the test wafer.

[0048] That is, during the transfer process, the robot does not contact the first surface of the test wafer, but only contacts the second surface, thereby preventing particles on the robot from contaminating the first surface and introducing test errors, thereby helping to improve the accuracy of particle quantity testing.

[0049] It is understandable that in this example, after the robot absorbs the test wafer, it may be carried and flipped inside or outside the cavity, and the present application does not impose any specific restrictions on the specific transmission method.

[0050] In this embodiment, after step 102, the method may include: Step 403 , in response to determining that the particle type does not include fragments and the particle quantity is greater than a first particle quantity threshold, starting a conventional removal mode and determining that the start voltage is within a second voltage threshold range.

[0051] That is to say, in this embodiment, considering the fragmentation factor, under the premise that the particle type does not include fragmentation, if it is determined that the particle quantity is greater than the first particle quantity threshold, that is, when the particle quantity is too large, the above-mentioned conventional removal mode is started. In this conventional removal mode, the start voltage is set to a preset value in the first voltage threshold range.

[0052] In the case of fragments, even if the number of particles is too large, step 303 is performed to start the fragment removal mode. That is, the fragment removal mode has a higher priority than the normal removal mode.

[0053] It should be noted that the second voltage threshold range is different from the first voltage threshold range. In a specific example, the maximum value of the second voltage threshold range is less than or equal to the minimum value of the first voltage threshold range.

[0054] In another embodiment, step 403 may also be specifically implemented as: in response to determining that the particle quantity is greater than a first particle quantity threshold, starting the conventional removal mode, and determining that the start voltage is within a first voltage threshold range.

[0055] That is, the strategy does not consider fragments, which can be removed using other strategies. In this case, once it is determined that the number of particles is too high, the normal removal mode is activated.

[0056] Furthermore, after step 102, the method may further include: Step 404 , in response to determining that the particle type does not include fragments and the particle quantity is less than or equal to a first particle quantity threshold, exiting the static electricity removal mode and entering the process operation mode.

[0057] That is to say, in this embodiment, the fragmentation factor is taken into consideration. On the premise that the particle type does not include fragments, when the number of particles on the wafer base is small, it is determined that electrostatic removal is not required, and the process can continue to be performed on the wafer.

[0058] In the case of fragments, even if the number of particles is small, step 303 is executed to start the fragment removal mode.

[0059] In another embodiment, step 404 may also be specifically implemented as: in response to determining that the particle quantity is less than or equal to the first particle quantity threshold, exiting the electrostatic removal mode and entering the process operation mode.

[0060] That is, the strategy does not consider the fragmentation factor, and the fragmentation can be removed by other strategies. In this case, once it is determined that the number of particles is too small, the static removal mode is exited and the corresponding process of the wafer is continued.

[0061] In the present application embodiment, Figure 5 As shown, after step 105, the method further includes: Step 501, neutralize the static electricity of the electrostatic chuck.

[0062] Step 502, remove particles on the surface of the electrostatic chuck by cleaning, or by rolling brushing, or by cleaning and rolling brushing.

[0063] In a specific example, after the electrostatic chuck absorbs the particles on the wafer base, it can be placed in a wafer cassette first, and then the positive and negative charges of the capacitor inside the electrostatic chuck are neutralized to release the internal electric field, and then a chemical cleaning step is adopted, using SC-1 solution (NH4OH-H2O2 solution) to remove the contaminated particles, and a polymer roller used in the chemical mechanical polishing (CMP) process is used to brush off the contaminated particles on the surface of the electrostatic chuck. After the surface contaminants of the electrostatic chuck are cleaned, it can be reused to remove the contaminated particles on the surface of the base, and it has a long service life and high reliability. Therefore, compared with the method of removing particles by sticking with tape in the related art, the method of the present application can reduce the use of consumables and help to further reduce costs.

