Substrate matching device and preparation method thereof

Abstract

The invention relates to a substrate matching device and a preparation method thereof. The substrate matching device comprises a matching base; the at least one fixing unit is arranged on the matching base, and the fixing unit is used for fixing the corresponding first substrate on the matching base; wherein each fixing unit comprises a limiting assembly and a first conduction part, the limiting assembly comprises a plurality of first limiting parts arranged on the matching base, the plurality of first limiting parts are uniformly distributed at intervals to form a limiting space for limiting the corresponding first substrate on the matching base, and the first conduction part penetrates through the matching base and is arranged corresponding to the limiting space; the first conduction part is communicated with the vacuumizing device so as to fix the first substrate in the limiting space. The compatibility and universality of the processing equipment are improved, more operation space is reserved for the processing equipment, accidental displacement of the first substrate in the processing process can be avoided, and the processing precision is improved.

Description

Technical Field

[0001] The present application relates to the field of substrate processing, and in particular to a substrate matching device and a preparation method thereof. Background Art

[0002] As substrates are moving toward larger sizes, the processing and manufacturing capabilities of various types of equipment are also being improved to meet the requirements of large-size substrates, while the technological development of equipment used for small-size substrates has been neglected. For example, there is no lithography machine specifically for two-inch substrates used in the 100nm process.

[0003] However, during the substrate processing, a special carrier is required to support the substrate. In addition, the carrier is usually equipped with a precise positioning and alignment system to ensure that the pattern or device on the substrate can be accurately aligned with the corresponding part on the processing equipment. Since the positioning and alignment system can only position and align substrates of corresponding sizes, it is impossible to position and align a substrate of mismatched size when placed on a carrier, that is, it is impossible to prepare a small-sized substrate on a large-sized substrate equipment with high precision and high process capability. Summary of the invention

[0004] In order to solve the above technical problems, an embodiment of the present application provides a substrate matching device and a preparation method thereof.

[0005] In a first aspect, the substrate matching device provided in the embodiments of the present application includes:

[0006] Matching base; and

[0007] at least one fixing unit, provided on the matching base, and used for fixing the corresponding first substrate on the matching base;

[0008] Among them, each of the fixing units includes a limiting component and a first conductive portion, the limiting component includes a plurality of first limiting portions respectively arranged on the matching base, the plurality of first limiting portions are evenly spaced to form a limiting space that limits the corresponding first substrate on the matching base, the first conductive portion passes through the matching base and is arranged corresponding to the limiting space, and the first conductive portion is connected to a vacuum pumping device to fix the first substrate in the limiting space.

[0009] In some embodiments, each of the first limiting portions includes a first limiting body formed on the matching base and a second limiting body formed on the first limiting body.

[0010] In some embodiments, the height of the first limiting body is 0.5 μm-3 μm, and the height of the second limiting body is 100 μm-1000 μm.

[0011] In some embodiments, each of the first limiting portions includes a first limiting surface for limiting the side surface of the first substrate, and each of the fixing units also includes a second limiting portion, the second limiting portion is formed on the matching base, the first limiting portion is arranged along the edge of the second limiting portion, the second limiting portion includes a second limiting surface for limiting the bottom surface of the first substrate, and the first limiting surface and the second limiting surface together form the limiting space.

[0012] In some embodiments, the second limiting portion is formed on the upper surface of the matching base;

[0013] The second limiting surface is lower than the upper surface of the matching base, or the second limiting surface is higher than the upper surface of the matching base, or the second limiting surface and the upper surface of the matching base are located on the same plane.

[0014] In some embodiments, each of the fixed units also includes a second conductive portion, wherein the second conductive portion is opened on the matching base, the first conductive portion is opened on the bottom surface of the second conductive portion and passes through the matching base, and the second conductive portion includes a plurality of first slot bodies and a plurality of second slot bodies, the plurality of first slot bodies are concentrically arranged and spaced from the inside to the outside, and the plurality of second slot bodies respectively connect the plurality of first slot bodies and the first conductive portion.

[0015] In some embodiments, each of the fixing units includes a plurality of the first conducting portions, and the first conducting portions are evenly spaced and distributed in the corresponding restricted space.

[0016] In a second aspect, a method for preparing a substrate matching device provided in an embodiment of the present application includes: providing a matching base;

[0017] At least one limiting assembly is formed on the matching base, wherein the limiting assembly includes a plurality of first limiting portions, and the plurality of first limiting portions are evenly spaced and distributed to form a limiting space for limiting the first substrate on the matching base;

[0018] A first conductive portion penetrating the matching base is formed on the matching base, and the first conductive portion can be connected to a vacuum pump to fix the first substrate in the corresponding confined space.

[0019] In some embodiments, forming at least one limiting component on the matching base includes:

[0020] forming a first pattern portion covering the upper surface of the matching base, so that the upper surface of the matching base includes a first surface not covered by the first pattern portion;

[0021] forming a first layer structure covering at least the first surface;

[0022] Removing the first pattern portion and the first layer structure not covering the first surface to form a first limiting body;

[0023] A second limiting body is formed to cover the first limiting body, so as to obtain the first limiting portion including the first limiting body and the second limiting body.

[0024] In some embodiments, the method further comprises:

[0025] forming a second pattern portion on the matching base so that the upper surface of the matching base includes a second surface not covered by the second pattern portion;

[0026] The second surface is etched to form second limiting portions corresponding to the limiting components one by one, and the second limiting portions and the corresponding limiting components are surrounded to form the limiting space.

[0027] Compared with the prior art, the beneficial features of the embodiments of the present application are: the substrate matching device and the preparation method thereof, the substrate matching device includes: a matching base; and at least one fixing unit, which is arranged on the matching base, and the fixing unit is used to fix the corresponding first substrate on the matching base; wherein each fixing unit includes a limiting component and a first conductive part, the limiting component includes a plurality of first limiting parts respectively arranged on the matching base, the plurality of first limiting parts are evenly spaced to form a limiting space for limiting the corresponding first substrate on the matching base, the first conductive part passes through the matching base and is arranged corresponding to the limiting space, the first conductive part is connected to the vacuum pumping device to fix the first substrate in the limiting space, the size of the matching base is the same as the size of the substrate matched with the processing equipment, and can be After the first substrate is installed in the corresponding confined space, the matching base is placed on the substrate carrier of the processing equipment and positioned and aligned. The first substrate can be processed on the processing equipment without customizing special processing equipment for the first substrate, thereby saving production costs. In addition to processing substrates that match the existing sizes, the processing equipment can also process first substrates of other sizes, thereby improving the compatibility and versatility of the processing equipment. The multiple first limiting portions are evenly spaced, which makes it easier to take and place the first substrate and leaves more operating space for the processing equipment. The first substrate can also be fixed in the confined space by the first conducting portion connected to the vacuum pumping device, thereby avoiding accidental displacement of the first substrate during processing and improving processing accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a schematic diagram of the use status of the substrate matching device of the embodiment of the present application;

