Semiconductor device with equipotential electrode structure and manufacturing method thereof

Abstract

The embodiment of the present invention discloses a semiconductor device with an equipotential electrode structure and a manufacturing method thereof, which are applied to the field of electronic device technology. The semiconductor device mainly sets an isolation region around the active region of the epitaxial structure, and when setting the electrode of the active region, the source electrodes at the top and bottom of the active region are set as electrodes with equal potential, and the adjacent source electrodes are electrodes with unequal potentials, and at least one circle of metal ring structure and at least one ion implantation region are set in the isolation region, so that the reliability of the source electrode in the active region can be effectively improved through the metal ring structure and the ion implantation region, thereby achieving high reliability of the semiconductor device. Moreover, the potential of the metal ring structure, the potential of the substrate and the source electrode at the top or bottom of the active region are the same or approximately equal, which can reduce electrochemical corrosion, and thus the potential difference inside and outside the metal ring structure can be completely eliminated to obtain high reliability.

Description

Technical Field

[0001] The present invention relates to the field of electronic devices, and in particular to a semiconductor device with an equipotential electrode structure and a manufacturing method thereof. Background Art

[0002] In many semiconductor devices, such as the traditional unidirectional voltage-resistant lateral gallium nitride high electron mobility transistor (GaN High Electron Mobility Transistor, GaN HEMT) devices, there are three electrodes: source, gate, and drain. When the device is turned off, the drain is at a high potential, and the source and gate are at low potentials. In bidirectional voltage-resistant bidirectionally conductive GaN HEMT devices, there is a common drain device structure, that is, the device does not have an actual drain electrode, but has two source electrodes (Source1 and Source2) and two gate electrodes. When the device is in the forward and reverse voltage-resistant states, the two electrodes will take turns as high-voltage electrodes and low-voltage electrodes.

[0003] When manufacturing these semiconductor devices, the devices need to be placed on a substrate for manufacturing. For unidirectional GaN HEMT devices, the substrate is generally short-circuited with the Source, short-circuited with the Gate, or floating. Except for the case where the substrate is floating, the substrate can be considered to be at a low potential. The working state of the bidirectional GaN HEMT device is more complicated, and its substrate cannot simply obtain a stable potential by short-circuiting with a certain electrode. In some applications, the substrate will be connected to the midpoint potential of an alternating current to ensure its stability. For the specific working state of the bidirectional device, the midpoint potential of this alternating current can be considered to be the midpoint potential of the high-voltage electrode and the low-voltage electrode. For high-voltage GaN HEMT devices, the isolation of the high-voltage structure and the low-voltage structure is very important and is a key factor affecting reliability risks.

[0004] When cutting devices on a substrate, the epitaxial structure of the device at the cutting path is usually etched to expose the substrate before cutting. This can reduce the stress and vibration caused by cutting, which may cause mechanical damage to the device edge. However, the etching and cutting process will inevitably cause mechanical damage, which will increase the roughness of the device edge and cause material cracks. These mechanical damages may spread to the active area of ​​the device, providing an invasion channel for water vapor and contamination, and under the combined action of voltage and other conditions, electrochemical corrosion may occur, further deteriorating the structure of the device edge, bringing reliability risks.

[0005] In the active area of ​​unidirectional GaN HEMT devices, the order of Source, Gate and Drain is usually repeated, and the low-potential Source is placed at the edge of the active area, so that each Drain can be sandwiched between two Gates, so that the high-voltage Drain is away from the cutting path, thereby reducing reliability risks. For bidirectional GaN HEMT devices, because each electrode is in a high-voltage state in a certain working state, it is impossible to isolate the high-voltage end from the cutting path like a unidirectional device structure. There will always be a working state with a large potential difference between Source1 and Source2 and the cutting path, and the potential difference will be converted between positive and negative, further increasing reliability risks. Summary of the invention

[0006] The embodiment of the present invention provides a semiconductor device with an equipotential electrode structure and a manufacturing method thereof, thereby achieving high reliability of the semiconductor device.

