Peeling device, peeling system, and peeling method

Abstract

The invention provides a peeling apparatus, a peeling system and a peeling method. The peeling device is provided with: a cutting part for cutting by inserting a sharp member into a side surface of a superposed substrate in which a first substrate and a second substrate are joined, said side surface being located on the starting point side of the beginning of peeling; a first holding unit that sucks and holds the first substrate, the first holding unit including a starting point side suctioning unit that sucks a peripheral edge of an outer peripheral portion located on a starting point side at the beginning of peeling among the outer peripheral portions of the first substrate, and a starting point side lifting mechanism that lifts and lowers the starting point side suctioning unit; a second holding unit that adsorbs and holds a second substrate; a detection unit that detects the adsorption of the first substrate by the starting point side adsorption unit; and a control unit. In the cutting process, the cutting part is controlled to cut on the side surface of the overlapped substrate, which is located at the starting point side of the beginning of the peeling. In the adsorption processing, the starting point side lifting mechanism is controlled to enable the starting point side adsorption part to descend and be adsorbed on the first substrate.

Description

Technical Field

[0001] The present disclosure relates to a stripping device, a stripping system and a stripping method. Background Art

[0002] In recent years, for example, in the manufacturing process of semiconductor devices, the diameter and thickness of semiconductor substrates such as silicon wafers and compound semiconductor wafers have been increased. Large-diameter and thin semiconductor substrates are at risk of warping and cracking during transportation and grinding. Therefore, after the support substrate is bonded to the semiconductor substrate for reinforcement, it is transported and ground, and then the support substrate is peeled off from the semiconductor substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-207776 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology for reducing cracks in a substrate.

[0008] Solutions for solving problems

[0009] The peeling device of one embodiment of the present disclosure includes a cutting section, a first holding section, a second holding section, a detection section, and a control section. The cutting section inserts a sharp member into the side of the overlapping substrate formed by the first substrate and the second substrate, which is located at the starting point side of the peeling, to cut. The first holding section adsorbs and holds the first substrate in the overlapping substrate, and the first holding section includes a starting point side adsorption section and a starting point side lifting mechanism. The starting point side adsorption section adsorbs the peripheral edge of the peripheral portion of the outer peripheral portion of the first substrate, which is located at the starting point side of the peeling. The starting point side lifting mechanism lifts and lowers the starting point side adsorption section. The second holding section adsorbs and holds the second substrate in the overlapping substrate. The detection section detects the adsorption of the first substrate by the starting point side adsorption section. The control section performs a cutting process, an adsorption process, a first moving process, a second moving process, and a stop process. In the cutting process, the cutting section is controlled to cut into the side of the overlapping substrate, which is located at the starting point side of the peeling. After the cutting process, the starting point side lifting mechanism is controlled in the adsorption process to make the starting point side adsorption section descend and adsorb to the first substrate. In the adsorption process, in the first movement process, the starting point side lifting mechanism is controlled to move the starting point side adsorption part at a first speed from a standby position separated from the first substrate to a speed change position before contacting the first substrate, and the speed change position is closer to the first substrate than the standby position. After the first movement process, the starting point side lifting mechanism is controlled in the second movement process to move the starting point side adsorption part from the speed change position to a direction close to the first substrate at a second speed slower than the first speed. In the stop process, when it is determined that the first substrate is adsorbed by the starting point side adsorption part based on the detection result of the detection part in the second movement process, the starting point side lifting mechanism is controlled to stop the movement of the starting point side adsorption part.

[0010] Effects of the Invention

[0011] According to the present disclosure, the occurrence of cracks in the substrate can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic plan view showing the structure of the peeling system according to the first embodiment.

[0013] Figure 2 It is a schematic side view of the superimposed substrate involved in the first embodiment.

[0014] Figure 3 It is a schematic side view showing the structure of the peeling device according to the first embodiment.

[0015] Figure 4 It is a schematic plan view of the first holding portion according to the first embodiment.

[0016] Figure 5A This is a diagram illustrating the action of the cut-in process.

[0017] Figure 5B This is a diagram illustrating the action of the cut-in process.

[0018] Figure 5C This is a diagram illustrating the action of the cut-in process.

[0019] Figure 6 This is a diagram showing an example of transition of the position of the starting point side suction portion in the vertical direction.

[0020] Figure 7 This is a flowchart showing the procedure of the process executed by the peeling system according to the first embodiment.

[0021] Figure 8 This is a flowchart showing an example of a specific procedure of the peeling process shown in step S102.

[0022] Fig. 9 This is a flowchart showing an example of a specific procedure of the first adsorption process shown in step S202.

[0023] Fig. 10A It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0024] Fig. 10B It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0025] Fig. 10C It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0026] Fig. 10D It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0027] Fig.10E It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0028] Fig.10F It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0029] Figure 10G It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0030] Fig. 10H It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0031] Fig.10I It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0032] Fig.10JIt is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0033] Figure 10K It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0034] Fig.10L It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0035] Figure 10M It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0036] Fig.10N It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0037] Fig.10O It is a schematic diagram showing an operation example of the peeling system according to the first embodiment.

[0038] Fig.11 It is a schematic side view showing the positional relationship among the superimposed substrate, the adsorption portion of the first holding portion, and the sensor according to the second embodiment.

[0039] Fig.12 It is a schematic plan view showing the positional relationship among the superimposed substrate, the elastic member of the first holding portion, and the sensor according to the second embodiment.

[0040] Fig.13 This is a schematic side view showing an example of the relationship between the upper wafer and the sensor during the peeling process.

[0041] Fig.14 This is a schematic side view showing an example of the relationship between the upper wafer and the sensor during the peeling process.

[0042] Fig.15 1 is a flowchart showing the procedure of the peeling completion determination process of the peeling system according to the second embodiment. DETAILED DESCRIPTION

[0043] Hereinafter, the stripping device, stripping system, and stripping method for implementing the present disclosure will be described in detail with reference to the accompanying drawings (hereinafter, referred to as "embodiment"). In addition, the present disclosure is not limited by the embodiment. In addition, the various embodiments can be appropriately combined within the scope that does not cause contradictions in the processing contents. In addition, in the following embodiments, the same reference numerals are marked on the same parts, and repeated descriptions are omitted.

[0044] In the embodiments shown below, expressions such as "certain", "orthogonal", "perpendicular" or "parallel" are sometimes used, but these expressions do not need to be "certain", "orthogonal", "perpendicular" or "parallel" in a strict sense. That is, the above expressions are set to allow for deviations such as manufacturing accuracy and setting accuracy.

[0045] In addition, in the drawings referred to below, in order to make the description easier to understand, mutually orthogonal X-axis directions, Y-axis directions, and Z-axis directions are sometimes specified, and an orthogonal coordinate system with the positive direction of the Z-axis as the vertical upward direction is shown. In addition, the rotation direction with the vertical axis as the rotation center is sometimes referred to as the θ direction.

[0046] Patent document 1 discloses a process in which, after a peeling start portion, which is the start of peeling of the support substrate, is formed on the side of the superimposed substrate, the adsorption moving part is lowered to the vicinity of the support substrate and the non-bonding surface of the support substrate is adsorbed and held. Specifically, a sharp member such as a cutting tool is moved forward after being brought into contact with the side of the superimposed substrate so as to face the side of the superimposed substrate, so that a part of the support substrate is pushed upward to form the peeling start portion.

[0047] However, when the adsorption moving portion is lowered in a state where a part of the support substrate is pushed upward, the adsorption moving portion presses the support substrate, which may cause cracks in the support substrate.

[0048] Therefore, it is expected to overcome the above-mentioned problems and realize a technology that reduces the occurrence of cracks in substrates.

[0049] (First Embodiment)

[0050] <Structure of the peeling system>

[0051] First, refer to Figure 1 and Figure 2 The structure of the peeling system 1 according to the first embodiment will be described. Figure 1 1 is a schematic plan view showing the structure of the peeling system 1 according to the first embodiment. Figure 2 It is a schematic side view of the superimposed substrate T according to the first embodiment.

[0052] Figure 1 The stripping system 1 shown is for example Figure 2 The first substrate W1 and the second substrate W2 are bonded by intermolecular force to form a superimposed substrate T, and the first substrate W1 is peeled off. Hereinafter, the first substrate W1 is recorded as "upper wafer W1" and the second substrate W2 is recorded as "lower wafer W2". That is, the upper wafer W1 is an example of the first substrate, and the lower wafer W2 is an example of the second substrate.

[0053] In addition, below, Figure 2As shown, the plate surface of the upper wafer W1 on the side to be bonded to the lower wafer W2 is recorded as "bonding surface W1j", and the plate surface on the side opposite to the bonding surface W1j is recorded as "non-bonding surface W1n". In addition, the plate surface of the lower wafer W2 on the side to be bonded to the upper wafer W1 is recorded as "bonding surface W2j", and the plate surface on the side opposite to the bonding surface W2j is recorded as "non-bonding surface W2n".

[0054] The upper wafer W1 is a substrate on which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. In addition, the lower wafer W2 is a bare wafer on which no electronic circuits are formed. The upper wafer W1 and the lower wafer W2 have substantially the same diameter. In addition, an electronic circuit may also be formed on the lower wafer W2.

[0055] like Figure 1 As shown, the peeling system 1 includes two processing blocks, a first processing block 10 and a second processing block 20. The first processing block 10 and the second processing block 20 are arranged adjacent to each other.

[0056] In the first processing block 10, the loading of the superimposed substrate T, the peeling of the superimposed substrate T, the cleaning and unloading of the lower wafer W2 after peeling, etc. are performed. The first processing block 10 includes a loading and unloading station 11, a first conveying area 12, a standby station 13, a peeling station 14, and a first cleaning station 15.

[0057] The loading and unloading station 11, the standby station 13, the stripping station 14, and the first cleaning station 15 are arranged adjacent to the first conveying area 12. Specifically, the loading and unloading station 11 and the standby station 13 are arranged on the negative side of the Y axis of the first conveying area 12, and the stripping station 14 and the first cleaning station 15 are arranged on the positive side of the Y axis of the first conveying area 12.

[0058] A plurality of cassette mounting tables are provided at the loading / unloading station 11 , and a cassette Ct for housing the superimposed substrate T and a cassette C2 for housing the lower wafer W2 after separation are mounted on each of the cassette mounting tables.

