Magnetic sensor device

Abstract

The invention provides a magnetic sensor device which is high in degree of freedom of design of a wiring layer and stable in output performance. A magnetic sensor device (1) is provided with: a plurality of magnetic detection element arrays (30) formed on a first layer (L1); and a wiring layer (4) formed on a second layer (L2) different from the first layer (L1) and electrically connected to the plurality of magnetic detection element arrays (30). The plurality of magnetic detection element arrays (30) include a first magnetic detection element array (31), the wiring layer (4) overlaps the first magnetic detection element array (31) so as to include the entire first magnetic detection element array (31) in a plane perpendicular direction (Z) from the second layer (L2) toward the first layer (L2), and the plurality of magnetic detection element arrays (30) do not overlap the outline (O4) of the wiring layer (4).

Description

Technical Field

[0001] The present disclosure relates to magnetic sensor devices. Background Art

[0002] The magnetic sensor device has a magnetic detection element made of magnetic material. When an external force is applied to the magnetic material, the response to the magnetic field changes due to the inverse magnetostrictive effect. In particular, although the tunnel magnetoresistance effect element has excellent output performance with a large MR ratio, the output performance is easily changed by external force.

[0003] In a magnetic sensor device, there is a method of connecting a magnetic detection element to the outside by using a non-bent wiring layer instead of a bent bonding wire. In such a magnetic sensor device, there is a problem that the thermal stress of the wiring layer that expands or contracts due to temperature changes acts on the magnetic detection element. In Patent Document 1, in order to solve the technical problem that when a semiconductor device is heated, stress based on thermal deformation of the wiring layer is generated, causing the stress of the wiring layer to reach the sensor element, a semiconductor device is disclosed, in which the wiring portion is arranged at a position that does not overlap with the sensor element in the thickness direction of the semiconductor chip.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2005-277034 Summary of the invention

[0007] Technical problem to be solved by the invention

[0008] However, in the semiconductor device of Patent Document 1, since the wiring portion must be routed at a position that does not overlap with the sensor element in the thickness direction of the semiconductor chip, the layout of the wiring portion is greatly restricted.

[0009] The present disclosure has been made in view of the above-mentioned problems, and an object of the present disclosure is to provide a magnetic sensor device having a high degree of freedom in designing a wiring layer and stable output performance.

[0010] Means for solving technical problems

[0011] A magnetic sensor device according to one embodiment of the present disclosure includes: a plurality of magnetic detection element arrays formed on a first layer; and a wiring layer formed on a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays. The plurality of magnetic detection element arrays include a first magnetic detection element array, and in a plane perpendicular direction from the second layer toward the first layer, the wiring layer overlaps with the first magnetic detection element array in a manner that includes the entire first magnetic detection element array, and the plurality of magnetic detection element arrays do not overlap with the contours of the wiring layer.

[0012] The position overlapping with the outline of the wiring layer in the vertical direction of the surface is easily affected by the thermal stress from the wiring layer. According to this method, since the plurality of magnetic detection element arrays do not overlap with the outline of the wiring layer, they are not easily affected by the thermal stress of the wiring layer, and a magnetic sensor with stable output performance can be provided. Since the wiring layer overlaps with the first magnetic detection element array in a manner that includes the first magnetic detection element array as a whole, the wiring layer can be configured in a manner that all magnetic detection element arrays do not overlap with the outline of the wiring layer without making the first magnetic detection element array detour. Compared with the situation where all magnetic detection element arrays must be detour, the degree of freedom in the design of the wiring layer can be increased.

[0013] In the above method, it may be that the multiple magnetic detection element arrays also include a second magnetic detection element array, the first magnetic detection element array and the second magnetic detection element array are connected in series via the output port to form a part of a bridge circuit, and in the direction perpendicular to the surface, the wiring layer overlaps with the second magnetic detection element array in a manner that includes the entire second magnetic detection element array.

[0014] According to this method, not only the first magnetic detection element array does not need to be detoured, but also the second magnetic detection element array does not need to be detoured, and the wiring layer can be arranged in a manner that all magnetic detection element arrays do not overlap with the outline of the wiring layer. As described later, when the resistance ratio of the first magnetic detection element array and the second magnetic detection element array constituting the parallel circuit of the bridge circuit changes, the output performance of the magnetic sensor device becomes unstable, but according to this method, the first magnetic detection element array and the second magnetic detection element array are not easily affected by the thermal stress of the wiring layer, and the balance condition of the bridge circuit is not easily changed, so the output performance of the magnetic sensor device can be stabilized.

[0015] In the above method, it is also possible that a dummy pattern is formed in the second layer and is not electrically connected to the multiple magnetic detection element arrays, and the multiple magnetic detection element arrays also include a second magnetic detection element array. In the direction perpendicular to the surface, the dummy pattern overlaps with the second magnetic detection element array in a manner that includes the entire second magnetic detection element array, and the multiple magnetic detection element arrays do not overlap with the outline of the dummy pattern.