[0007] An embodiment of the present invention provides a semiconductor device with an equipotential electrode structure, comprising: an epitaxial structure, the epitaxial structure being arranged on a substrate, the epitaxial structure comprising an active region and an isolation region outside the active region, wherein:

[0008] The active area includes a plurality of source electrodes of the semiconductor device and gate electrodes corresponding to the source electrodes, and the source electrode at the uppermost end and the source electrode at the lowermost end of the active area are electrodes with equal potential;

[0009] The active area includes a plurality of groups of electrodes, each group of electrodes includes a source electrode and a gate electrode surrounding the source electrode, and the potentials of the sources included in adjacent electrode groups are unequal potentials;

[0010] The isolation region surrounds the electrode in the active region, and includes at least one circle of ion implantation region and at least one circle of metal ring structure, wherein the metal ring structure and the ion implantation region are arranged in the isolation region at intervals, and the ion implantation region is closest to the electrode in the active region;

[0011] The metal ring structure is connected to the substrate via a through hole on the epitaxial structure, or the metal ring structure is connected to the substrate via an external packaging wire;

[0012] The potential of the metal ring structure, the substrate, and the potential of the source at the uppermost end or the lowermost end of the active region are the same or approximately equal.

[0013] Another aspect of an embodiment of the present invention provides a semiconductor device with an equipotential electrode structure, comprising: an epitaxial structure, the epitaxial structure being disposed on a substrate, the epitaxial structure comprising an active region and an isolation region outside the active region, wherein:

[0014] The active area includes a plurality of source electrodes of the semiconductor device and gate electrodes corresponding to the source electrodes, and the source electrode at the uppermost end and the source electrode at the lowermost end of the active area are electrodes with equal potential;

[0015] Each electrode in the active area is a strip electrode, and two gates are arranged between two adjacent first source electrodes and second source electrodes in the active area. When the semiconductor device is turned on, the two gates are turned on; when the semiconductor device is turned off, when the first source electrode is at a high potential and the second source electrode is at a low potential, the second gate of the two gates is turned off, and when the first source electrode is at a low potential and the second source electrode is at a high potential, the first gate of the two gates is turned off;

[0016] The isolation region surrounds the electrode in the active region, and includes at least one circle of ion implantation region and at least one circle of metal ring structure, wherein the metal ring structure and the ion implantation region are arranged in the isolation region at intervals, and the ion implantation region is closest to the electrode in the active region;

[0017] The metal ring structure is connected to the substrate via a through hole on the epitaxial structure, or the metal ring structure is connected to the substrate via internal metal interconnection and external packaging wire bonding;

[0018] The potential of the metal ring structure, the substrate, and the potential of the source at the uppermost end or the lowermost end of the active region are the same or approximately equal.

[0019] Another aspect of the present invention provides a method for manufacturing a semiconductor device having an equipotential electrode structure, comprising:

[0020] providing an epitaxial structure on a substrate;

[0021] The active region and the isolation region of the semiconductor device are arranged in a region of the epitaxial structure, wherein the semiconductor device is a semiconductor device with an equipotential electrode structure as described in one aspect or another aspect of the embodiment of the present invention;

[0022] The substrate of the region and the epitaxial structure are cut to obtain the semiconductor device.

[0023] It can be seen that the semiconductor device of this embodiment mainly sets an isolation region around the active region of the epitaxial structure, and when setting the electrodes of the active region, the source electrodes at the top and bottom of the active region are set as electrodes with equal potentials, and the adjacent source electrodes are electrodes with unequal potentials, and at least one circle of metal ring structure and at least one ion implantation region are set in the isolation region, so that the reliability of the source electrode in the active region can be effectively improved through the metal ring structure and the ion implantation region, thereby achieving high reliability of the semiconductor device. Moreover, the potential of the metal ring structure, the substrate and the source electrode at the top or bottom of the active region are the same or approximately equal, which can reduce electrochemical corrosion, and thus the potential difference inside and outside the metal ring structure can be completely eliminated to obtain high reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0025] Figure 1a is a front view of a semiconductor device provided by one embodiment of the present invention;

[0026] Figure 1b is a cross-sectional view of a semiconductor device in one embodiment of the present invention;

[0027] Figure 1c is a schematic diagram of a metal ring structure in one embodiment of the present invention;

[0028] Figure 1d is a front view of another semiconductor device provided by one embodiment of the present invention;

[0029] Figure 1e is a cross-sectional view of another semiconductor device according to an embodiment of the present invention;