[0029] Figure 2 for Figure 1 AA section view;

[0030] Figure 3 This is a schematic diagram of the use status of the substrate matching device of the embodiment of the present application;

[0031] Figure 4 for Figure 3 BB cross-sectional view;

[0032] Figure 5 This is a schematic diagram of the use status of the substrate matching device of the embodiment of the present application;

[0033] Figure 6 This is a schematic diagram of the structure of an unprocessed matching base in the method for preparing a substrate matching device according to an embodiment of the present application;

[0034] Figure 7 for Figure 6 CC section view;

[0035] Figure 8 This is a schematic diagram of the structure of the intermediate obtained in step S201 in the method for preparing the substrate matching device of an embodiment of the present application;

[0036] Fig. 9 for Figure 8 DD cross-sectional view;

[0037] Fig.10 This is a schematic diagram of the structure of the intermediate obtained in step S202 in the method for preparing the substrate matching device of an embodiment of the present application;

[0038] Fig.11 for Fig.10 EE cross-sectional view;

[0039] Fig.12 A schematic structural diagram of an intermediate obtained in step S401 in the method for preparing a substrate matching device according to an embodiment of the present application;

[0040] Fig.13 for Fig.12 FF cross-sectional view;

[0041] Fig.14 A schematic structural diagram of an intermediate obtained in step S404 in the method for preparing a substrate matching device according to an embodiment of the present application;

[0042] Fig.15 for Fig.14 GG cross-sectional view;

[0043] Fig.16 A schematic diagram of a structure of a substrate matching device according to an embodiment of the present application;

[0044] Fig.17 This is a schematic diagram of the structure of the intermediate obtained in step S301 in the method for preparing the substrate matching device of an embodiment of the present application;

[0045] Fig.18 for Fig.17 HH cross-sectional view;

[0046] Fig.19 This is a schematic structural diagram of the intermediate obtained in step S302 in the method for preparing a substrate matching device according to an embodiment of the present application;

[0047] Fig. 20 for Fig.19 II sectional view;

[0048] Fig.21 This is another structural schematic diagram of the intermediate obtained in step S401 in the method for preparing the substrate matching device of the embodiment of the present application;

[0049] Fig. 22 for Fig.21 JJ sectional view;

[0050] Fig.23 This is another structural schematic diagram of the intermediate obtained in step S404 in the method for preparing the substrate matching device of the embodiment of the present application;

[0051] Fig.24 for Fig.23 KK cross-sectional view;

[0052] Fig.25 This is another schematic diagram of the structure of the substrate matching device according to an embodiment of the present application;

[0053] Fig.26 for Fig.25 LL cross-sectional view;

[0054] Wherein: 1-matching base (101-first surface, 102-second surface), 2-limiting assembly (201-first limiting part (201a-first limiting part, 2011-first limiting body, 2012-second limiting body, 2013-first limiting surface, 2014-end surface of the first limiting part), 202-third projection), 3-first conducting part, 4-limiting space, 5-first substrate (501-second projection, 502-end surface of the first substrate), 6-second limiting part (601-second limiting surface, 602-first projection, 603-third surface), 7-second conducting part (701-first slot body, 702-second slot body), 8-first graphic part, 9-second graphic part, 10-third graphic part. DETAILED DESCRIPTION

[0055] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive.

[0056] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0058] Please refer to Figures 1 to 5 , the substrate matching device of the embodiment of the present application includes a matching base 1 and a fixing unit. There is at least one fixing unit, each of which is respectively arranged on the matching base 1, and the fixing unit is used to fix the corresponding first substrate 5 on the matching base 1. Among them, each fixing unit includes a limiting component 2 and a first conductive part 3, the limiting component 2 includes a plurality of first limiting parts 201 respectively arranged on the matching base 1, and all the first limiting parts 201 are evenly spaced to form a restricted space 4, and the restricted space 4 is used to restrict the corresponding first substrate 5 on the matching base 1, the first conductive part 3 penetrates the matching base 1 and is arranged corresponding to the restricted space 4, and the first conductive part 3 can be connected to the vacuum device to fix the first substrate 5 in the corresponding restricted space 4.

[0059] In the embodiment of the present application, the size of the matching base 1 is the same as the size of the substrate matched by the processing equipment, and the size of the first substrate 5 is smaller than the size of the matching substrate of the existing processing device. After the first substrate 5 is installed in the corresponding restricted space 4, the matching base 1 can be placed on the substrate carrier of the processing equipment and positioned and aligned. There is no need to customize special processing equipment for the first substrate 5, so that the first substrate 5 can be processed on the processing equipment, saving production costs. In addition to processing substrates with matching existing sizes, the processing equipment can also process first substrates 5 of other sizes, improving the compatibility and versatility of the processing equipment, saving production costs, and solving the problem that small-sized substrates cannot be prepared on large-sized substrate equipment with high precision and high process capabilities. Multiple first limiting parts 201 are evenly spaced, which is more convenient for taking and placing the first substrate 5, and also leaves more operating space for the processing equipment, which is more convenient to use. The first substrate 5 can also be fixed in the restricted space 4 by the first conductive part 3 connected to the vacuum pumping device, which can avoid accidental displacement of the first substrate 5 during processing and improve processing accuracy.

[0060] In some preferred embodiments, a plurality of fixing units are formed on the matching base 1, and the fixing units are arranged in one-to-one correspondence with the first substrates 5, and each fixing unit is used to fix the corresponding first substrate 5 to the matching base 1, so that batch processing of multiple first substrates 5 can be achieved, further improving production efficiency.

[0061] In some preferred embodiments, the matching base 1 is made of a matching substrate of an existing processing device, which is not only convenient to obtain materials but also simple in structure. The substrate matching device can be directly prepared on a substrate production line, and semiconductor process processing is used without mechanical reprocessing. It not only has high processing accuracy and can match the wafer reprinting requirements of high-precision devices, but also improves production efficiency.

[0062] In some more preferred embodiments, the material of the matching base 1 is silicon. Specifically, the matching base 1 can be a silicon wafer substrate. In other embodiments, the material of the matching base 1 can also be other materials, such as a glass substrate, which will not be described in detail here.

[0063] In some more preferred embodiments, the thickness of the matching base 1 can be 100 μm-1000 μm. The matching base 1 is a standard substrate, which is convenient for obtaining materials and manufacturing substrate matching devices, thereby reducing production costs. The thickness of the matching base 1 refers to the length of the matching base 1 in the first direction.