[0016] According to this method, when it is difficult to arrange the wiring layer in a manner that includes the entire second magnetic detection element array, the dummy pattern can replace the wiring layer to include the entire second magnetic detection element array, so the degree of freedom in designing the wiring layer can be increased. Since the plurality of magnetic detection element arrays overlap neither the outline of the wiring layer nor the outline of the dummy pattern, it is possible to provide a magnetic sensor that is not easily affected by the thermal stress of the wiring layer and the dummy pattern and has stable output performance.

[0017] In the above aspect, the first magnetic detection element array and the second magnetic detection element array may be connected in series via the output port to form a part of a bridge circuit.

[0018] According to this method, the wiring layer includes the entire first magnetic detection element array, and the dummy pattern includes the entire second magnetic detection element array, so that the wiring layer can be arranged in a manner that the entire magnetic detection element array overlaps neither the outline of the wiring layer nor the outline of the dummy pattern. Since the first magnetic detection element array and the second magnetic detection element array are not easily affected by the thermal stress of the wiring layer and the dummy pattern, the balance condition of the bridge circuit is not easily changed, so the output performance of the magnetic sensor device can be stabilized.

[0019] A magnetic sensor device according to another embodiment of the present disclosure includes: a plurality of magnetic detection element arrays formed on a first layer; a wiring layer formed on a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays; and a dummy pattern formed on the second layer and not electrically connected to the plurality of magnetic detection element arrays. The plurality of magnetic detection element arrays include a second magnetic detection element array, the dummy pattern overlaps with the second magnetic detection element array in a direction perpendicular to the surface from the second layer toward the first layer in a manner that includes the entire second magnetic detection element array, and the plurality of magnetic detection element arrays do not overlap with the contours of the wiring layer and the contours of the dummy pattern.

[0020] According to this method, since the plurality of magnetic detection element arrays do not overlap with the contour of the dummy pattern, it is possible to provide a magnetic sensor that is not easily affected by the thermal stress of the dummy pattern and has stable output performance. Since the wiring layer may include the entire first magnetic detection element array or may not include the entire first magnetic detection element array, either method is acceptable, the degree of freedom in the design of the wiring layer can be further increased.

[0021] In the above method, it may also be that the multiple magnetic detection element arrays also include a first magnetic detection element array, the first magnetic detection element array and the second magnetic detection element array are connected in series via an output port to form a part of a bridge circuit, and in a direction perpendicular to the surface, the virtual pattern overlaps with the first magnetic detection element array in a manner that includes the entire first magnetic detection element array.

[0022] According to this method, since the dummy pattern overlaps in a manner including the entire first magnetic detection element array and the second magnetic detection element array, the first magnetic detection element array and the second magnetic detection element array are not easily affected by the thermal stress of the wiring layer, similar to the case where the wiring layer is overlapped in a manner including the entire first magnetic detection element array and the second magnetic detection element array. Since the balance condition of the bridge circuit is not easily changed, the output performance of the magnetic sensor device can be stabilized.

[0023] In the above embodiment, the angle sensor may include a magnetic sensor device, the magnetic compass may include a magnetic sensor device, the current sensor may include a magnetic sensor device, and the autofocus mechanism and / or optical shake correction mechanism of the camera module may include a magnetic sensor device.

[0024] According to these aspects, the magnetic sensor device can be used for various purposes.

[0025] Effects of the Invention

[0026] According to the present disclosure, it is possible to provide a magnetic sensor device having a high degree of freedom in designing a wiring layer and having stable output performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a perspective view showing a magnetic sensor device according to one embodiment.

[0028] Figure 2 It indicates schematically Figure 1 A cross-sectional view of an example of the internal structure of the magnetic sensor device shown.

[0029] Figure 3 Yes Description Figure 1 A perspective view of the manufacturing process of the magnetic sensor device shown.

[0030] Figure 4 This is a diagram showing an example of a magnetic sensor device configured as an angle sensor.

[0031] Figure 5 This is a plan view showing an example of a magnetic sensor device configured as a magnetic compass.

[0032] Figure 6 FIG. 1 is a diagram showing an example of a magnetic sensor device used as a part of a current sensor.

[0033] Figure 7 Yes means Figure 6 The circuit structure of the current sensor is shown in the figure.

[0034] Figure 8 This is a perspective view showing an example of a magnetic sensor device used as a part of an autofocus mechanism and an optical shake correction mechanism of a camera module.

[0035] Fig. 9 Yes means Figure 8 A cross-sectional view of the internal structure of the camera assembly is shown.

