Substrate conversion device and preparation method thereof
By designing a substrate conversion device for converting grooves on large-size substrate equipment, the problem of processing small-size substrates on high-precision equipment is solved, efficient and accurate substrate processing and transportation is achieved, production costs are reduced and production costs are increased Productivity.
Patent Information
- Application Number
- CN202411144504.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-20
- Publication Date
- 2024-12-13
AI Technical Summary
The prior art cannot effectively process small-sized substrates on large-sized substrate equipment with high precision and high process capabilities, resulting in limited technical development of small-sized substrates.
A substrate conversion device is designed to ensure accurate alignment of patterns or devices by providing conversion grooves on the first substrate for carrying the second substrate and using a positioning and alignment system of existing equipment, thereby Process or transport small-sized substrates on large-sized equipment.
It realizes high-precision processing and transport of small-sized substrates without customization of special equipment, saves production costs and improves production efficiency, and has a simple device structure and is directly prepared on the substrate production line.
Smart Images
Figure CN119133062A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of substrate processing, and in particular to a substrate conversion device and a preparation method thereof. Background Art
[0002] As substrates develop towards larger sizes, the processing and manufacturing capabilities of various types of equipment used for large-size substrates are also being improved, while the technological development of equipment used for small-size substrates has been neglected. For example, there is no lithography machine specifically for two-inch substrates used for 100nm process.
[0003] However, during the substrate processing, a special carrier is required to support the substrate. In addition, the carrier is usually equipped with a precise positioning and alignment system to ensure that the pattern or device on the substrate can be accurately aligned with the corresponding part on the equipment. Therefore, in the related art, it is also impossible to prepare small-sized substrates on large-sized substrate equipment with high precision and high process capability, which greatly limits the technical development of small-sized substrates. Summary of the invention
[0004] In order to solve the above technical problems, an embodiment of the present application provides a substrate conversion device and a preparation method thereof.
[0005] In a first aspect, a substrate conversion device provided in an embodiment of the present application includes: a first substrate, the first substrate includes a first surface and a second surface arranged opposite to each other, the first substrate also includes at least one third surface recessed in the first surface and a fourth surface connecting the first surface and the corresponding third surface, the third surface and the connected fourth surface are arranged to form a conversion groove, and the conversion groove is used to support the second substrate, wherein the third surface abuts against the bottom surface of the second substrate, and the fourth surface abuts against the side surface of the second substrate.
[0006] In some embodiments, the first substrate has a plurality of the conversion grooves.
[0007] In some embodiments, a height of the fourth surface is greater than or equal to a height of the second substrate.
[0008] In some embodiments, the first substrate further includes a fifth surface connecting the first surface and the second surface;
[0009] The shape of the fifth surface is the same as that of the fourth surface, or the shape of the fifth surface is different from that of the fourth surface.
[0010] In some embodiments, at least some of the conversion grooves are evenly spaced around the axis of the first substrate.
[0011] In some embodiments, all of the conversion grooves have the same shape and are equal in size.
[0012] In some embodiments, at least some of the conversion grooves have different shapes, and / or at least some of the conversion grooves have different sizes.
[0013] In some embodiments, the first substrate is a silicon substrate.
[0014] In a second aspect, a method for preparing a substrate conversion device provided in an embodiment of the present application includes:
[0015] providing a first substrate;
[0016] forming a pattern layer on the first surface of the first substrate;
[0017] The first surface not covered by the pattern layer is etched to form at least one conversion groove.
[0018] In some embodiments, forming a patterned layer on the first surface of the first substrate includes:
[0019] Coating a photoresist on the first surface;
[0020] The photoresist is exposed and developed to form the pattern layer.
