Quantum dot material, quantum dot patterning method and related device and device

Abstract

The invention discloses a quantum dot material, a quantum dot patterning method and a related device and device, the quantum dot material comprises a quantum dot body and at least one photosensitive group connected with the quantum dot body, and the photosensitive group is configured to be subjected to cross-linking reaction with the photosensitive group connected with the adjacent quantum dot body; wherein the photosensitive group is a chalcone group. The quantum dot bodies are modified with the photosensitive groups, and the photosensitive groups are configured to be in cross-linking reaction with the photosensitive groups connected with the adjacent quantum dot bodies, so that patterning of the quantum dot film layer can be realized. Furthermore, by limiting the photosensitive group as a chalcone group, the electron cloud density of carbon-carbon double bonds can be increased by utilizing a ketone group and a benzene ring, so that the energy required by breakage of the carbon-carbon double bonds in a photo-crosslinking reaction is reduced, the probability of damage to the quantum dot body is reduced, and the resolution and the display effect of a display device are improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to quantum dot materials, quantum dot patterning methods, and related devices and apparatuses. Background Art

[0002] Semiconductor quantum dots (Quantum Dot, QD) is an important fluorescent nanomaterial. Using quantum dot materials as light-emitting layer materials and applying them in the field of optoelectronic displays is gradually becoming a future development trend.

[0003] In the prior art, the patterning process of quantum dots is usually achieved by inkjet printing or photolithography. However, the prior art cannot produce quantum dots with high resolution and good performance. Summary of the invention

[0004] In order to solve the above problems or other problems, the present application provides the following technical solutions.

[0005] The first technical solution adopted in the present application is to provide a quantum dot material, including: a quantum dot body; and at least one photosensitive group connected to the quantum dot body, the photosensitive group being configured to undergo a cross-linking reaction with a photosensitive group connected to an adjacent quantum dot body; wherein the photosensitive group is a chalcone group.

[0006] The chalcone group includes: a ketone group; and a benzene ring connected to the ketone group; wherein the benzene ring is modified with at least one electron-donating group.

[0007] The electron-donating group is modified at the ortho position and / or para position of the keto group.

[0008] The electron donating group includes at least one of a strong electron donating group, a medium electron donating group and a weak electron donating group.

[0009] Wherein, the chalcone group includes compounds represented by Formula 1:

[0010] Formula 1

[0011] The chalcone group is a product of cross-aldol condensation of aromatic aldehydes and ketones; preferably, the benzene ring connected to the ketone group in the chalcone group is modified with at least one electron-donating group.

[0012] The quantum dot material further includes: other ligand groups connected to the quantum dot body; the number of photosensitive groups is a first value, the sum of the number of photosensitive groups and other ligand groups is a second value, and the ratio of the first value to the second value is any value between 40% and 60%.

[0013] To solve the above technical problems, the second technical solution adopted in the present application is to provide a quantum dot patterning method, comprising: obtaining a quantum dot material; wherein the quantum dot material includes a quantum dot body and at least one photosensitive group connected to the quantum dot body, and the photosensitive group is configured to undergo a cross-linking reaction with a photosensitive group connected to an adjacent quantum dot body; wherein the photosensitive group is a chalcone group; obtaining a quantum dot solution based on the quantum dot material; depositing the quantum dot solution on a substrate to form a quantum dot film; exposing the quantum dot film to undergo a photo-cross-linking reaction; wherein the photo-cross-linking reaction includes a cross-linking reaction between the chalcone groups connected to two adjacent quantum dot bodies; and developing the quantum dot film to form a preset pattern on the quantum dot film layer.

[0014] The step of exposing the quantum dot film to generate a photo-crosslinking reaction includes: irradiating the quantum dot film with ultraviolet light to generate a photo-crosslinking reaction; wherein the wavelength of the ultraviolet light is 365nm or 405nm.

[0015] In order to solve the above technical problems, the third technical solution adopted in the present application is to provide a quantum dot light-emitting device, which includes a substrate, an anode, a light-emitting layer and a cathode stacked in sequence on the substrate, the light-emitting layer includes a quantum dot film layer, and the quantum dot film layer is made by the above-mentioned quantum dot patterning method; wherein, the quantum dot material in the quantum dot film layer includes a quantum dot body and at least one photosensitive group connected to the quantum dot body, and the photosensitive group is configured to undergo a cross-linking reaction with a photosensitive group connected to an adjacent quantum dot body; wherein, the photosensitive group is a chalcone group.

