Glass substrate and manufacturing method thereof

Abstract

The invention discloses a glass substrate and a manufacturing method thereof, and relates to the technical field of semiconductor packaging. The manufacturing method of the glass substrate comprises the following steps: opening a hole in a glass core plate, forming a first seed layer, forming a first mask, metalizing a through hole, removing the first mask and the first seed layer covered by the first mask, plugging the hole and forming a first resin layer, forming a second seed layer, forming a second mask, and forming an inner circuit layer, forming a through hole in the second resin layer on the first surface and the second surface; forming a third seed layer; forming a third mask; forming a circuit layer; and repeating the steps from forming the second resin layer to removing the third mask and the third seed layer covered by the third mask at least once, manufacturing the solder mask and performing ball planting so as to reduce the warping of the substrate and improve the reliability of the substrate.

Description

Technical Field

[0001] The present application relates to the field of semiconductor packaging technology, and in particular to a glass substrate and a method for manufacturing the same. Background Art

[0002] In the prior art, organic substrates are generally used to realize interconnection between packaged chips and devices and PCBs, so as to support and protect the chips while providing a data exchange path for the chips.

[0003] With the rapid development of network and information technology, AI, 5G, cloud computing, and autonomous driving, people's demand for data has exploded, and the requirements for chips for data processing, data transmission, and data storage have continued to increase. In order to meet the demand for chips for massive data processing, the current development of global integrated circuit technology and improve data processing capabilities mainly follow two paths: one is to follow Moore's Law and use advanced technology nodes to continuously advance integrated circuits toward large-size SOC (System on Chip); the other technical path is to use three-dimensional heterogeneous integration to package chips with different IPs, different technology nodes, and different materials in one package through high-density three-dimensional heterogeneous integration technology to improve the data processing capabilities of a single package. The larger the SOC size, the more chips are integrated in a single package, and the larger the substrate size required. As the substrate size increases, the substrate warpage increases significantly, which has an increasing impact on the packaging process and the reliability of the packaged device. Summary of the invention

[0004] The purpose of the present application is to provide a glass substrate and a method for manufacturing the same, so as to reduce the warping of the substrate while improving the bonding force between the inner circuit layer and the glass core board, thereby improving the reliability of the substrate.

[0005] In order to achieve the above objectives, this application provides the following technical solutions:

[0006] A glass substrate, comprising:

[0007] A glass core board having a plurality of through holes, the glass core board including a first surface and a second surface opposite to each other along a thickness direction thereof;

[0008] a first seed layer, wherein the first seed layer covers the inner wall of the through hole and the area around the opening of the through hole;

[0009] a metal layer, wherein the metal layer covers the first seed layer, and a portion of the metal layer located in a peripheral area of ​​the opening of the through hole forms an annular metal pad;

[0010] A plugging material, wherein the plugging material is filled in the through hole;

[0011] A first resin layer, wherein the first surface and the second surface of the glass core board are both provided with the first resin layer, and the annular metal pad is not covered by the first resin layer, and the annular metal pad is flush with the first resin layer or the annular metal pad is higher than the first resin layer;

[0012] A second seed layer and an inner circuit layer are stacked, wherein the second seed layer is located on a surface of the first resin layer that is away from the glass core board, and the inner circuit layer covers a surface of the second seed layer that is away from the glass core board;

[0013] At least one multi-layer composite structure is arranged on the side of the inner circuit layer away from the glass core board, the multi-layer composite structure comprises a second resin layer, a third seed layer and a circuit layer arranged in sequence in a direction away from the glass core board, the second resin layer has a through hole, and the third seed layer and the circuit layer are stacked and arranged on the side of the second resin layer away from the glass core board;

[0014] A solder resist layer, the solder resist layer being arranged on a side of the multi-layer composite structure away from the glass core board;

[0015] A solder ball is disposed on the solder resist layer, and a bottom of the solder ball passes through the solder resist layer and contacts the outermost circuit layer.

[0016] In one implementation, the plugging material is a resin, and the resin includes ABF, RCC and / or a photosensitive dry film insulating layer material, or the plugging material is the same as the material of the first resin layer; or,

[0017] The plugging material is metal; the metal includes copper, tungsten and / or titanium.

[0018] In one implementation, the first seed layer, the second seed layer and / or the third seed layer include at least one sub-metal layer; or,

[0019] The first seed layer, the second seed layer and / or the third seed layer include multiple sub-metal layers, and the multiple sub-metal layers are made of different materials.

[0020] In one implementation, the sub-metal layer is made of titanium, copper or tungsten.

[0021] In one implementation, the solder balls include chip solder balls and substrate solder balls, the chip solder balls are arranged on the solder resist layer on one side of the glass chip, and the substrate solder balls are arranged on the solder resist layer on the other side of the glass chip, the chip solder balls are used to bond with the chip, and the substrate solder balls are used to bond with the printed circuit board;

[0022] The side of the chip solder ball facing away from the glass core board has a plane; and / or the side of the substrate solder ball facing away from the glass core board is a spherical surface.

[0023] In the glass substrate provided by the present application, the plugging material does not use the traditional vacuum plugging of liquid ink or vacuum silk screen plugging, but uses resin or metal plugging, thereby improving the reliability of the glass substrate. In addition, the glass core board provides a high-rigidity support structure for the overall glass substrate, and utilizes the high bonding force of the plugging resin to the glass core board and the inner metal circuit to form a high-strength bond between the metal layer and the glass core board, solving the problem of poor direct bonding strength between the metal layer and the surface of the glass core board. The high-rigidity support structure provided by the glass core board for the overall glass substrate can reduce the overall warping of the substrate, thereby avoiding the bridging of solder balls when flipping the chip, avoiding short circuits and the inability of some solder balls of the chip to be welded to the substrate pads, forming an open circuit; it can also avoid the large stress between the chip and the substrate caused by severe substrate warping, and the stress changes will cause problems such as solder ball cracking, substrate cracking, and chip cracking.

