Microsystem integrated packaging device and preparation method thereof
By introducing heat sinks of main modules and branch modules and magnetron sputtering deposited metal layers into the microsystem integrated package, the problem of insufficient heat dissipation capability in the prior art is solved, and more efficient heat dissipation and higher density integration are achieved.
Patent Information
- Application Number
- CN202411072751.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-06
- Publication Date
- 2024-12-13
AI Technical Summary
The existing integrated packaging methods of microsystems have increased heat dissipation paths due to the use of materials with poor thermal conductivity, resulting in a sharp increase in local temperatures within the microsystem, which limits performance improvement and integration increase and cannot meet higher heat dissipation needs.
Design a micro system integrated packaging device, adopting a radiator including a main module and a branch module, bonding with the electronic device through bonding interface materials, forming multiple heat dissipation paths, and depositing metal layers outside the radiator and plastic sealing layer to increase Large heat dissipation area, the metal layer is deposited using magnetron sputtering process to achieve more effective heat dissipation.
It effectively improves the heat dissipation ability of the integrated microsystem package, alleviates the problem of local temperature increase, increases the heat dissipation area, and supports higher density and high-performance microsystem integration.
Smart Images
Figure CN119133118A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of microsystem integrated packaging, and in particular to a microsystem integrated packaging device and a preparation method thereof. Background Art
[0002] High-density integrated microsystem packaging is an important way to improve the performance of electronic devices and microsystems and achieve multifunctionality. With the development of semiconductor technology and the increase in application requirements, the integration of microsystems continues to increase and the size continues to shrink, but the total power consumption cannot be reduced proportionally. Therefore, future microsystems are faced with smaller volume integration and higher power consumption.
[0003] In the prior art, microsystem integrated packaging mostly adopts plastic packaging to achieve better reliability performance. However, because the dielectric filling materials that electronic components such as chips are in direct contact with during operation are mostly materials with poor thermal conductivity such as epoxy resin, the thermal resistance on the heat dissipation path of the electronic device increases, and the heat cannot be effectively dissipated, causing the local temperature inside the microsystem to rise sharply during the operation of the electronic device, which to a certain extent limits the further improvement of the microsystem performance. On the other hand, due to the limitation of heat dissipation capacity, more chips cannot be integrated inside the microsystem at the same time, which also means that to achieve the same function, it is necessary to design multiple microsystems separately or increase the volume of a single microsystem, which restricts the development of miniaturization and miniaturization of microsystem integration.
[0004] In summary, under the development trend of high density, high performance, miniaturization and miniaturization of microsystem integrated packaging, the power consumption of a single microsystem will be significantly increased. However, the current microsystem integrated packaging method cannot meet the higher heat dissipation requirements. How to achieve efficient thermal management of microsystems at the micron / nanoscale is one of the key bottlenecks that need to be solved in microsystem integrated packaging. Summary of the invention
[0005] According to one aspect of the present application, a microsystem integrated packaging device is provided, comprising: a substrate, a surface of which is provided with a plurality of electronic devices; a heat sink, comprising a main body module and a plurality of branch modules; the main body module and the plurality of branch modules are integrally formed, the plurality of branch modules are located on one side of the main body module, and the plurality of branch modules are respectively correspondingly bonded to the surfaces of the plurality of electronic devices; a plastic sealing layer, used for plastic sealing the substrate and the heat sink; and a metal layer, deposited outside the heat sink and the plastic sealing layer.
[0006] According to some embodiments, the heat sink is made of a metal material or a semiconductor thermal conductive material.
[0007] According to some embodiments, the bonding point between the branch module and the electronic device is coated with an adhesive interface material to connect the branch module and the electronic device; the coating area of the adhesive interface material is smaller than the area of the bonding point so that no adhesive interface material overflows from the side of the electronic device.
[0008] According to some embodiments, the bonding interface material can be cured at a temperature below the melting point of solder without secondary melting.
[0009] According to some embodiments, at least one surface of the main body module is exposed outside the plastic packaging layer.
