Phase shift circuit and phase shifter
By designing a phase shifting circuit including switching transistors and inductors, using a single series switching structure and switch-off parasitic capacitors, the problem of poor performance of existing phase shifters is solved, and high precision, low insertion loss and low amplitude are achieved The effect of error is suitable for the application of phased array systems.
Patent Information
- Application Number
- CN202411182734.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-27
- Publication Date
- 2024-12-20
AI Technical Summary
The poor performance of existing phase shifters makes it difficult to take into account phase shift accuracy, insertion loss and amplitude errors. The power consumption and volume of traditional RF phase shift architectures are large, limiting the performance and application of phased array systems.
A phase shifting circuit including switching transistors M1, M2, M3, resistor Rg, inductor L1, L2, and L3 was designed. A single series switch structure is adopted, and the switch-off state parasitic capacitor is part of the circuit to effectively suppress parasitic parameters and achieve high Accuracy, low insertion loss and low amplitude error.
It achieves high precision, low insertion loss and low amplitude error, and is suitable for the case of ≤45° phase shift degree, simplifying the design and reducing the power consumption and volume of the system.
Smart Images
Figure CN119171874A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the fields of microelectronics, semiconductors and communication technology, and in particular to a phase shift circuit and a phase shifter. Background Art
[0002] Today, we are in an information society, and people are pursuing wireless communication systems with high transmission rates, low latency, and large capacity. Phased array antennas can achieve multi-beam control, have high precision, and have a long lifespan. They are one of the important technologies for realizing information transmission and perception. Traditional antennas are large in size and have single radiation characteristics, while phased array antennas can achieve in-phase superposition of signals by controlling each array element, greatly improving the signal-to-noise ratio of signal reception and the data transmission rate. In addition, the characteristics of multi-beam control can greatly improve the utilization rate of frequency resources, while reducing the waste of transmission power and reducing system power consumption. Phased arrays are widely used in military, aerospace, vehicle-mounted radar, wireless communications, and other fields.
[0003] Phase shifters, as devices for controlling phase, are an important part of phased array systems. Their location determines the architecture type of the phased array system. Generally, a phased array system that completes signal phase shifting in the RF domain is called a phased array system with an RF phase shift architecture. It has lower power consumption and volume than phased array systems of other architectures, so it is one of the most widely used types. Phased arrays generally have a large number of array elements, so a large number of phase shifter modules are required, and they also determine the phase shift accuracy, loss, stability and size of the entire system. Therefore, studying miniaturized, high-performance phase shifters is a challenge faced by the development of high-performance phased arrays.
[0004] A phase shifter is usually a two-port network, which is generally implemented by a switching device and a phase shifting network. The transmission path of the switching device control signal is a reference path or a delay path. The insertion loss of an ideal switch in the on and off states is the same, but in reality the switching device is a non-ideal device, and the phase shift amplitude in the two states changes, that is, there is a certain amplitude fluctuation, which leads to a decrease in the performance of the phase shifter. Summary of the invention
[0005] Based on this, it is necessary to address the technical problem of poor performance of the phase shift circuit in the phase shifter of the prior art, and propose a phase shift circuit, the phase shift circuit comprising: a switching transistor M1, a switching transistor M2, a switching transistor M3, three resistors Rg, a resistor R1, an inductor L1, an inductor L2, and an inductor L3, wherein the source of the switching transistor M1 is connected to the RF signal input terminal, and the drain of the switching transistor M1 is connected to the RF signal output terminal;
[0006] One end of the resistor R1 is connected to one end of the inductor L1, the other end of the inductor L1 is connected to the drain of the switch tube M1, and the other end of the resistor R1 is connected to the drain of the switch tube M2;
[0007] One end of the inductor L2 is connected to the source of the switch tube M1, and the other end of the inductor L2 is connected to the drain of the switch tube M2;
[0008] The drain of the switch tube M3 is connected to the source of the switch tube M2, the source of the switch tube M3 is grounded, one end of the inductor L3 is connected to the source of the switch tube M3, and the other end of the inductor L3 is connected to the drain of the switch tube M3;
[0009] The gate of the switching transistor M1 is connected to one end of the first resistor Rg, and the other end of the first resistor Rg is connected to the power supply. The gate of the switching transistor M2 is connected to one end of the second resistor Rg, and the other end of the second resistor Rg is connected to the power supply. The gate of the switching transistor M3 is connected to one end of the third resistor Rg, and the other end of the third resistor Rg is connected to the power supply.
[0010] In one embodiment, the inductance value of the inductor L2 is the same as that of the inductor L1.
[0011] In one embodiment, the present invention further provides a phase shifter, which includes the phase shifting circuit as described above.
