Wafer processing method and wafer processing device

Abstract

The invention provides a wafer processing method and a wafer processing device. The wafer processing method comprises the following steps: S1, coating a positive photoresist on the surface of a wafer; s2, performing exposure treatment on the positive photoresist on the surface of the wafer; and S3, developing the positive photoresist by adopting a negative developing solution so as to form patterned photoresist on other positions of the surface of the wafer while retaining the photoresist on the edge area of the surface of the wafer, so that a circle of photoresist on the edge area of the surface of the wafer is retained, and patterns on the other positions of the wafer can be developed at the same time. Wafer edge protection and central area pattern formation can be realized through one process flow, the process flow is shortened, the line width uniformity is improved, and the method is suitable for special processes such as a deep silicon hole etching process.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor integrated circuit manufacturing process, and in particular to a wafer processing method and a wafer processing device. Background Art

[0002] The semiconductor photolithography process is carried out in the order of photoresist coating, exposure, and development. The existing Photo Sensitivity Edge Scheme (PSES) process flow includes: photoresist coating on a coating and development device, exposure on a scanning exposure device, and development on a coating and development device.

[0003] In the prior art, the wafer processing method commonly used to achieve the photoresist retention at the wafer edge is: coating the surface of the wafer with positive photoresist in sequence, then exposing the entire surface of the wafer, and using positive developer to make a pattern in the center pattern area of ​​the wafer, and finally spin-coating a layer of photoresist on the edge of the wafer to form a protection for the wafer edge pattern. However, the edge coating in this wafer processing method has the problem of difficult control of photoresist thickness, daily thickness monitoring, and requires two entry into the machine to achieve wafer edge protection, which increases the process flow and requires the installation of additional machine pipelines and photoresist pumps.

[0004] Therefore, it is necessary to provide a novel wafer processing method and a wafer processing device to solve the above problems existing in the prior art. Summary of the invention

[0005] The object of the present invention is to provide a wafer processing method and a wafer processing device, which can realize the formation of wafer graphics and the retention of edge photoresist by one-time coating, exposure and development, shorten the process flow and improve the line width uniformity.

[0006] To achieve the above object, the wafer processing method of the present invention comprises the following steps:

[0007] S1. Coating a positive photoresist on the surface of the wafer;

[0008] S2, exposing the positive photoresist on the surface of the wafer;

[0009] S3. Using a negative developer to develop the positive photoresist, so as to form a patterned photoresist on the remaining positions of the wafer surface while retaining the photoresist on the edge area of ​​the wafer surface.

[0010] The beneficial effect of the wafer processing method of the present invention is: through S1, positive photoresist is coated on the surface of the wafer; S2, the positive photoresist on the surface of the wafer is exposed; S3, the positive photoresist is developed with a negative developer to form a patterned photoresist on the remaining positions of the wafer surface while retaining the photoresist in the edge area of ​​the wafer surface, so that the photoresist in a circle of the edge area of ​​the wafer surface is retained, and the pattern of the remaining positions of the wafer can be developed, that is, the wafer edge protection and the center area pattern formation can be achieved through a single process flow, the process flow is shortened, the line width uniformity is improved, and it is suitable for special processes, such as deep silicon hole etching process.

[0011] Preferably, the step S2 further comprises the steps of:

[0012] S21, dividing the surface of the wafer into a central area and an edge area, wherein the edge area surrounds the central area;

[0013] S22, performing edge exposure processing on the photoresist in the edge area;

[0014] S23, using a mask to perform pattern exposure processing on the photoresist in the central area. The beneficial effect is that: if the central area and the edge area are exposed at the same time, there will be a problem that the edge area is not fully exposed, which affects the retention of the photoresist in the edge area. The present invention can better retain the edge photoresist by exposing the photoresist in the edge area separately in step S22, and make the photoresist in the edge area more complete and uniform.

[0015] Preferably, before step S1, the step S0 is also included: S0, providing a glue coating and developing machine, the glue coating and developing machine includes a wafer edge exposure unit, the wafer edge exposure unit includes a light source, a central light shielding part and an edge exposure part, the edge exposure part is arranged around the central light shielding part, the light source is arranged on the central axis of the central light shielding part, the central light shielding part includes a circular fixed part and an annular replacement part, the annular replacement part is detachably mounted on the circular fixed part, and the annular replacement part includes N sub-annular replacement parts, N is a positive integer greater than or equal to 1, and the N sub-annular replacement parts have different widths. Its beneficial effect is that the area of ​​the central light shielding part is adjusted by selecting the sub-annular replacement parts of different widths, that is, the adjustment of the edge area width is achieved, so that the edge area width can be freely adjusted according to needs, and it is suitable for edge protection of wafers of various widths.

