Mask and moving plate laminate and method for manufacturing same

Abstract

The invention relates to a laminated body of a mask and a moving plate and a manufacturing method thereof. A method for manufacturing a laminate of a mask and a moving plate, according to the present invention, for supporting a mask for OLED pixel formation and corresponding the mask to a frame, comprises the steps of: (a) adhering a first surface of a mask metal film to a moving plate; (b) manufacturing a mask by forming a mask pattern on a second surface of a mask metal film opposite to the first surface, the step (a) including the steps of: (a1) arranging a mask metal film on the moving plate; (a2) enabling the moving plate and the mask metal film to pass between a pair of rollers facing each other along a first direction on the mask metal film and press-fit the moving plate and the mask metal film; and (a3) passing the moving plate and the mask metal film between the pair of rollers along a second direction different from the first direction and pressing the moving plate and the mask metal film.

Description

Technical Field

[0001] The present invention relates to a stack of a mask and a moving plate and a manufacturing method thereof, and more particularly to a stack of a mask and a moving plate and a manufacturing method thereof, which can stably form a mask without deformation, and a high-resolution mask pattern is formed on the mask. Background Art

[0002] As a technology for forming pixels in an OLED (Organic Light Emitting Diode) manufacturing process, a fine metal mask (FMM) method is mainly used, in which a metal mask (Shadow Mask) in the form of a thin film is closely attached to a substrate and an organic substance is deposited at a desired position.

[0003] In the existing OLED manufacturing process, after the mask is manufactured into strips, plates, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. A mask can have multiple units corresponding to one display. In addition, in order to manufacture large-area OLEDs, multiple masks can be fixed to the OLED pixel deposition frame, and in the process of fixing them to the frame, each mask is stretched to make it flat. Adjusting the stretching force to make the entire part of the mask flat is a very difficult task. In particular, in order to make all the units flat and align the mask pattern with a size of only a few μm to tens of μm, it is necessary to fine-tune the stretching force applied to each side of the mask and confirm the alignment status in real time, which is a difficult task.

[0004] Nevertheless, in the process of fixing multiple masks to a frame, there is still the problem of poor alignment between masks and between mask units. In addition, in the process of welding the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem that the mask sags or twists due to the load; wrinkles and burrs generated in the welding part during the welding process lead to the problem of misalignment of the mask unit, etc.

[0005] In ultra-high-definition OLEDs, the existing QHD image quality is 500-600PPI (pixel per inch), and the pixel size reaches about 30-50μm, while 4KUHD and 8KUHD high-definition images have higher resolutions such as -860PPI and -1600PPI. Large OLEDs exceeding 10 inches in size used in automobiles are of high quality and have resolutions of 200 to 400PPI. In this way, considering the pixel size of ultra-high-definition OLEDs, the alignment error between units needs to be reduced to about a few μm. Exceeding this error will result in defective products, so the yield may be extremely low. Therefore, it is necessary to develop technologies that can prevent deformation such as sagging or twisting of the mask and make the alignment precise, as well as technologies for fixing the mask to the frame. Summary of the invention

[0006] Technical issues

[0007] Therefore, the present invention is proposed to solve the above-mentioned problems of the prior art, and aims to provide a stack of a mask and a moving plate and a manufacturing method thereof, which prevents the mask from sagging by providing tension when connecting the mask to a frame.

[0008] Another object of the present invention is to provide a stack of a mask and a movable plate that can support and move a mask stably without deformation, prevent deformation such as sagging or twisting of the mask, and can be accurately aligned, and a method for manufacturing the stack.

[0009] Another object of the present invention is to provide a stack of a mask and a moving plate, and a method for manufacturing the stack, which allows accurate control of the size of a mask pattern.

[0010] However, the above technical problems are for illustrative purposes, and the scope of the present invention is not limited thereto.

[0011] Technical Solution

[0012] The above-mentioned object of the present invention is achieved by a method for manufacturing a stack of a mask and a movable plate, wherein the stack of the mask and the movable plate supports a mask for forming OLED pixels and corresponds the mask to a frame, the method comprising the following steps: (a) bonding the first side of a mask metal film to a movable plate; (b) manufacturing a mask by forming a mask pattern on the opposite side of the first side, i.e., the second side of the mask metal film, wherein the step (a) comprises the following steps: (a1) arranging a mask metal film on the movable plate; (a2) passing the movable plate and the mask metal film between a pair of facing rollers along a first direction on the mask metal film and pressing them together; (a3) ​​passing the movable plate and the mask metal film between the pair of rollers along a second direction different from the first direction and pressing them together.

[0013] The mask metal film may have a quadrilateral shape.

[0014] The mask metal film can be arbitrarily divided into a first area and a second area. In the step (a2), based on the direction passing between the pair of rollers, the first area is located in front of the pair of rollers, and the second area is located in the back of the pair of rollers, and lamination is performed in the second area.

[0015] In the step (a3), based on the direction passing between the pair of rollers, the second region is located forward of the pair of rollers, the first region is located backward of the pair of rollers, and lamination is performed in the first region.

[0016] The first region and the second region correspond to regions divided in the mask metal film, respectively.

[0017] The method may further include the following steps: (a4) passing the movable plate and the mask metal film between the pair of rollers and pressing them together along a third direction different from the direction in which the mask metal film passes between the pair of rollers in step (a2) or step (a3).

[0018] The mask metal film can be arbitrarily divided into a third area and a fourth area. In the step (a4), based on the third direction, the third area is located in front of the double roller, and the fourth area is located in the back of the double roller, and lamination is performed in the fourth area.

[0019] The method may further include the following steps: (a5) the fourth region is located forward of the pair of rollers, the third region is located backward of the pair of rollers, and lamination is performed in the third region.

[0020] The third region and the fourth region respectively correspond to the regions divided in the mask metal film, and may be in different regions from the first region and the second region.

[0021] Between the step (a1) and the step (a2), the following steps may be further included: (a1-2) allowing the movable plate and the mask metal film to pass between a pair of rollers facing each other and press them with a smaller strength value than that in the step (a2) or the step (a3).

[0022] Before the step (a2), the method may further include the step of causing at least a portion of the second region of the mask metal film to rise from the movable plate.

[0023] Before the step (a3), the method may further include the step of causing at least a portion of the first region of the mask metal film to rise from the movable plate.

[0024] In the step (a), a dry film resist layer may be interposed and the movable plate and the mask metal film may be bonded.

[0025] The mask pattern is formed by wet etching. During the formation of the mask pattern, the dry film resist layer may provide adhesion to prevent warping between the first surface of the mask metal film and the dry film resist layer.

[0026] Before the step (a), the method may further include the step of forming a notch on the first surface of the mask metal film.

[0027] After the step (a), the mask metal film is bonded to the moving plate in a state where it is stretched in the long-side direction and the short-side direction compared to the pre-designed area.

[0028] The stretching amount may be 0.001% to 0.05% of the length of the long side of the mask metal film.

[0029] The stretching amount may be at least greater than 10 μm and less than 100 μm.

[0030] In addition, the above-mentioned object of the present invention is achieved by a stacked body of a mask and a moving plate, which is manufactured according to a manufacturing method of the stacked body of a mask and a moving plate.

[0031] In addition, the above-mentioned purpose of the present invention is achieved through a stack of a mask and a movable plate, which is used to support a mask for forming OLED pixels and correspond the mask to a frame, including: a movable plate, which is in the shape of a flat plate; a mask, which is bonded to the movable plate, including a first surface and a second surface facing the first surface, and forming a plurality of mask patterns extending from the first surface to the second surface, and the mask is bonded to the movable plate in a stretched state compared to a pre-designed area in the long side direction and the short side direction.

[0032] The mask may be in a state of being further stretched toward two sides or even four sides in the pre-designed area.

[0033] The stretching amount may be 0.001% to 0.05% of the length of the long side of the mask.

[0034] The stretching amount may be at least greater than 10 μm and less than 100 μm.

[0035] A dry film resist layer (DFR layer) is sandwiched between the movable plate and the mask to bond the movable plate and the mask metal film.

[0036] Technical Effects

[0037] According to the present invention constructed as described above, there is an effect of providing tension when the mask is connected to the frame to prevent the mask from sagging.

