Heating device and processing equipment

Abstract

The embodiment of the invention relates to a heating device and processing equipment. The heating device comprises a heating cavity, at least one heating piece and at least one cooling piece. The heating cavity is provided with a containing space used for containing materials. The heating cavity is provided with a soaking part which is used for uniformly transferring heat along the surface of the heating cavity. The heating piece is arranged on the side, away from the containing space, of the soaking part. The heating piece comprises a conductive core, the conductive core is used for heating materials after being electrified, and the conductive core is made of silicon carbide. The cooling part is arranged on the soaking part and used for cooling the materials.

Description

Technical Field

[0001] The present application relates to the technical field of photovoltaic material processing, and in particular to a heating device and processing equipment. Background Art

[0002] Vacuum high temperature industrial chambers play a vital role in the semiconductor industry. They are widely used and irreplaceable. Vacuum high temperature industrial chambers provide the necessary conditions and guarantees for the manufacturing and processing of semiconductor devices by providing high temperature, vacuum environment and other specific requirements. As we all know, the heating device is the core equipment of the vacuum high temperature industrial chamber. However, the heating devices currently used in vacuum high temperature industrial chambers have problems such as slow heating response speed and poor temperature control effect. Summary of the invention

[0003] In a first aspect, the present application provides a heating device. The heating device comprises:

[0004] The heating cavity has a containing space for placing materials, and the heating cavity is provided with a heat-averaging portion, which is used to evenly transfer heat along its surface;

[0005] at least one heating element, disposed on a side of the heat-averaging portion away from the accommodation space, the heating element comprising a conductive core, the conductive core being used to heat the material after being energized, the conductive core being made of silicon carbide; and

[0006] At least one cooling element is disposed on the heat-averaging portion to cool the material.

[0007] In the heating device of the embodiment of the present application, the heat-sparing part is intended to transfer heat evenly along its surface. This design can ensure uniform heat distribution during the heating process, avoiding the problems of low heating efficiency and inaccurate temperature control caused by uneven heat distribution in traditional heating devices. The uniform heat transfer of the heat-sparing part enables the material in the entire heating cavity to reach the required temperature at a faster speed, thereby improving the heating response speed. In addition, silicon carbide is used as the material of the conductive core in the heating element. Silicon carbide has excellent thermal conductivity and high temperature resistance, which enables the conductive core to quickly heat up and transfer heat to the material in a short time, thereby shortening the heating response time. Moreover, the thermal stability of silicon carbide also helps to maintain a stable temperature during the heating process, thereby improving the temperature control effect. Furthermore, the heating device is also equipped with a cooling element, and the cooling element is arranged on the heat-sparing part for quickly cooling the material when necessary. This design enables the material to cool down quickly after the heating process is completed, further improving the response speed of the entire heating device. In addition, the cooling element can also be used in conjunction with the heating element during the heating process to help accurately control the temperature of the material, thereby further optimizing the temperature control effect.

[0008] In summary, the heating device effectively solves the technical problems of slow heating response speed and poor temperature control effect through the uniform heat transfer of the heat-averaging part, the rapid heating characteristics of the silicon carbide conductive core and the rapid cooling function of the cooling part.

[0009] In some embodiments, the heating chamber includes a plurality of side walls connected in sequence, the plurality of side walls enclose a containing space, the plurality of side walls form a heat-distributing portion, the material of the heat-distributing portion is silicon carbide with an oxidized surface; a plurality of heating elements are arranged on the side of each side wall facing away from the containing space; and a cooling element is arranged on each side wall.

[0010] In some embodiments, the conductive core is rod-shaped; the conductive core includes a first end, a second end and a middle section, the first end and the second end are opposite and spaced apart, the middle section is located between the first end and the second end, and connects the first end and the second end; the outer side surfaces of the first end and the second end are both provided with a conductive layer, the material of the conductive layer is metal, and the conductive layer is used to be electrically connected to a power source; the outer side surface of the middle section is provided with an insulating layer, and the insulating layer is used to be electrically insulated from the heating cavity.

[0011] In some embodiments, the insulating layer is a silicon oxide layer, or the insulating layer comprises a silicon oxide layer and a glaze layer, wherein the glaze layer is located on a side of the silicon oxide layer facing away from the conductive core.

[0012] In some embodiments, the size of the conductive core gradually decreases in a direction from the first end to the second end.

[0013] In some embodiments, the cooling member includes a cooling channel, an inlet and an outlet; the cooling channel is embedded in the heat-averaging portion and is bent in a serpentine shape; the inlet and the outlet are respectively connected to opposite ends of the cooling channel and both expose the heat-averaging portion; the cooling channel is used for the cooling medium to flow through, the inlet is used for introducing the cooling medium, and the outlet is used for discharging the cooling medium.