[0016] In order to solve the above technical problems, the fourth technical solution adopted in the present application is to provide a display device, including the above quantum dot light-emitting device.

[0017] The beneficial effects of the present application are as follows: Different from the prior art, the present application provides quantum dot materials, quantum dot patterning methods, and related devices and apparatuses. By modifying the photosensitive group on the quantum dot body and configuring the photosensitive group to undergo a cross-linking reaction with the photosensitive group connected to the adjacent quantum dot body, the cross-linking structure formed between different quantum dots can be used to combine two quantum dots together to improve the stability of the quantum dot film layer and the anti-development performance of the reserved area, thereby achieving patterning of the quantum dot film layer. Furthermore, by limiting the photosensitive group to a chalcone group, the ketone group and the benzene ring can be used to increase the electron cloud density of the carbon-carbon double bond, thereby reducing the energy required for the carbon-carbon double bond to break in the photocross-linking reaction, thereby reducing the probability of damage to the quantum dot body, and then improving the resolution and display effect of the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the example description will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 It is a structural schematic diagram of an implementation method of the quantum dot material of the present application;

[0020] Figure 2 is a schematic diagram of the reaction of two quantum dot materials having a chalcone group in the present application;

[0021] Figure 3 It is a schematic diagram of the structure of the quantum dot entity of the present application and the alkyl chain connected to the ligand group;

[0022] Figure 4 It is a schematic diagram of a process of an implementation method of a quantum dot patterning method of the present application;

[0023] Figure 5 It is a schematic structural diagram of an embodiment of a quantum dot light-emitting device of the present application. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0025] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms of "a", "said", and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless otherwise clearly indicated above, and "multiple" generally includes at least two, but does not exclude the inclusion of at least one.

[0026] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0027] It should be understood that the terms "include", "comprises" or any other variations used herein are intended to cover non-exclusive inclusion, so that a process, method, article or device that includes a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of more restrictions, the elements defined by the sentence "includes..." do not exclude the presence of other identical elements in the process, method, article or device that includes the elements.

[0028] In one embodiment, the patterning process of quantum dots is usually achieved by inkjet printing or photolithography. However, the morphology and thickness uniformity of the film formed by inkjet printing are poor, and it is only suitable for preparing devices with medium and low pixel density, and it is difficult to prepare high PPI (pixel density unit, that is, the number of pixels per inch) devices; photolithography is not limited by PPI, but when the photocrosslinking reaction occurs, the energy required for bond breaking is large, which may cause the structure of the quantum dots to be destroyed, thereby affecting the display effect.

[0029] Based on the above situation, the present application provides quantum dot materials, quantum dot patterning methods, and related devices and apparatuses, which can solve the problem that high-resolution and good-performance quantum dot materials cannot be prepared under the above-mentioned implementation methods.

[0030] The quantum dot material provided in the present application includes: a quantum dot body; and at least one photosensitive group connected to the quantum dot body, the photosensitive group is configured to undergo a cross-linking reaction with a photosensitive group connected to an adjacent quantum dot body; wherein the photosensitive group is a chalcone group. By modifying the photosensitive group on the quantum dot body and configuring the photosensitive group to undergo a cross-linking reaction with a photosensitive group connected to an adjacent quantum dot body, the cross-linking structure formed between different quantum dots can be used to combine two quantum dots together to improve the stability of the quantum dot film layer and the anti-development performance of the retained area, thereby achieving patterning of the quantum dot film layer. Furthermore, by limiting the photosensitive group to a chalcone group, the keto group and the benzene ring can be used to increase the electron cloud density of the carbon-carbon double bond, thereby reducing the energy required for the carbon-carbon double bond to break in the photocross-linking reaction, thereby reducing the probability of damage to the quantum dot body, and then improving the resolution and display effect of the display device.

[0031] To illustrate the specific structure of the quantum dot material of this application, please refer to Figure 1 , Figure 1 It is a structural schematic diagram of an implementation method of the quantum dot material of the present application.

[0032] In this embodiment, the quantum dot material includes a quantum dot body (QD) and at least one photosensitive group connected to the quantum dot body, and the photosensitive group is configured to undergo a cross-linking reaction with a photosensitive group connected to an adjacent quantum dot body.

[0033] The quantum dot material further includes an alkyl chain, and the photosensitive group is connected to the quantum dot body via the alkyl chain. The present application does not limit the length of the alkyl chain.

[0034] The quantum dot body includes quantum dots of predetermined colors, namely red (R) quantum dots, green (G) quantum dots and blue (B) quantum dots.