[0064] As an optional embodiment, the diameter of the matching base 1 is four inches and the thickness is 525 μm±25 μm.

[0065] As an optional implementation, the diameter of the matching base 1 is six inches and the thickness is 675 μm±25 μm.

[0066] As an optional implementation, the diameter of the matching base 1 is eight inches and the thickness is 725 μm±25 μm.

[0067] As an optional implementation, the diameter of the matching base 1 is twelve inches and the thickness is 775 μm±25 μm.

[0068] As an example, the existing processing equipment can be suitable for processing substrates with a diameter of eight inches, that is, the matching base 1 is a substrate with a diameter of eight inches. The first substrate 5 is a substrate with a diameter of two inches. The matching base 1 has a confined space 4 set in a one-to-one correspondence with the first substrate 5. The first substrate 5 is placed in the confined space 4 of the substrate matching device, and then the substrate matching device is placed on the carrier of the existing processing equipment. The positioning and alignment system of the existing processing equipment can be used to accurately align the pattern or device on the first substrate 5 with the corresponding part on the processing equipment, thereby realizing the processing of two-inch substrates on the processing equipment for processing eight-inch substrates. In other words, two-inch substrates can be processed on the production line for processing eight-inch substrates, without the need to customize special processing equipment for two-inch substrates, saving production costs, solving the problem that two-inch substrates cannot be prepared on high-precision, high-process capability eight-inch substrate processing equipment, and can also match the wafer reprinting requirements of high-precision devices. Moreover, the substrate matching device is directly made of an eight-inch substrate, which is not only convenient to obtain materials but also simple in structure. The substrate matching device can be directly prepared on the eight-inch substrate production line, using semiconductor process processing without the need for mechanical reprocessing. Not only is the processing accuracy high, but the production efficiency is also improved.

[0069] As an example, the existing processing equipment may be a 100nm process 8-inch substrate lithography machine. That is to say, the substrate matching device can realize the processing of a two-inch substrate on a 100nm process 8-inch substrate lithography machine, which can solve the problem of the lack of a 100nm process 2-inch substrate lithography machine.

[0070] It is understandable that the processing equipment in this application is prior art and will not be described in detail here. In other words, the substrate carrier and the positioning and alignment system of the processing equipment in this application are prior art and will not be described in detail here.

[0071] It should be noted that the size of the matching base 1 is larger than the size of the first substrate 5. The above examples are for illustration only, and the present application does not limit the specific sizes of the matching base 1 and the first substrate 5. As an example, the matching base 1 can also be a substrate with a diameter of six inches or a substrate with a diameter of more than eight inches, and the first substrate 5 can also be a substrate with a diameter of four inches, etc. The processing equipment can also be other equipment, for example, the processing equipment can also be semiconductor and microelectronics field equipment such as a glue machine, which is not limited here.

[0072] In some preferred embodiments, the shape of the first substrate 5 may be the same as that of the matching base 1. As an example, the matching base 1 may be a circular silicon wafer substrate with a diameter of six inches, and the matching base 1 may load at least one first substrate 5, wherein at least one first substrate 5 is a circular silicon wafer substrate with a diameter of two inches, so that a circular silicon wafer substrate with a diameter of two inches may be processed on a processing device for a circular silicon wafer substrate with a diameter of six inches.

[0073] In other preferred embodiments, the shape of the first substrate 5 may be different from that of the matching base 1. As an example, the matching base 1 may be a circular silicon wafer substrate with a diameter of six inches, and the matching base 1 may load at least one first substrate 5, wherein at least one first substrate 5 may be a square glass substrate with a side length of four inches, so that a square glass substrate with a side length of four inches may be processed on a processing device for a circular silicon wafer substrate with a diameter of six inches.

[0074] It is understandable that the material of the first substrate 5 may be the same as the material of the matching base 1 , or the material of the first substrate 5 may be different from the material of the matching base 1 , which will not be elaborated herein.

[0075] In some preferred embodiments, the first position-limiting portion 201 includes a first position-limiting body 2011 and a second position-limiting body 2012, wherein the first position-limiting body 2011 is formed on the matching base 1, and the second position-limiting body 2012 is formed on the first position-limiting body 2011. The second position-limiting body 2012 can effectively increase the height of the first position-limiting portion 201, so that the first position-limiting portion 201 can have a sufficient height, so that the substrate matching device can stably and effectively carry the first substrate 5.

[0076] As an optional embodiment, the height of the first limiter 2011 is 0.5 μm-3 μm, and the height of the second limiter 2012 is 100 μm-1000 μm. The height of the first limiter 2011 refers to the length of the first limiter 2011 in the first direction. The height of the second limiter 2012 refers to the length of the second limiter 2012 in the first direction. The height of the first limiter 201 refers to the length of the first limiter 201 in the first direction.

[0077] In some preferred embodiments, each first limiting portion 201 includes a first limiting surface 2013 that limits the side of the first substrate 5. Each fixing unit also includes a second limiting portion 6, which is formed on the matching base 1. The first limiting portion 201 can be arranged along the edge of the second limiting portion 6, and the second limiting portion 6 includes a second limiting surface 601 that limits the bottom surface of the first substrate 5. The first limiting surface 2013 and the second limiting surface 601 together form a limiting space 4, thereby stably and effectively limiting the first substrate 5 on the matching base 1.

[0078] As an example, please refer to Figure 1 , Figure 3 and Figure 5 As shown, the first projection 602 of the second limiting portion 6 in the first direction coincides with the second projection 501 of the first substrate 5 in the first direction, that is, the second limiting portion 6 matches the size of the first substrate 5, which can not only effectively control the processing cost of the second limiting portion 6, but also enable the second limiting portion 6 to stably and effectively support the first substrate 5.

[0079] In some preferred embodiments, the third projection 202 of the limiting component 2 in the first direction is located outside the first projection 602. Figure 1 , Figure 3 and Figure 5 It is not only easier to process the limiting component 2, but also will not damage the second limiting portion 6 or affect the processing of the second limiting portion 6, thereby improving the overall processing accuracy and product quality of the substrate matching device.

[0080] As an example, there may be a gap between the third projection 202 and the first projection 602 , which not only facilitates processing but also fully avoids damaging the second limiting portion 6 or affecting the processing of the second limiting portion 6 during the processing of the limiting assembly 2 .

[0081] It should be noted that, in other embodiments, there may be no gap or at least partial overlap between the third projection 202 and the first projection 602. Alternatively, in other embodiments, the second projection 501 is located within the first projection 602 and the projection area of ​​the second projection 501 is smaller than the projection area of ​​the first projection 602, and the third projection 202 is also located within the first projection 602. As long as the limiting assembly 2 and the second limiting portion 6 cooperate with each other to limit the first substrate 5 on the matching base 1, it is ensured that the first substrate 5 will not move accidentally during the processing.

