Deposition apparatus

Abstract

The invention discloses a deposition apparatus. The deposition equipment comprises an equipment main body, a slide glass boat and a heating piece. The equipment body is provided with a process cavity. The substrate carrying boat is detachably installed in the process cavity, and the substrate carrying boat is used for carrying the stacked substrates and covering at least one side of the stacked substrates. The heating element is mounted on the equipment main body, is opposite to at least one surface of the slide boat and is arranged at an interval, an airflow channel for process gas to flow through is formed between the heating element and the slide boat, and the heating element is used for heating at least one side surface, not covered by the slide boat, of the substrate. In this way, the passivation efficiency of the edge of the substrate can be improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a deposition device. Background Art

[0002] In the semiconductor field, a whole substrate can be cut into half or multiple small substrates. The surface after cutting has serious surface defects, and surface treatment is required to reduce the charge recombination of the cut surface. In the related art, the surface defects after cutting are improved by heating the stacked substrates and then coating them for passivation. However, the related equipment heats the entire substrate. If the cut surface needs to be heated to the process temperature, a long preheating and heat conduction process is required. Summary of the invention

[0003] An embodiment of the present application provides a deposition device that can improve the efficiency of substrate edge passivation.

[0004] An embodiment of the present application provides a deposition device. The deposition device includes a device body, a wafer boat and a heating element. The device body has a process chamber. The wafer boat can be detachably installed in the process chamber, and the wafer boat is used to carry stacked substrates and to cover at least one side of the stacked substrates. The heating element is installed in the device body, opposite to and spaced from at least one side of the wafer boat, and an air flow channel for process gas to flow through is formed between the heating element and the wafer boat, and the heating element is used to heat at least one side of the substrate that is not covered by the wafer boat.

[0005] Optionally, a plurality of wafer boats are arranged in the process chamber, a plurality of heating elements are arranged, and the air flow channels formed by the plurality of wafer boats and the plurality of heating elements are arranged in series or in parallel;

[0006] Wherein, each wafer boat is provided with at least one heating element;

[0007] And / or, every two wafer boats share one heating element.

[0008] Optionally, the heating elements are arranged at intervals in the process chamber, and installation cavities for installing wafer boats are formed between the heating elements; the wafer boats are detachably installed in the installation cavities.

[0009] Optionally, two adjacent wafer boats constitute a process group, and the two wafer boats in a process group are arranged opposite to each other on one side for covering the substrate, and the sides of the two wafer boats facing away from the covering substrate are arranged opposite to the heating elements on both sides of the process group respectively.

[0010] Optionally, one process group is disposed between two adjacent heating elements that are spaced apart, and the adjacent process groups share the heating element between the two process groups.

[0011] Optionally, the deposition device further comprises a door body, which is used to close the process chamber, and a spray plate is arranged on the door body, and the spray plate is arranged corresponding to the air flow channel.

[0012] Optionally, a plurality of wafer boats are arranged in the process chamber, a plurality of heating elements are arranged in the process chamber, a plurality of air flow channels are formed with the wafer boats and the heating elements, and a plurality of spray plates are arranged corresponding to the air flow channels.

[0013] Optionally, the spray plate is convexly arranged on a side of the door body facing the process chamber, and when the door body closes the process chamber, the spray plate is embedded in the air flow channel.

[0014] Optionally, in the direction of gravity, the door body is arranged above the process chamber, a function board is arranged below the process chamber, an air outlet channel is arranged below the function board, and the function board is used to support the wafer boat and connect the air flow channel with the air outlet channel.

[0015] Optionally, the spray plate has at least two groups of gas outlet arrays and at least two spray channels respectively connected to the gas outlet arrays, the at least two spray channels are used to connect to different gas sources respectively, and the at least two groups of gas outlet arrays are used to spray different process gases respectively; air inlets are formed at both ends of each spray channel, and the air inlets are connected to the gas source through a pipeline or through the equipment body.