[0024] A method for manufacturing a glass substrate, comprising:

[0025] A glass core board is provided with holes, wherein a plurality of through holes are provided on the glass core board, wherein the glass core board has a first surface and a second surface opposite to each other;

[0026] forming a first seed layer on the surface of the glass core board with through holes;

[0027] forming a first mask on the surface of the structure formed in the previous step, wherein the first mask covers the first surface and the second surface of the structure formed in the previous step except for the inner wall of the through hole and the area around the opening of the through hole;

[0028] Through-hole metallization, forming a metal layer on the inner wall of the through-hole of the glass core board and the area around the through-hole opening, and the metal layer in the area around the through-hole opening forms an annular metal pad;

[0029] removing the first mask and the first seed layer covered by the first mask;

[0030] Plug holes and form a first resin layer, fill the through holes of the glass core board with resin or metal, and press plugging resin on the first surface and the second surface of the glass core board to form a first resin layer on the first surface and the second surface of the glass core board;

[0031] Thinning the first resin layer so that the annular metal pad is exposed outside the first resin layer;

[0032] forming a second seed layer, and forming the second seed layer on the surface of the first resin layer on both sides of the glass core board;

[0033] forming a second mask on the first surface and the second surface of the structure formed in the previous step, wherein the second mask has a hollow structure;

[0034] forming an inner circuit layer in the hollow structure of the second mask;

[0035] removing the second mask and the second seed layer covered by the second mask;

[0036] forming a second resin layer by laminating resin on the first surface and the second surface of the structure formed in the previous step to form the second resin layer;

[0037] Opening through holes in the second resin layer on the first surface and the second surface;

[0038] forming a third seed layer, and forming the third seed layer on the surface of the second resin layer on both sides of the glass core board;

[0039] Forming a third mask on the first surface and the second surface of the structure formed in the previous step, wherein the third mask has a hollow structure;

[0040] forming a circuit layer in the hollow structure of the third mask;

[0041] removing the third mask and the third seed layer covered by the third mask;

[0042] Repeat at least once the steps of forming a second resin layer to removing the third mask and the third seed layer covered by the third mask;

[0043] Making a solder resist layer on the first surface and the second surface of the structure formed in the previous step, wherein the solder resist layer has connection holes corresponding to the circuit layer;

[0044] Ball planting: solder balls on the first surface and / or second surface of the structure formed in the previous step.

[0045] In one implementation, the forming of the first seed layer comprises: forming the first seed layer on the surface of the glass core board with the through hole by deposition; and / or,

[0046] The forming of the second seed layer comprises: forming the second seed layer on the surface of the first resin layer on both sides of the glass core board by deposition; and / or,

[0047] The forming of the third seed layer comprises: forming the third seed layer on the surface of the second resin layer on both sides of the glass core board by deposition.

[0048] In one implementation, the step of plugging the holes specifically includes: filling the through holes of the glass core board with resin, and pressing the resin on the first surface and the second surface of the glass core board, so that the resin fills the through holes of the glass core board and forms a first resin layer on the first surface and the second surface of the glass core board, and the annular metal pad is exposed on the first resin layer.

[0049] In one implementation, after the step of thinning the first resin layer, the annular metal pad is flush with the first resin layer or the annular metal pad is higher than the first resin layer.

[0050] In one implementation, a first mask is formed on the surface of the structure formed in the previous step, specifically, the first mask is formed on the surface of the structure formed in the previous step by using photolithography to make an electroplating mask; and / or,

[0051] A second mask is formed on the first surface and the second surface of the structure formed in the previous step, specifically, the second mask is formed on the first surface and the second surface of the structure formed in the previous step by using photolithography to make an electroplating mask.

[0052] In the glass substrate formed by the manufacturing method of the above-mentioned glass substrate, the plugging material does not use the traditional vacuum plugging of liquid ink or vacuum silk screen plugging, but uses resin or metal plugging, thereby improving the reliability of the glass substrate. In addition, the glass core board provides a high-rigidity support structure for the overall glass substrate, and the high bonding force of the plugging resin to the glass core board and the inner metal circuit is used to form a high-strength bond between the metal layer and the glass core board, solving the problem of poor direct bonding strength between the metal layer and the surface of the glass core board. The high-rigidity support structure provided by the glass core board for the overall glass substrate can reduce the overall warping of the substrate, thereby avoiding the bridging of solder balls when flipping the chip, avoiding short circuits and the inability of some solder balls of the chip to be soldered to the substrate pads, forming an open circuit; it can also avoid the large stress between the chip and the substrate caused by severe substrate warping, and the stress changes will cause problems such as solder ball cracking, substrate cracking, and chip cracking. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0054] Figure 1 A flow chart of a method for manufacturing a glass substrate provided in an embodiment of the present application;

[0055] Figure 2 A cross-sectional view of a glass core board after a through hole is opened provided in an embodiment of the present application;

[0056] Figure 3 A top view of a glass core board provided in an embodiment of the present application after a through hole is opened;

[0057] Figure 4 A schematic diagram of a first seed layer after being formed according to an embodiment of the present application;

[0058] Figure 5 for Figure 4 A partial enlarged view of the middle A area;

[0059] Figure 6 A schematic diagram after forming a first mask according to an embodiment of the present application;

