Method and device for producing superconducting coils

Abstract

The present disclosure relates to a method for manufacturing a superconducting coil, the method comprising the steps of:-providing a structure (202); -a rotating structure; forming a first stack comprising a plurality of layers on the rotating structure in the cold chamber (103); and forming a second stack comprising a plurality of layers on the first stack of rotating structures in the hot chamber (105) at a temperature higher than the temperature in the cold chamber.

Description

[0001] This application is based on European Patent Application No. 22305437 filed on April 4, 2022, entitled “METHOD FOR MANUFACTURING SUPERCONDUCTING COILS AND DEVICE” and European Patent Application No. 22305449 filed on April 4, 2022, entitled “UNIFORM COATING OF A SURFACE”, and claims the priority benefit of the above applications, which are incorporated into this application by reference to the maximum extent permitted by law. Technical Field

[0002] The present disclosure relates to a method or process and an apparatus for manufacturing a superconducting coil. More specifically, the present disclosure relates to a method or an apparatus for multi-stage coating of a surface of a structure. In a broader definition, a structure can be, for example, a cylinder, i.e., a spatial surface composed of parallel straight lines (generator lines), which can be the inner surface or the outer surface of the cylinder. Background Art

[0003] Technologies that push the boundaries of current science must be employed to meet the challenges of the 21st century. Energy generation using nuclear fusion energy, medical procedures such as MRI machines, and transportation systems such as maglev trains all have in common that they require strong magnetic fields in a specific configuration to work properly. Therefore, the world of the future requires methods, devices, and mechanisms that can generate strong magnetic fields and meet the growing needs of industry.

[0004] The latest developments in magnetic fields make use of high temperature superconductors, HTS. HTS are materials that exhibit superconducting properties at temperatures generally above 77K (the boiling point of nitrogen). HTS materials exhibit zero electrical resistance in a superconducting environment, which is usually a matter of being at the right temperature. Since the electrical resistance is zero, electric current can flow freely and at high intensity through these superconducting materials. Ultimately, this makes it possible to generate magnetic fields of high intensity and with the specific properties required for this application.

[0005] Currently, magnetic devices are constructed with large magnets formed into the shape of coils; the magnets can be permanent or electromagnets, depending on cost or application. In applications where the magnetic field requires special construction, such as in stellarators, the coils must be twisted into complex shapes during construction. This significantly increases costs in the design phase; stellarator designs are very complex and require a lot of testing, so constructing many magnet coils takes a lot of time and money.

[0006] Reference to the construction of superconducting coils is U.S. Pat. No. 9,812,233 to Sazaki et al., which describes the current state of the art in the construction of films (also called tapes) of superconducting material. The current state of the art contemplates the production of tapes that are stacked to form a cable-like structure. This cable-like structure is then shaped as required by the application. It can be cut to shape, twisted, stacked, or otherwise processed.

[0007] U.S. Patent No. 8,655,423 to Miyazaki et al. describes a method for constructing a superconducting coil. Miyazaki describes a superconducting coil formed from multiple layers of different materials. A set of these layers is described as constituting a superconducting coil portion, which is formed from a thin film superconducting wire. The coil described by Miyazaki and the coils commonly found in the art are constructed by arranging a superconducting film (also called a superconducting tape) into a wire shape and then further configuring the wire into a coil shape. Based on a review of the prior art, a superconducting coil is formed by stacking superconducting films or superconducting layers so that current can flow in a desired direction and produce an appropriate magnetic field configuration.

[0008] To the best of the inventors' knowledge and understanding, the prior art does not teach any other method by which superconducting films or tapes may be used to conduct electrical current.

[0009] The tape itself can be constructed by several methods described in the art. A method for making high quality superconducting tape is disclosed in U.S. Pat. No. 10,935,799 to Majkic et al. Majkic's method is limited to applications requiring very thin tape structures. Less obvious from Majkic's description is how the process can overcome limitations such as different tape geometries. The method described in this prior art is limited to rectangles of appropriate size.

[0010] In U.S. Pat. No. 6,147,033 to Youm et al., an apparatus and method for forming a film on a tape substrate is disclosed. This apparatus further illustrates the limitations of current methods in the prior art. A thin film of superconducting material is deposited on a roller, which unwinds the tape substrate to form the tape. This method does not allow for shapes other than rectangular tape. In addition, if the tape is left on the roller for too long, the entire tape may be damaged.

[0011] Superconducting tapes themselves are in short supply, as they are in high demand. The size and shape of the tapes is also problematic, as they can only be constructed a few centimeters wide. Furthermore, the process of arranging the tapes into wires and further into coils is lengthy and prone to error.

[0012] Therefore, there remains a need for an efficient and less expensive alternative to coils used in magnetic applications. In addition, there is a need for a method or apparatus that enables the construction of superconducting coils that can be easily interchanged so that configuration changes can be achieved quickly and at a low cost. The prior art has not yet overcome the limitations of producing superconducting tapes of any shape or size, and the shapes are currently limited to rectangular geometries. Summary of the invention

[0013] One embodiment overcomes all or part of the disadvantages of known methods and apparatus for constructing superconducting coils.

[0014] One embodiment provides a method for manufacturing a superconducting coil, the method comprising the following steps:

[0015] - provide structure;

[0016] - Rotating structure;

[0017] - forming a first stack comprising multiple layers on a rotating structure in a cold chamber; and

[0018] - forming a second stack comprising multiple layers on the first stack in a rotating structure in a hot chamber at a temperature higher than the temperature in a cold chamber.

[0019] In one embodiment, forming the second stack includes depositing at least a layer of superconducting material and a layer of low resistivity material on the layer of superconducting material; and

[0020] The method also includes removing material from at least the layer of superconducting material and the layer of low-resistivity material to create a pattern that forms grooves in at least the layer of superconducting material and the layer of low-resistivity material.

[0021] In one embodiment, the method further comprises, after the spinning step and before forming the first stack, the step of electropolishing the structure in a wet chamber, for example using an electrolyte and electrodes.

[0022] In one embodiment, the wet chamber, cold chamber and hot chamber are a single chamber.

[0023] In another embodiment, the wet chamber, cold chamber and hot chamber are separate chambers.

