Photoetching machine and light source array adjusting method

Abstract

The invention discloses a photoetching machine and a light source array adjustment method, and the method is used for obtaining a to-be-photoetched target photoetching pattern, determining a parallel light distribution shape control algorithm according to the target photoetching pattern, and controlling a UV parallel light source to generate UV parallel light. The array spatial light modulator is controlled to shape the distribution shape of the incident UV parallel light according to a parallel light distribution shape control algorithm to form a target preliminary shaping light beam, and the incident target preliminary shaping light beam is shaped according to a mask plate to form a target secondary shaping light beam; and controlling a focus lens to focus the incident target secondary shaping light beam to form a target exposure light beam corresponding to the target photoetching pattern. According to the invention, the distribution shape of the target light can be accurately output by the photoetching machine.

Description

Technical Field

[0001] The present application relates to the technical field of photolithography machines, and in particular to a photolithography machine and a method for adjusting a light source array. Background Art

[0002] The compound eye lenses of traditional lithography machines are divided into two types: single-row compound eye lenses and double-row separated compound eye lenses. According to the conservation of optical extension, the light path of the single-row compound eye array after collimation has a certain divergence angle, which makes the divergence angle emitted from the compound eye lens much larger than the theoretical design field of view requirement of the focusing mirror, which is equivalent to the problem that the extra field of view light is stray light. The double-row separated compound eye lens has an assembly process that requires high alignment accuracy of the front and rear rows of compound eyes, which is prone to problems such as color deficiency and edge deficiency. In addition, most traditional compound eye lenses use a single lens bonded together to form the entire compound eye. The gap between the lens units is large, and part of the light is lost after the light source passes through the front compound eye lens, which reduces the uniformity of the light and makes it impossible to accurately output the distribution shape of the target light. Summary of the invention

[0003] The embodiments of the present application provide a method, device, storage medium and electronic device for adjusting a photolithography machine and a light source array, which can enable the photolithography machine to accurately output the distribution shape of the target light.

[0004] In a first aspect, an embodiment of the present application provides a lithography machine, comprising:

[0005] A UV parallel light source, wherein the UV parallel light source is used to generate UV parallel light;

[0006] An arrayed spatial light modulator, wherein the arrayed spatial light modulator is used to shape the distribution shape of the incident UV parallel light to form a preliminary shaped light beam;

[0007] A mask plate, wherein the mask plate is used to shape the distribution shape of the incident primary shaped light beam to form a secondary shaped light beam;

[0008] A focusing mirror, which is used to focus the secondary shaped light beam to form an exposure light beam;

[0009] A processor, wherein the processor is respectively connected to the UV parallel light source, the arrayed spatial light modulator and the focusing lens, and the processor is used to:

[0010] Acquire a target photolithography pattern to be photolithographically processed;

[0011] Determining a parallel light distribution shape control algorithm according to the target lithography pattern;

[0012] Controlling the UV parallel light source to generate target UV parallel light;

[0013] Controlling the arrayed spatial light modulator to shape the distribution shape of the incident target UV parallel light to form a target preliminary shaped light beam according to the parallel light distribution shape control algorithm;

[0014] shaping the incident target primary shaped light beam according to the mask plate to form a target secondary shaped light beam;

[0015] The focusing mirror is controlled to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern.

[0016] In a second aspect, an embodiment of the present application further provides a method for adjusting an arrayed light source of a lithography machine, which is applied to a lithography machine, wherein the lithography machine includes a UV parallel light source for generating UV parallel light, an arrayed spatial light modulator for shaping the distribution shape of the incident UV parallel light to form a preliminary shaped light beam, a mask for shaping the distribution shape of the incident preliminary shaped light beam to form a secondary shaped light beam, and a focusing mirror for focusing the secondary shaped light beam to form an exposure light beam, wherein the method includes:

[0017] Acquire a target photolithography pattern to be photolithographically processed;

[0018] Determining a parallel light distribution shape control algorithm according to the target lithography pattern;

[0019] Controlling the UV parallel light source to generate target UV parallel light;

[0020] Controlling the arrayed spatial light modulator to shape the distribution shape of the incident target UV parallel light to form a target preliminary shaped light beam according to the parallel light distribution shape control algorithm;

[0021] shaping the incident target primary shaped light beam according to the mask plate to form a target secondary shaped light beam;

[0022] The focusing mirror is controlled to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern.