[0010] According to some embodiments, the material of the molding layer is an epoxy molding material, which includes epoxy resin.
[0011] According to some embodiments, the material of the metal layer includes stainless steel and copper.
[0012] According to one aspect of the present application, a method for preparing a microsystem integrated packaging device is provided, comprising: arranging a plurality of electronic devices on the surface of a substrate; processing a heat sink according to the distribution of the plurality of electronic devices on the surface of the substrate; wherein the heat sink comprises a main body module and a plurality of branch modules, the plurality of branch modules are arranged on one side of the main body module, and the main body module and the plurality of branch modules are integrally formed; respectively correspondingly fitting the plurality of branch modules to the surfaces of the plurality of electronic devices; plastic-sealing the substrate and the heat sink to form a plastic-sealing layer; and depositing a metal layer outside the heat sink and the plastic-sealing layer.
[0013] According to some embodiments, a method for preparing a microsystem integrated packaging device further includes: removing the plastic packaging layer from the surface of at least one side of the main body module where the plurality of branch modules are not arranged, so that at least one surface of the main body module is exposed outside the plastic packaging layer.
[0014] According to some embodiments, depositing a metal layer outside the heat sink and the plastic layer includes: depositing the metal layer outside the plastic layer and at least one surface of the main module exposed outside the plastic layer by a magnetron sputtering process.
[0015] According to the embodiments of the present application, a heat sink is introduced based on the existing electronic devices of the microsystem, and a heat dissipation path of the electronic devices is formed by bonding the heat sink to the electronic devices. The heat sink is easy to install and can effectively conduct the heat generated by the electronic devices, thereby increasing the heat dissipation area. The heat can be easily volatilized through connection with the outer surface metal layer.
[0016] It should be understood that the foregoing general description and the following detailed description are exemplary only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application.
[0018] Figure 1A schematic diagram showing a heat sink in a microsystem integrated packaging device according to an exemplary embodiment of the present application is shown.
[0019] Figure 2 A schematic diagram of a microsystem integrated packaging device according to an exemplary embodiment of the present application is shown.
[0020] Figure 3 A flow chart of a method for preparing a microsystem integrated packaging device according to an exemplary embodiment of the present application is shown. DETAILED DESCRIPTION
[0021] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this application will be comprehensive and complete and will fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar parts, and thus their repeated description will be omitted.
[0022] The described features, devices or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application may be put into practice without one or more of these specific details, or other modes, components, materials, devices or operations may be adopted. In these cases, known devices, methods, devices, realizations, materials or operations will not be shown or described in detail.
[0023] The flowcharts shown in the accompanying drawings are only exemplary and do not necessarily include all the contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps can be decomposed, and some operations / steps can be combined or partially combined, so the actual execution order may change according to actual conditions.
[0024] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units inherent to these processes, methods, products or devices.
[0025] The present application provides a microsystem integrated packaging device and a preparation method thereof, which can effectively improve the heat dissipation capacity of the microsystem integrated packaging structure.
[0026] A microsystem integrated packaging device and a method for preparing the same according to an embodiment of the present application will be described in detail below with reference to the accompanying drawings.
[0027] This application refers to the following terms:
[0028] SMT (Surface Mount Technology): A technology and process commonly used in the electronic assembly industry. It is a circuit assembly technology that mounts pinless or short-lead surface-mount components on the surface of a printed circuit board or other substrate and assembles them by soldering through reflow soldering or dip soldering.
[0029] FC (Flip Chip): The components are directly interconnected to the substrate, carrier or circuit board with the bumps on the chip facing downward. The wire bonding connection method is to place the front side of the chip facing upward and connect the chip to the circuit board through wires (usually gold wires).
[0030] DA (Die Attach): refers to the process of attaching the chip to the package substrate, usually using an adhesive to fix the chip to the substrate.
[0031] WB (Wire Bonding): A common chip pin connection method that uses gold wires to weld the chip pins to the pins on the package substrate.