[0059] A first conveying device 12a for conveying the superimposed substrate T or the lower wafer W2 after peeling is arranged in the first conveying area 12. The first conveying device 12a includes a conveying arm capable of horizontal movement, vertical lifting and lowering, and rotation centered on the vertical direction, and a substrate holding portion mounted on the front end of the conveying arm. The first conveying device 12a is an example of a substrate conveying device.

[0060] In the first transfer area 12 , the first transfer device 12 a transfers the superimposed substrate T to the standby station 13 and the peeling station 14 , and transfers the peeled lower wafer W2 to the first cleaning station 15 and the loading / unloading station 11 .

[0061] In the standby station 13, a standby process of temporarily making the superimposed substrate T to be processed wait is performed as needed. The standby station 13 is provided with a mounting table for mounting the superimposed substrate T transported by the first transport device 12a.

[0062] The peeling station 14 is provided with a peeling device 5 (see Figure 3 ), the peeling device 5 performs a peeling process of peeling the upper wafer W1 from the superimposed substrate T. The specific structure and operation of the peeling device 5 will be described later.

[0063] The lower wafer W2 after peeling is cleaned in the first cleaning station 15. A first cleaning device for cleaning the lower wafer W2 after peeling is disposed in the first cleaning station 15. As the first cleaning device, for example, a cleaning device described in Japanese Patent Application Laid-Open No. 2013-033925 can be used.

[0064] In addition, the upper wafer W1 after separation is cleaned and carried out in the second processing block 20 . The second processing block 20 includes a transfer station 21 , a second cleaning station 22 , a second transfer area 23 , and a carry-out station 24 .

[0065] The second cleaning station 22 is an example of a cleaning device.

[0066] The transfer station 21, the second cleaning station 22 and the unloading station 24 are arranged adjacent to the second transfer area 23. Specifically, the transfer station 21 and the second cleaning station 22 are arranged on the positive side of the second transfer area 23, and the unloading station 24 is arranged on the negative side of the second transfer area 23.

[0067] The delivery station 21 is disposed adjacent to the peeling station 14 of the first processing block 10. The delivery station 21 receives the peeled upper wafer W1 from the peeling station 14 and transfers it to the second cleaning station 22 for delivery.

[0068] A second transfer device 211 is disposed at the delivery station 21. The second transfer device 211 includes a non-contact holding portion such as a Bernoulli holding plate (holding plate: chuck), and the peeled upper wafer W1 is transferred by the second transfer device 211 in a non-contact manner.

[0069] The second cleaning station 22 performs a second cleaning process for cleaning the peeled upper wafer W1. A second cleaning device for cleaning the peeled upper wafer W1 is disposed in the second cleaning station 22. As the second cleaning device, for example, a cleaning device described in Japanese Patent Application Laid-Open No. 2013-033925 can be used.

[0070] A third transport device 231 for transporting the peeled upper wafer W1 is disposed in the second transport area 23. The third transport device 231 includes a transport arm capable of horizontal movement, vertical lifting and lowering, and rotation centered in the vertical direction, and a substrate holding portion mounted on the front end of the transport arm. In the second transport area 23, the third transport device 231 is used to transport the peeled upper wafer W1 to the unloading station 24.

[0071] A plurality of cassette mounting tables are provided at the unloading station 24 , and a cassette C1 for accommodating the peeled upper wafer W1 is mounted on each of the cassette mounting tables.

[0072] In addition, the peeling system 1 includes a control device 30. The control device 30 controls the operation of the peeling system 1. The control device 30 is, for example, a computer, and includes a control unit 31 and a storage unit 32. The storage unit 32 stores programs for controlling various processes such as a bonding process. The control unit 31 controls the operation of the peeling system 1 by reading and executing the program stored in the storage unit 32.

[0073] In addition, the program can be recorded in a computer-readable recording medium and installed from the recording medium into the storage unit 32 of the control device 30. Examples of the computer-readable recording medium include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0074] In the peeling system 1 configured as described above, first, the first transport device 12 a of the first processing block 10 takes out the overlapped substrate T from the cassette Ct placed on the loading / unloading station 11 , and carries the taken-out overlapped substrate T into the standby station 13 .

[0075] For example, when overlapping substrates T to be processed are generated due to a processing time difference between devices, the overlapping substrates T can be temporarily put on standby using a temporary standby unit provided in the standby station 13, thereby shortening the loss time between a series of processes.

[0076] Next, the first transfer device 12a takes out the overlapped substrate T from the standby station 13 and carries it to the separation station 14. Then, the separation device 5 disposed at the separation station 14 performs separation processing on the overlapped substrate T. Through the separation processing, the overlapped substrate T is separated into the upper wafer W1 and the lower wafer W2.

[0077] The peeled lower wafer W2 is taken out from the peeling station 14 by the first transfer device 12a and transported to the first cleaning station 15. In the first cleaning station 15, the first cleaning device performs a first cleaning process on the peeled lower wafer W2. The bonding surface W2j of the lower wafer W2 is cleaned by the first cleaning process.

[0078] The lower wafer W2 after the first cleaning process is taken out from the first cleaning station 15 by the first transfer device 12a and stored in the cassette C2 placed in the loading / unloading station 11. Thereafter, the cassette C2 is taken out and recovered from the loading / unloading station 11. In this way, the process on the lower wafer W2 is completed.

[0079] On the other hand, the peeled upper wafer W1 is processed in the second processing block 20 in parallel with the processing in the first processing block 10 described above.

[0080] In the second processing block 20 , first, the second transfer device 211 disposed at the delivery station 21 takes out the peeled upper wafer W1 from the peeling station 14 and carries it into the second cleaning station 22 .

[0081] Here, the upper wafer W1 after peeling is in a state where the upper surface side, i.e., the non-bonding surface W1n side, is held by the peeling device 5, and the second transfer device 211 holds the bonding surface W1j side of the upper wafer W1 from below in a non-contact manner. Afterwards, the second transfer device 211 flips the held upper wafer W1 and places it on the second cleaning device of the second cleaning station 22.

[0082] Thus, the upper wafer W1 is placed on the second cleaning device with the bonding surface W1j facing upward. The second cleaning device performs a second cleaning process for cleaning the bonding surface W1j of the upper wafer W1. The bonding surface W1j of the upper wafer W1 is cleaned by the second cleaning process.

[0083] The upper wafer W1 after the second cleaning process is taken out from the second cleaning station 22 by the third transfer device 231 disposed in the second transfer area 23 and stored in the cassette C1 placed in the unloading station 24. Thereafter, the cassette C1 is taken out and recovered from the unloading station 24. In this way, the process on the upper wafer W1 is also completed.

[0084] As described above, the peeling system 1 according to the first embodiment is configured to include a front end for superimposing the substrate T and the lower wafer W2 after peeling, and a front end for the upper wafer W1 after peeling.

[0085] Here, the front end for the superimposed substrate T and the lower wafer W2 after separation is the loading and unloading station 11 and the first transfer device 12 a , and the front end for the upper wafer W1 after separation is the unloading station 24 and the third transfer device 231 .

[0086] Thus, the process of transferring the upper wafer W1 to the loading / unloading station 11 and the process of transferring the lower wafer W2 to the unloading station 24 can be performed in parallel, so a series of substrate processes can be performed efficiently.

[0087] In addition, in the stripping system 1 according to the first embodiment, the stripping station 14 is connected to the second cleaning station 22 via the transfer station 21. Thus, the stripped upper wafer W1 can be directly transferred from the stripping station 14 to the second cleaning station 22 without passing through the first transfer area 12 and the second transfer area 23, so that the stripped upper wafer W1 can be smoothly transferred.

[0088] <Structure of the peeling device>

[0089] Next, refer to Figure 3 The structure of the peeling device 5 provided in the peeling station 14 will be described. Figure 3 It is a schematic side view showing the structure of the peeling device 5 according to the first embodiment.

[0090] The peeling device 5 includes a first holding portion 50 , a second holding portion 70 , a cutting portion 90 , and a third holding portion 100 .

[0091] The peeling device 5 holds the upper wafer W1 of the overlapped substrate T from above by suction through the first holding portion 50, and holds the lower wafer W2 of the overlapped substrate T from below by suction through the second holding portion 70. Furthermore, the peeling device 5 moves the upper wafer W1 in a direction away from the plate surface of the lower wafer W2 (in this case, the positive direction of the Z axis) by the lifting mechanism 60.

[0092] Thus, the upper wafer W1 held by the first holding portion 50 is continuously peeled from the lower wafer W2 from one end toward the other end thereof. Next, each component will be described in detail.

[0093] The first holding portion 50 holds the non-bonding surface W1n of the upper wafer W1 in the superimposed substrate T by suction. The first holding portion 50 includes an elastic member 51, a plurality of suction portions 52, and a plurality of lifting mechanisms 60. The elastic member 51 is a thin plate-shaped member, for example, formed of a metal such as a metal plate. The elastic member 51 has an opening 515 in the center portion for allowing the third holding portion 100 to pass through. The elastic member 51 is arranged above the upper wafer W1 and faces the upper wafer W1.

[0094] The plurality of adsorption units 52 are provided on the surface (here, the lower surface) of the elastic member 51 facing the upper wafer W1 . Each adsorption unit 52 includes a main body 521 fixed to the elastic member 51 and an adsorption pad 522 provided below the main body 521 .

[0095] Each adsorption unit 52 is connected to an air suction device 524 such as a vacuum pump via an air suction pipe 523. The first holding unit 50 uses the suction force generated by the plurality of adsorption units 52 through the air suction device 524 to hold the non-bonding surface W1n (see FIG. 1 ) of the upper wafer W1. Figure 2 ) is sucked. Thus, the upper wafer W1 is sucked and held by the first holding portion 50 .

[0096] In addition, as the suction plate 522 provided in the suction portion 52, a suction plate of a type with a small deformation amount is preferred. This is because if the suction plate 522 is greatly deformed when the lifting mechanism 60 described later pulls the first holding portion 50, the suctioned portion of the upper wafer W1 is greatly deformed along with the deformation, which may damage the upper wafer W1 or the lower wafer W2. Specifically, as the suction plate 522, for example, a suction plate having ribs on the suction surface, a flat plate with a space height of 0.5 mm or less, etc. are preferred.