[0036] Fig.10 This is a top view of the simulated model when viewed from a direction perpendicular to the surface.

[0037] Fig.11This is a cross-sectional view of the simulated model when viewed along the XY plane that is orthogonal to the surface vertical direction.

[0038] Fig.12 It means in Fig.10 and Fig.11 A graph showing the angular errors simulated for various positions is shown.

[0039] Fig.13 It is a top view showing the first example which is not easily affected by the wiring layer.

[0040] Fig.14 It is a top view showing a second example which is not easily affected by the wiring layer.

[0041] Fig.15 is used with Fig.13 and Fig.14 A plan view showing an example that is easily affected by the wiring layer, shown for comparison.

[0042] Description of Reference Numerals

[0043] 1... magnetic sensor device, 2... supporting substrate, 2A... first surface, 2B... second surface, 2E... electrode, 3... sensor chip, 3A... upper surface, 3E... electrode, 3X... first sensor chip, 3Y... second sensor chip, 3Z... third sensor chip, 4... wiring layer, 4D... dummy pattern, 5... sealing resin, 6... electrode, 6P... through hole, 10... sensor substrate, 20... protective film, 30... magnetic detection element array, 31... first magnetic detection element array, 32... second magnetic detection element array, 33... third detection element array, 34... fourth magnetic detection element array, 40... …through-hole conductor, 40P…through hole, 41…first wiring layer, 42…second wiring layer, 51-53…resin layer, 101…magnetic sensor device of comparative example, 104…wiring layer of comparative example, 200…camera module, 210…image sensor, 220…lens, 230…driving device, 231…first coil, 232…second coil, 233…first magnet, 241…first holding member, 242…second holding member, 243…second magnet, 244…metal wire, 250…housing, 300…magnet, 400…current sensor, 410…bus bar bar), 420…coil, 430…feedback circuit, 440…current detector, A, B…output port, DR…reference direction, E…magnetic detection element, Itg…current, L1…1st layer, L2…2nd layer, MF…magnetic field, MF1…1st magnetic field, MF2…2nd magnetic field, O…center axis, O4…profile of wiring layer, OD…profile of virtual pattern, P…position, Q…distance, S…magnetic field detection value, U, V…direction of shaking, W…wiring, X…left-right direction, Y…front-back direction, Z…direction perpendicular to the surface, θ…angle. DETAILED DESCRIPTION

[0044] The preferred embodiments will be described with reference to the accompanying drawings. In addition, the structures given the same reference numerals in each of the drawings have the same or similar structures. Figure 1 1 is a perspective view showing a magnetic sensor device 1 according to an embodiment. In the example shown in the figure, the magnetic sensor device 1 includes a support substrate 2, a sensor chip 3, a wiring layer 4, a sealing resin 5, an electrode 6, etc. One magnetic sensor device 1 may include a plurality of sensor chips 3.

[0045] like Figure 1As shown in FIG. 1 , the support substrate 2 is formed in a flat plate shape having a first surface 2A and a second surface 2B located on the opposite side of the first surface 2A. In the following description, the thickness direction of the support substrate 2 is referred to as a surface vertical direction Z or an up-down direction Z, the direction from the second surface 2B toward the first surface 2A is referred to as an upward direction, and the direction from the first surface 2A toward the second surface 2B is referred to as a downward direction. The first surface 2A extends parallel to an XY plane orthogonal to the surface vertical direction Z.

[0046] Figure 2 It indicates schematically Figure 1 1 is a cross-sectional view of an example of the internal structure of the magnetic sensor device 1 shown in FIG. In the example shown in the figure, the support substrate 2 is an ASIC (Application Specific Integrated Circuit), and the electrode 2E electrically connected to the wiring layer 4 is provided on the first surface 2A. The support substrate 2 is not limited to ASIC, and may be a silicon substrate or a sapphire substrate. It may also be an interposer substrate (interposer) in which only wiring is formed without an integrated circuit on these substrates.

[0047] The sensor chip 3 is fixed to the first surface 2A of the support substrate 2 by using an adhesive or the like. Figure 2 As shown, the sensor chip 3 includes a sensor substrate 10 , a plurality of magnetic detection element arrays 30 provided on the sensor substrate 10 , a protective film 20 surrounding each magnetic detection element array 30 , and the like.

[0048] The sensor substrate 10 is, for example, a silicon substrate, and is disposed between the first surface 2A of the support substrate 2 and the protective film 20. The structure of the magnetic sensor device 1 is not limited to the example shown in the figure, and may be a monolithic structure in which the sensor substrate 10 is omitted and the support substrate 2 and the magnetic detection element array 30 are integrated by photolithography. The protective film 20 may be an inorganic film having silicon dioxide (SiO2) as a main component, or a laminated film of an inorganic film having silicon dioxide as a main component and an inorganic film having aluminum oxide (Al2O3) as a main component.