[0030] Figure 2a is a front view of a semiconductor device provided by a second embodiment of the present invention;

[0031] Figure 2b is a cross-sectional view of a semiconductor device in a second embodiment of the present invention;

[0032] Figure 2c is a front view of another semiconductor device provided by a second embodiment of the present invention;

[0033] Figure 2d is a cross-sectional view of another semiconductor device according to a second embodiment of the present invention;

[0034] Figure 3a is a cross-sectional view of a semiconductor device in a third embodiment of the present invention;

[0035] Figure 3b is a cross-sectional view of another semiconductor device according to a third embodiment of the present invention;

[0036] Figure 4a is a front view of a semiconductor device provided by a fourth embodiment of the present invention;

[0037] Figure 4b is a cross-sectional view of a semiconductor device in a fourth embodiment of the present invention;

[0038] Figure 4c is a front view of another semiconductor device provided by a fourth embodiment of the present invention;

[0039] Figure 4d is a cross-sectional view of another semiconductor device in a fourth embodiment of the present invention;

[0040] Figure 5 It is a flow chart of a method for manufacturing a semiconductor device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0041] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0043] The embodiment of the present invention provides a semiconductor device with an equipotential electrode structure, such as a bidirectional voltage-resistant bidirectionally conductive GaN HEMT device, etc. Figure 1a A front view of the semiconductor device shown, and Figure 1bThe semiconductor device shown is arranged along the Figure 1a As shown in the dashed cross-sectional view, the semiconductor device in this embodiment may include: an epitaxial structure 12, the epitaxial structure 12 is arranged on a substrate 13, and the epitaxial structure 12 includes an active region 10 and an isolation region 11 outside the active region, wherein:

[0044] (1) The active region 10 includes a plurality of sources of the semiconductor device and gates corresponding to the sources. The uppermost source and the lowermost source of the active region 10 are electrodes with equal potentials, and adjacent sources are electrodes with unequal potentials.

[0045] It can be understood that the source and gate distribution in the active area 10 can be various, which are not limited here. In one case, Figure 1a As shown, the active area 10 includes multiple groups of electrodes of the semiconductor device, each group of electrodes includes a source electrode and a gate electrode surrounding the source electrode. Specifically, the source electrode can be a strip electrode, and the gate electrode is a ring electrode surrounding the source electrode. The potentials of the sources included in the adjacent electrode groups in the multiple groups of electrodes are unequal potentials. Figure 1a The bars filled with oblique lines represent the source, and the bars filled with dots represent the gate. The first source electrode Source1 and the second source electrode Source2 are electrodes with unequal potentials. For example, if the first source electrode Source1 is at a high potential, the second source electrode Source2 is at a low potential. In this embodiment, the electrode group at the top end of the electrodes in the active area 10 includes the second source electrode Source2, and the electrode group at the bottom end includes the second source electrode Source2.

[0046] In a specific implementation, a field plate (Fieldplate) is generally provided above any gate (Gate1 and Gate2), which may be a metal sheet, so that the electric field between the two gates is evenly distributed.

[0047] (2) The isolation region 11 surrounds the electrode in the active region 10, and includes at least one circle of ion implantation region (Implantarea) 110 and at least one circle of metal ring structure (Guard ring) 111. The metal ring structure 111 is arranged in the isolation region 11 at intervals from the ion implantation region 110, and the ion implantation region 110 is the closest to the electrode in the active region 10. In other words, the ion implantation region 110 is arranged in a circle close to the active region 10, the metal ring structure 111 is arranged in a circle outside the ion implantation region 110, and the ion implantation region 110 can also be arranged in a circle outside the metal ring structure 111.

[0048] like Figure 1a As shown, the isolation region 11 includes a circle of ion implantation regions 110 and a circle of metal ring structures 111 . The circle of metal ring structures 111 is disposed outside the circle of ion implantation regions 110 .

[0049] It should be noted that if Figure 1b As shown, the electrode in the active area 10 and any circle of metal ring structure 111 in the isolation area 11 are arranged on the epitaxial structure 12 of the semiconductor device, and any circle of ion implantation region 110 in the isolation area 11 is arranged in the epitaxial structure 12, mainly formed by implanting ions into the epitaxial structure 12.