[0021] Compared with the prior art, the beneficial features of the embodiments of the present application are: the substrate conversion device and the preparation method thereof, the substrate conversion device includes a first substrate, the first substrate includes a first surface and a second surface arranged opposite to each other, the first substrate also includes at least one third surface recessed in the first surface and a fourth surface connecting the first surface and the corresponding third surface, the third surface and the connected fourth surface are surrounded to form a conversion groove, the conversion groove is used to carry the second substrate, wherein the third surface abuts the bottom surface of the second substrate, and the fourth surface abuts the side surface of the second substrate. Through the implementation method of the present application, at least one second substrate can be installed on the first substrate, so as to realize the processing or transportation of the second substrate on the equipment for processing or transporting the first substrate, without the need to customize special processing equipment or transportation equipment for the second substrate, saving production costs, and the substrate conversion device is made of substrates, which is not only convenient to obtain materials, but also simple in structure, and can be directly prepared on the substrate processing equipment without mechanical reprocessing, which not only has high processing accuracy, but also improves production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Figure 1 This is a schematic diagram of the use state of the substrate conversion device according to the embodiment of the present application;
[0023] Figure 2 for Figure 1 AA section diagram;
[0024] Figure 3 This is a schematic diagram of the use state of the substrate conversion device according to the embodiment of the present application;
[0025] Figure 4 This is a schematic diagram of the structure of an unprocessed first substrate in the method for preparing a substrate conversion device according to an embodiment of the present application;
[0026] Figure 5 for Figure 4 BB section diagram;
[0027] Figure 6 This is a schematic diagram of the intermediate structure obtained in step S12 in the method for preparing a substrate conversion device according to an embodiment of the present application;
[0028] Figure 7 for Figure 6 CC cross-section diagram;
[0029] Figure 8 This is a schematic diagram of the structure of a substrate conversion device according to an embodiment of the present application;
[0030] Fig. 9 for Figure 8 DD cross-section diagram;
[0031] Among them: 1-first substrate (101-first surface, 102-second surface, 103-third surface, 104-fourth surface, 105-conversion groove, 106-fifth surface), 2-second substrate, 3-graphic layer. DETAILED DESCRIPTION
[0032] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive.
[0033] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.
[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.
[0035] Please refer to Figures 1 to 3The substrate conversion device of the embodiment of the present application includes a first substrate 1. The first substrate 1 includes a first surface 101 and a second surface 102, and the first surface 101 and the second surface 102 are arranged opposite to each other. The first substrate 1 also includes a third surface 103 and a fourth surface 104, wherein there is at least one third surface 103, and the third surface 103 is recessed from the first surface 101 toward the second surface 102, and the fourth surface 104 is used to connect the first surface 101 and the corresponding third surface 103, and the third surface 103 and the connected fourth surface 104 are surrounded to form a conversion groove 105, and the conversion groove 105 is used to carry the second substrate 2. The third surface 103 abuts against the bottom surface of the second substrate 2, and the fourth surface 104 abuts against the side surface of the second substrate 2, so that the second substrate 2 is confined in the conversion groove 105.
[0036] In the embodiment of the present application, the first substrate 1 is a substrate that matches the processing equipment or the transfer equipment, that is, the positioning and alignment system can ensure that the pattern or device on the first substrate 1 can be accurately aligned with the corresponding part on the equipment.
[0037] The embodiment of the present application can install the second substrate 2 on the substrate conversion device, and then place the substrate conversion device loaded with the second substrate 2 on the carrier of the equipment, so that the pattern or device on the second substrate 2 can be accurately aligned with the corresponding part on the equipment through the positioning and alignment system, so as to realize the processing of the second substrate 2 on the equipment for processing the first substrate 1, and the transfer of the second substrate 2 on the equipment for transferring the first substrate 1, without the need to customize special processing equipment or transfer equipment for the second substrate 2, saving production costs, and solving the problem that small-sized substrates cannot be prepared on large-sized substrate equipment with high precision and high process capability. In addition, the substrate conversion device is directly made of substrates, which is not only convenient to obtain materials, but also simple in structure, and can be directly prepared on the substrate production line, using semiconductor process processing, without mechanical reprocessing, not only with high processing accuracy, but also able to match the wafer transfer requirements of high-precision devices, but also improves production efficiency.
