Method and system for correcting optical proximity effect of ion implantation layer layout

Abstract

The invention discloses an optical proximity effect correction method and system for an ion implantation layer layout, and belongs to the technical field of semiconductors, the optical proximity effect correction method for the ion implantation layer layout comprises the following steps: providing a layout ion implantation region to be corrected, correcting a local position of which the key size of the layout ion implantation region is smaller than a required size; respectively growing correction patterns at boundaries on two sides of the local position so as to increase the width of the local position; and step-by-step outward expansion is carried out on each correction graph, the correction graphs are gradually expanded outwards by a preset distance in the preset direction, the distance between the correction graphs and the active area is detected after each step of expansion, and if the distance between the correction graphs and the active area is larger than the safe distance, the correction graphs continue to be expanded. In the OPC correction process, step-by-step expansion is independently carried out on each corrected graph, the size safety of the two-dimensional CD of a layout ion implantation region is ensured, meanwhile, the safe distance between the two-dimensional CD and an active region is kept, the operand is reduced, and the publishing efficiency is improved.

Description

Technical Field

[0001] The invention relates to the field of semiconductor technology, and in particular to an optical proximity effect correction method and system for an ion implantation layer layout. Background Art

[0002] In the OPC (Optical Proximity Correction) program, when correcting the layout area (pattern) with a small two-dimensional CD (critical dimension) of the ion implant area (implant), the method of moving a fixed distance within a fixed range is basically adopted to ensure that the two-dimensional CD of the ion implant area reaches the specified size. However, the above method has a great disadvantage. Since the distance between the ion implant area and the adjacent active area (AA) is different, but the value of the ion implant area boundary movement is fixed, the distance between the edge of the expanded ion implant area and the adjacent active area must be different, so the distance between the edge of the expanded ion implant area and the active area will be too close. When this problem occurs, it must be corrected according to the specific situation, and then tested, and repeated until all patterns that violate the rules are corrected. Although this can get the expected results, the entire program has a large amount of calculations and is time-consuming and labor-intensive.

[0003] It should be noted that the information disclosed in the background technology section of the invention is only intended to deepen the understanding of the general background technology of the invention, and should not be regarded as an admission or suggestion in any form that the information constitutes prior art already known to those skilled in the art. Summary of the invention

[0004] The object of the present invention is to provide a method and system for correcting the optical proximity effect of an ion implantation layer pattern, so as to solve the problem that the correction method is complicated.

[0005] In order to solve the above technical problems, the present invention provides a method for correcting the optical proximity effect of an ion implantation layer layout, providing a layout ion implantation area to be corrected, and correcting a local position of the layout ion implantation area where the critical size is smaller than the required size:

[0006] Growing correction patterns at both side boundaries of the local position respectively to increase the width of the local position;

[0007] Each of the correction patterns is expanded outward in steps: the correction pattern is gradually expanded outward in a predetermined direction by a preset distance, and the distance between the correction pattern and the active area is detected after each step of expansion. If the distance between the correction pattern and the active area is greater than the safety distance, the correction pattern continues to be expanded.

[0008] Preferably, if the distance between the correction pattern and the active area is less than the safety distance, the expansion of the correction pattern is stopped, and the expansion result of the correction pattern in the previous step is retained.

[0009] Preferably, when the critical dimension of the local position is greater than or equal to the required dimension, the expansion of the correction pattern is stopped.

[0010] Preferably, the correction pattern has a first outer side and a second outer side perpendicular to each other on a side away from the local position.

[0011] Preferably, the correction figure is a polygon.

[0012] Preferably, the correction figure is a rectangle.

[0013] Based on the same technical concept, the present disclosure also provides an optical proximity effect correction system for an ion implantation layer pattern, comprising:

[0014] A detection module, used for obtaining a local position where a critical dimension of an ion implantation region of a layout to be corrected is smaller than a required dimension;

[0015] A graphics module, used to grow correction graphics at two side boundaries of the local position respectively to increase the width of the local position;

[0016] The expansion module is used to expand each of the correction patterns outward in steps: the correction pattern is gradually expanded outward by a preset distance along a predetermined direction, and the distance between the correction pattern and the active area is detected after each step of expansion. If the distance between the correction pattern and the active area is greater than the safety distance, the correction pattern continues to be expanded; if the distance between the correction pattern and the active area is less than the safety distance, the correction pattern is stopped from being expanded, and the expansion result of the correction pattern in the previous step is retained.