[0016] Preferably, the step S22 further comprises the steps of:

[0017] S221, adjusting the area of ​​the central light shielding portion by selecting the sub-annular replacement portions with different widths, so that the central light shielding portion shields the central area;

[0018] S222, using the light source to perform edge exposure processing on the photoresist in the edge area. The beneficial effect is that compared with the prior art in which light is projected onto the edge area of ​​a portion of the wafer and then the optical fiber is rotated around the wafer to perform exposure processing on the edge area of ​​the wafer in sequence, the present invention shields the central area and then uses the light source to synchronously perform edge exposure processing on the photoresist in all the edge areas of the wafer, which greatly reduces the time for edge area exposure processing and improves wafer processing efficiency.

[0019] Preferably, the step S221 further comprises: setting an alignment mark for marking the edge area in the edge area; and adjusting the area of ​​the central light shielding portion by selecting the sub-annular replacement portions of different widths according to the alignment mark, so that the edge of the central light shielding portion is aligned with the boundary between the central area and the edge area. The beneficial effect is that the central light shielding portion can completely block the central area, so that the photoresist retention in the edge area can be more complete and uniform.

[0020] The wafer processing device of the present invention is used to execute the wafer processing method; the wafer processing device includes a coating and developing machine and an exposure machine, the coating and developing machine includes a coating unit and a developing unit, and wafer transmission is achieved between the coating unit and the exposure machine, and between the exposure machine and the developing unit through mechanical arms respectively; the coating unit is used to coat positive photoresist on the surface of the wafer; the developing unit is used to spray negative developer to develop the positive photoresist; the exposure machine is used to expose the positive photoresist on the surface of the wafer.

[0021] The beneficial effects of the wafer processing device of the present invention are as follows: the wafer processing device includes a coating developer and an exposure machine, the coating developer includes a coating unit and a developing unit, and wafer transmission is achieved between the coating unit and the exposure machine, and between the exposure machine and the developing unit through mechanical arms; the coating unit is used to coat positive photoresist on the surface of the wafer; the developing unit is used to spray negative developer to develop the positive photoresist; the exposure machine is used to expose the positive photoresist on the surface of the wafer, thereby retaining the photoresist in the edge area of ​​the wafer surface and forming patterned photoresist on the remaining positions of the wafer surface, and wafer edge protection and center area pattern formation can be achieved through a one-time process flow without setting up additional machine pipelines. The present invention can save pipelines and photoresist pumps, and the obtained product has high resolution and good CD uniformity. The device is suitable for making small-sized graphics and is suitable for special processes such as etching preparation of deep silicon holes.

[0022] Preferably, the coating and developing machine further comprises a wafer edge exposure unit, wherein the wafer edge exposure unit, the coating unit and the exposure machine are respectively connected by a mechanical arm to realize wafer transmission; the wafer edge exposure unit is used to perform edge exposure processing on the photoresist in the edge area. The beneficial effect is that the edge photoresist can be better retained by exposing the photoresist in the edge area separately through the wafer edge exposure unit, and the photoresist in the edge area can be retained more completely and evenly.

[0023] Preferably, the wafer edge exposure unit includes a light source, a central light-shielding portion and an edge exposure portion, the edge exposure portion is arranged around the central light-shielding portion, the light source is arranged on the central axis of the central light-shielding portion, the central light-shielding portion includes a circular fixed portion and an annular replacement portion, the annular replacement portion can be detachably installed on the circular fixed portion, and the annular replacement portion includes N sub-annular replacement portions, wherein N is a positive integer greater than or equal to 1, and the N sub-annular replacement portions have different widths. Its beneficial effects are: by selecting the sub-annular replacement parts of different widths to adjust the area of ​​the central shading part, the adjustment of the width of the edge area is achieved, so that the width of the edge area can be freely adjusted according to needs, and it is suitable for edge protection of wafers of various widths; and compared with the prior art in which light is projected to the edge area of ​​a part of the wafer, and then the optical fiber is circled around the wafer to expose the edge area of ​​the wafer in sequence, the present invention uses a central shading part to block the central area, and then uses a light source to synchronously expose the photoresist of the entire edge area of ​​the wafer, which greatly reduces the exposure time of the edge area and improves the wafer processing efficiency.

[0024] Preferably, the Nth sub-annular replacement part is detachably mounted on the circular fixed part, and the inner diameter of the Nth sub-annular replacement part is smaller than the radius of the circular fixed part, and the outer diameters of the first sub-annular replacement part to the Nth sub-annular replacement part increase successively. Its beneficial effects are: the sub-annular replacement part with an adaptive width can be selected for installation according to the width of the wafer edge protection, and the replacement of the annular replacement part is simple and convenient, and the operation only needs one time; the inner diameter of the Nth sub-annular replacement part is smaller than the radius of the circular fixed part to ensure that the central area is completely blocked, avoiding that the central area is also exposed when the light source exposes the edge exposure part, and ensuring the integrity and accuracy of the pattern in the central area.