[0035] The cross-linking reaction may be a reaction between photosensitive groups on quantum dots of the same predetermined color, or a reaction between photosensitive groups on quantum dots of different predetermined colors, which is not limited in the present application.

[0036] In this embodiment, under ultraviolet light irradiation, a cross-linking reaction occurs between the photosensitive groups connecting two adjacent quantum dot bodies to form a cross-linked structure, which can change the solubility of the quantum dot material. After exposure, the quantum dot film is cleaned with a solvent that can dissolve the quantum dot material. The quantum dot material in the unirradiated area is dissolved and removed, while the quantum dot material that forms a cross-linked structure in the irradiated area is insoluble in the solvent, thereby retaining the pattern of the quantum dot film layer.

[0037] In some specific embodiments, the developer may be a n-hexane solution. After the photosensitive groups between two quantum dots form a cross-linked structure, the quantum dot film is cleaned with a n-hexane solution to remove the quantum dot material in the unirradiated area, thereby forming a pattern of the quantum dot film layer.

[0038] It can be understood that by modifying the photosensitive group on the quantum dot body and configuring the photosensitive group to undergo a cross-linking reaction with the photosensitive group connected to the adjacent quantum dot body, the cross-linking structure formed between different quantum dots can be used to combine the two quantum dots together to improve the stability of the quantum dot film layer and the anti-development performance of the retained area, thereby achieving patterning of the quantum dot film layer.

[0039] In this embodiment, the photosensitive group is a chalcone group, and the chalcone group includes a compound represented by Formula 1:

[0040] Formula 1

[0041] Among them, the chalcone group is the product of cross-aldol condensation of aromatic aldehydes and ketones, and the chalcone group includes a carbon-carbon double bond and a ketone group connected by a carbon-carbon single bond, and the carbon-carbon double bond and the ketone group are respectively connected to a benzene ring. Under ultraviolet light, the carbon-carbon double bonds of the two chalcone groups are broken and recombined to form a cross-linked structure with a four-membered ring.

[0042] Specifically, see Figure 2 , Figure 2 It is a schematic diagram of the reaction of two quantum dot materials having chalcone groups in this application.

[0043] In this embodiment, under the irradiation of ultraviolet light with a wavelength of 365 nm, the carbon-carbon double bonds in the chalcone groups in two adjacent quantum dot materials are broken and recombined to form a cross-linked structure with a four-membered ring, and the cross-linked structure is insoluble in the developer.

[0044] The ligands of existing quantum dot materials are generally olefin compounds containing carbon-carbon double bonds. The electron cloud density of the carbon-carbon double bond is low. When a photocross-linking reaction occurs under ultraviolet light, the energy required to break the carbon-carbon double bond is large and the light intensity is high, which may cause the structure of the quantum dot itself to be destroyed, thereby affecting the full-color display effect.

[0045] Different from other embodiments, the carbon-carbon double bond in this embodiment is connected to a ketone group, and the ketone group is a substituent of the benzene ring. The chalcone group formed by the connection between the keto group and the benzene ring can provide electrons for the carbon-carbon double bond and increase the electron cloud density of the carbon-carbon double bond. The greater the electron cloud density on the carbon-carbon double bond, the greater the electrophilic reaction activity, the smaller the energy required for bond breaking, and the faster the reaction rate, thereby reducing the probability of damage to the quantum dot body and thereby improving the full-color display effect.

[0046] In some embodiments, the benzene ring connected to the keto group in the chalcone group is modified with at least one electron-donating group, wherein the electron-donating group is modified at the ortho position and / or para position of the keto group.

[0047] Specifically, the electron-donating group on the benzene ring, as the ortho-para position of the keto group, can increase the electron cloud density of the keto group, thereby enabling the keto group to better provide electrons for the carbon-carbon double bond.

[0048] In this embodiment, the electron donating group can be modified only at the ortho position of the keto group, or only at the para position of the keto group, or at both the ortho and para positions of the keto group. The present application does not limit the specific substitution position and specific number of the electron donating group connected to the benzene ring.

[0049] In this embodiment, the electron donating group includes at least one of a strong electron donating group, a medium electron donating group and a weak electron donating group.

[0050] Among them, strong electron donating groups include dialkylamino (-NR2), alkylamino (-NHR), amino (-NH2), alkoxy (-OR), etc. Medium electron donating groups include amide (-NHCOR), acyloxy (-OCOR), etc. Weak electron donating groups include alkyl (-R), carboxymethyl (-CH2COOH), etc.