[0014] In some embodiments, the heating device also includes a clip and an electrode seat, the clip is installed on the electrode seat and electrically connected to the electrode seat, and the electrode seat is used to be electrically connected to a power source; the heating element is elastically clipped to the clip and electrically connected to the electrode seat through the clip.

[0015] In some embodiments, the buckle includes a fixing portion and a holding portion, the fixing portion is connected to the electrode holder, the holding portion is connected to the fixing portion, and together with the fixing portion, forms a slot for holding the heating element. The holding portion can generate elastic deformation under the impact of the heating element so that the heating element can be inserted into or removed from the slot.

[0016] In some embodiments, the electrode seat includes a seat body and a silicon oxide layer. The seat body is made of silicon carbide. The seat body is in contact with the buckle. The silicon oxide layer is formed on the surface of the seat body and avoids the buckle.

[0017] In some embodiments, the heating chamber includes four side walls connected in sequence, and the four side walls enclose a accommodating space with a rectangular cross-section; the four side walls constitute components of the heat-averaging portion; there are four groups of heating elements, and the number of heating elements in each group of heating elements is at least two, and the four groups of heating elements are arranged in a one-to-one correspondence with the four side walls; there are four electrode seats, and the four electrode seats are respectively located at the four corners of the heating chamber; each electrode seat includes two connected side surfaces, and each side surface is provided with a plurality of clips installed at intervals, and the opposite ends of each heating element in each group of heating elements are respectively installed on two adjacent electrode seats by a clip, and different groups of heating elements are respectively installed on the two side surfaces of the same electrode seat.

[0018] In some embodiments, the heating device further comprises a radiation reflection screen, which is located on a side of the heating element facing away from the accommodating space, and is used to reflect the heat radiated by the heating element toward the side where the heat uniformizing portion is located.

[0019] In some embodiments, the radiation reflection screen is spaced apart from the heating element, and the radiation reflection screen comprises a silicon carbide layer with an oxidation-treated surface, and a surface of the silicon carbide layer facing the heating element is a polished mirror surface.

[0020] In some embodiments, the radiation reflection screen also includes a thermal insulation layer, which is located on the side of the silicon carbide layer away from the heating element; the surface of the thermal insulation layer in contact with the silicon carbide layer includes a convex surface and a concave surface connected in sequence, the convex surface is in contact with the silicon carbide layer, and there is a gap between the concave surface and the silicon carbide layer.

[0021] The second aspect of the present application provides a processing device. The processing device includes a vacuum cavity and the heating device provided in the first aspect of the present application. The vacuum cavity is used to form a vacuum cavity, the air pressure of the vacuum cavity is lower than the atmospheric pressure, and the heating device is located in the vacuum cavity.

[0022] The processing equipment of the second aspect of the present application has at least the same advantages as the heating device provided in the first aspect of the present application, which will not be described in detail. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic structural diagram of a heating device according to an embodiment of the present application.

[0024] Figure 2 for Figure 1 Schematic diagram of the structure of the heating element.

[0025] Figure 3 for Figure 2 Schematic cross-section along line III-III.

[0026] Figure 4 for Figure 3 A local enlarged schematic diagram of point IV in the middle.

[0027] Figure 5for Figure 1 Schematic diagram of the structure of the medium radiation reflection screen.

[0028] Figure 6 for Figure 5 Side view of the medium radiation reflector.

[0029] Figure 7 for Figure 6 A partial enlarged schematic diagram of point VII in the middle.

[0030] Figure 8 for Figure 1 Schematic diagram of the structure of the heating chamber.

[0031] Fig. 9 for Figure 8 Schematic diagram of the distribution of cooling components in the heating chamber.

[0032] Fig.10 for Figure 8 Schematic diagram of the cross section along line XX.

[0033] Fig.11 for Figure 1 Schematic diagram of the structure of the middle buckle.

[0034] Fig.12 for Figure 1 Schematic diagram of the structure of the middle electrode holder.

[0035] Explanation of the main component symbols: 100, heating device; 10, heating element; 10a, first end; 10b, second end; 11, conductive core; 12, conductive layer; 13, insulating layer; 20, radiation reflection screen; 21, silicon carbide layer; 22, thermal insulation layer; 30, heating cavity; 40, buckle; 41, fixing part; 42, holding part; 50, electrode seat; 50a, first side; 50b, second side; 50c, third side; 50d, end face; 60, cooling element; R, accommodating space. DETAILED DESCRIPTION

[0036] Figure 1 1 is a schematic diagram of the structure of a heating device 100 according to an embodiment of the present application. The heating device 100 can be applied to processing equipment. The processing equipment can be, but is not limited to, diffusion equipment, oxidation equipment, dry cleaning equipment, plasma enhanced chemical vapor deposition (PECVD) equipment, cross-section passivation equipment, low pressure chemical vapor deposition (LPCVD) equipment, atomic layer deposition (ALD) equipment, ion implantation equipment, etc.