[0025] Preferably, the action surface of the circular fixing part is provided with any one of a boss and a groove matched with the boss, and the action surface of the sub-annular replacement part opposite to the circular fixing part is provided with the other of the boss and the groove, and the circular fixing part and the sub-annular replacement part are detachably installed by the boss being snapped into the groove. The beneficial effects are: simple structure, low investment cost, convenient installation and disassembly, the boss snapping into the groove can make the installation more stable and firm, and can effectively avoid misoperation to change the width of the adjusted edge area.

[0026] Preferably, the first sub-annular replacement part is detachably mounted on the circular fixed part, the Nth sub-annular replacement part is detachably mounted on the N-1th sub-annular replacement part, and the inner diameter of the first sub-annular replacement part is smaller than the radius of the circular fixed part, the inner diameter of the Nth sub-annular replacement part is smaller than the outer diameter of the N-1th sub-annular replacement part, and the outer diameters increase successively from the first sub-annular replacement part to the Nth sub-annular replacement part. Its beneficial effects are: according to the width of the wafer edge protection, a number of sub-annular replacement parts of adapted width can be selected for assembly, thereby reducing the number of spare sub-annular replacement parts and saving cost investment; the inner diameter of the first sub-annular replacement part is smaller than the radius of the circular fixed part, and the inner diameter of the Nth sub-annular replacement part is smaller than the outer diameter of the N-1th sub-annular replacement part, so as to ensure that the central area is completely shielded, thereby avoiding that the central area is also exposed when the light source exposes the edge exposure part, thereby ensuring the integrity and accuracy of the pattern in the central area.

[0027] Preferably, the action surface of the circular fixing part and one action surface of the sub-annular replacement part are provided with any one of a boss and a groove matched with the boss, and the other action surface of the sub-annular replacement part is provided with the other of the boss and the groove, and the circular fixing part and the first sub-annular replacement part are detachably installed by snapping the boss into the groove, and the Nth sub-annular replacement part and the N-1th sub-annular replacement part are detachably installed by snapping the boss into the groove. Its beneficial effects are: simple structure, low investment cost, and convenient installation and disassembly, the boss snapping into the groove can make the installation more stable and firm, and can effectively avoid misoperation to change the width of the adjusted edge area.

[0028] Preferably, the bosses and the grooves are provided in plurality, the bosses and the grooves are arranged in one-to-one correspondence, and the bosses and the grooves are evenly spaced and circumferentially arranged on the action surface. The beneficial effect is that the installation is more stable and firm, and the width of the adjusted edge area can be effectively avoided from being changed due to misoperation. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of a process flow of a wafer processing method according to an embodiment of the present invention;

[0030] Figure 2 A schematic diagram of a wafer processing device according to an embodiment of the present invention;

[0031] Figure 3 It is a schematic structural diagram of the central light shielding portion of the first embodiment of the present invention;

[0032] Figure 4 FIG. 4 is a schematic structural diagram of a central light shielding portion according to a second embodiment of the present invention. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0034] In order to overcome the problems existing in the prior art, the embodiments of the present invention provide a wafer processing method and a wafer processing device, which can realize the formation of wafer graphics and edge photoresist retention through one-time coating, exposure and development, shortening the process flow and improving line width uniformity.

[0035] Figure 1 Schematic diagram of the process of a wafer processing method according to an embodiment of the present invention.

[0036] In some embodiments of the present invention, reference Figure 1 , the wafer processing method comprises the following steps:

[0037] S1. Coating a positive photoresist on the surface of the wafer;

[0038] S2, exposing the positive photoresist on the surface of the wafer;

[0039] S3. Using a negative developer to develop the positive photoresist, so as to form a patterned photoresist on the remaining positions of the wafer surface while retaining the photoresist on the edge area of ​​the wafer surface.

[0040] Specifically, through S1, coating a positive photoresist on the surface of the wafer; S2, exposing the positive photoresist on the surface of the wafer; S3, developing the positive photoresist with a negative developer, so as to form a patterned photoresist on the rest of the surface of the wafer while retaining the photoresist in the edge area of ​​the wafer surface, so that the photoresist in a circle of the edge area of ​​the wafer surface is retained, and the pattern of the rest of the wafer can be developed, that is, the edge protection of the wafer and the formation of the pattern in the center area can be achieved through one process flow, the process flow is shortened, the line width uniformity is improved, and it is suitable for special processes, such as deep silicon hole etching process. Compared with the prior art which uses positive photoresist and positive developer to retain the photoresist at the edge of the wafer and finally spin-coats a layer of photoresist on the edge of the wafer, the present invention adopts the technology of positive photoresist plus negative developer, and can realize wafer edge protection and center area pattern formation through one process flow, shortening the process flow, and the process is simple. The thickness of the edge photoresist is easy to control, and there is no need to set up additional machine pipelines. The present invention can save pipelines and photoresist pumps.

