Silicon carbide target material, preparation method thereof and application of silicon carbide target material in photovoltaic field

Abstract

The invention belongs to the technical field of solar cells, and particularly discloses a silicon carbide target material and a preparation method and application thereof in the photovoltaic field. Silicon carbide, carbon powder and silicon powder are mixed, the carbon powder and the silicon powder can serve as active agents to effectively improve activity, then paraffin, a coupling agent and fullerene are mixed, and the silicon carbide target material is prepared. Lanthanum zirconate and polyvinylpyrrolidone are mixed and then blended, so that the material with excellent photoelectric property and high-temperature stability is obtained, the photoelectric conversion efficiency and stability can be greatly improved, and the development of a solar power generation technology is promoted.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a silicon carbide target material and a preparation method thereof and applications in the photovoltaic field. Background Art

[0002] With the growing demand for renewable energy, solar photovoltaic technology, as an important component, has become a hot topic in research on improving its conversion efficiency. Silicon carbide (SiC) has shown great application potential in the field of solar photovoltaics due to its excellent physical and chemical properties, such as high breakdown voltage, low on-resistance, and high thermal conductivity.

[0003] However, the preparation methods of traditional silicon carbide targets often have problems such as low photoelectric conversion efficiency and complicated preparation process. Therefore, it is particularly important to develop a silicon carbide target with excellent photoelectric conversion efficiency.

[0004] In view of this, this application is filed. Summary of the invention

[0005] The present invention provides a silicon carbide target material and a preparation method thereof and application in the photovoltaic field, which have excellent photoelectric properties.

[0006] The present invention solves the technical problem by adopting the following technical solutions: A method for preparing a silicon carbide target comprises the following steps: (1) Mix silicon carbide, carbon powder and silicon powder evenly to obtain a mixed powder; (2) Add paraffin wax and coupling agent to water, heat to 60-80°C, stir evenly, then add fullerene and disperse evenly to obtain a first mixed solution; (3) adding lanthanum zirconate and polyvinyl pyrrolidone into the nitric acid solution and stirring evenly to obtain a second mixed solution; (4) Mixing the first mixed liquid and the second mixed liquid evenly, adding the mixed powder, stirring evenly, ultrasonically treating, and drying to obtain a precursor; (5) The precursor is subjected to vacuum induction heating treatment to obtain a silicon carbide target.

[0007] The present invention creatively mixes silicon carbide, carbon powder and silicon powder, wherein the carbon powder and silicon powder can serve as activators to effectively improve the activity, and then mixes paraffin, a coupling agent and fullerene, and mixes lanthanum zirconate and polyvinyl pyrrolidone, and then blends them together to obtain a product with excellent photoelectric performance and high-temperature stability, which can greatly improve the photoelectric conversion efficiency and stability, thereby promoting the development of solar power generation technology.

[0008] Among them, the doping of fullerene and lanthanum zirconate effectively reduces scattering loss, effectively improves the absorption coefficient and electron mobility, so that it can effectively absorb light energy in a wider wavelength range and quickly transmit photogenerated carriers. At the same time, the fullerene and lanthanum zirconate have excellent stability, which can effectively improve the stability of the system, optimize the crystal structure of silicon carbide, reduce lattice distortion and dislocation, and improve the carrier transmission efficiency in the photoelectric conversion process, thereby effectively improving the photoelectric conversion efficiency and stability.

[0009] As a preferred embodiment of the present invention, the mass ratio of silicon carbide, carbon powder and silicon powder is 100:(2-5):(1-4).

[0010] As a preferred embodiment of the present invention, the coupling agent includes at least one of γ-methacryloxypropyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-aminopropyltriethoxysilane.

[0011] As a preferred embodiment of the present invention, the mass ratio of the paraffin wax, coupling agent, water and fullerene is (0.1-0.3):(0.01-0.05):(35-45):1.

[0012] As a preferred embodiment of the present invention, the mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1: (0.1-0.4): (35-45).

[0013] As a preferred embodiment of the present invention, the molar concentration of the nitric acid solution is 0.5~2 mol / L.

