Embedded touch OLED display panel
By designing the disconnected touch device layer and the first electrode structure in the OLED display panel, combining the dielectric layer and the mesh contact metal layer, the application difficulties of Incell technology on the OLED display panel are solved, and efficient display and Energy consumption is reduced.
Patent Information
- Application Number
- CN202411303467.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-18
- Publication Date
- 2025-01-03
- Estimated Expiration
- 2044-09-18
AI Technical Summary
The prior art is difficult to apply the Incell technology to OLED display panels, resulting in problems of process complexity and insufficient performance.
Design an embedded touch OLED display panel, by introducing a disconnect structure of the touch device layer and the first electrode into the display panel, combining the dielectric layer and the mesh contact metal layer, to realize the POL-less structure and organic light emission The tight bonding of the layers reduces the thickness of the film layer and improves the light output efficiency, while using time-dividing signal transmission to reduce energy consumption.
The successful application of Incell technology to OLED display panels has improved the light output efficiency of the display panel, reduced the thickness of the film layer, simplified the process, avoided cracks and water and oxygen intrusion problems, and reduced the energy consumption of the display panel.
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Figure CN119255657A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of display technology, and in particular to an embedded touch-controlled OLED display panel. Background Art
[0002] Initially, touch and display were two separate technologies, namely, external touch technology (Out Cell Touch). Displays with touch functions required the touch panel and display panel to be bonded together, which resulted in a complex process and a display that was too thick. As a result, two touch technologies, the once cell touch screen and the in-cell touch screen, were created, which greatly reduced the complexity of the process.
[0003] With the emergence and development of OLED technology, Oncell technology can also be applied to OLED display panels, but its low-temperature process and low-water process limit the scope of application of touch control, and the product yield and performance are also affected. Incell technology can make up for the shortcomings of Oncell to a certain extent, but due to the conflict between Incell process and OLED process, it is difficult to realize the application of Incell technology on OLED display panels. Therefore, how to apply Incell technology to OLED display panels has become an urgent problem to be solved. Summary of the invention
[0004] The embodiments of the present application provide an embedded touch OLED display panel to solve the problem in the related art that it is difficult to apply the Incell technology to the OLED display panel.
[0005] To solve the above problems, the technical solutions provided by this application are as follows:
[0006] The present application provides an embedded touch OLED display panel, comprising:
[0007] substrate;
[0008] A pixel defining layer, located on one side of the substrate;
[0009] A touch device layer, located on a side of the pixel defining layer away from the substrate;
[0010] A first electrode is located on a side of the pixel defining layer away from the substrate, and the first electrode is used to emit electrons;
[0011] an encapsulation layer, located on a side of the first electrode away from the substrate;
[0012] The thickness of the touch control device layer is greater than the thickness of the first electrode, so that the first electrode is in a disconnected state at the position of the touch control device layer.
[0013] In one embodiment of the present application, the touch device layer includes:
[0014] A touch metal layer, located on a side of the pixel defining layer away from the substrate;
[0015] A negative photoresist layer, located on a side of the touch metal layer or the pixel defining layer away from the substrate;
[0016] The thickness of the negative photoresist layer is greater than the thickness of the first electrode.
[0017] In an embodiment of the present application, in the horizontal direction of the display panel, the touch metal layer is in a mesh structure, and the touch metal layer in the mesh structure is partially disconnected.
[0018] In an embodiment of the present application, the thickness of the touch metal layer is smaller than the thickness of the first electrode.
[0019] In an embodiment of the present application, an upper surface area of the touch metal layer is smaller than a lower surface area of the touch metal layer.
[0020] In one embodiment of the present application, an upper surface area of the negative photoresist layer is greater than a lower surface area of the negative photoresist layer.
[0021] In an embodiment of the present application, the minimum width of the touch metal layer is greater than the maximum width of the first electrode.
[0022] In an embodiment of the present application, the resistivity of the touch metal layer is smaller than the resistivity of the first electrode.
[0023] In one embodiment of the present application, the display panel further includes:
[0024] A driving device layer, located on one side of the substrate;
[0025] A second electrode is located at a side of the driving device layer away from the substrate;
[0026] The pixel defining layer is located on a side of the second electrode away from the substrate, the pixel defining layer is provided with a plurality of pixel openings arranged at intervals, and the second electrode is exposed through the pixel openings;
[0027] an organic light-emitting layer, located in the pixel opening and connected to the second electrode;
[0028] The first electrode is also located on a side of the organic light-emitting layer and the touch-control device layer away from the substrate.