[0049] Each magnetic detection element array 30 is composed of a plurality of magnetic detection elements E (eg, Fig.13An example of the magnetic detection element E is a TMR (Tunnel magnetoresistance effect) element. The magnetic detection element E is not limited to a TMR element, but may be a GMR (Giant magnetoresistance effect) element, or an AMR (Anisotropic magnetoresistance effect) element, or a Hall element or other types of magnetic detection elements. Compared with other types of MR elements, the TMR element has a smaller bonding area, which can miniaturize the sensor chip 3, and a larger MR ratio, which can increase the output of the sensor chip 3, and is therefore particularly suitable for the magnetic detection element E.

[0050] The magnetic detection element array 30 is arranged on the first surface 2A side of the support substrate 2 and is formed on the first layer L1 on the first surface 2A side of the support substrate 2. The wiring layer 4 is arranged on the first surface 2A side of the support substrate 2 and is formed on the second layer L2 different from the first layer L1. The dummy pattern 4D (such as Fig.14 As shown in the figure, the wiring layer 4 is also formed in the second layer L2.

[0051] The second layer L2 is not particularly limited as long as it is a layer different from the first layer L1, and may be a plurality of layers. For example, the second layer L2 may be the first resin layer 51 ( Figure 3 The upper surface of the second resin layer 52 ( Figure 3 The second layer L2 is located at a position farther from the support substrate 2 than the first layer L1. The direction from the first layer L1 toward the second layer L2 is consistent with the above-mentioned plane perpendicular direction Z.

[0052] The wiring layer 4 extends parallel to the first surface 2A of the support substrate 2, and electrically connects the electrode 2E of the support substrate 2 and the electrode 3E provided on the upper surface 3A of the sensor chip 3 via a plurality of through-hole conductors 40 extending in the plane-perpendicular direction Z. The wiring layer 4 is arranged so as to partially overlap the sensor substrate 10 in the plane-perpendicular direction Z.

[0053] The sealing resin 5 is disposed on the first surface 2A side of the support substrate 2, and covers the sensor chip 3 and the wiring layer 4. The sealing resin 5 is formed by a plurality of resin layers 51, 52, 53 ( Figure 3 The wiring layer 4 and the dummy pattern 4D ( Fig.14 The electrode 6 is, for example, a solder ball or a copper column, is electrically connected to the wiring layer 4, and is exposed from the sealing resin 5.

[0054] Figure 3 Yes Description Figure 1 The manufacturing process of the magnetic sensor device 1 is shown in FIG. Figure 3 As shown in (A), the sensor chip 3 is fixed to the first surface 2A of the support substrate 2 by an adhesive or the like. Figure 3 As shown in FIG. 2B , a resin layer (first resin layer) 51 is formed to cover the sensor chip 3 and the first surface 2A of the support substrate 2, and a resin layer (first resin layer) 51 is formed on the electrodes 2E and 3E ( Fig.13 and Fig.14 The position of the through-hole conductor 40 (shown) is formed Figure 2 Through hole 40P as shown).

[0055] like Figure 3 As shown in (C), a seed layer is formed by sputtering or the like, and a through-hole conductor 40 and a first wiring layer 41 are formed by electroplating. These processes may be a subtractive method or an additive method. Figure 3 As shown in (D), a resin layer (second resin layer) 52 is formed so as to cover the through-hole conductor 40, the first wiring layer 41, and the resin layer 51, and the through hole 40P for the through-hole conductor 40 is formed.

[0056] like Figure 3 As shown in (E), using Figure 3 (C) The same process is used to form the through-hole conductor 40 and the second wiring layer 42. Figure 3 As shown in (F), a resin layer (third resin layer) 53 is formed to cover the through-hole conductor 40, the second wiring layer 42, and the resin layer 52, and a through hole 6P for the electrode 6 is formed. Figure 3 As shown in (G), the through hole 6P is filled with solder or the like to form the electrode 6. Figure 3 The processes shown in (A) to (G) can electrically connect the support substrate 2 and the sensor chip 3 prepared separately to obtain Figure 1 The magnetic sensor device 1 is shown.

[0057] Figure 4 1 is a diagram showing an example of a magnetic sensor device 1 configured as an angle sensor that generates a detection value corresponding to the angle of a detection object. In the example shown in the figure, the magnetic sensor device 1 is configured as an angle sensor that detects the angle of a magnet 300 that can rotate about the central axis O of a cylinder as a rotation axis. In the example shown in the figure, the X direction, the Y direction, and the Z direction are orthogonal to each other, and the central axis O is parallel to the Z direction.