[0014] As a preferred embodiment of the present invention, the mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is (4-6): (4-6): 1.

[0015] As a preferred embodiment of the present invention, the power of the ultrasonic treatment is 500-800W, and the time of the ultrasonic treatment is 40-50min.

[0016] As a preferred embodiment of the present invention, the vacuum induction heating treatment temperature is 480-520°C, the treatment time is 1.5-3h, and the vacuum degree is 10 -3 ~10 -2 Pa.

[0017] The present invention also provides a silicon carbide target material, which is prepared by the above-mentioned preparation method.

[0018] The present invention also provides an application of a silicon carbide target in the photovoltaic field.

[0019] Beneficial effects of the present invention: The present invention mixes silicon carbide, carbon powder and silicon powder, wherein the carbon powder and silicon powder can be used as activators to effectively improve the activity, and then mixes paraffin, a coupling agent and fullerene, and mixes lanthanum zirconate and polyvinyl pyrrolidone, and then blends them to obtain a product with excellent photoelectric performance and high-temperature stability, which can greatly improve the photoelectric conversion efficiency and stability, thereby promoting the development of solar power generation technology. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be described clearly and completely below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] In the present invention, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0022] In the present invention, when it comes to numerical ranges, unless otherwise specified, the above numerical ranges are deemed to be continuous and include the minimum and maximum values ​​of the range, as well as each value between such minimum and maximum values. Further, when a range refers to an integer, each integer between the minimum and maximum values ​​of the range is included. In addition, when multiple ranges are provided to describe features or characteristics, the ranges can be merged. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges included therein.

[0023] In the present invention, there is no particular limitation on the specific dispersion and stirring treatment methods.

[0024] The reagents or instruments used in the present invention without indicating the manufacturer are all conventional products that can be obtained commercially. The raw materials used in the comparative examples and the raw materials used in the parallel experiments of the embodiments are the same commercially available products unless otherwise specified.

[0025] Example 1 A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:3:2 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.2:0.04:40:1.

[0026] (3) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.3:40.

[0027] (4) The first mixed liquid and the second mixed liquid were mixed evenly, and then the mixed powder was added, stirred evenly at a speed of 200 rpm, ultrasonically treated at 600 W for 45 min, and dried to obtain a precursor; The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is 5:5:1.

[0028] (5) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500° C., the treatment time is 2 h, and the vacuum degree is 10 -2 Pa.

[0029] Example 2 A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:2:4 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.2:0.04:40:1.

[0030] (3) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.3:40.

[0031] (4) The first mixed liquid and the second mixed liquid were mixed evenly, and then the mixed powder was added, stirred evenly at a speed of 200 rpm, ultrasonically treated at 600 W for 45 min, and dried to obtain a precursor; The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is 5:5:1.

[0032] (5) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500° C., the treatment time is 2 h, and the vacuum degree is 10 -2 Pa.

[0033] Example 3 A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:5:1 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.2:0.04:40:1.

[0034] (3) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.3:40.

[0035] (4) The first mixed liquid and the second mixed liquid were mixed evenly, and then the mixed powder was added, stirred evenly at a speed of 200 rpm, ultrasonically treated at 600 W for 45 min, and dried to obtain a precursor; The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is 5:5:1.

[0036] (5) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500° C., the treatment time is 2 h, and the vacuum degree is 10 -2 Pa.

[0037] Example 4 A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:3:2 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.1:0.05:35:1.

[0038] (3) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.3:40.

[0039] (4) The first mixed liquid and the second mixed liquid were mixed evenly, and then the mixed powder was added, stirred evenly at a speed of 200 rpm, ultrasonically treated at 600 W for 45 min, and dried to obtain a precursor; The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is 5:5:1.

[0040] (5) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500° C., the treatment time is 2 h, and the vacuum degree is 10 -2 Pa.

[0041] Example 5 A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:3:2 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.3:0.01:45:1.

[0042] (3) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.3:40.

[0043] (4) The first mixed liquid and the second mixed liquid were mixed evenly, and then the mixed powder was added, stirred evenly at a speed of 200 rpm, ultrasonically treated at 600 W for 45 min, and dried to obtain a precursor; The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is 5:5:1.