[0082] As an optional implementation, please refer to Figure 1 and Figure 3The shape of each second limiting portion 6 is the same, and the size of each second limiting portion 6 is equal, so that batch production of multiple identical first substrates 5 can be achieved, further improving production efficiency.

[0083] As an optional implementation, please refer to Figure 5 , wherein the shapes of some of the second limiting portions 6 may be different, wherein the sizes of some of the second limiting portions 6 may also be different, and first substrates 5 of various sizes may be produced simultaneously, further improving the compatibility and versatility of the equipment.

[0084] As an optional embodiment, the shape of each second limit portion 6 may be different. Alternatively, the shape of each second limit portion 6 may be the same, but the size of each second limit portion 6 is different, thereby achieving the simultaneous production of multiple different first substrates 5, further improving the compatibility and versatility of the processing equipment.

[0085] In some preferred embodiments, please refer to Figure 1 , Figure 3 and Figure 5 At least part of the second limiting portions 6 are evenly spaced around the axis of the matching base 1, so that the space can be more fully and effectively utilized, so that the substrate matching device can place more first substrates 5, further improving production efficiency.

[0086] In other embodiments, the second limiting portions 6 may also be distributed in other ways.

[0087] It should be noted that the number, shape, size and specific distribution of the second limiting parts 6 can be set according to actual conditions and will not be elaborated here.

[0088] In some embodiments, the second limiting portion 6 is formed on the upper surface of the matching base 1. As an optional embodiment, the second limiting surface 601 is lower than the upper surface of the matching base 1, please refer to Figure 2 and Figure 4 , that is, the second limiting portion 6 is a groove structure provided on the upper surface of the matching base 1, which is not only convenient for processing, but also can effectively limit the first substrate 5. Alternatively, as an optional embodiment, the second limiting surface 601 is higher than the upper surface of the matching base 1, that is, the second limiting portion 6 is a boss structure convexly provided on the upper surface of the matching base 1, which is more convenient for controlling the processing accuracy of the second limiting surface 601. Alternatively, as an optional embodiment, the second limiting surface 601 and the upper surface of the matching base 1 are located on the same plane, that is, the second limiting portion 6 is a part of the upper surface of the matching base 1, and the process is simpler.

[0089] In some preferred embodiments, the length of each first limiting portion 201 in the first direction is respectively greater than the length of the second limiting portion 6 in the first direction. In other words, the height of the first limiting portion 201 is greater than the height of the second limiting portion 6. Figure 2 and Figure 4 , so that the first limiting portion 201 can more stably and effectively limit the first substrate 5. Also, please refer to Figure 2 and Figure 4 As shown, the second limiting portion 6 has a second limiting surface 601 for supporting the bottom surface of the first substrate 5, so the flatness of the second limiting surface 601 determines whether the second limiting portion 6 can stably and effectively support the first substrate 5. If the second limiting surface 601 is not flat, it may cause the pattern or device on the first substrate 5 to be unable to accurately align with the corresponding part on the processing equipment, thereby affecting the processing accuracy of the first substrate 5. In some examples, the second limiting portion 6 is Figure 2 and Figure 4 In the groove structure shown, if the groove depth of the second limiting portion 6 is too deep, it is difficult to ensure the flatness of the second limiting surface 601 formed by processing. In the embodiment of the present application, the second limiting portion 6 cooperates with the limiting assembly 2, which can not only effectively carry and limit the first substrate 5, but also improve the processing accuracy of the second limiting portion 6, and further improve the processing accuracy of the first substrate 5. In addition, all the first limiting portions 201 are evenly spaced along the edges of the corresponding second limiting portions 6, which is more convenient for taking and placing the first substrate 5, and also leaves more operating space for the processing equipment, which is more convenient to use.

[0090] As an example, the height of the second limit portion 6 can be 10 μm-100 μm, and the height of the first limit portion 201 can be 100 μm-1000 μm, thereby improving the processing accuracy of the second limit portion 6 and further improving the processing accuracy of the first substrate 5. Preferably, the height of the second limit portion 6 is less than the height of the first substrate 5, thereby further improving the processing accuracy of the second limit portion 6 and the processing accuracy of the first substrate 5.

[0091] In some more preferred embodiments, please refer to Figure 2 and Figure 4 , the lengths of the first limiting portions 201 in the first direction are equal, that is, the heights of the first limiting portions 201 are equal, which can not only effectively avoid interference with other structures on the processing equipment, but also facilitate processing, while ensuring the overall strength of the limiting assembly 2, and can also better position the first substrate 5.

[0092] As an optional embodiment, the sum of the length of the first limiting portion 201 in the first direction and the length of the second limiting portion 6 in the first direction is equal to the length of the first substrate 5 in the first direction, that is, the end face 2014 of the first limiting portion 201 and the end face 502 of the first substrate 5 are located on the same plane, which can not only stably and effectively limit the first substrate 5 to the second limiting portion 6, but also effectively control the processing cost of the limiting assembly 2 and leave more operating space for the processing equipment.

[0093] As an optional implementation, please refer to Figure 2 and Figure 4 The sum of the length of the first limiting portion 201 in the first direction and the length of the second limiting portion 6 in the first direction is greater than the length of the first substrate 5 in the first direction, that is, the plane where the end face 2014 of the first limiting portion 201 is located is higher than the plane where the end face 502 of the first substrate 5 is located, thereby further ensuring that the entire first substrate 5 can be stably and effectively limited on the second limiting portion 6.

[0094] In some preferred embodiments, please refer to Figure 1 , Figure 3 and Figure 5 Each limiting assembly 2 includes at least three first limiting portions 201 , and all the first limiting portions 201 are evenly spaced along the edge of the corresponding second limiting portion 6 , thereby stably and effectively limiting the first substrate 5 on the second limiting portion 6 .

[0095] As an example, please refer to Figure 1 , Figure 3 and Figure 5 Each limiting assembly 2 includes four first limiting portions 201 , and the first limiting portions 201 of each limiting assembly 2 are evenly spaced along the edge of the corresponding second limiting portion 6 , thereby stably and effectively limiting the first substrate 5 on the second limiting portion 6 .

[0096] As an optional implementation, please refer to Figure 1 and Figure 3 The limiting components 2 are independent of each other, and each first limiting portion 201 belongs to only one limiting component 2. That is, each first limiting portion 201 is only used to limit one first substrate 5, which can limit the corresponding first substrate 5 more accurately and effectively.