[0058] The magnetic sensor device 1 detects a first component in a direction parallel to the X direction of the magnetic field component MF which is a magnetic field generated by the magnet 300 and applied to the magnetic sensor device 1, and generates a first detection signal indicating the intensity of the first component, and detects a second component in a direction parallel to the Y direction of the magnetic field generated by the magnet 300, and generates a second detection signal indicating the intensity of the second component. The processor (not shown) calculates an angle θ formed by the magnetic field generated by the magnet 300 with respect to the reference direction DR by calculating the arc tangent of the ratio of the first detection signal to the second detection signal.

[0059] Figure 5 FIG. 1 is a diagram showing an example of a magnetic sensor device 1 configured to generate a detection value corresponding to the angle of the Earth's magnetic field. Figure 5 As shown, the magnetic sensor device 1 includes three sensor chips 3 (first to third sensor chips 3X, 3Y, and 3Z), and the first to third sensor chips 3X, 3Y, and 3Z are configured to detect components of the external magnetic field in three directions orthogonal to each other.

[0060] Figure 6 1 is a diagram showing an example of a magnetic sensor device 1 used as a part of a current sensor 400 that generates a detection value corresponding to a current value of a detection object. In the example shown in the figure, the current sensor 400 is configured to detect the value of a current Itg flowing through a bus bar 410. A magnetic field MF is generated around the bus bar 410 by the current Itg. The current sensor 400 is arranged at a position where the magnetic field MF is applied, and the position is near the bus bar 410.

[0061] Figure 7 Yes means Figure 6 FIG. 1 is a diagram showing a circuit structure of a current sensor 400 shown in FIG. 1 . In the example shown in the figure, the current sensor 400 is configured as a magnetic field balance type current sensor. The current sensor 400 is provided with a coil 420 in addition to the magnetic sensor device 1. The coil 420 is used to generate a second magnetic field MF2 that cancels out the first magnetic field MF1 of the magnetic field MF. The magnetic sensor device 1 detects the residual magnetic field of the first magnetic field MF1 and the second magnetic field MF2, and generates a magnetic field detection value S corresponding to the strength of the magnetic field.

[0062] The current sensor 400 further includes a feedback circuit 430, a current detector 440, and the like. The feedback circuit 430 causes a feedback current for generating a second magnetic field MF2 to flow in the coil 420 based on the magnetic field detection value S. The current detector 440 detects the value of the feedback current flowing in the coil 420. The current detector 440 is, for example, a resistor inserted in a current path of the feedback current. In this case, the potential difference between the two ends of the resistor is equivalent to the detection value of the feedback current. Since the detection value of the feedback current is proportional to the value of the current Itg of the bus bar 410, the value of the current Itg can be detected based on the detection value of the feedback current.

[0063] The magnetic sensor device 1 disclosed in the present invention can be mounted on electronic equipment such as information equipment and used as a magnetic compass for detecting the earth's magnetic field, can also be used as a part of the autofocus mechanism or optical shake correction mechanism of a camera component, can also be used as an angle sensor for detecting the angle formed by the magnetic field generated by a magnet relative to a reference direction, and can also be used as a part of a current sensor for detecting the value of the current flowing through a bus bar.

[0064] Figure 8 1 is a perspective view showing an example of the magnetic sensor device 1 used as a part of the autofocus mechanism and the optical shake correction mechanism of the camera module 200 . Fig. 9 Yes means Figure 8 2 is a cross-sectional view of the internal structure of the camera module 200. The autofocus mechanism and the optical shake correction mechanism of the camera module 200 include a drive device 230 for moving the lens 220, and the drive device 230 is controlled based on the position information of the lens 220 detected by the plurality of magnetic sensor devices 1.

[0065] Specifically, the autofocus mechanism detects the state of focusing on the subject using an image sensor, an autofocus sensor, etc., and moves the lens relative to the image sensor in the Z direction. The optical shake correction mechanism detects shake using a gyro sensor, etc., and moves the lens relative to the image sensor in the U direction and / or V direction.

[0066] Figure 8 The camera assembly 200 shown includes: an image sensor 210 such as a CMOS, a lens 220 aligned with respect to the image sensor 210, a first holding member 241 capable of moving in the U direction and the V direction relative to the image sensor 210, a second holding member 242 capable of moving in the Z direction relative to the first holding member 241, a plurality of elastically deformable metal wires 244 supporting the first holding member 241 and the second holding member 242, a driving device 230 for moving the first holding member 241 and the second holding member 242, and a housing 250 for housing these components.

[0067] The autofocus mechanism and optical shake correction mechanism of the camera assembly 200 are provided with, in addition to the drive device 230 and the plurality of magnetic sensor devices 1, a processor for controlling the drive device 230, an autofocus sensor for detecting the state of focusing on the subject, and a gyro sensor for detecting shake, etc. The processor, autofocus sensor, gyro sensor, etc., which are not shown, are arranged outside the housing.