[0038] As an example, the processing equipment can be suitable for processing an eight-inch substrate, that is, the first substrate 1 is an eight-inch substrate. The second substrate 2 is a two-inch substrate. The first substrate 1 is provided with at least one conversion groove 105, and the conversion groove 105 is arranged one-to-one with the second substrate 2. Please refer to Figures 1 to 3. Place the second substrate 2 on the substrate conversion device, and then place the substrate conversion device on the carrier of the original equipment. The positioning and alignment system of the original equipment can be used to accurately align the pattern or device on the second substrate 2 with the corresponding part on the equipment, so that the two-inch substrate can be processed on the equipment for processing eight-inch substrates. There is no need to customize special processing equipment for two-inch substrates, which saves production costs and solves the problem that two-inch substrates cannot be prepared on processing equipment for eight-inch substrates with high precision and high process capabilities. In addition, the substrate conversion device is directly made of eight-inch substrates, which is not only convenient to obtain materials, but also simple in structure. It can be directly prepared on the production line of eight-inch substrates, using semiconductor process processing, without the need for mechanical reprocessing, not only with high processing accuracy, but also with improved production efficiency.
[0039] As an example, the processing equipment may be a 100nm process 8-inch substrate lithography machine. That is, through the conversion device, it is possible to process a two-inch substrate on a 100nm process 8-inch substrate lithography machine, which can solve the problem of not having a 100nm process 2-inch substrate lithography machine.
[0040] It is understandable that the processing equipment in this application is prior art and will not be described in detail here. In other words, the carrier and positioning and alignment system of the processing equipment in this application are prior art and will not be described in detail here.
[0041] It should be noted that the size of the first substrate 1 is larger than the size of the second substrate 2. The above examples are for illustration only, and the present application does not limit the specific sizes of the first substrate 1 and the second substrate 2. As an example, the first substrate 1 can also be a six-inch substrate or a substrate larger than eight inches, and the second substrate 2 can also be a four-inch substrate, etc. The processing equipment can also be other equipment, for example, the processing equipment can also be an etcher, a coating machine, and other semiconductor and microelectronics equipment, which is not limited here.
[0042] In some preferred embodiments, the first substrate 1 is made of silicon. Specifically, the first substrate 1 may be a silicon wafer substrate.
[0043] In other embodiments, the first substrate 1 may be made of other materials, such as a glass substrate, which will not be described in detail herein.
[0044] In some preferred embodiments, the substrate conversion device has a plurality of conversion grooves 105. Specifically, the first substrate 1 includes a plurality of third surfaces 103, each of which is recessed from the first surface 101 toward the second surface 102, and the conversion grooves 105 are arranged one by one with the third surfaces 103. One third surface 103 and the connected fourth surface 104 together constitute one conversion groove 105.
[0045] In this embodiment, the second substrates 2 are arranged in one-to-one correspondence with the conversion grooves 105, so that the first substrate 1 can be used to carry multiple second substrates 2, thereby realizing batch production of multiple second substrates 2 and further improving production efficiency.
[0046] As an optional implementation, please refer to Figure 1 and Figure 2 The shape of each conversion groove 105 is the same, and the size of each conversion groove 105 is equal, thereby realizing batch production of multiple identical second substrates 2 and further improving production efficiency.
[0047] As an optional implementation, please refer to Figure 3 The shapes of some conversion grooves 105 may be different, and the sizes of some conversion grooves 105 may also be different, so that second substrates 2 of various sizes can be produced at the same time, further improving the compatibility and versatility of the equipment.
[0048] As an optional embodiment, the shape of each conversion groove 105 may be different. Alternatively, the shape of each conversion groove 105 may be the same, but the size of each conversion groove 105 is different, thereby achieving simultaneous production of multiple different second substrates 2, further improving the compatibility and versatility of the device.
[0049] In some preferred embodiments, please refer to Figure 1 At least part of the conversion grooves 105 are evenly spaced around the axis of the first substrate 1, so that the space is more fully and effectively utilized, so that the substrate conversion device can place more second substrates 2, further improving production efficiency.
[0050] In other embodiments, the conversion grooves 105 may also be distributed in other ways.
[0051] It should be noted that the number, shape, size and specific distribution of the conversion grooves 105 can be set according to actual conditions and will not be elaborated here.
[0052] Specifically, the first substrate 1 further includes a fifth surface 106 , and the fifth surface 106 connects the first surface 101 and the second surface 102 .
