Coil device and manufacturing method thereof

Abstract

Provided is a coil device in which the thickness of a conductor pattern can be increased while minimizing a reject ratio. The coil device includes: a base material; the seed crystal pattern is formed on the base material and comprises a seed crystal area and an inlet wire area; a first conductive pattern formed on the seed region; a second conductive pattern formed on at least a portion of the first conductive pattern; and a protective layer formed so as to be in contact with at least one of the substrate, the seed pattern, the first conductive pattern, and the second conductive pattern. Wherein the seed crystal pattern in the wire inlet and guide area extends to the cutting wire.

Description

[0001] This application is a divisional application based on the Chinese patent application with application number 201980039146.8 (international application number PCT / KR2019 / 007944), application date July 1, 2019, and invention name “Coil device and manufacturing method thereof”. Technical Field

[0002] The invention relates to a coil device and a manufacturing method thereof. Background Art

[0003] Coil devices for inducing or promoting electromagnetic force are widely used in various fields such as vibration motors, antennas, generators, filters, inductors, disks, camera modules, etc. Among them, coil devices in the field of camera modules can be used in actuators that mechanically adjust the position or angle of image sensors or lens optical systems in the optical image stabilizer (OIS) method. In addition, as the camera modules mounted on small mobile devices are reduced to a size of less than tens of mm, the actuators installed in the camera modules are also miniaturized. Summary of the invention

[0004] Problems to be solved by the invention

[0005] At the same time, in order to achieve miniaturization of coil devices, thin film type coil devices are mainly used in which a conductor pattern is formed in a spiral shape on the side surface of a substrate. Recently, in order to achieve a fine pitch of the conductor pattern formed on the side surface of the substrate while ensuring the electromagnetic force that can drive the actuator, a technology for increasing the thickness of the conductor pattern has been developed.

[0006] However, when the electroplating time is extended to increase the thickness in the electroplating process of the conductor pattern, the pattern shape cannot be stably maintained, and the upper part of the conductor pattern may be over-plated due to electroplating deviation, which may cause circuit problems such as short circuits due to the inability to maintain fine pattern spacing. In addition, since the incoming wire is plated together with the conductor pattern and becomes thicker, the processability in the process of removing the incoming wire is reduced. In addition, the conductor pattern and / or the incoming wire may have an uneven surface due to burrs, or the appearance may be damaged due to the continuous impact force.

[0007] The problem to be solved by the present invention is to provide a coil device that can increase the thickness of a conductor pattern while minimizing the defect rate.

[0008] Another problem to be solved by the present invention is to provide a method for manufacturing a coil device that can increase the thickness of a conductor pattern while minimizing the defect rate.

[0009] The subject of the present invention is not limited to the subject mentioned in the above content, and the relevant person skilled in the art will further clearly understand other subjects not mentioned through the following description.

[0010] Solutions for solving problems

[0011] In order to achieve the above-mentioned problems, one aspect of the coil device of the present invention includes: a substrate; a seed pattern formed on the above-mentioned substrate, including a seed area and an inlet conductor area; a first conductive pattern formed on the above-mentioned seed area; a second conductive pattern formed on at least a portion of the above-mentioned first conductive pattern; and a protective layer formed in a manner of contacting at least one of the above-mentioned substrate, seed pattern, first conductive pattern and second conductive pattern; wherein the seed pattern in the above-mentioned inlet conductor area extends to the cutting line.

[0012] The seed pattern may be formed with a thickness of 0.1 μm to 5 μm.

[0013] In addition, the ratio of the thickness h1 to the width a of the first conductive pattern may be 1:1 to 5:1. The width b of the second conductive pattern may be 1 to 50 times the interval s between adjacent second conductive patterns. The thickness h2 of the second conductive pattern may be 1.01 to 50 times the interval s between adjacent second conductive patterns.

[0014] Furthermore, the first or second conductive pattern may include an nth pattern formed along the nth side or formed in a manner surrounded by a corner region connecting the nth side and the n-1th side.

[0015] In addition, the above-mentioned protective layer may include: a first protective layer formed in the feeder wire area; and a second protective layer formed in the feeder wire area or the seed area in a manner that contacts at least one of the above-mentioned substrate, seed pattern, first conductive pattern, second conductive pattern and first protective layer.

[0016] The first protective layer may be arranged outside an outermost pattern among the first conductive patterns.

[0017] Meanwhile, the electronic device may include the coil device as described above.