[0037] like Figure 1 As shown, the heating device 100 includes a plurality of heating elements 10 , a plurality of radiation reflection screens 20 , a heating cavity 30 , a plurality of buckles 40 and a plurality of electrode holders 50 .

[0038] Specifically, the heating cavity 30 has a receiving space R for placing materials.

[0039] The heating cavity 30 is a hollow rectangular parallelepiped with two ends open. Specifically, the heating cavity 30 includes four side walls connected in sequence, and the four side walls enclose a receiving space R with a rectangular cross section.

[0040] In a specific application scenario, the rectangular accommodating space R is adapted to a carrier that carries square sheets (such as silicon wafers for preparing solar cells), with less invalid space, which is conducive to improving space utilization.

[0041] In other embodiments, the shape of the accommodation space R is not limited thereto. For example, the accommodation space R is substantially circular.

[0042] The plurality of heating elements 10 are arranged at intervals with the heating cavity 30. The plurality of heating elements 10 are divided into four groups. The number of heating elements 10 in each group of heating elements 10 is at least two. The four groups of heating elements 10 are arranged in a one-to-one correspondence with the four side walls of the heating cavity 30. That is, a group of heating elements 10 is arranged on the side of each side wall of the heating cavity 30 that faces away from the accommodation space R. The heating elements 10 are as close to the heating cavity 30 as possible, so that the heat energy generated by the heating elements 10 can be more effectively transferred to the heating cavity 30, thereby reducing the temperature gradient in the accommodation space R.

[0043] The radiation reflection screen 20 is located on a side of the plurality of heating elements 10 away from the accommodation space R and is spaced apart from the plurality of heating elements 10. The radiation reflection screen 20 is used to reflect the heat radiated by the heating elements 10 toward the side where the heating cavity 30 is located, so that the heat transfer direction and the heat are concentrated on and inside the heating cavity 30.

[0044] In this embodiment, there are four radiation reflective screens 20. The four radiation reflective screens 20 correspond one-to-one to the four groups of heating elements 10, and each radiation reflective screen 20 is located on a side of a corresponding group of heating elements 10 away from the accommodation space R. In addition, each side wall of the heating cavity 30 corresponds to a radiation reflective screen 20.

[0045] In some embodiments, the heating chamber 30 is provided with a heat-spreading portion, which is used to evenly transfer heat along its surface. The heat-spreading portion is made of silicon carbide with an oxidized surface.

[0046] In this embodiment, the heating chamber 30 is used as a heat-sparing part as a whole. That is, the heating chamber 30 is made of silicon carbide with an oxidation treatment on the surface. The four side walls of the heating chamber 30 all constitute the components of the heat-sparing part. In this way, the corrosion resistance and oxidation resistance of the heating chamber 30 can be enhanced, and it can be adapted to harsh working environments.

[0047] In other embodiments, a part of the heating cavity 30 is used as a heat-averaging part, that is, a part of the heating cavity 30 is made of silicon carbide with an oxidized surface.

[0048] In other embodiments, the number of the heating element 10 is at least one, and at least one heating element 10 is disposed on a side of the heat-dissipating portion away from the accommodating space R.

[0049] In other embodiments, the shape of the heating cavity 30 is not limited to the above, for example, the heating cavity 30 may be circular. It is understandable that when the shape and size of the heating cavity 30 are adapted to the shape and size of the accommodation space R, it is beneficial to miniaturize the heating device 100.

[0050] Each heating element 10 is mounted on the electrode holder 50 through the buckle 40 and is electrically connected to the electrode holder 50. The electrode holder 50 is used to be electrically connected to a power source.

[0051] Specifically, a plurality of buckles 40 are mounted on each electrode holder 50. Each buckle 40 is conductive. The opposite ends of each heating element 10 are elastically snapped onto a buckle 40 and electrically connected to the corresponding buckle 40. Among them, the surface of the electrode holder 50 that is in direct contact with the buckle 40 is conductive, and the surface of the electrode holder 50 that is not in direct contact with the buckle 40 is insulated. Voltage is applied through the electrode holder 50 to energize and generate heat for the heating element 10 on the buckle 40. In this embodiment, there are four electrode holders 50, and the four electrode holders 50 are respectively located at the four corners of the heating chamber 30. The opposite ends of each heating element 10 are respectively mounted on different electrode holders 50 through a buckle 40, and different groups of heating elements 10 are respectively mounted on the same electrode holder 50.

[0052] It should be noted that when the heating device 100 is applied to the above-mentioned processing equipment, the processing equipment includes a vacuum chamber, and the heating device 100 is located in the vacuum chamber as a whole. The material to be processed (such as a silicon wafer to be diffused, a silicon wafer to be cleaned, or a silicon wafer to be coated) is placed in the heating chamber 30, and the material is processed after the vacuum degree in the vacuum chamber and the temperature at which the heating device 100 heats the material meet the required process requirements.

