Silicon-based multi-dimensional integrated sensor array for shipboard cleaning

Abstract

The present invention belongs to the technical field of integrated sensors and is a silicon-based multi-dimensional integrated sensor array used for cleaning the ship's side. The array comprises an optical fiber gyroscope, an electrical conductivity-temperature sensor, an aluminum oxide humidity sensor and a pressure sensor which are arranged on a silicon-based substrate in sequence from top to bottom. The optical fiber gyroscope and the electrical conductivity-temperature sensor, the electrical conductivity-temperature sensor and the aluminum oxide humidity sensor, and the aluminum oxide humidity sensor and the pressure sensor are bonded by using silicon-based bonding technology. By using silicon-based bonding technology, different types of sensors can be integrated on the same silicon-based platform to achieve high integration. The multifunctionality enables the integrated system to simultaneously monitor different physical quantities, such as angular velocity, electrical conductivity, humidity, pressure and temperature.

Description

Technical Field

[0001] The invention belongs to the technical field of integrated sensors, and in particular relates to a silicon-based multi-dimensional integrated sensor array used for cleaning ship sides. Background Art

[0002] With the rapid development of the shipping industry, when ships are operating at sea, marine organisms, dirt, salt and other impurities often accumulate on the side of the ship. These impurities not only affect the appearance of the ship, but also increase the ship's sailing resistance, reduce sailing efficiency, and even cause corrosion damage to the hull. Therefore, cleaning the side of the ship has become an indispensable part of ship maintenance.

[0003] Traditional methods of cleaning the side of a ship are mostly manual or mechanical cleaning, which has problems such as low efficiency, high cost, and incomplete cleaning. In order to solve these problems, in recent years, with the rapid development of sensor technology and micro-nano processing technology, integrated sensors based on silicon-based bonding technology have gradually become a research hotspot in the field of shipboard cleaning. Summary of the invention

[0004] The purpose of the present invention is to overcome the shortcomings of the prior art and provide a silicon-based multi-dimensional integrated sensor array for use in shipboard cleaning.

[0005] The present invention adopts the following technical solution:

[0006] A silicon-based multi-dimensional integrated sensor array used for shipboard cleaning includes an optical fiber gyroscope, a conductivity-temperature sensor, an aluminum oxide humidity sensor, and a pressure sensor arranged on a silicon-based substrate from top to bottom, wherein the optical fiber gyroscope and the conductivity-temperature sensor, the conductivity-temperature sensor and the aluminum oxide humidity sensor, and the aluminum oxide humidity sensor and the pressure sensor are bonded using silicon-based bonding technology;

[0007] The aluminum oxide humidity sensor comprises a silicon substrate, an aluminum oxide film with a porous structure formed inside the silicon substrate, and a plurality of aluminum electrodes disposed on the aluminum oxide film;

[0008] The preparation method of the aluminum oxide humidity sensor is as follows:

[0009] Step 1, using spin coating to evenly coat the aluminum nitrate solution on the surface of the silicon substrate, and then placing it at a temperature of 100° C. to react for 24 hours, and when the reaction is carried out for 8 hours, the addition is temporarily stopped, and a 2% polyvinyl alcohol solution is sprayed onto the surface of the silicon substrate in a mist form by spraying, and then the heating reaction is continued;

[0010] Step 2: After the reaction is completed, the mixture is washed with deionized water and ethanol until neutral, and then subjected to ultrasonic treatment;

[0011] Step 3, heat treating the washed sample at 50° C. for 12 h to form an aluminum oxide film with a porous structure inside on the silicon substrate;

[0012] Step 4: Using 3D printing technology to make an aluminum electrode on the aluminum oxide film to obtain the aluminum oxide humidity sensor.

[0013] Furthermore, in step 1, the spraying amount of polyvinyl alcohol is 0.03-0.07 ml.