[0018] In order to achieve another problem as described above, one aspect of the manufacturing method of the coil device of the present invention may include: providing a substrate having a seed layer formed thereon; forming a first conductive pattern and a protective layer on the seed layer; removing the seed layer exposed by the first conductive pattern and the protective layer to form a seed pattern; and forming a second conductive pattern on at least a portion of the first conductive pattern.

[0019] Among them, when forming the above-mentioned first conductive pattern and the above-mentioned protective layer, a first conductive pattern including multiple partial patterns and a dummy pattern can be formed on the above-mentioned seed layer, and the above-mentioned multiple partial patterns can include a first partial pattern configured at the outermost side of the above-mentioned multiple partial patterns and a second partial pattern configured at the inner side of the above-mentioned first partial pattern, and the above-mentioned dummy pattern can be configured at the outer side of the above-mentioned first partial pattern. After forming the above-mentioned first conductive pattern, it can also include: forming the above-mentioned protective layer between the above-mentioned first partial pattern and the above-mentioned dummy pattern.

[0020] After forming the seed pattern, the method may further include: removing the protective layer.

[0021] In addition, the seed pattern may be exposed in at least a portion of a corner region of the substrate. When forming the second conductive pattern, the second conductive pattern may be formed by electroplating by loading at least one of a current and a voltage through the seed pattern exposed in the corner region.

[0022] In addition, after forming the second conductive pattern, the method may further include forming a protective layer in contact with at least one of the substrate, the seed pattern, the first conductive pattern, and the second conductive pattern.

[0023] In addition, after forming the second conductive pattern, the method may further include: cutting the first partial pattern, the protective layer, the seed pattern, and the substrate.

[0024] Details of other embodiments are included in the detailed description and drawings.

[0025] Effects of the Invention

[0026] By means of the present invention, the defect rate of the coil device can be minimized and the thickness of the conductive pattern in the coil device can be increased. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a plan view of a coil device according to some embodiments of the present invention.

[0028] Figure 2 is along Figure 1 Cross-sectional view of the AB cut.

[0029] Figure 3 It is a plan view of a coil device according to some embodiments of the present invention.

[0030] Figure 4a as well as Figure 4b is along Figure 3 Cross-sectional view of the AB cut.

[0031] Figure 5 It is used for Figure 1 FIG4 is a plan view for explaining the substrate.

[0032] Figure 6a as well as Figure 6b It is used for Figure 1 FIG4 is a plan view for explaining the seed pattern.

[0033] Figure 7 This is a sequence diagram for explaining a method for manufacturing a coil device according to some embodiments of the present invention.

[0034] Figure 8 , Fig.10 , Fig.12 , Fig.14 as well as Fig.16 It is used for Figure 7 A floor plan illustrating the various steps.

[0035] Fig. 9 , Fig.11 , Fig.13 as well as Fig.15 It is used for Figure 7 The various steps are explained in cross-sectional views. DETAILED DESCRIPTION

[0036] Next, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention and methods for achieving them will be further clarified by the subsequent embodiments described in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed in the following content, but can be implemented in a variety of different forms. The following embodiments are only intended to more completely disclose the present invention and to more completely introduce the scope of the present invention to persons with general knowledge of the technical field to which the present invention belongs. The present invention should only be defined by the scope of the claims. Throughout the specification, the same reference symbols represent the same constituent elements.

[0037] When an element or layer is described as being "on" or "over" another element or layer, it includes not only the case where it is directly on the other element or layer, but also the case where there are other layers or other elements in between. On the contrary, when an element is described as being "directly on" or "directly above", it means that there are no other elements or layers in between.

[0038] In order to clearly describe the relationship between one element or constituent element and other elements or constituent elements, spatially relative terms such as "below", "beneath", "lower", "above", "upper", etc. may be used. Spatially relative terms should be understood as terms that include different directions of elements when in use or operation, in addition to the directions illustrated in the drawings. For example, when the elements illustrated in the drawings are flipped, elements recorded as being "below" or "beneath" other elements may be "above" other elements. Therefore, the exemplary term "below" may include both the lower and upper directions. Elements may also be configured in different directions, so spatially relative terms may be interpreted according to their configuration direction.

[0039] Although the terms such as 1st, 2nd, etc. may be used to describe different elements, constituent elements and / or parts, the above elements, constituent elements and / or parts are not limited by the terms used. The above terms are only used to distinguish one element, constituent element or part from other elements, constituent elements or parts. Therefore, the first element, the first constituent element or the first part mentioned in the following content may also be the second element, the second constituent element or the second part within the technical concept of the present invention.

