Method for directional multi-line cutting of tellurium-zinc-cadmium material
By combining the use of inner circle cutting machines and multi-wire cutting machines, efficient and precise cutting of zinc tellurium cadmium material is achieved, solving the problems of inefficiency and crystalline deviation in the existing technology, and meeting the high-precision cutting needs.
Patent Information
- Application Number
- CN202411786623.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-06
- Publication Date
- 2025-01-07
AI Technical Summary
The existing zinc tellurium material cutting methods are inefficient and difficult to meet the requirements of high crystalline deviation, and traditional multi-line cutting methods are difficult to apply to zinc tellurium materials.
Combined with the use of inner circle cutting machines and multi-wire cutting machines, the target reference surface is obtained through the inner circle cutting process, and the crystal is fixed on the material plate assembly in the multi-wire cutting process, so that the target reference surface is aligned with the cutting reference. Perform precise cutting to meet the crystal direction deviation requirements.
It improves the cutting efficiency and accuracy of zinc tellurium cadmium materials, solves the problems of inefficiency and crystalline deviation, meets the cutting needs of high precision, and reduces production costs.
Smart Images
Figure CN119260959A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of crystal processing, and in particular to a method for directional multi-wire cutting of cadmium zinc telluride materials. Background Art
[0002] Cadmium zinc telluride materials are widely used as substrate materials for infrared HgCdTe epitaxy due to their high lattice constant matching with HgCdTe materials. This material is prone to non-uniform nucleation growth during crystal growth, resulting in a low probability of the entire crystal being a single crystal, a long growth cycle, and the shape of the crystal to be cut is mostly irregular block grains.
[0003] The existing CdZnTe material cutting method mainly relies on the inner circle cutting machine. Although this method is flexible, it can only cut one wafer at a time, resulting in long cutting time and low efficiency. In addition, although the multi-wire cutting method can cut multiple wafers at a time to improve efficiency, during the cutting process, due to the high requirements of CdZnTe materials on crystal orientation deviation, the deviation problem in the multi-wire cutting process has a greater impact on the cutting quality. The traditional multi-wire cutting method is mostly suitable for materials with low requirements for crystal orientation deviation (such as Si), and is difficult to apply to crystals with high requirements for crystal orientation deviation (such as CdZnTe). Summary of the invention
[0004] The purpose of the present application is to provide a method for directional multi-wire cutting of cadmium zinc telluride materials. By combining the use of an inner circle cutting machine and a multi-wire cutting machine, efficient and precise cutting of cadmium zinc telluride materials is achieved, effectively solving the problems of low cutting efficiency and crystal orientation deviation caused by equipment limitations in the prior art.
[0005] To achieve the above objectives, the present application provides a method for directional multi-wire cutting of cadmium zinc telluride materials, comprising:
[0006] S1, inner circle cutting process: using an inner circle cutting machine to cut the crystal, and obtaining a target reference surface on the crystal;
[0007] S2. Multi-wire cutting process: Use a multi-wire cutting machine to first cut the plate assembly, obtain a cutting reference plane on the plate assembly, fix the crystal on the plate assembly, align the target reference plane with the cutting reference plane, and then cut the crystal to obtain a wafer that meets the crystal orientation deviation.
[0008] In some embodiments, the S1, the inner circle cutting process, includes:
[0009] S11, rough cutting orientation:
[0010] Use an internal circle cutting machine to cut the crystal to obtain a cut piece;
[0011] Using an orienting instrument, the cutting piece is inspected to obtain an offset angle between a target reference plane and an actual cutting plane;
[0012] S12, fine cutting orientation:
[0013] According to the offset angle, the cutting position relative to the position of the crystal is adjusted by the inner circle cutting machine, and then the crystal is cut to obtain a target reference surface on the crystal.
[0014] In some embodiments, the S11, rough cutting orientation, further includes:
[0015] For a crystal block having multiple crystal grains, an inner circle cutter is used to split the crystal block into multiple crystals according to the distribution of the crystal grains.
[0016] In some embodiments, the S11, rough cutting orientation, further includes:
[0017] Compare the offset angle with the adjustment range of the inner circle cutting machine. If the offset angle is within the adjustment range, execute the next step. If the offset angle is beyond the adjustment range, adjust the placement angle of the crystal, use the inner circle cutting machine to cut the crystal, use the orientator to detect the cut piece, and repeat the above steps.
[0018] In some embodiments, the S12, fine cutting orientation, specifically includes:
[0019] Using a first bonding member to fix the crystal on a first support member, aligning the actual cutting surface with the positioning surface of the first support member, and fixing the first support member on a cutting head of the inner circle cutting machine;
[0020] According to the offset angle, the first direction inclination angle and the second direction inclination angle of the cutting head relative to the blade of the inner circle cutting machine are adjusted to adjust the relative position of the blade and the crystal, and then the crystal is cut to obtain a target reference surface on the crystal.