[0064] In summary, according to the method for removing particles on a wafer base in a process chamber of an embodiment of the present application, an electrostatic chuck is provided, and the parameters of the particles to be removed of the wafer base are determined, and based on the parameters of the particles to be removed, an electrostatic removal mode is started, a starting voltage is determined, and static electricity is generated by the electrostatic chuck through the starting voltage, and the electrostatic chuck is transferred to the wafer base in the process chamber to adsorb the particles on the wafer base. Thus, the electrostatic chuck can be reused to remove particles on the surface of the wafer base, which can not only improve the product yield, effectively extend the preventive maintenance cycle, and improve production efficiency, but also reduce manpower consumption, thereby helping to reduce costs. In addition, the electrostatic chuck has a stable and controllable adsorption force, high reliability, and is reusable and has a long service life.

[0065] Figure 6 This is a structural block diagram of a system for removing particles on a wafer base in a process chamber according to an embodiment of the present application. Figure 6 As shown, a system 600 for removing particles on a wafer pedestal in a process chamber includes an electrostatic chuck 601 , a determination module 602 , a voltage module 603 and a transmission module 604 .

[0066] The electrostatic chuck 601 includes, from top to bottom, an upper insulating layer, an electrode layer, a substrate, and a lower insulating layer. The determination module 602 is used to determine the parameters of the particles to be removed from the wafer base, and based on the parameters of the particles to be removed, start the electrostatic removal mode and determine the starting voltage; wherein the parameters of the particles to be removed include at least one of the number of particles, the type of particles, and the size of the particles. The voltage module 603 is used to provide a starting voltage to the electrostatic chuck 601 to generate static electricity. The transmission module 604 is used to transmit the electrostatic chuck 601 to the wafer base in the process chamber to adsorb the particles on the wafer base.

[0067] In the embodiment of the present application, the determination module 602 includes a fragment determination submodule (not shown in the figure). The fragment determination submodule is used to: obtain a surface image of a wafer on a wafer base; and determine whether the particle type of the wafer base includes fragments based on the surface image.

[0068] In the embodiment of the present application, the determination module 602 is specifically configured to: in response to determining that the particle type includes fragments, start the fragment removal mode, and determine that the start-up voltage is within a first voltage threshold range.

[0069] In the embodiment of the present application, the determination module 602 includes a transmission module (not shown in the figure). The transmission module is used to: transmit the test wafer into the process chamber at a preset frequency, and place the test wafer on the wafer base through the first surface contact; after the test wafer is transmitted out of the process chamber, the number of particles on the first surface is determined by laser scanning.

[0070] Furthermore, the conveying module includes a robot (not shown in the figure). The robot is used to: during the process of conveying the test wafer, the robot only contacts the second surface of the test wafer.

[0071] In an embodiment of the present application, the determination module 602 is specifically used to: in response to determining that the number of particles is greater than a first particle number threshold, or in response to determining that the particle type does not include fragments and the number of particles is greater than the first particle number threshold, start the conventional removal mode and determine that the start-up voltage is within a second voltage threshold range.

[0072] Furthermore, the determination module 602 is further configured to: in response to determining that the particle quantity is less than or equal to a first particle quantity threshold, exit the electrostatic removal mode and enter the process operation mode.

[0073] In the embodiment of the present application, the system 600 for removing particles on the wafer base in the process chamber also includes a cleaning module (not shown in the figure). After adsorbing the particles on the wafer base, the cleaning module is used to: neutralize the static electricity of the electrostatic suction cup 601; remove the particles on the surface of the electrostatic suction cup 601 by cleaning, or by rolling brush, or by cleaning and rolling brush.

[0074] It should be noted that the explanation of the method for removing particles on the wafer susceptor in the process chamber in the above embodiment is also applicable to the system for removing particles on the wafer susceptor in the process chamber in the above embodiment, and will not be repeated here.

[0075] It should be understood that, although the steps in the flowcharts of the accompanying drawings of the specification are displayed in sequence according to the indications of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowchart may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these sub-steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the sub-steps or stages of other steps.

[0076] It should be noted that the specific numerical values ​​mentioned above are only used as examples to illustrate the implementation of the present application in detail, and should not be understood as limiting the present application. In other examples or implementations or embodiments, other numerical values ​​can be selected according to the present application, and are not specifically limited here.