[0044] (5) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500° C., the treatment time is 2 h, and the vacuum degree is 10 -2 Pa.

[0045] Example 6 A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:3:2 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.2:0.04:40:1.

[0046] (3) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.1:35.

[0047] (4) The first mixed liquid and the second mixed liquid were mixed evenly, and then the mixed powder was added, stirred evenly at a speed of 200 rpm, ultrasonically treated at 600 W for 45 min, and dried to obtain a precursor; The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is 5:5:1.

[0048] (5) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500° C., the treatment time is 2 h, and the vacuum degree is 10 -2 Pa.

[0049] Example 7 A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:3:2 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.2:0.04:40:1.

[0050] (3) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.4:45.

[0051] (4) The first mixed liquid and the second mixed liquid were mixed evenly, and then the mixed powder was added, stirred evenly at a speed of 200 rpm, ultrasonically treated at 600 W for 45 min, and dried to obtain a precursor; The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is 5:5:1.

[0052] (5) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500° C., the treatment time is 2 h, and the vacuum degree is 10 -2 Pa.

[0053] Example 8 A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:3:2 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.2:0.04:40:1.

[0054] (3) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.3:40.

[0055] (4) The first mixed liquid and the second mixed liquid were mixed evenly, and then the mixed powder was added, stirred evenly at a speed of 200 rpm, ultrasonically treated at 600 W for 45 min, and dried to obtain a precursor; The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is 4:6:1.

[0056] (5) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500° C., the treatment time is 2 h, and the vacuum degree is 10 -2 Pa.

[0057] Example 9 A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:3:2 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.2:0.04:40:1.

[0058] (3) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.3:40.

[0059] (4) The first mixed liquid and the second mixed liquid were mixed evenly, and then the mixed powder was added, stirred evenly at a speed of 200 rpm, ultrasonically treated at 600 W for 45 min, and dried to obtain a precursor; The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is 6:4:1.

[0060] (5) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500° C., the treatment time is 2 h, and the vacuum degree is 10 -2 Pa.

[0061] Comparative Example 1 Comparative Example 1 is different from Example 1 in that the first mixed liquid is not added to Comparative Example 1, and the other aspects are the same.

[0062] A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:3:2 to obtain a mixed powder; (2) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.3:40.

[0063] (3) adding the mixed powder to the second mixed liquid, stirring at 200 rpm, ultrasonically treating at 600 W for 45 min, and drying to obtain a precursor; The mass ratio of the second mixed liquid to the mixed powder is 5:1.

[0064] (4) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500°C, the treatment time is 2 hours, and the vacuum degree is 10 -2 Pa.

[0065] Comparative Example 2 Comparative Example 2 is different from Example 1 in that the second mixed liquid is not added, and the other aspects are the same.

[0066] A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:3:2 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.2:0.04:40:1.

[0067] (3) adding the mixed powder to the first mixed liquid, stirring at 200 rpm, ultrasonically treating at 600 W for 45 min, and drying to obtain a precursor; The mass ratio of the first mixed liquid to the mixed powder is 5:1.

[0068] (4) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500°C, the treatment time is 2 hours, and the vacuum degree is 10 -2 Pa.

[0069] Comparative Example 3 The difference between Comparative Example 3 and Example 1 is that the mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is not within the scope of the present invention, and the others are the same.

[0070] A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:3:2 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.2:0.04:40:1.

[0071] (3) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.3:40.

[0072] (4) The first mixed liquid and the second mixed liquid were mixed evenly, and then the mixed powder was added, stirred evenly at a speed of 200 rpm, ultrasonically treated at 600 W for 45 min, and dried to obtain a precursor; The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is 2:8:1.

[0073] (5) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500° C., the treatment time is 2 h, and the vacuum degree is 10 -2 Pa.

[0074] Comparative Example 4 The difference between Comparative Example 4 and Example 1 is that the mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is not within the scope of the present invention, and the others are the same.