[0050] In a specific implementation process, the metal ring structure 111 may include a metal ring formed by one or more metal structures, such as an ohmic metal ring. Figure 1c As shown, the metal ring structure 111 includes an ohmic metal ring and at least one layer of metal structure ( Figure 1c In the figure, two metal structures, metal1 and metal2, are used as an example for explanation), and the metal ring structure 111 may also have other structures as long as it forms a ring, and is not limited to the following. Figure 1c Thus, the metal ring structure 111 is connected to the two-dimensional electron gas below, and the two-dimensional electron gas in the inner ring ion implantation region 110 is destroyed by the ion implantation structure, forming a high resistance region.

[0051] (3) The metal ring structure 111 is connected to the substrate 13 through a through hole on the epitaxial structure 12. Generally, when manufacturing a semiconductor device, the epitaxial structure 12 of the semiconductor device is set on the substrate 13, and then a GaN through hole (Through GaN Via, TGV) is set in the epitaxial structure 12 through the TGV process, and then the metal ring structure 111 is connected to the substrate 13 through the TGV.

[0052] It can be understood that in other specific embodiments, the metal ring structure 111 can be connected to the substrate 13 through internal metal interconnection and external packaging wire bonding. Specifically, when manufacturing a semiconductor device, an epitaxial structure 12 is set on the substrate 13, and the metal ring structure 111 is connected to the substrate 13 through packaging wire bonding.

[0053] This can be achieved without the TGV process Figure 1a The same effect of the semiconductor device shown does not require additional TGV process steps, but is constrained by the area of ​​the semiconductor device (because bonding pads need to be added to the surface of the semiconductor device, which may be difficult to achieve with a semiconductor device of smaller area).

[0054] (4) In the semiconductor device of this embodiment, the potential induced by the metal ring structure 111, the substrate 13, and the source electrode at the top or bottom of the active region 10 (ie, the second source electrode Source2) are the same or approximately equal.

[0055] In some specific embodiments, the metal ring structure 111 and the substrate 13 are short-circuited through TGV or packaging connection and floated, and the potential induced by the metal ring structure 111 is close to the potential of the second source source2. There is no potential difference between the metal ring structure 111 and the edge of the cutting path, and the potential difference between the metal ring structure 111 and the second source source2 at the upper and lower ends of the active area 10 is also small, or close to no potential difference, which can further reduce the reliability risk.

[0056] Furthermore, after the metal ring structure 111 and the substrate 13 are short-circuited through TGV or package connection, and short-circuited with the second source source2, the metal ring structure 111, the substrate 13, and the second source source2 always maintain the same potential, which can reduce electrochemical corrosion. In this way, the potential difference inside and outside the metal ring structure 111 can be completely eliminated to obtain high reliability. In particular, in some low-frequency voltage semiconductor devices (the potential switching frequency of the first source Source1 and the second source Source2 is low), the reliability of the semiconductor device can be better improved.

[0057] In addition, it should be noted that, in the manufacturing process of the semiconductor device of this embodiment, the active region 10 and the isolation region 11 of the semiconductor device are arranged on a region of the epitaxial structure of the substrate 13, and the substrate 13 and the epitaxial structure 12 of the region are cut to obtain the semiconductor device. In this way, in this manufacturing process, the metal ring structure 111 of the isolation region 11 can cut off the continuity of the medium, prevent the mechanical damage of the cutting from spreading to the active region 10, and thus prevent the substrate 13 and the electrodes in the active region 10 from generating leakage channels and causing breakdown.

[0058] If the semiconductor device of this embodiment is applied to GaN HEMT, it is easy to implement and compatible with the existing GaN HEMT process, without adding masks and process steps, and can be applied to a variety of GaN HEMT devices, including but not limited to P-GaN HEMT, MIS-HEMT, SBD-Gate HEMT, etc.; it can also be applied to devices of different materials, including but not limited to silicon, silicon carbide, gallium arsenide, gallium oxide, etc.

[0059] Thus, in the process of manufacturing semiconductor devices:

[0060] The endpoints of the second source Source2 at the top and the second source Source2 at the bottom in the active area 10 are protected by the gate and the field plate between the isolation area 11, so that the field plate optimizes the electrode between the active area 10 and the isolation area 11, so that the electric field distribution is uniform, further reducing the influence of the two sources on the potential of the metal ring structure 111, and improving the reliability between the source at the end of the active area 10 and the metal ring structure 111.