[0077] Those skilled in the art can understand that the above are only preferred embodiments of the present application and are not intended to limit the present application. Although the present application is described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions recorded in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A method for removing particles on a wafer base in a process chamber, characterized in that: The method comprises: An electrostatic chuck is provided; wherein the electrostatic chuck comprises, from top to bottom, an upper insulating layer, an electrode layer, a substrate and a lower insulating layer; Determining the parameters of particles to be removed from the wafer base; wherein the parameters of particles to be removed include at least one of the number of particles, the type of particles, and the size of particles; Based on the parameters of the particles to be removed, starting the electrostatic removal mode and determining the starting voltage; The electrostatic chuck generates static electricity through the starting voltage; The electrostatic chuck is transferred to the wafer base in the process chamber to absorb particles on the wafer base.

2. The method for removing particles on a wafer base in a process chamber according to claim 1, characterized in that: The step of determining the parameters of the particles to be removed from the wafer base comprises: Acquiring a surface image of a wafer on the wafer base; Based on the surface image, it is determined whether the particle type of the wafer base includes broken fragments.

3. The method for removing particles on a wafer base in a process chamber according to claim 1, characterized in that: The step of starting the electrostatic removal mode based on the parameters of the particles to be removed and determining the starting voltage comprises: In response to determining that the particle type includes fragments, a fragment removal mode is initiated and the activation voltage is determined to be within a first voltage threshold range.

4. The method for removing particles on a wafer base in a process chamber according to claim 1, characterized in that: The step of determining the parameters of the particles to be removed from the wafer base comprises: Transferring a test wafer into the process chamber at a preset frequency, and placing the test wafer on the wafer pedestal; After the test wafer is transferred out of the process chamber, the number of particles on the first surface of the test wafer is determined by laser scanning; wherein the first surface is the surface where the test wafer contacts the wafer base.

5. The method for removing particles on a wafer base in a process chamber according to claim 4, characterized in that: During the transfer of the test wafer, the robot arm used for the transfer only contacts the second surface of the test wafer.

6. The method for removing particles on a wafer pedestal in a process chamber according to claim 1, characterized in that: The step of starting the electrostatic removal mode based on the parameters of the particles to be removed and determining the starting voltage comprises: In response to determining that the particle count is greater than a first particle count threshold, or, In response to determining that the particle type does not include fragments and the particle count is greater than a first particle count threshold, Then, the conventional removal mode is started, and it is determined that the start voltage is within the second voltage threshold range.

7. The method for removing particles on a wafer base in a process chamber according to claim 6, characterized in that: After the step of determining the parameters of the particles to be removed from the wafer base, the method further comprises: In response to determining that the particle count is less than or equal to the first particle count threshold, or, In response to determining that the particle type does not include fragments and the particle quantity is less than or equal to the first particle quantity threshold, Then the static electricity removal mode is exited and the process operation mode is entered.

8. The method for removing particles on a wafer pedestal in a process chamber according to claim 1, characterized in that: After the step of adsorbing particles on the wafer base, the method further comprises: neutralizing static electricity of the electrostatic chuck; The particles on the surface of the electrostatic chuck are removed by cleaning and / or rolling brushing.

9. The method for removing particles on a wafer pedestal in a process chamber according to any one of claims 1 to 8, characterized in that: The electrostatic chuck is configured to be circular, and the diameter is configured to be 100 mm, 150 mm, 200 mm or 300 mm.

10. A system for removing particles on a wafer base in a process chamber, characterized in that: The system comprises: An electrostatic chuck comprises, from top to bottom, an upper insulating layer, an electrode layer, a substrate and a lower insulating layer; A determination module, used to determine the parameters of the particles to be removed of the wafer base, and based on the parameters of the particles to be removed, start the electrostatic removal mode and determine the starting voltage; wherein the parameters of the particles to be removed include at least one of the number of particles, the type of particles, and the size of particles; A voltage module, used for providing the starting voltage to the electrostatic chuck to generate static electricity; The conveying module is used to convey the electrostatic chuck to the wafer base in the process chamber to absorb the particles on the wafer base.

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