[0014] Furthermore, the fiber optic gyroscope includes a substrate, a bent double Y-branch waveguide, a light source, a photodetector and a distributed fiber optic ring. The bent double Y-branch waveguide is arranged on the substrate, including two input ends arranged on one side thereof and two output ends arranged on the other side thereof. The light source and the photodetector are respectively coupled with the two input ends of the bent double Y-branch waveguide, and the distributed fiber optic ring is fused with the two output ends of the bent double Y-branch waveguide.

[0015] Furthermore, the bent double Y-branch waveguide includes a first Y waveguide and a second Y waveguide that are spaced apart and a bent waveguide connected between the first Y waveguide and the second Y waveguide, the two input ends are arranged on the first Y waveguide, and the two output ends are arranged on the second Y waveguide.

[0016] Furthermore, the distributed optical fiber ring includes three optical fiber ring segments arranged at intervals and two optical fiber ring segments respectively connected between two adjacent optical fiber ring segments, and the optical fiber ring segment located in the first position is fused with two output ends of the bent double Y-branch waveguide.

[0017] Furthermore, the preparation method of the distributed optical fiber ring is as follows: after heating the optical fiber ring segment raw material to 1800-1900°C, pouring it into a corresponding mold, cooling and forming the optical fiber ring segment, and then using the melt taper technology to form the optical fiber ring between two adjacent optical fiber segments to obtain the distributed optical fiber ring.

[0018] Furthermore, the conductivity-temperature sensor includes a silicon-based substrate and a silicon dioxide layer, an electrode layer and a silicon nitride layer sequentially arranged on the silicon-based substrate.

[0019] Furthermore, the preparation method of the conductivity-temperature sensor is as follows:

[0020] Step 1: cleaning and pre-treating the silicon-based substrate to remove surface impurities and oxides;

[0021] Step 2: Using micro-nano 3D printing technology to print the silicon dioxide layer and the electrode layer on the silicon-based substrate in sequence;

[0022] Step 3, depositing a silicon nitride layer on the top surface of the electrode layer by plasma enhanced chemical vapor deposition;

[0023] Step 4: pattern-etch the surface of the wafer using photolithography and ion reactive etching processes, and then use acetone solution to remove residual photoresist on the silicon nitride layer to obtain the conductivity-temperature sensor.

[0024] Furthermore, the pressure sensor includes a silicon wafer, a first silicon dioxide film layer and a second silicon dioxide film layer arranged on the silicon wafer, a metal molybdenum film layer arranged in the first silicon dioxide film layer as a resistor and a wire, and an aluminum film arranged on the second silicon dioxide film layer, the second silicon dioxide film layer is provided with a through hole extending downwardly opposite to the metal molybdenum film layer, and the aluminum film includes a main section arranged on the second silicon dioxide film layer and a connecting section filled in the through hole and connected to the relative metal molybdenum film layer.

[0025] Furthermore, the preparation process of the pressure sensor is as follows:

[0026] S1. Clean and level the silicon wafer to remove surface impurities and contaminants;

[0027] S2. Using electron beam exposure processing technology, a nanostructure template corresponding to the design pattern of the pressure sensitive element is prepared on a hard material;

[0028] S3, depositing the first silicon dioxide film directly on the silicon wafer by a nano-printing deposition method, using a PECVD system with a radio frequency of 13.56Mhz, using a plasma enhanced chemical vapor deposition method;

[0029] S4, using micro-nano 3D printing technology to print a metal molybdenum thin film layer on the first silicon oxide film layer;

[0030] S5, patterning the metal molybdenum film layer into resistors and wires by photolithography and etching, and then generating a second silicon dioxide film layer by micro-nano 3D printing technology, and then photolithography and etching the second silicon dioxide film layer to form through holes from the resistor to the top of the second silicon dioxide film layer;

[0031] S6, depositing a layer of aluminum thin film by chemical vapor deposition;

[0032] S7. Finally, the silicon wafer is mechanically thinned, and then the silicon wafer is etched by deep reactive ion etching to release it to form a pressure sensor.