[0060] Figure 7 A schematic diagram of a through hole after metallization provided in an embodiment of the present application;

[0061] Figure 8 A schematic diagram after removing the first mask provided in an embodiment of the present application;

[0062] Fig. 9 A cross-sectional view after removing the first seed layer provided in an embodiment of the present application;

[0063] Fig.10 A top view after removing the first seed layer covered by the first mask provided in an embodiment of the present application;

[0064] Fig.11 A schematic diagram after the plugging step provided in an embodiment of the present application;

[0065] Fig.12 A schematic diagram after a plugging step is provided for another embodiment of the present application;

[0066] Fig.13 A cross-sectional view of a first resin layer after thinning provided in an embodiment of the present application;

[0067] Fig.14 A top view of a first resin layer after thinning provided in an embodiment of the present application;

[0068] Fig.15 A schematic diagram of a second seed layer after being formed according to an embodiment of the present application;

[0069] Fig.16 A schematic diagram after forming a second mask according to an embodiment of the present application;

[0070] Fig.17 A schematic diagram of an embodiment of the present application after forming an inner circuit layer;

[0071] Fig.18 A schematic diagram of an embodiment of the present application after the second mask is removed;

[0072] Fig.19A schematic diagram of removing the second seed layer covered by the second mask provided in an embodiment of the present application;

[0073] Fig. 20 A schematic diagram of a second resin layer after being formed according to an embodiment of the present application;

[0074] Fig.21 This is a schematic diagram of a through hole formed on the second resin layer provided in an embodiment of the present application;

[0075] Fig. 22 A schematic diagram of a third seed layer after being formed according to an embodiment of the present application;

[0076] Fig.23 A schematic diagram after forming a third mask according to an embodiment of the present application;

[0077] Fig.24 A schematic diagram of a circuit layer after formation provided in an embodiment of the present application;

[0078] Fig.25 A schematic diagram of an embodiment of the present application after the third mask is removed;

[0079] Fig.26 A schematic diagram of removing the third seed layer covered by the third mask provided in an embodiment of the present application;

[0080] Fig. 27 A schematic diagram of a multi-layer circuit layer formed according to an embodiment of the present application;

[0081] Fig.28 A schematic diagram of a solder mask layer after being formed according to an embodiment of the present application;

[0082] Fig.29 A schematic diagram of a glass substrate provided in an embodiment of the present application.

[0083] Reference numerals:

[0084] 1-glass core board, 1a-through hole, 2-first seed layer, 3-first mask, 4-metal layer, 4a-annular metal pad, 5-first resin layer, 6-second seed layer, 7-second mask, 8-inner circuit layer, 8a-hole pad, 9-second resin layer, 9a-through hole, 10-third seed layer, 11-third mask, 12-circuit layer, 13-solder resist layer, 14-chip solder ball, 15-substrate solder ball. DETAILED DESCRIPTION

[0085] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0086] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0087] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" means two or more, unless otherwise clearly and specifically defined. "Several" means one or more, unless otherwise clearly and specifically defined.

[0088] In the description of the present application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", etc., indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present application.

[0089] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0090] In the prior art, as people's demand for data has exploded, the requirements for chips for data processing, data transmission, and data storage have continued to increase. As the size of organic substrates increases, the substrate warping increases significantly, which can easily lead to solder ball bridging during flip-chip mounting, resulting in short circuits and the inability of some chip solder balls to be soldered to the substrate pads, resulting in open circuits. In addition, severe substrate warping can also cause greater stress between the chip and the substrate. When the temperature changes, the stress changes, resulting in reliability issues such as solder ball cracking, substrate cracking, and chip cracking.

[0091] In view of the above situation, if Fig.29As shown, the embodiment of the present application provides a glass substrate, which can be manufactured by any of the following glass substrate manufacturing methods. The glass substrate includes a glass core board 1, a first seed layer 2, a metal layer 4, a plugging material, a first resin layer 5, a second seed layer 6, an inner circuit layer 8, a multi-layer composite structure, a solder resist layer 13, and solder balls. Among them, the first seed layer 2, the metal layer 4, the plugging material, the first resin layer 5, the second seed layer 6, the inner circuit layer 8, the multi-layer composite structure and the solder resist layer 13 on both sides of the glass core board 1 are symmetrically arranged.

[0092] The glass core board 1 has a plurality of through holes 1a, and the glass core board 1 includes a first surface and a second surface opposite to each other along its thickness direction. The first surface may be an upper surface, and the second surface may be a lower surface. The through hole 1a runs through the thickness of the glass core board 1, and one opening of the through hole 1a is located on the first surface, and the other opening of the through hole 1a is located on the second surface. The first seed layer 2 covers the inner wall of the through hole 1a of the glass core board 1 and the area around the opening of the through hole 1a, that is, the area around the opening on the first surface and the area around the opening on the second surface are both covered by the first seed layer 2.

[0093] The metal layer 4 covers the first seed layer 2, and the portion of the metal layer 4 located in the area around the opening of the through hole 1a forms an annular metal pad 4a. The annular metal pad 4a is used to connect the inner circuit layer 8. The metal layer 4 can be a single layer of metal, and the material of the single layer of metal can be copper, tungsten or titanium. Of course, the metal layer 4 can also include multiple sub-metal layers, and the materials of the multiple sub-metal layers can be the same or different. For example, the material of the sub-metal layer can be copper, tungsten or titanium. The thickness of the multiple sub-metal layers can be the same or different.