[0038] Furthermore, according to the present invention, the mask can be supported and moved stably without deformation, and deformation such as sagging or twisting of the mask can be prevented, and accurate alignment can be performed.

[0039] Furthermore, according to the present invention, the size of the mask pattern can be accurately controlled.

[0040] Furthermore, according to the present invention, it is possible to significantly reduce manufacturing cost and manufacturing time and significantly improve productivity.

[0041] Of course, the scope of the present invention is not limited to the above-mentioned effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 is a schematic diagram of the process of attaching an existing mask to a frame.

[0043] Figure 2 1 is a front view and a side cross-sectional view of a connection body of a mask and a frame according to an embodiment of the present invention.

[0044] Figure 3 1 is a schematic top view and a side cross-sectional view of a mask according to an embodiment of the present invention.

[0045] Figures 4 to 8 The diagram is a schematic diagram of the manufacturing process of the stacked body of the mask and the moving plate according to an embodiment of the present invention. In each step, the upper figure is a schematic side cross-sectional view, and the lower figure is a schematic top view.

[0046] Fig. 9 and Fig.10 It is a schematic diagram of a manufacturing process of a stack of a mask and a moving plate according to another embodiment of the present invention.

[0047] Fig.11 FIG. 4 is a schematic diagram of a method for bonding a mask metal film and a moving plate according to an embodiment of the present invention.

[0048] Fig.12 FIG. 1 is a schematic diagram of an initial design of a mask metal film and a total pitch after the process according to an embodiment of the present invention.

[0049] Figure 13 to Figure 14 FIG. 1 is a schematic diagram illustrating a bonding process of a mask metal film and a moving plate according to an embodiment of the present invention.

[0050] Figure 15 to Figure 16 FIG. 4 is a schematic diagram illustrating a bonding process of a mask metal film and a moving plate according to another embodiment of the present invention.

[0051] Fig.17 1 is a schematic diagram illustrating a state where a mask is connected to a frame according to a comparative example and an embodiment of the present invention.

[0052] Fig.18 It is a schematic side cross-sectional view of a mask pattern forming process according to a comparative example.

[0053] Fig.19 is based on Fig.18 A partially enlarged side cross-sectional view of a mask pattern of a mask according to a comparative example.

[0054] Figure 20 to Figure 21FIG. 1 is a schematic side cross-sectional view of a mask pattern forming process according to an embodiment of the present invention.

[0055] Fig. 22 FIG. 1 is a partially enlarged side cross-sectional view of a mask pattern of a mask according to an embodiment of the present invention.

[0056] Fig.23 FIG. 1 is a schematic diagram of a process of loading a stack of a mask and a moving plate onto a frame according to an embodiment of the present invention.

[0057] Fig.24 It is a schematic diagram of a state in which a moving plate is loaded onto a frame and a mask is matched to a unit area of ​​the frame according to an embodiment of the present invention.

[0058] Fig.25 This is a partially enlarged side cross-sectional view of a state in which a welding bead is formed in a notch portion according to an embodiment of the present invention.

[0059] Fig.26 It is a schematic diagram of a process of separating the mask from the moving plate after the mask according to an embodiment of the present invention is connected to a frame.

[0060] Fig. 27 FIG. 4 is a schematic diagram of a state where a mask is connected to a frame according to an embodiment of the present invention.

[0061] Fig.28 FIG. 1 is a schematic diagram of an OLED pixel deposition apparatus using a connector of a mask and a frame according to an embodiment of the present invention.

[0062] [Description of Reference Numerals]

[0063] 10: Connector of mask and frame 20: Lamination of mask and moving plate

[0064] 50: moving plate 55: dry film resist layer

[0065] 100: Mask 101: The first side of the mask

[0066] 102: Second surface of the mask 110: Mask film, mask metal film

[0067] 110-1, 110-2, 110-3, 110-4: Corners of the mask metal film

[0068] 200: frame 210: edge frame part

[0069] 220: Mask unit sheet portion 221: Edge sheet portion

[0070] 223: first grid sheet portion 225: second grid sheet portion

[0071] BR, TR: upper roller, lower roller C: unit, mask unit

[0072] CR: Mask cell region DM: Dummy portion, mask dummy portion

[0073] L: Laser LM1-LM5: Direction through the roller

[0074] M1, M2: first insulating part, second insulating part

[0075] P: mask pattern P1, P2: first mask pattern, second mask pattern

[0076] R1, R2, R3, R4: first area, second area, third area, fourth area

[0077] RC: Notch WB: Welding bead

[0078] WP: Welding Department DETAILED DESCRIPTION

[0079] The detailed description of the present invention described later will refer to the accompanying drawings, which illustrate specific embodiments that can implement the present invention as examples. These embodiments are described in full detail so that those skilled in the art can implement the present invention. Although the various embodiments of the present invention are different from each other, they are not mutually exclusive. For example, the specific shapes, structures and characteristics recorded herein are related to one embodiment and can be implemented as other embodiments without departing from the spirit and scope of the present invention. In addition, it should be understood that the position or configuration of individual constituent elements in each disclosed embodiment can be changed without departing from the spirit and scope of the present invention. Therefore, the detailed description described later should not be regarded as having a limiting meaning. As long as it is properly described, the scope of the present invention is limited only by the attached claims and all scopes equivalent thereto. Similar reference numerals in the figure represent the same or similar functions from many aspects, and for convenience, length, area, thickness and shape thereof can be exaggerated.

[0080] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

[0081] Figure 1 It is a schematic diagram of the existing process of attaching the mask 1 to the frame 2.

[0082] The existing mask 1 is a stick-type or a plate-type. Figure 1 The rod-type mask 10 can be used by welding both sides of the rod to the OLED pixel deposition frame. The body (Body) of the mask 1 [or the mask film 1a] has a plurality of display unit parts C. One unit part C can correspond to the display of a smartphone. A pixel pattern corresponding to each pixel of the display is formed on the unit part C.

[0083] Reference Figure 1 (a), the rod-shaped mask 1 is loaded onto the frame 2 of a quadrilateral frame shape in an unfolded state by applying a tensile force F1-F2 along the long axis direction of the rod-shaped mask 1. The cells C1-C6 of the rod-shaped mask 1 will be located in the blank area inside the frame 2.

[0084] Reference Figure 1 (b), after fine-tuning the tensile force F1-F2 applied to each side of the rod-shaped mask 1 and aligning it, the rod-shaped mask 1 and the frame 2 are connected to each other by welding W a part of the side surface of the rod-shaped mask 10. Figure 1 (c) illustrates a side section of the stick-shaped mask 10 and the frame connected to each other.

[0085] Despite the fine adjustment of the tensile forces F1-F2 applied to each side of the rod-shaped mask 10, the problem of poor alignment between the mask units C1-C6 still occurs. The distances between the patterns of the units C1-C6 are different from each other or the pixel patterns are not aligned. This is an example. Since the rod-shaped mask 1 includes multiple units C1-C6 and has a large area and a very thin thickness of tens of μm, it is easy to sag or twist due to the load. In addition, in order to make all the units C1-C6 in a flat state, it is a very difficult task to adjust the tensile forces F1-F2 while observing the alignment state between the units C1-C6 through a microscope. In order to prevent the pixel pattern (or mask pattern) with a size of several μm to tens of μm from having an adverse effect on the pixel process of the ultra-high-quality OLED, the alignment error is preferably not more than 3 μm. This alignment error between adjacent units is called pixel position accuracy (PPA).

[0086] In addition, multiple rod-shaped masks 1 are respectively connected to a frame 2, and confirming the alignment status between multiple rod-shaped masks 1 and multiple units C1-C6 of the rod-shaped masks 1 is also a very difficult task. The alignment operation will increase the process time and become a major reason for reducing production efficiency.

[0087] Furthermore, after the rod-shaped mask 1 is connected and fixed to the frame 2, the tensile force F1-F2 applied to the rod-shaped mask 1 can react as tension to the frame 2. This tension can slightly deform the frame 2 and distort the alignment state between the plurality of cells C1-C6.

[0088] Therefore, the present invention provides a mask and frame connector 10 that enables the mask 100 and the frame 200 to form an integrated structure. The mask 100 formed integrally with the frame 200 can prevent deformation such as sagging and twisting, and can be accurately aligned on the frame 200.