[0023] An embodiment of the present application provides an arrayed fly-eye lens composed of an arrayed spatial light modulator. By replacing the traditional fly-eye lens with the arrayed spatial light modulator and controlling the distribution shape of the incident UV parallel light through a parallel light distribution shape control algorithm determined according to a target photolithography pattern to be photolithographic, the photolithography machine can accurately output the target light, which is also the target exposure light beam, so that the target exposure pattern corresponding to the target photolithography pattern can be accurately generated. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 Schematic diagram of application scenarios of the arrayed transmissive liquid crystal spatial light modulator provided in an embodiment of the present application.

[0026] Figure 2 Schematic diagram of application scenarios of the arrayed reflective liquid crystal spatial light modulator provided in an embodiment of the present application.

[0027] Figure 3 Schematic diagram of application scenarios of the arrayed digital micromirror device spatial light modulator provided in an embodiment of the present application.

[0028] Figure 4 A first flow chart of the method for adjusting the array light source of a lithography machine provided in an embodiment of the present application. DETAILED DESCRIPTION

[0029] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0030] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0031] The present application provides a lithography machine, which may include a UV parallel light source, and the UV parallel light source is used to generate UV parallel light.

[0032] The lithography machine may further include an arrayed spatial light modulator, which is used to adjust the distribution shape, especially the edge shape, of the incident UV parallel light to form a preliminary shaped light beam.

[0033] An arrayed fly-eye lens composed of an arrayed spatial light modulator proposed in an embodiment of the present application is obtained by replacing a traditional fly-eye lens with an arrayed spatial light modulator. Unlike a traditional fly-eye lens which is formed by pasting lens units together, a traditional fly-eye lens has a large unit gap, partial light loss after passing through the fly-eye lens, reduced light uniformity, and an inability to accurately output the distribution shape of the target light.

[0034] Since the arrayed spatial light modulator provided in the present application has a compact structure, each modulation unit has a size of only micro-nano level, and the gap between the modulation units is much smaller than the size of the modulation unit itself, the light loss after passing through the arrayed spatial modulator is greatly reduced, the light uniformity is improved, and the distribution shape of the target light is accurately output by controlling the on-off, energy, phase and power of the parallel light through an algorithm. Among them, the specific control principle for controlling the distribution shape of the parallel light is that the arrayed spatial light modulator controls each independent thin-film liquid crystal transistor array under the control algorithm of the parallel light distribution shape, and the liquid crystal crystal is rotated under voltage control to realize the change of the parallel light path. It should be noted that the independent thin-film liquid crystal transistor array corresponds to the modulation unit of the arrayed spatial light modulator.

[0035] The photolithography machine may further include a mask plate, and the mask plate is used to shape the distribution shape of the incident primary shaped light beam to form a secondary shaped light beam.

[0036] The mask plate shaping the distribution shape of the incident secondary shaped light beam specifically means that the mask plate shapes the optical path profile of the primary shaped light beam to form a secondary shaped light beam.

[0037] The lithography machine may further include a focusing mirror, and the focusing mirror is used to focus the secondary shaped light beam to form an exposure light beam.

[0038] Among them, the fly-eye lens of the lithography machine provided in the embodiment of the present application includes the arrayed spatial light modulator and the focusing mirror.

[0039] It should be noted that the exposure beam can be received by a wafer. The surface of the wafer is coated with a photoresist to be exposed so that a desired pattern is formed on the surface of the photoresist. The wafer refers to a silicon wafer used to make silicon semiconductor integrated circuits using a photolithography machine, and the wafer is used to receive the exposure beam and generate a corresponding exposure pattern.

[0040] The lithography machine may also include devices such as a processor and a memory. The processor may be used to process various operations of the lithography machine. The processor and the memory are integrated on a circuit board. The processor is respectively connected to the UV parallel light source, the arrayed spatial light modulator and the focusing mirror.

[0041] The processor is the control center of the lithography machine. It uses interfaces and lines to connect the various parts of the entire lithography machine. It executes various functions of the lithography machine and processes data by running or loading computer programs stored in the memory and calling data stored in the memory, thereby controlling the lithography machine as a whole.