[0094] The plugging material is filled in the through hole 1a, and the plugging material can be resin or metal. In the case of filling the through hole 1a with metal, the material of the filled metal can be copper, tungsten or titanium, etc. In the case of filling the through hole 1a with resin, the filled resin can include ABF (ABFAjinomoto Build-up Film), RCC (Resin Coated Copper) and / or photosensitive dry film insulation layer material. In addition, the plugging material is made of the same material as the first resin layer 5, so that the resin is filled into the through hole while the first resin layer 5 is formed, simplifying the processing technology.

[0095] The first surface and the second surface of the glass core board 1 are both provided with a first resin layer 5, and the annular metal pad 4a is not covered by the first resin layer 5. That is, the annular metal pad 4a is exposed to the first resin layer 5, that is, the first resin layer 5 does not cover the annular metal pad 4a, so as to facilitate the connection between the annular metal pad 4a and the inner circuit layer 8. The annular metal pad 4a is flush with the first resin layer 5 or the annular metal pad 4a is higher than the first resin layer 5, and the specific annular metal pad 4a is slightly higher than the first resin layer 5, so that the inner circuit layer is manufactured on the entire flat surface, there is no requirement for hole filling electroplating, and the process is simple and convenient.

[0096] The second seed layer 6 and the inner circuit layer 8 are stacked, the second seed layer 6 is located on the surface of the first resin layer 5 facing away from the glass core board 1, and the inner circuit layer 8 covers the surface of the second seed layer 6 facing away from the glass core board 1. The portion of the inner circuit layer 8 opposite to the through hole 1a and the surrounding area is the orifice pad 8a, which is used to connect the circuit layer 12.

[0097] The multilayer composite structure is arranged on the side of the inner circuit layer 8 away from the glass core board 1. When multiple multilayer composite structures are arranged on the upper side or the lower side of the glass core board 1, the multiple multilayer composite structures are stacked in sequence. Alternatively, a multilayer composite structure can also be arranged on the upper side or the lower side of the glass core board 1. The multilayer composite structure includes a second resin layer 9, a third seed layer 10 and a circuit layer 12 arranged in sequence along a direction away from the glass core board 1, the second resin layer 9 has a through hole 9a, and the third seed layer 10 and the circuit layer 12 are stacked and arranged on the side of the second resin layer 9 away from the glass core board 1. The multiple through holes 9a can be respectively opposite to the multiple orifice pads 8a, so as to facilitate the connection of the orifice pads 8a with the circuit layer 12 through the through holes 9a.

[0098] The solder resist layer 13 is arranged on the side of the multilayer composite structure away from the glass core board 1. The solder resist layer 13 has a connection hole corresponding to the circuit layer 12, and the connection hole is used to connect with the solder ball. The solder ball is arranged on the solder resist layer. The solder ball may include a chip solder ball 14 and a substrate solder ball 15, wherein the chip solder ball 14 is arranged on the solder resist layer 13 on one side of the glass chip, and the substrate solder ball 15 is arranged on the solder resist layer 13 on the other side of the glass chip, the chip solder ball 14 is used to bond with the chip, and the substrate solder ball 15 is used to bond with the printed circuit board.

[0099] In the above-mentioned glass substrate, the plugging material does not use the traditional vacuum plugging of liquid ink or vacuum silk screen plugging, but uses resin or metal plugging, thereby improving the reliability of the glass substrate. In addition, the glass core board provides a high-rigidity support structure for the overall glass substrate, and utilizes the high bonding force of the plugging resin to the glass core board and the inner metal circuit to form a high-strength bond between the metal layer and the glass core board, solving the problem of poor direct bonding strength between the metal layer and the surface of the glass core board. The high-rigidity support structure provided by the glass core board 1 for the overall glass substrate can reduce the overall warping of the substrate, thereby avoiding the bridging of solder balls when flipping the chip, avoiding short circuits and the inability of some solder balls of the chip to be soldered to the substrate pads, forming an open circuit; it can also avoid the large stress between the chip and the substrate caused by severe substrate warping, and the stress changes causing problems such as solder ball cracking, substrate cracking, and chip cracking.

[0100] The chip solder ball 14 is used for bonding with the chip, and the side of the chip solder ball 14 facing away from the glass core board 1 has a flat surface to facilitate bonding with the chip.

[0101] The substrate solder ball 15 is used for bonding with a printed circuit board. The side of the substrate solder ball 15 facing away from the glass core board 1 is a spherical surface, so as to facilitate bonding with the printed circuit board.

[0102] In the above technical solution, the first resin layer 5 may include ABF (ABF: Ajinomoto Build-up Film), RCC and / or photosensitive dry film insulation layer materials. The second resin layer 9 may include ABF (ABF: Ajinomoto Build-up Film), RCC and / or photosensitive dry film insulation layer materials.

[0103] The first seed layer 2, the second seed layer 6 and / or the third seed layer 10 include at least one sub-metal layer. That is, the first seed layer 2, the second seed layer 6 and / or the third seed layer 10 can be a single layer of metal, and the material of the single layer of metal can be copper, tungsten or titanium. Of course, the first seed layer 2, the second seed layer 6 and / or the third seed layer 10 can also include multiple sub-metal layers, and the materials of the multiple sub-metal layers can be the same or different. For example, the material of the sub-metal layer can be copper, tungsten or titanium. The thickness of the multiple sub-metal layers can be the same or different.

[0104] See also Figure 1 The present invention also provides a method for manufacturing a glass substrate, which includes:

[0105] S1: A glass core board 1 is opened. A plurality of through holes 1 a are opened on the glass core board 1 . The glass core board 1 has a first surface and a second surface opposite to each other.