[0053] In some preferred embodiments, the shape of the fifth surface 106 is the same as that of the fourth surface 104. As an example, the first substrate 1 may be a circular silicon wafer substrate with a diameter of six inches, wherein at least one conversion groove 105 may be a conversion groove 105 with a diameter of two inches and a circular cross-sectional shape, and the second substrate 2 corresponding to the conversion groove 105 is a circular silicon wafer substrate with a diameter of two inches, so that a circular silicon wafer substrate with a diameter of two inches can be processed on a processing device for a circular silicon wafer substrate with a diameter of six inches.
[0054] In some other preferred embodiments, the shape of the fifth surface 106 is different from the shape of the fourth surface 104. As an example, the first substrate 1 may be a circular silicon wafer substrate with a diameter of six inches, wherein at least one conversion groove 105 may be a conversion groove 105 with a square cross-sectional shape and a side length of four inches, and the second substrate 2 corresponding to the conversion groove 105 may be a square glass substrate with a side length of four inches, so that the square glass substrate with a side length of four inches can be processed on a processing device for a circular silicon wafer substrate with a diameter of six inches.
[0055] It is understandable that the material of the second substrate 2 can be the same as that of the first substrate 1, or the material of the second substrate 2 can be different from that of the first substrate 1. The shape of the second substrate 2 can be the same as that of the first substrate 1, or the shape of the second substrate 2 can be different from that of the first substrate 1, which will not be elaborated here.
[0056] In some preferred embodiments, the cross-sectional shape of the conversion groove 105 matches the cross-sectional shape of the second substrate 2, and the height of the fourth surface 104 can be greater than or equal to the height of the corresponding second substrate 2. In other words, the groove depth of the conversion groove 105 can be greater than or equal to the height of the corresponding second substrate 2, thereby more effectively confining the second substrate 2 within the corresponding conversion groove 105 and better protecting the second substrate 2.
[0057] The method for preparing a substrate conversion device according to an embodiment of the present application can be applied to preparing any of the above-mentioned substrate conversion devices.
[0058] The method for preparing the substrate conversion device in the embodiment of the present application includes steps S11 to S13:
[0059] Step S11, providing a first substrate 1, please refer to Figure 4 and Figure 5 .
[0060] In some preferred embodiments, the thickness of the first substrate 1 may be 100 μm-1000 μm. The first substrate 1 is a standard substrate, which is convenient for obtaining materials and manufacturing substrate conversion devices, thereby reducing production costs.
[0061] As an optional implementation, the first substrate 1 has a diameter of four inches and a thickness of 525 μm±25 μm.
[0062] As an optional implementation, the first substrate 1 has a diameter of six inches and a thickness of 675 μm±25 μm.
[0063] As an optional implementation, the first substrate 1 has a diameter of eight inches and a thickness of 725 μm±25 μm.
[0064] As an optional implementation, the first substrate 1 has a diameter of twelve inches and a thickness of 775 μm±25 μm.
[0065] Step S12, forming a pattern layer 3 on the first surface 101 of the first substrate 1, such as Figure 6 and Figure 7 As shown, the pattern layer 3 only covers a partial area of the first surface 101 of the first substrate 1 , and another partial area of the first surface 101 of the first substrate 1 is exposed from the pattern layer 3 .
[0066] In an optional implementation, step S12 specifically includes steps S121 to S123:
[0067] Step S121, spin-coating photoresist on the first surface 101 of the first substrate 1. As an example, the thickness of the photoresist may be 1 μm-50 μm.
[0068] Step S122, exposing the photoresist. As an example, the exposure energy may be 10 mJ / cm 2 -200mJ / cm 2 .
[0069] Step S123, developing the photoresist, at which time the exposed photoresist will be removed, and the unexposed photoresist will be left to form the pattern layer 3, such as Figure 6 and Figure 7 shown.
[0070] Step S13, etching the first surface 101 not covered by the pattern layer 3 to form at least one conversion groove 105, such as Figure 8 and Fig. 9 shown.
[0071] It is understandable that after forming the conversion groove, the preparation method may further include removing the pattern layer 3 to obtain Figure 8 and Fig. 9 The substrate conversion device shown in the figure is a prior art for removing the pattern layer 3, so it will not be described in detail.