[0042] Specifically, the processor can obtain a target photolithography pattern to be lithographed, determine a parallel light distribution shape control algorithm according to the target photolithography pattern, control the UV parallel light source to generate target UV parallel light, control the arrayed spatial light modulator to shape the incident UV parallel light according to the parallel light distribution shape control algorithm to form a target preliminary shaped light beam, shape the incident target preliminary shaped light beam according to the mask to form a target secondary shaped light beam, and control the focusing mirror to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern. By receiving the target exposure light beam through the wafer, a target exposure pattern corresponding to the target photolithography pattern can be generated. The arrayed adjustment method of the photolithography machine light source provided in the present application enables the photolithography machine to accurately output the target light, that is, the target exposure light beam, so that the target exposure pattern corresponding to the target photolithography pattern can be accurately generated.

[0043] In some embodiments, the arrayed spatial light modulator may be an arrayed transmissive liquid crystal spatial light modulator (Spatial Light Modulator SLM), see Figure 1 , Figure 1 A schematic diagram of an application scenario of an arrayed transmissive liquid crystal spatial light modulator provided in an embodiment of the present application, wherein a UV parallel light source 10, a mask plate 20 and an arrayed transmissive liquid crystal spatial light modulator 30 are placed in parallel, and the arrayed transmissive liquid crystal spatial light modulator 30 is arranged between the UV parallel light source 10 and the mask plate 20. The processor controls the arrayed transmissive liquid crystal spatial light modulator 30 to shape the distribution shape of the incident UV parallel light to form a preliminary shaped beam, and the preliminary shaped beam is directly injected into the mask plate 30 to form a secondary shaped beam, and the secondary shaped beam is directly injected into the focusing lens 40, and the focusing lens 40 focuses the incident beam to form an exposure beam, and the exposure beam is injected into the wafer 50, and the wafer 50 receives the exposure beam to generate a corresponding exposure pattern.

[0044] For details, please continue to see Figure 1, an arrayed compound eye lens composed of an arrayed transmissive liquid crystal spatial light modulator 30 is adopted, the arrayed transmissive liquid crystal spatial light modulator 30 adopts transparent liquid crystal, and the arrayed transmissive liquid crystal spatial light modulator 30 is adjusted according to the parallel light distribution shape control algorithm, the arrayed transmissive liquid crystal spatial light modulator 30 corresponding to the part that needs to be exposed is in the open state so that the parallel light can pass through the arrayed transmissive liquid crystal spatial light modulator 30 freely and adjusts the emission energy of the parallel light according to the exposure requirement; the arrayed transmissive liquid crystal spatial light modulator 30 corresponding to the part that does not need to be exposed is in the off state so that the parallel light cannot pass through the arrayed transmissive liquid crystal spatial light modulator 30; at the edge position of the lithography pattern, the arrayed transmissive liquid crystal spatial light modulator 30 not only adjusts the energy passing through the arrayed transmissive liquid crystal spatial light modulator 30 according to the parallel light distribution shape control algorithm, but also adjusts the phase of the parallel light so that the phase of the edge part is superimposed or subtracted, thereby improving the clarity of the edge of the lithography pattern, and finally inducing the photoresist to complete a more refined photochemical reaction.

[0045] In some embodiments, the arrayed spatial light modulator may be an arrayed reflective liquid crystal spatial light modulator (Spatial Light Modulator SLM), see Figure 2 , Figure 2 A schematic diagram of an application scenario of an arrayed reflective liquid crystal spatial light modulator provided in an embodiment of the present application, wherein a UV parallel light source 10 is placed at an angle of 90 degrees to a mask plate 20, the mask plate 20 and a focusing lens 40 are placed in parallel, and an arrayed reflective liquid crystal spatial light modulator 31 is arranged between the UV parallel light source and the mask plate 20 and placed at an angle of 45 degrees. The processor controls the arrayed reflective liquid crystal spatial light modulator 31 to adjust the distribution shape of the incident UV parallel light to form a primary shaped beam, the primary shaped beam is rotated 90 degrees and reflected into the mask plate 20 to form a secondary shaped beam, the secondary shaped beam is directly incident into the focusing lens 40, the focusing lens 40 focuses the incident beam to form an exposure beam, the exposure beam is incident into a wafer 50, the wafer 50 receives the exposure beam, and a corresponding exposure pattern is generated.

[0046] Please continue reading Figure 2 The lithography machine may further include a first heat sink 60, which is disposed on the back of the arrayed reflective liquid crystal spatial light modulator 31. The first heat sink 60 converts the target UV parallel light that is not reflected by the arrayed reflective liquid crystal spatial light modulator 31 into heat energy for dissipation.