[0029] In one embodiment of the present application, the driving device layer includes:
[0030] A contact metal connected to the second electrode;
[0031] A ground signal line layer, arranged at the same layer as the contact metal;
[0032] In the horizontal direction of the display panel, the contact metal and the ground signal line layer form a mesh structure together.
[0033] In one embodiment of the present application, it is characterized in that the embedded touch OLED display panel further includes:
[0034] A dielectric layer is located on a side of the driving device layer away from the substrate, and the dielectric layer is located between two second electrodes and connected to the second electrodes.
[0035] In an embodiment of the present application, the thickness of the dielectric layer is greater than the thickness of the second electrode.
[0036] In one embodiment of the present application, the embedded touch OLED display panel further includes:
[0037] A dielectric layer is located on a side of the pixel defining layer away from the substrate, and the touch control device layer is located on a side of the dielectric layer away from the substrate.
[0038] The beneficial effects of the present application are as follows: the present application applies the Incell technology to the OLED display panel, so that the distance between the POL-less structure and the organic light-emitting layer can be closer, which is convenient for improving the light extraction efficiency of the display panel and can also reduce the thickness of the thin film layer, which is beneficial for the bending of the OLED structure. In addition, the present application simultaneously carries the first electrode (ie, cathode) isolation connection high-conductivity metal design, so that the display panel can transmit VSS and DOT signals in time periods in one frame, which is beneficial for reducing the energy consumption of the display screen. BRIEF DESCRIPTION OF THE DRAWINGS
[0039] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.
[0040] Attached Figure 1 It is a schematic diagram of the planar structure of the Oncell touch display panel in the related art;
[0041] Attached Figure 2 It is a schematic diagram of the cross-sectional structure of an Oncell touch display panel in the related art;
[0042] Attached Figure 3This is a schematic diagram of a cross-sectional structure of an optional Incell touch display panel in an embodiment of the present application;
[0043] Attached Figure 4 A schematic diagram of the cross-sectional structure of another optional Incell touch display panel in an embodiment of the present application;
[0044] Attached Figure 5 This is a schematic diagram of the distribution of a touch metal layer in an optional Incell touch display panel in an embodiment of the present application;
[0045] Attached Figure 6 Based on Figure 3 A schematic diagram of a cross-sectional structure of an Incell touch display panel with a dielectric layer;
[0046] Attached Figure 7 Based on Figure 4 A schematic diagram of a cross-sectional structure of an Incell touch display panel with a dielectric layer;
[0047] Attached Figure 8 Based on Figure 3 A schematic cross-sectional structure diagram of another Incell touch display panel with a dielectric layer;
[0048] Attached Fig. 9 Based on Figure 4 A schematic cross-sectional structure diagram of another Incell touch display panel with a dielectric layer.
[0049] Description of the symbols in the accompanying drawings:
[0050] 100, display panel; 101, contact metal; 102, flat layer; 103, second electrode; 104, pixel defining layer; 105, organic light-emitting layer; 106, first electrode; 107, negative photoresist layer; 108, encapsulation layer; 109, touch metal layer; 110, ground signal line layer; 111, dielectric layer; 112, first inorganic encapsulation layer; 113, organic encapsulation layer; 114, second inorganic encapsulation layer. DETAILED DESCRIPTION
[0051] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.
[0052] Reference Figure 1 and Figure 2As shown, it is a plan view and a cross-sectional view of an OLED display panel using a self-capacitance direct touch structure (Self Capacitance Direct Oncell Touch, S-DOT) in the related art, that is, a covering surface touch screen design, which is a DOT process made on a thin film encapsulation (Thin Film Encapsulation, TFE), and adopts a double-layer mask (Mask) structure, namely a touch metal mask layer (TP Metal Mask) and a passivation mask layer (PASMask), wherein the touch metal mask layer is arranged on the encapsulation layer 108 of the OLED display panel, and the passivation mask layer is arranged on the encapsulation layer 108 of the OLED display panel and covers the touch metal mask layer, forming a self-capacitive structure, in which each capacitor node (also called a sensing electrode) is independent of each other and senses touch input separately, when the user touches the screen, only the capacitor node corresponding to the touch position will change, and other capacitor nodes remain stable. Although the cover surface touch OLED can also achieve more sensitive operation, since the touch function related structure is set above the thin film package, when it is necessary to integrate the POL-less (no polarizer) process in the OLED display panel, the POL-less structure can only be prepared above the touch function related structure, which will affect the light extraction efficiency of the display panel. In addition, in the cover surface OLED display panel, the deposition and coating of the film layer as the touch layer, although the technical difficulty is medium and easy to make, but due to the low adhesion between the touch layer and the encapsulation layer 108, cracks will occur, leading to water and oxygen intrusion.