[0017] Preferably, when the critical dimension of the local position is greater than or equal to a desired dimension, the growth of the correction pattern is stopped.

[0018] Preferably, the correction pattern has a first outer side and a second outer side perpendicular to each other on a side away from the local position.

[0019] Preferably, the correction figure is a polygon.

[0020] The optical proximity effect correction method of the ion implantation layer layout provided by the present invention ensures the size safety of the two-dimensional CD of the ion implantation area of ​​the layout by individually expanding each correction pattern in steps during OPC correction, while maintaining a safe distance from the active area, reducing the amount of calculation and improving publishing efficiency.

[0021] The optical proximity effect correction system for the ion implantation layer pattern provided by the present invention and the optical proximity effect correction method for the ion implantation layer pattern provided by the present invention belong to the same inventive concept. Therefore, the optical proximity effect correction system for the ion implantation layer pattern provided by the present invention at least has all the advantages of the optical proximity effect correction method for the ion implantation layer pattern provided by the present invention, which will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Those skilled in the art will appreciate that the accompanying drawings are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention.

[0023] Figure 1 It is a schematic diagram of a layout that needs to be corrected by OPC in the prior art;

[0024] Figure 2 It is a schematic diagram of performing OPC correction on the ion implantation area of ​​the layout in the prior art;

[0025] Figure 3 It is a schematic diagram of performing OPC correction on the ion implantation area of ​​a layout according to an embodiment of the present invention;

[0026] Figure 4 is a flow chart of an embodiment of the present invention.

[0027] In the attached figure:

[0028] 100, active area; 200, layout ion implantation area; 300, target ion implantation area. DETAILED DESCRIPTION

[0029] In order to make the purpose, advantages and features of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis of each drawing is different, and sometimes different scales are used.

[0030] As used in the present invention, the singular forms "a", "an" and "the" include plural objects, the term "or" is generally used in a sense including "and / or", the term "several" is generally used in a sense including "at least one", and the term "at least two" is generally used in a sense including "two or more". In addition, the terms "first", "second" and "third" are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second", and "third" may explicitly or implicitly include one or at least two of the features. The term "proximal end" is usually the end close to the operator, and the term "distal end" is usually the end close to the patient. "One end" and "the other end" as well as "proximal end" and "distal end" usually refer to two corresponding parts, which include not only the endpoints. The terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral body; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of the two elements or the interaction relationship between the two elements. In addition, as used in the present invention, an element is arranged on another element, which usually only means that there is a connection, coupling, matching or transmission relationship between the two elements, and the connection, coupling, matching or transmission between the two elements can be direct or indirect through an intermediate element, and it cannot be understood as indicating or implying the spatial position relationship between the two elements, that is, one element can be in any position such as inside, outside, above, below or on one side of another element, unless the content clearly indicates otherwise. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0031] The inventors have found that Figure 1 In the layout area shown in FIG. 1 , the position where the two-dimensional CD of the layout ion implantation area 200 is smaller is used for the correction and arrangement of the target ion implantation area 300. Figure 2 As shown, a rectangular correction pattern is arranged at the location with smaller two-dimensional CD for expansion. By expanding along the diagonal direction of the rectangular correction pattern, the problem of smaller two-dimensional CD in the local area of ​​the layout ion implantation area 200 is solved. However, there is a problem that one side is closer to the active area 100 and needs to be corrected separately.

[0032] Based on this, the core idea of ​​the present invention is to ensure the size safety of the two-dimensional CD of the ion implantation area of ​​the layout by expanding each corrected graphic step by step during OPC correction, while maintaining a safe distance from the active area, reducing the amount of calculation and improving publishing efficiency.