[0053] Figure 2 for Figure 1 The structural diagram of the heating element 10 is shown in FIG. Figure 2As shown, the heating element 10 includes a conductive core 11 made of silicon carbide. The conductive core 11 generates heat after being energized to heat the material in the containing space R.

[0054] Specifically, the conductive core 11 of the heating element 10 includes a first end 10a, a second end 10b and a middle section. The first end 10a and the second end 10b are arranged opposite to each other and spaced apart. The middle section is located between the first end 10a and the second end 10b, and connects the first end 10a and the second end 10b. The heating element 10 also includes two conductive layers 12 and an insulating layer 13. The outer side surfaces of the first end 10a and the second end 10b are both provided with the conductive layer 12, and the outer side surface of the middle section of the conductive core 11 is provided with the insulating layer 13. The conductive layer 12 is used to be electrically connected to a power source, and the insulating layer 13 is used to be electrically insulated from the heating cavity 30.

[0055] More specifically, after the heating element 10 is snapped onto the buckle 40, the two conductive layers 12 are in direct contact with the buckle 40 and are electrically connected. Thus, the conductive layers 12 at both ends of the heating element 10 can be used to transfer current to the conductive core 11 in the middle section, thereby achieving heating of the entire heating element 10. In addition, the provision of the insulating layer 13 is also conducive to avoiding the risk of current leakage and short circuit in the middle section of the heating element 10, thereby improving the safety of the heating device 100.

[0056] In some embodiments, two conductive layers 12 of the heating element 10 are obtained by plating metal layers at both ends of the entire silicon carbide rod, but the invention is not limited thereto. In addition, the heat distribution of the heating rod can be customized to meet specific heating requirements by controlling the position and size of the conductive layer 12 and the insulating layer 13.

[0057] In some embodiments, the insulating layer 13 is obtained by performing surface oxidation on the middle section of the entire silicon carbide rod to obtain a silicon oxide layer, and then forming a glaze on the silicon oxide layer. That is, the insulating layer 13 includes a stack of a silicon oxide layer obtained by surface oxidation of silicon carbide and a glaze layer, and the glaze layer is located on the side of the silicon oxide layer away from the conductive core 11. Therefore, the silicon oxide layer of the middle section itself has good insulation properties, and the addition of the glaze layer further enhances the insulation, while also protecting the silicon oxide layer from physical damage.

[0058] Figure 3 for Figure 2 Schematic diagram of the cross section along line III-III. Figure 3As shown, the size of the conductive core 11 gradually decreases in the direction from the first end 10a to the second end 10b. That is, the conductive core 11 of the heating element 10 adopts a rod-shaped shape with large and small heads. Therefore, compared with the cylindrical heating element of the same specification, the conductive core 11 of the heating element 10 adopts a rod-shaped shape with large and small heads, which is beneficial to improve the mechanical structural advantages such as bending strength, preventing thermal stress concentration, increasing rigidity, and reducing weight, and thus helps to avoid damage to the structure of the heating element 10 itself. When the temperature changes, the displacement caused by radial deformation is decomposed into partial axial movement, reducing the distance change between the heating cavity 30 and avoiding uneven thermal field and reduced stability.

[0059] Figure 4 for Figure 3 Please refer to the partial enlarged diagram of IV in the figure. Figure 3 and Figure 4 , the thickness of the conductive layer 12 on the conductive core 11 gradually increases from the first end 10a to the second end 10b. Thus, the gradually increasing thickness of the conductive layer 12 can help balance the current density and prevent excessive current density from being concentrated at one end of the conductive core 11, thereby avoiding overheating and local damage.

[0060] Figure 5 for Figure 1 The structural diagram of the radiation reflection screen 20 is shown in FIG. Figure 5 As shown, the radiation reflection screen 20 includes a silicon carbide layer 21 with an oxidation treatment on the surface. Specifically, the radiation reflection screen 20 can be connected and fixed to the wall of the vacuum chamber of the processing equipment, and avoid being connected or contacted with the plurality of heating elements 10.

[0061] Please refer to Figure 1 and Figure 5 The surface of the silicon carbide layer 21 facing the plurality of heating elements 10 is a polished mirror surface. Thus, by providing a polished mirror surface on the silicon carbide layer 21, the reflectivity can be significantly improved, which is conducive to achieving a more uniform heat distribution. In addition, due to the smoothness of the polished mirror surface, it is also conducive to reducing the formation of local hot spots and cold spots.

[0062] The radiation reflection screen 20 further includes a heat preservation layer 22, which is located on the side of the silicon carbide layer 21 away from the plurality of heating elements 10. This helps to avoid heat leakage and maintain a high temperature inside the heating device 100.

[0063] In some embodiments, the thermal insulation layer 22 may be made of a high temperature resistant thermal insulation material (such as graphite felt), but is not limited thereto.