[0053] Reference Figure 3 The present application provides an embedded OLED touch display panel, including: a substrate, a driving device layer, a contact metal 101, a flat layer 102, a second electrode 103, a pixel defining layer 104, an organic light emitting layer 105, a touch device layer, a first electrode 106, and an encapsulation layer 108. Each of the above layers can be composed of a single layer or multiple layers, and another layer can be further provided between each layer.
[0054] In the above-mentioned layers, a substrate (not shown in the figure) is used to support the various layers arranged on the substrate. The substrate has insulating properties and can be a rigid substrate or a flexible substrate that can be bent, folded, curled, etc. The material used for the flexible substrate may include polyimide, but is not limited to polyimide.
[0055] The driver device layer (not shown in the figure) is formed on the substrate, and the driver device layer includes a barrier layer, a buffer layer, a semiconductor, a gate insulating layer, a gate electrode, a first interlayer insulating layer, a source electrode, and a drain electrode. Among them, the semiconductor is divided into a channel region and a source region and a drain region formed on both sides of the channel. The channel region of the semiconductor is polysilicon without doping impurities, that is, an intrinsic semiconductor. The source region and the drain region are polysilicon doped with conductive impurities, that is, impurity semiconductors. The impurities doped in the source region and the drain region can be any of P-type impurities and N-type impurities.
[0056] Contact metal 101 (SD) is formed on the driving device layer. It should be noted that in one embodiment of the present application, the contact metal 101 may be a metal connected to the drain electrode through a contact hole for electrically connecting the drain electrode to the anode of the display panel; in addition, the contact metal 101 may also be a drain electrode, that is, the contact metal 101 may also be a part of the driving device layer, which is formed on the first interlayer insulating layer together with the source electrode, the source electrode is connected to the source region through the source contact hole, and the drain electrode is connected to the drain region through the drain contact hole. Among them, the source electrode and the drain electrode may be formed as multiple layers or a single layer of a low-resistance material such as Al, Ti, Mo, Cu, Ni or their alloys, or a material with high corrosion resistance. For example, the source electrode and the drain electrode may be a triple layer of Ti / Cu / Ti, Ti / Ag / Ti, Ti / Al / Ti or Mo / Al / Mo and others. In the driving device layer, the gate electrode, source electrode and drain electrode are respectively the control electrode, input electrode and output electrode of the thin film transistor in the display panel driving circuit and together with the semiconductor form a thin film transistor, the semiconductor of the thin film transistor includes a channel located between the source electrode and the drain electrode.
[0057] A planarization layer 102 (PLN) is formed on the driving device layer and covers the contact metal 101, and the planarization layer 102 has a through hole, and the contact metal 101 is exposed through the through hole; wherein the planarization layer 102 can be formed as a plurality of layers or a single layer formed, for example, of tetraethylorthosilicate (tetraethylorthosilicate, TEOS), silicon nitride or silicon oxide, and can be formed of an organic material with a low dielectric constant (such as polyimide).
[0058] The second electrode 103 is formed on the flat layer 102, and the second electrode 103 is connected to the contact metal 101 through the through hole, and the second electrode 103 can be the anode (ANO) of the organic light emitting diode of the display panel. The second electrode 103 includes a material with a high work function, such as: one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), etc. These conductive materials have a relatively high work function and are transparent. When the organic light emitting display device is a top emission organic light emitting display device, in addition to the conductive materials listed above, the second electrode 103 may also include a reflective material such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pb), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca) or a combination thereof. Therefore, the second electrode 103 may have a single-layer structure of the conductive material and the reflective material listed above, or may have a multilayer structure in which a single layer is stacked on each other.
[0059] A pixel defining layer 104 (PDL&PS) is formed on the second electrode 103, wherein the pixel defining layer 104 includes an opening through which at least a portion of the second electrode 103 is exposed, and the pixel defining layer 104 may include an organic material or an inorganic material. In an exemplary embodiment, the pixel defining layer 104 includes a material such as a photoresist, a polyimide resin, an acrylic resin, a silicon compound, or a polyacrylic resin.