[0106] like Figure 2 and Figure 3As shown, specifically, along the thickness direction, the glass core board 1 has a first surface and a second surface opposite to each other, and the first surface and the second surface are both perpendicular to the thickness direction of the glass core board 1. A plurality of through holes 1a are provided on the glass core board 1, which penetrate the thickness thereof, and one opening of the through hole 1a is located on the first surface, and the other opening of the through hole 1a is located on the second surface.

[0107] In this step, the holes may be opened by laser.

[0108] S2: forming a first seed layer 2, forming the first seed layer 2 on the surface of the glass core board 1 with the through hole 1a;

[0109] like Figure 4 and Figure 5 As shown, a first seed layer 2 is formed on the surface of the glass core board 1 after the hole is opened in step S1, and the first seed layer 2 covers the first surface, the second surface and the inner wall of the through hole 1a of the glass core board 1. Optionally, the first seed layer 2 can be formed by deposition, electroplating, etc.

[0110] In this way, a regular, dense and smooth first seed layer 2 is formed on the surface of the glass core board 1, which has good brightness and level distribution, so that the adhesion between the electrolyte and the metal is enhanced and the surface uniformity of the deposit is promoted.

[0111] S3: forming a first mask 3 on the surface of the structure formed in the previous step, the first mask 3 covering the first surface and the second surface of the structure formed in the previous step except for the inner wall of the through hole 1a and the area around the opening of the through hole 1a;

[0112] like Figure 6 As shown, a first mask 3 is formed on the surface of the structure formed in step S2. Specifically, the first mask 3 is formed on both the first surface and the second surface of the structure formed in step S2. The first surface may be an upper surface, and the second surface may be a lower surface. The first mask 3 covers the first surface and the second surface of the structure formed in the previous step except for the inner wall of the through hole 1a and the area around the opening of the through hole 1a, that is, the first mask 3 has a hollow structure, and the hollow structure of the first mask 3 is opposite to the opening of the through hole 1a and the surrounding area thereof, so that the inner wall of the through hole 1a and the area around the opening of the through hole 1a are not covered by the first mask 3.

[0113] In this step, the first mask 3 can be formed on the surface of the structure formed in the previous step by using a photolithography method to make an electroplating mask. Specifically, a dry film is first pressed on the first surface and the second surface of the structure formed in the previous step, and then exposure and development are performed in sequence to finally form the first mask 3. The material of the dry film is a photosensitive polymer material. Of course, other methods can also be used to form the first mask 3, which is not limited here.

[0114] S4: through-hole metallization, forming a metal layer 4 on the inner wall of the through-hole 1a of the glass core board 1 and the area around the hole opening of the through-hole 1a, and the metal layer 4 in the area around the hole opening of the through-hole 1a forms an annular metal pad 4a;

[0115] like Figure 7 As shown, in this step, a metal layer 4 is formed on the inner wall of the through hole 1a of the glass core board 1 and the area around the opening of the through hole 1a. Specifically, the metal layer 4 can be formed on the inner wall of the through hole 1a and the area around the opening of the through hole 1a by electroplating, deposition, etc. The portion of the metal layer 4 located in the area around the opening of the through hole 1a is a ring-shaped metal pad 4a for connecting the inner circuit layer 8.

[0116] In this step, the metal layer 4 may be a single metal layer, and the material of the single metal layer may be copper, tungsten, titanium or other metals. Of course, the metal layer 4 may also include multiple sub-metal layers, and the materials of the multiple sub-metal layers may be the same or different, for example, the material of the sub-metal layer may be copper, tungsten or titanium. The thicknesses of the multiple sub-metal layers may be the same or different.

[0117] S5: removing the first mask 3 and the first seed layer 2 covered by the first mask 3;

[0118] like Figure 8-Figure 10 As shown, the first mask 3 and the first seed layer 2 covered by the first mask 3 are removed, and the metal layer 4 and the first seed layer 2 covered by the metal layer 4 are retained.

[0119] In this step, the first mask 3 and the first seed layer 2 covered by the first mask 3 can be removed in two steps, that is, the first mask 3 is first removed, and then the first seed layer 2 covered by the first mask 3 is removed. Specifically, the first mask 3 can be directly peeled off by stripping, and then the first seed layer 2 covered by the first mask 3 can be removed by wet etching or laser etching.

[0120] S6: plugging the hole and forming the first resin layer 5, filling the through hole 1a of the glass core board 1 with resin or metal, and pressing the resin on the first surface and the second surface of the glass core board 1 to form the first resin layer 5 on the first surface and the second surface of the glass core board 1, and the annular metal pad 4a is exposed on the first resin layer 5;

[0121] like Fig.11 As shown, in this step, the through hole 1a is filled with resin, that is, the through hole 1a is filled with resin. Fig.12 As shown, in this step, metal is used to fill the through hole 1a, that is, the through hole 1a is filled with metal. Fig.11 As shown, resin is pressed on the first surface and the second surface of the glass core board 1 to form a first resin layer 5 on the first surface and the second surface of the glass core board 1 , and the annular metal pad 4 a is exposed on the first resin layer 5 .

[0122] When the through hole 1a is filled with metal, the through hole 1a may be filled with metal first, and then resin may be pressed on both the first surface and the second surface of the glass core board 1 to form a first resin layer 5. The material of the filled metal and the metal layer 4 may be the same or different, and the material of the filled metal may be copper, tungsten or titanium, etc.

[0123] In the case of filling the through hole 1a with resin, the filling of the resin can be completed simultaneously with the first resin layer 5, that is, the resin is pressed on both the first surface and the second surface of the glass core board 1, so that the resin fills the through hole 1a of the glass core board 1 and forms the first resin layer 5 on the first surface and the second surface of the glass core board 1. The filled resin may include ABF (ABF: Ajinomoto Build-up Film), RCC (Resin Coated Copper) and / or photosensitive dry film insulation layer material.