[0064] Figure 6 for Figure 5 A side view of the radiation reflective screen 20. Figure 7 for Figure 6 The local enlarged schematic diagram of VII in the figure. Figure 6 and Figure 7 As shown, the surface of the thermal insulation layer 22 that is in direct contact with the silicon carbide layer 21 is uneven. Specifically, the surface of the thermal insulation layer 22 that is in direct contact with the silicon carbide layer 21 includes a convex surface and a concave surface connected in sequence, the convex surface is in contact with the silicon carbide layer, and there is a gap between the concave surface and the silicon carbide layer 21. As a result, the contact area between the thermal insulation layer 22 and the silicon carbide layer 21 is reduced as much as possible, the thermal resistance and thermal isolation are further increased, the temperature gradient difference between the reflective surface of the radiation reflective screen 20 and the outermost side of the back of the radiation reflective screen 20 is increased, the heat leakage to the outside is reduced, and the heat conduction is prevented from being dispersed and unconcentrated, ensuring high heating efficiency, high heating rate, and precise temperature control.

[0065] Figure 8 for Figure 1 The schematic diagram of the structure of the heating chamber 30 is shown in FIG. Figure 8 As shown, a cooling element 60 is embedded in the side wall of the heating chamber 30 to cool the material. Thus, the heating chamber 30 can achieve rapid cooling of the internal environment or the material while protecting against overheating. The proportional-integral-derivative (PID) controller can be used to more accurately control the temperature, meet the temperature requirements of different processes, and improve process flexibility.

[0066] Fig. 9 for Figure 8 Schematic diagram of the distribution of the cooling element 60 in the heating chamber 30. Fig. 9 As shown, an independent cooling element 60 is embedded in each of the four side walls of the heating chamber 30. Thus, the cooling medium (such as water) flowing into the cooling element 60 in each side wall can be independently controlled to solve the possible heat accumulation problem of each side wall in a targeted manner, thereby improving the flexibility of the process and avoiding the energy waste caused by comprehensive cooling. Moreover, if a problem occurs in the cooling element 60 in a side wall, it can be maintained or replaced separately without affecting the operation of the overall system, thereby reducing the complexity and cost of maintenance work.

[0067] Specifically, the cooling member 60 can be formed by embedding metal tubes in the four side walls of the heating cavity 30. Since the metal tube has good thermal conductivity, it means that heat can be quickly conducted through the metal tube and taken away by the cooling medium, thereby effectively reducing the temperature of the heating cavity 30. Moreover, the cooling member 60 made of metal material has high durability and can withstand high working pressure, which is conducive to meeting the use environment of the heating device 100 in vacuum and ultra-high vacuum.

[0068] Fig.10 for Figure 8 Schematic diagram of the cross section along line XX. Fig.10As shown, the cooling member 60 includes a cooling channel, an inlet and an outlet. The cooling channel is completely embedded in the side wall of the heating cavity 30. The inlet and the outlet are respectively connected to the opposite ends of the cooling channel and are both exposed to the heating cavity 30. The cooling channel is used to flow a cooling medium, the inlet is used to introduce the cooling medium, and the outlet is used to discharge the cooling medium.

[0069] The cooling channel is serpentine-shaped in the side wall of the heating cavity 30. Thus, the serpentine-shaped design can significantly increase the surface area of ​​the cooling element 60 in contact with the side wall of the heating cavity 30, provide more heat exchange area, and thus improve the cooling efficiency. Moreover, the serpentine design extends the flow path of the cooling medium in the channel, so that the cooling medium has a longer time and more opportunities to absorb heat from the side wall, thereby improving the cooling performance and the uniformity of temperature control. In other embodiments, the number and distribution of the cooling element 60 are not limited to the above. Specifically, the number of the cooling element 60 is at least one, and the at least one cooling element 60 is arranged on the heat-averaging portion of the heating cavity 30.

[0070] Fig.11 for Figure 1 The structure diagram of the middle buckle 40 is shown in FIG. Fig.11 As shown, the buckle 40 includes a fixing portion 41 and a holding portion 42 connected to the fixing portion 41. The fixing portion 41 is used to connect with the electrode holder 50. The fixing portion 41 and the holding portion 42 together enclose a slot for holding the heating element 10. The holding portion 42 can generate elastic deformation under the push-up action of the heating element 10, so that the heating element 10 can be inserted into or removed from the slot.

[0071] Specifically, the fixing portion 41 is in the shape of a flat plate to ensure the stability of the installation of the buckle 40 and the electrode holder 50. The cross section of the heating element 10 is circular, and the cross section of the buckle 40 is roughly circular to match the heating element 10. Therefore, the shape of the buckle 40 is conducive to fixing the heating element 10 while increasing the contact area between the two to withstand a larger current.