[0041] In some embodiments of the present invention, the step S2 further comprises the steps of:

[0042] S21, dividing the surface of the wafer into a central area and an edge area, wherein the edge area surrounds the central area;

[0043] S22, performing edge exposure processing on the photoresist in the edge area;

[0044] S23, using a mask to perform pattern exposure processing on the photoresist in the central area. If the central area and the edge area are exposed at the same time, there will be a problem that the edge area is not fully exposed, which affects the retention of the photoresist in the edge area. The present invention can better retain the edge photoresist by exposing the photoresist in the edge area separately in step S22, and make the photoresist in the edge area more complete and uniform.

[0045] In some embodiments of the present invention, the step S1 is preceded by the following steps: S0, providing a glue coating and developing machine, the glue coating and developing machine comprising a wafer edge exposure unit, the wafer edge exposure unit comprising a light source, a central light shielding portion and an edge exposure portion, the edge exposure portion is arranged to surround the central light shielding portion, the light source is arranged on the central axis of the wafer edge exposure unit, the central light shielding portion comprises a circular fixed portion and an annular replacement portion, the annular replacement portion is detachably mounted on the circular fixed portion, and the annular replacement portion comprises N sub-annular replacement portions, N is a positive integer greater than or equal to 1, and the N sub-annular replacement portions have different widths. By selecting the sub-annular replacement portions of different widths to adjust the area of ​​the central light shielding portion, the adjustment of the edge area width is achieved, so that the edge area width can be freely adjusted according to demand, and is suitable for edge protection of wafers of various widths.

[0046] In some embodiments of the present invention, the central area is a circular structure, and the edge area is a circular ring structure.

[0047] In the present invention, the width of the edge region is equal to the difference between the outer diameter of the edge region and the inner diameter of the edge region. The width of the sub-annular replacement portion is equal to the difference between the outer diameter of the sub-annular replacement portion and the inner diameter of the sub-annular replacement portion.

[0048] In some embodiments of the present invention, step S22 further includes the steps of:

[0049] S221, adjusting the area of ​​the central light shielding portion by selecting the sub-annular replacement portions with different widths, so that the central light shielding portion shields the central area;

[0050] S222, using the light source to perform edge exposure processing on the photoresist in the edge area. Compared with the prior art in which light is projected onto the edge area of ​​a portion of the wafer and then the optical fiber is rotated around the wafer to perform exposure processing on the edge area of ​​the wafer step by step, the present invention shields the central area and then uses the light source to synchronously perform edge exposure processing on the photoresist in all the edge areas of the wafer, which greatly reduces the time for edge area exposure processing and improves wafer processing efficiency.

[0051] In some embodiments of the present invention, the step S221 further includes: setting an alignment mark for marking the edge area in the edge area; and adjusting the area of ​​the central light shielding portion by selecting the sub-annular replacement portions of different widths according to the alignment mark, so that the edge of the central light shielding portion is aligned with the boundary between the central area and the edge area, so that the central light shielding portion can completely block the central area, thereby making the photoresist retention in the edge area more complete and uniform.

[0052] In some embodiments of the present invention, the wafer processing device is used to perform the wafer processing method. The wafer processing device includes a coating and developing machine and an exposure machine, the coating and developing machine includes a coating unit and a developing unit, the coating unit and the exposure machine, and the exposure machine and the developing unit are respectively used to realize wafer transmission through a robotic arm; the coating unit is used to coat positive photoresist on the surface of the wafer; the developing unit is used to spray negative developer to develop the positive photoresist; the exposure machine is used to expose the positive photoresist on the surface of the wafer.

[0053] Specifically, the wafer processing device includes a coating developer and an exposure machine, the coating developer includes a coating unit and a developing unit, and wafer transfer is achieved between the coating unit and the exposure machine, and between the exposure machine and the developing unit through mechanical arms; the coating unit is used to coat positive photoresist on the surface of the wafer; the developing unit is used to spray negative developer to develop the positive photoresist; the exposure machine is used to expose the positive photoresist on the surface of the wafer, thereby retaining the photoresist in the edge area of ​​the wafer surface and forming patterned photoresist on the remaining positions of the wafer surface. Wafer edge protection and center area pattern formation can be achieved through a one-time process flow without setting up additional machine pipelines. The present invention can save pipelines and photoresist pumps, and the obtained product has high resolution and good CD uniformity. The device is suitable for making small-sized graphics and is suitable for special processes such as etching preparation of deep silicon holes.