[0051] In this embodiment, the number and type of electron-donating groups modified on the multiple chalcone groups may be the same or different, and this application does not limit this.

[0052] In a specific implementation scenario, only one electron donating group is connected to the benzene ring connected to the keto group in the chalcone group, and the electron donating group is arranged at the ortho position of the keto group. In another specific implementation scenario, only one electron donating group is connected to the benzene ring connected to the keto group in the chalcone group, and the electron donating group is arranged at the para position of the keto group. In another specific implementation scenario, two electron donating groups are connected to the benzene ring connected to the keto group in the chalcone group, and the electron donating groups are all arranged at the ortho position of the keto group. In another specific implementation scenario, two electron donating groups are connected to the benzene ring connected to the keto group in the chalcone group, and one electron donating group is arranged at the ortho position of the keto group, and the other electron donating group is arranged at the para position of the keto group. In another specific implementation scenario, three electron donating groups are connected to the benzene ring, which are arranged at the para position and two ortho positions of the keto group respectively.

[0053] Continue reading Figure 1 , three electron-donating groups, R1, R2, and R3, are connected to the benzene ring connected to the ketone group, and R1 and R3 are respectively arranged at the ortho position of the ketone group, and R2 is arranged at the para position of the ketone group. Among them, R1, R2, and R3 can be the same electron-donating group or different electron-donating groups.

[0054] In some embodiments, at least one electron-donating group is connected to the benzene ring connected to the ketone group, and the wavelength of the ultraviolet light can be changed from 365 nm to 405 nm during irradiation.

[0055] It can be understood that since the shorter the wavelength of ultraviolet light, the higher the energy, when the wavelength of ultraviolet light becomes longer, its energy decreases. After satisfying the energy required to break the carbon-carbon double bond, the ultraviolet light causes less damage to the structure of the quantum dot body, thereby reducing the probability of damage to the quantum dot body, and then improving the resolution and display effect of the display device.

[0056] In this embodiment, the quantum dot material further includes other ligand groups connected to the quantum dot body.

[0057] The number of the photosensitive groups is a first value, the sum of the numbers of the photosensitive groups and other ligand groups is a second value, and the ratio of the first value to the second value is any value between 40% and 60%.

[0058] Among them, the remaining ligand groups include sulfate ligands and quenching groups. Sulfate ligands are used to increase the solubility of quantum dot materials, and quenching groups are used to prevent color mixing caused by the residual quantum dot materials emitting light after cleaning, thereby effectively improving the color gamut of quantum dot display.

[0059] Specifically, see Figure 3 , Figure 3Schematic diagram of the structure of the quantum dot body and the alkyl chain connected to the ligand group of the present application. In this embodiment, the quantum dot body is connected to multiple alkyl chains, and is connected to the ligand group through multiple alkyl chains.

[0060] It can be understood that the ratio of the first value to the second value is any value between 40% and 60%, which can not only ensure the solubility and quenching function of the quantum dot material, but also maximize the photolysis performance of the quantum dot material.

[0061] Different from other embodiments, this embodiment modifies at least one photosensitive group on the quantum dot body and configures the photosensitive group to undergo a cross-linking reaction with the photosensitive group connected to the adjacent quantum dot body, and can use the cross-linking structure formed between different quantum dots to combine two quantum dots together to improve the stability of the quantum dot film layer and the anti-development performance of the retained area, thereby achieving patterning of the quantum dot film layer. Furthermore, by limiting the photosensitive group to a chalcone group, the ketone group and the benzene ring can be used to increase the electron cloud density of the carbon-carbon double bond, thereby reducing the energy required for the carbon-carbon double bond to break in the photocross-linking reaction, thereby reducing the probability of damage to the quantum dot body, and then improving the resolution and display effect of the display device.

[0062] Correspondingly, the present application provides a quantum dot patterning method.

[0063] Specifically, see Figure 4 , Figure 4 : is a schematic diagram of a process of an embodiment of a quantum dot patterning method of the present application. In this embodiment, the quantum dot patterning method includes:

[0064] S11: Obtaining quantum dot material; wherein the quantum dot material includes a quantum dot body and at least one photosensitive group connected to the quantum dot body, and the photosensitive group is configured to undergo a cross-linking reaction with a photosensitive group connected to an adjacent quantum dot body; wherein the photosensitive group is a chalcone group.