[0024] In one embodiment:

[0025] - the step of forming the first stack in a cold chamber comprises using at least one injector, such as a nozzle and / or a target, suitable for a physical vapor deposition step; and / or

[0026] The step of forming the second stack in the hot chamber comprises using at least one injector, such as a nozzle and / or a target, suitable for a physical vapor deposition step and / or a chemical vapor deposition step.

[0027] In one embodiment, the temperature in the cold room is room temperature.

[0028] In one embodiment, the temperature in the hot chamber is above 500°C.

[0029] In one embodiment, forming the first stack comprises at least a physical vapor deposition step, such as sputtering, substrate tilt deposition, ion beam deposition and / or ion beam assisted deposition, the sputtering being for example magnetron sputtering.

[0030] In one embodiment, forming the first stack includes:

[0031] - depositing a first layer of a material such as aluminium oxide on the structure, for example using sputtering or ion beam deposition to deposit the first layer of material on the structure;

[0032] - depositing a second layer of material, such as yttrium oxide, on the first layer, for example using sputtering or ion beam deposition to deposit the second layer of material on the first layer; and

[0033] - Depositing a third layer of a material such as magnesium oxide or yttrium stabilized zirconium oxide on the second layer, for example using sputtering or ion beam assisted deposition to deposit the third layer of material on the second layer.

[0034] In one embodiment, forming the second stack comprises at least a physical vapor deposition step, such as sputtering or pulsed laser deposition, and / or a chemical vapor deposition step, such as a metal organic chemical vapor deposition step.

[0035] In one embodiment, forming the second stack includes depositing at least a layer of superconducting material such as rare earth barium copper oxide or yttrium barium copper oxide using metal organic chemical vapor deposition, such as using a vaporized precursor under uniform temperature and laminar flow, or using pulsed laser deposition.

[0036] In one embodiment, the superconducting material is rare earth barium copper oxide or yttrium barium copper oxide.

[0037] In one embodiment, the superconducting material layer is deposited using metal organic chemical vapor deposition, for example using a vaporized precursor under uniform temperature and laminar flow, or using pulsed laser deposition.

[0038] In one embodiment, forming the second stack comprises the step of depositing a layer of low resistivity material, such as silver, on the layer of superconducting material.

[0039] In one embodiment, the low resistivity material is silver.

[0040] In one embodiment, forming the second stack includes:

[0041] - heating the structure to a first temperature, for example between 700° C. and 800° C.;

[0042] - depositing a fourth layer of a material such as magnesium oxide or yttrium-stabilized zirconium oxide on the first stack, for example using metal organic chemical vapor deposition or pulsed laser deposition to deposit the fourth layer of material on the first stack;

[0043] - depositing a fifth layer of a material such as lanthanum manganate on the fourth layer, for example using metal organic chemical vapor deposition or pulsed laser deposition to deposit the fifth layer of material on the fourth layer;

[0044] - depositing a sixth layer of superconducting material on the fifth layer, for example using chemical vapor deposition, metal organic chemical vapor deposition or pulsed laser deposition to deposit the sixth layer of superconducting material on the fifth layer, the superconducting material being for example rare earth barium copper oxide or yttrium barium copper oxide;

[0045] - cooling the structure to a third temperature lower than the first temperature, for example between 450° C. and 600° C.; and

[0046] - depositing a seventh layer of a low resistivity material, such as silver, on the sixth layer, preferably using chemical vapor deposition or metal organic chemical vapor deposition.

[0047] In one embodiment, forming the second stack includes:

[0048] - heating the structure to a first temperature, for example between 700° C. and 800° C.;

[0049] - depositing a fourth layer of a material such as magnesium oxide or yttrium stabilized zirconium oxide on the first stack, for example using metal organic chemical vapor deposition or pulsed laser deposition to deposit the fourth layer of material on the first stack;

[0050] - depositing a fifth layer of a material such as lanthanum manganate on the fourth layer, for example using metal organic chemical vapor deposition or pulsed laser deposition to deposit the fifth layer of material on the fourth layer;

[0051] - depositing a layer of superconducting material on the fifth layer, for example using chemical vapor deposition, metal organic chemical vapor deposition or pulsed laser deposition to deposit a layer of superconducting material on the fifth layer;

[0052] - cooling the structure to a third temperature lower than the first temperature, for example between 450° C. and 600° C.; and

[0053] - depositing a layer of low resistivity material on the layer of superconducting material, preferably using chemical vapor deposition or metal organic chemical vapor deposition.

[0054] In one embodiment, the cooling step includes injecting an inert gas or steam at a fourth temperature lower than the third temperature.

[0055] In one embodiment, the step of depositing the sixth layer or superconducting material layer comprises filling the hot chamber with vaporized superconducting material precursor at a fifth temperature, for example between 250°C and 280°C.

[0056] In one embodiment, the method further comprises heating the structure to a second temperature higher than the first temperature, for example between 800°C and 900°C, between depositing the fifth layer and depositing the sixth layer or layer of superconducting material.

[0057] In one embodiment, the method further comprises repeating the step of forming a second stack in the same or different order to form at least a plurality of second stacks on the first stack, preferably repeating the step of forming a second stack multiple times, for example repeating the step of forming a second stack 4 to 80 times.

[0058] In one embodiment, the method further comprises, preferably after the step of forming the second stack or the plurality of second stacks:

[0059] - stop the rotation of the structure; and / or

[0060] - Cool the structure to room temperature.

[0061] One embodiment provides a superconducting coil obtained by the method according to the embodiment, the superconducting coil comprising:

[0062] -structure;

[0063] - a first structural stack comprising multiple layers;

[0064] - A second stack comprising multiple layers on the first stack.

[0065] In one embodiment, the second stack includes a superconducting material layer and a low-resistivity material layer on the superconducting material layer; and the superconducting coil further includes grooves in at least the superconducting material layer and the low-resistivity material layer.