[0054] In some embodiments of the present invention, the coating and developing machine further comprises a wafer edge exposure unit, wherein the wafer edge exposure unit, the coating unit and the exposure machine are respectively connected by a mechanical arm to realize wafer transmission; the wafer edge exposure unit is used to perform edge exposure processing on the photoresist in the edge area. By separately exposing the photoresist in the edge area by the wafer edge exposure unit, the edge photoresist can be better retained, and the photoresist in the edge area can be retained more completely and evenly.

[0055] Figure 2 FIG. 4 is a schematic diagram of a wafer processing device according to an embodiment of the present invention.

[0056] In some specific embodiments of the present invention, reference Figure 2 The wafer processing device includes a glue coating and developing machine 100 and an exposure machine 200. The glue coating and developing machine 100 includes a glue coating unit 110, a wafer edge exposure unit 120 and a developing unit 130. The glue coating unit 110 and the wafer edge exposure unit 120, the wafer edge exposure unit 120 and the exposure machine 200, and the exposure machine 200 and the developing unit 130 are respectively transferred by robotic arms (not shown in the figure).

[0057] In some embodiments of the present invention, the wafer edge exposure unit includes a light source, a central light shielding portion and an edge exposure portion, the edge exposure portion is arranged around the central light shielding portion, the light source is arranged on the central axis of the central light shielding portion, the central light shielding portion includes a circular fixed portion and an annular replacement portion, the annular replacement portion is detachably mounted on the circular fixed portion, and the annular replacement portion includes N sub-annular replacement portions, wherein N is a positive integer greater than or equal to 1, and the N sub-annular replacement portions have different widths. By selecting the sub-annular replacement portions of different widths to adjust the area of ​​the central light shielding portion, the adjustment of the edge area width is achieved, so that the edge area width can be freely adjusted according to demand, and it is suitable for wafer edge protection of various different widths; and compared with the prior art in which light is projected to the edge area of ​​a part of the wafer, and then the optical fiber is rotated around the wafer to perform exposure processing on the wafer edge area in sequence, the present invention uses the central light shielding portion to shield the central area, and then uses the light source to synchronously perform edge exposure processing on the photoresist of all the edge areas of the wafer, which greatly reduces the time of edge area exposure processing and improves wafer processing efficiency.

[0058] Specifically, when the area of ​​the central shading portion becomes larger, that is, the radius of the central shading portion becomes larger, the width of the edge area decreases; when the area of ​​the central shading portion becomes smaller, that is, the radius of the central shading portion becomes smaller, the width of the edge area increases.

[0059] In some embodiments of the present invention, the Nth sub-annular replacement part is detachably mounted on the circular fixed part, and the inner diameter of the Nth sub-annular replacement part is smaller than the radius of the circular fixed part, and the outer diameters of the first sub-annular replacement part to the Nth sub-annular replacement part increase successively. The sub-annular replacement part with an adaptive width can be selected for installation according to the width of the wafer edge protection, and the replacement of the annular replacement part is simple and convenient, and the operation only needs one time; the inner diameter of the Nth sub-annular replacement part is smaller than the radius of the circular fixed part to ensure that the central area is completely blocked, avoiding that the central area is also exposed when the light source exposes the edge exposure part, and ensuring the integrity and accuracy of the pattern in the central area.

[0060] In some embodiments of the present invention, the action surface of the circular fixing part is provided with either a boss or a groove matched with the boss, and the action surface of the sub-annular replacement part opposite to the circular fixing part is provided with the other of the boss and the groove, and the circular fixing part and the sub-annular replacement part are detachably installed by the boss being snapped into the groove. The structure is simple, the investment cost is low, and it is convenient to install and disassemble. The boss snapping into the groove can make the installation more stable and firm, and can effectively avoid the change of the width of the adjusted edge area due to misoperation.

[0061] In some embodiments of the present invention, the bosses and the grooves are provided in plurality, the bosses and the grooves are arranged in one-to-one correspondence, and the bosses and the grooves are evenly spaced and circumferentially arranged on the action surface, so that the installation is more stable and firm, and the width of the adjusted edge area can be effectively avoided from being changed due to misoperation.

[0062] Figure 3 FIG. 1 is a schematic structural diagram of a central light shielding portion according to a first embodiment of the present invention.