[0040] The terms used in this specification are only used to illustrate the embodiments and are not intended to limit the present invention. In this specification, unless otherwise explicitly mentioned, singular statements also include plural meanings. As used in this specification, "comprises" and / or "comprising" do not exclude the possibility that one or more other constituent elements, steps, actions and / or elements other than the mentioned constituent elements, steps, actions and / or elements exist or are added.

[0041] Unless otherwise defined, all terms (including technical and scientific terms) used in this specification have the same meaning as those commonly understood by persons having general knowledge of the technical field to which the present invention belongs. In addition, unless otherwise clearly defined, commonly used terms defined in dictionaries should not be interpreted in an overly idealized or exaggerated manner.

[0042] Next, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the process of describing with reference to the accompanying drawings, regardless of the figure numbers, the same reference numbers are assigned to the same or corresponding components and the detailed description thereof is omitted.

[0043] Figure 1 It is a plan view of a coil device according to some embodiments of the present invention. Figure 2 is along Figure 1 A cross-sectional view of the AB cut. Figure 3 It is a plan view of a coil device according to some embodiments of the present invention. Figure 4a as well as Figure 4b is along Figure 3 Cross-sectional view of the AB cut. Figure 5 It is used for Figure 1 FIG. 6 is a plan view for explaining the substrate of FIG. Figure 1 FIG4 is a plan view for explaining the seed pattern.

[0044] First, see Figure 1 as well as Figure 2 The coil device 100 of the present invention includes a substrate 10 , a seed pattern 20 , a first conductive pattern 30 , a protective layer 50 , a second conductive pattern 50 , and the like.

[0045] The substrate 10 may be a flexible substrate or a rigid substrate. For example, the substrate 10 may be made of materials such as polyimide, polyethylene terephthalate (PET), polyethylene naphthalate, polycarbonate, epoxy resin, glass fiber, etc., but is not limited thereto. Next, the case where the substrate 10 is a polyimide film is described as an example.

[0046] Furthermore, any shape that can realize a coil device can be used as the substrate 10. Figure 5 As shown, the substrate 10 may include four edges 11, 12, 13, and 14 and four corner areas 11a, 12a, 13a, and 14a connecting the four edges 11, 12, 13, and 14. The corner areas 11a, 12a, 13a, and 14a may be in the shape of rounded chamfers, and an opening 15 may be formed on the inner side of the substrate 10.

[0047] The seed pattern 20 is formed on the substrate 10. Figure 2The situation formed on both sides of the substrate 10 is illustrated in the figure, but it is not limited to this. The seed pattern 20 can be a conductive metal such as Ni, Cr, Cu, or a patterned thin film including the above conductive metal. The seed pattern 20 can be formed with a thickness of 0.1μm to 5μm, preferably 0.5μm to 1.5μm. By forming the seed pattern 20 with the thickness as described above, sufficient current required to form the first conductive pattern 30 and / or the second conductive pattern 50 described later can be loaded, and defects that occur when performing processing such as cutting can also be suppressed.

[0048] In addition, the seed pattern 20 includes a seed region 20b and an inlet conductor region 20a. The seed region 20b is a region that serves as a basis when forming the first conductive pattern 30 and / or the second conductive pattern 50 (i.e., a region that serves as a seed), and the inlet conductor region 20a is a region that serves as a conductor for receiving a loaded current when forming the first conductive pattern 30 and / or the second conductive pattern 50.

[0049] The first conductive pattern 30 is formed on the seed region 20b. Figure 1 Although not clearly shown in the figure, the first conductive pattern 30 may be in a spiral shape, but is not limited thereto. Any shape that can generate sufficient driving electromagnetic force for the actuator may be used. In addition, a single or multiple first conductive patterns 30 may be formed, and are not limited to such shapes. Figure 6a as well as Figure 6b Shape shown.

[0050] As an example, the nth pattern (n=a natural number greater than or equal to 2) may be formed long along n sides formed on the substrate 10. That is, when the substrate 10 includes four sides 11, 12, 13, 14 and four corner regions 11a, 12a, 13a, 14a, the first conductive pattern 30 may include first to fourth patterns formed long along the four sides 11, 12, 13, 14, respectively. Figure 6a , the first pattern can be formed on the seed region 20b that is arranged long in the corner regions 11a and 14a along the first side 11 (i.e., the corner regions 11a and 14a arranged in the upper left and upper right in FIG. 6 ). Similarly, the second pattern can be formed on the seed region 20b that is arranged long in the corner regions 11a and 12a along the second side 12 (i.e., the corner regions 11a and 12a arranged in the upper left and lower left in FIG. 6 ). Similarly, the third pattern can be formed long along the third side 13, and the fourth pattern can be formed long along the fourth side 14.