[0068] The lens 220 is fixed inside the second holding member 242 formed in a cylindrical shape. The second holding member 242 is housed in the first holding member 241 formed in a box shape for each lens 220. At least one second magnet 243 is fixed to the second holding member 242 so that at least one magnetic sensor device 1 detects position information of the second holding member 242.

[0069] The driving device 230 includes a plurality of first coils 231, a plurality of second coils 232, a plurality of first magnets 233, etc. The plurality of first coils 231 are fixed to the housing 250. The plurality of second coils 232 are fixed to the second holding member 242. The plurality of first magnets 233 are fixed to the first holding member 241. Each of the plurality of first coils 231 is opposite to the corresponding first magnet 233. Each of the plurality of second coils 232 is opposite to the corresponding first magnet 233.

[0070] In the case of the automatic focusing mechanism, when a current flows in any second coil 232 according to an instruction from the processor, the second holding member 242 fixed to the second coil 232 moves in the Z direction due to the interaction between the magnetic field generated from the first magnet 233 and the magnetic field generated from the second coil 232. At least one magnetic sensor device 1 generates a detection signal based on a synthetic magnetic field obtained by synthesizing the magnetic field generated from at least one second magnet 243 fixed to the second holding member 242 and the magnetic field generated from the first magnet 233 fixed to the first holding member 241, and sends it to the processor. The processor detects the position information of the lens 220 in the Z direction based on the detection signal, and controls the driving device 230 to focus on the subject.

[0071] In the case of the optical shake correction mechanism, when a current flows through any of the first coils 231 according to an instruction from the processor, the first holding member 241 fixed to the first magnet 233 moves in the U direction and / or the V direction due to the interaction between the magnetic field generated from the first magnet 233 and the magnetic field generated from the first coil 231. Each of the plurality of magnetic sensor devices 1 generates a detection signal based on the position of the corresponding first magnet 233, and transmits it to the processor. The processor detects the position information of the lens 220 in the U direction and the V direction based on the detection signal, and controls the drive device 230 to correct the shake.

[0072] Next, refer to Figure 10 to Figure 15 The magnetic sensor device 1 of the present invention will be described in detail. Fig.10 This is a top view of the simulated model when viewed from the plane vertical direction Z, and the plotted positions P=0 to 14 are shown on the upper surface 3A of the sensor chip 3. Fig.10As shown, the position directly below the center of the square wiring layer 4 of 100 μm in the X-axis direction and the Y-axis direction is set as P=0, and the positions are moved successively by 10 μm in the X-axis direction and the Y-axis direction, and are plotted as P=1, 2, 3, ... 14. For example, P=14 is located at a position 140 μm away from P=0 in the X-axis direction and the Y-axis direction.

[0073] Fig.11 This is a cross-sectional view of the simulated model when viewed along the XY plane orthogonal to the surface vertical direction Z. Fig.12 It means in Fig.10 The position P shown Fig.11 The angle error diagram of each distance Q simulated is shown as the horizontal axis. Fig.10 The position P shown in the figure changes in 15 modes from 0 to 14, with the vertical axis being the vertical axis. Fig.11 The distance Q from the upper surface 3A of the sensor chip 3 to the wiring layer 4 is changed in eight modes of 1 μm, 2 μm, 3 μm, 5 μm, 8 μm, 10 μm, 15 μm, and 20 μm. A predetermined stress value is applied to the magnetic sensor device 1, and simulation results in this case are plotted.

[0074] like Fig.12 As shown, there is a tendency that the angle error becomes the largest as the distance Q from the upper surface 3A of the sensor chip 3 to the wiring layer 4 becomes shorter. At any distance Q, the angle error becomes the largest at position P=5 and position P=6 in the vicinity thereof that overlap with the outline O4 of the wiring layer 4 in the plane perpendicular direction Z. If the magnetic detection element array 30 deviates from these positions, it is less susceptible to the thermal stress from the wiring layer 4.

[0075] Fig.13 and Fig.14 4 is a top view showing an example in which the wiring layer 4 is not easily affected. The magnetic sensor device 1 of the present disclosure includes a first layer L1 ( Figure 2 In the example shown in the figure, the plurality of magnetic detection element arrays 30 include first to fourth magnetic detection element arrays 31, 32, 33, and 34.

[0076] exist Fig.13 and Fig.14 In the example shown, a bridge circuit is formed by two parallel circuits. The first magnetic detection element array 31 and the second magnetic detection element array 32 are connected in series via the output port A to form a parallel circuit of one bridge circuit, and the third magnetic detection element array 33 and the fourth magnetic detection element array 34 are connected in series via the output port B to form another parallel circuit of the bridge circuit. The output ports A and B are connected to the electrode 2E.