[0032] Epoxy molding material: A thermosetting chemical material used for semiconductor packaging. It is a powdered molding compound made of epoxy resin as the base resin, high-performance phenolic resin as the curing agent, silicon micropowder as the filler, and a variety of additives. It is one of the main raw materials for subsequent packaging.
[0033] Magnetron sputtering process: a commonly used physical vapor deposition method with many advantages such as low deposition temperature, fast deposition speed, good uniformity of the deposited film, and a composition close to the target material.
[0034] Figure 1 A schematic diagram showing a heat sink in a microsystem integrated packaging device according to an exemplary embodiment of the present application is shown.
[0035] Figure 2 A schematic diagram of a microsystem integrated packaging device according to an exemplary embodiment of the present application is shown.
[0036] like Figure 1 , Figure 2 As shown, the microsystem integrated packaging device includes a heat sink 1 , a substrate 2 , a plastic packaging layer 3 and a metal layer 4 .
[0037] A plurality of electronic devices 21 are provided on the surface of the substrate 2 .
[0038] According to some embodiments, multiple electronic devices 21 of the microsystem (such as internal chips, RC and inductor electronic components) can be mounted on the surface of the substrate 2 through packaging processes such as SMT, FC, DA, and WB.
[0039] The heat sink 1 includes a main body module 11 and a plurality of branch modules 12. The main body module 11 and the plurality of branch modules 12 are integrally formed to achieve one-time mounting and increase the heat dissipation area.
[0040] According to some embodiments, the heat sink 1 may be made of a metal material with high thermal conductivity (such as copper), or may be made of a thermally conductive material in the semiconductor field such as aluminum nitride (chemical formula: AlN).
[0041] The plurality of branch modules 12 are respectively attached to the plurality of electronic devices 21 to form heat dissipation paths for the electronic devices.
[0042] According to some embodiments, the branch module 12 of the heat sink 1 can be customized according to the position, height, quantity, etc. of the electronic devices 21 (such as high-power chips) set on the substrate 2, so as to fit with the electronic devices 21 to form multiple heat dissipation paths.
[0043] like Figure 1 As shown, different heat dissipation paths conduct the heat generated by the electronic device 21 to the main module 11 of the radiator 1 through the branch module 12, and then the heat is dissipated outward from the main module 11 to ensure effective heat dissipation, avoid excessive heat concentration, and alleviate the situation of a sharp increase in local temperature inside the microsystem.
[0044] According to some embodiments, the area of the junction between the branch module 12 and the electronic device 21 may be greater than, less than, or equal to the surface area of the electronic device 21 on one side of the junction with the branch module 12 .
[0045] According to some embodiments, the cross-sectional shape of the branch module 12 parallel to the bonding portion of the electronic device 21 may be a polygon, such as a rectangle, a trapezoid, etc.
[0046] According to some embodiments, the bonding place between the branch module 12 and the electronic device 21 is coated with an adhesive interface material to connect the branch module 12 to the electronic device 21. The coating area of the adhesive interface material is smaller than the area of the bonding place between the branch module 12 and the electronic device 21, so that no adhesive interface material overflows from the side of the electronic device 21.
[0047] Optionally, the bonding interface material can be coated on the electronic device 21 with high power consumption and heat dissipation requirements through a dispensing process, and bonded to the branch module 12 of the radiator 1 through the bonding interface material.
[0048] According to some embodiments, the bonding interface material has good thermal conductivity and can solidify at a temperature below the melting point of solder (about 217° C.) without secondary melting, thereby avoiding material deformation, thermal damage to electronic devices and the formation of internal stress that may be caused by high welding temperature.
[0049] Optionally, the bonding interface material may be conductive silver glue, which can be cured at a temperature below 217° C. without secondary melting.
[0050] Furthermore, the coating thickness of the bonding interface material can be adjusted according to actual needs to ensure the bonding strength and prevent the bonding interface material from overflowing from the side of the electronic device 21 .