[0124] S6 ′: thinning the first resin layer 5 so that the annular metal pad is exposed outside the first resin layer.

[0125] The annular metal pad 4a is exposed on the first resin layer 5, that is, the first resin layer 5 does not cover the annular metal pad 4a, so as to facilitate the connection between the annular metal pad 4a and the inner circuit layer 8. The first resin layer 5 and the annular metal pad 4a can be flush, or the annular metal pad 4a is slightly higher than the first resin layer 5.

[0126] like Fig.13 and Fig.14 As shown, in view of the fact that the thickness of the first resin layer 5 cannot be controlled during the resin lamination process, after S6 plugs the hole and forms the first resin layer 5, step S6' is also included: thinning the first resin layer 5 so that the annular metal pad is exposed on the first resin layer, and the surface of the first resin layer 5 can also be polished in the step. The thickness of the thinned first resin layer 5 is 3μm-5μm. Specifically, the first resin layer 5 can be thinned by a grinding wheel, or the first resin layer 5 can be thinned by chemical mechanical polishing. Further, after thinning, CMP (Chemical Mechanical Polishing) polishing can be performed to remove small scratches on the surface. Exemplarily, the thickness of the thinned first resin layer 5 is 3μm, 3.5μm, 4μm, 4.5μm or 5μm.

[0127] S7: forming a second seed layer 6, forming the second seed layer 6 on the surface of the first resin layer 5 on both sides of the glass core board 1;

[0128] like Fig.15As shown, a second seed layer 6 is formed on the surface of the structure formed in step S7, specifically, the second seed layer 6 is formed on the surface of the first resin layer 5 of the structure formed in the previous step away from the glass core board 1, and the second seed layer 6 covers the surface of the first resin layer 5 away from the glass core board 1. Optionally, the second seed layer 6 can be formed by deposition, electroplating, etc.

[0129] S8: forming a second mask 7 on the first surface and the second surface of the structure formed in the previous step, wherein the second mask 7 has a hollow structure;

[0130] like Fig.16 As shown, a second mask 7 is formed on the surface of the structure formed in step S7. Specifically, the second mask 7 is formed on both the first surface and the second surface of the structure formed in step S7. The first surface may be an upper surface, and the second surface may be a lower surface. The second mask 7 covers the first surface and the second surface of the structure formed in the previous step. The second mask 7 has a hollow structure, and the hollow structure of the second mask 7 is used to form an inner circuit layer 8.

[0131] In this step, the second mask 7 can be formed on the surface of the structure formed in the previous step by using a photolithography method to make an electroplating mask. Specifically, a dry film is first pressed on the first surface and the second surface of the structure formed in the previous step, and then exposure and development are performed in sequence to finally form the second mask 7. The material of the dry film is a photosensitive polymer material. Of course, other methods can also be used to form the second mask 7, which is not limited here.

[0132] S9: forming an inner circuit layer 8 in the hollow structure of the second mask 7;

[0133] like Fig.17 As shown, in this step, an inner circuit layer 8 is formed in the hollow structure of the second mask 7. Specifically, the inner circuit layer 8 can be formed in the hollow structure of the second mask 7 by electroplating, deposition, etc. The portion of the inner circuit layer 8 opposite to the through hole 1a and the surrounding area is an orifice pad 8a, which is used to connect the circuit layer 12. The orifice pad 8a has the same thickness as other positions of the inner circuit layer 8.

[0134] In this step, the material of the inner circuit layer 8 can be copper, tungsten or titanium.

[0135] S10: removing the second mask 7 and the second seed layer 6 covered by the second mask 7;

[0136] like Figure 18-Figure 19 As shown, the second mask 7 and the second seed layer 6 covered by the second mask 7 are removed, and the inner circuit layer 8 and the second seed layer 6 covered by the inner circuit layer 8 are retained.

[0137] In this step, the second mask 7 and the second seed layer 6 covered by the second mask 7 can be removed in two steps, that is, the second mask 7 is removed first, and then the second seed layer 6 covered by the second mask 7 is removed. Specifically, the second mask 7 can be directly peeled off by stripping, and then the second seed layer 6 covered by the second mask 7 can be removed by wet etching or laser etching.

[0138] S11: forming a second resin layer 9, by laminating resin on the first surface and the second surface of the structure formed in the previous step to form the second resin layer 9;

[0139] like Fig. 20 As shown, the inner circuit layer 8 of the structure formed in the previous step is filled with resin on the side away from the glass core board 1 to form a second resin layer 9. That is, the first surface and the second surface of the structure formed in the previous step are filled with resin to form the second resin layer 9.

[0140] S12: opening through holes 9a on the second resin layer 9 on the first surface and the second surface;

[0141] like Fig.21 As shown, a plurality of through holes 9a are formed in the second resin layer 9, which penetrate the thickness of the second resin layer 9. The plurality of through holes 9a can be respectively opposite to the plurality of orifice pads 8a, so as to facilitate the connection of the orifice pads 8a with the circuit layer 12 through the through holes 9a. Preferably, the through holes 9a can be formed in the second resin layer 9 by laser technology.

[0142] S13: forming a third seed layer 10, forming the third seed layer 10 on the surface of the second resin layer 9 on both sides of the glass core board 1;

[0143] like Fig. 22 As shown, a third seed layer 10 is formed on the surface of the structure formed in step S12, specifically, the third seed layer 10 is formed on the surface of the second resin layer 9 of the structure formed in the previous step away from the glass core board 1, and the third seed layer 10 is required on both the upper and lower sides of the structure formed in the previous step, and the third seed layer 10 covers the surface of the second resin layer 9 away from the glass core board 1. Optionally, the third seed layer 10 can be formed by deposition, electroplating, etc.