[0021] In some embodiments, the multi-wire cutting process in S2 includes:
[0022] S21, Section Positioning:
[0023] Using a multi-wire cutting machine, cutting the second support member on the sheet assembly to obtain a cutting reference surface on the second support member;
[0024] S22, crystal positioning:
[0025] Fixing the crystal on the plate assembly so that the target reference plane is aligned with the cutting reference plane;
[0026] S23, Wafer cutting:
[0027] The crystal is cut to obtain wafers satisfying the crystal orientation deviation.
[0028] In some embodiments, the step S21, section positioning, includes:
[0029] Fixing the second support member of the sheet assembly on the sheet assembly, and adjusting the position of the sheet relative to the multi-wire sawing machine so that the multi-wire sawing machine can only cut 2-3 pieces of the second support member;
[0030] The second support member is cut using the multi-wire cutting machine to obtain a cutting reference surface on the second support member.
[0031] In some embodiments, the S22, crystal positioning, comprises:
[0032] Use a clamp to align the target reference plane with the cutting reference plane and fix them tightly together, place a second bonding member between the crystal and the material plate of the material plate assembly, apply bonding glue so that the crystal and the material plate are bonded and fixed, and after the bonding glue is cured by standing, remove the clamp.
[0033] In some embodiments, a substrate structure with a dovetail groove is used in the S1, inner circle cutting process and the S2, multi-wire cutting process. The substrate structure in the S1, inner circle cutting process is arranged on the first support member, and the substrate structure in the S2, multi-wire cutting process is arranged on the material plate of the material plate assembly.
[0034] In some embodiments, in the S1, inner circle cutting process, a first support is used to fix the position of the crystal, and the first support is a metal ingot; in the S2, multi-wire cutting process, a second support is used to fix the position of the crystal, and the second support is a graphite block.
[0035] Compared with the above-mentioned background technology, the method for directional multi-wire cutting of cadmium zinc telluride material provided in the present application mainly includes: S1, inner circle cutting process: use an inner circle cutting machine to cut the crystal and obtain the target reference plane on the crystal; S2, multi-wire cutting process: use a multi-wire cutting machine to first cut the material plate assembly, obtain the cutting reference plane on the material plate assembly, fix the crystal on the material plate assembly, align the target reference plane with the cutting reference plane, and then cut the crystal to obtain a chip that meets the crystal orientation deviation.
[0036] This technical solution aims at the problems of low efficiency and crystal orientation deviation in the cutting process of CdZnTe materials, and proposes a directional multi-wire cutting method combining an inner circle cutting machine and a multi-wire cutting machine. First, through the inner circle cutting process (S1), the crystal is precisely cut by the inner circle cutting machine to obtain the target reference surface. This step is critical because it provides an accurate reference surface for the subsequent multi-wire cutting process (S2), ensuring the accuracy of the cutting and the accuracy of the crystal orientation.
[0037] In the multi-wire cutting process (S2), the plate assembly is first cut to obtain a cutting reference surface. This cutting reference surface corresponds to the target reference surface obtained by inner circle cutting, providing an accurate positioning basis for the fixation and subsequent cutting of the crystal. Next, the crystal is fixed on the plate assembly to ensure that the target reference surface is aligned with the cutting reference surface. This step is crucial because it ensures the stability of the crystal during the multi-wire cutting process and the consistency of the cutting surface. Finally, the crystal is cut to obtain a wafer that meets the crystal orientation deviation requirements.
[0038] Through this method of combining the use of an inner circle saw and a multi-wire saw, the technical solution not only improves the cutting efficiency, because the multi-wire saw can cut multiple wafers at one time, but also effectively controls the crystal deviation through precise reference plane alignment, solving the problems of low cutting efficiency and crystal deviation caused by equipment limitations in the prior art. The implementation of this method makes the cutting process of cadmium zinc telluride materials more efficient and precise, meets the needs of crystal cutting with high crystal deviation requirements, thereby improving the quality of the final product, reducing production costs, and enhancing market competitiveness. BRIEF DESCRIPTION OF THE DRAWINGS
[0039] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.