[0097] In addition, the peeling device 5 includes a detector 525 for detecting the suction of the upper wafer W1 by the suction unit 52. The detector 525 is, for example, a pressure detector for detecting the suction pressure of the suction pad 522 included in the suction unit 52. The detector 525 as a pressure detector is, for example, provided in the middle of the suction pipe 523.

[0098] A plurality of (here, two) lifting mechanisms 60 enable the plurality of adsorption units 52 to be lifted and lowered. Figure 3 As shown, the plurality of lifting mechanisms 60 include a starting point side lifting mechanism 60A and a terminal side lifting mechanism 60B. The starting point side lifting mechanism 60A and the terminal side lifting mechanism 60B are respectively provided corresponding to a plurality of (here, two) extensions 512 of the elastic member 51 described later. Specifically, the starting point side lifting mechanism 60A is provided corresponding to the extension 512 located on the negative direction side of the Y axis among the two extensions 512. On the other hand, the terminal side lifting mechanism 60B is provided corresponding to the extension 512 located on the positive direction side of the Y axis among the two extensions 512.

[0099] The lifting mechanism 60 includes a support member 61 , a moving mechanism 62 , and a load sensor 63 .

[0100] The support member 61 is a member extending in the vertical direction (Z-axis direction), and one end portion is connected to the extension portion 512 (see FIG. 5 ) of the elastic member 51. Figure 4 ), and the other end is connected to the moving mechanism 62 via the support body 64.

[0101] The moving mechanism 62 is fixed to the upper part of the support body 64, and moves the support member 61 connected to the lower part of the moving mechanism 62 in the vertical direction. The load sensor 63 detects the load applied to the support member 61.

[0102] The lifting mechanism 60 moves the support member 61 in the vertical direction using the moving mechanism 62 to lift and lower the extending portion 512 of the elastic member 51 connected to the support member 61 , thereby lifting and lowering the adsorption portion 52 provided on the elastic member 51 .

[0103] Specifically, the starting point side lifting mechanism 60A moves the support member 61 in the vertical direction using the moving mechanism 62 to lift the extension portion 512 connected to the support member 61 on the negative side of the Y axis, thereby lifting the starting point side adsorption portion 52A located near the extension portion 512 on the negative side of the Y axis. Similarly, the terminal side lifting mechanism 60B moves the support member 61 in the vertical direction using the moving mechanism 62 to lift the extension portion 512 connected to the positive side of the Y axis, thereby lifting the terminal side adsorption portion 52C located near the extension portion 512 on the positive side of the Y axis.

[0104] Here, if Figure 3 and Figure 4 As shown, the support member 61 which serves as the force point for pulling upward, i.e., the support member 61 of the starting point side lifting mechanism 60A, is arranged at a position on the opposite side of the direction of progress of peeling compared to the adsorption portion 52 which serves as the fulcrum for pulling upward, i.e., the starting point side adsorption portion 52A which is arranged at the position on the initial starting point side of peeling.

[0105] Therefore, a ripple is generated on the side surface of the superimposed substrate T which becomes the point of action of the pull-up (the portion which becomes the starting point of the peeling). Figure 3 Thus, the starting point side lifting mechanism 60A can pull the upper wafer W1 so as to lift it up from the outer edge of the upper wafer W1, thereby efficiently separating the upper wafer W1 from the lower wafer W2.

[0106] Furthermore, the first holding portion 50 is supported by the lifting mechanism 60, and the lifting mechanism 60 is supported by a support body 64. The support body 64 is supported by a fixing member (not shown) attached to the top of the peeling device 5.

[0107] Here, refer to Figure 4 The structure of the first holding portion 50 will be described in more detail. Figure 4 It is a schematic plan view of the first holding portion 50 according to the first embodiment.

[0108] The elastic member 51 includes a main body 511 and a plurality of (here, two) extending portions 512. The main body 511 has an opening 515 in the center for the third holding portion 100 to pass through. Here, the center of the main body 511 is a region including the center of the main body 511. A plurality of adsorption portions 52 are arranged on the lower surface of the main body 511, that is, on the surface facing the superimposed substrate T.

[0109] The plurality of (here, two) extension portions 512 are portions obtained by extending a portion of the outer periphery of the main body 511. Specifically, one of the two extension portions 512 is a portion obtained by extending a portion of the outer periphery of the main body 511 located at the initial starting point of the peeling (the outer periphery on the negative direction of the Y axis) toward the side opposite to the progress direction of the peeling (the negative direction of the Y axis). In addition, the other of the two extension portions 512 is a portion obtained by extending a portion of the outer periphery of the main body 511 located at the final end point of the peeling (the outer periphery on the positive direction of the Y axis) toward the progress direction of the peeling (the positive direction of the Y axis). The front ends of the plurality of extension portions 512 are respectively connected to the support members 61 of the lifting mechanism 60.

[0110] A plurality of (six in this case) adsorption portions 52 are disposed on the lower surface of the main body 511. Figure 4 As shown, the plurality of adsorption parts 52 include three starting point side adsorption parts 52A, two opening side adsorption parts 52B, and one end point side adsorption part 52C. The three starting point side adsorption parts 52A are arranged at the periphery of the outer periphery of the main body 511 at the position of the initial starting point side of the peeling (the periphery in the negative direction of the Y axis). Therefore, the three starting point side adsorption parts 52A adsorb the periphery of the outer periphery of the upper wafer W1 at the position of the initial starting point side of the peeling. The two opening side adsorption parts 52B are arranged around the opening 515 of the main body 511 in a direction (X axis direction) orthogonal to the direction of progress of the peeling (positive direction of the Y axis). One end point side adsorption part 52C is arranged at the periphery of the outer periphery of the main body 511 at the position of the final end point side of the peeling (the periphery in the positive direction of the Y axis). Therefore, one end point side adsorption part 52C adsorbs the periphery of the outer periphery of the upper wafer W1 at the position of the final end point side of the peeling. The six adsorption parts 52 are arranged in the order of three starting point side adsorption parts 52A, two opening side adsorption parts 52B, and one end point side adsorption part 52C along the progress direction of peeling (Y-axis direction). In this way, by arranging a plurality of adsorption parts 52 in accordance with the progress direction of peeling, the upper wafer W1 can be efficiently peeled from the lower wafer W2.

[0111] The suction portion 52A disposed at the initial starting point side (here, the negative direction side of the Y axis) of the peeling is disposed near the cutting portion 90 described later and close to the sharp member 91a (see Figure 3 ) abuts against the position of the portion where the sharp member 91a of the cutting portion 90 abuts against the side surface of the superimposed substrate T near the starting point side adsorption portion 52A disposed on the negative side of the Y axis. Here, an example of a case where six adsorption portions 52 are provided with respect to the elastic member 51 is shown, but the number of adsorption portions 52 provided on the elastic member 51 is not limited to six.

[0112] Return to Figure 3 , other structures of the peeling device 5 will be described. The second holding portion 70 is disposed below the first holding portion 50 and is used to adsorb and hold the lower wafer W2 in the superimposed substrate T. The second holding portion 70 includes a disk-shaped main body 71 and a support member 72 that supports the main body 71 .

[0113] The main body 71 is formed of a metal member such as aluminum. An adsorption surface 73 is provided on the upper surface of the main body 71. The adsorption surface 73 is formed to have a diameter substantially equal to the diameter of the lower wafer W2. The adsorption surface 73 is a porous body, for example, formed of a resin member such as PCTFE (polychlorotrifluoroethylene).

[0114] A suction space 74 is formed inside the main body 71 and communicates with the outside via the suction surface 73. The suction space 74 is connected to a suction device 76 such as a vacuum pump via a suction pipe 75. The second holding portion 70 uses the negative pressure generated by the suction of the suction device 76 to make the non-bonding surface W2n (see FIG. 1 ) of the lower wafer W2 Figure 2 ) is adsorbed on the adsorption surface 73, thereby adsorbing and holding the overlapping substrates T.

[0115] In addition, when a non-adsorption portion such as a groove is formed on the adsorption surface for the lower wafer W2, the lower wafer W2 may crack at the non-adsorption portion. Therefore, the adsorption surface 73 of the main body 71 is set as a flat surface without non-adsorption portions such as grooves. In this way, cracks can be prevented from occurring in the lower wafer W2.

[0116] Furthermore, since the suction surface 73 is formed of a resin member such as PCTFE, damage to the lower wafer W2 can be further suppressed.

[0117] The second holding part 70 is supported by the support member 72 and the rotary lifting mechanism 110 (an example of a rotary mechanism). The rotary lifting mechanism 110 rotates the second holding part 70 by rotating the support member 72 around the vertical axis. In addition, the rotary lifting mechanism 110 moves the support member 72 in the vertical direction to lift the second holding part 70.

[0118] The cutting portion 90 is disposed outside the second holding portion 70 and cuts into a side surface of the superimposed substrate T that is located at a position on the initial starting point side of the peeling.

[0119] The cutting unit 90 includes a blade 91, a moving mechanism 92, and a lifting mechanism 93. The blade 91 includes a sharp member 91a and a support 91b. The sharp member 91a is, for example, a flat blade, and is supported by the support 91b so that the blade tip protrudes horizontally toward the superimposed substrate T.

[0120] The moving mechanism 92 moves the blade 91 along a guide rail extending in the Y-axis direction. The lifting mechanism 93 is fixed to the support body 64, for example, and is used to move the moving mechanism 92 in the vertical direction. Thus, the height position of the blade 91, that is, the contact position with the side surface of the superimposed substrate T is adjusted.

[0121] Here, refer to Figure 5A to Figure 5C The content of the cutting process performed by the cutting unit 90 will be described in detail. Figure 5A to Figure 5C This is a diagram illustrating the action of the cut-in process.

[0122] In addition, the cutting process is performed before the lower wafer W2 in the overlapped substrate T is sucked and held by the second holding part 70 and the upper wafer W1 is sucked and held by the first holding part 50. That is, the cutting process is performed in a free state of the upper wafer W. In addition, the peeling device 5 performs the cutting process based on the control of the control device 30. Figure 5A to Figure 5C The cut-in process shown.