[0051] As another example, the n-th pattern may be formed in a manner surrounded by a corner region formed by the n-th side and the n-1-th side (n=a natural number greater than or equal to 2) of the substrate 10. Figure 6b , the first pattern can be formed with a contour similar to the shape of the corner region 11a formed by the first side and the second side. Similarly, the second pattern can be formed with a contour similar to the shape of the corner region 12a formed by the second side and the third side, and the third and fourth patterns can also be formed on the corner regions 13a and 14a, respectively.

[0052] Alternatively, although not shown, a single or a plurality of first conductive patterns 30 and / or second conductive patterns 50 may be formed on a substrate having a circular or elliptical shape with a certain curvature.

[0053] In addition, the first conductive pattern 30 includes a plurality of partial patterns 30a and 30b. Figure 2 As shown, reference numeral 30a represents a first partial pattern disposed on the outermost side, and reference numeral 30b represents a second partial pattern disposed on the inner side of the first partial pattern.

[0054] The ratio of the thickness h1 to the width a of the first conductive pattern 30 may be 1:1 to 10:1. Specifically, the ratio of the inner first conductive pattern 30b excluding the outermost first partial pattern 30a may be 3:1 to 5:1. The outermost first partial pattern 30a represents the first partial pattern 30a that is closest to the cutting line CL of the substrate 10. The inner first conductive pattern 30b represents a pattern disposed inside the outermost first partial pattern 30a. The ratio described above corresponds to an optimal ratio in which the second conductive pattern 50 can be formed with a contour similar to that of the first conductive pattern 30 while minimizing the spacing between the second conductive pattern 50 and the adjacent second conductive pattern 50.

[0055] The protective layer 40 is made of a material different from the first conductive pattern 30, for example, it can be a photosensitive resin, a solder resist, etc. as an insulating material. In addition, the protective layer 40 includes: a first protective layer 40a for protecting the seed pattern 20, specifically, the seed pattern 20a in the incoming wire area; and a second protective layer 40b, which is formed in the incoming wire area or the seed area in a manner of contacting with at least one of the substrate 10, the seed pattern 20, the first conductive pattern 30, the first protective layer 40a, and the second conductive pattern 50 described later, and provides protection.

[0056] The first protective layer 40a is as follows Figure 4a As shown, the first protective layer 40a covers at least a portion of the sidewall of the first conductive pattern 30. In addition, the first protective layer 40a can be arranged on the outermost pattern (eg Figure 4aThe outer side of the rightmost second partial pattern 30a) may have a height equal to or higher than the second partial pattern 30a.

[0057] Or, if Figure 4b As shown, the height of the first protective layer 40a may also be lower than that of the second partial pattern 30a. In the above case, the side wall of the second partial pattern 30a (close to the side wall of the first protective layer 40a) may be exposed and the second conductive pattern 50 may be formed on the side wall of the second partial pattern 30a close to the first protective layer 40a.

[0058] In addition, in accordance with Figure 3 When the first conductive pattern 30 is formed in the manner shown, the first protective layer 40a can be formed outside the first to fourth patterns on the corner regions 11a, 12a, 13a, and 14a. Thus, the first protective layer 40a can be formed on the upper left, upper right, lower left, and lower right corner regions 11a, 12a, 13a, and 14a of the substrate 10 in FIG.

[0059] As described later, after the first conductive pattern 30 is formed, the seed layer exposed between the first conductive patterns 30 is removed to achieve insulation between the first conductive patterns 30, thereby forming the seed pattern 20. However, in the coil device 100 applicable to some embodiments of the present invention, the first protective layer 40a is formed on a portion of the seed layer (i.e., corresponding to the incoming wire area 20a) without removing the seed layer below the first protective layer 40a. The seed layer that is not removed will be used as an incoming wire (or incoming wire board) when forming the second conductive pattern 50. In addition, with the help of the first protective layer 40a, the incoming wire carrying current will not be electroplated together when the second conductive pattern 50 is formed, thereby avoiding an increase in the thickness of the incoming wire and maintaining a certain thickness.