[0066] In one embodiment:

[0067] - A first structurally multi-layer stack comprising:

[0068] - a first layer of a structural material such as aluminum oxide;

[0069] - a second layer of a material such as yttrium oxide on the first layer;

[0070] - a third layer of a material such as magnesium oxide on the second layer;

[0071] - at least one second multilayer stack on the first stack comprising:

[0072] - a fourth layer of a material such as magnesium oxide or yttrium stabilized zirconium oxide on the third layer;

[0073] - a fifth layer of a material such as lanthanum manganate on the fourth layer;

[0074] - a sixth layer of a superconducting material on the fifth layer, the superconducting material being, for example, rare earth barium copper oxide or yttrium barium copper oxide;

[0075] - a seventh layer of a low resistivity material, such as silver, on the sixth layer.

[0076] In one embodiment:

[0077] - A first stack of multiple layers comprising:

[0078] - a first layer of a structural material such as aluminum oxide;

[0079] - a second layer of a material such as yttrium oxide on the first layer; and

[0080] - a third layer of a material such as magnesium oxide on the second layer; and

[0081] - The second layer stack comprises:

[0082] - a fourth layer of a material such as magnesium oxide or yttrium stabilized zirconium oxide on the third layer;

[0083] - a fifth layer of a material such as lanthanum manganate on the fourth layer;

[0084] - a layer of superconducting material on the fifth layer, the superconducting material being, for example, rare earth barium copper oxide or yttrium barium copper oxide; and

[0085] - A layer of low resistivity material on the superconducting material layer, the low resistivity material being for example silver.

[0086] In one embodiment, the stack comprises a plurality of second stacks, and the order of the plurality of layers of different second stacks is the same or different.

[0087] In one embodiment, the structure consists of Hastelloy or is covered with a Hastelloy layer.

[0088] In one embodiment, the structure is a column.

[0089] One embodiment provides an apparatus for manufacturing a superconducting coil comprising a structure, wherein the apparatus is adapted to implement a method according to an embodiment and comprises:

[0090] - a rotating device, the rotating device being suitable for driving the structure in rotation; and preferably,

[0091] - at least one heating device, at least one heating device being adapted to heat the structure;

[0092] The device is suitable for being housed in a cold room, a hot room and / or a wet room. BRIEF DESCRIPTION OF THE DRAWINGS

[0093] The above features and advantages as well as other features and advantages will be described in detail in the following description of specific embodiments given by way of illustration and not limitation with reference to the accompanying drawings, in which:

[0094] Figure 1 is a block diagram of a method for manufacturing a superconducting coil.

[0095] Figure 2 is a perspective view of an apparatus for manufacturing a superconducting coil.

[0096] Figure 3 is through Figure 1 A close-up view of the structure of a superconducting coil constructed in a method for manufacturing a superconducting coil.

[0097] Figure 4A and Figure 4B is a perspective view of a superconducting coil, illustrating additional optional steps of a method for manufacturing the superconducting coil. DETAILED DESCRIPTION

[0098] In the various drawings, similar features are indicated by similar reference numerals. In particular, common structural and / or functional features in various embodiments may have the same reference numerals and may have the same structural characteristics, dimensional characteristics, and material characteristics.

[0099] For clarity, only the operations and elements that are helpful for understanding the embodiments described herein are described and illustrated in detail.

[0100] Unless otherwise specified, when referring to two elements being connected together, this means a direct connection without any intermediate elements except conductors, and when referring to two elements being coupled together, this means the two elements may be connected together or they may be coupled via one or more other elements.

[0101] In the following disclosure, unless otherwise stated, when referring to absolute position qualifiers such as terms "front", "back", "up", "down", "left", "right", or relative position qualifiers such as terms "above", "below", "high", "low", or orientation qualifiers such as "horizontal" and "vertical", they all refer to the orientation shown in the accompanying drawings.

[0102] Unless otherwise indicated, the expressions "about," "approximately," "substantially," and "approximately" mean within 10%, preferably within 5%.

[0103] The drawings are not drawn to scale. It should be noted that the figures refer to embodiments of methods and devices for manufacturing superconducting coils, sometimes referred to as methods or devices, respectively, where there is no ambiguity. Other embodiments are possible, as will be readily understood by a properly trained person. The actual size and / or shape of the components in the embodiments may vary. Only the important details of the embodiments are shown, but a person of ordinary skill in the art can understand how the entire device can be constructed without excessive experimentation. Some details are omitted in the drawings, but the inventor believes that adding these details is unnecessary for a full understanding of the features of the disclosed invention. These omitted details include elements for holding or fixing the device or its functional components, etc. For ease of understanding, certain features of the embodiments are enlarged. The disclosed embodiments and observed alternatives should not be construed as limiting the invention in any way.

[0104] In the accompanying drawings, the structure is a right cylindrical body (cylinder 202), and the surface to be coated is the outer surface of the cylinder. In another embodiment, the surface to be coated can be the inner surface of the cylinder. The structure with the surface to be coated can also be other shapes. In other embodiments, the surface to be coated can be the inner or outer surface of a non-cylindrical and / or non-straight cylinder, or the inner or outer surface of any other suitable structure.

[0105] Figure 2 2 is a perspective view of an embodiment of an apparatus 200 for manufacturing a superconducting coil using multi-stage coating. The apparatus includes a plurality of rotating rods 204 suitable for holding a planar ring or a hollow cylinder 202, which is not necessarily included in the apparatus. The cylinder 202 may be made of a material such as Hastelloy. The plurality of rods 204 for holding the cylinder 202 may also be a plurality of sticks, a large disk, a cylinder or a wheel. The plurality of rods 204 should be able to rotate, which may be achieved by using a motor or other appropriate device. In addition, the cylinder 202 should be held on the plurality of rods 204 by a device that enables the cylinder 202 to rotate with the plurality of rods 204. At least one of the plurality of rods 204 may be connected to a heating ring or a heating resistor 206. The heating resistor 206 heats the rod 204, which in turn heats the cylinder 202. The plurality of rods 204 may be used as electrodes for passing an electric current through the cylinder 202 to heat the cylinder. Figure 2 The device in the embodiment may be housed in a chamber suitable for performing chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD) or magnetron sputtering operations. Other heating methods may be used instead of the heating resistor 206. Other embodiments may use at least one inductive heating coil or an ohmic heating coil, which may be included inside the column 202.