[0089] Figure 2 This is a front view of a mask and frame connector 10 according to an embodiment of the present invention. Figure 2 (a)] and side cross-sectional view [ Figure 2 (b)].

[0090] In this specification, the composition of the connector 10 of the mask and the frame will be briefly described, but the structure and manufacturing process of the connector 10 of the mask and the frame can be understood to include the entire content of Korean Patent Application No. 2018-0016186.

[0091] Reference Figure 2 The connector 10 of the mask and the frame may include a plurality of masks 100 and a frame 200. In other words, the plurality of masks 100 are connected to the frame 200 one by one. For the sake of convenience, the following description takes a quadrilateral mask 100 as an example, but the shape of the mask 100 is not limited as long as it can be connected to the frame 200.

[0092] A plurality of mask patterns P are formed on each mask 100 , and one unit portion C may be formed on one mask 100 . One mask unit portion C may correspond to a display of a smartphone, etc. Alternatively, a small number of about two unit portions C may be formed on the mask 100 .

[0093] The material of the mask 100 may also be invar, super invar, nickel (Ni), nickel-cobalt (Ni-Co), cobalt (Co), titanium (Ti), chromium (Cr), tungsten W, manganese (Mo), etc. The mask 100 may use a metal sheet generated by a rolling process or electroforming.

[0094] The frame 200 is formed to connect a plurality of masks 100. For thermal deformation considerations, the frame 200 is preferably made of the same material as the mask. The frame 200 may include an edge frame portion 210 that is substantially quadrilateral or quadrilateral frame-shaped. The interior of the edge frame portion 210 may be hollow.

[0095] In addition, the frame 200 has a plurality of mask unit regions CR, and may include a mask unit sheet portion 220 connected to the edge frame portion 210. The mask unit sheet portion 220 may be composed of an edge sheet portion 221 and a first grid sheet portion 223 and a second grid sheet portion 225. The edge sheet portion 221 and the first grid sheet portion 223 and the second grid sheet portion 225 refer to portions divided on the same sheet, and they are integrated with each other.

[0096] The thickness of the edge frame portion 210 is greater than that of the mask unit sheet portion 220 and is formed by a thickness of several mm to several em. The thickness of the mask unit sheet portion 220 may be less than the thickness of the edge frame portion 210 but greater than the thickness of the mask 100, and is about 0.1 mm to 1 mm. The width of the first grid sheet portion 223 and the second grid sheet portion 225 is about 1-5 mm.

[0097] In the planar sheet, excluding the region occupied by the edge sheet portion 221 and the first and second grid sheet portions 223 and 225 , a plurality of mask unit regions CR ( CR11 - CR56 ) may be provided.

[0098] The frame 200 has a plurality of mask unit regions CR [refer to Fig.24 ], each mask 100 can be attached in a manner that each mask unit portion C corresponds to the mask unit region CR. The mask unit portion C corresponds to the mask unit region CR of the frame 200, and part or all of the dummy portion can be attached to the frame 200 [mask unit sheet portion 220]. Thus, the mask 100 and the frame 200 can form an integrated structure.

[0099] Figure 3 1 is a schematic top view and a side cross-sectional view of a mask 100 according to an embodiment of the present invention.

[0100] Reference Figure 3 , the mask 100 may include a mask unit portion C formed with a plurality of mask patterns P and a dummy portion DM located around the mask unit portion C. The mask 100 may be made of a metal sheet produced by a rolling process, electroforming, etc., and one unit portion C or a plurality of unit portions C may be formed on the mask 100. The dummy portion DM corresponds to a portion of the mask film 110 [mask metal film 110] other than the unit portion C, and may include only the mask film 110, or may include a mask film 110 formed with a predetermined dummy portion pattern similar to the mask pattern P. The dummy portion DM corresponds to an edge of the mask 100, and a portion or all of the dummy portion DM may be attached to the frame 200 [mask unit sheet portion 220].

[0101] The width of the mask pattern P can be formed in a size less than 40 μm, and the thickness of the mask 100 can be formed in a size of about 5-20 μm. Since the frame 200 has a plurality of mask unit regions CR (CR11-CR56), it can also have a plurality of masks 100 having mask unit parts C (C11-C56) corresponding to each mask unit region CR (CR11-CR56).

[0102] The mask 100 may provide a first surface 101 and a second surface 102 which is the opposite surface of the first surface 101. The opening width of the mask pattern P [or the second mask pattern P2] opened toward the first surface 101 may be smaller than the opening width of the mask pattern P [or the first mask pattern P1] opened toward the second surface 102. When viewed from another angle, the shape of the mask pattern P may be a cone / inverted cone shape as a whole.

[0103] Figures 4 to 8 1 is a schematic diagram of a manufacturing process of a stacked body 20 of a mask 100 and a moving plate 50 according to an embodiment of the present invention. In each step, the upper figure is a schematic side cross-sectional view, and the lower figure is a schematic top view.

[0104] First, refer to Figure 4 (a) A mask metal film 110 may be provided, and the second surface 102 of the mask metal film 110 is bonded to the transfer substrate 40. The transfer substrate 40 is temporarily used in the manufacturing process of the mask 100, but is not used to support the mask 100 and load the mask 100 onto the frame 200, that is, it is not used as the moving plate 50. The transfer substrate 40 may be made of glass, quartz, etc., and may be in a flat plate shape with an area larger than the mask metal film 110, so as to perform a process for forming the notch portion RC of the mask metal film 110.

[0105] An adhesive portion 45 may be sandwiched between the transfer substrate 40 and the mask metal film 110. The adhesive portion 45 may be made of the same material as the dry film resist 55 described later. Alternatively, since the transfer substrate 40 will be separated from the mask metal film 110 in a subsequent process, the adhesive portion 45 may also be made of a material that can be removed and cleaned after temporarily providing adhesive force. Figure 4 The recessed portion RC formed in step (b) plays a bonding role so that the mask metal film 110 does not move on the transfer substrate 40 .

[0106] In addition, before forming the recessed portion RC / mask pattern P, other pattern forming processes such as etching may be used to form the first alignment hole AH1 and the second alignment hole AH2 on the mask metal film 110 .

[0107] The first alignment hole AH1 can be used to align the positions of the second mask pattern P2 and the first mask pattern P1 on the mask metal film 110, and can also be used to align the insulating parts M1 and M2, which are used to form the second mask pattern P2 and the first mask pattern P1. The second alignment hole AH2 can be used to align the mask metal film 110 and the moving plate 50 [refer to Figure 5 (d)] position.

[0108] The mask metal film 110 may include a region for forming the mask pattern P (P1, P2), namely, the mask unit portion C and dummy portions DM1, DM2 around the mask unit portion C. The first alignment hole AH1 and the second alignment hole AH2 may be formed in the dummy portions DM1, DM2 of the mask metal film 110, and the dummy portions DM1, DM2 are preferably formed in the second dummy portion DM2. The first dummy portion DM1, as a region for forming the notch portion RC and the welding portion WP, is included within the range of the mask 100, and the second dummy portion DM2 may be a portion that is cut or removed during or after the manufacturing process of the mask 100. That is, the second dummy portion DM2 may be a portion that corresponds only to the movable plate 50 [refer to Figure 5 (d)] area.

[0109] Then, refer to Figure 4 (b), a recess portion RC may be formed on the mask metal film 110 bonded to the transfer substrate 40. The recess portion RC may be formed on the first surface 101 of the mask metal film 110. The recess portion RC may be formed at a depth that does not penetrate the mask metal film 110 from the first surface 101 of the mask metal film 110.

[0110] First, a dry film resist layer 55 (DFR layer) can be formed on the first surface 101 of the mask metal film 110. The dry film resist layer 55 can be provided as a thin film photoresist. As an example, the lamination process can be performed immediately after baking at about 60°C for 60 seconds. The photoresist layer of DFR can be laminated to the first surface 101 of the mask metal film 110 while stripping off the protective film of DFR. Lamination can be performed in a low-temperature process of about 60°C or less with a preset roller pressure. Lamination is preferably performed in a vacuum state. Lamination in a vacuum state can prevent the occurrence of bubbles on the interface between the dry film resist layer 55 and the mask metal film 110 / movable plate 50.