[0060] The organic light emitting layer 105 is formed in the opening of the pixel defining layer 104 and connected to the second electrode 103. Specifically, the organic light emitting layer 105 is formed by a plurality of layers including one or more emission layers, a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL) and an electron injection layer (EIL). In the case where the organic emission layer includes all of the above layers, the hole injection layer (HIL) may be located on the second electrode 103 (i.e., the anode), and the hole transport layer (HTL), the emission layer, the electron transport layer (ETL) and the electron injection layer (EIL) may be sequentially laminated on the hole injection layer (HIL).
[0061] The first electrode 106 is used to emit electrons and is formed on the pixel defining layer 104 and the organic light emitting layer 105. The first electrode 106 is the cathode (Cath.) of the organic light emitting diode. Therefore, the second electrode, the organic light emitting layer 105 and the first electrode 106 form an organic light emitting element. According to the direction of light emitted by the organic light emitting element, the organic light emitting diode display can have any one of the top display type, the bottom display type and the dual display type.
[0062] The encapsulation layer 108 is formed on the first electrode 106. Specifically, the encapsulation layer 108 can be formed by alternately stacking one or more organic layers and one or more inorganic layers. Among them, the organic layer is formed by a polymer and can be, for example, a monomer composition that can also include a monomer based on a monoacrylate. In addition, the monomer composition can also include a well-known photoinitiator such as TPO, but the monomer composition is not limited thereto. The inorganic layer can be a laminated layer or a single layer including a metal oxide or a metal nitride. For example, the inorganic layer can include any one of SiNx, Al2O3, SiO2, and TiO2. The uppermost layer of the encapsulation layer 108 exposed to the outside can be formed by an inorganic layer to prevent moisture from being transmitted to the inside of the organic light-emitting diode display. The encapsulation layer 108 may include at least one sandwich structure, in which at least one organic layer is interposed between at least two inorganic layers. In addition, the encapsulation layer 108 may include at least one sandwich structure, in which at least one inorganic layer is interposed between at least two organic layers. In one embodiment of the present application, the encapsulation layer 108 includes: a first inorganic encapsulation layer 112 formed on the first electrode 106 and covering the second electrode 103; an organic encapsulation layer 113 formed on and covering the first inorganic encapsulation layer 112; and a second inorganic encapsulation layer 114 formed on and covering the organic encapsulation layer 113.
[0063] The touch device layer of the present application is formed on the pixel defining layer 104 and does not overlap with the organic light emitting layer 105 in the thickness direction of the display panel. Figure 4 As shown, the touch device layer is arranged at a non-opening position on the pixel defining layer 104, and the first electrode 106 is formed on the touch device layer. The thickness of the touch device layer is greater than the thickness of the first electrode 106, so that the first electrode 106 is disconnected at the position where the touch device layer is located. It should be noted that the touch device layer includes a touch metal layer 109 and a negative photoresist layer 107. Figure 3 and Figure 4 As shown, the touch metal layer 109 is located on the side of the pixel defining layer 104 away from the substrate, and the negative photoresist layer 107 is located on the touch metal layer 109 or the side of the pixel defining layer 104 away from the substrate. That is, the lower surface of the touch metal layer 109 is connected to the pixel defining layer 104, and the upper surface of the touch metal layer 109 is connected to the lower surface of the negative photoresist layer 107; or, there is no touch metal layer under the negative photoresist layer, and the negative photoresist layer is directly connected to the pixel defining layer. It should be noted that, referring to Figure 1 Each sensor contains many patterned touch metal layers. Figure 5 As shown, in the horizontal direction of the display panel, the touch metal layer is in a mesh structure. In order to improve the touch performance of the display panel, the touch metal layer in the mesh structure is partially disconnected (refer to Figure 5In the dotted box portion), only a negative photoresist layer needs to be set in the disconnected portion without setting a touch metal. Therefore, in order to disconnect the cathode, the thickness of the negative photoresist layer is greater than the thickness of the first electrode, so that the cathode material can be disconnected when the cathode is prepared, that is, the touch sensing circuit is embedded.