[0016] The beneficial effects of the present application are as follows: Different from the prior art, by arranging the heating element and the wafer carrier boat opposite and spaced apart, the heating element can heat the surface of the substrate that needs to be coated. Through the airflow channel formed between the heating element and the wafer carrier boat, the process gas can flow more through the surface of the substrate that needs to be coated, reducing the process gas flowing to other parts of the process chamber. In this way, the time required for heating the surface of the substrate that needs to be coated can be reduced, and the process gas passing through the surface of the substrate that needs to be coated can be increased to reduce the occurrence of the plating bypass problem. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a schematic diagram of an exploded structure of an embodiment of a deposition device of the present application;

[0018] Figure 2 yes Figure 1 The structural schematic diagram of the deposition device shown in the AA section;

[0019] Figure 3 yes Figure 1 The schematic structural diagram of the deposition device shown in the BB section;

[0020] Figure 4 yes Figure 1 A schematic diagram of the structure of the door body and the shower plate of the deposition equipment shown;

[0021] Figure 5 yes Figure 4 The structural schematic diagram of the spray plate shown;

[0022] Figure 6 yes Figure 5 Schematic diagram of the cross-sectional structure of different spray channels and different spray arrays in the spray plate shown.

[0023] Reference numerals:

[0024] Deposition equipment, 1; equipment body, 11; door body, 12; spray plate, 121; spray channel, 1211; gas outlet array, 1212; wafer boat, 13; heating element, 14; air flow channel, 15; installation cavity, 16; functional board, 17; support plate, 171; flow plate, 172; gas outlet channel, 18; block, 19; substrate, 2. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0026] In the field of semiconductor technology, such as photovoltaics, a whole cell (i.e., substrate, or solar cell) can be cut into half or multiple small cells. Small cells have the characteristics of high component voltage. Generally, laser cutting is used to cut the substrate, and the cut surface forms a bare surface. However, the surface of bare silicon has many defects and serious charge recombination on the surface of bare silicon, which affects the life of minority carriers and thus affects the efficiency of the cell, and further affects the power generation of the component.

[0027] In the related art, the cut surface is passivated with a passivation film such as aluminum oxide or silicon nitride after laser cutting of the finished battery, thereby reducing the charge recombination of the cut surface. Generally, the cut surface is passivated by laminating, stacking the cut substrates together and placing them in a laminating tool to deposit the coating on the cut surface.

[0028] The equipment in the related art usually coats the entire surface of the substrate. Since the thin film needs to be deposited on all surfaces of the substrate, the substrate needs to be heated as a whole. To ensure the uniformity of heating, the heating devices need to be evenly arranged around the cavity. At the same time, the substrate needs to be exposed to the process gas as a whole and be in uniform and sufficient contact with the gas source. After research by the inventor, the equipment in the related art has the following technical problems.

[0029] First, the thermal field problem. Under traditional process conditions, the coating surface is the entire surface of the substrate, and the cavity heating needs to heat the entire surface of the substrate to be coated. Therefore, the current cavity heating components are distributed around the cavity. Due to the increase in the number of substrates caused by the stacking, the traditional surrounding heating mode greatly reduces the heat transfer efficiency of the stacking, the heating time is long, and the coating end surface needs to be heated unevenly, resulting in poor quality of the deposited film.

[0030] Second, the problem of wrapping plating. The heating elements are distributed around the cavity, heating all the substrates in the entire stack. The heat conduction to the inside of the stack is more likely to cause wrapping plating problems, and the gas can enter everywhere. Wrapping plating on the solder joints of the substrate will cause the problem of cold solder joints at the component end.

[0031] Third, the problem of chip sticking. The heating elements are distributed around the cavity, and heating the entire substrate will cause chip sticking. After the coating is completed, the stacked sheets are not easy to separate and the substrate is easily broken.

[0032] Fourth, the problem of airflow field. When the whole surface is coated in the traditional process, the substrate or the wafer boat needs to be exposed to the airflow as a whole, which cannot meet the requirements of selective coating of substrate edge passivation. If the wafer boat is placed directly in the existing cavity, the airflow sprayed by the spray plate will cause flow field turbulence under the influence of the wafer boat, and the cut surface will be exposed to the turbulent flow field, resulting in poor uniformity of the deposited film quality.

[0033] In order to improve the above technical problems, the present application may provide the following embodiments.

[0034] Combination Figures 1 to 3 , an embodiment of the present application provides a deposition device 1. The deposition device 1 includes a device body 11, a wafer boat 13 and a heating element 14. The device body 11 has a process chamber, which can be used to support and accommodate the wafer boat 13, and isolate its internal components from the external air to ensure the purity of the reaction environment during coating.