[0040] FIG1 is a schematic diagram of a method for directional multi-wire cutting of cadmium zinc telluride materials provided in an embodiment of the present application;
[0041] FIG2 is a schematic diagram of an inner circle cutting process provided in an embodiment of the present application;
[0042] FIG3 is a schematic diagram of a multi-wire cutting process provided in an embodiment of the present application;
[0043] FIG4 is a timing diagram of an inner circle cutting process and a multi-wire cutting process provided in an embodiment of the present application;
[0044] FIG5 is a schematic diagram of an inner circle cutting machine and a crystal provided in an embodiment of the present application;
[0045] FIG6 is a schematic diagram of the back side of the blade in FIG5 ;
[0046] FIG7 is a schematic diagram of a crystal provided in an embodiment of the present application;
[0047] 8 is a schematic diagram of a crystal, a first bonding member, a first supporting member, and a first dovetail groove substrate provided in an embodiment of the present application;
[0048] FIG9 is a schematic diagram of a multi-wire saw and a sheet assembly provided in an embodiment of the present application;
[0049] FIG10 is a schematic diagram of a multi-wire saw and a crystal provided in an embodiment of the present application;
[0050] FIG11 is a schematic diagram of a material plate and a second support member cut into 2-3 pieces provided in an embodiment of the present application;
[0051] FIG12 is a schematic diagram of the second support member and the cutting reference plane in FIG11;
[0052] FIG13 is a schematic diagram of the cutting reference plane and the crystal reference plane in FIG12 being aligned and fixed;
[0053] FIG14 is a schematic diagram of a crystal block provided in an embodiment of the present application;
[0054] FIG. 15 is a schematic diagram of a multi-wire sawing machine provided in another embodiment of the present application.
[0055] in:
[0056] Crystal 1, target reference surface 1001, cutting piece 2, crystal block 3,
[0057] Internal circle cutting machine 10,
[0058] The blade 101, the first bonding member 102, the first supporting member 103, the first dovetail groove substrate 104,
[0059] Multi-wire cutting machine 20,
[0060] Material plate assembly 201 , material plate 2011 , second support member 2012 , cutting reference surface 20121 , second dovetail groove substrate 2013 , and cutting line 202 . DETAILED DESCRIPTION
[0061] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0062] In order to enable those skilled in the art to better understand the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.
[0063] Please refer to FIG. 1 , which is a schematic diagram of a method for directional multi-wire cutting of cadmium zinc telluride material provided in an embodiment of the present application.
[0064] In a first specific implementation manner, the method for directional multi-wire cutting of cadmium zinc telluride material provided in the implementation manner of the present application mainly includes the following two steps, which are mainly performed by an inner circle cutting machine 10 and a multi-wire cutting machine 20 respectively.
[0065] The first step is S1, the inner circle cutting process, which mainly includes the following steps: using the inner circle cutting machine 10 to cut the crystal 1 to obtain the target reference surface 1001 on the crystal 1.
[0066] The second step is S2, the multi-wire cutting process, which mainly includes the following steps: using the multi-wire cutting machine 20, first cutting the material plate assembly 201, obtaining the cutting reference plane 20121 on the material plate assembly 201, fixing the crystal 1 on the material plate assembly 201, aligning the target reference plane 1001 with the cutting reference plane 20121, and then cutting the crystal 1 to obtain a chip 2 that meets the crystal orientation deviation.
[0067] This technical solution aims at the problems of low efficiency and crystal orientation deviation in the cutting process of CdZnTe materials, and proposes a directional multi-wire cutting method combining an inner circle cutting machine 10 and a multi-wire cutting machine 20. First, through the inner circle cutting process (S1), the inner circle cutting machine 10 is used to accurately cut the crystal 1 to obtain the target reference surface 1001. This step is critical because it provides an accurate reference surface for the subsequent multi-wire cutting process (S2), ensuring the accuracy of the cutting and the accuracy of the crystal orientation.
[0068] In the multi-wire cutting process (S2), the plate assembly 201 is first cut to obtain a cutting reference plane 20121. This cutting reference plane 20121 corresponds to the target reference plane 1001 obtained by inner circle cutting, providing a precise positioning basis for the fixation and subsequent cutting of the crystal 1. Next, the crystal 1 is fixed on the plate assembly 201 to ensure that the target reference plane 1001 is aligned with the cutting reference plane 20121. This step is crucial because it ensures the stability of the crystal 1 during the multi-wire cutting process and the consistency of the cutting surface. Finally, the crystal 1 is cut to obtain a wafer 2 that meets the crystal orientation deviation requirements.
[0069] By combining the inner circle saw 10 and the multi-wire saw 20, the technical solution not only improves the cutting efficiency, because the multi-wire saw 20 can cut multiple wafers at one time, but also effectively controls the crystal deviation through precise reference plane alignment, solving the problems of low cutting efficiency and crystal deviation caused by equipment limitations in the prior art. The implementation of this method makes the cutting process of cadmium zinc telluride materials more efficient and accurate, meets the needs of crystal cutting with high crystal deviation requirements, thereby improving the quality of the final product, reducing production costs, and enhancing market competitiveness.
[0070] Please refer to Figures 5 and 6. Figure 5 is a schematic diagram of the inner circle cutting machine and the crystal provided in an embodiment of the present application, and Figure 6 is a schematic diagram of the back side of the blade in Figure 5.
[0071] FIG5 shows the positional relationship between the blade 101 and the crystal 1 . The blade 101 is in rotational motion. There is a circular hole in the middle area of the blade 101 . The crystal 1 is cut by the inner edge of the circular hole of the rotating blade 101 .
