Cavity structure for simplifying MOCVD (Metal Organic Chemical Vapor Deposition) reaction chamber maintenance project

Abstract

The invention provides a cavity structure for simplifying MOCVD (Metal Organic Chemical Vapor Deposition) reaction chamber maintenance project, the cavity structure comprises a reaction chamber upper cover, a plurality of ceilings, a graphite large disc base and a plurality of graphite small discs, the inner surface of the reaction chamber upper cover is provided with a mounting part, the plurality of ceilings are stacked and mounted on the mounting part, the graphite large disc base is provided with a storage part and a working position, and the working position is provided with a plurality of graphite small discs. One part of the small graphite discs are stacked in the storage part to serve as spare parts, and the other part of the small graphite discs are placed in the working position. When the cavity structure is used for production, the number of maintenance items and the maintenance frequency can be reduced, the cost and the time are saved, and the equipment utilization rate and the production efficiency are improved.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor manufacturing equipment, and in particular, relates to a chamber structure for simplifying maintenance items of an MOCVD reaction chamber. Background Art

[0002] Metal-organic Chemical Vapor Deposition (MOCVD) equipment is one of the main equipment for producing semiconductor epitaxial materials at present, and its application field is very wide. In the traditional planetary MOCVD reactor, a small graphite disk is placed in each circular concave area on the edge of the large graphite disk base to place the substrate for epitaxial growth. As the production progresses, a large amount of reaction residues will be deposited on the surface of the chamber (including small disks, ceiling and other components). When the thickness reaches a certain level, the surface deposits will fall off from the surface of the chamber and partially adsorb onto the surface of the mass-produced epitaxial wafer, thereby affecting the performance of the epitaxial wafer products. Therefore, these components need to be replaced and maintained regularly. After replacing the components with clean surfaces, MOCVD usually requires a series of routine maintenance items to restore the state of the reactor to ensure that production can continue. This series of maintenance items mainly include: (1) high temperature baking process A to remove the moisture adsorbed by the newly replaced components; (2) deposition of a certain thickness of aluminum-containing material process B to further remove residual impurities such as water and oxygen; (3) growth verification epitaxial structure process C to confirm the state of the chamber. This series of maintenance projects is time-consuming and costly, affecting growth efficiency.

[0003] Therefore, how to reduce the maintenance frequency and the number of maintenance items to reduce costs and improve production efficiency is an important issue that needs to be solved. Summary of the invention

[0004] The technical problem solved by the present application is: how to provide a cavity structure that can reduce the frequency and number of maintenance items of the MOCVD reaction chamber during the production process.

[0005] The present application provides a chamber structure for simplifying maintenance items of an MOCVD reaction chamber, the chamber structure comprising: A reaction chamber upper cover, wherein the inner surface of the reaction chamber upper cover is provided with a mounting portion; A plurality of ceilings, wherein the plurality of ceilings are stacked and installed on the installation portion; A graphite plate base, wherein the graphite plate base is provided with a storage portion and a working position; A plurality of small graphite discs, a part of which are stacked in the storage part, and another part of which are placed in the working position.

[0006] Optionally, the mounting portion is located at the center of the inner surface of the reaction chamber upper cover, and a mounting hole is opened at the center of the ceiling, and the mounting hole is sleeved on the mounting portion.

[0007] Optionally, the mounting portion is a cylinder, the mounting hole is a circular hole, and the mounting hole is threadedly connected to a side wall of the mounting portion.

[0008] Optionally, the inner surface edge of the reaction chamber upper cover is raised to form a surrounding portion, and the side surface of the ceiling abuts against the surrounding portion.

[0009] Optionally, the central area of ​​the large graphite disk base is concave to form the storage portion, and a plurality of edge areas around the central area are concave to form a plurality of working positions.

[0010] Optionally, the storage portion is a cylindrical groove.

[0011] Optionally, the chamber structure further comprises a small plate shed, which is mounted on the bottom end of the mounting portion. When the reaction chamber upper cover is combined with the large graphite plate base, the small plate shed cover is disposed on the storage portion.

[0012] Optionally, when the reaction chamber upper cover is combined with the large graphite disk base, the small disk shelf is embedded in the top of the storage portion.

[0013] Optionally, the cavity structure further includes: The reaction chamber lower frame, the graphite plate base is installed in the reaction chamber lower frame, the reaction chamber lower frame is located below the reaction chamber upper cover and is detachably covered with the reaction chamber upper cover.