[0060] In addition, the first protective layer 40a can be selectively removed after forming the second conductive pattern 50. Even when the first protective layer 40a is removed, the seed pattern 20b in the incoming conductor area can be protected by the second protective layer 40b, and since the protective layer 40 can be formed on the final product without distinguishing between layers, its durability can be improved and surface unevenness can be minimized.

[0061] The second conductive pattern 50 is formed on at least a portion of the sidewall of the first conductive pattern 30 exposed by the first protective layer 40a and the upper side surface of the first conductive pattern 30. In addition, the second conductive pattern 50 can also be formed on at least a portion of the sidewall of the seed pattern 20 or the upper side surface of the first protective layer 40a. As shown in the figure, the second conductive pattern 50 can be formed along the sidewall of the seed pattern 20, the sidewall and the upper side surface of the first conductive pattern 30. The second conductive pattern 50 can be formed by electroplating by applying at least one of a current and a voltage to the seed pattern 20 formed on at least a portion of the corner region of the substrate 10.

[0062] As shown in the figure, the formation area of ​​the second conductive pattern 50 can be larger than the area of ​​the first conductive pattern 30. At this time, the area of ​​the second conductive pattern 50 is a concept that includes the area of ​​the first conductive pattern 30. In addition, the width b of the second conductive pattern can be 1 to 50 times the spacing s between adjacent second conductive patterns 50, and preferably 5 to 15 times. In addition, the thickness h2 of the second conductive pattern can be 1.01 to 50 times the spacing s between adjacent second conductive patterns 50, and preferably 5 to 20 times. That is, the coil device applicable to several embodiments of the present invention can have an increased width and thickness of the conductive pattern compared to the prior art. In addition, miniaturization can be achieved by reducing the spacing between the conductive patterns. Thereby, a higher electromagnetic force can be achieved while achieving miniaturization and high integration. In addition, the reason for using the interval s as a reference when describing the width b range and the thickness h2 range of the second conductive pattern 50 is that the interval s is a condition that must be considered as important as the width b or the thickness h2 in preventing short circuits between adjacent second conductive patterns 50 or increasing the number of turns of the coil without hindering the formation of a magnetic field.

[0063] The protective layer 40 and the seed pattern 20 extend to the scribe line CL. That is, the protective layer 40 and the seed pattern 20 may be exposed on the surface where the scribe line CL is formed.

[0064] In other words, the cutting line CL of the protective layer 40 and the cutting line CL of the seed pattern 20 are connected to each other. Similarly, the cutting line CL of the seed pattern 20 and the cutting line CL of the substrate 10 are connected to each other. As described later, because the protective layer 40, the seed pattern 20 and the substrate 10 are cut simultaneously through the cutting process, the cutting lines CL can be connected to each other. Among them, the cutting line CL can be equivalent to the outer peripheral surface of the coil device (final product). However, multiple or different types of cutting processes can be used instead of a single cutting process according to the design. In the case as described above, the cutting lines CL of the protective layer 40, the seed pattern 20 and the substrate 10 may also not be connected to each other.

[0065] In addition, as described above, the seed pattern 20 formed at the lower part of the protective layer 40 by forming the outer side of the first partial pattern 30a at the outermost side of the protective layer 40 is also extended to the cutting line CL. That is, the thickness of the conductive material cut by the cutting process is equivalent to the thickness of the seed pattern 20. Compared with the existing coil device, the thickness of the conductive material that needs to be cut by the cutting process can be significantly reduced. In this way, not only can the processing be easily performed, but also the problems such as burrs (Burr) or poor circuit contact formed on the cut section can be solved. In addition, when the protective layer 40 is preferably the first protective layer 40a formed on the inner side of the outermost first partial pattern 30a, the seed pattern 20 formed at the lower part may cause circuit problems such as short circuit. Therefore, in some embodiments applicable to the present invention, the protective layer 40 is formed on the outer side of the outermost first partial pattern 30a.

[0066] In addition, the shape of the protection layer 40 may be the same as that of the first conductive pattern 30 , or may be formed in a different shape by a process such as forming the upper side surface with a curved shape, and therefore is not limited to the shape shown in the figure.