[0123] After the peeling device 5 uses the lifting mechanism 93 to adjust the height position of the blade 91, the peeling device 5 uses the moving mechanism 92 to move the blade 91 toward the side of the superimposed substrate T. Then, the peeling device 5 brings the sharp member 91a of the blade 91 into contact with the joint portion of the upper wafer W1 and the lower wafer W2 exposed on the side of the superimposed substrate T (see Figure 5A ).

[0124] Next, the peeling device 5 moves the blade 91 further forward so that the sharp member 91a is inserted into the side surface of the superimposed substrate T (see Figure 5B ). As a result, the upper wafer W1 is pushed upward along the curvature of the side surface. As a result, a portion of the upper wafer W1 is peeled off from the lower wafer W2 to form an incision N.

[0125] Furthermore, since the upper wafer W1 is not held by suction by the first holding portion 50 and is in a free state, the upward movement of the upper wafer W1 is not hindered.

[0126] When the incision N is formed, the peeling device 5 is then rotated and raised using the lifting mechanism 110 (see Figure 3 ) The second holding portion 70 is lowered while the sharp member 91a is further advanced. As a result, a downward force is applied to the lower wafer W2, and an upward force is applied to the upper wafer W1 supported by the sharp member 91a. As a result, the incision N is expanded.

[0127] In this manner, the peeling device 5 can form the incision N by causing the sharp member 91 a to come into contact with the side surface of the superimposed substrate T.

[0128] In addition, when the bonding force between the upper wafer W1 and the lower wafer W2 is relatively weak, the incision N can be formed simply by bringing the sharp member 91a into contact with the side surface of the superimposed substrate T. In such a case, the peeling device 5 can be omitted. Figure 5B and Figure 5C Action shown.

[0129] In addition, when the bonding force between the upper wafer W1 and the lower wafer W2 is relatively strong, the peeling device 5 can use the rotary lifting mechanism 110 to rotate the second holding portion 70 around the vertical axis to form multiple incisions N on the side of the overlapping substrate T. Figure 8 The details of this processing will be described below.

[0130] In addition, here, an example is described in which the cutting section 90 is controlled and the rotary lifting mechanism 110 is controlled to lower the second holding section 70 during the cutting process. This is not limited to this. During the cutting process, the second holding section 70 may not be lowered, and the lifting mechanism 93 of the cutting section 90 may be controlled to raise the blade 91. In addition, the second holding section 70 may be lowered and the blade 91 may be raised.

[0131] Return to Figure 3 , other structures of the peeling device 5 are described. The third holding portion 100 is arranged above the first holding portion 50 and is used to hold the non-bonding surface W1n (refer to Figure 2 The third holding unit 100 includes a main body 101, a plurality of suction plates 102 and a lifting mechanism 103.

[0132] The main body 101 is, for example, a cylindrical member, and passes through the opening 515 of the elastic member 51. The main body 101 supports a plurality of suction pads 102. The plurality of suction pads 102 are provided at the lower portion of the main body 101.

[0133] The lifting mechanism 103 moves the main body 101 in the vertical direction to lift the plurality of suction pads 102 supported by the main body 101. Specifically, the lifting mechanism 103 lifts the plurality of suction pads 102 between a standby position, a suction position for sucking the first substrate W1 after peeling held by the first holding portion 50, and a handover position for handing over the first substrate W1 sucked and held by the third holding portion 100 to the second conveying device 211. The lifting mechanism 103 is fixed to the upper portion of the support body 64, for example, and is supported by the support body 64.

[0134] According to the third holding unit 100 , it is possible to receive the peeled first substrate W1 from the first holding unit 50 , and stably deliver the received first substrate W1 to the second conveying device 211 .

[0135] The peeling device 5 involved in the first embodiment is constructed as described above. After using the cutting portion 90 to cut into the side of the overlapping substrate T, the adsorption portion 52 of the first holding portion 50 is moved in a direction close to the upper wafer W1 and the non-bonding surface W1n of the upper wafer W1 is adsorbed and held, and then the adsorption portion 52 is moved in a direction away from the upper wafer W1.

[0136] Here, use Figure 5A to Figure 5C The following will describe an example of the movement of the adsorption unit 52 in the conventional cutting process and adsorption process. Figure 5A As shown, in the conventional process, before forming the incision N on the side surface of the superimposed substrate T, the non-bonded surface W1n (see Figure 2 ) is set as the predetermined adsorption position of the adsorption unit 52. Then, a cutout N is formed on the side of the overlapping substrate T, as shown in FIG. Figure 5C As shown in FIG. 1 , when the second holding portion 70 moves from the height position P2 to the height position P4 , the planned adsorption position of the adsorption portion 52 is also changed from the height position P1 to the height position P3 .

[0137] After that, the adsorption part 52 descends to the height position P3 as the predetermined adsorption position, and adsorbs the non-bonding surface W1n of the upper wafer W1. However, at this time, a portion of the upper wafer W1 is lifted upward by the sharp member 91a, so there is a risk that the upper wafer W1 may be cracked by being pushed vertically downward by the adsorption part 52.

[0138] Therefore, the peeling device 5 according to the first embodiment monitors the suction state of the suction unit 52 to the upper wafer W1 while controlling the movement of the suction unit 52 , and stops the suction unit 52 from moving when the upper wafer W1 is suctioned. This can reduce the occurrence of cracks in the upper wafer W1 .

[0139] Next, use Figure 6 The movement control of the adsorption unit 52 by the control unit 31 according to the first embodiment will be described. Figure 6 1 is a diagram showing an example of the positions of the second holding portion 70 and the starting point side adsorption portion 52A in the vertical direction, the state of adsorption detection of the starting point side adsorption portion 52A by the detection portion 525, and the transition of the adsorption state of the starting point side adsorption portion 52A. Figure 6 In the figure, regarding the adsorption detection of the starting point side adsorption part 52A by the detection part 525, the case where the upper wafer W1 is detected to be adsorbed by the starting point side adsorption part 52A is set to "1", and the case where the upper wafer W1 is not detected to be adsorbed by the starting point side adsorption part 52A is set to "0".

[0140] like Figure 6As shown, in the first embodiment, the control unit 31 starts the cut-in process from time T0, and moves the second holding unit 70 from the height position P2 to the height position P4 at time T2 (see Figure 5C ). After that, the control unit 31 starts adsorption of the starting point side adsorption unit 52A from the time T2 when the second holding unit 70 reaches the height position P4, and at the same time moves the starting point side adsorption unit 52A from the standby position P5 to the speed change position P6 at the first speed. Here, the standby position P5 is a position separated from the upper wafer W1. Specifically, the standby position refers to a position higher than the height position of the upper surface (non-bonding surface W1n) of the upper wafer W1. The speed change position P6 is the position before the adsorption unit 52 contacts the upper wafer W1, and the speed change position P6 is closer to the upper wafer W1 than the standby position P5.

[0141] Afterwards, when the starting point side adsorption unit 52A reaches the speed change position P6, the control unit 31 moves the starting point side adsorption unit 52A toward the upper wafer W1 at a second speed that is slower than the first speed. Figure 6 As shown, the control unit 31 moves the starting point side suction unit 52A closer to the upper wafer W1 while repeating a process of moving the starting point side suction unit 52A at the second speed by a predetermined distance and then stopping the starting point side suction unit 52A.

[0142] Thereafter, when the detection unit 525 detects that the upper wafer W1 is sucked by the starting point side suction unit 52A at time T3 , the control unit 31 stops the movement of the starting point side suction unit 52A.

[0143] <Specific actions of the peeling system>

[0144] Next, refer to Figure 7 The specific operation of the peeling system 1 according to the first embodiment will be described. Figure 7 : is a flowchart showing the process performed by the peeling system 1 according to the first embodiment. Figure 10A to Figure 10O The schematic diagram shows an operation example of the peeling system 1 according to the first embodiment. Figure 7 Various treatments shown.

[0145] First, the control unit 31 carries out a loading process of the superimposed substrate T (step S101). In the loading process, the control unit 31 controls the second conveying device 211 (see Figure 1 ), the superimposed substrate T is transferred from the transfer station 21 to the peeling device 5, and the superimposed substrate T is placed on the suction surface 73 of the second holding portion 70. Then, the control unit 31 causes the non-bonding surface W2n (refer to Figure 2 ) is adsorbed on the adsorption surface 73 to adsorb and hold the overlapping substrates T.

[0146] Next, the control unit 31 performs a peeling process (step S102). In the peeling process, after the upper wafer W1 is held by the first holding unit 50 by suction, the control unit 31 controls the lifting mechanism 60 to move the first holding unit 50 away from the lower wafer W2. Thus, the upper wafer W1 is peeled from the superimposed substrate T.

[0147] Here, also refer to Figure 8 An example of a specific procedure of the peeling process in step S102 will be described. Figure 8 This is a flowchart showing an example of a specific procedure of the peeling process shown in step S102.

[0148] First, the control unit 31 refers to Figure 5A to Figure 5C In the first cutting process (step S201), the control unit 31 controls the cutting unit 90 to cut the side surface of the overlapping substrate T at the position of the starting point of the peeling (see Fig. 10A ).

[0149] Next, the control unit 31 performs a first suction process (step S202 ). In the first suction process, the control unit 31 controls the starting point side lifting mechanism 60A to lower the three starting point side suction units 52A and suction the three starting point side suction units 52A onto the upper wafer W1 .

[0150] Here, also refer to Fig. 9 An example of a specific process of the first adsorption treatment in step S202 will be described. Fig. 9 This is a flowchart showing an example of a specific procedure of the first adsorption process shown in step S202.

[0151] First, the control unit 31 performs a first movement process (step S301). In the first movement process, the control unit 31 controls the starting point side lifting mechanism 60A to move the three starting point side adsorption units 52A from the standby position to the speed change position at a first speed. At the same time, the control unit 31 starts to use the three starting point side adsorption units 52A for adsorption. In addition, the control unit 31 controls the end point side lifting mechanism 60B to move the end point side adsorption unit 52C from the standby position to the adsorption position for adsorbing the upper wafer W1 at a first speed (refer to Fig. 10B , Fig. 10C ). After the end-point side suction unit 52C reaches the suction position, the control unit 31 starts suction using the end-point side suction unit 52C.