[0014] The present application provides a chamber structure for simplifying the maintenance of MOCVD reaction chambers, which has the following technical effects: When this cavity structure is used for production, the number and frequency of maintenance items can be reduced, cost and time can be saved, and equipment utilization and production efficiency can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 FIG. 1 is a schematic diagram of a chamber structure for simplifying maintenance items of an MOCVD reactor chamber according to one or more embodiments. DETAILED DESCRIPTION

[0016] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0017] Before describing in detail each embodiment of the present application, the technical concept of the present application is first briefly described: At present, when performing routine maintenance on the MOCVD reactor, there are technical problems such as a large number of maintenance items resulting in high maintenance costs and long maintenance time. For this reason, the present application provides a cavity structure for simplifying the maintenance items of the MOCVD reactor, an installation portion is provided on the upper cover of the reactor for installing and storing the ceiling as a spare part, and a storage portion is provided on the base of the large graphite plate for storing a number of small graphite plates as spares. When the thickness of the surface deposits on the ceiling and the small graphite plate reaches a certain thickness, the ceiling and the small graphite plate are directly replaced with spare ones, and production can be carried out directly without the need to carry out the A, B, and C processes of the routine maintenance items. For the overall production process, maintenance time and cost are saved, and equipment utilization and production efficiency are improved. The specific principle of the cavity structure for simplifying the maintenance items of the MOCVD reactor of the present application is described below in combination with more embodiments.

[0018] Specifically, Figure 1 As shown, the chamber structure for simplifying the maintenance items of the MOCVD reaction chamber of the first embodiment includes a reaction chamber upper cover 10, a plurality of ceilings 20, a large graphite plate base 30, and a plurality of small graphite plates 40. The inner surface of the reaction chamber upper cover 10 is provided with a mounting portion 11, and a plurality of ceilings 20 are stacked on and mounted on the mounting portion 11, and the ceilings 20 located on the inner side are used as spare parts. The large graphite plate base 30 is provided with a storage portion 31 and a working position 32, a portion of the small graphite plates 40 are stacked on the storage portion 31 as spare parts, and another portion of the small graphite plates 40 are placed in the working position 32 for carrying substrates. Among them, the reverse side of the inner layer of the ceiling 20 contacts the inner surface of the reaction chamber upper cover 10, and the front side of the inner layer of the ceiling 20 contacts the reverse side of the outer layer of the ceiling 20, so as to ensure the surface cleanliness of the ceiling spare parts during the production process.

[0019] In one or more embodiments, the mounting portion 11 is located at the center of the inner surface of the reaction chamber upper cover 10, and a mounting hole 21 is provided at the center of the ceiling 20, and the mounting hole 21 is sleeved on the mounting portion 11. Exemplarily, the mounting portion 11 is a cylinder, and the mounting hole 21 is a circular hole, and the mounting hole 21 is threadedly connected to the side wall of the mounting portion 11. The ceiling 20 is mounted to the mounting portion 11 or removed from the mounting portion 11 by rotating the ceiling 20.

[0020] Furthermore, the inner surface edge of the reaction chamber upper cover 10 is raised to form a surrounding portion 12, and the side of the ceiling 20 abuts against the surrounding portion 12. The surrounding portion 12, the mounting portion 11 and the outermost ceiling 20 together form a closed groove, and the ceiling 20 as a spare part is in the closed groove to avoid contamination.

[0021] In one or more embodiments, the central area of ​​the upper surface of the large graphite disk base 30 is concave to form a storage portion 31, and several edge areas around the central area are concave to form several working positions 32, wherein the storage portion 31 stores at least two small graphite disks 40, and each working position 32 stores one small graphite disk 40. The shape and size of the storage portion 31 and the working position 32 match the small graphite disk 40, and the depth of the storage portion 31 can be several times the thickness of the small graphite disk 40. Exemplarily, the storage portion 31 is a cylindrical groove.

[0022] Further, the chamber structure also includes a small plate shed 50, which is installed at the bottom end of the mounting portion 11 and is located below the ceiling 20. When the reaction chamber cover 10 is combined with the large graphite plate base 30, the small plate shed 50 is covered on the storage portion 31. During the production process, the small plate shed 50 is covered on the storage portion 31 to prevent the spare small graphite plate 40 from being contaminated. When the spare small graphite plate 40 needs to be replaced, the small plate shed 50 is opened. Exemplarily, the small plate shed 50 is a cylinder, and the diameter of the small plate shed 50 is slightly smaller than the diameter of the storage portion 31. When the reaction chamber cover 10 is combined with the large graphite plate base 20, the small plate shed 50 is embedded in the top of the storage portion 31.

[0023] In one or more embodiments, the chamber structure further includes a reaction chamber lower frame 60, which is located below the reaction chamber upper cover 10 and detachably covers the reaction chamber upper cover 10, and the large graphite plate base 30 is installed in the reaction chamber lower frame 60. Before production, the reaction chamber upper cover 10 and the reaction chamber lower frame 60 need to be combined, and after production is completed or when the small graphite plate 40 and the ceiling 20 need to be replaced, the reaction chamber upper cover 10 and the reaction chamber lower frame 60 are separated.

[0024] In one or more embodiments, a maintenance method for a chamber structure for simplifying maintenance items of an MOCVD reaction chamber includes: (1) For the first maintenance, the ceiling spare parts are fixedly placed in the installation part 11, and the ceiling 20 is installed normally. The graphite small plate spare parts are placed in the storage part, and the graphite small plate 40 is placed in the working position 32 of the graphite large plate base 30. Then, according to the conventional process, maintenance items A (high temperature baking), B (deposition of a certain thickness of aluminum-containing material), and C (growth verification epitaxial structure) are performed.