[0097] As an optional implementation, two adjacent second limiting portions 6 can share part of the limiting component 2, please refer to Figure 5 That is to say, at least one of the first limiting portions 201a belongs to two different limiting components 2 at the same time, and the first limiting portion 201a can be set corresponding to the two second limiting portions 6 at the same time, so as to achieve the effect of reducing the occupied space.

[0098] In some preferred embodiments, please refer to Figure 4 , each fixing unit further includes a second conductive portion 7 connected to the first conductive portion 3. The second conductive portion 7 is provided on the matching base 1, and the first conductive portion 3 is provided on the bottom surface of the second conductive portion 7 and penetrates the matching base 1. The second conductive portion 7 includes a plurality of first slots 701 and a plurality of second slots 702. Among them, the first slot 701 is annular, and all the first slots 701 are concentrically arranged and spaced from the inside to the outside. The second slot 702 is strip-shaped, and the second slot 702 respectively connects the plurality of first slots 701 and the first conductive portion 3. When the first substrate 5 is vacuum-adsorbed, the second conductive portion 7 can make the force on the first substrate 5 more uniform, thereby more stably and effectively fixing the first substrate 5 to the matching base 1, and compared with the first conductive portion 3, the second conductive portion 7 does not need to penetrate the matching base 1, and the groove depth of the second conductive portion 7 is much smaller than the length of the first conductive portion 3, which can minimize the impact on the strength of the matching base 1, and has higher processing accuracy.

[0099] As an optional implementation, please refer to Figure 4 , the second limiting portion 6 is provided with a first conducting portion 3, and the second limiting surface 601 of the second limiting portion 6 is also provided with a second conducting portion 7, the second conducting portion 7 includes at least one annular first groove body 701 and a plurality of strip-shaped second groove bodies 702, the annular first groove body 701 is coaxially arranged with the first conducting portion 3, the plurality of strip-shaped second groove bodies 702 are radially distributed, and the strip-shaped second groove bodies 702 are used to connect the annular first groove body 701 and the first conducting portion 3. In this embodiment, the second limiting surface 601 of the second limiting portion 6 is provided with a second conducting portion 7 connected with the first conducting portion 3, when the first substrate 5 is vacuum-adsorbed, the force on the first substrate 5 can be made more uniform, so that the first substrate 5 can be fixed to the matching base 1 more stably and effectively, and compared with the first conducting portion 3, the second conducting portion 7 does not need to penetrate the matching base 1, the groove depth of the second conducting portion 7 is much smaller than the length of the first conducting portion 3, which can minimize the influence on the strength of the matching base 1, and the processing accuracy is higher.

[0100] As an example, the second conductive portion 7 may include two coaxially arranged annular first grooves 701 and two cross-shaped strip-shaped second grooves 702, and the intersection of the two strip-shaped second grooves 702 is exactly located at the center point of the annular first groove 701. Not only is the structure simple and easy to process, but also when vacuuming, the first substrate 5 is subjected to more uniform force.

[0101] In some preferred embodiments, the depth of the second conductive portion 7 may be 10 μm-100 μm, and the thickness of the matching base 1 may be 100 μm-1000 μm. The depth of the second conductive portion 7 refers to the length of the second conductive portion 7 in the first direction. The thickness of the matching base 1 refers to the length of the matching base 1 in the first direction.

[0102] In one example, the depth of the second conductive portion 7 may be 10 μm, and the thickness of the matching base 1 may be 100 μm. In another example, the depth of the second conductive portion 7 may be 100 μm, and the thickness of the matching base 1 may be 1000 μm. In the above example, the depth of the second conductive portion 7 is only one tenth of the thickness of the matching base 1, which can minimize the impact on the strength of the matching base 1, and has higher processing accuracy, and can also more stably and effectively fix the first substrate 5 to the matching base 1.

[0103] It is understandable that in other embodiments, the second conductive portion 7 may also be other structures, which will not be described in detail here.

[0104] In some preferred embodiments, the second limiting surface 601 of the second limiting portion 6 is a plane perpendicular to the axis of the second limiting portion 6, so that the first substrate 5 can be more stably and effectively adsorbed in the second limiting portion 6, further avoiding displacement of the first substrate 5 and further improving the processing accuracy of the first substrate 5.

[0105] In some preferred embodiments, please refer to Figure 2 Each of the fixing units includes a plurality of first conductive portions 3, which are evenly spaced and distributed in the corresponding restricted space 4. Not only is the structure simple and easy to process, but the first substrate 5 can also be more securely adsorbed and fixed to the matching base 1.

[0106] As an optional implementation, please refer to Figure 2 The second limiting surface 601 of the second limiting portion 6 is provided with a plurality of first conducting portions 3, which are arranged at intervals, not only having a simple structure and being easy to process, but also being able to more securely adsorb and fix the first substrate 5 to the matching base 1.

[0107] It is understandable that the vacuum pumping device may be a vacuum pumping device of an existing processing equipment, and the first conductive portion 3 may be connected to the vacuum pumping device of the existing processing equipment through a vacuum pumping hole on a substrate carrier of the existing processing equipment, which will not be elaborated herein.

[0108] The method for preparing a substrate matching device according to an embodiment of the present application can be applied to preparing any of the above-mentioned substrate matching devices.

[0109] The method for preparing the substrate matching device in the embodiment of the present application includes steps S10 to S50:

[0110] Step S10, provide a matching base 1, please refer to Figure 6 and Figure 7 shown.

[0111] Step S40, forming at least one limiting assembly 2 on the matching base 1, the limiting assembly 2 comprising a plurality of first limiting portions 201, the plurality of first limiting portions 201 being evenly spaced to form a limiting space 4 for limiting the first substrate 5 on the matching base 1, please refer to Fig.14 and Fig.15 shown.

[0112] Step S50, forming a first conductive portion 3 penetrating the matching base 1 on the matching base 1, the first conductive portion 3 can be connected to the vacuum device to fix the first substrate 5 in the corresponding confined space 4, please refer to Fig.16 .

[0113] In the embodiment of the present application, the size of the matching base 1 is the same as the size of the matching substrate of the existing processing device, and the size of the first substrate 5 is smaller than the size of the matching substrate of the existing processing device. That is to say, after the substrate matching device loaded with the first substrate 5 is placed on the substrate carrier of the existing processing device, the positioning and alignment system of the existing processing device can accurately align the pattern or device on the first substrate 5 with the corresponding part on the processing equipment, so that the processing equipment can process first substrates 5 of other sizes in addition to processing substrates of matching existing sizes, without the need to customize special processing equipment for the first substrate 5, saving production costs and solving the problem that small-sized substrates cannot be prepared on large-sized substrate equipment with high precision and high process capability.