[0152] Next, the control unit 31 starts the second movement process (step S302). In the second movement process, the control unit 31 controls the starting point side lifting mechanism 60A to make the three starting point side suction parts 52A start to move from the speed change position toward the direction close to the upper wafer W1 (Z-axis negative direction) at the second speed ( Fig. 10CSpecifically, the control unit 31 controls the starting point side lifting mechanism 60A to repeatedly move the three starting point side adsorption units 52A at the second speed for a predetermined distance and then stop the three starting point side adsorption units 52A, while making the three starting point side adsorption units 52A approach the upper wafer W1. For example, the time for stopping the starting point side adsorption units 52A is 0.5 seconds.

[0153] Next, the control unit 31 determines whether the upper wafer W1 is adsorbed by the three starting-side adsorption parts 52A based on the detection result of the detection unit 525 (step S303). Specifically, when the suction pressure of the adsorption disk 522 detected by the detection unit 525 is above the threshold, the control unit 31 determines that the upper wafer W1 is adsorbed by the three starting-side adsorption parts 52A. When the upper wafer W1 is adsorbed by the three starting-side adsorption parts 52A (step S303, "yes"), the control unit 31 performs a stop process (step S304). In the stop process, the control unit 31 controls the starting-side lifting mechanism 60A to stop the three starting-side adsorption parts 52A from moving (refer to Fig. 10D ) Hereinafter, in this process, the position where the three starting point side adsorption portions 52A are stopped is referred to as a “stop position”.

[0154] At this time, even in the middle of the second movement process of moving the starting point side adsorption unit 52A at the second speed for a predetermined distance, if it is determined based on the detection result of the detection unit 525 that the upper wafer W1 is adsorbed, the control unit 31 also executes the stop process of the starting point side adsorption unit 52A at the middle position.

[0155] As described above, the control unit 31 performs the second movement process after the first movement process, and in the second movement process, controls the starting point side lifting mechanism 60A to move the starting point side adsorption unit 52A from the speed change position in the direction close to the upper wafer W1 at the second speed. In addition, when the control unit 31 determines that the upper wafer W1 is adsorbed by the starting point side adsorption unit 52A based on the detection result of the detection unit 525 in the second movement process, the control unit 31 controls the starting point side lifting mechanism 60A to perform a stop process to stop the movement of the starting point side adsorption unit 52A.

[0156] In this way, the peeling system 1 according to the first embodiment allows the starting point side adsorption unit 52A to slowly approach the upper wafer W1 while monitoring the adsorption state of the starting point side adsorption unit 52A on the upper wafer W1, and stops the movement of the starting point side adsorption unit 52A when the upper wafer W1 is adsorbed. Thus, even when a portion of the upper wafer W1 is pushed upward by the cutting process, the starting point side adsorption unit 52A can be prevented from pushing the upper wafer W1 more than necessary, thereby reducing the occurrence of cracks in the upper wafer W1.

[0157] In addition, in the second moving process, the peeling system 1 according to the first embodiment repeatedly moves the starting point side adsorption unit 52A by a predetermined distance at a second speed and then stops the starting point side adsorption unit 52A, while bringing the starting point side adsorption unit 52A closer to the upper wafer W1. Even when the starting point side adsorption unit 52A reaches a position where the upper wafer W1 can be adsorbed, a time difference sometimes occurs from reaching the position to detecting that the upper wafer W1 is adsorbed by the starting point side adsorption unit 52A by the detection unit 525. This is because, for example, when the detection unit 525 is a pressure detection unit, it takes time from the starting point side adsorption unit 52A reaching a position where the upper wafer W1 can be adsorbed to reaching a suction pressure that can adsorb the upper wafer W1. Therefore, by performing the process of stopping the starting point side adsorption unit 52A, it is possible to wait for the detection result of the detection unit 525. As a result, it is possible to reduce the situation where the starting point side adsorption unit 52A pushes the upper wafer W1 more than necessary, thereby reducing the occurrence of cracks in the upper wafer.

[0158] In addition, an example is described here in which the starting point side adsorption unit 52A is moved closer to the upper wafer W1 while repeating the process of moving the starting point side adsorption unit 52A at the second speed for a predetermined distance and the process of stopping the starting point side adsorption unit 52A. Without being limited to this, in the second moving process, the starting point side adsorption unit 52A may be moved at the second speed in a direction closer to the upper wafer W1 instead of stopping.

[0159] In addition, the peeling system 1 according to the first embodiment only causes the starting point side adsorption unit 52A to perform the second movement process as described above, and the end point side adsorption unit 52C only moves from the standby position to the adsorption position at the first speed. As a result, the upper wafer W1 is not pushed upward on the side surface of the overlapping substrate T where the incision is not formed, so the possibility of cracks in the upper wafer W1 is low. Therefore, by directly lowering the end point side adsorption unit 52C to the adsorption position, the peeling process can be performed efficiently.

[0160] Return to Figure 8 Next, the control unit 31 performs a pull-up process (step S203). In the pull-up process, the control unit 31 controls the starting point side lifting mechanism 60A to pull the three starting point side adsorption parts 52A adsorbing the upper wafer W1 in a direction away from the second holding part 70 to a predetermined position (see Fig.10E The predetermined position is, for example, a position where cracks will not be generated in the upper wafer W1 by pulling up.

[0161] Next, the control unit 31 performs a pull-down process (step S204). In the pull-down process, the control unit 31 controls the starting point side lifting mechanism 60A to move the three starting point side suction parts 52A to close the stop process ( Fig. 9For example, the control unit 31 may move the three starting point side adsorption units 52A to the stop position. The control unit 31 may also move the three starting point side adsorption units 52A to a position vertically deviated from the stop position. Thereafter, the control unit 31 releases the adsorption of the three starting point side adsorption units 52A and the end point side adsorption units 52C on the upper wafer W1 (see Fig.10F ).

[0162] Next, the control unit 31 performs a separation process (step S205). In the separation process, the control unit 31 controls the starting point side lifting mechanism 60A to separate the three starting point side adsorption units 52A from the upper wafer W1 from the state where the adsorption of the upper wafer W1 is released (see Figure 10G ). Specifically, the control unit 31 controls the starting point side lifting mechanism 60A to move the three starting point side adsorption units 52A to the standby position.

[0163] Next, the control unit 31 performs a rotation process (step S206). In the rotation process, the control unit 31 controls the moving mechanism 92 to move the blade 91 in a direction away from the side of the superimposed substrate T. Thereafter, the control unit 31 controls the rotating lifting mechanism 110 to rotate the superimposed substrate T held by the second holding unit 70 within a range less than 360 degrees (see Fig. 10H ). For example, in this example, the control unit 31 rotates the superimposed substrate T by 180 degrees.

[0164] Next, the control unit 31 performs a second cutting process (step S207). In the second cutting process, the control unit 31 controls the cutting unit 90 in the same manner as in the first cutting process to cut into the side surface of the overlapping substrate T at the position of the starting point side of the peeling (refer to Fig.10I ).

[0165] Next, the control unit 31 performs a second adsorption process (step S208). In the second adsorption process, the control unit 31 performs the same process as the first adsorption process. Fig. 9 The first movement process, the second movement process and the stop process shown in FIG. Figure 10J to Figure 10M ). At this time, the control unit 31 may perform the first moving process, the second moving process, and the stopping process based on the position information including the shift position and the stopping position of the starting point side adsorption unit 52A in the first adsorption process.

[0166] For example, in the second adsorption process, the control unit 31 may change the shift position based on the stop position where the starting point side adsorption unit 52A is stopped in the stop process in the first adsorption process. Specifically, the position between the shift position and the stop position of the starting point side adsorption unit 52A in the first adsorption process may be set as the shift position of the starting point side adsorption unit 52A in the second adsorption process. In this case, the distance from the shift position to the stop position in the second movement process of the second adsorption process is shorter than the distance from the shift position to the stop position in the second movement process of the first adsorption process, so that the starting point side adsorption unit 52A can be moved more efficiently than in the first adsorption process.

[0167] Alternatively, in the second adsorption process, the control unit 31 may move the starting point side adsorption unit 52A from the standby position to the stop position of the starting point side adsorption unit 52A in the first adsorption process without performing the first movement process and the second movement process. Specifically, the control unit 31 controls the starting point side lifting mechanism 60A to move the starting point side adsorption unit 52A from the standby position to the stop position of the starting point side adsorption unit 52A in the first adsorption process at a first speed. Afterwards, when it is determined based on the detection result of the detection unit 525 that the upper wafer W1 is adsorbed by the starting point side adsorption unit 52A, the next process can be directly entered.

[0168] Next, the control unit 31 performs the final pull-up process (step S209). In the final pull-up process, the control unit 31 controls the starting point side lifting mechanism 60A to start the pull-up of the three starting point side adsorption units 52A. After that, the control unit 31 controls the end point side lifting mechanism 60B to pull the end point side adsorption unit 52C upward. As a result, the peeling progresses continuously from the end of the upper wafer W1 on the negative side of the Y axis toward the end on the positive side of the Y axis, and finally the upper wafer W1 is peeled off from the overlapping substrate T (refer to Fig.10N , Fig.10O ).

[0169] As described above, the peeling system 1 according to the first embodiment can more reliably peel the overlapping substrates T with high adhesive strength by repeating the combination of the cutting process and the adsorption process at least twice in the peeling process. In addition, in this case, as described above, in the adsorption process from the second time onwards, the starting point side adsorption unit 52A can be moved based on the position information of the starting point side adsorption unit 52A in the previous adsorption process. Therefore, the peeling operation can be performed more efficiently.

[0170] Furthermore, when the combination of the cutting process and the adsorption process is performed two or more times as described above, for example, the control unit 31 can rotate the superimposed substrate T by a rotation angle corresponding to the number of combinations of the cutting process and the adsorption process during the rotation process. For example, when the combination of the cutting process and the adsorption process is performed three times, the control unit 31 can rotate the superimposed substrate T by 120 degrees, which is a value obtained by dividing 360 degrees by 3, during the rotation process. Thus, the cutting can be performed at equal intervals on the side surface of the superimposed substrate T.

[0171] Return to Figure 7 , the subsequent actions of the peeling system 1 are described. Next, the control unit 31 performs the unloading process of the upper wafer W1 and the lower wafer W2 after peeling (step S103). In the unloading process of the lower wafer W2, the control unit 31 releases the adsorption holding by the second holding unit 70 and moves the second holding unit 70 to the handover position. Thereafter, the control unit 31 controls the second transport device 211 (see Figure 1 ) to move the peeled lower wafer W2 out of the peeling device 5 and transport it to the delivery station 21.