[0061] The two-dimensional electron gas region below the metal ring structure 111 is at the same potential as the metal ring structure 111, and because the two-dimensional electron gas region is in a low resistance state, no voltage difference is generated between different positions in the region. The voltage difference between the metal ring structure 111 and the cutting path of the epitaxial structure 12 on the substrate 13 is mainly borne by the edge of the cutting path, so that the electrochemical corrosion only occurs at the edge of the cutting path and does not further spread to the active area 10.

[0062] For the left and right endpoints of the electrodes Source1 / Gate1 / Source2 / Gate2 in the active area 10, since their voltages alternate between high and low, most of the electric field lines can terminate each other, which can prevent a large number of electric field lines from overflowing outside the active area 10, and the reliability is higher than that above and below the active area 10.

[0063] Furthermore, during the operation of the semiconductor device, the metal ring structure 111 , the substrate 13 , and the second source electrode source2 are always kept at the same potential, thereby avoiding the occurrence of electrochemical corrosion to the greatest extent.

[0064] Combining the above functions, the reliability of both the inner and outer regions of the isolation region 11 is effectively improved, and ultimately the overall high reliability of the semiconductor device is achieved.

[0065] In another case, if Figure 1d A front view of a semiconductor device is shown, and Figure 1e The semiconductor device shown is arranged along the Figure 1d The semiconductor device shown in the dashed line cross-sectional view is Figure 1a The semiconductor device shown in FIG. 1 is similar to the semiconductor device shown in FIG. 1 , except that the distribution of the electrodes in the active region 10 of the semiconductor device is different from that in the above-mentioned Figure 1a The distribution of electrodes in the active region 10 of the semiconductor device shown is different. Specifically, in the semiconductor device:

[0066] Two adjacent sources in the active area 10 are the first source Source1 and the second source Source2 of unequal potentials. Two gates are arranged between the adjacent sources. When the semiconductor device is turned on, the two gates are turned on, and the two-way conduction of the semiconductor device can be realized. When the semiconductor device is turned off, when the first source Source1 is at a high potential and the second source Source2 is at a low potential, the second gate Gate2 of the two gates is turned off, so that the active area 10 between the first source Source1 and the second gate Gate2 bears the high voltage when turned off; when the first source Source1 is at a low potential and the second source Source2 is at a high potential, the first gate Gate1 of the two gates is turned off, so that the active area 10 between the second source Source2 and the first gate Gate1 bears the high voltage when turned off, so that the semiconductor device can be turned off.

[0067] It can be seen that the semiconductor device of this embodiment mainly sets an isolation region around the active region of the epitaxial structure, and when setting the electrodes of the active region, the source electrodes at the top and bottom of the active region are set as electrodes with equal potentials, and the adjacent source electrodes are electrodes with unequal potentials, and at least one circle of metal ring structure and at least one ion implantation region are set in the isolation region, so that the reliability of the source electrode in the active region can be effectively improved through the metal ring structure and the ion implantation region, thereby achieving high reliability of the semiconductor device. Moreover, the potential of the metal ring structure, the substrate and the source electrode at the top or bottom of the active region are the same or approximately equal, which can reduce electrochemical corrosion, and thus the potential difference inside and outside the metal ring structure can be completely eliminated to obtain high reliability.

[0068] A second embodiment of the present invention provides a semiconductor device with an equipotential electrode structure, such as a bidirectional voltage-resistant bidirectionally conductive GaN HEMT device, etc. In one case, as Figure 2a A front view of the semiconductor device shown, and Figure 2b The semiconductor device shown is arranged along the Figure 2a The cross-sectional view of the dotted line shown in FIG. 1 shows that the semiconductor device in this embodiment is different from the semiconductor device in the embodiment shown in FIG. Figure 1a The semiconductor device shown in FIG. 1 is similar to the semiconductor device shown in FIG. 1 , except that, in the semiconductor device of this embodiment, a circle of ion implantation region 110 is provided outside the metal ring structure 111 of the isolation region 11. Specifically, in the semiconductor device of this embodiment:

[0069] The isolation region 11 includes two circles of ion implantation regions 110 and one circle of metal ring structures 111 . The one circle of metal ring structures 111 is disposed between the two circles of ion implantation regions 110 .