[0072] As an example, the cross-sectional shape of the conversion groove 105 may be circular or square. The depth of the conversion groove 105 may be 10 μm-1000 μm. Preferably, the depth of the conversion groove 105 is greater than the height of the second substrate 2 .
[0073] In some preferred embodiments, the first surface 101 not covered by the pattern layer 3 can be etched by plasma etching. In this case, the first surface 101 shielded by the pattern layer 3 will not be etched, thereby forming a conversion groove 105. The shape of the conversion groove 105 is determined by the pattern layer 3.
[0074] As an example, the etching gas may include SF6 (sulfur hexafluoride), O2 (oxygen) and C4F8 (octafluorocyclobutane). SF6 can be used as the main etching gas, which has a higher etching rate and a better selectivity. O2 can be used as an auxiliary gas together with the main etching gas to increase the etching rate. In addition, O2 can also improve the quality of the etched surface and reduce the residue and pollution after etching. C4F8 can be used as a passivation gas. C4F8 decomposes in a plasma state to produce CF2 groups, thereby forming a layer of high molecular polymer film on the side wall of the groove, preventing further reaction of fluorine free radicals with silicon, protecting the side wall from excessive etching, thereby improving the accuracy and controllability of etching.
[0075] In this embodiment, semiconductor photolithography is used to process the conversion groove 105, and the formed conversion groove 105 has a micron level or even submicron level precision, which is very high. It can not only more effectively support the second substrate 2, but also better protect the second substrate 2, further improving the processing accuracy of the second substrate 2.
[0076] The substrate conversion device prepared in this embodiment can realize the processing of the second substrate 2 on the equipment for processing the first substrate 1, or the transfer of the second substrate 2 on the equipment for transferring the first substrate 1, without the need to customize special processing equipment or transfer equipment for the second substrate 2, saving production costs and solving the problem that small-sized substrates cannot be prepared on large-sized substrate equipment with high precision and high process capability. In addition, the substrate conversion device is directly made of substrates, which is not only convenient to obtain materials, but also simple in structure. It can be directly prepared on the substrate production line, using semiconductor process processing without mechanical reprocessing. It not only has high processing accuracy, but also can meet the wafer reprinting requirements of high-precision devices, and also improves production efficiency.
[0077] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0078] The above embodiments only express the preferred implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.
Claims
1. A substrate conversion device, characterized in that: include: A first substrate, the first substrate includes a first surface and a second surface arranged opposite to each other, the first substrate also includes at least one third surface recessed in the first surface and a fourth surface connecting the first surface and the corresponding third surface, the third surface and the connected fourth surface are arranged to form a conversion groove, and the conversion groove is used to support a second substrate, wherein the third surface abuts against the bottom surface of the second substrate, and the fourth surface abuts against the side surface of the second substrate.
2. The substrate conversion device according to claim 1, characterized in that The first substrate has a plurality of the conversion grooves.
3. The substrate conversion device according to claim 1, characterized in that The height of the fourth surface is greater than or equal to the height of the second substrate.
4. The substrate conversion device according to claim 1 or 2, characterized in that: The first substrate further includes a fifth surface connecting the first surface and the second surface; The shape of the fifth surface is the same as that of the fourth surface, or the shape of the fifth surface is different from that of the fourth surface.
5. The substrate conversion device according to claim 2, characterized in that: At least some of the conversion grooves are evenly spaced around the axis of the first substrate.
6. The substrate conversion device according to claim 2, characterized in that: All the conversion grooves have the same shape and the same size.
7. The substrate conversion device according to claim 2, characterized in that: At least some of the conversion grooves have different shapes, and / or at least some of the conversion grooves have different sizes.
8. The substrate conversion device according to claim 1, characterized in that The first substrate is a silicon substrate.
9. A method for preparing a substrate conversion device, characterized in that: include: providing a first substrate; forming a pattern layer on the first surface of the first substrate; The first surface not covered by the pattern layer is etched to form at least one conversion groove.
10. The method for preparing a substrate conversion device according to claim 9, characterized in that: The forming of a pattern layer on the first surface of the first substrate comprises: Coating a photoresist on the first surface; The photoresist is exposed and developed to form the pattern layer.