[0111] The present invention utilizes the dry film resist layer 55 to perform bonding, lithography, etc. in a low temperature region below about 60°C, thereby having the effect of preventing the mask metal film 110 [or, mask 100] from being deformed due to heat during the process steps. In addition, due to the use of the dry film resist layer 55, the baking time and exposure processing time are significantly reduced compared to the use of liquid photoresist. Compared to liquid photoresist, it takes about 1 hour to bake and expose for outgassing, but only about 2 minutes if a dry film resist is used, thereby significantly reducing the process time.

[0112] After the dry film resist layer 55 is exposed and developed, the recess pattern 56 can be formed. Next, by wet etching, dry etching, etc., the space between the recess patterns 56, the recess portion RC can be formed.

[0113] The notch portion RC may be formed in a welding region WR for arranging the welding portion WP later. The welding region WR may correspond to the first dummy portion DM1 included in the mask 100 in the dummy portion other than the mask unit portion C. The welding region WR may correspond to an edge of the mask unit region CR of the frame 200.

[0114] Step difference WS [reference Fig.25 ] is a space for forming the notch RC, which is used to prevent the welding bead WB [or welding burr] from protruding upward and contacting the target substrate 1900 [reference Fig.25 and Fig.28 Due to the step WS of the notch RC, even if the weld bead WB protrudes upward, it can be prevented from protruding above the upper surface of the mask 100.

[0115] Then, refer to Figure 5 (c) A movable plate 50 may be provided. The movable plate 50 is a medium that can be transferred in a state where the mask 100 is attached thereto and supports the mask 100. The movable plate 50 is used in the manufacturing process of the mask 100, and can be used to attach the mask 100, support it, and transfer it to the frame 200, and is used to load the mask 100 onto the frame 200.

[0116] The movable plate 50 may be made of a material that is transparent to the laser L. The movable plate 50 may be made of glass, silica, quartz, alumina (Al2O3), borosilicate glass, zirconia, and the like.

[0117] The movable plate 50 is preferably made of a glass material that is easy to process and inexpensive, and more preferably a borosilicate glass material. In particular, borosilicate glass having excellent heat resistance, chemical resistance, mechanical strength, and transparency can be used. 33 materials. In addition, The thermal expansion coefficient of 33 is about 3.3, which has a small difference in thermal expansion coefficient with the mask metal film 110 made of Invar material, which is beneficial to control the mask metal film 110.

[0118] The transfer substrate 40 can be separated (debonded) from the mask metal film 110. The separation between the mask metal film 110 and the transfer substrate 40 can be performed by heating ET, chemically treating CM, applying ultrasonic waves US, and applying ultraviolet rays UV to the bonding portion 45. If at least one of heating ET, chemically treating CM, applying ultrasonic waves US, and applying ultraviolet rays UV is performed on the bonding portion 45, the bonding force between the mask metal film 110 and the transfer substrate 40 becomes weak, so that the mask metal film 110 and the transfer substrate 40 can be separated. The bonding portion 45 remaining in the mask metal film 110 after the transfer substrate 40 is separated can be removed by washing.

[0119] Next, the mask metal films 110 may be aligned with each other on the moving plate 50 .

[0120] Then, refer to Figure 5 (d), the first surface 101 of the mask metal film 110 can be bonded to the moving plate 50. Figure 5 The dry film resist layer 550 used to form the recessed portion RC in step (c) provides adhesive force while maintaining the original state. Therefore, it has the effect of directly bonding the first surface 101 of the mask metal film 110 to the movable plate 50 without using other bonding components. The movable plate 50 and the mask metal film 110 can be bonded to each other by sandwiching the dry film resist layer 55.

[0121] Optionally, in order to strengthen the adhesion between the moving plate 50 and the mask metal film 110 , a dry film resist layer 55 may be further formed.

[0122] According to Korean Patent Application No. 2020-0043485 Fig.11 The prior art uses liquid wax to bond the mask metal film to the substrate supporting the mask metal film. The liquid wax layer is baked at a temperature of about 100 to 160°C in order to vaporize the solvent during use, and the lamination process is also carried out at a temperature of about 110°C. Therefore, in the high temperature region above 100°C, the mask metal film may have the problem of thermal deformation. In addition, in order to form the etching pattern, liquid wax also uses liquid photoresist. That is, in the prior art, a liquid wax layer and a liquid photoresist layer are used between the mask metal film and the substrate supporting the mask metal film.

[0123] On the contrary, the present invention can have the following characteristics by using the dry film resist layer 55: Figure 4 The bonding process can be performed in a low temperature region below about 60°C as described in (a). In addition, there is no need to use a liquid wax layer and a liquid photoresist layer separately, and only the dry film resist layer 55 can achieve two purposes, namely bonding and forming an etching pattern. Figure 4As shown in (a), a notch pattern 56 can be formed. Figure 5 As described in (d), the mask metal film 110 and the moving plate 50 can be bonded. Figure 7 As will be described later in (g), the dry film resist layer 55 can even provide etching resistance and adhesion to the mask metal film 110 during the process of forming the second mask pattern P2.

[0124] In addition, Figure 5 In step (c), the transfer substrate 40 can also be moved onto the movable plate 50 without being separated from the mask metal film 110. The first surface 101 of the mask metal film 110 can be turned over to face the movable plate 50. The first surface 101 of the mask metal film 110 formed with the notch RC can be set to face the upper surface of the movable plate 50. Then, after the first surface 101 of the mask metal film 110 is adhered to the movable plate 50, the transfer substrate 40 can be separated from the mask metal film 110 as described above.

[0125] Then, refer to Figure 6 (e), a planarization process PS can be performed on the second surface 102 of the mask metal film 110. The planarization PS refers to the process of reducing the thickness by mirroring the second surface 102 (upper surface) of the mask metal film 110 while removing a portion of the upper portion of the mask metal film 110. The planarization PS can be performed using a CMP (Chemical Mechanical Polishing) method, and any known CMP method can be used. In addition, the thickness of the mask metal film 110 can also be reduced by a chemical wet etching method or a dry etching method. In addition, any planarization process that can reduce the thickness of the mask metal film 110 can be used.

[0126] The mask metal film 110 manufactured by the rolling process can be thinned by the planarization process PS. In addition, in order to control the surface characteristics and thickness, the mask metal film 110 manufactured by the electroforming process can also be subjected to the planarization process PS. By thinning the thickness of the mask metal film 110, the thickness of the mask metal film 110 can be about 5 μm to 20 μm.

[0127] The thickness reduction may be performed on the area for forming the first mask pattern P1 and the second mask pattern P2 in the mask unit part C. On the contrary, for the area where the notch portion RC is formed, it is necessary to ensure the thickness of the mask metal film 110 so that sufficient weld beads WB can be formed during the subsequent welding. Therefore, for the dummy part DM, especially the area where the notch portion RC is formed, i.e., the first dummy part DM1, it is preferred not to perform the thickness reduction. The thickness of the portion that is not subjected to the thickness reduction is greater than the thickness of the remaining portion and can be provided as the area for laser welding, i.e., the welding part WP.

[0128] The mask metal film 110 is bonded to the moving plate 50 with the dry film resist layer 55 interposed therebetween, so that the mask metal film 110 can also maintain a constant position during the planarization process PS.

[0129] Then, refer to Figure 6 (f), a first mask pattern P1 may be formed on the second surface 102 of the mask metal film 110 .

[0130] The first mask pattern P1 can be formed by forming a patterned first insulating portion M1 on the second surface 102 of the mask metal film 110 and etching in the space between the patterns of the first insulating portion M1. The first mask pattern P1 can be formed in the mask unit portion C region of the mask metal film 110. The first insulating portion M1 can be formed of a photoresist material using a printing method, etc., and etching can use, but is not limited to, dry etching and wet etching.

[0131] As an example, when wet etching is used, undercut occurs due to isotropic etching, and therefore, the width PA′ of the first mask pattern P1 may become larger than the inter-pattern width PA of the first insulating portion M1. In view of this, it is preferred to set the inter-pattern width of the first insulating portion M1. In addition, due to isotropic etching, the lower surface width of the first mask pattern P1 is not easy to control, and therefore, preferably, the first mask pattern P1 is formed so that its thickness is less than the thickness of the mask metal film 110. That is, preferably, the first mask pattern P1 is formed without penetrating the mask metal film 110. According to one embodiment, the thickness of the mask metal film 110 is about 20 μm, and the first mask pattern P1 can be formed with a thickness of about 15 to 18 μm. The width PA′ of the first mask pattern P1 may be about 30 to 40 μm, but is not limited thereto.