[0070] In this way, the two-dimensional electron gas region below the metal ring structure 111 is at the same potential as the metal ring structure 111, and because the two-dimensional electron gas region is in a low resistance state, no voltage difference is generated between different positions in the region. The voltage difference between the metal ring structure 111 and the cutting path of the epitaxial structure 12 on the substrate 13 is mainly borne by the high-resistance peripheral ion implantation region 110 and the edge of the cutting path, so that electrochemical corrosion only occurs in the peripheral ion implantation region 110 and the edge of the cutting path, and will not further spread to the active area 10.

[0071] Compared with the above Figure 1a In the semiconductor device shown, a circle of ion implantation area 110 is arranged between the cutting path and the metal ring structure 111, so as to control the scope of electrochemical corrosion within the peripheral ion implantation area, prevent electrochemical corrosion from invading the interior of the chip, and eliminate the risk of electrochemical corrosion, thereby further enhancing the reliability of the semiconductor device.

[0072] In another case, if Figure 2cA front view of the semiconductor device shown, and Figure 2d The semiconductor device shown is arranged along the Figure 2c The semiconductor device shown in the dashed line cross-sectional view is Figure 1d The semiconductor device shown in the figure is similar to the semiconductor device shown in the figure, except that the semiconductor device of the present embodiment is provided with a circle of ion implantation region 110 outside the metal ring structure 111 of the isolation region 11. Figure 1d In the semiconductor device shown, a circle of ion implantation area 110 is arranged between the cutting path and the metal ring structure 111, so as to control the scope of electrochemical corrosion within the peripheral ion implantation area, prevent electrochemical corrosion from invading the interior of the chip, and eliminate the risk of electrochemical corrosion, thereby further enhancing the reliability of the semiconductor device.

[0073] A third embodiment of the present invention provides a semiconductor device having an equipotential electrode structure, such as a bidirectional voltage-resistant bidirectionally conductive GaN HEMT device, etc. In one case, a front view of the semiconductor device is as shown in FIG. Figure 2a As shown, the semiconductor device is Figure 2a The dashed line cross-section is shown in Figure 3a As shown, the semiconductor device in this embodiment is different from the above Figure 2a The semiconductor device shown is similar to the semiconductor device shown in the figure, except that in the semiconductor device of this embodiment:

[0074] The field plate structure is provided on the metal ring structure of the above embodiment. The field plate can be connected to the metal ring structure or can be a floating field plate, such as Figure 3a The field plate can be arranged between the metal ring structure and the cutting path, or between the metal ring structure and the active area 10, or on both sides. Figure 3a As shown, field plates are provided on both sides to form a metal ring structure 111 a .

[0075] By adding the field plate, the electric field distribution between the metal ring structure 111 a and the active region 10 and the cutting path can be optimized, the electric field peak can be reduced, and the reliability of the semiconductor device can be increased.

[0076] In another case, a front view of a semiconductor device is shown as Figure 2c As shown, the semiconductor device is Figure 2c The dashed line cross-section is shown in Figure 3b As shown, the semiconductor device in this embodiment is different from the above Figure 2c The semiconductor device shown in FIG. 1 is similar to the semiconductor device shown in FIG. 1 , except that in the semiconductor device of this embodiment, a field plate structure is provided on the metal ring structure. The field plate may be connected to the metal ring structure or may be a floating field plate, such as Figure 3bThe field plate can be arranged between the metal ring structure and the cutting path, or between the metal ring structure and the active area 10, or on both sides. Figure 4b As shown, field plates are provided on both sides to form a metal ring structure 111 a .