[0033] From the above description of the present invention, it can be seen that compared with the prior art, the beneficial effects of the present invention are: first, high integration and multifunctionality: through silicon-based bonding technology, different types of sensors can be integrated on the same silicon-based platform to achieve high integration, and multifunctionality enables the integrated system to simultaneously monitor different physical quantities, such as angular velocity, conductivity, humidity, pressure and temperature; second, improve measurement accuracy and stability: silicon-based materials have excellent properties, such as high stability and high reliability, which can improve the measurement accuracy of sensors. After integration, each sensor can share part of the circuit and calibration system to reduce the source of error and improve the overall measurement accuracy; third, optimize power consumption and volume: high integration helps to reduce the total volume of the system and make it more compact; shared circuits and components can reduce system power consumption and improve energy efficiency; fourth, enhance environmental adaptability: the integrated system can adapt to a wider range of environmental conditions, such as temperature changes, humidity changes, etc., and by integrating silicon-based temperature sensors, temperature compensation can be achieved to improve the measurement accuracy of other sensors at different temperatures; fifth, simplify system design and maintenance: integrated design makes the entire system more concise, reduces the number of cables and connectors, and reduces the risk of system failure. During maintenance, only a single system needs to be operated, which greatly simplifies the maintenance process; Sixth, expand the application fields: the integrated system has broad application prospects and can be applied to environmental monitoring, industrial automation, aerospace, medical health and other fields; especially for those scenarios that need to monitor multiple physical quantities at the same time, the integrated system can provide more comprehensive and accurate data support; Seventh, improve system reliability: silicon-based materials have good mechanical properties and chemical stability, which can improve the reliability and durability of the system, and silicon-based bonding technology can also reduce the risk of system failure caused by loose or damaged connectors; Eighth, promote intelligent development: integrated systems can be more easily connected to computers, microprocessors and other devices to achieve real-time transmission and processing of data, which will help promote the development of intelligent applications and improve the automation level and intelligence of the system. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a structural cross-sectional view of a silicon-based multi-dimensional integrated sensor array;

[0035] Figure 2 It is a top view of the structure of the fiber optic gyroscope;

[0036] Figure 3 It is a structural cross-sectional view of a fiber optic gyroscope;

[0037] Figure 4 It is a structural cross-sectional view of the conductivity-temperature sensor;

[0038] Figure 5 It is a structural cross-sectional view of an aluminum oxide humidity sensor;

[0039] Figure 6 It is a structural cross-sectional view of the pressure sensor;

[0040] In the figure, 1-fiber gyroscope, 2-conductivity-temperature sensor, 3-alumina humidity sensor, 4-pressure sensor, 11-substrate, 111-silicon substrate, 112-lithium niobate substrate, 12-bent double Y-branch waveguide, 121-input end, 122-output end, 123-first Y-waveguide, 124-second Y-waveguide, 125-bent waveguide, 126-traveling wave electrode, 13-light source, 14-photodetector, 1 5-distributed optical fiber ring, 151-optical fiber ring segment, 152-optical fiber ring, 21-silicon-based substrate, 22-silicon dioxide layer, 23-electrode layer, 24-silicon nitride layer, 31-silicon substrate, 32-aluminum oxide film, 33-aluminum electrode, 41-silicon wafer, 42-first silicon oxide film layer, 43-second silicon oxide film layer, 44-metal molybdenum film layer, 45-aluminum film, 451-main section, 452-connecting section, 46-through hole. DETAILED DESCRIPTION

[0041] The present invention is further described below through specific implementation modes.