[0067] In summary, the protective layer 40 can be partially formed in a single or multiple regions of at least one side of the substrate 10. That is, by forming the seed pattern 20 at the bottom of the partially formed protective layer 40, the insulation between the pre-formed first conductive pattern 30 can be ensured while forming the second conductive pattern 50. Specifically, by forming the protective layer 40 in a manner that the cutting line CL of the protective layer 40 is connected to the cutting line CL of the substrate 10, the seed pattern 20 can be extended to the cutting line CL and receive the loading of external current. More specifically, by forming the protective layer 40 in a thin film form in the corner area of ​​the substrate 10 where the spiral-shaped first conductive pattern 30 is not formed, compared with the existing bar-shaped feeder conductor formed separately, the seed pattern 20 in the feeder conductor area where the area in contact with the cutting line CL is increased and the thickness is thinned can be more effectively loaded with current to the first conductive pattern 30.

[0068] The coil device according to some embodiments of the present invention may be applicable to electronic devices, which may be vibration motors, antennas, generators, filters, inductors, magnetic disks, and camera modules, but are not limited thereto.

[0069] Next, we will refer to Figures 7 to 16 Methods for manufacturing coil devices according to some embodiments of the present invention will be described.

[0070] Figure 7 This is a sequence diagram for explaining a method for manufacturing a coil device according to some embodiments of the present invention. Figure 8 , Fig.10 , Fig.12 , Fig.14 as well as Fig.16 It is used for Figure 7 A floor plan illustrating the various steps. Fig. 9 , Fig.11 , Fig.13 as well as Fig.15 It is used for Figure 7 Next, for the convenience of explanation, the semi-additive plating (SAP, Semi Additive Plating) method will be used as the basis for explanation, but it is not limited to this. Next, for the convenience of explanation, the combination Figure 1 The contents described up to FIG. 6 are omitted.

[0071] See also Figure 8 as well as Fig. 9 , providing a substrate 10 having a seed layer 20c formed thereon (see Figure 7 As shown in the figure, the seed layer can be formed on the substrate 10 by bonding, electroless or electrolytic plating, evaporation, etc. Alternatively, a substrate 10 with a seed layer 20c formed on one side or both sides in advance can also be used.

[0072] Next, a first conductive pattern 30 and a protective layer 40 are formed on the seed layer 20c (see Figure 7 Specifically, if Figure 8 as well as Fig. 9 As shown, a first conductive pattern 30 (see FIG. Figure 7 S221). The seed layer 20c can be used as an inlet conductor to form the first conductive pattern 30 through semi-additive plating (SAP), etching and other processes, but it is not limited to this. In addition, the first conductive pattern 30 can be a spiral shape that can provide magnetic force, or it can be formed in a variety of different shapes as needed. At the same time, when forming the first conductive pattern 30, virtual patterns 90 and 91 can be additionally formed in order to form the pattern more accurately. The virtual pattern 91 can be a quadrilateral shape, and the virtual pattern 90 can be a circular shape. The first conductive pattern 30 can be formed between the virtual pattern 90 and the virtual pattern 91. Although not shown in the figure, in order to achieve the effects of pattern position arrangement, reinforcement, heat dissipation, etc., identification patterns, reinforcement patterns, heat dissipation patterns, etc. can be implemented.

[0073] As an example, the first conductive pattern 30 may include first to fourth patterns, and the first to fourth patterns may be respectively formed long along four sides of the substrate 10 .

[0074] Fig. 9 For the Figure 8The cross-sectional view of the spiral-shaped first conductive pattern 30 cut along the AB direction is illustrated. The first conductive pattern 30 includes a plurality of partial patterns 30a and 30b. The first partial pattern 30a can be arranged at the outermost side of the plurality of partial patterns 30a and 30b, and the second partial pattern can be arranged inside the first partial pattern 30a. In addition, the dummy pattern 91 can be arranged outside the first partial pattern 30a.

[0075] In addition, if Fig.10 as well as Fig.11 As shown, a protective layer, namely, a first protective layer 40a (see FIG. 4 ) is formed in a portion of the region between the first conductive patterns 30. Figure 7 S222 of). Specifically, the first protective layer 40a is arranged on the outside of the first conductive pattern 30. In other words, the first protective layer 40a can be arranged on the outside of the pattern arranged on the outermost side in the first conductive pattern 30. When the dummy pattern 91 is arranged on the outside of the first conductive pattern 30 as described above, it can be formed in the area between the first conductive pattern 30 and the dummy pattern 91. That is, the first protective layer 40a can be formed between the first partial pattern 30a and the dummy pattern 91. In addition, the first protective layer 40a can also be formed on the outside of the dummy pattern 91.