[0077] The fourth embodiment of the present invention provides a semiconductor device with an equipotential electrode structure, such as a bidirectional voltage-resistant bidirectionally conductive GaN HEMT device, etc. The front view of the semiconductor device is shown in FIG. Figure 4a As shown, the semiconductor device is Figure 4a The dashed line cross-section is shown in Figure 4b As shown, Figure 4a In the figure, a white circle represents a circle of metal ring structure 111, and a black circle represents two circles of ion implantation area 110a. The semiconductor device in this embodiment is different from the above-mentioned Figure 2b The semiconductor device shown in FIG. 1 is similar to the semiconductor device shown in FIG. 1 , except that in the semiconductor device of this embodiment, two circles of ion implantation regions are connected together. Specifically, in the semiconductor device of this embodiment:

[0078] If the isolation region 11 a includes two circles of ion implantation regions, the two circles of ion implantation regions are connected as a whole in the epitaxial structure 12 to form the ion implantation region 110 a . In the other embodiments described above, the two circles of ion implantation regions are completely isolated in the epitaxial structure 12 .

[0079] The inhibition effect of connecting the ion implantation area 110a as a whole on electrochemical corrosion is slightly weaker, but it can still make the semiconductor device have a higher reliability. However, if the metal ring structure 111 and the substrate 13 are short-circuited by TGV or package bonding, combined with the solution of connecting the ion implantation area 110a as a whole in this embodiment, the possibility of electrochemical corrosion can also be greatly reduced.

[0080] It should be noted that the metal ring structure 111 of the semiconductor device in the above-mentioned embodiments is connected to the epitaxial structure 12 of the semiconductor device. In other specific embodiments, the metal ring structure 111 may not be connected to the two-dimensional electron gas or epitaxial layer below, that is, an insulating dielectric layer may exist between the metal ring structure 111 and the epitaxial structure 12. In this way, the inhibitory effect on electrochemical corrosion is slightly weaker, but the semiconductor device can still have a higher reliability. However, if the metal ring structure 111 and the substrate 13 are combined through a TGV or a package wire shorting solution, the possibility of electrochemical corrosion can also be greatly reduced.

[0081] In another case, the front view of the semiconductor device is as follows Figure 4c As shown, the semiconductor device is Figure 4c The dashed line cross-section is shown in Figure 4dAs shown, Figure 4c In the figure, a white circle represents a circle of metal ring structure 111, and a black circle represents two circles of ion implantation area 110a. The semiconductor device in this embodiment is different from the above-mentioned Figure 2c The semiconductor device shown is similar to the one shown in the figure, except that in the semiconductor device of this embodiment, two circles of ion implantation regions are connected together.

[0082] The embodiment of the present invention also provides a method for manufacturing a semiconductor device with an equipotential electrode structure, which is mainly used to manufacture the semiconductor device described in the above embodiment. The flow chart is as follows: Figure 5 As shown, including:

[0083] Step 201: providing an epitaxial structure on a substrate.

[0084] Step 202, the active area and the isolation area of ​​the semiconductor device are arranged in an area of ​​the epitaxial structure, wherein the active area includes a plurality of source electrodes and gate electrodes corresponding to the source electrodes, the source electrodes at the top and bottom of the active area are electrodes with equal potentials, and the potentials of adjacent sources are different, the isolation area includes at least one circle of metal ring structure and at least one circle of ion implantation area, and the potential of the metal ring structure and the potential of the substrate are the same or approximately equal to the potential of the source electrode at the top or bottom of the active area, and the semiconductor device is the semiconductor device described in any of the above embodiments, which will not be described in detail here.

[0085] Step 203, cutting the substrate and epitaxial structure in a region to obtain a semiconductor device.

[0086] It can be understood that a relatively large epitaxial structure can be arranged on a substrate, and corresponding semiconductor devices can be arranged in various regions of the epitaxial structure. Finally, the substrate and the epitaxial structure in each region can be cut out to obtain semiconductor devices.

[0087] A semiconductor device and a method for manufacturing the same provided by an embodiment of the present invention are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for a person skilled in the art, according to the idea of ​​the present invention, there may be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A semiconductor device having an equipotential electrode structure, characterized in that: include: An epitaxial structure, wherein the epitaxial structure is disposed on a substrate, and the epitaxial structure comprises an active region and an isolation region outside the active region, wherein: The active area includes a plurality of source electrodes of the semiconductor device and gate electrodes corresponding to the source electrodes, and the source electrode at the uppermost end and the source electrode at the lowermost end of the active area are electrodes with equal potential; The active area includes a plurality of groups of electrodes, each group of electrodes includes a source electrode and a gate electrode surrounding the source electrode, and the potentials of the sources included in adjacent electrode groups are unequal potentials; The isolation region surrounds the electrode in the active region, and includes at least one circle of ion implantation region and at least one circle of metal ring structure, wherein the metal ring structure and the ion implantation region are arranged in the isolation region at intervals, and the ion implantation region is closest to the electrode in the active region; The metal ring structure is connected to the substrate via a through hole on the epitaxial structure, or the metal ring structure is connected to the substrate via an external packaging wire; The potential of the metal ring structure, the substrate, and the potential of the source at the uppermost end or the lowermost end of the active region are the same or approximately equal.