[0063] In some specific embodiments of the present invention, reference Figure 3 , the central light shielding portion includes a circular fixed portion 1 and a sub-annular replacement portion 2, and the sub-annular replacement portion 2 can be detachably installed on the circular fixed portion 1. The inner diameter of the sub-annular replacement portion 2 is smaller than the radius of the circular fixed portion 1, so that at least part of the sub-annular replacement portion 2 covers the circular fixed portion 1, and the part of the sub-annular replacement portion 2 covering the circular fixed portion 1 is the overlapping portion 3, which ensures that the central area is completely blocked, avoids the central area from being exposed when the light source exposes the edge exposure portion, and ensures the integrity and accuracy of the pattern in the central area. Among them, the radius of the central light shielding portion is equal to the sum of the radius of the circular fixed portion 1 and the width of the sub-annular replacement portion 2.

[0064] In some specific embodiments of the present invention, the action surface of the circular fixing portion 1 is provided with a plurality of bosses, the plurality of bosses are arranged close to the outer circumference of the circular fixing portion 1, and the plurality of bosses are equidistantly spaced and circumferentially arranged on the action surface of the circular fixing portion 1. The action surface of the sub-annular replacement portion 2 opposite to the circular fixing portion 1 is provided with a plurality of grooves, the plurality of grooves are arranged close to the inner circumference of the sub-annular replacement portion 2, and the plurality of grooves are equidistantly spaced and circumferentially arranged on the action surface of the sub-annular replacement portion 2 opposite to the circular fixing portion 1, and the plurality of grooves are arranged in a one-to-one correspondence with the plurality of bosses.

[0065] In some other specific embodiments of the present invention, the action surface of the circular fixing portion 1 is provided with a plurality of grooves, the plurality of grooves are arranged close to the outer circumference of the circular fixing portion 1, and the plurality of grooves are equidistantly spaced and circumferentially arranged on the action surface of the circular fixing portion 1. The action surface of the sub-annular replacement portion 2 opposite to the circular fixing portion 1 is provided with a plurality of bosses, the plurality of bosses are arranged close to the inner circumference of the sub-annular replacement portion 2, and the plurality of bosses are equidistantly spaced and circumferentially arranged on the action surface of the sub-annular replacement portion 2 opposite to the circular fixing portion 1, and the plurality of grooves are arranged in one-to-one correspondence with the plurality of bosses.

[0066] In some other embodiments of the present invention, the first sub-annular replacement part is detachably mounted on the circular fixed part, the Nth sub-annular replacement part is detachably mounted on the N-1th sub-annular replacement part, and the inner diameter of the first sub-annular replacement part is smaller than the radius of the circular fixed part, the inner diameter of the Nth sub-annular replacement part is smaller than the outer diameter of the N-1th sub-annular replacement part, and the outer diameters increase successively from the first sub-annular replacement part to the Nth sub-annular replacement part. According to the width of the wafer edge protection, several sub-annular replacement parts of adapted width can be selected for assembly, thereby reducing the number of spare sub-annular replacement parts and saving cost investment; the inner diameter of the first sub-annular replacement part is smaller than the radius of the circular fixed part, and the inner diameter of the Nth sub-annular replacement part is smaller than the outer diameter of the N-1th sub-annular replacement part, so as to ensure that the central area is completely shielded, and the central area is prevented from being exposed when the light source exposes the edge exposure part, thereby ensuring the integrity and accuracy of the pattern in the central area.

[0067] In some embodiments of the present invention, the action surface of the circular fixed part and one action surface of the sub-annular replacement part are provided with any one of a boss and a groove matched with the boss, and the other action surface of the sub-annular replacement part is provided with the other of the boss and the groove, and the circular fixed part and the first sub-annular replacement part are detachably installed by snapping the boss into the groove, and the Nth sub-annular replacement part and the N-1th sub-annular replacement part are detachably installed by snapping the boss into the groove. The structure is simple, the investment cost is low, and it is convenient to install and disassemble. The boss snapping into the groove can make the installation more stable and firm, and can effectively avoid misoperation and change the width of the adjusted edge area.

[0068] Figure 4 FIG. 4 is a schematic structural diagram of a central light shielding portion according to a second embodiment of the present invention.

[0069] In some specific embodiments of the present invention, reference Figure 4The sub-annular replacement part 2 is provided with two parts, namely, a first sub-annular replacement part 21 and a second sub-annular replacement part 22. The first sub-annular replacement part 21 can be detachably mounted on the circular fixed part 1, and the second sub-annular replacement part 22 can be detachably mounted on the first sub-annular replacement part 21. The outer diameter of the first sub-annular replacement part 21 is smaller than the outer diameter of the second sub-annular replacement part 22. The inner diameter of the first sub-annular replacement part 21 is smaller than the radius of the circular fixed part 1, so that at least part of the first sub-annular replacement part 21 covers the circular fixed part 1, and the part of the first sub-annular replacement part 21 covering the circular fixed part 1 is the first overlapping part 31; the inner diameter of the second sub-annular replacement part 22 is smaller than the outer diameter of the first sub-annular replacement part 21, so that at least part of the second sub-annular replacement part 22 covers the first sub-annular replacement part 21, and the part of the second sub-annular replacement part 22 covering the first sub-annular replacement part 21 is the second overlapping part 32; in this way, the central area is completely shielded, and the central area is prevented from being exposed when the light source exposes the edge exposure part, thereby ensuring the integrity and accuracy of the pattern in the central area. The radius of the central light shielding portion is equal to the sum of the radius of the circular fixing portion 1 , the width of the first sub-annular replacement portion 21 , and the width of the second sub-annular replacement portion 22 .