[0072] Please refer to Figures 9 and 10. Figure 9 is a schematic diagram of a multi-wire saw and a plate assembly provided in an embodiment of the present application, and Figure 10 is a schematic diagram of a multi-wire saw and a crystal provided in an embodiment of the present application.
[0073] FIG9 shows the positional relationship between the sheet assembly 201 and the cutting wire 202. The cutting wire 202 is wound around two cylinders. The rotation of the cylinders drives the cutting wire 202 to move. The cutting wires 202 are arranged in parallel. The sheet assembly 201 and the crystal 1 are cut by the moving cutting wires 202. It should be noted that the cutting actions of the multiple cutting wires 202 are performed simultaneously, so the cutting efficiency is high.
[0074] It should be noted that, regarding the use of the multi-wire cutting machine 20, the material plate assembly 201 needs to be fed relative to the cutting line 202 of the multi-wire cutting machine 20. The present embodiment does not limit the feeding direction of the material plate assembly 201; for example, the feeding direction shown in Figures 9 and 10 is an upper feeding method. In addition, it can also be a lower feeding method. For the lower feeding method, please refer to Figure 15, which is a schematic diagram of a multi-wire cutting machine provided in another embodiment of the present application.
[0075] Please refer to FIG. 2 , which is a schematic diagram of the inner circle cutting process provided in an embodiment of the present application.
[0076] In some embodiments, regarding S1, the inner circle cutting process mainly includes the following two steps.
[0077] The first step is S11, rough cutting orientation, which mainly includes the steps of: using an inner circle cutting machine 10 to cut the crystal 1 to obtain a cutting piece 2; using an orientation instrument to detect the cutting piece 2 to obtain an offset angle between the target reference plane 1001 and the actual cutting surface.
[0078] The second step is S12, fine cutting orientation, which mainly includes the following steps: according to the offset angle, the cutting position relative to the position of the crystal 1 is adjusted by the inner circle cutting machine 10, and then the crystal 1 is cut to obtain the target reference surface 1001 on the crystal 1.
[0079] In this embodiment, the S1 inner circle cutting process is one of the key steps to achieve directional multi-wire cutting of cadmium zinc telluride materials. The process first involves S11 rough cutting orientation. In this step, the crystal 1 is preliminarily cut using an inner circle cutting machine 10 to form a cutting piece 2. The purpose of this process is to obtain a cutting piece 2 that can be tested, and to achieve the orientation of the crystal 1 by testing the cutting piece 2. Subsequently, the cutting piece 2 is tested using an orientation instrument to determine the offset angle between the target reference plane 1001 and the actual cutting plane. This offset angle is an important parameter for evaluating cutting accuracy, which directly affects the subsequent cutting adjustment and the quality of the final product.
[0080] Next is the S12 fine cutting orientation step. In this stage, the cutting position is precisely adjusted by the inner circle cutting machine 10 according to the offset angle obtained in the rough cutting orientation. The purpose of the adjustment is to make the relative position of the cutting position to the crystal 1 more accurate, so as to ensure that the new cutting surface obtained on the crystal 1 is as close to the target reference plane 1001 as possible. This adjustment process may require multiple iterations until the deviation between the cutting surface and the target reference plane 1001 is within an acceptable range. Finally, through the precisely adjusted cutting, the target reference plane 1001 obtained on the crystal 1 will serve as an accurate reference for the subsequent multi-wire cutting process, ensuring the accuracy of the entire cutting process and the control of crystal orientation deviation. Such an inner circle cutting process provides a solid foundation for achieving efficient and accurate directional multi-wire cutting of cadmium zinc telluride materials.
[0081] It should be noted that if the directional deviation of the process is close to the critical value, the subsequent introduction of errors caused by cutting may cause the target value to be exceeded; therefore, the deviation considered here is the overall deviation including the error caused by cutting, rather than the local deviation that excludes the cutting error, so that the problem of cutting error can be solved.
[0082] It should be noted that in S11, rough cutting and orientation, the crystal 1 may need to be simply fixed, which can be fixed by a clamp or by using a small amount of adhesive. If a small amount of glue is used for bonding, it is also necessary to remove the glue after cutting and disassembly.
[0083] Please continue to refer to Figures 5 and 6. Cutting blade 2 is the part cut from crystal 1 by blade 101. Cutting blade 2 in Figure 5 is the part of crystal 1 on the back of blade 101 in Figure 6 before it is completely cut from crystal 1. There are actual cutting surfaces produced by blade 101 on both crystal 1 and cutting blade 2. Crystal 1 and cutting blade 2 have the same physical properties, so using an orientation instrument to inspect cutting blade 2 is equivalent to inspecting crystal 1.
[0084] Please refer to FIG. 14 , which is a schematic diagram of a crystal block provided in an embodiment of the present application.
[0085] In some embodiments, regarding S11, rough cutting orientation, the following steps are also included, which mainly occur before cutting the crystal 1; for a crystal block 3 having multiple grains, an inner circle cutting machine 10 is used to split the crystal block 3 into multiple crystals 1 according to the distribution of the grains.