2. The semiconductor device according to claim 1, wherein The isolation region includes a circle of ion implantation regions and a circle of metal ring structures, and the circle of metal ring structures is arranged outside the circle of ion implantation regions, or; The isolation region includes two circles of ion implantation regions and one circle of metal ring structure, and the one circle of metal ring structure is arranged between the two circles of ion implantation regions.

3. The semiconductor device according to claim 1 or 2, characterized in that The ion implantation region in the isolation region is arranged in the epitaxial structure; If the isolation region includes two circles of ion implantation regions, the two circles of ion implantation regions are completely isolated within the epitaxial structure; or, If the isolation region includes two circles of ion implantation regions, the two circles of ion implantation regions are connected as a whole within the epitaxial structure.

4. The semiconductor device according to claim 1, wherein: An insulating medium is arranged between the metal ring structure and the epitaxial structure.

5. The semiconductor device according to any one of claims 1 and 2, characterized in that The metal ring structure includes a metal ring formed by one or more layers of metal structures.

6. The semiconductor device according to claim 5, characterized in that A field plate is disposed on the metal ring structure.

7. A semiconductor device having an equipotential electrode structure, characterized in that: include: An epitaxial structure, wherein the epitaxial structure is disposed on a substrate, and the epitaxial structure comprises an active region and an isolation region outside the active region, wherein: The active area includes a plurality of source electrodes of the semiconductor device and gate electrodes corresponding to the source electrodes, and the source electrode at the uppermost end and the source electrode at the lowermost end of the active area are electrodes with equal potential; Each electrode in the active area is a strip electrode, and two gates are arranged between two adjacent first source electrodes and second source electrodes in the active area. When the semiconductor device is turned on, the two gates are turned on; when the semiconductor device is turned off, when the first source electrode is at a high potential and the second source electrode is at a low potential, the second gate of the two gates is turned off, and when the first source electrode is at a low potential and the second source electrode is at a high potential, the first gate of the two gates is turned off; The isolation region surrounds the electrode in the active region, and includes at least one circle of ion implantation region and at least one circle of metal ring structure, wherein the metal ring structure and the ion implantation region are arranged in the isolation region at intervals, and the ion implantation region is closest to the electrode in the active region; The metal ring structure is connected to the substrate via a through hole on the epitaxial structure, or the metal ring structure is connected to the substrate via internal metal interconnection and external packaging wire bonding; The potential of the metal ring structure, the substrate, and the potential of the source at the uppermost end or the lowermost end of the active region are the same or approximately equal.

8. The semiconductor device according to claim 7, wherein: The isolation region includes a circle of ion implantation regions and a circle of metal ring structures, and the circle of metal ring structures is arranged outside the circle of ion implantation regions, or; The isolation region includes two circles of ion implantation regions and one circle of metal ring structure, and the one circle of metal ring structure is arranged between the two circles of ion implantation regions.

9. The semiconductor device according to claim 7 or 8, characterized in that The ion implantation region in the isolation region is arranged in the epitaxial structure; If the isolation region includes two circles of ion implantation regions, the two circles of ion implantation regions are completely isolated within the epitaxial structure; or, If the isolation region includes two circles of ion implantation regions, the two circles of ion implantation regions are connected as a whole within the epitaxial structure.

10. A method for manufacturing a semiconductor device having an equipotential electrode structure, characterized in that: include: providing an epitaxial structure on a substrate; The active region and the isolation region of the semiconductor device are arranged in a region of the epitaxial structure, wherein the semiconductor device is a semiconductor device with an equipotential electrode structure as claimed in any one of claims 1 to 9; The substrate of the region and the epitaxial structure are cut to obtain the semiconductor device.

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