[0106] When referring to a cylinder this also includes a planar ring or a hollow cylinder.

[0107] Other examples of apparatus for uniformly coating a surface, which can be used to manufacture superconducting coils, are given in European patent application EP22305449, entitled “UNIFORM COATING OF A SURFACE”, filed on April 4, 2022 by the same applicant “RENAISSANCE FUSION”, which is incorporated herein by reference to the maximum extent permitted by law.

[0108] Figure 1 1 is a block diagram of an embodiment of a method for manufacturing a superconducting coil. The method is divided into three main processes or stages. This is represented because the processing in the stages occurs in three different chambers: a wet chamber 101, a cold chamber 103, and a hot chamber 105.

[0109] The wet chamber 101 may be filled with an electrolyte to electropolish 106 the surface of the pillar 202. Therefore, the wet chamber 101 may also include electrodes for this purpose.

[0110] In the cold chamber 103, several processes can take place based on physical vapor deposition (PVD) techniques. In the embodiment shown, there are three processes: two processes are based on sputtering, typically magnetron sputtering, including an aluminum oxide sputtering step 108 suitable for depositing aluminum oxide and a yttria sputtering step 110 suitable for depositing yttria; one process is based on ion beam assisted deposition (IBAD), including an IBAD MgO step 112 suitable for depositing magnesium oxide (MgO).

[0111] Other PVD techniques can be used in cold chambers, depending on the material being deposited. For example:

[0112] - ion beam deposition (IBD) may be used instead of sputtering to deposit the aluminum oxide and / or yttrium oxide; and / or

[0113] - MgO can be deposited using sputtering (usually magnetron sputtering) or substrate tilted deposition (ISD) instead of IBAD.

[0114] Therefore, the cold chamber 103 preferably comprises at least one injector (such as a target or a nozzle), and / or may comprise a source, such as for magnetron sputtering and IBAD, depending on the technology used.

[0115] When referring to an injector, this may include a target or a nozzle, depending on the technology used.

[0116] The hot chamber 105 involves several processes based on physical vapor deposition (PVD) techniques and / or chemical vapor deposition (CVD) techniques. In the embodiment shown, at least six processes may be involved, including: in a heating step 120, the pillar 202 is heated to a temperature between 700°C and 800°C (a first temperature); three CVD and / or PVD steps suitable for depositing materials, a MgO step 118 suitable for depositing MgO, a LMO step 116 suitable for depositing lanthanum manganate (LMO), and a REBCO step 114 suitable for depositing rare earth barium copper oxide (REBCO) or another suitable superconducting material; in a cooling step 124, the pillar 202 is cooled to a temperature between 450°C and 600°C (a third temperature), for example, between 500°C and 600°C; and in an Ag step 122, a CVD or PVD step suitable for depositing a low resistivity material, in this example silver (Ag), on the surface of the pillar 202. It may be another low resistivity material other than silver, for example, a material with a resistivity of less than 5×10 at 20°C. -8 Ω.m materials, such as gold (Au), magnesium (Mg) or copper (Cu).

[0117] At this stage, the cylinder can be heated again in a step 120 of heating to between 700° C. and 800° C., for example to repeat the process step in the hot chamber at least once, or the cylinder can be stopped in a step 126 of stopping the rotation of the cylinder. The method can also include a step 128 of cooling to room temperature before, after or during the step 126 of stopping the rotation of the cylinder, where the process ends.

[0118] Currently, it is envisioned that the cooling step 124 to between 450° C. and 600° C. is accomplished by convection heating by injecting a gas or steam that is inert at a lower temperature (fourth temperature), but other approaches are possible.

[0119] Different CVD or PVD techniques can be used in a hot chamber, depending on the material to be deposited. For example:

[0120] - Standard CVD or MOCVD can be used to deposit MgO and / or LMO;

[0121] - MOCVD, metal organic deposition (MOD), reactive co-evaporation (RCE) as a CVD technique, or pulsed laser deposition (PLD) as a PVD technique, can be used to deposit REBCO or another superconducting material;

[0122] -Sputtering as a PVD technique (usually DC sputtering) can be used to deposit silver;

[0123] - Standard CVD or MOCVD can be used to deposit the epitaxial layer of silver.

[0124] If necessary, depending on the technology used in REBCO step 114, a heating step 115 to between 800°C and 900°C (a second temperature, for example between 850°C and 890°C) may be required between LMO step 116 and REBCO step 114 in order to heat column 202 to a temperature suitable for REBCO step 114.

[0125] The hot chamber 105 preferably includes at least one injector (eg, nozzle) for performing a CVD and / or PVD process, depending on the technology used.

[0126] The temperature ranges in the cold and hot chambers are related to the technology used and the material to be deposited. A person skilled in the art knows how to adapt them to other technologies and / or other materials.

[0127] The processing in the three chambers (wet chamber 101, cold chamber 103 and hot chamber 105) can be performed in three separate chambers, which means that the cartridge has to be taken out from one chamber and placed in the next chamber, or they can all be performed in a single chamber.

[0128] Operation Example

[0129] Now based on Figure 1 The processing shown and using Figure 2 The device description details the operation of the example.

[0130] The method shown starts in the wet chamber 101. In the wet chamber 101, in the step 104 of starting to rotate the cylinder, the cylinder 202 (such as Figure 2 The cylinder 202 shown in the figure rotates. A plurality of rods 204 rotate the cylinder 202. After the rotation starts, the cylinder 202 is immersed in an electrolyte, and in the electropolishing step 106, the surface is electropolished by appropriate electrodes. The electropolishing process can be accompanied by rinsing steps before and after polishing, as well as drying after polishing. In addition, the electropolishing step 106 can be repeated multiple times to achieve a certain degree of polishing. In an embodiment where the wet chamber 101 and the cold chamber 103 are separated, the cylinder 202 is now placed in the cold chamber 103.