[0012] The present invention proposes a phase shift circuit, which includes: a switching transistor M1, a switching transistor M2, a switching transistor M3, three resistors Rg, a resistor R1, an inductor L1, an inductor L2, and an inductor L3, wherein the source of the switching transistor M1 is connected to the radio frequency signal input end, and the drain of the switching transistor M1 is connected to the radio frequency signal output end; one end of the resistor R1 is connected to one end of the inductor L1, the other end of the inductor L1 is connected to the drain of the switching tube M1, and the other end of the resistor R1 is connected to the drain of the switching tube M2; one end of the inductor L2 is connected to the source of the switching tube M1, and the drain of the inductor L2 is connected to the drain of the switching tube M2. The other end is connected to the drain of the switch tube M2; the drain of the switch tube M3 is connected to the source of the switch tube M2, the source of the switch tube M3 is grounded, one end of the inductor L3 is connected to the source of the switch tube M3, and the other end of the inductor L3 is connected to the drain of the switch tube M3; the gate of the switch transistor M1 is connected to one end of the first resistor Rg, and the other end of the first resistor Rg is connected to the power supply, the gate of the switch transistor M2 is connected to one end of the second resistor Rg, and the other end of the second resistor Rg is connected to the power supply, the gate of the switch transistor M3 is connected to one end of the third resistor Rg, and the other end of the third resistor Rg is connected to the power supply. The structure of the phase shift circuit of the present invention has only one series switch, and the insertion loss is smaller, and the parasitic capacitance of the switch off state is part of the phase shift circuit, which can effectively suppress the influence of parasitic parameters on the performance of the entire phase shift circuit. The phase shift circuit structure using this circuit can achieve the effects of high precision, low insertion loss, and low amplitude error. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0014] in:
[0015] Figure 1 is a circuit structure schematic diagram of a phase shift circuit in one embodiment;
[0016] Figure 2 is a reference state equivalent circuit of a phase shift circuit in one embodiment;
[0017] Figure 3 is a phase-shifted state equivalent circuit of a phase-shifting circuit in one embodiment;
[0018] Figure 4 is an insertion loss diagram of a phase shift circuit in one embodiment;
[0019] Figure 5 is a return loss diagram of a phase shift circuit in one embodiment;
[0020] Figure 6 A schematic diagram of the phase shift degree and phase shift accuracy of a phase shift circuit in one embodiment;
[0021] Figure 7 FIG. 4 is a diagram showing an amplitude error of a phase shift circuit in one embodiment. DETAILED DESCRIPTION
[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of the present application; the terms used in the specification of the application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application; the terms "including" and "having" and any variations thereof in the specification and claims of the present application and the above-mentioned drawings are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of the present application or the above-mentioned drawings are used to distinguish different objects, not to describe a specific order.
[0023] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0025] See also Figure 1 As shown, Figure 1 A circuit structure diagram of a phase shift circuit provided in an embodiment of the present invention, the phase shift circuit comprises: a switching transistor M1, a switching transistor M2, a switching transistor M3, three resistors Rg, a resistor R1, an inductor L1, an inductor L2, and an inductor L3, wherein the source of the switching transistor M1 is connected to the RF signal input terminal, and the drain of the switching transistor M1 is connected to the RF signal output terminal;
[0026] One end of the resistor R1 is connected to one end of the inductor L1, the other end of the inductor L1 is connected to the drain of the switch tube M1, and the other end of the resistor R1 is connected to the drain of the switch tube M2;
[0027] One end of the inductor L2 is connected to the source of the switch tube M1, and the other end of the inductor L2 is connected to the drain of the switch tube M2;
[0028] The drain of the switch tube M3 is connected to the source of the switch tube M2, the source of the switch tube M3 is grounded, one end of the inductor L3 is connected to the source of the switch tube M3, and the other end of the inductor L3 is connected to the drain of the switch tube M3;
[0029] The gate of the switching transistor M1 is connected to one end of the first resistor Rg, and the other end of the first resistor Rg is connected to the power supply. The gate of the switching transistor M2 is connected to one end of the second resistor Rg, and the other end of the second resistor Rg is connected to the power supply. The gate of the switching transistor M3 is connected to one end of the third resistor Rg, and the other end of the third resistor Rg is connected to the power supply.
[0030] In one embodiment, the inductance of the inductor L2 is the same as that of the inductor L1. The present invention further provides a phase shifter, which includes the above-mentioned phase shifting circuit.
[0031] The present invention proposes a phase shift circuit with high precision, low insertion loss and low amplitude error. The structure of this phase shift circuit has only one series switch, with smaller insertion loss, and the parasitic capacitance of the switch off state is part of the phase shift circuit, which can effectively suppress the influence of parasitic parameters on the performance of the entire phase shift circuit. If a general phase shift circuit is used, the phase shift accuracy, insertion loss and amplitude error cannot be well taken into account. The phase shift circuit structure of this circuit is simple in design and can meet the required requirements, and is suitable for use in the case of a phase shift degree of ≤45°.