[0033] For details, please refer to Figure 3-Figure 4 , which is a schematic diagram of an embodiment of the present invention. Figure 4 As shown, a method for correcting the optical proximity effect of an ion implantation layer layout is provided, providing a layout ion implantation area 200 to be corrected, and correcting a local position of the layout ion implantation area 200 where the critical dimension is smaller than the required dimension:

[0034] S1, growing correction patterns at both side boundaries of the local position respectively to increase the width of the local position;

[0035] S2, each of the correction patterns is expanded outward in steps: the correction pattern is gradually expanded outward in a predetermined direction by a preset distance, and the distance between the correction pattern and the active area 100 is detected after each step of expansion. If the distance between the correction pattern and the active area 100 is greater than the safety distance, the correction pattern continues to be expanded.

[0036] like Figure 3 As described, when the OPC correction is performed on the original layout ion implantation area 200 to form the required target ion implantation area 300, at a local position of the layout ion implantation area 200 with a smaller critical size, a correction pattern is grown on both sides of the local position to form the required target ion implantation area 300. The correction patterns on both sides of the local position grow in opposite directions to increase the width of the place. The boundary of each correction pattern grows, and the expansion continues when the distance between the correction pattern and the active area 100 is greater than the safety distance. In this way, the area of ​​the expanded correction pattern can expand the size of the target ion implantation area to the required safety size in one step, while maintaining a certain distance from the active area 100, thereby reducing the program budget and improving publishing efficiency.

[0037] It is understandable that if the distance between the correction pattern and the active area 100 is less than the safety distance, the correction pattern is stopped from expanding and the expansion result of the correction pattern in the previous step is retained. When the critical dimension of the local position is greater than or equal to the required dimension, the correction pattern is stopped from expanding.

[0038] like Figure 3 As shown, the correction pattern gradually expands outward by a preset distance, which can control the parallelism of any side of the correction pattern before and after expansion, so as to better control the expansion range of the correction pattern. The number of times each correction pattern is gradually expanded and the size of each expansion step are determined according to the size rule of the layer itself and its relationship with the active area 100.

[0039] In one embodiment, the correction pattern has at least two outer sides on the side away from the local position, and has a first outer side and a second outer side perpendicular to each other on the side away from the local position. In one embodiment, the correction pattern is a polygon.

[0040] Preferably, the correction pattern is a rectangle. A rectangular correction pattern is formed in the illustrated area, and the correction pattern grows outward in two diagonal directions, such as Figure 3 In the diagonal direction that is at an angle of 45 degrees to both the X-axis and the Y-axis, when the side extending outward in the diagonal direction is too close to the active area 100, this side will stop expanding, and the side in the opposite direction on the other side will continue to expand without restriction. In this way, the size of the required ion implantation layer can be expanded to a safe size in one step, while maintaining a certain safe distance from the active area 100. This method can reduce the amount of program calculations and improve publishing efficiency.

[0041] Based on the same technical concept, the present disclosure also provides an optical proximity effect correction system for an ion implantation layer pattern, comprising:

[0042] A detection module, used for obtaining a local position where a critical dimension of an ion implantation region of a layout to be corrected is smaller than a required dimension;

[0043] A graphics module, used to grow correction graphics at two side boundaries of the local position respectively to increase the width of the local position;

[0044] The expansion module is used to expand each of the correction patterns outward in steps: the correction pattern is gradually expanded outward by a preset distance along a predetermined direction, and the distance between the correction pattern and the active area is detected after each step of expansion. If the distance between the correction pattern and the active area is greater than the safety distance, the correction pattern continues to be expanded; if the distance between the correction pattern and the active area is less than the safety distance, the correction pattern is stopped from being expanded, and the expansion result of the correction pattern in the previous step is retained.

[0045] like Figure 3 As described, when the OPC correction is performed on the original layout ion implantation area 200 to form the required target ion implantation area 300, at a local position of the layout ion implantation area 200 with a smaller critical size, a correction pattern is grown on both sides of the local position to form the required target ion implantation area 300. The correction patterns on both sides of the local position grow in opposite directions to increase the width of the place. The boundary of each correction pattern grows, and the expansion continues when the distance between the correction pattern and the active area 100 is greater than the safety distance. In this way, the area of ​​the expanded correction pattern can expand the size of the target ion implantation area to the required safety size in one step, while maintaining a certain distance from the active area 100, thereby reducing the program budget and improving publishing efficiency.

[0046] It is understandable that if the distance between the correction pattern and the active area 100 is less than the safety distance, the correction pattern is stopped from expanding and the expansion result of the correction pattern in the previous step is retained. When the critical dimension of the local position is greater than or equal to the required dimension, the correction pattern is stopped from expanding.