[0131] In the cold chamber 103, at least one magnetron sputtering injector (such as a target or nozzle) deposits multiple layers of aluminum oxide and yttrium oxide, and the IBAD target deposits magnesium oxide MgO. The first step in the cold chamber 103 is the aluminum oxide sputtering step 108. The magnetron sputtering injector injects aluminum and oxygen into the chamber, depositing aluminum oxide on the surface of the pillar 202. Once the aluminum oxide is deposited, in a second step called the yttrium oxide sputtering step 110, the same magnetron sputtering injector or another magnetron sputtering injector injects yttrium and oxygen into the chamber, depositing yttrium oxide on the surface of the pillar. The last step in the cold chamber is to deposit MgO by ion beam assisted deposition using a target of magnesium and oxygen. This step is called IBAD MgO step 112. The steps in the cold chamber 103 can be performed at room temperature. However, in order to perform the subsequent steps of the method, the surface of the pillar 202 must be heated. The pillar 202 must then be transferred to a different chamber where its surface can be heated, or it can also be heated using a heating resistor 206.

[0132] The first step in the hot chamber 105 is to heat the pillars to between 700°C and 800°C in a heating to between 700°C and 800°C step 120. At this temperature, metal organic chemical vapor deposition MOCVD can be used to deposit MgO and LMO on top of the material deposited in the cold chamber 103. First, MgO is deposited using MOCVD in a MgO step 118. The hot chamber 105 is filled with a vaporized MgO precursor with a uniform temperature and laminar flow around the pillars 202, thereby depositing MgO on their surfaces. The same process is repeated in a LMO step 116, this time using a lanthanum manganate LMO precursor with a uniform temperature and laminar flow. After LMO deposition, the temperature in the hot chamber 105 can be further increased to 850°C, for example between 850°C and 890°C, in a heating to 800°C to 900°C step 115 before the REBCO step 114. As part of the REBCO step 114, a superconducting material such as rare earth barium copper oxide can be filled using a vaporized REBCO precursor that presents a laminar flow around the pillar 202. In one embodiment, the temperature of the REBCO precursor is between 250°C and 280°C (the fifth temperature). In each of the MgO step 118, the LMO step 116, and the REBCO step 114, for example, pulsed laser deposition (PLD) can be used instead of MOCVD. In the step 124 of cooling to between 450°C and 600°C, the pillar 202 is cooled in the next step. At this temperature, silver can be deposited on the surface of the pillar using chemical vapor deposition or metal organic chemical vapor deposition. Silver or another low resistivity material is deposited in the Ag step 122.

[0133] Once the silver is deposited, the column can now be heated again and the previous steps of the method repeated. The following six or seven steps can be repeated in order: heating to between 700°C and 800°C step 120, MOCVD MgO step 118, LMO step 116, in some cases heating to 850°C to 890°C step 115, REBCO step 114, cooling to 450°C to 600°C step 124, and (MO)CVD addition of Ag step 122. These steps can be repeated anywhere between 4 and 80 times in total, for example 20 to 40 times, which is believed to be suitable for at least the present embodiment.

[0134] At any step of the method, but preferably after the (MO)CVD addition step 122 of Ag, the cylinder 202 may be stopped by stopping the plurality of rods 204, which is a stop rotating cylinder step 126. Once the cylinder 202 is stopped, it may be cooled to room temperature in a cool to room temperature step 128. Thereafter, the cylinder 202 may be removed from the chamber and may be cut or used as required by the application.

[0135] Structure of superconducting coil

[0136] according to Figure 1 An example of a constructed superconducting coil 300 is composed of chemically or otherwise bonded layers, such as Figure 3 1. The first layer is a Hastelloy layer 302, which may be polished in an electropolishing step 106 in a wet chamber 101. Once the pillar 202 is in the cold chamber 103, the other layers are added. On top of the Hastelloy layer 302, a layer of aluminum oxide, namely, aluminum oxide layer 304, is sputtered in an aluminum oxide sputtering step 108. On top of the aluminum oxide layer 304, yttrium oxide, namely, yttrium oxide layer 306, is sputtered as part of a yttrium oxide sputtering step 110. On top of the yttrium oxide layer 306, a layer of MgO is deposited, which is done in an IBAD MgO step 112, and forms a first MgO layer 308. The pillar 202 is then introduced into the hot chamber 105, and the final layers are added. The next layer to be added is a second MgO layer 310. The second MgO layer 310 is deposited on top of the first MgO layer 308 by using MOCVD. The MOCVD process is also used to deposit a layer of lanthanum manganate LMO, i.e. LMO layer 312, on top of the second MgO layer 310. A layer of REBCO, i.e. REBCO layer 314, is deposited on top of the LMO layer 312, again using MOCVD. A layer of low resistivity material, in this example silver Ag, i.e. silver layer 316, is preferably deposited on top of the REBCO layer 314 using CVD or MOCVD. Forming the silver layer using (MO)CVD has the advantage of forming a layer with suitable crystals compared to, for example, sputtering techniques, which may be beneficial if a new layer sequence is formed on the silver layer.

[0137] All layers formed in the cold chamber may be referred to as a “first multilayer stack” or “first stack”, and all layers formed in the hot chamber may be referred to as a “second multilayer stack” or “second stack”.

[0138] Alumina, yttria, MgO, LMO layers may be referred to as “buffer layers.” Buffer layers may form a suitable template for forming superconducting layers.

[0139] The final sequence of four layers in the hot chamber 105, namely the second MgO layer 310, the LMO layer 312, the REBCO layer 314, and the silver layer 316, can be repeatedly deposited in the same or different order. These four layers can be repeatedly deposited on top of the layers deposited during processing in the cold chamber 103 (e.g., on top of the first MgO layer 308) to form a layered stack or wafer of 4 to 80 sequences (e.g., 20 to 40 sequences).

[0140] Other suitable materials and numbers of layers may be used in place of those described herein.

[0141] For example, a yttria-stabilized zirconia (YSZ) layer may be formed using PVD techniques such as sputtering, ISD, IBD, or IBAD to replace the MgO layer in a cold chamber, and an epitaxial YSZ layer may be formed using, for example, CVD, MOCVD, or a PVD technique such as IBAD to replace the MgO layer in a hot chamber.