[0070] In some specific embodiments of the present invention, the action surface of the circular fixing portion 1 is provided with a plurality of first bosses, and the plurality of first bosses are arranged close to the outer circumference of the circular fixing portion 1, and the plurality of first bosses are equidistant and circumferentially arranged on the action surface of the circular fixing portion 1. The action surface of the first sub-annular replacement portion 21 opposite to the circular fixing portion 1 is provided with a plurality of first grooves, and the other action surface of the first sub-annular replacement portion 21 is provided with a plurality of second bosses, and the plurality of first grooves are arranged close to the inner circumference of the first sub-annular replacement portion 21, and the plurality of second bosses are arranged close to the outer circumference of the first sub-annular replacement portion 21, the plurality of first grooves are equidistant and circumferentially arranged on the action surface of the first sub-annular replacement portion 21 opposite to the circular fixing portion 1, the plurality of first grooves are arranged one-to-one with the plurality of first bosses, and the plurality of second bosses are equidistant and circumferentially arranged on the other action surface of the first sub-annular replacement portion 21. The acting surface of the second sub-annular replacement part 22 opposite to the first sub-annular replacement part 21 is provided with a plurality of second grooves, and the other acting surface of the second sub-annular replacement part 22 is provided with a plurality of third bosses, and the plurality of second grooves are arranged close to the inner circumference of the second sub-annular replacement part 22, and the plurality of third bosses are arranged close to the outer circumference of the second sub-annular replacement part 22, the plurality of second grooves are equidistant and circumferentially arranged on the acting surface of the second sub-annular replacement part 22 opposite to the first sub-annular replacement part 21, the plurality of second grooves are arranged one-to-one with the plurality of second bosses, and the plurality of third bosses are equidistant and circumferentially arranged on the other acting surface of the second sub-annular replacement part 22.

[0071] In some other specific embodiments of the present invention, the action surface of the circular fixing portion 1 is provided with a plurality of first grooves, and the plurality of first grooves are arranged close to the outer circumference of the circular fixing portion 1, and the plurality of first grooves are equidistant and circumferentially arranged on the action surface of the circular fixing portion 1. The action surface of the first sub-annular replacement portion 21 opposite to the circular fixing portion 1 is provided with a plurality of first bosses, and the other action surface of the first sub-annular replacement portion 21 is provided with a plurality of second grooves, and the plurality of first bosses are arranged close to the inner circumference of the first sub-annular replacement portion 21, and the plurality of second grooves are arranged close to the outer circumference of the first sub-annular replacement portion 21, and the plurality of first bosses are equidistant and circumferentially arranged on the action surface of the first sub-annular replacement portion 21 opposite to the circular fixing portion 1, the plurality of first grooves are arranged one-to-one with the plurality of first bosses, and the plurality of second grooves are equidistant and circumferentially arranged on the other action surface of the first sub-annular replacement portion 21. The acting surface of the second sub-annular replacement part 22 opposite to the first sub-annular replacement part 21 is provided with a plurality of second bosses, and the other acting surface of the second sub-annular replacement part 22 is provided with a plurality of third grooves, and the plurality of second bosses are arranged close to the inner circumference of the second sub-annular replacement part 22, and the plurality of third grooves are arranged close to the outer circumference of the second sub-annular replacement part 22, the plurality of second bosses are equidistant and circumferentially arranged on the acting surface of the second sub-annular replacement part 22 opposite to the first sub-annular replacement part 21, the plurality of second grooves are arranged one-to-one with the plurality of second bosses, and the plurality of third grooves are equidistant and circumferentially arranged on the other acting surface of the second sub-annular replacement part 22.

[0072] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A wafer processing method, characterized in that: The following steps are involved: S1. Coating a positive photoresist on the surface of the wafer; S2, exposing the positive photoresist on the surface of the wafer; S3. Using a negative developer to develop the positive photoresist, so as to form a patterned photoresist on the remaining positions of the wafer surface while retaining the photoresist on the edge area of ​​the wafer surface.

2. The wafer processing method according to claim 1, characterized in that: The step S2 further comprises the steps of: S21, dividing the surface of the wafer into a central area and an edge area, wherein the edge area surrounds the central area; S22, performing edge exposure processing on the photoresist in the edge area; S23, performing pattern exposure processing on the photoresist in the central area using a mask.