[0144] S14: forming a third mask 11 on the first surface and the second surface of the structure formed in the previous step, wherein the third mask 11 has a hollow structure;

[0145] like Fig.23As shown, a third mask 11 is formed on the surface of the structure formed in step S13. Specifically, the third mask 11 is formed on both the first surface and the second surface of the structure formed in step S13. The first surface may be an upper surface, and the second surface may be a lower surface. The third mask 11 covers the first surface and the second surface of the structure formed in the previous step. The third mask 11 has a hollow structure, and the hollow structure of the third mask 11 is used to form a circuit layer 12.

[0146] In this step, the third mask 11 can be formed on the surface of the structure formed in the previous step by using photolithography to make an electroplating mask. Specifically, a dry film is first pressed on the first surface and the second surface of the structure formed in the previous step, and then exposure and development are performed in sequence to finally form the third mask 11. The material of the dry film is a photosensitive polymer material. Of course, other methods can also be used to form the third mask 11, which is not limited here.

[0147] S15: forming a circuit layer 12 in the hollow structure of the third mask 11;

[0148] like Fig.24 As shown, in this step, a circuit layer 12 is formed in the hollow structure of the third mask 11. Specifically, the circuit layer 12 can be formed in the hollow structure of the third mask 11 by electroplating, deposition, etc.

[0149] In this step, the material of the circuit layer 12 can be copper, tungsten or titanium.

[0150] S16: removing the third mask 11 and the third seed layer 10 covered by the third mask 11;

[0151] like Figure 25-26 As shown, the third mask 11 and the third seed layer 10 covered by the third mask 11 are removed, and the circuit layer 12 and the third seed layer 10 covered by the circuit layer 12 are retained.

[0152] In this step, the third mask 11 and the third seed layer 10 covered by the third mask 11 can be removed in two steps, that is, the third mask 11 is first removed, and then the third seed layer 10 covered by the third mask 11 is removed. Specifically, the third mask 11 can be directly peeled off by stripping, and then the third seed layer 10 covered by the third mask 11 can be removed by wet etching or laser etching.

[0153] S17: repeating at least once the steps of forming the second resin layer 9 to removing the third mask 11 and the third seed layer 10 covered by the third mask 11;

[0154] like Fig. 27 As shown, steps S11 - S16 are repeated at least once, thereby manufacturing a multi-layer wiring layer 12 .

[0155] S18: forming a solder resist layer 13 on the first surface and the second surface of the structure formed in the previous step, and the solder resist layer 13 has connection holes corresponding to the circuit layer 12;

[0156] like Fig.28 As shown, in this step, a solder resist layer 13 is made on the first surface and the second surface of the structure formed in the previous step, that is, a solder resist layer 13 is made on the outermost circuit layer 12 on the upper and lower sides of the structure formed in the previous step, and the solder resist layer 13 has connecting holes corresponding to the circuit layer 12, and the connecting holes are used to connect with the solder balls.

[0157] S19: Ball planting: soldering balls on the first surface and / or second surface of the structure formed in the previous step.

[0158] Specifically, chip solder balls 14 and substrate solder balls 15 may be respectively disposed on the first surface and the second surface of the structure formed in the previous step. The chip solder balls 14 are used for bonding with the chip, and the substrate solder balls 15 are used for bonding with the printed circuit board.

[0159] like Fig.29 As shown, a chip solder ball 14 is arranged on the first surface of the structure formed in the previous step, and a substrate solder ball 15 is arranged on the second surface of the structure formed in the previous step, and the bottom of the solder ball corresponds to the connection hole. The chip solder ball 14 is used for bonding with the chip, and the side of the chip solder ball 14 facing away from the glass core board 1 has a plane to facilitate bonding with the chip. The substrate solder ball 15 is used for bonding with a printed circuit board, and the side of the substrate solder ball 15 facing away from the glass core board 1 is a spherical surface to facilitate bonding with the printed circuit board.

[0160] In the glass substrate formed by the manufacturing method of the above-mentioned glass substrate, the plugging material does not use the traditional vacuum plugging of liquid ink or vacuum silk screen plugging, but uses resin or metal plugging, thereby improving the reliability of the glass substrate. In addition, the glass core board 1 provides a high-rigidity support structure for the overall glass substrate, and the high bonding force of the plugging resin to the glass core board 1 and the inner metal circuit is used to form a high-strength bond between the metal layer 4 and the glass core board 1, solving the problem of poor direct bonding strength between the metal layer 4 and the surface of the glass core board 1. The high-rigidity support structure provided by the glass core board 1 for the overall glass substrate can reduce the overall warping of the substrate, thereby avoiding the bridging of solder balls when flipping the chip, avoiding short circuits and the inability of some solder balls of the chip to be soldered to the substrate pads, forming an open circuit; it can also avoid the large stress between the chip and the substrate caused by severe substrate warping, and the stress changes causing problems such as solder ball cracking, substrate cracking, and chip cracking.