[0114] In some preferred embodiments, the matching base 1 is made of a matching substrate of an existing processing device, which is not only convenient to obtain materials but also simple in structure. The substrate matching device can be directly prepared on a substrate production line. The semiconductor process is used to process the substrate matching device without the need for mechanical reprocessing. Not only is the processing accuracy high and can it match the wafer transfer requirements of high-precision devices, but production efficiency is also improved.

[0115] In some preferred implementations, step S40 specifically includes steps S401 to S404:

[0116] Step S401, forming a first pattern portion 8, the first pattern portion 8 only covers a portion of the upper surface of the matching base 1, so that the upper surface of the matching base 1 includes a first surface 101, and the first surface 101 is not covered by the first pattern portion 8, please refer to Fig.12 and Fig.13 shown.

[0117] Step S402 , forming a first layer structure, wherein the first layer structure at least covers the first surface 101 .

[0118] Step S403 , removing the first pattern portion 8 and the first layer structure not covering the first surface 101 , to form a first limiting body 2011 .

[0119] Step S404, forming a second limiting body 2012 covering the first limiting body 2011, so as to obtain a first limiting portion 201 including the first limiting body 2011 and the second limiting body 2012, please refer to Fig.14 and Fig.15 shown.

[0120] This embodiment can effectively reduce the difficulty of preparing the substrate matching device, further reduce the production cost, and improve the production efficiency. In this embodiment, the first limiting portion 201 includes a first limiting body 2011 and a second limiting body 2012 formed on the first limiting body 2011, and the second limiting body 2012 can effectively increase the height of the first limiting portion 201, so that the first limiting portion 201 can have a sufficient height, and the step-by-step preparation of the first limiting portion 201 can effectively reduce the thickness of the first layer structure, thereby further reducing the difficulty of forming the first layer structure and reducing the time of forming the first layer structure, thereby further reducing the difficulty of preparing the substrate matching device and the production cost, improving the production efficiency, and at the same time, it can also improve the product yield of the substrate matching device, so that the substrate matching device can stably and effectively carry the first substrate 5.

[0121] As an optional implementation, the height of the first limiting body 2011 is 0.5 μm-3 μm, and the height of the second limiting body 2012 is 100 μm-1000 μm.

[0122] As an example, step S401 may specifically include steps S4011 to S4013:

[0123] Step S4011, spin-coating photoresist on the upper surface of the matching base 1. As an example, the thickness of the photoresist may be 1 μm-50 μm.

[0124] Step S4012, exposing the photoresist. As an example, the exposure energy may be 10 mJ / cm 2 -200mJ / cm 2 .

[0125] Step S4013, developing the photoresist, at this time the exposed photoresist will be removed, and the unexposed photoresist will be left to form the first pattern portion 8, the first pattern portion 8 only covers part of the upper surface of the matching base 1, please refer to Fig.12 and Fig.13At this time, the upper surface of the matching base 1 includes a first surface 101 that is not covered by the first pattern portion 8 .

[0126] In some preferred embodiments, in step S402, at least one of PVD (Physical Vapor Deposit ion) and electroplating can be used to sputter a seed layer of metal on the matching base 1 covered with the first pattern portion 8 to form a first layer structure. The first layer structure may include at least one of Cr (Chromium), Ni (Nickel) and Ti (Titanium). In other words, the first limiter 2011 includes at least one of Cr, Ni and Ti.

[0127] It is understandable that in other embodiments, the first layer structure may be formed in other ways, and the first layer structure and the first limiting body 2011 may also include other materials, which will not be elaborated herein.

[0128] As an example, in step S404, the second limiting body 2012 may be formed on the first limiting body 2011 by electroplating, which is a simple process. The second limiting body 2012 may include at least one of Cr, Ni and Ti.

[0129] In a preferred embodiment, the second stopper 2012 includes Cr, which can combine with oxygen to form a corrosion-resistant Cr2O3 passivation film, thereby effectively preventing further oxidation and corrosion of the first stopper 201. In addition, Cr can significantly improve the strength, hardness and wear resistance of the first stopper 201.

[0130] It is understandable that in other embodiments, the second limiting body 2012 may be formed in other ways, and the second limiting body 2012 may also include other materials, which will not be elaborated herein.

[0131] In a preferred embodiment, the method for preparing the substrate matching device further includes step S20 : ​​forming at least one second limiting portion 6 on the matching base 1 .

[0132] In some more preferred implementations, step S20 may specifically include steps S201 to S202:

[0133] Step S201, forming a second pattern portion 9 on the matching base 1, the second pattern portion 9 covers a portion of the upper surface of the matching base 1, so that the upper surface of the matching base 1 includes a second surface 102, and the second surface 102 is not covered by the second pattern portion 9, please refer to Figure 8 and Fig. 9 .

[0134] Step S202, etching the second surface 102 of the upper surface of the matching base 1 to form a second limiting portion 6, please refer to Fig.10 and Fig.11 The second limiting portion 6 is arranged in one-to-one correspondence with the limiting assembly 2, and the second limiting portion 6 can be surrounded by the corresponding limiting assembly 2 to form a limiting space 4.

[0135] As an example, step S201 specifically includes steps S2011 to S2013:

[0136] Step S2011, spin-coating photoresist on the upper surface of the matching base 1. As an example, the thickness of the photoresist may be 1 μm-50 μm.

[0137] Step S2012, exposing the photoresist. As an example, the exposure energy may be 10 mJ / cm 2 -200mJ / cm 2 .

[0138] Step S2013, developing the photoresist, at this time, the exposed photoresist will be removed, and the unexposed photoresist will be left to form the second pattern portion 9, and the second pattern portion 9 only shields part of the upper surface of the matching base 1. At this time, the upper surface of the matching base 1 has a second surface 102 that is not shielded by the second pattern portion 9. Please refer to Figure 8 and Fig. 9 .

[0139] In some preferred embodiments, step S202 may be performed by plasma etching to etch the second surface 102 not covered by the second pattern portion 9. At this time, the upper surface of the matching base 1 shielded by the second pattern portion 9 will not be etched, thereby forming the second limit portion 6. The shape of the second limit portion 6 is determined by the second pattern portion 9, and the specific structure of the second pattern portion 9 can be set as required.

[0140] As an example, the etching gas may include SF6 (sulfur hexafluoride), O2 (oxygen) and C4F8 (octafluorocyclobutane). SF6 can be used as the main etching gas, which has a higher etching rate and a better selectivity. O2 can be used as an auxiliary gas together with the main etching gas to increase the etching rate. In addition, O2 can also improve the quality of the etched surface and reduce the residue and pollution after etching. C4F8 can be used as a passivation gas. C4F8 decomposes in a plasma state to produce CF2 groups, thereby forming a layer of high molecular polymer film on the side wall of the groove, preventing further reaction of fluorine free radicals with silicon, protecting the side wall from excessive etching, thereby improving the accuracy and controllability of etching.