[0042] Reference Figures 1 to 6 As shown, the silicon-based multi-dimensional integrated sensor array used for shipboard cleaning includes an optical fiber gyroscope 1, a conductivity-temperature sensor 2, an aluminum oxide humidity sensor 3 and a pressure sensor 4 which are arranged on a silicon-based substrate from top to bottom. Specifically, the optical fiber gyroscope 1 and the conductivity-temperature sensor 2, the conductivity-temperature sensor 2 and the aluminum oxide humidity sensor 3, and the aluminum oxide humidity sensor 3 and the pressure sensor 4 are bonded using silicon-based bonding technology, wherein the bonding methods include direct bonding, anodic bonding, and eutectic bonding. During preparation, a suitable bonding process is selected according to the material properties and bonding requirements of the sensor; after the bonding is completed, the prepared silicon-based multi-dimensional integrated sensor array is packaged to protect the sensor elements from external influences; after the packaging is completed, the prepared silicon-based multi-dimensional integrated sensor array is tested for performance, and the sensor is calibrated and optimized according to the test results to ensure that its performance meets the design requirements. The performance test includes the accuracy test of the optical fiber gyroscope, the temperature response test of the conductivity-temperature sensor, the humidity response test of the aluminum oxide humidity sensor, the pressure response test of the micro-nano pressure sensor, etc.

[0043] The optical fiber gyroscope 1 comprises a substrate 11, a bent double Y-branch waveguide 12, a light source 13, a photodetector 14 and a distributed optical fiber ring 15. The substrate 11 comprises a lithium niobate substrate 112 and a silicon substrate 111 which are arranged in sequence from top to bottom. The bent double Y-branch waveguide 12 is arranged on the niobate substrate 112, and comprises two input ends 121 arranged on one side thereof and two output ends 122 arranged on the other side thereof. The light source 13 and the photodetector 14 are respectively coupled with the two input ends 121 of the bent double Y-branch waveguide 12. The distributed optical fiber ring 15 is fused with the two output ends 122 of the bent double Y-branch waveguide 12.

[0044] The bent double Y-branch waveguide 12 includes a first Y-waveguide 123 and a second Y-waveguide 124 which are arranged on a lithium niobate substrate 112 and extend inwardly, a bent waveguide 125 which is arranged on the lithium niobate substrate 112 and extends inwardly and is connected between the first Y-waveguide 123 and the second Y-waveguide 124, and a traveling wave electrode 126 which is arranged on the lithium niobate substrate 112 and extends outwardly, two input ends 121 are arranged on the first Y-waveguide 123, and two output ends 122 are arranged on the second Y-waveguide 124.

[0045] The distributed optical fiber ring 15 includes three optical fiber ring segments 151 arranged at intervals and two optical fiber ring parallel fibers 152 respectively connected between two adjacent optical fiber ring segments 151. The optical fiber ring segment 151 located in the first position is fused with the two output ends 122 of the bent double Y-branch waveguide 12. Specifically, the preparation method of the distributed optical fiber ring 15 is as follows: after the raw material of the optical fiber ring segment 151 is heated to 1800-1900°C, it is poured into a corresponding mold, and cooled to form the optical fiber ring segment 151, and then the optical fiber ring parallel fiber is formed by the fusion drawing cone technology between the two adjacent optical fiber segments 151 to obtain the distributed optical fiber ring 15; by limiting the preparation method of the optical fiber ring segment 151, it is formed by mold casting, so as to avoid defects in the optical fiber caused by temperature and force changes during the drawing process, and further reduce the difficulty of burning the optical fiber ring segment 151.

[0046] The conductivity-temperature sensor 2 includes a silicon-based substrate 21 and a silicon dioxide layer 22 , an electrode layer 23 and a silicon nitride layer 24 which are sequentially arranged on the silicon-based substrate 21 .

[0047] Specifically, the preparation method of the conductivity-temperature sensor 2 is as follows:

[0048] Step 1: cleaning and pre-treating the silicon-based substrate 21 to remove surface impurities and oxides;

[0049] Step 2: Using micro-nano 3D printing technology to print the silicon dioxide layer 22 and the electrode layer 23 on the silicon-based substrate 21 in sequence;

[0050] Step 3, depositing a silicon nitride layer 24 on the top surface of the electrode layer 23 by plasma enhanced chemical vapor deposition;

[0051] Step 4: pattern the wafer surface using photolithography and ion reactive etching processes, and then use acetone solution to remove the residual photoresist on the silicon nitride layer 24 to obtain the conductivity-temperature sensor 2.