[0132] In addition, the first mask pattern P1 may penetrate the mask metal film 110 . However, in this case, the penetrated portion can be readjusted to the form of the second mask pattern P2 in the process of forming the second mask pattern P2 described later.

[0133] Then, refer to Figure 7(g) A second mask pattern P2 may be formed on the second surface 102 of the mask metal film 110. The second mask pattern P2 may be formed to penetrate from the first mask pattern P1 to the first surface 101 of the mask metal film 110.

[0134] The second mask pattern P2 can be formed by forming a patterned second insulating portion M2 on the second surface 102 of the mask metal film 110 and the first mask pattern P1, and etching in the pattern space of the second insulating portion M2. The second mask pattern P2 can be formed in the mask unit portion C region of the mask metal film 110. The second insulating portion M2 can be formed of a photoresist material using a printing method, etc., and etching can use, but is not limited to, dry etching and wet etching methods.

[0135] As an example, when wet etching is used, undercut occurs due to isotropic etching, so the width PB′ of the second mask pattern P2 may become larger than the width PB between patterns of the second insulating portion M2. Therefore, preferably, the second mask pattern P2 is formed with a very thin thickness compared to the thickness of the mask metal film 110. Only by forming the second mask pattern P2 with a very thin thickness can the error between the width PB between patterns of the isotropically etched second insulating portion M2 and the width PB′ of the second mask pattern P2 be minimized. According to one embodiment, the thickness of the mask metal film 110 is about 20 μm, then the first mask pattern P1 can be formed with a thickness of about 15 to 18 μm, and the second mask pattern P2 is formed with a thickness of about less than 5 μm, preferably, with a thickness of about less than 2 μm. The width PB′ of the second mask pattern P2 may be about 10 to 25 μm.

[0136] By forming the second mask pattern P2 , the mask metal film 110 may be penetrated, and the mask pattern P may be formed by the sum of the first mask pattern P1 and the second mask pattern P2 . By forming a plurality of mask patterns P, the mask metal film 110 may be provided as the mask 100 .

[0137] Then, refer to Figure 8 (h), after removing the second insulating portion M2, subsequent processes such as cleaning may be performed. Then, the mask 100 may sandwich a dry film resist layer 55 on the movable plate 50, and the manufacture of the laminated body 20 (20-1) of the mask and the movable plate for bonding support is completed.

[0138] The second mask pattern P2 of the mask 100 in the stacked body 20 of the mask and the moving plate has a smaller thickness and width than the first mask pattern P1. Therefore, the shape of the mask pattern P as a whole may be a cone / inverted cone shape like the first mask pattern P1. However, the organic source 1600 [refer to Fig.28] The pixel 1700 of the OLED is substantially formed based on the width PB′ of the second mask pattern P2, so that the size of the pixel can be determined according to the width PB′ of the second mask pattern P2.

[0139] In the present invention, the formation of the first mask pattern P1 and the second mask pattern P2 can be performed on the same second surface 102 of the mask metal film 110. The mask metal film 110 can continuously form the first mask pattern P1 and the second mask pattern P2 on the same second surface 102 without being transferred to other substrates in a state of being bonded to the movable plate 50. Therefore, the position of the mask metal film 110 remains fixed, which is conducive to reducing the error in the formation position of the first mask pattern P1 and the second mask pattern P2. In addition, the present invention forms the first mask pattern P1 and the second mask pattern P2 in a state where the mask metal film 110 is bonded to the movable plate 50, so that the mask pattern P can be finally formed. While the mask pattern P is formed, the mask 100 is in a state of being supported on the movable plate 50, so that the movable plate 50 can be directly loaded onto the frame 200. It is further conducive to directly using the movable plate 50 in the process of attaching the mask 100 to the frame 200.

[0140] Fig. 9 and Fig.10 It is a schematic diagram of the manufacturing process of a stacked body 20 of a mask and a movable plate: 20-2 according to another embodiment of the present invention.

[0141] According to Korean Patent Application No. 2019-0146163 Figure 5 and Figure 6 In the prior art, the mask is manufactured in a state where the template is inserted into the template support portion. After the mask is manufactured, the template is separated from the template support portion so that the mask is made to have the same size as the template. However, when the template is inserted into the template support portion, if the gap is inaccurate or the height step difference is inaccurate, there is a problem that an additional alignment process is required. In addition, due to inaccurate gaps and height step differences, the mask cannot be evenly attached to the template and the template support portion, resulting in a problem of poor formation position of the mask pattern.

[0142] Therefore, the present invention does not use a template support and a template separately, but only uses the moving plate 50, adheres the entire surface of the mask metal film 110 to the moving plate 50, and forms the mask pattern P, thereby being able to solve the above-mentioned problem.

[0143] In the above Figure 8During the manufacturing process of the stacked body 20 (20-1) of the mask 100 and the movable plate 50, the movable plate 50 is prepared as a mask unit region CR having an area larger than that of the frame 200. Manufacturing the mask 100 on the movable plate 50 is advantageous in simplifying the process. However, if the movable plate 50 is too large, interference may occur between adjacent movable plates 50 or between components of other frames 200 during the process of aligning the mask 100 to the mask unit region CR of the frame 200.

[0144] Reference Fig. 9 , the movable plate 50 can be cut SC in the stacked body 20 (20-1) of the mask 100 and the movable plate 50. By cutting SC, the size of the unit portion C and the dummy portion DM [first dummy portion DM1] of the mask 100 can be obtained. When the movable plate 50 is cut SC, the mask 100 and the dry film resist layer 55 can also be cut SC together.

[0145] The moving plate 50 is made of a material such as borosilicate glass, and can be easily cut SC by using a known scribing method.

[0146] Reference Fig. 9 Referring to the lower figure of FIG. 1 , after SC cutting, a stacked body 20 (20-2) of the mask 100 and the movable plate 50 can be provided, and the size of the mask 100 corresponds to the size of the mask unit region CR. The mask 100 and the movable plate 50 may have the same size and shape. Alternatively, the movable plate 50 and the mask 100 may be cut by the SC process separately, and the size of the movable plate 50 may be larger than the size of the mask 100. However, in order to prevent interference between the above-mentioned movable plates 50, one side needs to have a size larger than the mask 100 by a few mm or less.

[0147] Reference Fig.10 In the upper figure, the moving plate 50' can be prepared as a plurality of mask unit regions CR having an area larger than the frame 200. In this case, by bonding a plurality of mask metal films 110 at intervals on the large-area moving plate 50', the above Figure 5 (d) to Figure 8 (h) process.

[0148] In the stacked body of the plurality of masks 100 and the large-area moving plate 50', the moving plate 50' can be SC cut. When the SC moving plate 50 is cut, the SC masks 100 and the dry film resist layer 55 can also be cut.

[0149] Reference Fig.10, after cutting SC, the dummy portion movable plate 52′ between the mask 100 is discarded, and the stack 20 (20-2) of the mask 100 and the movable plate 50 can be made of multiple parts, and the size of the mask 100 corresponds to the mask unit area CR.

[0150] According to Korean Patent Application No. 2018-0016186, in the prior art, a through hole for the laser to pass through is processed on a template made of quartz material. The through hole has a smaller diameter for the laser to pass through, so the problem of template breakage may occur during the processing of the through hole. In addition, the holes punched in the quartz material are smaller than a few mm, so the processing difficulty is high and there is a problem of requiring more processing time and processing costs. On the contrary, the movable plate 50 in the present invention uses a material such as borosilicate glass, which allows the laser to pass through without the need to form a through hole separately, and has the effect of significantly reducing processing time and cost. In addition, the movable plate 50 is cut SC by a simple scribing method, which is helpful in solving the breakage problem. In addition, the movable plate 50 is inexpensive, so even if the remaining part is removed by cutting SC, it is also beneficial to save costs compared to the existing process.

[0151] In the following, according to the embodiment of the present invention, Figure 5 The bonding process of the mask metal film 110 and the moving plate 50 described in (d) will be described in detail.