[0086] In this embodiment, the S11 rough cutting and orientation step further includes processing a crystal block 3 having multiple grains. In this case, the crystal block 3 is composed of multiple grains and needs to be accurately split into multiple individual crystals 1. This step is to ensure that each crystal 1 can be processed individually to obtain a more accurate cutting result. Using the inner circle cutting machine 10, the crystal block 3 is cut according to the distribution characteristics of the grains and split into multiple independent crystals 1. This splitting not only helps to improve the efficiency of subsequent cutting, but also ensures the cutting quality of each crystal 1, because they can be individually oriented and adjusted to meet specific cutting requirements.
[0087] In some embodiments, regarding S11, rough cutting orientation, the following steps are also included, which mainly occur after the cutting piece 2 is detected; compare the offset angle with the adjustment range of the inner circle cutting machine 10. If the offset angle is within the adjustment range, execute the next step. If the offset angle exceeds the adjustment range, adjust the placement angle of the crystal 1, use the inner circle cutting machine 10 to cut the crystal 1, use the orientator to detect the cutting piece 2, and repeat the above steps.
[0088] In this embodiment, the rough cutting orientation step S11 also includes an important quality control link, which is to compare the obtained offset angle with the adjustment range of the inner circle cutting machine 10. This comparison process is the key to ensuring cutting accuracy because it determines whether further adjustment of cutting parameters is required. If the offset angle is within the adjustment range of the inner circle cutting machine 10, it means that the deviation can be corrected by the adjustment function of the machine, and then the process can enter the next step, namely fine cutting orientation.
[0089] However, if the offset angle exceeds the adjustment range of the inner circle cutting machine 10, this indicates that the current cutting position and angle need to be readjusted to ensure that the cut surface of the crystal 1 can be as close to the target reference plane 1001 as possible. In this case, it is necessary to readjust the placement angle of the crystal 1, use the inner circle cutting machine 10 for cutting again, and use the orientation meter to detect the new cut piece 2 to measure the new offset angle. This process will be repeated until the offset angle is within an acceptable range, ensuring that each cut can achieve the expected accuracy and quality. This iterative method helps to achieve high-precision cutting, especially in the cutting of cadmium zinc telluride materials that have strict requirements on crystal orientation deviation, such meticulous adjustment is essential.
[0090] In some embodiments, regarding S12, fine cutting orientation, specifically includes the following steps:
[0091] The crystal 1 is fixed on the first support member 103 using the first bonding member 102 so that the actual cutting surface is aligned with the positioning surface of the first support member 103, and the first support member 103 is fixed on the cutting head of the inner circle cutting machine 10;
[0092] According to the offset angle, the first direction inclination angle and the second direction inclination angle of the cutting head relative to the blade 101 of the inner circle cutting machine 10 are adjusted to adjust the relative position of the blade 101 and the crystal 1, and then the crystal 1 is cut to obtain the target reference surface 1001 on the crystal 1.
[0093] In this embodiment, the S12 fine cutting orientation step describes in detail how to accurately adjust the position of the crystal 1 to obtain the target reference plane 1001. First, the crystal 1 is fixed to the first support 103 using the first bonding member 102 to ensure that the actual cutting surface is accurately aligned with the positioning surface of the first support 103. This step is crucial to ensure cutting accuracy because it directly affects the consistency between the cutting surface and the target reference plane 1001. Next, the first support 103 is fixed to the cutting head of the inner circle cutting machine 10, which can ensure the stability of the crystal 1 and the accuracy of the position during the cutting process.
[0094] Subsequently, the first and second direction inclination angles of the cutting head relative to the blade 101 of the inner circle cutter 10 are adjusted according to the offset angle measured previously. This adjustment process is to optimize the relative position of the blade 101 and the crystal 1 to compensate for any existing offset and ensure that the surface of the crystal 1 finally cut is as close to or coincides with the target reference plane 1001 as possible. By precisely adjusting the position of the blade 101, the crystal 1 can be finely cut, and finally a precise target reference plane 1001 can be obtained on the crystal 1, laying a solid foundation for the subsequent multi-wire cutting process. This fine adjustment and control is the key to achieving efficient and precise cutting, especially in applications with strict requirements on crystal orientation deviation, such meticulous orientation and adjustment steps are essential.
[0095] As an option, the first bonding member 102 is a graphite bonding member. In S1, the inner circle cutting process, the first support member 103 is used to fix the position of the crystal 1, and the first support member 103 is a metal ingot.
[0096] It should be noted that the cutting head of the internal circle cutting machine 10 is two independent parts from the blade 101. The cutting head has the ability of tilt adjustment and feeding. The first direction inclination adjustment and the second direction inclination adjustment referred to here refer to the inclination adjustment along the cutting direction and the inclination adjustment perpendicular to the cutting direction, respectively, corresponding to the arrows in Figure 5.