3. The wafer processing method according to claim 2, characterized in that: The step S1 also includes the following steps: S0. Provide a glue coating and developing machine, the glue coating and developing machine includes a wafer edge exposure unit, the wafer edge exposure unit includes a light source, a central light shielding part and an edge exposure part, the edge exposure part is arranged around the central light shielding part, the light source is arranged on the central axis of the central light shielding part, the central light shielding part includes a circular fixed part and an annular replacement part, the annular replacement part can be detachably installed on the circular fixed part, and the annular replacement part includes N sub-annular replacement parts, N is a positive integer greater than or equal to 1, and the N sub-annular replacement parts have different widths.

4. The wafer processing method according to claim 3, characterized in that: The step S22 further comprises the steps of: S221, adjusting the area of ​​the central light shielding portion by selecting the sub-annular replacement portions with different widths, so that the central light shielding portion shields the central area; S222, using the light source to perform edge exposure processing on the photoresist in the edge area.

5. The wafer processing method according to claim 4, characterized in that: The step S221 further includes: Providing an alignment mark in the edge region for marking the edge region; According to the alignment mark, the area of ​​the central light shielding portion is adjusted by selecting the sub-annular replacement portions with different widths, so that the edge of the central light shielding portion is aligned with the boundary between the central area and the edge area.

6. A wafer processing device, characterized in that: Used to perform the wafer processing method according to any one of claims 1 to 5; the wafer processing device comprises a coating and developing machine and an exposure machine, the coating and developing machine comprises a coating unit and a developing unit, and wafers are transferred between the coating unit and the exposure machine and between the exposure machine and the developing unit through mechanical arms respectively; the coating unit is used to coat positive photoresist on the surface of the wafer; the developing unit is used to spray negative developer to develop the positive photoresist; The exposure machine is used to perform exposure processing on the positive photoresist on the surface of the wafer.

7. The wafer processing device according to claim 6, characterized in that: The coating and developing machine also includes a wafer edge exposure unit, and the wafer edge exposure unit, the coating unit and the exposure machine are respectively connected to realize wafer transmission through a robotic arm; the wafer edge exposure unit is used to perform edge exposure processing on the photoresist in the edge area.

8. The wafer processing device according to claim 7, characterized in that: The wafer edge exposure unit includes a light source, a central light-shielding portion and an edge exposure portion, wherein the edge exposure portion is arranged around the central light-shielding portion, the light source is arranged on the central axis of the central light-shielding portion, the central light-shielding portion includes a circular fixed portion and an annular replacement portion, the annular replacement portion is detachably mounted on the circular fixed portion, and the annular replacement portion includes N sub-annular replacement portions, wherein N is a positive integer greater than or equal to 1, and the N sub-annular replacement portions have different widths.

9. The wafer processing device according to claim 8, characterized in that: The Nth sub-annular replacement part can be detachably mounted on the circular fixed part, and the inner diameter of the Nth sub-annular replacement part is smaller than the radius of the circular fixed part, and the outer diameter increases successively from the first sub-annular replacement part to the Nth sub-annular replacement part.

10. The wafer processing device according to claim 9, characterized in that: The active surface of the circular fixing part is provided with either a boss or a groove matched with the boss, and the active surface of the sub-annular replacement part opposite to the circular fixing part is provided with the other of the boss and the groove. The circular fixing part and the sub-annular replacement part are detachably installed by snapping the boss into the groove.

11. The wafer processing device according to claim 8, characterized in that: The first sub-annular replacement part is detachably mounted on the circular fixed part, the Nth sub-annular replacement part is detachably mounted on the N-1th sub-annular replacement part, and the inner diameter of the first sub-annular replacement part is smaller than the radius of the circular fixed part, the inner diameter of the Nth sub-annular replacement part is smaller than the outer diameter of the N-1th sub-annular replacement part, and the outer diameters increase successively from the first sub-annular replacement part to the Nth sub-annular replacement part.

12. The wafer processing device according to claim 11, characterized in that: The active surface of the circular fixing part and one active surface of the sub-annular replacement part are provided with any one of a boss and a groove matched with the boss, and the other active surface of the sub-annular replacement part is provided with the other of the boss and the groove. The circular fixing part and the first sub-annular replacement part are detachably installed by the boss being snapped into the groove, and the Nth sub-annular replacement part and the N-1th sub-annular replacement part are detachably installed by the boss being snapped into the groove.

13. The wafer processing device according to claim 10 or 12, characterized in that: There are a plurality of bosses and a plurality of grooves, respectively, and the bosses and the grooves are arranged in one-to-one correspondence, and the bosses and the grooves are evenly spaced and circumferentially arranged on the action surface.

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