[0077] like Fig.13 and Fig.14 As shown, one of the characteristics of the magnetic sensor device 1 disclosed in the present invention is that, in the top view viewed along the surface perpendicular direction Z, at least one of the wiring layer 4 and the virtual pattern 4D includes the entirety of at least one of the multiple magnetic detection element arrays 30, and all of the multiple magnetic detection element arrays 30 (for example, the 1st to 4th magnetic detection element arrays 31, 32, 33, 34) do not overlap with the outline O4 of the wiring layer 4.

[0078] For example, in Fig.13 The first example shown and Fig.14 In the second example shown, in the plane perpendicular direction Z, the wiring layer 4 overlaps with the first magnetic detection element array 31 so as to include the entire first magnetic detection element array 31. Fig.14 In the second example shown, in the plane-perpendicular direction Z, the dummy pattern 4D overlaps the second magnetic detection element array 32 so as to include the entire second magnetic detection element array 32 .

[0079] Here, the phrase “including the entire first magnetic detection element array 31” can be translated as “including all magnetic detection elements E constituting the first magnetic detection element array 31”. Similarly, the phrase “including the entire second magnetic detection element 32” can be translated as “including all magnetic detection elements E constituting the second magnetic detection element array 32”.

[0080] As described above, each of the plurality of magnetic detection element arrays 30 is composed of a plurality of magnetic detection elements E arranged in a matrix. In each magnetic detection element 30, a plurality of magnetic detection elements E are connected in series. In the example shown in the figure, in each magnetic detection element 30, a plurality of magnetic detection elements E are arranged at equal intervals. The magnetic detection element array 30 and the electrode 3E are electrically connected by the wiring W formed in the first layer L1. The magnetic detection element array 30 and other magnetic detection element arrays 30 are also electrically connected by the wiring W.

[0081] As described above, the dummy pattern 4D is formed in the second layer L2 similarly to the wiring layer 4. However, unlike the wiring layer 4, the dummy pattern 4D is not electrically connected to the plurality of magnetic detection element arrays 30. Furthermore, the dummy pattern 4D is not electrically connected to the wiring layer 4 either.

[0082] Fig.15 It is for comparison Fig.13 and Fig.14 A top view of an example of a magnetic sensor device 101 that is easily affected by the wiring layer 4 is shown. Fig.15 In the magnetic sensor device 101 of the comparative example shown in FIG. 1 , the outline O4 of the wiring layer 4 overlaps in a manner that crosses the magnetic detection element array 30 in the plane perpendicular direction Z. Fig.12As shown, the position overlapping with the outline O4 of the wiring layer 4 in the plane perpendicular direction Z is easily affected by the thermal stress of the redistribution wiring 4. In the magnetic sensor device 101 of the comparative example, the output performance of the magnetic detection element array 30 may be deteriorated.

[0083] And in Fig.13 and Fig.14 In the example of the present invention shown in the figure, since the plurality of magnetic detection element arrays 30 do not overlap with the outline O4 of the wiring layer 4 in the plane perpendicular direction Z, they are not easily affected by the thermal stress of the wiring layer 4. Since the thermal stress between the wiring layer 4 and the magnetic detection element 30 caused by temperature changes can be reduced, the output performance of the magnetic detection element 30 of the magnetic sensor device 1 is stable. For example, in the case where the magnetic sensor device 1 is configured as an angle sensor, as shown in FIG. Fig.12 As shown, the angle error can be reduced.

[0084] In addition, Fig.13 and Fig.14 In the example shown, the balance condition of the bridge circuit is not easily changed. As described above, the first magnetic detection element array 31 and the second magnetic detection element array 32 constitute a parallel circuit of the bridge circuit. Fig.13 In the first example shown, the wiring layer 4 is overlapped in the plane perpendicular direction Z so as to include both the first magnetic detection element array 31 and the second magnetic detection element array 32. Similarly, the wiring layer 4 is overlapped in the plane perpendicular direction Z so as to include both the third magnetic detection element array 33 and the fourth magnetic detection element array 34.

[0085] When the resistance ratio of the first magnetic detection element array 31 and the second magnetic detection element array 32 changes, the balance condition of the bridge circuit changes, and the output performance of the magnetic sensor device 1 becomes unstable. Similarly, when the resistance ratio of the third magnetic detection element array 33 and the fourth magnetic detection element array 34 changes, the balance condition of the bridge circuit changes, and the output performance of the magnetic sensor device 1 becomes unstable.

[0086] According to the first example, the first magnetic detection element array 31 and the second magnetic detection element array 32 are not easily affected by the thermal stress of the wiring layer 4, and the balance condition of the bridge circuit is not easily changed. Similarly, the third magnetic detection element array 33 and the fourth magnetic detection element array 34 are not easily affected by the thermal stress of the wiring layer 4, and the balance condition of the bridge circuit is not easily changed. Therefore, the output performance of the magnetic sensor device 1 can be stabilized.