[0152] Fig.11 FIG. 4 is a schematic diagram of a method for bonding a mask metal film and a moving plate according to an embodiment of the present invention.

[0153] Reference Fig.11 After the mask metal film 110 is arranged on the movable plate 50, it can pass between the upper roller TR and the lower roller BR. A dry film resist layer 55 can be sandwiched between the movable plate 50 and the mask metal film 110. The mask metal film 110 can be pressed and closely attached to the movable plate 50 based on the rollers TR and BR while passing between a pair of rollers TR and BR. As an example, the photoresist baking can be performed at a temperature of about 60°C for 5 minutes. Fig.11 (a) When the lamination process is carried out in a vertical direction, the lamination process can be carried out at a temperature of about 50°C, a roller pressure of 0.2 and a speed of 1.6. Fig.11 (b), when it is put into the horizontal direction, the lamination process can be carried out at a temperature of about 50°C, with a roller pressure of 0.2 and a speed of 0.7. By laminating in a vacuum state, it is possible to prevent bubbles from being trapped at the interface of the dry film resist layer 55 and the mask metal film 110 / movable plate 50.

[0154] Fig.12 It is a schematic diagram of the initial design of the mask metal film and the total spacing after the process according to an embodiment of the present invention.

[0155] Reference Fig.12 The portion of the mask metal film 110 used to form the mask pattern P, i.e., the mask unit portion C, is indicated by a dotted line. The stretched state can be measured based on the position other than the dummy portion DM used to form the mask pattern P. The distance between the mask patterns P located at both ends of the mask unit portion C is called the total pitch (TP).

[0156] When the mask metal film 110 has a pair of long sides (X-axis direction) and a pair of short sides (Y-axis direction), the total spacing can be calculated based on the long sides (X1-axis side, X2-axis side) and short sides (Y1-axis side, Y2-axis side) of the mask unit C. As an example, in the X1 direction, the distance from the mask pattern P arranged at one end to the mask pattern P arranged at the other end can be calculated (X1-axis total spacing). In the X2 direction, Y1 direction, and Y2 direction, the X2-axis total spacing, the Y1-axis total spacing, and the Y2-axis total spacing can also be calculated.

[0157] like Fig.11 , if a lamination process for bonding the mask metal film 110 is performed on the moving plate 50 , the mask metal film 110 may be stretched. Fig.12 The symbol DS in the middle shows the initial design shape or the pre-designed area of ​​the mask cell portion C of the mask metal film 110. The symbol ES schematically shows the shape of the mask cell portion C of the mask metal film 110 after lamination is actually stretched.

[0158] The total spacing measured in each X1, X2, Y1, and Y2 is preferably at least greater than 10 μm and less than 100 μm. If the value is less than this reference, it is difficult for the mask 100 to maintain a sufficiently tight state on the frame 200 when the mask 100 is connected to the frame 200 later. If it is greater than this reference, the tension of the mask 100 acting on the frame 200 becomes larger, thereby increasing the possibility of alignment errors of the mask pattern P, and there is a possibility of wrinkles forming in parts of the mask 100. The total spacing measured in each X1, X2, Y1, and Y2 is preferably at least greater than 10 μm and less than 100 μm, but considering that both sides of the mask metal film with a long side of 300 mm can be stretched by about 15 μm respectively and used, the total spacing measured is more preferably at least greater than 10 μm and less than 50 μm. Furthermore, considering that both sides of the mask metal film with a long side of about 150 mm can be stretched to about 5 to 10 μm and used, the total pitch measured is more preferably at least greater than 10 μm and less than 30 μm.

[0159] In addition, the total spacing measured in each X1, X2, Y1, and Y2 is based on the long side of the mask metal film, preferably 0.001% to 0.05%. The total spacing can also be regarded as the stretching rate on one side of the mask metal film. As an example, when the two sides of the mask metal film with a long side of about 300mm are stretched by about 15μm, the total spacing is about 30μm, which corresponds to a stretching rate of 0.01% based on the long side of the mask metal film. As another example, when the two sides of the mask metal film with a long side of about 150mm are stretched by about 5 to 10μm, the total spacing is about 10 to 20μm, which corresponds to a stretching rate of 0.0067 to 0.013% based on the long side of the mask metal film. The total spacing or stretching rate of the above examples takes an intermediate value to correspond to stretching from 0.001% to 0.05%. Within the above range, when the mask 100 is subsequently connected to the frame 200 , the mask 100 can be maintained in a sufficiently tight state on the frame 200 , and at the same time, excessive tension can be prevented from being applied to the frame 200 based on the stretching degree of the mask 100 .

[0160] However, it is not easy to achieve the same total spacing on each of X1, X2, Y1, and Y2. Fig.11 As shown, if lamination is performed in only one direction, a larger stretch (or total spacing) will only be present in the direction of that specific axis.

[0161] Therefore, the present invention is characterized in that the lamination process of the mask metal film 110 and the moving plate 50 is controlled so that the same total pitch is presented on each axis.

[0162] Figure 13 to Figure 14 1 is a schematic diagram illustrating a bonding process of a mask metal film 110 and a moving plate 50 according to an embodiment of the present invention. Hereinafter, the corners of the quadrilateral mask metal film 110 are represented by symbols 110-1, 110-2, 110-3, and 110-4, and the center or weight center of the mask metal film 110 is represented by symbol O. Figure 5 The process described in (d) of sandwiching the dry film resist layer 55 between the mask metal film 110 and the moving plate 50 and bonding them is divided into multiple steps and described below.

[0163] Reference Fig.13 (a), first, the moving plate 50 and the mask metal film 110 can be pressed while passing through LM1 between the twin rollers TR and BR. Figures 13 to 16 The diagram is a schematic diagram of the plane direction, so the upper roller TR is omitted in the figure, and only the lower roller BR is shown. In order to press the entire area of ​​the mask metal film 110, the diagonal axis LX connecting the vertex 110-1 and the vertex 110-2 of the mask metal film 110 can be perpendicular to the direction of the roller, or the movable plate 50 and the mask metal film 110 can be passed through LM1 in a horizontal direction with the diagonal axis LX.

[0164] Fig.13 The step (a) is equivalent to a primary bonding or temporary bonding step. Fig.13 The second bonding or actual bonding step after step (b) can be pressed with a smaller strength value. Of course, it is also possible to continue pressing with the same strength. Fig.13 After the step (a) is completed, the mask metal film 110 is completely bonded to the moving plate 50. However, the mask metal film 110 is not stretched at the desired total pitch value, so further Fig.13 Optionally, it is also possible to Fig.13 In the case of step (a) Fig.13 (b) subsequent steps.

[0165] Then, refer to Fig.13 (b) Fig.13 The direction of the mask metal film 110 is different from that of the step (a), and the LM2 rollers TR and BR are passed through the LM2 rollers TR and BR. Fig.13 The direction different from the LX axis of (a), that is, the direction perpendicular to the axis connecting the apexes 110 - 1 and 110 - 2 passes through the LM2 rollers TR and BR.

[0166] At this time, when the mask metal film 110 passes, the entire area is not pressed, but the mask metal film is arbitrarily divided into the first area R1 and the second area R2, and only the second area R2 is pressed when passing the LM2 rollers TR and BR, while the first area R1 is not pressed.

[0167] First, pull the upper roller TR and the lower roller BR apart to keep a sufficient distance between them, and then the mask metal film 110 and the movable plate 50 can be placed on the lower roller BR. No lamination is performed in this step. The area surrounded by the vertices 110-1, 110-2 and 110-4 of the mask metal film 110 is divided into the first area R1, and the area surrounded by the vertices 110-1, 110-2 and 110-3 is divided into the second area R2, which can be aligned so that the line connecting the vertex 110-1 and the vertex 110-2 is located on the lower roller BR. In addition, by shortening the distance between the rollers TR and BR, only the second area R2 of the mask metal film 110 is passed through the LM2 rollers TR and BR and laminated at the same time. That is, based on the direction of passing through the LM2 rollers TR and BR, the first area R1 is located in front of the rollers TR and BR, and the second area R2 is located in the back of the rollers TR and BR, so that only the second area R2 can be laminated. The second area R2 is in Fig.13 The state after bonding has been performed in step (a).