[0076] exist Fig.11 In the figure, the case where the thickness of the first protective layer 40a is greater than the thickness of the first partial pattern 30a is illustrated, but it is not limited to this. The thickness of the first protective layer 40a can be changed according to the design. For example, the thickness of the first protective layer 40a can be less than the thickness of the first conductive pattern 30, so as not to cover the upper side of the first conductive pattern 30.

[0077] Specifically, if Figure 8 As shown in FIG. 1 , the first protective layer 40a may be formed outside the first pattern to the fourth pattern of the first conductive pattern 30 on the corner regions 11a, 12a, 13a, and 14a. That is, the first protective layer 40a may be formed on the outer sides of the first pattern to the fourth pattern of the first conductive pattern 30. Figure 8 The upper left, upper right, lower left and lower right corner areas 11a, 12a, 13a and 14a of the substrate 10.

[0078] The first protective layer 40a can be formed by methods such as screen printing, thin film lamination, and photolithography, but is not limited thereto. For example, the first protective layer 40a can be formed between the first partial pattern 30a and the dummy pattern 91 on the first conductive pattern 30 by photolithography. As another method, the first protective layer (i.e., solder resist) can be applied by printing on a portion of the substrate on which the coil is formed. At this time, the solder resist can be applied only in the corner area by adjusting the viscosity of the solder resist.

[0079] Next, the seed layer 20c exposed by the first conductive pattern 30 and the first protective layer 40a is removed to form a seed pattern 20d (see Figure 7 S230).

[0080] Specifically, if Fig.11 as well as Fig.12 As shown, the seed layer 20c between the first conductive pattern 30 and the dummy pattern 91 will be covered by the first protective layer 40a, and thus will not be removed. On the contrary, since the seed layer 20c between the first partial pattern 30a and the second partial pattern 30b is exposed to the outside, the exposed seed layer 20c will be removed, thereby completing the seed pattern 20d. As a removal method, various methods such as wet etching and dry etching can be applied, and are not limited to a specific method.

[0081] At the same time, after the seed pattern 20 is formed, the first protective layer 40a can be selectively removed, and the method used at this time is not limited to a specific method. Because the materials constituting the seed pattern 20 and the first protective layer 40a are different, the damage to the seed pattern 20 when removing the first protective layer 40a may be relatively small, but methods such as masking can be selectively applied. In addition, the seed pattern 20 can be continuously protected by the second protective layer 40b described later.

[0082] Next, the second conductive pattern 50 is formed on at least a portion of the side wall of the first conductive pattern 30 and the upper side surface of the first conductive pattern 30 (see Figure 7 S240).

[0083] Specifically, if Fig.13 as well as Fig.14 As shown, the second conductive pattern 50 is formed along the side wall of the seed pattern 20d and the side wall / upper side of the first conductive pattern 30. The seed pattern 20d is exposed to the outside at least in a corner region of the substrate 10. When forming the second conductive pattern 50, the second conductive pattern can be formed by electroplating by applying current through the seed pattern 20d exposed in the corner region. That is, the seed pattern 20d exposed in the corner region acts as a current inlet conductor. The thickness and shape of the second conductive pattern 50 can be adjusted by adjusting the electroplating conditions such as electroplating time and current density.

[0084] Next, the second protective layer 40b is formed so as to cover at least one of the substrate 10, the seed pattern 20d, the first conductive pattern 30, the first protective layer 40a, and the second conductive pattern 50. Next, the dicing process is performed to complete the Figure 1 To the coil device shown in FIG. 4 (see Figure 7 S250).

[0085] Specifically, by following the Fig.16 The cutting process is performed on the cutting lines CL and CL2 shown in the figure to remove unnecessary dummy patterns 90 and 91 in the final structure. That is, after forming the second conductive pattern 50, the dummy pattern 91 overflowing the outer side is cut by cutting the first protective layer 40a, the seed pattern 20d, and the substrate 10 arranged between the first partial pattern 30a and the dummy pattern 91. In addition, the inner dummy pattern 90 is removed. The cutting lines CL and CL2 are formed by the cutting process. By the cutting process as described above, as shown in FIG. Figure 1 as well as Figure 2 As shown, the protective layer 40 and the seed pattern 20 extend to the cutting line CL. That is, the protective layer 40 and the seed pattern 20 can be exposed on the surface where the cutting line CL is formed. The cutting line CL of the protective layer 40 and the cutting line CL of the seed pattern 20 are connected to each other, and the cutting line CL of the seed pattern 20 and the cutting line CL of the substrate 10 are connected to each other.