[0047] For details, please continue to refer to Figure 2, an arrayed compound eye lens composed of an arrayed reflective liquid crystal spatial light modulator 31 is adopted, and the arrayed reflective liquid crystal spatial light modulator 31 is adjusted according to the parallel light distribution shape control algorithm. The arrayed reflective liquid crystal spatial light modulator 31 corresponding to the part that needs to be exposed is in the open state to reflect the parallel light into the focusing mirror 40 and adjust the emission energy of the parallel light according to the exposure requirement; the arrayed reflective liquid crystal spatial light modulator 31 corresponding to the part that does not need to be exposed is in the off state to convert the light energy of the parallel light into heat energy and dissipate it through the first heat sink 60, so that the parallel light cannot be reflected into the focusing mirror 40; at the edge position of the lithography pattern, the arrayed reflective liquid crystal spatial light modulator 31 not only adjusts the energy reflected into the focusing mirror 40 according to the parallel light distribution shape control algorithm, but also adjusts the phase of the parallel light so that the phase of the edge part is superimposed or subtracted, thereby improving the clarity of the edge of the lithography pattern, and finally achieving a finer exposure pattern.

[0048] In some embodiments, the arrayed spatial light modulator may be an arrayed digital micromirror device spatial light modulator (Digital Micromirror Device DMD), see Figure 3 , Figure 3 A schematic diagram of an application scenario of an arrayed digital micromirror device spatial light modulator provided in an embodiment of the present application, wherein a UV parallel light source 10 is placed at an angle of 90 degrees to a mask plate 20, the mask plate 20 and a focusing lens 40 are placed in parallel, and an arrayed digital micromirror device spatial light modulator 32 is arranged at an angle of 45 degrees between the UV parallel light source 10 and the mask plate 20. The processor controls the arrayed digital micromirror device spatial light modulator 32 to adjust the distribution shape of the incident UV parallel light to form a primary shaped beam, the primary shaped beam is rotated 90 degrees and reflected into the mask plate 20 to form a secondary shaped beam, the secondary shaped beam is directly incident into the focusing lens 40, the focusing lens 40 focuses the incident beam to form an exposure beam, the exposure beam is incident into the wafer 50, the wafer 50 receives the exposure beam, and generates a corresponding exposure pattern.

[0049] Please continue reading Figure 3 The lithography machine may further include a second heat sink 61, which is disposed opposite the arrayed digital micromirror device spatial light modulator 32. The second heat sink 61 converts parallel light that does not enter the focusing mirror 40 into heat energy for dissipation.

[0050] For details, please continue to see Figure 3, an arrayed compound eye lens composed of an arrayed digital micromirror device spatial light modulator 32 is adopted, and the arrayed digital micromirror device spatial light modulator 32 is adjusted according to the parallel light distribution shape control algorithm, and the arrayed digital micromirror device spatial light modulator 32 corresponding to the exposure part reflects the parallel light into the focusing mirror 40 and adjusts the emission energy of the parallel light according to the exposure requirement; the arrayed digital micromirror device spatial light modulator 32 corresponding to the exposure part does not need to be reflected to the surface of the second heat sink 61 opposite to the arrayed digital micromirror device spatial light modulator 32, so as to convert the parallel light incident on the second heat sink 61 into the form of heat energy for dissipation, so that the parallel light cannot be reflected into the focusing mirror 40; at the edge of the lithography pattern, the parallel light distribution shape control algorithm controls the liquid crystal state of the arrayed digital micromirror device spatial light modulator 32 to adjust the phase of the parallel light, and at the same time, the power adjustment is realized by the superposition or offset of the phase and the clarity of the edge of the lithography pattern is improved, and finally a finer exposure pattern is achieved.

[0051] The present application provides an arrayed fly-eye lens composed of an arrayed spatial light modulator, which has a certain divergence angle compared to the light path after collimation by a single fly-eye lens, so that the divergence angle emitted from the fly-eye lens is much larger than the theoretical design field of view requirement of the focusing lens, and other problems. Each modulation unit of the arrayed spatial light modulator shapes the emitted parallel light, thereby limiting the divergence angle of the light path, avoiding the problem that the emitted divergence angle is much larger than the theoretical design field of view requirement of the focusing lens, and making the exposure pattern more refined.

[0052] Compared with a double-row separated fly-eye lens, an arrayed fly-eye lens composed of an arrayed spatial light modulator provided in the present application has high requirements for the alignment accuracy of the front and rear fly-eyes in the assembly process and is prone to problems such as color deficiency and edge deficiency. The arrayed spatial light modulator does not require front and rear row alignment during the assembly process, thereby reducing the assembly process requirements.