[0087] exist Fig.14In the second example shown, the wiring layer 4 is overlapped in a manner including one of the first magnetic detection element array 31 and the second magnetic detection element array 32 constituting a parallel circuit (the first magnetic detection element array 31 in the example shown in the figure), and the dummy pattern 4D is overlapped in a manner including the other (the second magnetic detection element array 32 in the example shown in the figure). Alternatively, in the plane perpendicular direction Z, the dummy pattern 4D includes the first magnetic detection element array 31, and the wiring layer 4 includes the second magnetic detection element array 32.

[0088] Similarly, the wiring layer 4 is overlapped in a manner so as to include one of the third magnetic detection element array 33 and the fourth magnetic detection element array 34 (the fourth magnetic detection element array 34 in the illustrated example) in the surface perpendicular direction Z, and a dummy pattern 4D is overlapped in a manner so as to include the other (the third magnetic detection element array 33 in the illustrated example).

[0089] According to the second example, similarly to the first example, the first magnetic detection element array 31 and the second magnetic detection element array 32 are not easily affected by the thermal stress of the wiring layer 4 and the dummy pattern 4D, and the balance condition of the bridge circuit is not easily changed. The third magnetic detection element array 33 and the fourth magnetic detection element array 34 are also not easily affected by the thermal stress of the wiring layer 4 and the dummy pattern 4D, and the balance condition of the bridge circuit is not easily changed. Therefore, the output performance of the magnetic sensor device 1 can be stabilized.

[0090] The embodiments described above are described for easy understanding of the present invention and are not intended to limit the interpretation of the present disclosure. The various elements and their configurations, materials, conditions, shapes, and sizes of the embodiments are not limited to the illustrated methods and can be appropriately changed. In addition, the structures described in different embodiments can be partially replaced or combined with each other.

Claims

1. A magnetic sensor device, characterized in that: have: a plurality of magnetic detection element arrays formed on the first layer; and a wiring layer formed in a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays, The plurality of magnetic detection element arrays include a first magnetic detection element array, In a plane perpendicular to the second layer toward the first layer, the wiring layer overlaps the first magnetic detection element array so as to include the entire first magnetic detection element array, and the plurality of magnetic detection element arrays do not overlap with an outline of the wiring layer.

2. The magnetic sensor device according to claim 1, wherein: The plurality of magnetic detection element arrays further includes a second magnetic detection element array, The first magnetic detection element array and the second magnetic detection element array are connected in series via the output port to form a part of a bridge circuit. In the plane-perpendicular direction, the wiring layer overlaps with the second magnetic detection element array so as to include the entire second magnetic detection element array.

3. The magnetic sensor device according to claim 1, wherein: It also includes: a dummy pattern formed on the second layer and not electrically connected to the plurality of magnetic detection element arrays, The plurality of magnetic detection element arrays further includes a second magnetic detection element array, In the plane-perpendicular direction, the dummy pattern overlaps with the second magnetic detection element array so as to include the entire second magnetic detection element array, and the plurality of magnetic detection element arrays do not overlap with the outline of the dummy pattern.

4. The magnetic sensor device according to claim 3, characterized in that: The first magnetic detection element array and the second magnetic detection element array are connected in series via an output port to form a part of a bridge circuit.

5. A magnetic sensor device, characterized in that: include: a plurality of magnetic detection element arrays formed on the first layer; a wiring layer formed in a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays; and a dummy pattern formed in the second layer and not electrically connected to the plurality of magnetic detection element arrays, The plurality of magnetic detection element arrays include a second magnetic detection element array, In a direction perpendicular to the surface from the second layer toward the first layer, the dummy pattern overlaps with the second magnetic detection element array in a manner that includes the entire second magnetic detection element array, and the multiple magnetic detection element arrays do not overlap with the contour of the wiring layer and the contour of the dummy pattern.

6. The magnetic sensor device according to claim 5, characterized in that: The plurality of magnetic detection element arrays further includes a first magnetic detection element array, The first magnetic detection element array and the second magnetic detection element array are connected in series via the output port to form a part of a bridge circuit. In the plane-perpendicular direction, the dummy pattern overlaps with the first magnetic detection element array so as to include the entire first magnetic detection element array.

7. An angle sensor, characterized in that: A magnetic sensor device according to claim 1 or 5.

8. A magnetic compass, characterized in that: A magnetic sensor device according to claim 1 or 5.

9. A current sensor, characterized in that: A magnetic sensor device according to claim 1 or 5.

10. A camera assembly, characterized in that: The invention comprises an autofocus mechanism and / or an optical shake correction mechanism provided with the magnetic sensor device according to claim 1 or 5.

Images