[0097] In some cases, in order to improve machining accuracy, the offset angle should be controlled within 30% of the maximum allowable deviation range.
[0098] Please refer to Figures 7 and 8. Figure 7 is a schematic diagram of the crystal provided in an embodiment of the present application, and Figure 8 is a schematic diagram of the crystal provided in an embodiment of the present application and the first bonding member, the first supporting member and the first dovetail groove substrate.
[0099] The structure in FIG8 includes a crystal 1, a first bonding member 102, a first support member 103, and a first dovetail groove substrate 104. After these structures are combined into one, they are fixed together on the cutting head of the inner circle cutting machine 10. The relative position with the blade 101 is adjusted by the action of the cutting head to achieve adjustment according to the offset angle, providing a basis for subsequent cutting by the blade 101. The crystal 1 is fixed to one side of the first support member 103 by the first bonding member 102, and the first dovetail groove substrate 104 is fixed to the other side of the first support member 103.
[0100] Please refer to FIG. 3 , which is a schematic diagram of a multi-wire cutting process provided in an embodiment of the present application.
[0101] In some embodiments, regarding S2, the multi-wire cutting process mainly includes the following three steps.
[0102] The first step is S21, cutting surface positioning, which mainly includes the steps of: using the multi-wire cutting machine 20 to cut the second support member 2012 on the material plate assembly 201, and obtaining a cutting reference surface 20121 on the second support member 2012.
[0103] The second step is S22, crystal positioning, which mainly includes the steps of: fixing the crystal 1 on the plate assembly 201 so that the target reference plane 1001 is aligned with the cutting reference plane 20121.
[0104] The third step is S23, wafer cutting, which mainly includes the steps of: cutting the crystal 1 to obtain a wafer 2 that satisfies the crystal orientation deviation.
[0105] In this embodiment, S2, the multi-wire cutting process is the second main stage in the directional multi-wire cutting method, which includes three key steps: S21 facet positioning, S22 crystal positioning and S23 wafer cutting. The purpose of S21 facet positioning is to provide a reference plane for the precise cutting of the crystal 1. In this step, the second support member 2012 on the material plate assembly 201 is cut using the multi-wire cutting machine 20, so as to obtain a cutting reference plane 20121 on the second support member 2012. This cutting reference plane 20121 will be used for subsequent crystal positioning to ensure the accuracy and consistency of the cutting process.
[0106] Next, in the crystal positioning step S22, the crystal 1 is fixed on the plate assembly 201 to ensure that its target reference plane 1001 is aligned with the previously obtained cutting reference plane 20121. This step is crucial because it directly affects whether the cut wafer 2 can meet the requirements of the crystal orientation deviation. By aligning the two reference planes, the position of the crystal 1 during the cutting process can be ensured to be accurate, thereby improving the quality of the cut wafer 2.
[0107] Finally, in the S23 wafer cutting step, the crystal 1 is precisely cut to obtain a wafer 2 that meets the specific crystal orientation deviation requirements. This step is the ultimate goal of the entire multi-wire cutting process, which relies on the precise execution of the first two steps. By precisely controlling the cutting process, it can be ensured that the obtained wafer 2 has the required crystal orientation characteristics and meets the needs of high-precision processing.
[0108] In some embodiments, regarding S21, section positioning, specifically includes the following steps:
[0109] Fix the second support member 2012 of the sheet assembly 201 on the sheet 2011 of the sheet assembly 201, and adjust the position of the sheet 2011 relative to the multi-wire saw 20, so that the multi-wire saw 20 can only cut 2-3 pieces of the second support member 2012;
[0110] The second support member 2012 is cut using a multi-wire saw 20 , and a cutting reference surface 20121 is obtained on the second support member 2012 .
[0111] In this embodiment, the cutting surface positioning step S21 further refines how to accurately create the cutting reference surface 20121 on the sheet assembly 201. First, the second support member 2012 is fixed to the sheet 2011 of the sheet assembly 201. This operation is to ensure the stability and position accuracy of the second support member 2012 during the cutting process. Subsequently, the position of the sheet 2011 relative to the multi-wire saw 20 is adjusted. This step is very critical because it determines the accuracy of the cutting and the final position of the cutting reference surface 20121 on the second support 2012. Through precise adjustment, the multi-wire saw 20 can only cut 2-3 pieces of the second support 2012, so that the cutting range can be controlled to ensure the accurate formation of the cutting reference surface 20121.
[0112] After completing the above positioning step, the second support member 2012 is actually cut using the multi-wire saw 20 to form a cutting reference plane 20121. The cutting reference plane 20121 is a reference plane for subsequent positioning and cutting of the crystal 1, and its accuracy directly affects the crystal orientation deviation and quality of the final wafer 2. In this way, the S21 cutting surface positioning step provides an accurate starting point for the entire multi-wire cutting process, ensuring that the subsequent steps can proceed smoothly, thereby achieving the purpose of efficient and accurate cutting of cadmium zinc telluride materials.