[0025] (2) As the growth progresses, the surface of the ceiling or the surface of the graphite disk is maintained for the second time after the deposited material reaches the maintenance setting thickness.

[0026] Exchange the outer ceiling of the installation part 11 with the inner ceiling spare parts, or replace the small graphite disk at the working position with the small graphite disk in the storage part. Since the original ceiling spare parts and the small graphite disk spare parts have undergone multiple rounds of high-temperature baking processes in the reaction chamber, there is no need to perform maintenance processes A, B, and C, and growth can start directly.

[0027] (3) When the thickness of the deposited material on the surface of the ceiling spare parts and the graphite small plate reaches the maintenance requirement, the third maintenance is carried out, and all the ceilings and ceiling spare parts, graphite small plates and graphite small plate spare parts in the chamber are removed from the chamber.

[0028] Repeat the processes (1), (2), and (3). Since there are spare ceilings 20 and graphite discs 40 in the cavity structure, the ceilings 20 and graphite discs 40 with surface deposits can be directly replaced during the production process, so that production can continue, avoiding the need to perform maintenance processes A, B, and C each time the cleaned ceilings 20 and graphite discs 40 are directly introduced from the outside into the reaction chamber. For example, assuming that a certain production process requires the replacement of the ceiling 20 and graphite disc 40 three times, if the cleaned ceiling 20 and graphite disc 40 are introduced from the outside each time, the reaction chamber needs to perform maintenance processes A, B, and C. The improved solution of this embodiment can reserve three spare ceilings 20 and graphite discs 40 in the cavity structure in advance, and the spare parts can be directly used each time they are replaced, so there is no need to perform maintenance processes A, B, and C. Therefore, the entire production process saves three maintenance processes, reduces the maintenance frequency and the number of maintenance items, and saves maintenance time and cost. It should be noted that, after all the spare ceilings 20 and graphite discs 40 have been used up, all ceilings 20 and graphite discs 40 with surface deposits need to be removed from the reaction chamber. The cleaned ceilings 20 and graphite discs 40 introduced from the outside need to be maintained in the reaction chamber through the maintenance processes A, B, and C.

[0029] The specific implementation methods of the present application are described in detail above. Although some embodiments have been shown and described, those skilled in the art should understand that these embodiments can be modified and improved without departing from the principles and spirit of the present application whose scope is defined by the claims and their equivalents. These modifications and improvements should also be within the scope of protection of the present application.

Claims

1. A chamber structure for simplifying the maintenance items of an MOCVD reaction chamber, characterized in that: The cavity structure comprises: A reaction chamber upper cover, wherein the inner surface of the reaction chamber upper cover is provided with a mounting portion; A plurality of ceilings, wherein the plurality of ceilings are stacked and installed on the installation portion; A graphite plate base, wherein the graphite plate base is provided with a storage portion and a working position; A plurality of small graphite discs, a part of which are stacked in the storage part, and another part of which are placed in the working position.

2. The chamber structure for simplifying maintenance items of MOCVD reaction chamber according to claim 1, characterized in that: The mounting portion is located at the center of the inner surface of the reaction chamber upper cover, and a mounting hole is opened at the center of the ceiling, and the mounting hole is sleeved on the mounting portion.

3. The chamber structure for simplifying the maintenance items of the MOCVD reaction chamber according to claim 2, characterized in that: The mounting portion is a cylinder, the mounting hole is a circular hole, and the mounting hole is threadedly connected to the side wall of the mounting portion.

4. The chamber structure for simplifying maintenance items of MOCVD reaction chamber according to claim 2, characterized in that: The inner surface edge of the reaction chamber upper cover is raised to form a surrounding portion, and the side surface of the ceiling abuts against the surrounding portion.

5. The chamber structure for simplifying maintenance items of MOCVD reaction chamber according to claim 2, characterized in that: The central area of ​​the large graphite plate base is concave to form the storage portion, and a plurality of edge areas around the central area are concave to form a plurality of working positions.

6. The chamber structure for simplifying maintenance items of MOCVD reaction chamber according to claim 5, characterized in that: The storage portion is a cylindrical groove.

7. The chamber structure for simplifying maintenance items of a MOCVD reaction chamber according to any one of claims 1 to 6, characterized in that: The chamber structure also includes a small plate shed, which is installed at the bottom end of the installation portion. When the reaction chamber upper cover is combined with the large graphite plate base, the small plate shed cover is arranged on the storage portion.

8. The chamber structure for simplifying maintenance items of MOCVD reaction chamber according to claim 7, characterized in that: When the reaction chamber upper cover is combined with the large graphite plate base, the small plate shelf is embedded in the top of the storage part.

9. The chamber structure for simplifying maintenance items of MOCVD reaction chamber according to claim 1, characterized in that: The cavity structure also includes: The reaction chamber lower frame, the graphite plate base is installed in the reaction chamber lower frame, the reaction chamber lower frame is located below the reaction chamber upper cover and is detachably covered with the reaction chamber upper cover.

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