[0142] As another example, the following sequence may preferably be formed on the Hastelloy layer 302 in the following order instead of the aforementioned sequence of layers:

[0143] - forming a first CeO2 layer and a YSZ layer in a cold chamber using PVD techniques such as IBD and / or sputtering;

[0144] - Forming the second CeO2 layer, the optional LMO layer, the REBCO layer and the silver layer in a hot chamber using PVD techniques and / or CVD techniques like one of the techniques already cited, depending on the materials to be deposited.

[0145] Other embodiments may replace the REBCO of the REBCO layer 314 with other rare earth materials that exhibit high temperature superconductivity, such as YBCO.

[0146] Other embodiments may replace the silver of silver layer 316 with another low resistivity material such as gold, magnesium, or copper.

[0147] In one embodiment, the last silver layer, i.e. the silver layer of the last layer sequence in the case of repeating layers 310, 312, 314, 316, can be replaced by a copper layer. In fact, a silver layer may be particularly suitable as a starting layer of a repeating layer, but may be of little significance in the last sequence without subsequent repeats thereon, and a copper layer is cheaper, grows faster using, for example, electroplating, and is harder than silver.

[0148] Additional Embodiments

[0149] After forming the final low-resistivity material layer, additional steps may be provided to remove material from at least the low-resistance material layer, the superconducting layer, and possibly at least partially in the buffer layer and / or the multilayer stack to create a pattern forming one or more grooves 410, such as Figure 4B The pattern shape may depend on the application. To remove material, a Figure 4A The laser patterning 401 is shown. Other techniques such as mechanical techniques or photolithography can also be used. The grooves can be filled with metal (eg silver).

[0150] The cylinder of superconducting coil can be processed to have a specific shape, and the superconducting coil can be assembled to another superconducting coil of similar or different shape, like multiple modular coils, to form an assembly. For example, multiple superconducting coils can be assembled to form a stellarator.

[0151] Example embodiments of the present invention are summarized here. Other embodiments may also be understood from the entire specification and claims submitted herein.

[0152] Example 1: A method for manufacturing a superconducting coil, the method comprising the following steps:

[0153] - providing a structure (202);

[0154] - rotating the structure;

[0155] - forming a first stack comprising multiple layers on said rotating structure in a cold chamber (103); and

[0156] - forming a second stack comprising multiple layers on said first stack of rotating structures in a hot chamber (105) at a temperature higher than the temperature in said cold chamber.

[0157] Example 2: The method according to Example 1 also includes: after the rotating step and before forming the first stack, a step of electropolishing the structure in a wet chamber (101), for example using an electrolyte and an electrode.

[0158] Example 3: The method according to Example 2, wherein the wet chamber (101), the cold chamber (103) and the hot chamber (105) are a single chamber.

[0159] Example 4: The method according to Example 2, wherein the wet chamber (101), the cold chamber (103) and the hot chamber (105) are separate chambers.

[0160] Example 5: A method according to any one of Examples 1 to 4, wherein:

[0161] - the step of forming said first stack in said cold chamber (103) comprises using at least one injector, such as a nozzle and / or a target, suitable for a physical vapor deposition step; and / or

[0162] - the step of forming said second stack in said hot chamber (105) comprises using at least one injector, such as a nozzle and / or a target, suitable for a physical vapor deposition step and / or a chemical vapor deposition step.

[0163] Example 6: The method according to any one of Examples 1 to 5, wherein the temperature in the cold chamber (103) is room temperature and / or the temperature in the hot chamber is higher than 500°C.

[0164] Example 7: A method according to any one of Examples 1 to 6, wherein forming the first stack includes at least a physical vapor deposition step, such as sputtering, substrate tilt deposition, ion beam deposition and / or ion beam assisted deposition, and the sputtering is, for example, magnetron sputtering.

[0165] Example 8: The method of any one of Examples 1 to 7, wherein forming the first stack comprises:

[0166] - depositing a first layer (304) of a material such as aluminium oxide on the structure (202), for example using sputtering or ion beam deposition to deposit the first layer (304) of the material on the structure (202);

[0167] - depositing a second layer (306) of a material such as yttrium oxide on said first layer (304), for example using sputtering or ion beam deposition to deposit said second layer (306) of said material on said first layer (304); and

[0168] - depositing a third layer (308) of a material such as magnesium oxide or yttrium stabilized zirconium oxide on said second layer (306), for example using sputtering or ion beam assisted deposition.

[0169] Example 9: A method according to any one of Examples 1 to 8, wherein forming the second stack includes at least a physical vapor deposition step, such as sputtering or pulsed laser deposition, and / or a chemical vapor deposition step, such as a metal organic chemical vapor deposition step.

[0170] Example 10: A method according to any one of Examples 1 to 9, wherein forming the second stack includes depositing at least a superconducting material layer (314) using a metal organic chemical vapor deposition method (e.g., using a vaporized precursor under uniform temperature and laminar flow) or using pulsed laser deposition, wherein the superconducting material is, for example, rare earth barium copper oxide or yttrium barium copper oxide.

[0171] Example 11: The method of Example 10, wherein forming the second stack includes the step of depositing a layer of low resistivity material (316) on the layer of superconducting material (314), the low resistivity material being, for example, silver.

[0172] Example 12: The method of any one of Examples 1 to 11, wherein forming the second stack comprises:

[0173] - heating the structure (202) to a first temperature, for example between 700° C. and 800° C.;

[0174] - depositing a fourth layer (310) of a material such as magnesium oxide or yttrium-stabilized zirconium oxide on said first stack, for example using metal organic chemical vapor deposition or pulsed laser deposition to deposit said fourth layer (310) of said material on said first stack;

[0175] - depositing a fifth layer (312) of a material such as lanthanum manganate on the fourth layer, for example using metal organic chemical vapor deposition or pulsed laser deposition to deposit the fifth layer (312) of the material on the fourth layer;

[0176] - depositing a sixth layer (314) of superconducting material on the fifth layer, for example using chemical vapor deposition, metal organic chemical vapor deposition or pulsed laser deposition to deposit the sixth layer (314) of superconducting material on the fifth layer, the superconducting material being for example rare earth barium copper oxide or yttrium barium copper oxide;

[0177] - cooling the structure to a third temperature lower than the first temperature, for example between 450° C. and 600° C.; and

[0178] A seventh layer (316) of low resistivity material, such as silver, is deposited on the sixth layer, preferably using chemical vapor deposition or metal organic chemical vapor deposition. The seventh layer (316) of low resistivity material, such as silver, is deposited on the sixth layer.