[0113] Please continue to refer to Figures 9 and 10, and to Figures 11 and 12. Figure 11 is a schematic diagram of the material plate provided in an embodiment of the present application and the second support member cut into 2-3 pieces, and Figure 12 is a schematic diagram of the second support member and the cutting reference plane in Figure 11.
[0114] A second support member 2012 is fixed on the material plate 2011 in Figure 11. Combined with Figure 9, it can be seen that the second support member 2012 has completed cutting, and the second support member 2012 in the figure has cut two pieces; the second support member 2012 in Figure 12 has removed the two cut pieces, and the remaining second support member 2012 reveals a cutting reference surface 20121 in the direction facing the cut two pieces.
[0115] In some embodiments, regarding S22, crystal positioning, specifically includes the following steps:
[0116] Use a clamp to align the target reference plane 1001 and the cutting reference plane 20121 and fix them tightly together. Place the second adhesive 102 between the crystal 1 and the material plate 2011 of the material plate assembly 201, apply adhesive so that the crystal 1 and the material plate assembly 201 are bonded and fixed. After the adhesive is cured by standing, remove the clamp.
[0117] In this embodiment, the crystal positioning step S22 details how to accurately fix the crystal 1 on the plate assembly 201 to ensure the accuracy of the cutting process. First, a fixture is used to align the target reference surface 1001 of the crystal 1 with the cutting reference surface 20121 on the plate assembly 201. This step is crucial because it ensures the correct position of the crystal 1 during the cutting process, which directly affects the crystal orientation deviation of the cut wafer 2.
[0118] After alignment, the crystal 1 is fixed tightly on the material plate assembly 201. In order to further ensure the stability of the crystal 1 during the cutting process, the second bonding member 102 is placed between the crystal 1 and the material plate 2011, and adhesive is applied. This bonding method not only provides additional fixing force, but also helps to absorb the impact and vibration that may be generated during the cutting process, preventing the crystal 1 from shifting.
[0119] After the adhesive is cured, the crystal 1 is firmly bonded to the plate assembly 201, and the previously used clamp can be removed. This curing process ensures the stability of the crystal 1 during the subsequent cutting process, and ensures that the cut wafer 2 can meet the strict crystal orientation deviation requirements. Through this precise crystal positioning and fixing method, the S22 crystal positioning step provides a solid foundation for achieving efficient and accurate directional multi-wire cutting of CdZnTe materials.
[0120] Please continue to refer to FIG. 12 and FIG. 13 . FIG. 13 is a schematic diagram of the alignment and fixation of the cutting reference plane and the crystal reference plane in FIG. 12 . The crystal reference plane here is the target reference plane 1001 of the crystal 1 .
[0121] The direction of the arrow in Figure 13 represents the force direction of the fixture. It should be noted that it is prohibited to apply glue between the two reference surfaces, and the glue needs to be of a type with a small change in solidified volume.
[0122] As an option, in S2, the multi-wire cutting process, the second support member 2012 is used to fix the position of the crystal 1, and the second support member 2012 is a graphite block. The second bonding member 102 is made of graphite.
[0123] Please refer to FIG. 4 , which is a timing diagram of the inner circle cutting process and the multi-wire cutting process provided in an embodiment of the present application.
[0124] In Figure 4, the inner circle cutting process and the multi-wire cutting process can be carried out simultaneously in the front part. For example, the inner circle cutting process starts from rough cutting positioning to fine cutting orientation, and the multi-wire cutting process starts from facet positioning. Then the fine cutting orientation of the inner circle cutting process enters the crystal positioning of the multi-wire cutting process, which is equivalent to performing crystal positioning after the facet positioning and fine cutting orientation are completed, and then performing chip cutting.
[0125] In some embodiments, a substrate structure with a dovetail groove is used in S1, the inner circle cutting process and S2, the multi-line cutting process. The substrate structure in S1, the inner circle cutting process is arranged on the first support member 103, and the substrate structure in S2, the multi-line cutting process is arranged on the material plate 2011 of the material plate assembly 201.
[0126] As shown in Fig. 8, the first dovetail groove substrate 104 is the part fixed to the crystal 1 in the S1, inner circle cutting process, and the first dovetail groove substrate 104 is connected to the cutting head of the inner circle cutting machine 10 to achieve the adjustment of the crystal 1 relative to the blade 101. As shown in Fig. 10, the second dovetail groove substrate 2013 is the part fixed to the crystal 1 in the S2, multi-wire cutting process, and the second dovetail groove substrate 2013 is connected to the lifting mechanism in the multi-wire cutting machine 20 to achieve the feeding of the crystal 1 relative to the cutting line 202.
[0127] It should be noted that the crystal 1 in this embodiment specifically refers to a crystal 1 made of cadmium zinc telluride material.