[0052] The aluminum oxide humidity sensor 3 comprises a silicon substrate 31 , an aluminum oxide film 32 with a porous structure formed inside and disposed on the silicon substrate 31 , and a plurality of aluminum electrodes 33 disposed on the aluminum oxide film 32 .

[0053] The preparation method of the aluminum oxide humidity sensor 3 is as follows:

[0054] Step 1, using spin coating to evenly coat the aluminum nitrate solution on the surface of the silicon substrate 31, and then placing it at a temperature of 100° C. to react for 24 hours. When the reaction is carried out for 8 hours, the addition is temporarily stopped, and a 2% polyvinyl alcohol solution is sprayed onto the surface of the silicon substrate 31 in a mist form by spraying, and then the heating reaction is continued;

[0055] Step 2: After the reaction is completed, the mixture is washed with deionized water and ethanol until neutral, and then subjected to ultrasonic treatment;

[0056] Step 3, heat-treating the washed sample at 50° C. for 12 hours to form an aluminum oxide film 32 with a porous structure inside on the silicon substrate 31;

[0057] Step 4: Use 3D printing technology to make an aluminum electrode 33 on the aluminum oxide film 32 to obtain the aluminum oxide humidity sensor 3.

[0058] Specifically, in step 1, the spraying amount of polyvinyl alcohol is 0.03-0.07ml; the alumina humidity sensor 3 defined in the present application, by placing a precursor solution containing aluminum ions under appropriate conditions, so that the nanoparticles or precursors therein are spontaneously arranged into a porous structure, and then through heat treatment, the crystallization and densification of aluminum oxide are promoted, while the stability of the porous structure is enhanced to form a stable nanoporous aluminum oxide film 32; wherein, the processing method of the precursor solution is specifically defined, and during the reaction process, the polyvinyl alcohol solution is sprayed to guide the aluminum oxide molecules to self-assemble on the surface of the silicon substrate 31 to form a porous structure to ensure the formation of the porous structure of the aluminum oxide film 32.

[0059] The pressure sensor 4 includes a silicon wafer 41, a first silicon dioxide film layer 42 and a second silicon dioxide film layer 43 arranged on the silicon wafer 41, a metal molybdenum film layer 44 arranged in the first silicon dioxide film layer 43 as a resistor and a wire, and an aluminum film 45 arranged on the second silicon dioxide film layer 44, wherein the second silicon dioxide film layer 43 is provided with a through hole 46 extending downwardly and opposite to the metal molybdenum film layer 44. Specifically, the aluminum film 45 includes a main section 451 arranged on the second silicon dioxide film layer 44 and a connecting section 452 filled in the through hole 46 and connected to the relative metal molybdenum film layer 44.

[0060] Among them, the preparation process of the pressure sensor is as follows:

[0061] S1, cleaning and leveling the silicon wafer 41 to remove surface impurities and contaminants;

[0062] S2. Using electron beam exposure processing technology, a nanostructure template corresponding to the design pattern of the pressure sensitive element is prepared on a hard material;

[0063] S3, by nano-printing deposition, using a PECVD system with a radio frequency of 13.56Mhz, and using plasma enhanced chemical vapor deposition to directly deposit the first silicon dioxide film 42 on the silicon wafer 41;

[0064] S4, using micro-nano 3D printing technology to print a metal molybdenum thin film layer 44 on the first silicon oxide film layer 42;

[0065] S5, patterning the metal molybdenum film layer 44 into resistors and wires by photolithography and etching, and then generating the second silicon dioxide film layer 43 by micro-nano 3D printing technology, and then photolithography and etching the second silicon dioxide film layer 43 to form through holes 46 from the resistor to the top of the second silicon dioxide film layer 43;

[0066] S6, depositing a layer of aluminum film 45 by chemical vapor deposition;

[0067] S7 . Finally, the silicon wafer 41 is mechanically thinned, and then the silicon wafer 41 is etched by deep reactive ion etching to release and form the pressure sensor 4 .