[0051] The plastic encapsulation layer 3 is used to encapsulate the substrate 2 and the heat sink 1 .
[0052] According to some embodiments, the plastic packaging layer 3 is formed by epoxy plastic packaging material, and its total height is higher than the height of the heat sink 1. The epoxy plastic packaging material includes epoxy resin.
[0053] Furthermore, after the molding layer 3 is formed, the molding layer 3 on the surface of at least one side of the main module 11 where the branch module 12 is not provided can be removed by a grinding process, so that at least one surface of the main module 11 is exposed outside the molding layer 3.
[0054] The metal layer 4 is deposited outside the plastic packaging layer 3 and the heat sink 1 , and the metal layer 4 is connected to at least one surface of the heat sink 1 .
[0055] According to some embodiments, the metal layer 4 is deposited outside the plastic layer 3 and the heat sink 1 by a magnetron sputtering process, so as to attach the metal layer to the upper surface and sidewalls of the microsystem, thereby realizing electromagnetic shielding of the microsystem. In addition, the metal layer 4 is well attached and physically connected to at least one exposed surface of the main module 11 of the heat sink 1, so as to maximize the heat dissipation area.
[0056] Optionally, the material of the metal layer 4 includes stainless steel and copper, and can be a three-layer structure of stainless steel + copper + stainless steel. Among them, the innermost layer of the metal layer 4 is a stainless steel layer to achieve good adhesion with the plastic packaging layer 3. The middle layer of the metal layer 4 is a copper layer to achieve the effectiveness of electromagnetic shielding. The outermost layer of the metal layer 4 is a stainless steel layer to protect the copper layer and prevent oxidation.
[0057] Figure 3 A flow chart of a method for preparing a microsystem integrated packaging device according to an exemplary embodiment of the present application is shown.
[0058] like Figure 3 As shown, in step S110, a plurality of electronic devices are arranged on the surface of the substrate.
[0059] According to some embodiments, multiple electronic devices can be mounted on the surface of a substrate through the SMT process, and the electronic devices can be pasted on the substrate through the DA process. Then, the metal leads can be tightly welded to the substrate pads through wire bonding to achieve electrical interconnection between the electronic devices and the substrate and information exchange between the electronic devices.
[0060] In step S120 , a heat sink is processed according to the distribution of the plurality of electronic components on the surface of the substrate.
[0061] According to some embodiments, a corresponding heat sink may be processed according to the distribution (e.g., position, height, quantity, etc.) of multiple electronic devices disposed on the surface of the substrate. The heat sink includes a main body module and multiple branch modules, and the multiple branch modules are disposed on one side of the main body module and correspond to the multiple electronic devices respectively.
[0062] According to some embodiments, the main body module and the plurality of branch modules of the heat sink may be formed by integral molding.
[0063] In step S130, a plurality of branch modules of the heat sink are bonded to surfaces of a plurality of electronic devices respectively.
[0064] According to some embodiments, an adhesive interface material may be applied to the surface of the electronic device where the branch modules of the heat sink and the corresponding electronic device are bonded, and then the heat sink may be mounted on the surface of the electronic device through an SMT process.
[0065] According to some embodiments, the heat sink may be mounted using a preset mounting device (eg, a suction nozzle), wherein the preset mounting device may be adjusted according to the electronic device actually used.
[0066] Furthermore, when the heat sink is mounted through the SMT process, the branch module of the heat sink can be well bonded to the surface of the electronic device by adjusting the mounting force, so as to avoid overflow of the bonding interface material.
[0067] According to some embodiments, the coating area of the bonding interface material is smaller than the area of the bonding point between the branch module and the electronic device, so that no bonding interface material overflows from the side of the electronic device.
[0068] In step S140 , the substrate and the heat sink are plastic-sealed to form a plastic-sealed layer.
[0069] According to some embodiments, epoxy molding material can be used to mold the substrate and the heat sink, and the molding layer on the surface of at least one side of the heat sink main module where the branch module is not set can be removed by grinding processes such as mechanical grinding, so that at least one surface of the main module is exposed outside the molding layer.