[0072] In addition, the buckle 40 can be integrally formed through sheet metal processing so that its structure has greater elasticity. When the temperature changes, the buckle 40 can undergo elastic deformation to avoid damage to the heating element 10 caused by thermal stress. It is also beneficial for the buckle 40 and the heating element 10 to always maintain good contact, avoid circuit breaks or poor contact, and ensure the continuity, uniformity and stability of heating.

[0073] In some embodiments, the fixing portion 41 can be fixed to the electrode holder 50 by means of screws or sintering bonding. Specifically, the fixing portion 41 is fixed to the electrode holder 50 by means of screws, which provides mechanical stability, ensures that the connection strength between the fixing portion 41 and the electrode holder 50 is high, can resist vibration and impact, and prevent loosening. Moreover, the screw fixing method is convenient for disassembly and replacement of the buckle 40 when necessary. The method in which the fixing portion 41 is fixed to the electrode holder 50 by sintering bonding provides a tighter and longer-term fixation through material fusion, which is particularly suitable for environments subjected to high temperatures or chemical corrosion.

[0074] In some embodiments, the material of the buckle 40 is a high temperature resistant and conductive metal material. Specifically, the material of the buckle 40 can be, but is not limited to, molybdenum, tungsten-rhenium and molybdenum-rhenium alloy, PtRel4 alloy, inconle alloy, and the like.

[0075] In some embodiments, considering the economy, the buckle 40 can be made of high-temperature resistant metal material plus an external high-temperature resistant conductive material coating (such as molybdenum coating, platinum coating, graphene coating, titanium nitride coating, rhenium coating, tungsten carbide coating, etc.), so that it can still maintain superior material properties at high temperatures.

[0076] Fig.12 for Figure 1 The structure diagram of the middle electrode holder 50 is shown in FIG. Figure 1 and Fig.12 The electrode holder 50 is in a strip shape. The electrode holder 50 includes three side faces and two end faces 50d. Specifically, the three side faces are a first side face 50a, a second side face 50b, and a third side face 50c. The first side face 50a, the second side face 50b, and the third side face 50c are connected in sequence. The end face 50d is connected to the first side face 50a, the second side face 50b, and the third side face 50c.

[0077] Multiple buckles 40 are installed at intervals on the first side surface 50a and the second side surface 50b. The opposite ends of each heating element 10 in each group of heating elements 10 are respectively installed on two adjacent electrode holders 50 through a buckle 40, and different groups of heating elements 10 are respectively installed on the first side surface 50a and the second side surface 50b of the same electrode holder 50.

[0078] The first side surface 50 a and the second side surface 50 b are both substantially rectangular, so that the first side surface 50 a and the second side surface 50 b can provide more area for installing the buckle 40 .

[0079] The third side surface 50c is an arc surface. The third side surface 50c of each electrode holder 50 corresponds to an edge of the heating chamber 30. Each edge is rounded. The matching of the third side surface 50c and the edge of the heating chamber 30 helps to achieve a more compact and smooth joint, reduce space waste, and make it more harmonious and beautiful visually.

[0080] The two sides of the end face 50d connecting the first side face 50a and the second side face 50b are substantially perpendicular, and the end face 50d is approximately an equilateral right triangle. Thus, the strip structure of the electrode holder 50 and the equilateral right triangle design of the end face 50d provide additional mechanical strength, help resist physical impact and environmental pressure, and extend the service life.

[0081] In some embodiments, the electrode holder 50 is made of silicon carbide with a partial surface oxidized. Specifically, the electrode holder 50 can be obtained by oxidizing the surface of the silicon carbide except the surface where the buckle 40 is installed. That is, the surface of the electrode holder 50 that is in direct contact with the buckle 40 is conductive silicon carbide, and the surface of the remaining surface is a silicon oxide layer that has been surface oxidized. In other words, the electrode holder 50 includes a seat body and a silicon oxide layer. The seat body is made of silicon carbide, and the seat body is in direct contact with the buckle 40. The silicon oxide layer is formed on the surface of the seat body and avoids the buckle 40. Therefore, in addition to fixing and supporting the heating element 10 and acting as a conductive seat, the electrode holder 50 also generates heat due to the passage of current itself, thereby making the thermal field more uniform.

[0082] It should be noted that, in the current technology, the heating device 100 for the vacuum high-temperature industrial chamber mainly has the following forms and disadvantages.

[0083] First, resistance heating is currently the most widely used form of heating, but resistance heating may be limited by electromagnetic interference and conductive materials, has high energy consumption, its life is affected by temperature, and it is easily aged by dust and other factors.

[0084] Second, induction heating. The equipment cost of induction heating is usually high, the requirements for the working environment are relatively strict, there are certain requirements for the electromagnetic properties of the material, and the use and maintenance require high technical requirements.

[0085] Third, radiation heating has the directionality of energy transmission and poor heating uniformity. It has high requirements on the surface of the target object and is not suitable for all heating scenarios. Part of the energy will be absorbed or reflected by the surrounding environment, and the efficiency is low.