[0068] The present application defines the structural composition of a silicon-based multi-dimensional integrated sensor array, which is integrated by a fiber optic gyroscope 1, a conductivity-temperature sensor 2, an alumina humidity sensor 3 and a temperature sensor 4 through silicon-based bonding technology, so as to integrate different types of sensors on the same silicon-based platform, thereby achieving high integration and multifunctionality, so that the integrated system can simultaneously monitor different physical quantities, such as angular velocity, conductivity, humidity, pressure and temperature, etc.; each sensor can share part of the circuit and calibration system to reduce the source of error and improve the overall measurement accuracy; and shared circuits and components can reduce system power consumption and improve energy utilization efficiency; the integrated sensor array can adapt to a wider range of environmental conditions, such as temperature changes, humidity changes, etc., and by integrating a silicon-based temperature sensor, temperature compensation can be achieved to improve the measurement accuracy of other sensors at different temperatures.

[0069] The integrated design makes the entire system more concise, reduces the number of cables and connectors, and reduces the risk of system failure. During maintenance, only a single system needs to be operated, which greatly simplifies the maintenance process. The integrated system can be more easily connected to computers, microprocessors and other devices to achieve real-time transmission and processing of data, which helps promote the development of intelligent applications and improve the automation and intelligence level of the system.

[0070] The above description is only a preferred embodiment of the present invention, and therefore cannot be used to limit the scope of implementation of the present invention. That is, equivalent changes and modifications made according to the application scope of the present invention and the contents of the specification should still fall within the scope of the present invention.

Claims

1. A silicon-based multi-dimensional integrated sensor array for shipboard cleaning, characterized by: The invention comprises an optical fiber gyroscope, an electrical conductivity-temperature sensor, an aluminum oxide humidity sensor and a pressure sensor which are sequentially arranged on a silicon-based substrate from top to bottom, wherein the optical fiber gyroscope and the electrical conductivity-temperature sensor, the electrical conductivity-temperature sensor and the aluminum oxide humidity sensor, and the aluminum oxide humidity sensor and the pressure sensor are bonded by using silicon-based bonding technology; The aluminum oxide humidity sensor comprises a silicon substrate, an aluminum oxide film with a porous structure formed inside the silicon substrate, and a plurality of aluminum electrodes disposed on the aluminum oxide film; The preparation method of the aluminum oxide humidity sensor is as follows: Step 1, using spin coating to evenly coat the aluminum nitrate solution on the surface of the silicon substrate, and then placing it at a temperature of 100° C. to react for 24 hours, and when the reaction is carried out for 8 hours, the addition is temporarily stopped, and a 2% polyvinyl alcohol solution is sprayed onto the surface of the silicon substrate in a mist form by spraying, and then the heating reaction is continued; Step 2: After the reaction is completed, the mixture is washed with deionized water and ethanol until neutral, and then subjected to ultrasonic treatment; Step 3, heat treating the washed sample at 50° C. for 12 h to form an aluminum oxide film with a porous structure inside on the silicon substrate; Step 4: Using 3D printing technology to make an aluminum electrode on the aluminum oxide film to obtain the aluminum oxide humidity sensor.

2. The silicon-based multi-dimensional integrated sensor array for shipboard cleaning according to claim 1 is characterized in that: In step 1, the spraying amount of polyvinyl alcohol is 0.03-0.07 ml.

3. The silicon-based multi-dimensional integrated sensor array for shipboard cleaning according to claim 1 is characterized in that: The fiber optic gyroscope includes a substrate, a bent double Y-branch waveguide, a light source, a photodetector and a distributed fiber optic ring. The bent double Y-branch waveguide is arranged on the substrate, including two input ends arranged on one side thereof and two output ends arranged on the other side thereof. The light source and the photodetector are respectively coupled with the two input ends of the bent double Y-branch waveguide, and the distributed fiber optic ring is fused with the two output ends of the bent double Y-branch waveguide.