[0141] In this embodiment, semiconductor photolithography is used to process the second limiting portion 6, and the precision of the formed second limiting portion 6 is at the micron level or even sub-micron level, which is very high. It can not only more effectively support the first substrate 5, but also better protect the first substrate 5, thereby further improving the processing accuracy of the first substrate 5.

[0142] In this embodiment, after forming the second limiting portion 6, step S202 further includes: removing the second pattern portion 9 to obtain Fig.10 and Fig.11 The intermediate shown in FIG. Removing the second pattern portion 9 is a prior art and will not be described in detail here.

[0143] In some preferred embodiments, step S20 is performed before step S40, which makes it easier to process the second limit portion 6 and will not damage the limit assembly 2 and the first conductive portion 3 due to the processing of the second limit portion 6, thereby reducing the processing difficulty of the substrate matching device and improving the product yield of the substrate matching device.

[0144] Accordingly, step S401 may specifically include steps S4011 to S4013:

[0145] Step S4011, spin-coating photoresist on the upper surface of the matching base 1 and the surface of the second limiting portion 6. As an example, the thickness of the photoresist may be 1 μm-50 μm.

[0146] Step S4012, exposing the photoresist. As an example, the exposure energy may be 10 mJ / cm 2 -200mJ / cm 2 .

[0147] Step S4013, developing the photoresist, at this time, the exposed photoresist will be removed, and the unexposed photoresist will be left to form the first pattern portion 8, the first pattern portion 8 only covers part of the upper surface of the matching base 1 and the surface of the second limiting portion 6, therefore, the upper surface of the matching base 1 includes the first surface 101 not covered by the first pattern portion 8, as shown in FIG. Fig.12 and Fig.13 shown.

[0148] Accordingly, in step S402, at least one of PVD and electroplating can be used. Fig.12 and Fig.13 A seed layer of metal is sputtered onto the intermediate body to form a first layer structure.

[0149] In some preferred implementations, step S50 may specifically include:

[0150] The first conductive portion 3 penetrating the matching base 1 is formed by etching the second limiting surface 601 of the second limiting portion 6. The etching can realize high-precision through-hole processing with higher controllability, and the formed first conductive portion 3 has higher precision.

[0151] In some other preferred implementations, step S50 may specifically include:

[0152] Laser drilling is performed on the second limiting surface 601 of the second limiting portion 6 to form the first conductive portion 3 penetrating the matching base 1 . This not only has high precision, but also allows for rapid hole formation, thereby increasing the manufacturing speed.

[0153] As a preferred embodiment, a second conducting portion 7 may be formed in the second limiting portion 6. Accordingly, the preparation method may further include step S30:

[0154] Step S30 , forming a second conductive portion 7 in the second limiting portion 6 , wherein the second conductive portion 7 is connected to the first conductive portion 3 .

[0155] In some preferred embodiments, step S30 can be performed after step S20 and before step S40, which not only simplifies the process and reduces the processing difficulty of the substrate matching device, but also avoids damaging the limit assembly 2 and the first conductive part 3 when processing the second conductive part 7, further improving the product yield of the substrate matching device.

[0156] Accordingly, step S401 includes: forming a first graphic portion 8, the first graphic portion 8 covers a portion of the upper surface of the matching base 1, the surface of the second limiting portion 6 and the surface of the second conductive portion 7, so that the upper surface of the matching base 1 includes a first surface 101, and the first surface 101 is not covered by the first graphic portion 8, please refer to Fig.21 and Fig. 22 Correspondingly, the intermediate obtained in step S404 can be found in Fig.23 and Fig.24 shown.

[0157] Specifically, step S401 may specifically include steps S4011 to S4013:

[0158] Step S4011, spin-coating photoresist on the upper surface of the matching base 1, the surface of the second limiting portion 6, and the surface of the second conductive portion 7. As an example, the thickness of the photoresist may be 1 μm-50 μm.

[0159] Step S4012, exposing the photoresist. As an example, the exposure energy may be 10 mJ / cm 2 -200mJ / cm 2 .

[0160] Step S4013, developing the photoresist, at this time, the exposed photoresist will be removed, and the unexposed photoresist will be left to form the first pattern portion 8, the first pattern portion 8 shields part of the upper surface of the matching base 1, the surface of the second limiting portion 6 and the surface of the second conductive portion 7, please refer to Fig.21 and Fig. 22 Therefore, the upper surface of the matching base 1 includes a first surface 101 that is not covered by the first pattern portion 8 .

[0161] Accordingly, step S50 specifically includes: forming a first conductive portion 3 in the second limiting portion 6 that is connected to the second conductive portion 7 and penetrates the matching base 1, please refer to Fig.25 and Fig.26 .

[0162] In some more preferred embodiments, the first conductive portion 3 can be coaxially arranged with the annular first groove 701 of the second conductive portion 7, that is, the first conductive portion 3 is located at the center of the annular first groove 701, so that the vacuuming is more uniform, further improving the stability of the first substrate 5.

[0163] As an example, step S30 may specifically include step S301 to step S302:

[0164] Step S301, in Fig.10 and Fig.11 The third pattern portion 10 is formed on the upper surface of the matching base 1 and in the second limiting portion 6 of the intermediate body shown, so that the second limiting portion 6 has a third surface 603 that is not covered by the third pattern portion 10. Please refer to Fig.17 and Fig.18 .

[0165] Step S302, etching the third surface 603 of the second limiting portion 6 to form a second conductive portion 7, see Fig.19 and Fig. 20 .

[0166] It can be understood that after etching the third surface 603 to form the second conductive portion 7, the third pattern portion 10 can be removed to obtain Fig.19 and Fig. 20 The intermediate body shown in the figure, without the third graphic portion 10, is a prior art and will not be described in detail here.

[0167] In an optional implementation, step S301 specifically includes steps S3011 to S3013:

[0168] Step S3011, spin-coating photoresist on the upper surface of the matching base 1 and the surface of the second limiting portion 6. As an example, the thickness of the photoresist may be 1 μm-50 μm.

[0169] Step S3012: Expose the photoresist. As an example, the exposure energy may be 10 mJ / cm 2 -200mJ / cm 2 .

[0170] Step S3013, developing the photoresist, at this time the exposed photoresist will be removed, and the unexposed photoresist will be left to form a third graphic portion 10, and the third graphic portion 10 only covers the upper surface of the matching base 1 and part of the surface of the second limiting portion 6. Therefore, at this time, the second limiting portion 6 has a third surface 603 that is not covered by the third graphic portion 10.

[0171] In some preferred embodiments, the third surface 603 not covered by the third pattern portion 10 may be etched by plasma etching to form the second conductive portion 7. The shape of the second conductive portion 7 is determined by the third pattern portion 10, and the specific structure of the third pattern portion 10 may be set as required.