[0168] In addition, before laminating only the second region R2, at least a portion of the second region R2 may be tilted from the movable plate 50. For example, by partially lifting the vertex 110-3 of the second region R2, the second region R2 may be tilted from the vertex 110-3 to the center O. Alternatively, the entire second region R2 may be tilted instead of a portion. This is to Fig.13 The first bonding state in (a) is reset, and the second region R2 is pressed, so that the total spacing is controlled by the same stretching. Pressing is performed from the center O of the mask metal film 110 to the vertex 110-3, so that the mask metal film 110 in this direction is stretched, so that the total spacing value can be re-formed.

[0169] Then, refer to Fig.13 (c), the mask metal film 110 can be different from Fig.13 The direction of step (b) is passed through the LM3 rollers TR and BR. In this step, only the first region R1 is passed through the LM3 rollers TR and BR and pressed, and the second region R2 may not be pressed.

[0170] First, pull the upper roller TR and the lower roller BR apart to keep a sufficient distance between them, and then the mask metal film 110 and the movable plate 50 can be placed on the lower roller BR. No pressing is performed in this step. Alignment is performed so that the line connecting the vertex 110-2 and the vertex 110-1 of the mask metal film 110 is placed on the lower roller BR. In addition, by shortening the distance between the rollers TR and BR, only the first region R1 of the mask metal film 110 is pressed while passing through the LM3 rollers TR and BR. That is, based on the direction of passing through the LM3 rollers TR and BR, the second region R2 is located in front of the rollers TR and BR, and the first region R1 is located in the back of the rollers TR and BR, so that only the first region R1 can be pressed. The second region R2 is in Fig.13 The state where pressing has been performed in step (b).

[0171] In addition, before laminating only the first region R1, at least a portion of the first region R1 may be tilted from the movable plate 50. For example, by partially lifting the vertex 110-4 of the first region R1, the first region R1 may be tilted from the vertex 110-4 toward the center O. Alternatively, the entire first region R1 may be tilted instead of a portion. This is to Fig.13 The first bonding state in (a) is reset, and the first region R1 is pressed, so that the total spacing is controlled by the same stretching. Pressing is performed from the center O of the mask metal film 110 to the vertex 110-4, so that the mask metal film 110 in this direction is stretched, so that the total spacing value can be re-formed.

[0172] Then, refer to Fig.14(d), the mask metal film 110 can be different from Fig.13 The direction of step (c) is through the LM4 rollers TR and BR. The LM4 rollers TR and BR may be passed along the perpendicular direction of the axis connecting the vertex 110-4 and the vertex 110-3. The perpendicular direction of the axis connecting the vertex 110-4 and the vertex 110-3 is Fig.13 (b) and Fig.13 The direction in step (c) is different.

[0173] At this time, when the mask metal film 110 passes, not all regions are pressed, but the mask metal film is arbitrarily divided into the third region R3 and the fourth region R4, and only the fourth region R4 is pressed when it passes through the LM4 rollers TR and BR, and the third region R1 is not pressed. The third region R3 and the fourth region R4, like the first region R1 and the second region R2, can correspond to the divided regions in the mask metal film 110. However, the division direction of the third region R3 and the fourth region R4 is different from the division direction of the first region R1 and the second region R2, so they correspond to different regions.

[0174] First, the upper roller TR and the lower roller BR are pulled apart to keep a sufficient distance between them, and then the mask metal film 110 and the movable plate 50 can be placed on the lower roller BR. No pressing is performed in this step. The area surrounded by the vertices 110-2, 110-3 and 110-4 of the mask metal film 110 is divided into the third area R3, and the area surrounded by the vertices 110-1, 110-3 and 110-4 is divided into the fourth area R4, and alignment can be performed so that the line connecting the vertex 110-4 and the vertex 110-3 is placed on the lower roller BR. In addition, by shortening the distance between the rollers TR and BR, only the fourth area R4 of the mask metal film 110 is pressed while passing through the rollers TR and BR of LM4. That is, based on the direction of passing through the rollers TR and BR of LM4, the third area R3 is located in a forward position relative to the rollers TR and BR, and the fourth area R4 is located in a backward position relative to the rollers TR and BR, so that only the fourth area R2 can be pressed.

[0175] In addition, before laminating only the fourth region R4, at least a portion of the fourth region R1 may be tilted from the movable plate 50. For example, by partially lifting the vertex 110-1 of the fourth region R4, the fourth region R4 may be tilted from the vertex 110-1 toward the center O. It is also possible to tilt all but not a portion of the fourth region R4. This is to press the fourth region R4 so that the total spacing is controlled with the same stretching. Pressing from the center O of the mask metal film 110 toward the vertex 110-1 stretches the mask metal film 110 in this direction, so that the total spacing value can be reformed.

[0176] Then, refer to Fig.14(e), the mask metal film 110 can be different from Fig.14 The direction of step (d) is passed through the LM5 rollers TR and BR. In this step, only the third region R3 is passed through the LM5 rollers TR and BR and pressed, and the fourth region R4 may not be pressed.

[0177] First, pull the upper roller TR and the lower roller BR apart to keep a sufficient distance between them, and then the mask metal film 110 and the movable plate 50 can be placed on the lower roller BR. No lamination is performed in this step. Alignment can be performed so that the line connecting the vertex 110-3 of the mask metal film 110 and the vertex 110-3 is placed on the lower roller BR. In addition, by shortening the distance between the rollers TR and BR, only the third region R3 of the mask metal film 110 is pressed while passing through the LM5 rollers TR and BR. That is, based on the direction of passing through the LM5 rollers TR and BR, the fourth region R4 is located in front of the rollers TR and BR, and the third region R3 is located in the back of the rollers TR and BR, so that only the third region R3 can be pressed. The fourth region R4 is in Fig.14 The state where the pressing has been performed in step (d).

[0178] In addition, before laminating only the third region R3, at least a portion of the third region R3 may be tilted from the movable plate 50. For example, by partially lifting the vertex 110-2 of the third region R3, the third region R3 may be tilted from the vertex 110-2 toward the center O. It is also possible to tilt the entire third region R3 instead of a portion thereof. This is to press the third region R3 so as to achieve control of the total spacing with the same stretching. Pressing is performed from the center O of the mask metal film 110 toward the vertex 110-2 so that the mask metal film 110 in this direction is stretched, so that the total spacing value can be reformed.

[0179] Results, based on Figure 13 to Figure 14 The roller passes through (LM1 to LM5) and the pressing process, and there is no difference between (i) pressing from the center O to the vertex 110-3, (ii) pressing from the center O to the vertex 110-4, (iii) pressing from the center O to the vertex 110-1, and (iii) pressing from the center O to the vertex 110-2. Pressing the quadrilateral mask metal film 110 in four directions has the effect of making each region (or Fig.12 The same total spacing effect is presented in the X1, X2, Y1, and Y2 axis directions.

[0180] Figure 15 to Figure 16 FIG. 5 is a schematic diagram illustrating a bonding process of a mask metal film 110 and a moving plate 50 according to another embodiment of the present invention.

[0181] Figure 15 to Figure 16 The process can be Figure 13 to Figure 14The process is similar to that of . However, the difference is that the first region R1 and the second region R2 and the third region R3 and the fourth region R4 are divided based on parallel lines of long sides or short sides instead of a pair of vertices 110-1, 110-2 or 110-3, 110-4 in mutually diagonal directions of the mask metal film 110.

[0182] exist Fig.15 In step (a), the mask metal film 110 is completely passed through the LM1 rollers TR and BR and pressed, so that it can be completely bonded to the movable plate 50.

[0183] Then, in Fig.15 In step (b), based on the direction of rollers TR and BR passing through LM2, the first region R1 is located in front of the rollers TR and BR, and the second region R2 is located in the back of the rollers TR and BR, so that only the second region R2 can be pressed.

[0184] Then, in Fig.15 In step (c), based on the direction of the LM3 rollers TR and BR, the second region R2 is located in front of the rollers TR and BR, and the first region R1 is located in the back of the rollers TR and BR, so that only the first region R1 can be pressed.