[0086] Fourth, laser heating. Laser heating equipment is expensive, complex, and requires high skills from the operator. In addition, the stability of the optical path needs to be maintained during the laser processing process, which places high demands on the environment.

[0087] Specifically, in vacuum high-temperature industrial chambers, the most commonly used form of heating is resistance heating, among which linear resistance wire heating is the most widely used form. However, resistance wires are susceptible to mechanical damage, which limits the shape of the heating area. Resistance wire heating is easily affected by factors such as material resistivity variation and thermal expansion caused by excessive temperature, and has a limited service life.

[0088] In addition, resistance wire heating usually requires high energy consumption. In related technologies, in the fields of coating PECVD, LPCVD, ALD, doping diffusion, ion implantation, and heat treatment, because there are many types of chamber gas components, in order to avoid chemical corrosion in the process atmosphere affecting the surface of the resistance wire heating, it is necessary to add armor of corresponding materials, which further reduces the heat transfer efficiency, and also makes the manufacturing process complicated, the cost of use is high, the installation technology is difficult, the maintenance is difficult, the shape and size are limited, the heating response speed is slow, the armored resistance heating wire is easy to be damaged by thermal deformation, the heating stability is poor at high temperature, and the temperature field uniformity is poor during heating.

[0089] In the heating device 100 of the embodiment of the present application, one or more of the heating element 10, the radiation reflection screen 20, the heating cavity 30 and the electrode holder 50 contain components made of silicon carbide, and a cooling element 60 is embedded in the heating cavity 30. Since silicon carbide has the characteristics of high melting point, excellent thermal conductivity, low density, low thermal expansion coefficient, low gas release rate, corrosion-resistant material, etc., and can be heated to a higher temperature, the thermal deformation is small. Moreover, the heating rod has a conical structure, which is conducive to decomposing and reducing the displacement, greatly reducing the heat source caused by thermal deformation and the displacement of the heating cavity 30, heating is uniform and stable, and the temperature is precisely controlled.

[0090] In addition, the provision of the radiation reflective screen 20 makes the heat transfer direction and heat concentrated on and inside the heating cavity 30, and an insulation layer 22 is provided on the side of the silicon carbide layer 21 of the radiation reflective screen 20 that is away from the heating cavity 30, which is beneficial to further improve the thermal resistance between the insulation layer 22 and the silicon carbide layer 21, minimize unnecessary heat leakage to the outside, and have higher heating efficiency, good thermal field stability, lower energy consumption, and energy saving and environmental protection.

[0091] In addition, the heating element 10 and the buckle 40 are installed and fixed in an elastic manner, which is beneficial to avoid damage caused by thermal stress concentration and extend the service life. During thermal deformation, the two always maintain good contact and maintain stable power supply to avoid circuit breakage or poor contact, thereby ensuring the heating power stability, heating continuity, uniformity and stability of the target area, and ensuring that the heater works stably and reliably in a vacuum environment.

[0092] Moreover, the heating device 100 of the embodiment of the present application adopts an independent structure of the heating module, which is small in size, light in weight, and easy to install and disassemble. It is suitable for occasions with limited space, easy to manufacture, and low in maintenance cost, which is conducive to solving technical difficulties such as inconvenient installation and high maintenance cost of other heating devices 100.

[0093] In summary, the heating device 100 of the embodiment of the present application is compatible with ultra-high temperature (such as 1500°C), high vacuum and ultra-high vacuum, and complex gas environments, which is conducive to solving the technical difficulties of rapid heating and cooling of the target area in the range of room temperature to ultra-high temperature, uniform and stable heating, and precise temperature control. It has the advantages of uniform temperature field, good high-temperature stability, lower energy consumption, energy saving and environmental protection, and longer service life.

[0094] The embodiment of the present application also provides a processing device (not shown). The processing device includes a vacuum cavity and the above-mentioned heating device 100. The vacuum cavity is used to form a vacuum cavity, and the air pressure of the vacuum cavity is lower than the atmospheric pressure. The heating device 100 is located in the vacuum cavity.

[0095] As described above, the processing equipment may be, but is not limited to, diffusion equipment, oxidation equipment, dry cleaning equipment, PECVD equipment, cross-section passivation equipment, LPCVD equipment, ALD equipment, ion implantation equipment, etc.

[0096] The above implementation modes are only used to illustrate the technical solutions of the present application and are not intended to limit the present application. Although the present application has been described in detail with reference to the above preferred implementation modes, a person skilled in the art should understand that the technical solutions of the present application may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present application.