[0035] The wafer boat 13 can be detachably mounted on the process chamber, and the wafer boat 13 is used to carry the stacked substrates 2 and to cover at least one side of the stacked substrates 2. The wafer boat 13 can cover one side, two sides, three sides or more sides of the substrate 2. The scheme described in the present application is to selectively coat the cut side of the substrate 2. The cut surface of the substrate 2 can be one side, two sides, three sides or more sides. The wafer boat 13 can cover at least one side of the substrate 2 that does not need to be coated, thereby reducing the process gas from flowing through the surface that does not need to be coated, and reducing the occurrence of bypass plating problems. Among them, one wafer boat 13 can only carry one group of stacked substrates 2, and a partition can be provided in one wafer boat 13, with multiple accommodating cavities separated, so as to carry multiple groups of stacked substrates 2.

[0036] The heating element 14 is mounted on the equipment body 11, opposite to at least one side of the wafer boat 13 and spaced apart. The heating element 14 is used to heat at least one side of the substrate 2 that is not covered by the wafer boat 13, and the heating element 14 can centrally heat the surface of the substrate 2 that needs to be coated. An air flow channel 15 for process gas to flow through is formed between the heating element 14 and the wafer boat 13, and the process gas can directly flow through the surface of the substrate 2 that needs to be coated through the air flow channel 15. The heating element 14 can form the air flow channel 15 while heating the substrate 2. Optionally, the heating element 14 is arranged in a plate shape, and the heating element 14 has a sufficient heating area to perform targeted heating on the wafer boat 13. The heating element 14 can be resistance heating, electromagnetic heating or infrared heating, which is not specifically limited here.

[0037] In some embodiments, a plurality of wafer boats 13 are provided in the process chamber, a plurality of heating elements 14 are provided, and the gas flow channels 15 formed by the plurality of wafer boats 13 and the plurality of heating elements 14 are arranged in series or in parallel. The wafer boats 13 can be arranged in a variety of ways. The gas flow channels 15 formed by adjacent wafer boats 13 and heating elements 14 can be arranged in series. The process gas can flow through the gas flow channels 15 in the arrangement direction of the wafer boats 13 in sequence. The gas flow channels 15 formed by adjacent wafer boats 13 and heating elements 14 can be arranged in parallel, and the process gas can enter the plurality of gas flow channels 15 at the same time. Optionally, the gas flow channels 15 can also be connected in parallel and then in series.

[0038] Among them, each wafer boat 13 is provided with at least one heating element 14. Each wafer boat 13 can be provided with at least one heating element 14, so as to centrally heat the wafer boat 13. Alternatively, two wafer boats 13 can share one heating element 14. In other words, the same heating element 14 can correspond to two wafer boats 13, and heat the two wafer boats 13 at the same time. Optionally, the two wafer boats 13 are respectively arranged on both sides of the heating element 14. The two wafer boats 13 can be symmetrically arranged with the heating element 14 as the axis of symmetry, and the heating element 14 can heat the wafer boats 13 on both sides at the same time. The heating element 14 can form air flow channels 15 with the wafer boats 13 on both sides respectively. The targeted heating of the substrate 2 by the heating element 14 can improve the efficiency of coating, so that the surface that needs to be coated can reach the process temperature faster, thereby achieving the technical effect of improving production capacity.

[0039] In some embodiments, the deposition device 1 includes a plurality of heating elements 14, and the heating elements 14 are arranged at intervals in the process chamber. An installation cavity 16 for installing the wafer boat 13 is formed between the heating elements 14. The wafer boat 13 can be detachably installed in the installation cavity 16. For example, the number of heating elements 14 can be three, which are arranged at intervals in the process chamber to form two installation cavities 16. Among them, two installation cavities 16 can install two wafer boats 13, and the heating elements 14 can heat both sides of the wafer boat 13 respectively. The two installation cavities 16 can also install multiple wafer boats 13, and the multiple wafer boats 13 can be arranged in sequence along the spacing direction of the heating elements 14, and the multiple wafer boats 13 can also be arranged in sequence along the length direction of the heating elements 14. Adjacent wafer boats 13 can be arranged in sequence in the same or opposite directions according to the number of surfaces of the substrate 2 that need to be coated.