[0053] Because the parallel light distribution shape control algorithm generated by artificial intelligence not only adjusts the on-off of the parallel light at the edge of the lithography pattern, but also adjusts the energy, phase and power of the parallel light at the edge of the pattern, it avoids problems such as color loss and edge loss.

[0054] In addition, the arrayed compound eye lens composed of an arrayed spatial light modulator provided by the present application is different from the traditional lithography machine light path, in which the uniform light obtained by collimating the compound eye lens is used to miniaturize the mask pattern and expose it to the device through a focusing mirror. The arrayed compound eye lens composed of an arrayed spatial light modulator proposed by the present application directly controls the on / off, energy, phase and power of the parallel light through a pre-input digitized mask pattern during the light uniformity process through an artificial intelligence configuration parallel light distribution shape control algorithm.

[0055] In addition, in some embodiments, the processor can also divide the target lithography pattern into a target basic mask pattern group, determine the arrayed spatial light modulator corresponding to each target basic mask pattern in the target basic mask pattern group through artificial intelligence, and generate the parallel light distribution shape control algorithm according to each of the control-specific algorithms.

[0056] It should be noted that the target photolithography pattern is composed of the corresponding target basic mask patterns. When generating the target photolithography pattern, the target basic mask patterns can be generated separately to obtain the target photolithography pattern. Therefore, by splicing and combining the control-specific algorithms corresponding to the target basic mask patterns, a parallel light distribution shape control algorithm that can generate the target exposure pattern corresponding to the target photolithography pattern can be obtained.

[0057] In some embodiments, the processor can also obtain a basic mask pattern, obtain a lithography algorithm and exposure and development results of the basic mask pattern under different modulation parameters of an arrayed spatial light modulator, establish a relationship between the exposure and development results and the modulation parameters based on artificial intelligence, and generate the control-specific algorithm.

[0058] Specifically, the specific generation process of the control-specific algorithm is as follows:

[0059] The first step is to obtain a basic lithography pattern, which is a basic lithography pattern commonly used in the lithography process, such as a simple pattern such as a circle, a quadrilateral, a polygon, a five-pointed star, etc.;

[0060] The second step is to form a basic lithography pattern database by collecting information such as lithography algorithms, exposure and development results under different spatial light modulator modulation parameters of the basic lithography pattern, where the spatial light modulator modulation parameters include information such as on and off, light intensity, light phase and light power passing through each independent thin film liquid crystal transistor array;

[0061] In the third step, artificial intelligence uses a mechanical deep loop learning method to establish the relationship between the exposure and development results of the basic lithography pattern and the modulation parameters of the spatial light modulator to form a dedicated control algorithm, specifically:

[0062] 1. If the spatial light modulator is an arrayed transmissive liquid crystal spatial light modulator, the relationship between the on / off, energy and phase parameters of the light passing through the arrayed transmissive liquid crystal spatial light modulator and the exposure and development results of the photolithography pattern is iteratively calculated to finally form a dedicated control algorithm.

[0063] 2. If the spatial light modulator is an arrayed reflective liquid crystal spatial light modulator, the relationship between the reflection, energy and phase parameters of the light reflected from the arrayed reflective liquid crystal spatial light modulator and the exposure and development results of the lithography pattern is iteratively calculated to finally form a dedicated control algorithm.

[0064] 3. If the spatial light modulator is an arrayed digital micromirror device spatial light modulator, the relationship between the reflection, energy and power parameters of the light reflected from the arrayed digital micromirror device spatial light modulator and the exposure and development results of the lithography pattern is iteratively calculated to finally form a dedicated control algorithm.

[0065] Among them, mechanical deep recurrent learning is a method that combines deep learning and recurrent neural networks, that is, a method that combines deep learning and repeated iterations.

[0066] The present application also provides a method for adjusting the array light source of a lithography machine. Figure 4 , Figure 4 The first flow diagram of the parallel light adjustment of the lithography machine provided in the embodiment of the present application is a schematic diagram. The arrayed light source adjustment method of the lithography machine can be applied to the lithography machine as described in the above-mentioned embodiment of the application. The arrayed light source adjustment method of the lithography machine can include the following steps:

[0067] S110, obtaining a target photolithography pattern to be photolithographically processed.

[0068] The target photolithography pattern is a photolithography pattern that needs to be photolithographically processed, and can be obtained by inputting a digital file of the photolithography pattern into a photolithography machine.