Claims

1. A heating device, characterized in that: include: A heating cavity has a containing space for placing materials, and the heating cavity is provided with a heat-averaging portion, and the heat-averaging portion is used to evenly transfer heat along its surface; At least one heating element is disposed on a side of the heat-averaging portion away from the accommodating space, the heating element comprises a conductive core, the conductive core is used to heat the material after being energized, and the conductive core is made of silicon carbide; as well as At least one cooling member is disposed on the heat-averaging portion to cool the material.

2. The heating device according to claim 1, characterized in that The heating cavity comprises a plurality of side walls connected in sequence, the plurality of side walls enclose the accommodation space, the plurality of side walls form the heat-distributing portion, and the material of the heat-distributing portion is silicon carbide with an oxidized surface; A plurality of the heating elements are arranged on a side of each of the side walls facing away from the accommodating space; and a cooling element is arranged on each of the side walls.

3. The heating device according to claim 1, characterized in that The conductive core is in the shape of a rod; The conductive core comprises a first end, a second end and a middle section, the first end and the second end are arranged opposite to each other and spaced apart, the middle section is located between the first end and the second end, and connects the first end and the second end; The outer side surfaces of the first end and the second end are both provided with a conductive layer, the conductive layer is made of metal, and the conductive layer is used to be electrically connected to a power source; An insulating layer is provided on the outer side of the middle section, and the insulating layer is used for electrically insulating from the heating cavity.

4. The heating device according to claim 3, characterized in that The insulating layer is a silicon oxide layer, or the insulating layer comprises a silicon oxide layer and a glaze layer, wherein the glaze layer is located on a side of the silicon oxide layer away from the conductive core.

5. The heating device according to claim 3, characterized in that: In a direction from the first end to the second end, a size of the conductive core gradually decreases.

6. The heating device according to claim 1, characterized in that The cooling element comprises a cooling channel, an inlet and an outlet; The cooling channel is embedded in the heat-averaging portion and is bent in a serpentine shape; The inlet and the outlet are respectively connected to opposite ends of the cooling channel and both expose the heat-averaging portion; The cooling channel is used for a cooling medium to flow through, the inlet is used for introducing the cooling medium, and the outlet is used for discharging the cooling medium.

7. The heating device according to claim 1, characterized in that The heating device further comprises a buckle and an electrode seat, wherein the buckle is mounted on the electrode seat and electrically connected to the electrode seat, and the electrode seat is used to be electrically connected to a power source; The heating element is elastically snapped onto the buckle and is electrically connected to the electrode holder via the buckle.

8. The heating device according to claim 7, characterized in that The buckle includes a fixing portion and a holding portion, the fixing portion is connected to the electrode seat, the holding portion is connected to the fixing portion, and together with the fixing portion, forms a slot for holding the heating element, and the holding portion can produce elastic deformation under the pushing action of the heating element so that the heating element can be inserted into or removed from the slot.

9. The heating device according to claim 7, characterized in that The electrode seat comprises a seat body and a silicon oxide layer. The seat body is made of silicon carbide. The seat body is in contact with the buckle. The silicon oxide layer is formed on the surface of the seat body and avoids the buckle.

10. The heating device according to claim 7, characterized in that The heating cavity comprises four side walls connected in sequence, and the four side walls enclose the accommodation space with a rectangular cross section; The four side walls all constitute components of the heat equalizing portion; The heating elements are provided in four groups, each group of the heating elements has at least two heating elements, and the four groups of the heating elements are provided in one-to-one correspondence with the four side walls; There are four electrode seats, and the four electrode seats are respectively located at four corners of the heating cavity; Each of the electrode seats includes two connected side surfaces, and a plurality of the clips are installed at intervals on each of the side surfaces. The opposite ends of each heating element in each group of the heating elements are respectively installed on two adjacent electrode seats through a clip, and different groups of heating elements are respectively installed on the two side surfaces of the same electrode seat.

11. The heating device according to any one of claims 1 to 10, characterized in that The heating device further comprises a radiation reflection screen, which is located on a side of the heating element away from the accommodating space, and is used for reflecting the heat radiated by the heating element toward a side where the heat equalizing portion is located.

12. The heating device according to claim 11, characterized in that The radiation reflection screen is spaced apart from the heating element. The radiation reflection screen comprises a silicon carbide layer whose surface is oxidized. The surface of the silicon carbide layer facing the heating element is a polished mirror surface.

13. The heating device according to claim 12, characterized in that The radiation reflection screen further comprises a heat-insulating layer, and the heat-insulating layer is located on a side of the silicon carbide layer away from the heating element; The surface of the thermal insulation layer in contact with the silicon carbide layer includes a convex surface and a concave surface connected in sequence, the convex surface is in contact with the silicon carbide layer, and there is a gap between the concave surface and the silicon carbide layer.

14. A processing equipment, characterized in that: include: A vacuum chamber, used to form a vacuum chamber, wherein the air pressure of the vacuum chamber is lower than the atmospheric pressure; as well as The heating device according to any one of claims 1 to 13 is located in the vacuum chamber.

Images