[0075] A method for preparing a silicon carbide target comprises the following steps: (1) Silicon carbide, carbon powder and silicon powder are mixed uniformly by ball milling in a mass ratio of 100:3:2 to obtain a mixed powder; (2) adding paraffin wax and γ-methacryloxypropyltrimethoxysilane to water, heating to 70° C., stirring at 200 rpm, and then adding fullerene and dispersing at 200 rpm to obtain a first mixed solution; The mass ratio of the paraffin wax, γ-methacryloxypropyltrimethoxysilane, water and fullerene is 0.2:0.04:40:1.

[0076] (3) adding lanthanum zirconate and polyvinyl pyrrolidone into a 1 mol / L nitric acid solution and stirring at 200 rpm to obtain a second mixed solution; The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1:0.3:40.

[0077] (4) The first mixed liquid and the second mixed liquid were mixed evenly, and then the mixed powder was added, stirred evenly at a speed of 200 rpm, ultrasonically treated at 600 W for 45 min, and dried to obtain a precursor; The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is 8:2:1.

[0078] (5) placing the precursor in a vacuum induction sintering furnace for vacuum induction heating treatment to obtain a silicon carbide target; the vacuum induction heating treatment temperature is 500° C., the treatment time is 2 h, and the vacuum degree is 10 -2 Pa.

[0079] Test Case The photoelectric output performance of solar cells with FTO glass / silicon carbide / Au structure was tested.

[0080] The silicon carbide is cadmium telluride prepared in Example and Comparative Example respectively. During the experiment, the 2 The photoelectric conversion efficiency was tested under the illumination of a solar simulator (Newport) AM1.5G.

[0081] Table 1

[0082] It can be seen from Table 1 that the method described in the present invention effectively improves the photoelectric conversion efficiency.

[0083] Finally, it should be noted that the above embodiments are intended to illustrate the technical solution of the present invention rather than to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention may be modified or replaced by equivalents without departing from the essence and scope of the technical solution of the present invention.

Claims

1. A method for preparing a silicon carbide target, characterized in that: The following steps are involved: (1) Mix silicon carbide, carbon powder and silicon powder evenly to obtain a mixed powder; (2) Add paraffin wax and coupling agent to water, heat to 60-80°C, stir evenly, then add fullerene and disperse evenly to obtain a first mixed solution; (3) adding lanthanum zirconate and polyvinyl pyrrolidone into the nitric acid solution and stirring evenly to obtain a second mixed solution; (4) Mixing the first mixed liquid and the second mixed liquid evenly, adding the mixed powder, stirring evenly, ultrasonically treating, and drying to obtain a precursor; (5) The precursor is subjected to vacuum induction heating treatment to obtain a silicon carbide target.

2. The method for preparing a silicon carbide target according to claim 1, characterized in that: The mass ratio of silicon carbide, carbon powder and silicon powder is 100:(2-5):(1-4).

3. The method for preparing a silicon carbide target according to claim 1, characterized in that: The coupling agent includes at least one of γ-methacryloxypropyltrimethoxysilane, γ-glycidyloxypropyltrimethoxysilane and γ-aminopropyltriethoxysilane.

4. The method for preparing a silicon carbide target according to claim 1, characterized in that: The mass ratio of the paraffin wax, coupling agent, water and fullerene is (0.1-0.3):(0.01-0.05):(35-45):

1.

5. The method for preparing a silicon carbide target according to claim 1, characterized in that: The mass ratio of the lanthanum zirconate, polyvinyl pyrrolidone and nitric acid solution is 1: (0.1-0.4): (35-45).

6. The method for preparing a silicon carbide target according to claim 1, characterized in that: The molar concentration of the nitric acid solution is 0.5-2 mol / L.

7. The method for preparing a silicon carbide target according to claim 1, characterized in that: The mass ratio of the first mixed liquid, the second mixed liquid and the mixed powder is (4-6): (4-6):

1.

8. The method for preparing a silicon carbide target according to claim 1, characterized in that: The power of the ultrasonic treatment is 500-800W, and the time of the ultrasonic treatment is 40-50min.

9. A silicon carbide target, characterized in that: The method is prepared by any one of claims 1 to 8.

10. Application of the silicon carbide target material according to claim 9 in the photovoltaic field.

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