[0040] Specifically, in some embodiments, in combination Figure 1 and Figure 2 Two adjacent wafer boats 13 constitute a process group, and the two wafer boats 13 in a process group are arranged opposite to each other on one side for covering the substrate 2, that is, the two wafer boats 13 are arranged opposite to each other on the one side for covering the substrate 2. The sides of the two wafer boats 13 that are away from the substrate 2 they cover are arranged opposite to the heating elements 14 on both sides of the process group. In this way, the wafer boats 13 can be arranged relatively densely in the installation cavity 16, saving space in the process cavity.

[0041] In some embodiments, a process group is arranged between two adjacent heating elements 14 arranged at intervals, and the adjacent process groups share the heating element 14 between the two process groups. In the above manner, on the one hand, by arranging the two wafer boats 13 in the process group to face in opposite directions, the space occupied by the wafer boats 13 can be reduced, so that the arrangement of the wafer boats 13 can be relatively concentrated and relatively independent. On the other hand, by arranging the adjacent process groups to share the same heating element 14, the utilization rate of the heating element 14 can be improved, and the number of heating elements 14 that need to be arranged can be reduced, thereby further saving space in the process chamber.

[0042] In other embodiments, openings are provided on opposite sides of the wafer boat 13 to expose the surface of the substrate 2 that needs to be coated. A baffle is provided in the wafer boat 13, which can divide the accommodating cavity of the wafer boat 13 into two parts with openings facing opposite directions. The wafer boat 13 can be used to accommodate at least two groups of stacked substrates 2. The stacked substrates 2 can be located on both sides of the baffle. The baffle can cover the side of the substrate 2 that does not need to be coated. The unmasked surface can be passivated by heating and coating.

[0043] In some embodiments, the deposition device 1 further includes a door body 12, which is used to close the process chamber. A spray plate 121 is provided on the door body 12, and the spray plate 121 is provided corresponding to the air flow channel 15. The spray plate 121 can introduce the process gas into the air flow channel 15 evenly and in parallel, thereby meeting the process conditions required for coating.

[0044] Further, in some embodiments, a plurality of wafer boats 13 are provided in the process chamber. A plurality of heating elements 14 are provided in the process chamber. The wafer boat 13 and the heating elements 14 form a plurality of air flow channels 15. A plurality of spray plates 121 are provided correspondingly to the air flow channels 15, respectively. By providing a plurality of spray plates 121 correspondingly to the air flow channels 15, respectively, the process gas can be introduced into different air flow channels 15. In other words, by providing a plurality of spray plates 121 in communication with the air flow channels 15, the air flow channels 15 can be connected in parallel with each other.

[0045] In some embodiments, the shower plate 121 is convexly disposed on the side of the door body 12 facing the process chamber, and when the door body 12 closes the process chamber, the shower plate 121 is embedded in the air flow channel 15. The shower plate 121 is embedded in the air flow channel 15 to introduce the process gas more directly into the air flow channel 15, so that the heater 14 and the wafer boat 13 can seal the gas introduction of the shower plate 121, thereby reducing the gaps of the heater 14 or the gaps of the wafer boat 13 through which the process gas flows, and reducing the occurrence of the plating-around phenomenon.

[0046] In some embodiments, in combination Figure 2 and Figure 3In the direction of gravity, the door body 12 is arranged above the process cavity, and the opening of the process cavity faces upward. A functional board 17 is also arranged below the process cavity, and an outlet channel 18 is also arranged below the functional board 17. The functional board 17 is used to support the carrier boat 13 and connect the airflow channel 15 with the outlet channel 18. The outlet channel 18 can be connected to a negative pressure pump, and the negative pressure pump can extract the gas in the airflow channel 15 through the outlet channel 18, thereby playing a role in vacuuming or promoting the uniform flow of process gas. The functional board 17 can support one side of the carrier boat 13. Through the abutment of the functional board 17 and the carrier boat 13, different airflow channels 15 can be isolated, thereby reducing the cross-flow of process gases in different process channels. The functional board 17 can be a single-layer board, and a connecting hole connecting the airflow channel 15 and the outlet channel 18 is arranged at a position corresponding to the airflow channel 15 on the functional board 17. The portion of the functional board 17 corresponding to the carrier boat 13 can abut against the carrier boat 13 to support the carrier boat 13. The functional board 17 may also include multiple layers, for example, the functional board 17 includes a support plate 171 and a flow equalizer plate 172. The support plate 171 is connected to the equipment body 11, and can be used to support the wafer boat 13 and the heater 14. The setting position of the support plate 171 corresponds to the wafer boat 13 and the heater 14. Among them, the heater 14 can be set in the equipment body 11 and directly supported by the equipment body 11. The heater 14 can be set in the process chamber and supported by the support plate 171. The support plate 171 will not block the flow of the process gas. The flow equalizer plate 172 is arranged below the process chamber, and the process gas discharged from the air flow channel 15 can enter the gas outlet channel 18 via the flow equalizer plate 172. The flow equalizer plate 172 can increase the uniformity of the process gas flow, thereby improving the coating quality. In other embodiments, the opening of the process chamber is facing the horizontal direction. In some embodiments, the flow equalizer plates 172 are provided with multiple layers, and the flow equalizer holes are provided on the flow equalizer plates 172 . The flow equalizer holes on the flow equalizer plates 172 of two adjacent layers are staggered.