[0172] Next, in the unloading process of the upper wafer W1, the control unit 31 controls the lifting mechanism 103 to lower the suction plate 102 of the third holding unit 100 to the vicinity of the upper wafer W1. Thereafter, the control unit 31 causes the non-bonding surface W1n of the upper wafer W1 to be adsorbed on the suction plate 102 of the third holding unit 100. Thereafter, the control unit 31 releases the adsorption of the upper wafer W1 by the adsorption unit 52 of the first holding unit 50. As a result, the upper wafer W1 is adsorbed and held by the suction plate 102 of the third holding unit 100. Thereafter, the control unit 31 causes the suction plate 102 of the third holding unit 100 to be lowered to the handover position of the second conveying device 211. Thereafter, the control unit 31 controls the second conveying device 211 to carry out the peeled upper wafer W1 from the peeling device 5 and convey it to the handover station 21.

[0173] As described above, the peeling system 1 according to the first embodiment allows the starting point side adsorption unit 52A to slowly approach the upper wafer W1 while monitoring the adsorption state of the starting point side adsorption unit 52A on the upper wafer W1, and stops the movement of the starting point side adsorption unit 52A when the upper wafer W1 is adsorbed. Thus, even when a portion of the upper wafer W1 is pushed upward by the cutting process, the starting point side adsorption unit 52A can be prevented from pushing the upper wafer W1 more than necessary, thereby reducing the occurrence of cracks in the upper wafer W1.

[0174] (Second Embodiment)

[0175] The peeling device 5 may also include a sensor for detecting the upper wafer W1 . Furthermore, the peeling device 5 may detect the completion of peeling of the upper wafer W1 using the sensor.

[0176] Next, use Fig.11 and Fig.12 A configuration example of the above-mentioned sensor will be described. Fig.11 It is a schematic side view showing the positional relationship among the superimposed substrate T, the adsorption portion 52 of the first holding portion 50 , and the sensor 120 according to the second embodiment. Fig.12 1 is a schematic plan view showing the positional relationship among the superimposed substrate T, the elastic member 51 of the first holding section 50 , and the sensor 120 according to the second embodiment.

[0177] The sensor 120 is, for example, a photoelectric sensor. Fig.11 and Fig.12 As shown in FIG. 1 , the sensor 120 includes a light projecting unit 121 for projecting light, and a light receiving unit 122 for receiving light from the light projecting unit 121. Fig.11 and Fig.12 In FIG. 1 , the optical axis of the light projected from the light projecting unit 121 is indicated by a single-dot chain line. Here, an example in which the sensor 120 is a transmissive photoelectric sensor is shown, but the sensor 120 may also be a reflective photoelectric sensor. In this case, the sensor 120 only needs to include a light projecting and receiving unit that projects and receives light, and a reflecting unit that reflects the light projected from the light projecting and receiving unit.

[0178] like Fig.11 As shown, the light projecting unit 121 and the light receiving unit 122 are arranged at positions that deviate from the plate surface on the upper wafer W1 side in the overlapping substrate T in the direction (Z-axis positive direction) in which the upper wafer W1 is moved by the first holding unit 50. The light projecting unit 121 is arranged on one end side of the overlapping substrate T. The light projecting unit 121 projects light in a manner parallel to the bonding surface of the upper wafer W1 and the lower wafer W2 in the overlapping substrate T. The light receiving unit 122 is arranged on the other end side of the overlapping substrate T. The light receiving unit 122 receives the light projected from the light projecting unit 121.

[0179] Here, an example is shown in which the light projecting unit 121 is arranged at one end side of the superimposed substrate T and the light receiving unit 122 is arranged at the other end side. However, the invention is not limited thereto, and the light receiving unit 122 may be arranged at one end side of the superimposed substrate T and the light projecting unit 121 may be arranged at the other end side.

[0180] Next, refer to Fig.13 and Fig.14 A process in which the control unit 31 detects completion of separation of the upper wafer W1 from the lower wafer W2 using the above-mentioned sensor 120 will be described. Fig.13 and Fig.14 1 is a schematic side view showing an example of the relationship between the upper wafer W1 and the sensor 120 during the peeling process.

[0181] The process of detecting the completion of the peeling of the upper wafer W1 is performed in parallel with the peeling process. Next, an operation example of the sensor 120 is described when the peeling guide process (cut-in process) is performed once in the peeling process as described in Patent Document 1 and then the suction movement process is performed by the suction unit.

[0182] Specifically, first, in the peeling guide process after the peeling process starts, when the light projecting unit 121 projects light, the light receiving unit 122 receives the light from the light projecting unit 121 and sends a signal indicating that the light has been received to the control unit 31. Thereafter, when the control unit 31 controls the starting point side lifting mechanism 60A to start the process of moving a part of the outer peripheral portion of the first holding unit 50 in a direction away from the second holding unit 70, the light from the light projecting unit 121 is blocked by the upper wafer W1 in the peeling process, and the light receiving unit 122 cannot receive the light, and the light receiving unit 122 sends a signal indicating that the light has not been received to the control unit 31 (refer to Fig.13 ). Afterwards, when the stripping process is completed, when the light projecting unit 121 projects light, the light receiving unit 122 receives the light from the light projecting unit 121 and sends a signal indicating that the light has been received to the control unit 31 (refer to Fig.14 ).

[0183] That is, in the above example, during the peeling process of the upper wafer W1, when the light projected from the light projecting part 121 is received by the light receiving part 122 after the light receiving part 122 fails to receive the light projected from the light projecting part 121, the control part 31 can determine that the peeling of the upper wafer W1 is completed.

[0184] However, when the peeling process of the upper wafer W1 becomes more complicated, if the completion of the peeling is determined based only on the detection result from the sensor 120 as described above, an erroneous determination may occur. Specifically, in the peeling process described in the first embodiment, the cutting process, the adsorption process, and the pull-up process are performed multiple times (see Figure 8 ). When a portion of the upper wafer W1 is pulled upward in the first pull-up process, the light from the light-projecting unit 121 is blocked, and the light-receiving unit 122 cannot receive the light. Thereafter, in the pull-down process, when a portion of the upper wafer W1 is pulled downward and the light-receiving unit 122 receives the light projected from the light-projecting unit 121, the control unit 31 may mistakenly determine that the peeling of the upper wafer W1 is completed.

[0185] Therefore, the peeling system 1 according to the second embodiment determines whether the peeling of the upper wafer W1 from the lower wafer W2 is completed based on the detection result from the sensor 120 and the position or movement direction of the first holding part relative to the second holding part. Figure 8 , Figure 10 and Fig.15 The process of determining whether the peeling is completed will be described. Fig.151 is a flowchart showing the procedure of the peeling completion determination process of the peeling system 1 according to the second embodiment.

[0186] First, a process of determining whether the peeling of the upper wafer W1 is completed based on the detection result from the sensor 120 and the position of the first holding part 50 relative to the second holding part 70 will be described.

[0187] exist Figure 8 In the peeling process shown, when a portion of the upper wafer W1 is pulled upward by the pull-up process, the light from the light-emitting unit 121 is blocked, and the light-receiving unit 122 cannot receive the light. Specifically, in the pull-up process (step S203) or the final pull-up process (step S209), the light-receiving unit 122 cannot receive the light from the light-emitting unit 121, and sends a signal to the control unit 31 indicating that the light is not received.

[0188] Then, a portion of the upper wafer W1 is pulled downward by a pull-down process (step S204) (see Fig.10F ), or by a final pull-up process (step S209) to completely peel off the upper wafer W1 from the lower wafer W2 ( Fig.10O ), whereby the light receiving unit 122 receives the light from the light projecting unit 121 and sends a signal indicating that the light has been received to the control unit 31.

[0189] In this case, the control unit 31 determines whether the peeling of the upper wafer W1 from the lower wafer W2 is completed based on the position of the first holding unit 50. Specifically, if the first holding unit 50 is located above the light projected from the light projecting unit 121, the control unit 31 determines that the peeling is completed. For example, in the case of the above-mentioned final pull-up process, since the first holding unit 50 is located above the light projected from the light projecting unit 121, it is determined that the peeling is completed. On the other hand, in the case of the pull-down process, since the first holding unit 50 is located below the light projected from the light projecting unit 121, it is determined that the peeling is not completed. In addition, in order to detect the position of the first holding unit 50, for example, a camera unit for photographing the overlapping substrates T from the side can be used.

[0190] Next, a description will be given of a process of determining whether the separation of the upper wafer W1 is completed based on the detection result from the sensor 120 and the moving direction of the first holding unit 50 relative to the second holding unit 70 .

[0191] Similar to the case of determining based on the position of the first holding portion, when the light projected from the light projecting portion 121 is received by the light receiving portion 122 after the light receiving portion 122 fails to receive the light projected from the light projecting portion 121 due to a portion of the upper wafer W1 being pulled upward, if the first holding portion 50 moves in a direction away from the second holding portion 70, the control portion 31 determines that the peeling is completed. For example, in the case of the above-mentioned final pull-up process, the first holding portion 50 (especially the end-side suction portion 52C) moves in a direction away from the second holding portion 70, so the peeling is determined to be completed. On the other hand, in the case of the pull-down process, the first holding portion 50 (especially the start-side suction portion 52A) moves in a direction close to the second holding portion 70, so the peeling is determined to be incomplete. In addition, in order to detect the moving direction of the first holding portion, for example, a camera for photographing the overlapping substrates T from the side can be used.

[0192] In addition, the control unit 31 can also determine whether the peeling of the upper wafer W1 is completed based on the moving speed of the first holding unit including the moving direction of the first holding unit. Specifically, the control unit 31 can determine whether the peeling of the upper wafer W1 is completed based on the relative speed of the first holding unit 50 relative to the second holding unit 70. Fig.15 1 is a flowchart showing an example of a process in which it is determined whether the peeling of the upper wafer W1 is completed based on the relative speed of the first holding unit 50 with respect to the second holding unit 70 .

[0193] In addition, when the light projected from the light projecting section 121 is received by the light receiving section 122 after the light receiving section 122 fails to receive the light projected from the light projecting section 121 due to a portion of the upper wafer W1 being pulled upward during the peeling process, Fig.15 For example, in the application Figure 8 In the case of a peeling process, it starts in the pull-down process or the final pull-up process as described above.