[0065] In this embodiment, the photosensitive group is connected to the quantum dot body via an alkyl chain, and the application does not limit the length of the alkyl chain.

[0066] The quantum dot body includes quantum dots of predetermined colors, namely red (R) quantum dots, green (G) quantum dots and blue (B) quantum dots.

[0067] In some embodiments, the benzene ring connected to the keto group in the chalcone group is modified with at least one electron-donating group, wherein the electron-donating group is modified at the ortho position and / or para position of the keto group.

[0068] The electron donating group includes at least one of a strong electron donating group, a medium electron donating group and a weak electron donating group.

[0069] In this embodiment, the number and type of electron-donating groups modified on the multiple chalcone groups may be the same or different, and this application does not limit this.

[0070] S12: Obtaining a quantum dot solution based on the quantum dot material.

[0071] In this embodiment, a quantum dot solution is prepared using quantum dot materials and a solvent.

[0072] The solvent may be an oil-soluble solvent such as n-hexane solution or n-octane solution.

[0073] S13: depositing a quantum dot solution on a substrate to form a quantum dot film.

[0074] S14: exposing the quantum dot film to light to cause a photo-crosslinking reaction; wherein the photo-crosslinking reaction includes a crosslinking reaction between chalcone groups connecting two adjacent quantum dot bodies.

[0075] In this embodiment, after the quantum dot film is shielded by a mask, ultraviolet light is used to irradiate the corresponding area of ​​the quantum dot film, so that the chalcone groups in the quantum dot material in the corresponding area are photolyzed to generate a cross-linked structure.

[0076] The wavelength of the ultraviolet light used for exposure is 365nm or 405nm.

[0077] In a specific implementation scenario, the benzene ring connected to the keto group in the chalcone group is not connected to an electron donating group, and the wavelength of the ultraviolet light used for exposure is 365 nm.

[0078] In another specific implementation scenario, at least one electron-donating group is connected to the benzene ring connected to the keto group in the chalcone group, and the wavelength of the ultraviolet light used for exposure is 405 nm.

[0079] It can be understood that in this embodiment, the carbon-carbon double bond of the chalcone group is connected to the keto group, and the keto group is a substituent of the benzene ring. The chalcone group formed by the connection between the keto group and the benzene ring can provide electrons for the carbon-carbon double bond and increase the electron cloud density of the carbon-carbon double bond. The greater the electron cloud density on the carbon-carbon double bond, the greater the electrophilic reaction activity, the smaller the energy required for bond breaking, and the faster the reaction rate, thereby reducing the probability of damage to the quantum dot body, thereby improving the full-color display effect.

[0080] S15: Developing the quantum dot film to form a preset pattern on the quantum dot film layer.

[0081] In this embodiment, a solvent having the same polarity as the quantum dot solution is used to clean the quantum dot film to form clusters of quantum dot film layers.

[0082] In a specific implementation scenario, an oil-soluble solvent such as n-hexane solution or n-octane solution is used as a developer to clean the quantum dot film. The quantum dot material in the unirradiated area is dissolved and removed, while the quantum dot material in the irradiated area forms a cross-linked structure that is insoluble in the developer, thereby retaining the pattern of the quantum dot film layer.

[0083] Different from other embodiments, this embodiment modifies at least one photosensitive group on the quantum dot body and configures the photosensitive group to undergo a cross-linking reaction with the photosensitive group connected to the adjacent quantum dot body, and can use the cross-linking structure formed between different quantum dots to combine two quantum dots together to improve the stability of the quantum dot film layer and the anti-development performance of the retained area, thereby achieving patterning of the quantum dot film layer. Furthermore, by limiting the photosensitive group to a chalcone group, the ketone group and the benzene ring can be used to increase the electron cloud density of the carbon-carbon double bond, thereby reducing the energy required for the carbon-carbon double bond to break in the photocross-linking reaction, thereby reducing the probability of damage to the quantum dot body, and then improving the resolution and display effect of the display device.

[0084] Correspondingly, the present application provides a quantum dot light-emitting device.

[0085] Specifically, see Figure 5 , Figure 5 It is a schematic structural diagram of an embodiment of a quantum dot light-emitting device of the present application.

[0086] In this embodiment, the quantum dot light-emitting device 100 includes a substrate 10, an anode 20, a light-emitting layer 30 and a cathode 40 stacked on the substrate 10 in sequence. The light-emitting layer 30 includes a quantum dot film layer, and the quantum dot film layer is made by the above-mentioned quantum dot patterning method. Among them, the quantum dot material in the quantum dot film layer includes a quantum dot body and at least one photosensitive group connected to the quantum dot body, and the photosensitive group is configured to undergo a cross-linking reaction with a photosensitive group connected to an adjacent quantum dot body. Among them, the photosensitive group is a chalcone group.