[0047] like Figure 3 As shown, the correction pattern gradually expands outward by a preset distance, which can control the parallelism of any side of the correction pattern before and after expansion, so as to better control the expansion range of the correction pattern. The number of times each correction pattern is gradually expanded and the size of each expansion step are determined according to the size rule of the layer itself and its relationship with the active area 100.

[0048] In one embodiment, the correction pattern has at least two outer sides on the side away from the local position, and has a first outer side and a second outer side perpendicular to each other on the side away from the local position. In one embodiment, the correction pattern is a polygon.

[0049] Preferably, the correction pattern is a rectangle. A rectangular correction pattern is formed in the illustrated area, and the correction pattern grows outward in two diagonal directions, such as Figure 3 In the diagonal direction that is at an angle of 45 degrees to both the X-axis and the Y-axis, when the side extending outward in the diagonal direction is too close to the active area 100, this side will stop expanding, and the other side in the opposite direction will continue to expand without restriction. In this way, the size of the required ion implantation layer can be expanded to a safe size in one step, while maintaining a certain safe distance from the active area 100. This method can reduce the amount of program calculations and improve publishing efficiency.

[0050] The above description is only a description of the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any changes or modifications made by a person skilled in the art in the field of the present invention based on the above disclosure shall fall within the scope of protection of the technical solution of the present invention.

Claims

1. A method for correcting the optical proximity effect of an ion implantation layer pattern, characterized in that: Providing a layout ion implantation area to be corrected, and correcting a local position of the layout ion implantation area where a critical dimension is smaller than a required dimension: Growing correction patterns at both side boundaries of the local position respectively to increase the width of the local position; Each of the correction patterns is expanded outward in steps: the correction pattern is gradually expanded outward in a predetermined direction by a preset distance, and the distance between the correction pattern and the active area is detected after each step of expansion. If the distance between the correction pattern and the active area is greater than the safety distance, the correction pattern continues to be expanded.

2. The method for correcting the optical proximity effect of the ion implantation layer pattern according to claim 1, characterized in that: If the distance between the correction pattern and the active area is less than the safety distance, the expansion of the correction pattern is stopped, and the expansion result of the correction pattern in the previous step is retained.

3. The method for correcting the optical proximity effect of the ion implantation layer pattern according to claim 1, characterized in that: When the critical size of the local position is greater than or equal to the required size, the expansion of the correction pattern is stopped.

4. The method for correcting the optical proximity effect of the ion implantation layer pattern according to claim 1, characterized in that: The correction pattern has a first outer side and a second outer side that are perpendicular to each other on a side away from the local position.

5. The method for correcting the optical proximity effect of the ion implantation layer pattern according to claim 1, characterized in that: The correction figure is a polygon.

6. The method for correcting the optical proximity effect of the ion implantation layer pattern according to claim 1, characterized in that: The correction figure is a rectangle.

7. An optical proximity effect correction system for an ion implantation layer pattern, characterized in that: include: A detection module, used for obtaining a local position where a critical dimension of an ion implantation region of a layout to be corrected is smaller than a required dimension; A graphics module, used to grow correction graphics at two side boundaries of the local position respectively to increase the width of the local position; The expansion module is used to expand each of the correction patterns outward in steps: the correction pattern is gradually expanded outward by a preset distance along a predetermined direction, and the distance between the correction pattern and the active area is detected after each step of expansion. If the distance between the correction pattern and the active area is greater than the safety distance, the correction pattern continues to be expanded; if the distance between the correction pattern and the active area is less than the safety distance, the correction pattern is stopped from being expanded, and the expansion result of the correction pattern in the previous step is retained.

8. The optical proximity effect correction system for ion implantation layer layout according to claim 7, characterized in that: When the critical dimension of the local position is greater than or equal to the required dimension, the growth of the correction pattern is stopped.

9. The optical proximity effect correction system for ion implantation layer layout according to claim 7, characterized in that: The correction pattern has a first outer side and a second outer side that are perpendicular to each other on a side away from the local position.

10. The optical proximity effect correction system for ion implantation layer layout according to claim 7, characterized in that: The correction figure is a polygon.

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