[0047] For example Figure 2 In some embodiments, a spacer 19 is provided between the functional board 17 and the wafer boat 13. The spacer 19 can adjust the height of the wafer boat 13 so that the wafer boat 13 is more adaptable to the device body 11, and the air flow channel 15 can be closer to the air intake shower plate 121, so that the intake of the process gas is more uniform and parallel.

[0048] Combination Figures 4 to 6In some embodiments, the spray plate 121 has at least two groups of gas outlet arrays 1212 and at least two spray channels 1211 connected to the gas outlet arrays 1212. At least two spray channels 1211 are used to connect different gas sources respectively, and at least two groups of gas outlet arrays 1212 are used to spray different process gases respectively, so that different types of process gases can be introduced into the gas flow channel 15 according to process requirements. An air inlet is formed at both ends of each spray channel 1211, and the air inlet is connected to the gas source through a pipeline or through the equipment body 11. The air intake at both ends of the spray channel 1211 can increase the uniformity of the air intake of the spray plate 121. Optionally, each group of gas outlet arrays 1212 includes a plurality of gas outlet pipes with gas outlet holes. Adjacent gas outlet pipes belong to different gas outlet arrays 1212. In other words, the gas outlet pipes in the two gas outlet arrays 1212 are staggered.

[0049] In some embodiments, the spray channels 1211 of the multiple spray plates 121 connected to the same gas source can be connected to each other, so that the intake air can be uniformly adjusted. Optionally, the spray channels 1211 of the multiple spray plates 121 can be independently connected to the gas source, so that the intake air of each spray plate 121 can be individually adjusted according to process requirements.

[0050] Below Figures 1 to 3 The structure shown in the figure is used to introduce the present application scheme as a whole. Figures 1 to 3 A plurality of heating elements 14 are arranged in the process chamber at intervals, for example, three heating elements 14 are shown in the figure, and the three heating elements 14 can form two installation chambers 16. A plurality of process groups can be placed in the installation chambers 16 respectively. Figures 1 to 3 As shown, two process groups can be placed. Each process group includes at least two wafer boats 13 arranged back to back. The two wafer boats 13 close to the center share the heating element 14 in the middle for heating, while the two wafer boats 13 far from the center are heated by the heating elements 14 on both sides respectively. The wafer boats 13 and the heating elements 14 respectively form air flow channels 15, and the door body 12 is provided with a plurality of spray plates 121 embedded in the air flow channels 15. Four wafer boats 13 and three heating elements 14 form four air flow channels 15. Four spray plates 121 are respectively embedded in the four air flow channels 15. The structure formed by the process groups and the heating elements 14 can be symmetrically arranged.

[0051] In summary, the solution proposed in the present application can meet the needs of new edge passivation applications and other selective end face coating needs. By setting a wafer boat 13 to cover at least one side of the substrate 2, and setting a heating element 14 opposite to the unmasked side, the cut surface or edge surface of the passivated substrate 2 can be selectively and specifically heated. Through selective regional heating, only the cut surface / edge surface of the substrate 2 that needs to be coated is quickly heated. In this way, firstly, the thermal utilization rate of the deposition setting can be improved, focusing on heating the places that need to be coated. Secondly, the deposition device 1 proposed in the present application has a better heat conduction effect, especially for stacked substrates 2, because the heat conduction starts from the cross-section that needs to be coated.