4. The silicon-based multi-dimensional integrated sensor array for shipboard cleaning according to claim 3 is characterized in that: The bent double Y-branch waveguide includes a first Y waveguide and a second Y waveguide arranged at intervals and a bent waveguide connected between the first Y waveguide and the second Y waveguide. The two input ends are arranged on the first Y waveguide, and the two output ends are arranged on the second Y waveguide.

5. The silicon-based multi-dimensional integrated sensor array for shipboard cleaning according to claim 3 is characterized in that: The distributed optical fiber ring includes three optical fiber ring segments arranged at intervals and two optical fiber ring segments connected between two adjacent optical fiber ring segments. The optical fiber ring segment located at the first position is fused with two output ends of the bent double Y branch waveguide.

6. The silicon-based multi-dimensional integrated sensor array for shipboard cleaning according to claim 5 is characterized in that: The preparation method of the distributed optical fiber ring is as follows: after heating the optical fiber ring segment raw material to 1800-1900° C., pouring it into a corresponding mold, cooling and forming the optical fiber ring segment, and then using the fusion taper technology to form the optical fiber ring between two adjacent optical fiber segments to obtain the distributed optical fiber ring.

7. The silicon-based multi-dimensional integrated sensor array for shipboard cleaning according to claim 1 is characterized in that: The conductivity-temperature sensor comprises a silicon-based substrate and a silicon dioxide layer, an electrode layer and a silicon nitride layer sequentially arranged on the silicon-based substrate.

8. The silicon-based multi-dimensional integrated sensor array for shipboard cleaning according to claim 7 is characterized in that: The preparation method of the conductivity-temperature sensor is as follows: Step 1: cleaning and pre-treating the silicon-based substrate to remove surface impurities and oxides; Step 2: Using micro-nano 3D printing technology to print the silicon dioxide layer and the electrode layer on the silicon-based substrate in sequence; Step 3, depositing a silicon nitride layer on the top surface of the electrode layer by plasma enhanced chemical vapor deposition; Step 4: pattern-etch the surface of the wafer using photolithography and ion reactive etching processes, and then use acetone solution to remove residual photoresist on the silicon nitride layer to obtain the conductivity-temperature sensor.

9. The silicon-based multi-dimensional integrated sensor array for shipboard cleaning according to claim 1, characterized in that: The pressure sensor includes a silicon wafer, a first silicon dioxide film layer and a second silicon dioxide film layer arranged on the silicon wafer, a metal molybdenum film layer arranged in the first silicon dioxide film layer as a resistor and a wire, and an aluminum film arranged on the second silicon dioxide film layer, the second silicon dioxide film layer is provided with a through hole extending downwardly opposite to the metal molybdenum film layer, and the aluminum film includes a main section arranged on the second silicon dioxide film layer and a connecting section filled in the through hole and connected to the relative metal molybdenum film layer.

10. The silicon-based multi-dimensional integrated sensor array for shipboard cleaning according to claim 9, characterized in that: The preparation process of the pressure sensor is as follows: S1. Clean and level the silicon wafer to remove surface impurities and contaminants; S2. Using electron beam exposure processing technology, a nanostructure template corresponding to the design pattern of the pressure sensitive element is prepared on a hard material; S3, depositing the first silicon dioxide film directly on the silicon wafer by a nano-printing deposition method, using a PECVD system with a radio frequency of 13.56Mhz, using a plasma enhanced chemical vapor deposition method; S4, using micro-nano 3D printing technology to print a metal molybdenum thin film layer on the first silicon oxide film layer; S5, patterning the metal molybdenum film layer into resistors and wires by photolithography and etching, and then generating a second silicon dioxide film layer by micro-nano 3D printing technology, and then photolithography and etching the second silicon dioxide film layer to form through holes from the resistor to the top of the second silicon dioxide film layer; S6, depositing a layer of aluminum thin film by chemical vapor deposition; S7. Finally, the silicon wafer is mechanically thinned, and then the silicon wafer is etched by deep reactive ion etching to release and form a pressure sensor.

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