[0179] Example 13: The method of Example 12, wherein the cooling step includes injecting an inert gas or steam at a fourth temperature lower than the third temperature.

[0180] Example 14: The method according to Example 12 or 13, wherein the step of depositing the sixth layer (314) includes filling the vaporized superconducting material precursor into the hot chamber at a fifth temperature, the fifth temperature being, for example, between 250°C and 280°C.

[0181] Example 15: The method according to any one of Examples 12 to 14 further includes heating the structure (202) to a second temperature higher than the first temperature between depositing the fifth layer and depositing the sixth layer, the second temperature being, for example, between 800°C and 900°C.

[0182] Example 16: The method according to any one of Examples 1 to 15 further includes repeating the step of forming the second stack in the same or different order to form at least multiple second stacks on the first stack, preferably repeating the step of forming the second stack multiple times, for example repeating the step of forming the second stack 40 to 80 times.

[0183] Example 17: The method according to any one of Examples 1 to 16, further comprising, preferably after the step of forming the second stack or the plurality of second stacks:

[0184] - stopping the rotation of the structure; and / or

[0185] - Cooling the structure to room temperature.

[0186] Example 18: A superconducting coil (300) obtained by the method according to any one of Examples 1 to 17, the superconducting coil comprising:

[0187] - structure (202);

[0188] - a first stack comprising multiple layers on said structure;

[0189] - a second stack comprising multiple layers on said first stack.

[0190] Example 19: The superconducting coil (300) of Example 18, wherein:

[0191] - said first stack of multiple layers on said structure comprises:

[0192] - a first layer (304) of a material such as aluminium oxide on the structure;

[0193] - a second layer (306) of a material such as yttrium oxide on said first layer;

[0194] - a third layer (308) of a material such as magnesium oxide on said second layer;

[0195] - at least one second stack of multiple layers on said first stack comprising:

[0196] - a fourth layer (310) of a material such as magnesium oxide or yttrium stabilized zirconium oxide on the third layer;

[0197] - a fifth layer (312) of a material such as lanthanum manganate on said fourth layer;

[0198] - a sixth layer (314) of superconducting material on the fifth layer, the superconducting material being, for example, rare earth barium copper oxide or yttrium barium copper oxide;

[0199] - a seventh layer (316) of a low resistivity material on said sixth layer, said low resistivity material being for example silver.

[0200] Example 20: The superconducting coil according to Example 18 or 19 comprises a plurality of second stacks, wherein the order of the plurality of layers of different second stacks is the same or different.

[0201] Example 21: A method according to any one of Examples 1 to 17, or a superconducting coil according to any one of Examples 18 to 20, wherein the structure (202) is composed of Hastelloy or is covered by a Hastelloy layer (302), and / or the structure is a column.

[0202] Example 22: An apparatus (200) for manufacturing a superconducting coil including a structure (202), wherein the apparatus is suitable for implementing the method according to any one of Examples 1 to 17 and comprises:

[0203] - a rotating device, said rotating device being suitable for driving said structure in rotation; and preferably,

[0204] - at least one heating device (206), the at least one heating device (206) being suitable for heating the structure;

[0205] The device is suitable for being housed in a cold room (103), a hot room (105) and / or a wet room (101).

[0206] Example 23: An apparatus according to Example 22, wherein the rotating device is suitable for maintaining the structure.

[0207] Example 24: The apparatus of Example 22 or 23, wherein the rotating device comprises:

[0208] at least one roller (204), preferably a plurality of rollers, adapted to be coupled to another surface of the device (202) than the surface to be coated, such that rotation of the at least one roller causes rotation of the structure; and

[0209] - at least one drive unit, such as a motor, adapted to be coupled to the at least one rolling element so as to drive the at least one rolling element in rotation.

[0210] Example 25: The device of Example 24, wherein the at least one rolling member (204) is a stick, a rod, a disk, a column or a wheel.

[0211] Example 26: A device according to any one of Examples 22 to 25, wherein the heating device includes a heating resistor (206), an inductive coil or an ohmic heating coil connected to the at least one rolling element (204).

[0212] Various embodiments and variations have been described. Those skilled in the art will appreciate that certain features of these embodiments may be combined together, and those skilled in the art will readily conceive of other variations.

[0213] Finally, based on the functional description provided above, the actual implementation of the embodiments and variations described herein is within the capabilities of those skilled in the art.

[0214] List of abbreviations:

[0215] HTS: High Temperature Superconductor

[0216] Ag:Silver

[0217] LMO: Lanthanum manganate

[0218] MgO:Magnesium oxide

[0219] REBCO: Rare Earth Barium Copper Oxide

[0220] YBCO: Yttrium Barium Copper Oxide

[0221] YSZ: Yttrium Stabilized Zirconia

[0222] CeO2: Cerium Oxide

[0223] PVD: Physical Vapor Deposition

[0224] IBAD: Ion Beam Assisted Deposition

[0225] IBD: Ion Beam Deposition

[0226] PLD: pulsed laser deposition

[0227] ISD: Insulated Deposition

[0228] CVD: Chemical Vapor Deposition

[0229] MOCVD: Metal Organic Chemical Vapor Deposition

[0230] MOD: Metal Organic Deposition

[0231] RCE: Reactive Co-evaporation

Claims

1. A method for manufacturing a superconducting coil, the method The following steps are involved: - providing a structure (202); - rotating the structure; - forming a first stack comprising multiple layers on the rotating structure in a cold chamber (103); as well as - forming a second stack comprising multiple layers on said first stack of rotating structures in a hot chamber (105) at a temperature higher than the temperature in said cold chamber; wherein forming the second stack comprises depositing at least a layer (314) of superconducting material and a layer (316) of low resistivity material on the layer (314) of superconducting material; and The method also includes removing material from at least the layer of superconducting material and the layer of low-resistivity material to create a pattern that forms grooves (410) in at least the layer of superconducting material and the layer of low-resistivity material.