[0194] In the following description, the relative speed of the starting point side adsorption unit 52A with respect to the second holding unit 70 is a value obtained by subtracting the moving speed of the second holding unit 70 in the vertical direction from the moving speed of the starting point side adsorption unit 52A in the vertical direction when the vertical positive direction is the positive direction, and the relative speed of the terminal side adsorption unit 52C of the first holding unit 50 with respect to the second holding unit 70 is a value obtained by subtracting the moving speed of the second holding unit 70 in the vertical direction from the moving speed of the terminal side adsorption unit 52C in the vertical direction when the vertical positive direction is the positive direction. In the following, the relative speed of the starting point side adsorption unit 52A with respect to the second holding unit 70 is referred to as "V1", and the relative speed of the terminal side adsorption unit 52C with respect to the second holding unit 70 is referred to as "V2".

[0195] First, the control unit 31 determines whether V1>0 (step S401). For example, when the starting point side adsorption unit 52A moves away from the second holding unit 70, V1>0, and when the starting point side adsorption unit 52A stops or moves toward the second holding unit 70, V1≤0. Figure 8 In the case of the peeling process, in the pull-down process, V1≤0, and in the final pull-up process, V1>0.

[0196] If V1>0 (step S401, YES), the control unit 31 advances the process to step S402, and if V1≤0 (step S401, NO), the control unit 31 advances the process to step S403.

[0197] Next, the control unit 31 determines whether V2 ≥ 0 (step S402). For example, when the end point side adsorption unit 52C moves away from the second holding unit 70 or stops, V2 ≥ 0, and when the end point side adsorption unit 52C moves toward the second holding unit 70, V2 < 0. Figure 8 In the case of a peeling process, in the final pull-up process, V2 ≥ 0.

[0198] If V2 ≥ 0 (step S402, "Yes"), the control unit 31 determines that the peeling is completed (step S404) and ends the process. On the other hand, if V2 < 0 (step S402, "No"), the control unit 31 determines that the peeling is not completed (step S405) and ends the process.

[0199] Next, the control unit 31 determines whether V2>-V1 (step S403). For example, when the end-side adsorption unit 52C moves in a direction away from the second holding unit 70 and the moving speed is faster than the moving speed of the starting-side adsorption unit 52A, V2>-V1; when the end-side adsorption unit 52C stops and the speed at which the starting-side adsorption unit 52A moves toward the second holding unit 70 is faster than the speed at which the end-side adsorption unit 52C moves away from the second holding unit 70, V2≤-V1. Therefore, in the case of applying Figure 8 In the case of a peeling process, in the pull-down process, V2 ≤ -V1.

[0200] If V2>-V1 (step S403, "Yes"), the control unit 31 determines that the peeling is completed (step S404) and ends the process. On the other hand, if V2≤-V1 (step S403, "No"), the control unit 31 determines that the peeling is not completed (step S406) and ends the process.

[0201] As described above, after the stripping process starts, when the light projected from the light projecting unit 121 is received by the light receiving unit 122 after the light receiving unit 122 fails to receive the light projected from the light projecting unit 121, if V1>0 and V2≥0 or V1≤0 and V2>-V1, it is determined that the stripping is completed.

[0202] In addition, for example, the control unit 31 may obtain information on the moving distance and moving speed of the first holding unit 50 and the moving distance and moving speed of the second holding unit 70 during the stripping process from process information representing the contents of the stripping process stored in the storage unit 32, and calculate the relative speed of the first holding unit 50 with respect to the second holding unit 70 based on the obtained information.

[0203] In addition, the example described here uses the relative speed of the first holding unit 50 to the second holding unit 70 to determine the completion of the peeling. However, the present invention is not limited to this, and the completion of the peeling may be determined using only the moving speed of the first holding unit 50 without considering the moving speed of the second holding unit 70.

[0204] As described above, after the peeling process starts, the peeling system 1 according to the second embodiment determines whether the peeling of the upper wafer W1 from the lower wafer W2 is completed based on the position or moving direction of the first holding part 50 relative to the second holding part 70, when the light projected from the light projecting part 121 is received by the light receiving part 122 after the light receiving part 122 stops receiving the light projected from the light projecting part 121 due to the peeling of a part of the upper wafer W1 from the lower wafer W2. Thus, the peeling device 5 according to the second embodiment can reduce erroneous determination of the peeling completion.

[0205] In addition, the stripping completion detection process is applied to Figure 8 Although the example of the peeling process of is described, the present invention is not limited to this, and the peeling completion detection process can also be applied to the peeling process in which the peeling guide process and the adsorption movement process are performed once as described in Patent Document 1.

[0206] The embodiments disclosed herein should be considered to be non-illustrative and non-restrictive in all aspects. In fact, the above embodiments can be implemented in a variety of ways. In addition, the above embodiments can be omitted, replaced, and changed in various ways without departing from the attached claims and their purport.

[0207] Furthermore, the present disclosure can achieve the following structures.

[0208] (1) A peeling device comprising:

[0209] A cutting section that cuts by inserting a sharp member into a side surface of a superimposed substrate formed by bonding the first substrate and the second substrate, at a position on the initial starting point side of the peeling;

[0210] A first holding portion for holding the first substrate in the overlapped substrates by suction, the first holding portion comprising a starting point side suction portion for sucking the periphery of the outer peripheral portion of the first substrate located at the starting point side of the initial peeling, and a starting point side lifting mechanism for lifting the starting point side suction portion;

[0211] A second holding portion, which adsorbs and holds the second substrate in the overlapping substrates;

[0212] a detection unit configured to detect adsorption of the first substrate by the starting point side adsorption unit; and

[0213] a control unit that performs a cutting process and an adsorption process after the cutting process, wherein the control unit controls the cutting unit to perform the cutting on a side of the overlapping substrate that is located at a position on the starting point side of the peeling, and wherein the control unit controls the starting point side lifting mechanism to lower the starting point side adsorption unit and adsorb it to the first substrate.

[0214] Among them, the control unit performs the following processing in the adsorption process: a first movement processing, controlling the starting point side lifting mechanism to move the starting point side adsorption unit at a first speed from a standby position separated from the first substrate to a speed change position before contacting the first substrate, and the speed change position is closer to the first substrate than the standby position; a second movement processing, after the first movement processing, controlling the starting point side lifting mechanism to move the starting point side adsorption unit from the speed change position to a direction close to the first substrate at a second speed slower than the first speed; and a stop processing, when it is determined that the first substrate is adsorbed by the starting point side adsorption unit based on the detection result of the detection unit in the second movement processing, the starting point side lifting mechanism is controlled to stop the movement of the starting point side adsorption unit.

[0215] (2) The peeling device according to (1), wherein:

[0216] In the second movement process, the control unit controls the starting point side lifting mechanism to move the starting point side adsorption unit close to the first substrate while repeatedly moving the starting point side adsorption unit by a predetermined distance and then stopping the starting point side adsorption unit.

[0217] (3) The peeling device according to (2), wherein:

[0218] The control unit executes the stop process when determining that the first substrate is adsorbed by the start-side adsorption unit based on the detection result of the detection unit in the process of moving the start-side adsorption unit by a predetermined distance.

[0219] (4) The peeling device according to any one of (1) to (3), wherein:

[0220] The first holding portion comprises:

[0221] an end point side suction portion that suctions a peripheral edge of an outer peripheral portion of the first substrate located at a final end point of the peeling; and

[0222] The terminal side lifting mechanism causes the terminal side adsorption part to be lifted and lowered.

[0223] The control unit controls the end-side lifting mechanism to move the end-side adsorption unit from the standby position to an adsorption position for adsorbing the first substrate at the first speed.

[0224] (5) The peeling device according to any one of (1) to (4), wherein:

[0225] further comprising a rotating mechanism for rotating the second holding portion,

[0226] The control unit repeats the combination of the cutting-in process and the adsorption process at least twice, and between the cutting-in process and the adsorption process and the next cutting-in process and the adsorption process, the control unit performs the following processes: a pulling-up process, controlling the starting point side lifting mechanism to pull up the starting point side adsorption portion in a state of adsorbing the first substrate; a pulling-down process, after the pulling-up process, controlling the starting point side lifting mechanism to move the starting point side adsorption portion to a position close to the position where the starting point side adsorption portion is stopped in the stopping process; a separation process, after the pulling-down process, controlling the starting point side lifting mechanism to separate the starting point side adsorption portion in a state of releasing the adsorption of the first substrate from the first substrate; and a rotation process, after the separation process, controlling the rotating mechanism to rotate the overlapping substrates within a range less than 360 degrees.

[0227] (6) The peeling device according to (5), wherein:

[0228] In the next adsorption process, the control unit changes the speed change position based on the position at which the start point side adsorption unit was stopped in the stop process in the past adsorption process.

[0229] (7) The peeling device according to (5), wherein:

[0230] In the next suction process, the control unit moves the starting point side suction unit to the position where the starting point side suction unit was stopped in the stop process in the previous suction process without performing the first movement process and the second movement process.

[0231] (8) A peeling system comprising:

[0232] A loading and unloading station for loading a superimposed substrate formed by bonding a first substrate and a second substrate;

[0233] a substrate transport device that transports the superimposed substrate placed on the loading / unloading station; and

[0234] a peeling device for peeling the overlapping substrates conveyed by the substrate conveying device into the first substrate and the second substrate,

[0235] Wherein, the stripping device comprises:

[0236] A cutting section that inserts a sharp member into a side surface of the overlapped substrate at a position on the initial starting point side of the peeling to perform cutting;

[0237] A first holding portion for holding the first substrate in the overlapped substrates by suction, the first holding portion comprising a starting point side suction portion for sucking the periphery of the outer peripheral portion of the first substrate located at the starting point side of the initial peeling, and a starting point side lifting mechanism for lifting the starting point side suction portion;

[0238] A second holding portion, which adsorbs and holds the second substrate in the overlapping substrates;

[0239] a detection unit configured to detect adsorption of the first substrate by the starting point side adsorption unit; and

[0240] a control unit that performs a cutting process and an adsorption process after the cutting process, wherein the control unit controls the cutting unit to perform the cutting on a side of the overlapping substrate that is located at a position on the starting point side of the peeling, and wherein the control unit controls the starting point side lifting mechanism to lower the starting point side adsorption unit and adsorb it to the first substrate.