[0064] Reference Figure 3 and Figure 4 As shown, in some embodiments of the present application, in order to make the cathode material easier to be disconnected, in the thickness direction of the display panel, the area of the upper surface of the negative photoresist layer 107 is larger than the area of the lower surface of the negative photoresist layer 107. Optionally, in an embodiment of the present application, the cross-sectional shape of the negative photoresist layer 107 is made into an inverted trapezoid, the second electrode 103 only covers the upper surface of the negative photoresist layer 107, and the side surface of the negative photoresist layer 107 is covered by the encapsulation layer 108 and the upper and lower layers of the second electrode 103.
[0065] In some embodiments of the present application, it is necessary to ensure that the touch metal layer is connected to the first electrode, and it is also necessary to ensure that the first electrode is blocked by the negative photoresist. Therefore, the thickness of the touch metal layer is smaller than the thickness of the first electrode, and the area of the lower surface of the negative photoresist layer 107 is smaller than the area of the upper surface of the touch metal layer 109, so that the first electrode 106 covers the side surfaces on both sides of the touch metal layer 109 and part of the upper surface, and contacts the negative photoresist layer 107. Figure 3 As shown, in the array process of the display panel, after the pixel defining layer 104 is prepared, physical vapor deposition (PVD) deposition, photolithography (also known as photo process), dry etching, and removal of excess materials (Strip) of the touch metal layer 109 are performed to achieve patterning of the touch metal layer 109. In the thickness direction of the display panel, the area of the upper surface of the patterned touch metal layer 109 is smaller than that of the lower surface. Generally speaking, the cross-sectional shape of the touch metal layer 109 is a regular trapezoid, which can better form a connection between the first electrode and the touch metal layer. On this basis, a negative photoresist layer 107 is covered on the touch metal layer 109, and an inverted trapezoidal structure is formed after exposure and development. During the subsequent evaporation of the organic light-emitting material, the inverted trapezoidal negative photoresist layer 107 will cause the first electrode 106 (cathode) material to be disconnected, thereby realizing the patterning of the first electrode 106. At the same time, the disconnected first electrode 106 will overlap with the touch metal layer 109.
[0066] Through the above settings, during the display stage of one frame, the TP touch signal and the VSS signal can be time-division multiplexed to Figure 1For example, the sensor and the connecting wiring part include a double-layer structure of touch metal and the first electrode, while the blank part only includes the first electrode. In the double-layer structure part, the touch metal layer 109 and the patterned first electrode 106 overlapped therewith flow the TP touch signal in a very short time, and the touch metal layer 109 and the first electrode 106 flow the VSS signal in the remaining longer time of one frame. It should be noted that these two time periods are very short and do not affect the normal driving of the display panel; and in the place where only the first electrode is set, the VSS signal is supplied through the peripheral circuit or the circuit within the pixel.
[0067] It should be noted that the resistivity of the touch metal layer 109 is less than the resistivity of the first electrode 106. The touch metal layer 109 may be made of Ti / Al / Ti, with a thickness of about 400 nm and a surface resistance of about 0.1 Ω / mm. 2 The first electrode 106 is generally made of an extremely thin Mg / Ag alloy, and its surface resistivity is usually 8Ω / mm 2 Since the resistivity of the touch metal layer 109 is lower than that of the first electrode 106 , by overlapping the two and sending the VSS signal in different time periods, the drop of the VSS signal can be reduced to a certain extent, thereby reducing the energy consumption of the display panel.
[0068] In addition, a plurality of contact metals 101 are provided on the driving device layer, and a ground signal line layer 110 (VSS) is also provided in the flat layer 102. In addition to overlapping the anode for OLED display, the contact metal 101 also forms a mesh structure with the plurality of contact metals 101 and the ground signal line layer 110 to reduce the power consumption of VSS. Among them, the ground signal line layer 110 and the second electrode 103 both pass constant signals, which can largely shield the AC signals of the TFT below, etc., and reduce the coupling interference of the AC signal in the array substrate to the TP touch signal.
[0069] In order to further ensure the signal shielding effect of the display panel, the display panel further includes a dielectric layer 111 (IL1) for improving the shielding effect of the AC signal. The dielectric layer 111 can be made of silicon oxide material and is disposed on the flat layer 102. The preparation of the dielectric layer 111 can be carried out in the following manner:
[0070] Reference Figure 6 and Figure 7 As shown, the process of the dielectric layer 111 can be placed after the process of the second electrode 103 and before the process of the pixel defining layer 104, that is, the dielectric layer 111 is located between the two second electrodes 103 and connected to the two second electrodes 103, and the thickness of the dielectric layer 111 is greater than the thickness of the second electrode 103.