[0052] Furthermore, the technical solution proposed in this application can also reduce the problem of wrapping plating. Temperature is one of the important conditions for the coating reaction. Since heat conduction is from the cut surface of the substrate 2 to other surfaces of the substrate 2 (for example, heat conduction from the side to the front and back), the deposition rate on the front and back of the substrate 2 is relatively low, thereby reducing the occurrence of wrapping plating problems.

[0053] The technical solution proposed in the present application can also solve the problem of adhesion of the laminate after heating. The problem of adhesion of the front and back sides of the substrate 2 can be solved by rapidly heating the cut surface of the substrate 2 to avoid excessive temperature of other parts.

[0054] In order to solve the problem that the wafer boat 13 affects the flow field, the present application arranges the spray plate 121, the wafer boat 13, and the heating element 14 in a spatially symmetrical manner so that the gas sprayed by the spray plate 121 only passes near the surface of the substrate 2 that needs to be coated, thereby avoiding the turbulence of the airflow and preventing the disordered diffusion of the airflow, thereby reducing the coating on the front and back sides of the substrate 2. In addition, the spray plate 121 is only arranged in the area where the substrate 2 needs to be coated, which improves the utilization rate of the gas, reduces the gas consumption, and greatly simplifies the spray structure compared to the coating of the entire substrate. The overall structure of the device has also become more compact.

[0055] The above are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A deposition device, characterized in that: include: The equipment body has a process cavity; A wafer boat, detachably mounted on the process chamber, the wafer boat is used to carry the stacked substrates and to cover at least one side of the stacked substrates; A heating element is installed on the equipment body, opposite to and spaced from at least one side of the wafer carrier boat, and an air flow channel for process gas to flow through is formed between the heating element and the wafer carrier boat. The heating element is used to heat at least one side of the substrate that is not covered by the wafer carrier boat.

2. The deposition device according to claim 1, characterized in that: A plurality of wafer boats are arranged in the process chamber, a plurality of heating elements are arranged, and the air flow channel formed by the plurality of wafer boats and the plurality of heating elements is arranged in series or in parallel; Wherein, each of the wafer boats is provided with at least one corresponding heating element; Alternatively, every two wafer boats share one heating element.

3. The deposition device according to claim 1 or 2, characterized in that: The deposition equipment comprises a plurality of the heating elements, which are arranged in the process chamber at intervals, and an installation cavity for installing the wafer boat is formed between the heating elements; the wafer boat can be detachably installed in the installation cavity.

4. The deposition device according to claim 3, characterized in that: Two adjacent wafer boats constitute a process group. The two wafer boats in a process group are arranged opposite to each other for covering one side of the substrate. The sides of the two wafer boats facing away from covering the substrate are arranged opposite to the heating elements on both sides of the process group.

5. The deposition device according to claim 4, characterized in that: One process group is arranged between two adjacent heating elements that are arranged at an interval, and the adjacent process groups share the heating element between the two process groups.

6. The deposition device according to claim 1, characterized in that: The deposition device further includes a door body, which is used to close the process chamber. A spray plate is arranged on the door body, and the spray plate is arranged corresponding to the air flow channel.

7. The deposition device according to claim 6, characterized in that: A plurality of wafer boats are arranged in the process chamber, a plurality of heating elements are arranged in the process chamber, a plurality of air flow channels are formed between the wafer boat and the heating elements, and a plurality of shower plates are arranged corresponding to the air flow channels.

8. The deposition device according to claim 6, characterized in that: The spray plate is convexly arranged on a side of the door body facing the process chamber, and when the door body closes the process chamber, the spray plate is embedded in the air flow channel.

9. The deposition device according to claim 6, characterized in that: In the direction of gravity, the door body is arranged above the process chamber, a function board is arranged below the process chamber, an air outlet channel is arranged below the function board, and the function board is used to support the wafer boat and connect the air flow channel with the air outlet channel.

10. The deposition device according to claim 6, characterized in that: The spray plate has at least two groups of gas outlet arrays and at least two spray channels respectively connected to the gas outlet arrays, at least two of the spray channels are used to connect to different gas sources respectively, and at least two groups of the gas outlet arrays are used to spray different process gases respectively; each of the spray channels is formed with air inlets at both ends, and the air inlets are connected to the gas source through a pipeline or through the equipment body.

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