[0069] S120, determining a parallel light distribution shape control algorithm according to the target lithography pattern.

[0070] In some embodiments, the step of “determining a parallel light distribution shape control algorithm according to the target lithography pattern” may include the following steps:

[0071] dividing the target photolithography pattern into target basic mask pattern groups;

[0072] Determining a dedicated control algorithm for the arrayed spatial light modulator corresponding to each target basic mask pattern in the target basic mask pattern group through artificial intelligence;

[0073] The parallel light distribution shape control algorithm is generated according to each of the control-specific algorithms.

[0074] In this embodiment, the dedicated control algorithm corresponding to each target basic mask pattern in the target basic mask pattern group is spliced ​​and combined to obtain the parallel light distribution shape control algorithm.

[0075] It should be noted that the target photolithography pattern is composed of the corresponding target basic mask patterns. When generating the target photolithography pattern, the target basic mask patterns can be generated separately to obtain the target photolithography pattern. Therefore, by splicing and combining the control-specific algorithms corresponding to the target basic mask patterns, a parallel light distribution shape control algorithm that can generate the target exposure pattern corresponding to the target photolithography pattern can be obtained.

[0076] Specifically, when determining the target basic mask pattern in the target lithography pattern, the basic mask pattern in the basic mask pattern database contained in the target lithography pattern can be identified through image recognition technology based on the basic mask pattern database, and the identified basic mask pattern can be used as the target basic mask pattern corresponding to the target lithography pattern.

[0077] In some embodiments, the step of “determining, by artificial intelligence, a dedicated control algorithm for the arrayed spatial light modulator corresponding to each target basic mask pattern in the target basic mask pattern group” may include the following steps:

[0078] Obtaining a basic mask pattern;

[0079] Obtaining a photolithography algorithm and exposure and development results of the basic mask pattern under different modulation parameters of an arrayed spatial light modulator;

[0080] The relationship between the exposure and development results and the modulation parameters is established based on artificial intelligence to generate the dedicated control algorithm.

[0081] Specifically, the specific generation process of the control-specific algorithm is as follows:

[0082] The first step is to obtain a basic lithography pattern, which is a basic lithography pattern commonly used in the lithography process, such as a simple pattern such as a circle, a quadrilateral, a polygon, a five-pointed star, etc.;

[0083] The second step is to form a basic lithography pattern database by collecting information such as lithography algorithms, exposure and development results under different spatial light modulator modulation parameters of the basic lithography pattern, where the spatial light modulator modulation parameters include information such as on and off, light intensity, light phase and light power passing through each independent thin film liquid crystal transistor array;

[0084] In the third step, artificial intelligence uses a mechanical deep loop learning method to establish the relationship between the exposure and development results of the basic lithography pattern and the modulation parameters of the spatial light modulator to form a dedicated control algorithm, specifically:

[0085] 1. If the spatial light modulator is an arrayed transmissive liquid crystal spatial light modulator, the relationship between the on / off, energy and phase parameters of the light passing through the arrayed transmissive liquid crystal spatial light modulator and the exposure and development results of the photolithography pattern is iteratively calculated to finally form a dedicated control algorithm.

[0086] 2. If the spatial light modulator is an arrayed reflective liquid crystal spatial light modulator, the relationship between the reflection, energy and phase parameters of the light reflected from the arrayed reflective liquid crystal spatial light modulator and the exposure and development results of the lithography pattern is iteratively calculated to finally form a dedicated control algorithm.

[0087] 3. If the spatial light modulator is an arrayed digital micromirror device spatial light modulator, the relationship between the reflection, energy and power parameters of the light reflected from the arrayed digital micromirror device spatial light modulator and the exposure and development results of the lithography pattern is iteratively calculated to finally form a dedicated control algorithm.

[0088] Among them, mechanical deep recurrent learning is a method that combines deep learning and recurrent neural networks, that is, a method that combines deep learning and repeated iterations.

[0089] The independent thin film liquid crystal transistor array corresponds to the modulation unit of the arrayed spatial light modulator.

[0090] It should be noted that in the present application, artificial intelligence picks up the pattern features of the target lithography pattern and divides the target lithography pattern into a basic mask pattern group in the basic mask pattern database according to the pattern features, and then calls the control-specific algorithm to iteratively generate the corresponding parallel light distribution shape control algorithm. The parallel light distribution shape control algorithm is used to control the on-off, energy, phase and power of the spatial light modulator according to the type of arrayed spatial light modulator and the lithography pattern features to achieve the optimal lithography result.