[0071] Reference Figure 8 and Fig. 9 As shown, the process of the dielectric layer 111 can also be set after the process of the pixel defining layer 104 and before the process of the touch metal layer 109, that is, the dielectric layer 111 is set on the pixel defining layer 104 and covered by the first electrode 106 and the touch metal layer 109.
[0072] The In-cell design of this application places the touch layer under the screen encapsulation layer 108, which not only simplifies the process of the OLED display panel and saves costs, but also avoids problems such as cracks and water and oxygen intrusion. The touch function is built into the process of the array substrate, so that the distance between the POL-less structure and the organic light-emitting film layer can be closer, which is convenient for improving the light extraction efficiency of the POL-less and reducing the thickness of the film layer, which is conducive to the bending of the OLED structure.
[0073] In summary, although the present application has been disclosed as above with preferred embodiments, the above preferred embodiments are not intended to limit the present application. Ordinary technicians in this field can make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application shall be based on the scope defined in the claims.
Claims
1. An embedded touch OLED display panel, characterized in that: include: substrate; A pixel defining layer, located on one side of the substrate; A touch device layer, located on a side of the pixel defining layer away from the substrate; A first electrode, located at a side of the touch control device layer away from the substrate, and the first electrode is used to emit electrons; an encapsulation layer, located on a side of the first electrode away from the substrate; The thickness of the touch control device layer is greater than the thickness of the first electrode, so that the first electrode is in a disconnected state at the position of the touch control device layer.
2. The embedded touch OLED display panel according to claim 1, characterized in that: The touch control device layer comprises: A touch metal layer, located on a side of the pixel defining layer away from the substrate; A negative photoresist layer, located on a side of the touch metal layer or the pixel defining layer away from the substrate; The thickness of the negative photoresist layer is greater than the thickness of the first electrode.
3. The embedded touch display panel according to claim 2, characterized in that: In the horizontal direction of the display panel, the touch metal layer is in a mesh structure, and the touch metal layer in the mesh structure is partially disconnected.
4. The embedded touch OLED display panel according to claim 2, characterized in that: The thickness of the touch metal layer is smaller than the thickness of the first electrode.
5. The embedded touch OLED display panel according to claim 4, characterized in that: The upper surface area of the touch metal layer is smaller than the lower surface area of the touch metal layer.
6. The embedded touch OLED display panel according to claim 5, characterized in that: The upper surface area of the negative photoresist layer is greater than the lower surface area of the negative photoresist layer.
7. The embedded touch OLED display panel according to claim 6, characterized in that: The minimum width of the touch metal layer is greater than the maximum width of the first electrode.
8. The embedded touch OLED display panel according to claim 7, characterized in that: The resistivity of the touch metal layer is smaller than the resistivity of the first electrode.
9. The embedded touch OLED display panel according to claim 1, characterized in that: The display panel further includes: A driving device layer, located on one side of the substrate; A second electrode is located at a side of the driving device layer away from the substrate; The pixel defining layer is located on a side of the second electrode away from the substrate, the pixel defining layer is provided with a plurality of pixel openings arranged at intervals, and the second electrode is exposed through the pixel openings; an organic light-emitting layer, located in the pixel opening and connected to the second electrode; The first electrode is also located on a side of the organic light-emitting layer and the touch-control device layer away from the substrate.
10. The embedded touch OLED display panel according to claim 9, characterized in that: The driving device layer includes: A contact metal connected to the second electrode; A ground signal line layer, arranged at the same layer as the contact metal; In the horizontal direction of the display panel, the contact metal and the ground signal line layer form a mesh structure together.
11. The in-cell touch OLED display panel according to any one of claims 1 to 10, characterized in that: The embedded touch OLED display panel also includes: A dielectric layer is located on a side of the driving device layer away from the substrate, and the dielectric layer is located between two second electrodes and connected to the second electrodes.
12. The embedded touch OLED display panel according to claim 11, characterized in that: The thickness of the dielectric layer is greater than the thickness of the second electrode.
13. The in-cell touch OLED display panel according to any one of claims 1 to 10, characterized in that: The embedded touch OLED display panel also includes: A dielectric layer is located on a side of the pixel defining layer away from the substrate, and the touch control device layer is located on a side of the dielectric layer away from the substrate.
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