[0032] The working principle of the phase shift circuit proposed in the present invention is as follows: First, the external control voltage of the switch tubes M1 and M2 is the same, and the working state is the same, and the working state of M3 is opposite to that of M1 and M2. When the switch tubes M1 and M2 are closed, and M3 is disconnected, the circuit state is the reference state. At this time, the on-resistance of M1 determines the insertion loss of the phase shifter, and the inductor L3 and the cut-off capacitance of M3 produce parallel resonance. At this time, the phase difference and insertion loss of the signal transmission are very small, and the reference state is Figure 2 , Figure 2 The reference state equivalent circuit of the phase shift circuit described in the present invention is shown in Figure 2. Second, when the switch tubes M1 and M2 are disconnected and M3 is closed, it is in the phase shift state. At this time, L1, L2 and the cut-off capacitor of M2 form a T-type low-pass network to achieve phase lag and achieve the target phase shift value. Resistor R1 does not contribute to phase shifting, but by adjusting R1, the amplitude characteristics of the reference state and the phase shift state can be balanced, the parasitic amplitude modulation of the phase shifter can be reduced, and the amplitude error can be reduced. Figure 3 , Figure 3 This is the phase-shift state equivalent circuit of the phase-shift circuit described in the present invention.
[0033] refer to Figure 4 , Figure 4 is an insertion loss diagram of the phase shift circuit described in the present invention, Figure 4 Figure (a) shows the insertion loss of the reference state. Figure 4 Figure (b) shows the insertion loss in the phase-shifted state. Figure 4 It can be seen from the results that the phase shift circuit of the present invention has only one series switch, and the phase shift structure of the circuit can make the circuit have a smaller insertion loss.
[0034] refer to Figure 5 , Figure 5 is a return loss diagram of the phase shift circuit described in the present invention, Figure 5 Figure (a) shows the reference state input echo; Figure 5 Figure (b) shows the reference state output echo; Figure 5 Figure (c) shows the phase-shifted input echo; Figure 5 Figure (d) in the figure is the phase-shifted output echo. Figure 5 The results show that the phase shift circuit has good input and output echoes in both the reference state and the phase shift state.
[0035] refer to Figure 6 , Figure 6 is the phase shift degree and phase shift accuracy of the phase shift circuit described in the present invention, Figure 6 Figure (a) is a schematic diagram of the phase shift degree. Figure 6 Figure (b) is a schematic diagram of phase shift accuracy. The phase shift structure of this circuit can achieve precise phase shifting and high phase shift accuracy.
[0036] refer to Figure 7 , Figure 7 is the amplitude error diagram of the phase shift circuit of the present invention, according to Figure 7 It can be seen from the results that the phase shift circuit of the present invention can balance the amplitude characteristics of the reference state and the phase shift state, minimize the amplitude error, and reduce the impact of the parasitic amplitude modulation of the phase shifter.
[0037] The present invention proposes a phase shift circuit with high precision, low insertion loss and low amplitude error. The structure of this phase shift circuit has only one series switch, with smaller insertion loss, and the parasitic capacitance of the switch off state is part of the phase shift circuit, which can effectively suppress the influence of parasitic parameters on the performance of the entire phase shift circuit. If a general phase shift circuit is used, the phase shift accuracy, insertion loss and amplitude error cannot be well taken into account. The phase shift circuit structure of this circuit is simple in design and can meet the required requirements, and is suitable for use in the case of a phase shift degree of ≤45°.
[0038] The embodiments described above are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.
Claims
1. A phase shift circuit, characterized in that: The phase shift circuit includes: a switching transistor M1, a switching transistor M2, a switching transistor M3, three resistors Rg, a resistor R1, an inductor L1, an inductor L2, and an inductor L3, wherein the source of the switching transistor M1 is connected to the RF signal input terminal, and the drain of the switching transistor M1 is connected to the RF signal output terminal; One end of the resistor R1 is connected to one end of the inductor L1, the other end of the inductor L1 is connected to the drain of the switch tube M1, and the other end of the resistor R1 is connected to the drain of the switch tube M2; One end of the inductor L2 is connected to the source of the switch tube M1, and the other end of the inductor L2 is connected to the drain of the switch tube M2; The drain of the switch tube M3 is connected to the source of the switch tube M2, the source of the switch tube M3 is grounded, one end of the inductor L3 is connected to the source of the switch tube M3, and the other end of the inductor L3 is connected to the drain of the switch tube M3; The gate of the switching transistor M1 is connected to one end of the first resistor Rg, and the other end of the first resistor Rg is connected to the power supply. The gate of the switching transistor M2 is connected to one end of the second resistor Rg, and the other end of the second resistor Rg is connected to the power supply. The gate of the switching transistor M3 is connected to one end of the third resistor Rg, and the other end of the third resistor Rg is connected to the power supply.
2. The phase shift circuit according to claim 1, characterized in that: The inductance value of the inductor L2 is the same as that of the inductor L1.
3. A phase shifter, characterized in that: The phase shifter comprises the phase shifting circuit as claimed in any one of claims 1 to 2.