[0091] S130, controlling the UV parallel light source to generate target UV parallel light.

[0092] S140, controlling the arrayed spatial light modulator to shape the distribution shape of the incident target UV parallel light to form a target preliminary shaped light beam according to the parallel light distribution shape control algorithm.

[0093] The arrayed spatial light modulator is used to adjust the distribution shape, especially the edge shape, of the incident target UV parallel light to form the target preliminary shaped light beam.

[0094] S150, shaping the incident target primary shaped light beam according to the mask plate to form a target secondary shaped light beam.

[0095] S160, controlling the focusing mirror to focus the incident target secondary shaping light beam to form a target exposure light beam corresponding to the target photolithography pattern.

[0096] It should be noted that the surface of the wafer is covered with photoresist, and after the photoresist surface is exposed by the target exposure light beam, a target exposure pattern corresponding to the target photolithography pattern is generated.

[0097] From the above, it can be seen that the arrayed compound eye lens composed of an arrayed spatial light modulator proposed in the embodiment of the present application replaces the traditional compound eye lens with an arrayed spatial light modulator, and controls the on-off, energy, phase and power of the parallel light through artificial intelligence iteration to generate a parallel light distribution shape control algorithm, thereby achieving precise output of the distribution shape of the target light, avoiding the emission divergence angle being far greater than the theoretical design field of view requirement of the focusing mirror, reducing the assembly process requirements, and avoiding problems such as color deficiency and edge deficiency.

[0098] An embodiment of the present application further provides a storage medium storing a computer program. When the computer program runs on a computer, the computer is enabled to execute the method for adjusting the array light source of a lithography machine in any of the above embodiments.

[0099] For example, in some embodiments, when the above computer program is run on a computer, the computer performs the following steps:

[0100] Acquire a target photolithography pattern to be photolithographically processed;

[0101] Determining a parallel light distribution shape control algorithm according to the target lithography pattern;

[0102] Controlling the UV parallel light source to generate target UV parallel light;

[0103] Controlling the arrayed spatial light modulator to shape the distribution shape of the incident target UV parallel light to form a target preliminary shaped light beam according to the parallel light distribution shape control algorithm;

[0104] shaping the incident target primary shaped light beam according to the mask plate to form a target secondary shaped light beam;

[0105] The focusing mirror is controlled to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern.

[0106] The specific implementation of the above operations can be found in the previous embodiments, which will not be described in detail here.

[0107] The storage medium may include: a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, etc.

[0108] Since the instructions stored in the storage medium can execute the steps in any one of the photolithography machine light source array adjustment methods provided in the embodiments of the present application, the beneficial effects that can be achieved by any one of the photolithography machine light source array adjustment methods provided in the embodiments of the present application can be achieved. Please see the previous embodiments for details and will not be repeated here.

[0109] It should be noted that, for the arrayed adjustment method of the light source of a lithography machine according to the embodiment of the present application, ordinary testers in the field can understand that all or part of the process of implementing the arrayed adjustment method of the light source of a lithography machine according to the embodiment of the present application can be completed by controlling the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium, such as stored in the memory of an electronic device, and executed by at least one processor in the electronic device. During the execution process, it can include the process of the embodiment of the arrayed adjustment method of the light source of a lithography machine.

[0110] The above is a detailed introduction to the lithography machine and parallel light control method provided in the embodiments of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, based on the ideas of the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photolithography machine, characterized in that: include: A UV parallel light source, wherein the UV parallel light source is used to generate UV parallel light; An arrayed spatial light modulator, wherein the arrayed spatial light modulator is used to shape the distribution shape of the incident UV parallel light to form a preliminary shaped light beam; A mask plate, wherein the mask plate is used to shape the distribution shape of the incident primary shaped light beam to form a secondary shaped light beam; A focusing mirror, which is used to focus the secondary shaped light beam to form an exposure light beam; A processor, wherein the processor is respectively connected to the UV parallel light source, the arrayed spatial light modulator and the focusing lens, and the processor is used to: Acquire a target photolithography pattern to be photolithographically processed; Determining a parallel light distribution shape control algorithm according to the target lithography pattern; Controlling the UV parallel light source to generate target UV parallel light; Controlling the arrayed spatial light modulator to shape the distribution shape of the incident target UV parallel light to form a target preliminary shaped light beam according to the parallel light distribution shape control algorithm; shaping the incident target primary shaped light beam according to the mask plate to form a target secondary shaped light beam; The focusing mirror is controlled to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern.