[0086] In the above content, the embodiments of the present invention are described with reference to the accompanying drawings, but a person having general knowledge in the technical field to which the present invention belongs should understand that the present invention can be implemented in other specific forms without changing the technical ideas or essential features of the present invention. Therefore, the embodiments described in the above content are for illustrative purposes only and are not limiting in all aspects.

[0087] Industrial Applicability

[0088] The present invention can be applied to coil devices in various fields such as vibration motors, antennas, generators, filters, inductors, disks, camera modules, etc.

Claims

1. A coil device, characterized in that: include: Base material; A seed pattern is formed on the substrate, including a seed region and an inlet conductor region; a first conductive pattern formed on the seed region; a second conductive pattern formed on at least a portion of the first conductive pattern; and a protective layer formed in contact with at least one of the substrate, the seed pattern, the first conductive pattern, and the second conductive pattern; The seed pattern in the lead-in conductor area is extended to the cutting line. The second conductive pattern covers the upper side surface and the side surface of the seed pattern in the seed region, and the second conductive pattern does not cover the seed pattern in the lead wire region.

2. The coil device according to claim 1, characterized in that: The seed pattern is formed to have a thickness of 0.1 μm to 5 μm.

3. The coil device according to claim 1, characterized in that: The ratio of the thickness (h1) to the width (a) of the first conductive pattern is 1:1 to 5:

1.

4. The coil device according to claim 1, characterized in that: The width (b) of the second conductive pattern is 1 to 50 times the interval (s) between adjacent second conductive patterns.

5. The coil device according to claim 1 or claim 4, characterized in that: The thickness (h2) of the second conductive pattern is 1.01 to 50 times the interval (s) between adjacent second conductive patterns.

6. The coil device according to claim 1, characterized in that: The first or second conductive pattern includes an nth pattern formed along the nth side or formed in a manner surrounded by a corner region connecting the nth side and the n-1th side.

7. The coil device according to claim 1, characterized in that: The above-mentioned protective layer includes: a first protective layer formed in the feeder wire area; and a second protective layer formed in the feeder wire area or the seed area in a manner that contacts at least one of the above-mentioned substrate, seed pattern, first conductive pattern, second conductive pattern and first protective layer.

8. The coil device according to claim 1 or claim 7, characterized in that: The first protective layer is arranged outside the outermost pattern among the first conductive patterns.

9. An electronic device comprising the coil device according to claim 1.

10. A method for manufacturing a coil device, characterized in that: include: providing a substrate having a seed layer formed thereon; forming a first conductive pattern and a protective layer on the seed layer; removing the seed layer exposed by the first conductive pattern and the protective layer, thereby forming a seed pattern; as well as, forming a second conductive pattern on at least a portion of the first conductive pattern, The seed pattern includes a seed region and an inlet conductor region. The second conductive pattern covers the upper side surface and the side surface of the seed pattern in the seed region, and the second conductive pattern does not cover the seed pattern in the lead wire region.

11. The method for manufacturing a coil device according to claim 10, characterized in that: When forming the first conductive pattern and the protective layer, forming a first conductive pattern including a plurality of partial patterns and a dummy pattern on the seed layer, wherein the plurality of partial patterns include a first partial pattern disposed at the outermost side of the plurality of partial patterns and a second partial pattern disposed inside the first partial pattern, and the dummy pattern is disposed outside the first partial pattern, After forming the first conductive pattern, the method further includes: forming the protective layer between the first partial pattern and the dummy pattern.

12. The method for manufacturing a coil device according to claim 10, characterized in that: After forming the seed pattern, the method further includes: removing the protective layer.

13. The method for manufacturing a coil device according to claim 10 or claim 11, characterized in that: The seed pattern is exposed at least partially in a corner region of the substrate. When forming the second conductive pattern, at least one of a current and a voltage is applied to the seed pattern exposed in the corner region to form the second conductive pattern by electroplating.

14. The method for manufacturing a coil device according to claim 10 or claim 13, characterized in that: After forming the second conductive pattern, the method further includes forming a protective layer in contact with at least one of the substrate, the seed pattern, the first conductive pattern, and the second conductive pattern.

15. The method for manufacturing a coil device according to claim 10 or claim 13, characterized in that: After forming the second conductive pattern, the method further includes cutting the first partial pattern, the protective layer, the seed pattern, and the substrate.

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