[0128] It should be noted that many of the components mentioned in this application are universal standard parts or components known to those skilled in the art, and their structures and principles can be learned by those skilled in the art through technical manuals or through conventional experimental methods.
[0129] It should be noted that, in this specification, relational terms such as first and second are merely used to distinguish one entity from other entities, but do not necessarily require or imply any actual relationship or order between these entities.
[0130] The above is a detailed introduction to the method for directional multi-wire cutting of cadmium zinc telluride materials provided by the present application. This article uses specific examples to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of the present application.
Claims
1. A method for directional multi-wire cutting of cadmium zinc telluride material, characterized in that: include: S1, inner circle cutting process: using an inner circle cutting machine to cut the crystal, and obtaining a target reference surface on the crystal; S2. Multi-wire cutting process: Use a multi-wire cutting machine to first cut the plate assembly, obtain a cutting reference plane on the plate assembly, fix the crystal on the plate assembly, align the target reference plane with the cutting reference plane, and then cut the crystal to obtain a wafer that meets the crystal orientation deviation.
2. The method for directional multi-wire cutting of cadmium zinc telluride material according to claim 1, characterized in that: The S1, the inner circle cutting process, comprises: S11, rough cutting orientation: Use an internal circle cutting machine to cut the crystal to obtain a cut piece; Using an orienting instrument, the cutting piece is inspected to obtain an offset angle between a target reference plane and an actual cutting plane; S12, fine cutting orientation: According to the offset angle, the cutting position relative to the position of the crystal is adjusted by the inner circle cutting machine, and then the crystal is cut to obtain a target reference surface on the crystal.
3. The method for directional multi-wire cutting of cadmium zinc telluride material according to claim 2, characterized in that: The S11, rough cutting orientation, further includes: For a crystal block having multiple crystal grains, an inner circle cutter is used to split the crystal block into multiple crystals according to the distribution of the crystal grains.
4. The method for directional multi-wire cutting of cadmium zinc telluride material according to claim 2, characterized in that: The S11, rough cutting orientation, further includes: Compare the offset angle with the adjustment range of the inner circle cutting machine. If the offset angle is within the adjustment range, execute the next step. If the offset angle is beyond the adjustment range, adjust the placement angle of the crystal, use the inner circle cutting machine to cut the crystal, use the orientator to detect the cut piece, and repeat the above steps.
5. The method for directional multi-wire cutting of cadmium zinc telluride material according to claim 2, characterized in that: The S12, fine cutting orientation, specifically includes: Using a first bonding member to fix the crystal on a first support member, aligning the actual cutting surface with the positioning surface of the first support member, and fixing the first support member on a cutting head of the inner circle cutting machine; According to the offset angle, the first direction inclination angle and the second direction inclination angle of the cutting head relative to the blade of the inner circle cutting machine are adjusted to adjust the relative position of the blade and the crystal, and then the crystal is cut to obtain a target reference surface on the crystal.
6. The method for directional multi-wire cutting of cadmium zinc telluride material according to claim 1, characterized in that: The S2, multi-wire cutting process, includes: S21, Section Positioning: Using a multi-wire cutting machine, cutting the second support member on the sheet assembly to obtain a cutting reference surface on the second support member; S22, crystal positioning: Fixing the crystal on the plate assembly so that the target reference plane is aligned with the cutting reference plane; S23, Wafer cutting: The crystal is cut to obtain wafers satisfying the crystal orientation deviation.
7. The method for directional multi-wire cutting of cadmium zinc telluride material according to claim 6, characterized in that: The S21, section positioning, comprises: Fixing the second support member of the sheet assembly on the sheet assembly, and adjusting the position of the sheet relative to the multi-wire sawing machine so that the multi-wire sawing machine can only cut 2-3 pieces of the second support member; The second support member is cut using the multi-wire cutting machine to obtain a cutting reference surface on the second support member.
8. The method for directional multi-wire cutting of cadmium zinc telluride material according to claim 6, characterized in that: The S22, crystal positioning, comprises: Use a clamp to align the target reference plane with the cutting reference plane and fix them tightly together, place a second bonding member between the crystal and the material plate of the material plate assembly, apply bonding glue so that the crystal and the material plate are bonded and fixed, and after the bonding glue is cured by standing, remove the clamp.
9. The method for directional multi-wire cutting of cadmium zinc telluride material according to any one of claims 1 to 8, characterized in that: A substrate structure with a dovetail groove is used in the S1, inner circle cutting process and the S2, multi-wire cutting process. The substrate structure in the S1, inner circle cutting process is arranged on the first support member, and the substrate structure in the S2, multi-wire cutting process is arranged on the material plate of the material plate assembly.
10. The method for directional multi-wire cutting of cadmium zinc telluride material according to any one of claims 1 to 8, characterized in that: In the S1, inner circle cutting process, a first support is used to fix the position of the crystal, and the first support is a metal ingot; in the S2, multi-wire cutting process, a second support is used to fix the position of the crystal, and the second support is a graphite block.