[0172] As an example, the etching gas may include SF6 (sulfur hexafluoride), O2 (oxygen gas), and C4F8 (octafluorocyclobutane).

[0173] In this embodiment, the second conductive portion 7 is processed by semiconductor photolithography, and the precision of the formed second conductive portion 7 is micron level or even sub-micron level, which is very high, so that the first substrate 5 can be fixed more effectively and the processing precision of the first substrate 5 can be further improved.

[0174] For a specific example, see Figures 6 to 16 As shown, the method for preparing the substrate matching device comprises the following steps in sequence: Step S10, providing Figure 6 and Figure 7 The matching base 1 shown; step S20, please refer to Figures 8 to 11 At least one second limiting portion 6 is formed on the matching base 1 to obtain Fig.10 and Fig.11 The intermediate shown; step S40, please refer to Figures 12 to 15 , at least one limiting component 2 is formed on the matching base 1, and the Fig.14 and Fig.15 The intermediate body shown in the figure, the limiting assembly 2 and the second limiting portion 6 are arranged one by one, and the limiting assembly 2 includes a plurality of first limiting portions 201, and the plurality of first limiting portions 201 are evenly spaced and distributed along the edge of the second limiting portion 6 to form a limiting space 4 for limiting the first substrate 5 on the matching base 1; step S50, forming a first conductive portion 3 penetrating the matching base 1 at the second limiting portion 6, and obtaining the following Fig.16 In the substrate matching device shown, the first conductive portion 3 can be connected to a vacuum device to fix the first substrate 5 in the corresponding confined space 4.

[0175] In another specific example, see Figures 6 to 11 ,as well as Figures 17 to 26 The method for preparing the substrate matching device comprises the following steps in sequence: Step S10, providing Figure 6 and Figure 7 The matching base 1 shown; step S20, please refer to Figures 8 to 11 At least one second limiting portion 6 is formed on the matching base 1 to obtain Fig.10 and Fig.11 The intermediate shown; step S30, please refer to Figures 17 to 20 , a second conductive portion 7 is formed in the second limiting portion 6, and the following is obtained: Fig.19 and Fig. 20 The intermediate shown; step S40, please refer to Figure 21 to Figure 24 , at least one limiting component 2 is formed on the matching base 1, and the Fig.23 and Fig.24 The intermediate body shown in the figure, the limiting assembly 2 and the second limiting portion 6 are arranged one by one, and the limiting assembly 2 includes a plurality of first limiting portions 201, and the plurality of first limiting portions 201 are evenly spaced along the edge of the second limiting portion 6 to form a limiting space 4 for limiting the first substrate 5 on the matching base 1; step S50, a first conductive portion 3 connected to the second conductive portion 7 and penetrating the matching base 1 is formed in the second limiting portion 6, and the result is as shown in FIG. Fig.25 and Fig.26 In the substrate matching device shown, the first conductive portion 3 can be connected to a vacuum device to fix the first substrate 5 in the corresponding confined space 4.

[0176] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0177] The above embodiments only express the preferred implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A substrate matching device, characterized in that: include: Matching base; and at least one fixing unit, provided on the matching base, and used for fixing the corresponding first substrate on the matching base; Among them, each of the fixing units includes a limiting component and a first conductive portion, the limiting component includes a plurality of first limiting portions respectively arranged on the matching base, the plurality of first limiting portions are evenly spaced to form a limiting space that limits the corresponding first substrate on the matching base, the first conductive portion passes through the matching base and is arranged corresponding to the limiting space, and the first conductive portion is connected to a vacuum pumping device to fix the first substrate in the limiting space.

2. The substrate matching device according to claim 1, characterized in that: Each of the first limiting portions includes a first limiting body formed on the matching base and a second limiting body formed on the first limiting body.

3. The substrate matching device according to claim 2, characterized in that: The height of the first limiting body is 0.5 μm-3 μm, and the height of the second limiting body is 100 μm-1000 μm.

4. The substrate matching device according to claim 1, characterized in that: Each of the first limiting portions includes a first limiting surface for limiting the side surface of the first substrate, and each of the fixing units also includes a second limiting portion, the second limiting portion is formed on the matching base, the first limiting portion is arranged along the edge of the second limiting portion, the second limiting portion includes a second limiting surface for limiting the bottom surface of the first substrate, and the first limiting surface and the second limiting surface together form the limiting space.

5. The substrate matching device according to claim 4, characterized in that: The second limiting portion is formed on the upper surface of the matching base; The second limiting surface is lower than the upper surface of the matching base, or the second limiting surface is higher than the upper surface of the matching base, or the second limiting surface and the upper surface of the matching base are located on the same plane.

6. The substrate matching device according to claim 1, characterized in that: Each of the fixing units also includes a second conductive portion, wherein the second conductive portion is opened on the matching base, the first conductive portion is opened on the bottom surface of the second conductive portion and passes through the matching base, and the second conductive portion includes a plurality of first slot bodies and a plurality of second slot bodies, the plurality of first slot bodies are concentrically arranged and spaced from the inside to the outside, and the plurality of second slot bodies respectively connect the plurality of first slot bodies and the first conductive portion.

7. The substrate matching device according to claim 1, characterized in that: Each of the fixing units includes a plurality of the first conducting portions, and the first conducting portions are evenly spaced and distributed in the corresponding restricted space.

8. A method for preparing a substrate matching device, characterized in that: include: A matching base is provided; At least one limiting assembly is formed on the matching base, wherein the limiting assembly includes a plurality of first limiting portions, and the plurality of first limiting portions are evenly spaced and distributed to form a limiting space for limiting the first substrate on the matching base; A first conductive portion penetrating the matching base is formed on the matching base, and the first conductive portion can be connected to a vacuum pump to fix the first substrate in the corresponding confined space.

9. The method for preparing a substrate matching device according to claim 8, characterized in that: The at least one limiting component is formed on the matching base, comprising: forming a first pattern portion covering the upper surface of the matching base, so that the upper surface of the matching base includes a first surface not covered by the first pattern portion; forming a first layer structure covering at least the first surface; Removing the first pattern portion and the first layer structure not covering the first surface to form a first limiting body; A second limiting body is formed to cover the first limiting body, so as to obtain the first limiting portion including the first limiting body and the second limiting body.

10. The method for preparing a substrate matching device according to claim 8, characterized in that: The method further comprises: forming a second pattern portion on the matching base so that the upper surface of the matching base includes a second surface not covered by the second pattern portion; The second surface is etched to form second limiting portions corresponding to the limiting components one by one, and the second limiting portions and the corresponding limiting components are surrounded to form the limiting space.

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