[0161] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0162] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A glass substrate, characterized in that: include: A glass core board having a plurality of through holes, the glass core board comprising a first surface and a second surface opposite to each other along a thickness direction thereof; a first seed layer, wherein the first seed layer covers the inner wall of the through hole and the area around the opening of the through hole; a metal layer, wherein the metal layer covers the first seed layer, and a portion of the metal layer located in a peripheral area of ​​the opening of the through hole forms an annular metal pad; A plugging material, wherein the plugging material is filled in the through hole; A first resin layer, wherein the first surface and the second surface of the glass core board are both provided with the first resin layer, and the annular metal pad is not covered by the first resin layer, and the annular metal pad is flush with the first resin layer or the annular metal pad is higher than the first resin layer; A second seed layer and an inner circuit layer are stacked, wherein the second seed layer is located on a surface of the first resin layer that is away from the glass core board, and the inner circuit layer covers a surface of the second seed layer that is away from the glass core board; At least one multi-layer composite structure is arranged on the side of the inner circuit layer away from the glass core board, the multi-layer composite structure comprises a second resin layer, a third seed layer and a circuit layer arranged in sequence in a direction away from the glass core board, the second resin layer has a through hole, and the third seed layer and the circuit layer are stacked and arranged on the side of the second resin layer away from the glass core board; A solder resist layer, the solder resist layer being arranged on a side of the multi-layer composite structure away from the glass core board; A solder ball is disposed on the solder resist layer, and a bottom of the solder ball passes through the solder resist layer and contacts the outermost circuit layer.

2. The glass substrate according to claim 1, wherein: The plugging material is a resin, and the resin includes ABF, RCC and / or a photosensitive dry film insulating layer material, or the plugging material is the same as the material of the first resin layer; or, The plugging material is metal; the metal includes copper, tungsten and / or titanium.

3. The glass substrate according to claim 1, wherein: The first seed layer, the second seed layer and / or the third seed layer include at least one sub-metal layer; or, The first seed layer, the second seed layer and / or the third seed layer include multiple sub-metal layers, and the multiple sub-metal layers are made of different materials.

4. The glass substrate according to claim 3, characterized in that: The material of the sub-metal layer is titanium, copper or tungsten.

5. The glass substrate according to claim 1, wherein: The solder balls include chip solder balls and substrate solder balls. The chip solder balls are arranged on the solder resist layer on one side of the glass core board, and the substrate solder balls are arranged on the solder resist layer on the other side of the glass core board. The chip solder balls are used for bonding with the chip, and the substrate solder balls are used for bonding with the printed circuit board.

6. A method for manufacturing a glass substrate, characterized in that: include: A glass core board is provided with holes, wherein a plurality of through holes are provided on the glass core board, wherein the glass core board has a first surface and a second surface opposite to each other; forming a first seed layer on the surface of the glass core board with through holes; forming a first mask on the surface of the structure formed in the previous step, wherein the first mask covers the first surface and the second surface of the structure formed in the previous step except for the inner wall of the through hole and the area around the opening of the through hole; Through-hole metallization, forming a metal layer on the inner wall of the through-hole of the glass core board and the area around the through-hole opening, and the metal layer in the area around the through-hole opening forms an annular metal pad; removing the first mask and the first seed layer covered by the first mask; Plug the holes and form a first resin layer, fill the through holes of the glass core board with resin or metal, and press the resin on the first surface and the second surface of the glass core board to form a first resin layer on the first surface and the second surface of the glass core board; Thinning the first resin layer so that the annular metal pad is exposed outside the first resin layer; forming a second seed layer, and forming the second seed layer on the surface of the first resin layer on both sides of the glass core board; forming a second mask on the first surface and the second surface of the structure formed in the previous step, wherein the second mask has a hollow structure; forming a layer circuit in the pattern of the second mask; removing the second mask and the second seed layer covered by the second mask; forming a second resin layer by laminating resin on the first surface and the second surface of the structure formed in the previous step to form the second resin layer; Opening through holes in the second resin layer on the first surface and the second surface; forming a third seed layer, and forming the third seed layer on the surface of the second resin layer on both sides of the glass core board; Forming a third mask on the first surface and the second surface of the structure formed in the previous step, wherein the third mask has a hollow structure; forming a circuit layer in the hollow structure of the third mask; removing the third mask and the third seed layer covered by the third mask; Repeat at least once the steps of forming a second resin layer to removing the third mask and the third seed layer covered by the third mask; Making a solder resist layer on the first surface and the second surface of the structure formed in the previous step, wherein the solder resist layer has connection holes corresponding to the circuit layer; Ball planting: solder balls on the first surface and / or second surface of the structure formed in the previous step.

7. The method for manufacturing a glass substrate according to claim 6, wherein: The forming of the first seed layer comprises: forming the first seed layer on the surface of the glass core board with the through hole by deposition; and / or, The forming of the second seed layer comprises: forming the second seed layer on the surface of the first resin layer on both sides of the glass core board by deposition; and / or, The forming of the third seed layer comprises: forming the third seed layer on the surface of the second resin layer on both sides of the glass core board by deposition.

8. The method for manufacturing a glass substrate according to claim 6, wherein: The step of plugging the holes is specifically as follows: filling the through holes of the glass core board with resin, and pressing the resin on the first surface and the second surface of the glass core board, so that the resin fills the through holes of the glass core board and forms a first resin layer on the first surface and the second surface of the glass core board.

9. The method for manufacturing a glass substrate according to claim 6, wherein: After the step of thinning the first resin layer, the annular metal pad is flush with the first resin layer or the annular metal pad is higher than the first resin layer.

10. The method for manufacturing a glass substrate according to claim 6, wherein: forming a first mask on the surface of the structure formed in the previous step, specifically, forming the first mask on the surface of the structure formed in the previous step by using photolithography to make an electroplating mask; and / or, A second mask is formed on the first surface and the second surface of the structure formed in the previous step, specifically, the second mask is formed on the first surface and the second surface of the structure formed in the previous step by using photolithography to make an electroplating mask.

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