[0241] Among them, the control unit performs the following processing in the adsorption process: a first movement processing, controlling the starting point side lifting mechanism to move the starting point side adsorption unit at a first speed from a standby position separated from the first substrate to a speed change position before contacting the first substrate, and the speed change position is closer to the first substrate than the standby position; a second movement processing, after the first movement processing, controlling the starting point side lifting mechanism to move the starting point side adsorption unit from the speed change position to a direction close to the first substrate at a second speed slower than the first speed; and a stop processing, when it is determined that the first substrate is adsorbed by the starting point side adsorption unit based on the detection result of the detection unit in the second movement processing, the starting point side lifting mechanism is controlled to stop the movement of the starting point side adsorption unit.

[0242] (9) A peeling method for peeling a first substrate and a second substrate into the first substrate and the second substrate. The peeling method comprises the following steps:

[0243] Adsorbing and holding the second substrate in the superimposed substrates using a second holding portion for adsorbing and holding the second substrate;

[0244] Using a cutting portion for inserting a sharp member into the side of the overlapping substrate located at the initial starting point of the peeling to cut, the cutting is performed on the side of the overlapping substrate located at the initial starting point of the peeling; and

[0245] After the cutting process is performed, the starting point side adsorption part is lowered and adsorbed to the first substrate using a starting point side lifting mechanism for lifting the starting point side adsorption part, wherein the starting point side adsorption part is used to adsorb the peripheral edge of the peripheral part of the first substrate located at the starting point side of the initial peeling.

[0246] The process of adsorbing the first substrate includes the following steps:

[0247] Controlling the starting point side lifting mechanism to move the starting point side adsorption portion at a first speed from a standby position separated from the first substrate to a speed change position before contacting the first substrate, the speed change position being closer to the first substrate than the standby position;

[0248] After the step of moving at the first speed, controlling the starting point side lifting mechanism to move the starting point side adsorption portion from the speed change position toward the first substrate at a second speed slower than the first speed; and

[0249] When, in the process of moving at the second speed, it is determined based on the detection result of the detection unit for detecting the adsorption of the first substrate by the starting point side adsorption unit that the first substrate is adsorbed by the starting point side adsorption unit used to adsorb and hold the first substrate in the overlapping substrates, the starting point side lifting mechanism is controlled to stop the movement of the starting point side adsorption unit.

[0250] Description of Reference Numerals

[0251] 1: peeling system; 5: peeling device; 12a: first conveying device; 30: control device; 31: control unit; 32: storage unit; 50: first holding unit; 52A: starting point side adsorption unit; 52C: end point side adsorption unit; 60A: starting point side lifting mechanism; 60B: end point side lifting mechanism; 70: second holding unit; 71: main body; 72: support member; 90: cutting part; 91: blade; 91a: sharp member; 92: moving mechanism; 93: lifting mechanism; 120: sensor; 121: light projecting unit; 122: light receiving unit; 521: main body; 522: adsorption disk; 525: detection unit.

Claims

1. A stripping device comprising: A cutting section that cuts by inserting a sharp member into a side surface of a superimposed substrate formed by bonding the first substrate and the second substrate, at a position on the initial starting point side of the peeling; A first holding portion for holding the first substrate in the overlapped substrates by suction, the first holding portion comprising a starting point side suction portion for sucking the periphery of the outer peripheral portion of the first substrate located at the starting point side of the initial peeling, and a starting point side lifting mechanism for lifting the starting point side suction portion; A second holding portion, which adsorbs and holds the second substrate in the overlapping substrates; a detection unit configured to detect adsorption of the first substrate by the starting point side adsorption unit; as well as a control unit that performs a cutting process and an adsorption process after the cutting process, wherein the control unit controls the cutting unit to perform the cutting on a side of the overlapping substrate that is located at a position on the starting point side of the peeling, and wherein the control unit controls the starting point side lifting mechanism to lower the starting point side adsorption unit and adsorb it to the first substrate. Among them, the control unit performs the following processing in the adsorption process: a first movement processing, controlling the starting point side lifting mechanism to move the starting point side adsorption unit at a first speed from a standby position separated from the first substrate to a speed change position before contacting the first substrate, and the speed change position is closer to the first substrate than the standby position; a second movement processing, after the first movement processing, controlling the starting point side lifting mechanism to move the starting point side adsorption unit from the speed change position to a direction close to the first substrate at a second speed slower than the first speed; and a stop processing, when it is determined that the first substrate is adsorbed by the starting point side adsorption unit based on the detection result of the detection unit in the second movement processing, the starting point side lifting mechanism is controlled to stop the movement of the starting point side adsorption unit.

2. The stripping device according to claim 1, wherein: In the second movement process, the control unit controls the starting point side lifting mechanism to move the starting point side adsorption unit close to the first substrate while repeatedly moving the starting point side adsorption unit by a predetermined distance and then stopping the starting point side adsorption unit.

3. The stripping device according to claim 2, wherein: The control unit executes the stop process when determining that the first substrate is adsorbed by the start-side adsorption unit based on the detection result of the detection unit in the process of moving the start-side adsorption unit by a predetermined distance.

4. The stripping device according to claim 1, wherein: The first holding portion comprises: an end point side suction portion that suctions a peripheral edge of an outer peripheral portion of the first substrate located at a final end point of the peeling; and The terminal side lifting mechanism causes the terminal side adsorption part to be lifted and lowered. The control unit controls the end-side lifting mechanism to move the end-side adsorption unit from the standby position to an adsorption position for adsorbing the first substrate at the first speed.

5. The stripping device according to claim 1, wherein: further comprising a rotating mechanism for rotating the second holding portion, The control unit repeats the combination of the cutting-in process and the adsorption process at least twice, and between the cutting-in process and the adsorption process and the next cutting-in process and the adsorption process, the control unit performs the following processes: a pull-up process, controlling the starting point side lifting mechanism to pull up the starting point side adsorption portion in a state of adsorbing the first substrate; a pull-down process, after the pulling-up process, controlling the starting point side lifting mechanism to move the starting point side adsorption portion in a manner close to the position where the starting point side adsorption portion is stopped in the stopping process; a separation process, after the pull-down process, controlling the starting point side lifting mechanism to separate the starting point side adsorption portion in a state of releasing the adsorption of the first substrate from the first substrate; and a rotation process, after the separation process, controlling the rotation mechanism to rotate the overlapping substrates within a range less than 360 degrees.

6. The stripping device according to claim 5, wherein: In the next adsorption process, the control unit changes the speed change position based on the position at which the start point side adsorption unit was stopped in the stop process in the past adsorption process.

7. The stripping device according to claim 5, wherein: In the next suction process, the control unit moves the starting point side suction unit to the position where the starting point side suction unit was stopped in the stop process in the previous suction process without performing the first movement process and the second movement process.

8. A stripping system comprising: A loading and unloading station for loading a superimposed substrate formed by bonding a first substrate and a second substrate; a substrate transport device for transporting the superimposed substrate placed on the loading / unloading station; as well as a peeling device for peeling the overlapping substrates conveyed by the substrate conveying device into the first substrate and the second substrate, in, The stripping device comprises: A cutting section that inserts a sharp member into a side surface of the overlapped substrate at a position on the initial starting point side of the peeling to perform cutting; A first holding portion for holding the first substrate in the overlapped substrates by suction, the first holding portion comprising a starting point side suction portion for sucking the periphery of the outer peripheral portion of the first substrate located at the starting point side of the initial peeling, and a starting point side lifting mechanism for lifting the starting point side suction portion; A second holding portion, which adsorbs and holds the second substrate in the overlapping substrates; a detection unit configured to detect adsorption of the first substrate by the starting point side adsorption unit; as well as a control unit that performs a cutting process and an adsorption process after the cutting process, wherein the control unit controls the cutting unit to perform the cutting on a side of the overlapping substrate that is located at a position on the starting point side of the peeling, and wherein the control unit controls the starting point side lifting mechanism to lower the starting point side adsorption unit and adsorb it to the first substrate. The control unit performs the following processes in the adsorption process: a first movement process, controlling the starting point side lifting mechanism to move the starting point side adsorption unit at a first speed from a standby position separated from the first substrate to a speed change position before contacting the first substrate, the speed change position being closer to the first substrate than the standby position; a second movement process, after the first movement process, controlling the starting point side lifting mechanism to move the starting point side adsorption unit at a second speed slower than the first speed from the speed change position toward a direction close to the first substrate; and a stop process, when it is determined based on the detection result of the detection unit in the second movement process that the first substrate is adsorbed by the starting point side adsorption unit, controlling the starting point side lifting mechanism to stop the movement of the starting point side adsorption unit.

9. A peeling method for peeling a first substrate and a second substrate into the first substrate and the second substrate, the peeling method comprising the following steps: Adsorbing and holding the second substrate in the superimposed substrates using a second holding portion for adsorbing and holding the second substrate; The cutting is performed by using a cutting portion for inserting a sharp member into the side surface of the overlapped substrate located at the initial starting point side of the peeling, so as to perform the cutting on the side surface of the overlapped substrate located at the initial starting point side of the peeling; as well as After the cutting process is performed, the starting point side adsorption part is lowered and adsorbed to the first substrate using a starting point side lifting mechanism for lifting the starting point side adsorption part, wherein the starting point side adsorption part is used to adsorb the peripheral edge of the peripheral part of the first substrate located at the starting point side of the initial peeling. The process of adsorbing the first substrate includes the following steps: Controlling the starting point side lifting mechanism to move the starting point side adsorption portion at a first speed from a standby position separated from the first substrate to a speed change position before contacting the first substrate, the speed change position being closer to the first substrate than the standby position; After the step of moving at the first speed, controlling the starting point side lifting mechanism to move the starting point side adsorption portion from the speed change position toward the first substrate at a second speed slower than the first speed; and When, in the process of moving at the second speed, it is determined based on the detection result of the detection unit for detecting the adsorption of the first substrate by the starting point side adsorption unit that the first substrate is adsorbed by the starting point side adsorption unit used to adsorb and hold the first substrate in the overlapping substrates, the starting point side lifting mechanism is controlled to stop the movement of the starting point side adsorption unit.

Images