2. The method according to claim 1, further comprising: include: After said spinning step and before forming said first stack, there is a step of electropolishing said structure in a wet chamber (101), for example using an electrolyte and electrodes.

3. The method according to claim 2, in, The wet chamber (101), the cold chamber (103) and the hot chamber (105) are a single chamber.

4. The method according to claim 2, in, The wet chamber (101), the cold chamber (103) and the hot chamber (105) are separate chambers.

5. The method according to any one of claims 1 to 4, in, - the step of forming said first stack in said cold chamber (103) comprises using at least one injector, such as a nozzle and / or a target, suitable for a physical vapor deposition step; and / or - the step of forming said second stack in said hot chamber (105) comprises using at least one injector, such as a nozzle and / or a target, suitable for a physical vapor deposition step and / or a chemical vapor deposition step.

6. The method according to any one of claims 1 to 5, in, The temperature in the cold chamber (103) is room temperature and / or the temperature in the hot chamber is above 500°C.

7. The method according to any one of claims 1 to 6, in, Forming the first stack comprises at least a physical vapor deposition step, such as sputtering, substrate tilt deposition, ion beam deposition and / or ion beam assisted deposition, the sputtering being, for example, magnetron sputtering.

8. The method according to any one of claims 1 to 7, in, Forming the first stack includes: - depositing a first layer (304) of a material such as aluminium oxide on the structure (202), for example using sputtering or ion beam deposition to deposit the first layer (304) on the structure (202); - depositing a second layer (306) of a material such as yttrium oxide on said first layer (304), for example depositing said second layer (306) on said first layer (304) using sputtering or ion beam deposition; and - depositing a third layer (308) of a material such as magnesium oxide or yttrium stabilized zirconium oxide on said second layer (306), for example depositing said third layer (308) on said second layer (306) using sputtering or ion beam assisted deposition.

9. The method according to any one of claims 1 to 8, in, Forming the second stack comprises at least a physical vapor deposition step, such as sputtering or pulsed laser deposition, and / or a chemical vapor deposition step, such as a metal organic chemical vapor deposition step.

10. The method according to any one of claims 1 to 9, in, The superconducting material is rare earth barium copper oxide or yttrium barium copper oxide, and / or the superconducting material layer (314) is deposited using metal organic chemical vapor deposition, for example using vaporized precursors under uniform temperature and laminar flow, or using pulsed laser deposition.

11. The method according to claim 10, in, The low resistivity material is silver.

12. The method according to any one of claims 1 to 11, in, Forming the second stack includes: - heating the structure (202) to a first temperature, for example between 700° C. and 800° C.; - depositing a fourth layer (310) of a material such as magnesium oxide or yttrium-stabilized zirconium oxide on said first stack, for example depositing said fourth layer (310) on said first stack using metal organic chemical vapor deposition or pulsed laser deposition; - depositing a fifth layer (312) of a material such as lanthanum manganate on the fourth layer, for example depositing the fifth layer (312) on the fourth layer using metal organic chemical vapor deposition or pulsed laser deposition; - depositing the layer of superconducting material (314) on the fifth layer, for example using chemical vapor deposition, metal organic chemical vapor deposition or pulsed laser deposition to deposit the layer of superconducting material (314) on the fifth layer; - cooling the structure to a third temperature lower than the first temperature, for example between 450° C. and 600° C.; and - depositing the low resistivity material layer (316) on the superconducting material layer (314), preferably using chemical vapor deposition or metal organic chemical vapor deposition to deposit the low resistivity material layer (316) on the superconducting material layer (314).

13. The method according to claim 12, in, The cooling step includes injecting an inert gas or steam at a fourth temperature lower than the third temperature.

14. The method according to claim 12 or 13, in, The step of depositing the superconducting material layer (314) includes filling the thermal chamber with vaporized superconducting material precursor at a fifth temperature, for example, between 250°C and 280°C.

15. The method according to any one of claims 12 to 14, further comprising heating the structure (202) to a second temperature higher than the first temperature between depositing the fifth layer (312) and depositing the superconducting material layer (314), the second temperature being, for example, between 800°C and 900°C.

16. The method according to any one of claims 1 to 15, further comprising repeating the step of forming the second stack in the same or different order to form at least a plurality of the second stacks on the first stack, preferably repeating the step of forming the second stack multiple times, for example repeating the step of forming the second stack 4 to 80 times.

17. A superconducting coil (300) obtained by the method according to any one of claims 1 to 16, the superconducting coil include: - structure (202); - a first stack comprising multiple layers on said structure; - a second stack of multiple layers on the first stack, the second stack comprising a layer of superconducting material (314) and a layer of low resistivity material (316) on the layer of superconducting material (314); as well as - recesses (410) at least in said layer of superconducting material and said layer of low-resistivity material.

18. The superconducting coil (300) according to claim 17, in, - the first stack of multiple layers comprises: - a first layer (304) of a material such as aluminium oxide on the structure; - a second layer (306) of a material such as yttrium oxide on said first layer; and - a third layer (308) of a material such as magnesium oxide on said second layer; and - the second stack of multiple layers comprises: - a fourth layer (310) of a material such as magnesium oxide or yttrium stabilized zirconium oxide on said third layer; - a fifth layer (312) of a material such as lanthanum manganate on said fourth layer; - a layer of superconducting material (314) on the fifth layer, the superconducting material being, for example, rare earth barium copper oxide or yttrium barium copper oxide; and - a low resistivity material layer (316) on the superconducting material layer (314), the low resistivity material being, for example, silver.

19. The superconducting coil according to claim 17 or 18, comprising a plurality of the second stacks, wherein the order of the plurality of layers in different second stacks is the same or different.

20. An apparatus (200) for manufacturing a superconducting coil comprising a structure (202), wherein the apparatus is adapted to implement the method according to any one of claims 1 to 16, and wherein the apparatus include: - a rotating device, the rotating device being suitable for driving the structure in rotation; and preferably, - at least one heating device (206), the at least one heating device (206) being suitable for heating the structure; Wherein, the device is suitable for being accommodated in the cold chamber (103), the hot chamber (105) and / or the wet chamber (101).

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