2. The photolithography machine according to claim 1, characterized in that: The arrayed spatial light modulator is an arrayed transmissive liquid crystal spatial light modulator, which is arranged between the UV parallel light source and the mask plate. The UV parallel light source, the arrayed transmissive liquid crystal spatial light modulator and the mask plate are placed parallel to each other, and the processor controls the arrayed transmissive liquid crystal spatial light modulator to directly inject the incident target preliminary shaped light beam into the mask plate.

3. The lithography machine according to claim 1, characterized in that: The arrayed spatial light modulator is an arrayed reflective liquid crystal spatial light modulator, the UV parallel light source is placed at an angle of 90 degrees to the mask plate, the arrayed reflective liquid crystal spatial light modulator is arranged between the UV parallel light source and the mask plate at an angle of 45 degrees, and the processor controls the arrayed reflective liquid crystal spatial light modulator to rotate the incident target preliminary shaped light beam by 90 degrees and reflect it into the mask plate.

4. The photolithography machine according to claim 3, characterized in that: The lithography machine also includes a first heat sink, which is arranged on the back of the arrayed reflective liquid crystal spatial light modulator. The first heat sink converts the target preliminary shaped light beam that has not been reflected by the arrayed reflective liquid crystal spatial light modulator into heat energy and dissipates it.

5. The photolithography machine according to claim 1, characterized in that: The arrayed spatial light modulator is an arrayed digital micromirror device spatial light modulator. The UV parallel light source is placed at a 90-degree angle to the mask plate. The arrayed digital micromirror device spatial light modulator is arranged between the UV parallel light source and the mask plate at a 45-degree angle. The arrayed digital micromirror device spatial light modulator rotates the incident target preliminary shaped light beam by 90 degrees and reflects it into the mask plate.

6. The photolithography machine according to claim 5, characterized in that: The lithography machine also includes a second heat sink, which is arranged opposite to the arrayed digital micromirror device spatial light modulator. The second heat sink converts the target preliminary shaped light beam that is not incident on the mask into heat energy for dissipation.

7. The photolithography machine according to any one of claims 1 to 6, characterized in that: The processor is further configured to: dividing the target photolithography pattern into target basic mask pattern groups; Determining a dedicated control algorithm for the arrayed spatial light modulator corresponding to each target basic mask pattern in the target basic mask pattern group through artificial intelligence; The parallel light distribution shape control algorithm is generated according to each of the control-specific algorithms.

8. The photolithography machine according to any one of claim 7, characterized in that: The processor is further configured to: Obtaining a basic mask pattern; Obtaining a photolithography algorithm and exposure and development results of the basic mask pattern under different modulation parameters of an arrayed spatial light modulator; The relationship between the exposure and development results and the modulation parameters is established based on artificial intelligence to generate the dedicated control algorithm.

9. A method for adjusting the array light source of a lithography machine, characterized in that: The photolithography machine includes a UV parallel light source for generating UV parallel light, an arrayed spatial light modulator for shaping the distribution shape of the incident UV parallel light to form a primary shaped light beam, a mask for shaping the distribution shape of the incident primary shaped light beam to form a secondary shaped light beam, and a focusing mirror for focusing the secondary shaped light beam to form an exposure light beam. The method includes: Acquire a target photolithography pattern to be photolithographically processed; Determining a parallel light distribution shape control algorithm according to the target lithography pattern; Controlling the UV parallel light source to generate target UV parallel light; Controlling the arrayed spatial light modulator to shape the distribution shape of the incident target UV parallel light to form a target preliminary shaped light beam according to the parallel light distribution shape control algorithm; shaping the incident target primary shaped light beam according to the mask plate to form a target secondary shaped light beam; The focusing mirror is controlled to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern.

10. The method for adjusting the array light source of a lithography machine according to claim 9, characterized in that: The controlling the arrayed spatial light modulator to shape the incident target UV parallel light according to the parallel light distribution shape control algorithm to form a target preliminary shaped light beam comprises: dividing the target photolithography pattern into target basic mask pattern groups; Determining a dedicated control algorithm for the arrayed spatial light modulator corresponding to each target basic mask pattern in the target basic mask pattern group through artificial intelligence; The parallel light distribution shape control algorithm is generated according to each of the control-specific algorithms.

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