[0087] In some embodiments, a hole transport layer is disposed between the anode 20 and the light-emitting layer 30 , and an electron transport layer is disposed between the cathode 40 and the light-emitting layer 30 .

[0088] Correspondingly, the present application provides a display device, comprising the above-mentioned quantum dot light-emitting device.

[0089] Different from other embodiments, the present application modifies the photosensitive group on the quantum dot body and configures the photosensitive group to undergo a cross-linking reaction with the photosensitive group connected to the adjacent quantum dot body, and can use the cross-linking structure formed between different quantum dots to combine two quantum dots together to improve the stability of the quantum dot film layer and the anti-development performance of the reserved area, thereby achieving patterning of the quantum dot film layer. Furthermore, by limiting the photosensitive group to a chalcone group, the ketone group and the benzene ring can be used to increase the electron cloud density of the carbon-carbon double bond, thereby reducing the energy required for the carbon-carbon double bond to break in the photocross-linking reaction, thereby reducing the probability of damage to the quantum dot body, and then improving the resolution and display effect of the display device.

[0090] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A quantum dot material, characterized in that: include: Quantum dot body; as well as, At least one photosensitive group is connected to the quantum dot body, and the photosensitive group is configured to undergo a cross-linking reaction with the photosensitive group connected to the adjacent quantum dot body; Wherein, the photosensitive group is a chalcone group.

2. The quantum dot material according to claim 1, characterized in that The chalcone group includes: a keto group; and, a benzene ring connected to the keto group; Wherein, the benzene ring is modified with at least one electron-donating group.

3. The quantum dot material according to claim 1, characterized in that The chalcone group includes compounds represented by Formula 1: Wherein, the chalcone group is the product of cross-aldol condensation of aromatic aldehydes and ketones; Preferably, the benzene ring connected to the keto group in the chalcone group is modified with at least one electron donating group.

4. The quantum dot material according to claim 2, characterized in that: The electron donating group is modified at the ortho position and / or para position of the keto group.

5. The quantum dot material according to claim 2, characterized in that: The electron donating group includes at least one of a strong electron donating group, a medium electron donating group and a weak electron donating group.

6. The quantum dot material according to claim 1, characterized in that: The quantum dot material also includes: Other ligand groups are connected to the quantum dot body; The number of the photosensitive groups is a first value, the sum of the number of the photosensitive groups and the number of the other ligand groups is a second value, and the ratio of the first value to the second value is any value between 40% and 60%.

7. A quantum dot patterning method, characterized in that: include: A quantum dot material is obtained; wherein the quantum dot material comprises a quantum dot body and at least one photosensitive group connected to the quantum dot body, and the photosensitive group is configured to undergo a cross-linking reaction with the photosensitive group connected to an adjacent quantum dot body; wherein the photosensitive group is a chalcone group; Obtaining a quantum dot solution based on the quantum dot material; Depositing the quantum dot solution on a substrate to form a quantum dot film; Exposing the quantum dot film to light to cause a photo-crosslinking reaction; wherein the photo-crosslinking reaction includes a crosslinking reaction between the chalcone groups connected to two adjacent quantum dot bodies; The quantum dot film is developed to form a preset pattern on the quantum dot film layer.

8. The quantum dot patterning method according to claim 7, characterized in that: The step of exposing the quantum dot film to light to cause a photo-crosslinking reaction comprises: The quantum dot film is irradiated with ultraviolet light to cause the photo-crosslinking reaction; wherein the wavelength of the ultraviolet light is 365nm or 405nm.

9. A quantum dot light-emitting device, comprising a substrate, an anode, a light-emitting layer and a cathode sequentially stacked on the substrate, wherein the light-emitting layer comprises a quantum dot film layer, characterized in that: The quantum dot film layer is made by the quantum dot patterning method described in any one of claims 7 to 8; wherein the quantum dot material in the quantum dot film layer includes a quantum dot body and at least one photosensitive group connected to the quantum dot body, and the photosensitive group is configured to undergo a cross-linking reaction with the photosensitive group connected to an adjacent quantum dot body; wherein the photosensitive group is a chalcone group.

10. A display device, characterized in that: Comprising a quantum dot light emitting device as described in claim 9.

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