[0070] According to some embodiments, the preparation of the microsystem integrated package device further includes product information marking on the electronic device, ball implantation packaging of the substrate, and cutting of the substrate.
[0071] In step S150 , a metal layer is deposited outside the heat sink and the plastic packaging layer.
[0072] According to some embodiments, a metal layer may be deposited outside the heat sink and the plastic packaging layer by a magnetron sputtering process, and the metal layer may be attached and interconnected with the heat sink on at least one surface of the heat sink body module that is exposed outside the plastic packaging layer.
[0073] According to some embodiments of the present application, in the technical solution of the present application, a heat sink is introduced on the basis of a traditional microsystem integrated packaging device, so that the heat energy generated by each high-energy consumption electronic device is directly conducted to the main module of the heat sink by utilizing the branch modules of the heat sink, and at least one surface of the heat sink exposed to the plastic sealing layer is utilized to volatilize heat to the outside, thereby increasing the heat dissipation area, thereby further improving the heat dissipation capacity of the microsystem integrated packaging device.
[0074] The embodiments of the present application are described in detail above, and the description of the above embodiments is only used to help understand the method and core idea of the present application. At the same time, changes or deformations made by those skilled in the art based on the idea of the present application, the specific implementation method and the scope of application of the present application, all belong to the scope of protection of the present application. In summary, the content of this specification should not be construed as limiting the present application.
Claims
1. A microsystem integrated packaging device, characterized in that: include: A substrate, a surface of which is provided with a plurality of electronic devices; A radiator, comprising a main module and a plurality of branch modules; The main body module and the plurality of branch modules are integrally formed, the plurality of branch modules are located on one side of the main body module, and the plurality of branch modules are respectively correspondingly attached to the surfaces of the plurality of electronic devices; A plastic sealing layer, used for plastic sealing the substrate and the heat sink; The metal layer is deposited outside the heat sink and the plastic packaging layer.
2. The device according to claim 1, characterized in that The heat sink is made of metal material or semiconductor thermal conductive material.
3. The device according to claim 1, characterized in that The bonding portion between the branch module and the electronic device is coated with an adhesive interface material to connect the branch module and the electronic device; The coating area of the bonding interface material is smaller than the area of the bonding portion, so that no overflow of the bonding interface material occurs on the side of the electronic device.
4. The device according to claim 3, characterized in that The bonding interface material can be solidified at a temperature below the melting point of solder and will not melt again.
5. The device according to claim 1, characterized in that At least one surface of the main body module is exposed outside the plastic packaging layer.
6. The device according to claim 1, characterized in that The material of the plastic sealing layer is epoxy plastic sealing material, which includes epoxy resin.
7. The device according to claim 1, characterized in that The material of the metal layer includes stainless steel and copper.
8. A method for preparing a microsystem integrated packaging device, characterized in that: include: Arrange a plurality of electronic devices on the surface of the substrate; The heat sink is processed according to the distribution of the plurality of electronic devices on the surface of the substrate; wherein the heat sink comprises a main body module and a plurality of branch modules, the plurality of branch modules are arranged on one side of the main body module, and the main body module and the plurality of branch modules are integrally formed; The plurality of branch modules are respectively bonded to the surfaces of the plurality of electronic devices in a corresponding manner; Plastic-sealing the substrate and the heat sink to form a plastic-sealing layer; A metal layer is deposited outside the heat sink and the plastic packaging layer.
9. The method according to claim 8, characterized in that Also includes: The plastic sealing layer of at least one side of the surface of the main body module where the plurality of branch modules are not arranged is removed, so that at least one surface of the main body module is exposed outside the plastic sealing layer.
10. The method according to claim 9, characterized in that Depositing a metal layer outside the heat sink and the plastic packaging layer, comprising: The metal layer is deposited outside the plastic encapsulation layer and at least one surface of the main body module exposed outside the plastic encapsulation layer by a magnetron sputtering process.