[0185] Then, in Fig.16 In step (d), the first region R1 and the second region R2 are different from each other and can be divided into a third region R3 and a fourth region R4. Then, based on the direction of the rollers TR and BR passing through LM4, the third region R3 is located in front of the rollers TR and BR, and the fourth region R4 is located in the rear of the rollers TR and BR, so that only the fourth region R4 can be pressed.

[0186] Then, in Fig.16 In step (d), based on the direction of rollers TR and BR passing through LM5, the fourth region R4 is located in front of the rollers TR and BR, and the third region R3 is located in the back of the rollers TR and BR, so that only the third region R3 can be pressed.

[0187] Results, based on Figure 15 to Figure 16 The rollers of LM1 to LM5 and the lamination process are no different from lamination performed four times: (i) from the center O to the vertices 110-3 and 110-2 (short side direction), (ii) from the center O to the vertices 110-4 and 110-1 (short side direction), (iii) from the center O to the vertices 110-1 and 110-3 (long side direction), and (iv) from the center O to the vertices 110-2 and 110-4 (long side direction). The quadrilateral mask metal film 110 is laminated in four directions, so that each region (or Fig.12 The same total spacing effect is presented in the X1, X2, Y1, and Y2 axis directions.

[0188] Table 1 shows Figure 13 to Figure 14 The total spacing data (μm) before (Ref) and after (Lami) the lamination process. Fig.12 The initial design pattern DS shown in the figure is used as a reference. When contracted in the X1, X2, Y1, and Y2 axis directions, negative (-) values ​​are displayed, and when stretched, positive (+) values ​​are achieved. If the total spacing data is a positive value, it will be displayed in bold.

[0189] [Table 1]

[0190]

[0191] Referring to the above data, it can be seen that after the lamination process, all directions of X1, X2, Y1, and Y2 are stretched. Fig.12 In particular, it can be confirmed that stretching is obtained in each of X1, X2, Y1, and Y2, and the total distance measured can be at least greater than 10 μm and less than 100 μm.

[0192] Table 2 shows the results of various samples. Figure 13 to Figure 14 ,or Figure 15 to Figure 16 Total pitch data (μm) after lamination process.

[0193] [Table 2]

[0194] Sample serial number. X1 X2 Y1 Y2 01 55.1 38.5 34.0 32.1 02 47.5 41.6 28.3 39.3 03 40.6 28.4 24.3 30.0 04 62.1 94.6 31.6 48.2 05 76.0 53.2 44.1 29.5 06 39.5 37.3 39.1 36.4 07 48.2 43.0 41.4 33.3 08 45.0 40.9 39.9 35.3 09 48.2 36.6 47.0 40.5 10 37.1 50.3 39.1 28.0 11 26.5 27.2 13.8 17.9 12 45.5 41.7 41.1 36.9 13 62.6 50.9 45.0 35.8 14 41.8 27.0 28.9 23.6 15 50.3 36.8 34.1 36.0 16 48.1 34.8 33.9 37.7 17 53.2 45.3 38.4 28.2 18 45.8 41.8 43.4 42.5 19 55.3 43.1 39.5 35.3 20 53.4 45.0 46.2 41.5 21 36.2 57.8 45.8 17.2 22 60.3 49.0 44.9 40.6 23 54.1 51.3 38.1 34.3 24 46.9 48.3 43.7 41.9 25 59.1 50.1 47.2 40.5 26 32.9 18.4 13.7 23.8 27 50.7 60.4 46.9 52.5 28 62.7 47.5 47.9 46.9 29 23.8 35.2 20.4 21.9 30 19.5 23.1 11.8 15.3 31 17.4 17.3 11.0 13.6 32 23.0 20.2 15.2 13.2 33 22.7 21.5 16.5 16.6 34 20.9 19.7 15.7 12.7 35 24.7 22.2 18.3 14.3 36 18.8 30.4 23.2 15.0

[0195] Referring to the above data, it can be seen that after the lamination process, stretching occurs in all directions X1, X2, Y1, and Y2, and the total spacing measured on each of X1, X2, Y1, and Y2 is at least greater than 10 μm and less than 100 μm.

[0196] Fig.17 Schematic diagrams showing a state where masks of a comparative example and an embodiment of the present invention are connected to a frame.

[0197] Fig.17 (a) is a method using a method according to Korean Patent Application No. 2020-0043485 Fig.11 The mask is connected to the frame by a laminate of a mask metal film and a moving plate. In the prior art, liquid wax is used to bond the substrate and the mask metal film it supports. The liquid wax layer is baked at a temperature of about 100 to 160°C to vaporize the solvent during use, and the lamination process is also carried out at a temperature of about 110°C. The total spacing of the mask metal film is controlled by controlling the temperature. Fig.17As shown in (a), it is difficult to uniformly control the total spacing in each area of ​​the mask metal film, so there is a problem of wrinkles on the mask after the mask is connected to the frame.

[0198] Fig.17 (b) is used according to Figures 13 to 16 The process of forming a laminate of a mask metal film and a movable plate, and connecting the mask to a frame [the process of connecting the mask 100 to the frame 200 refers to Figure 23 to Figure 27 ]. Since the total spacing in each area of ​​the mask metal film is equally controlled, it can be seen that after the mask is connected to the frame, the mask is in a taut state without wrinkles.

[0199] Fig.18 It is a schematic side cross-sectional view of a process of forming a mask pattern P″ ( P1 ″, P2 ″) according to a comparative example. Fig.19 is based on Fig.18 A partially enlarged side cross-sectional view of a mask pattern of a mask 100 ″ of a comparative example.

[0200] According to Korean Patent Application No. 2020-0043485, etc. Fig.18 In a comparative example, two layers of a liquid wax layer 55" and a photoresist layer 23" may be used on the template 50" and a mask metal film 110" may be bonded. Fig.18 (a) and Fig.18 (b), after the first mask pattern P1" is formed by wet etching and the second insulating portion M2" is formed, the second mask pattern P2" is formed by wet etching for the second time. A hole SN may be present in a portion of the first mask pattern P1", which penetrates the mask metal film 110" and exposes the lower photoresist layer 23".

[0201] Reference Fig.18 (a) shows that during the second wet etching WE2, the thin mask metal film 110″ around the hole SN cannot be closely attached to the photoresist layer 23″, and a warping portion FP exists. The warping portion FP will further occur due to the insufficient adhesion of the photoresist layer 23″. The wet etching solution WE2′ penetrates between the warping portions FP, and the thin portion is removed first. The side of the removed portion is exposed and its side may be further etched. Thus, Fig.18 As shown in (b), the lower portion of the second mask pattern P2" is further etched toward the inner side than the upper portion. Observed from another angle, the side of the second mask pattern P2" may have a positive inclination and a negative inclination. When an arbitrary normal line is generated along the side surface of the second mask pattern P2", the normal line may have a positive slope and a negative slope.

[0202] Reference Fig.19, the upper width D1″ of the first mask pattern P1″ is greater than the lower width D2″ of the second mask pattern P2″. ​​In addition, the lower width D3″ of the first mask pattern P1″ [or, the upper width D3″ of the second mask pattern P2″] is smaller than the lower width D2″ of the second mask pattern P2″. ​​Therefore, the side end surface shape of the mask pattern P″ may present a shape similar to the shape of water drops falling on the floor.

[0203] The two side surfaces of the first mask pattern P1″ are concave curves, and the two side surfaces of the second mask pattern P2″ are convex curves. The lower portion of the second mask pattern P2″ is further etched inwardly of the side surface, and the height tc″ of the most protruding portion PT″ on the side surface of the second mask pattern P2″ is at a relatively high position. Assuming that the thickness tb″ of the second mask pattern P2″ is 1, the height position of the protruding portion PT″ is at least greater than 1 / 2 and less than 1.

[0204] The lower portion of the second mask pattern P2" is further etched inwardly of the side surface, and the horizontal distance da" from the lower surface of the second mask pattern P2" to the protruding portion PT" at the end is also relatively large. The angle ta" formed by the virtual straight line connecting the upper corner of the first mask pattern P1" to the protruding portion PT" and the lower surface of the second mask pattern P2" may be approximately less than 60°.

[0205] Figure 20 to Figure 21 FIG. 1 is a schematic side cross-sectional view of a process of forming a mask pattern P according to an embodiment of the present invention. Fig. 22 FIG. 1 is a partially enlarged side cross-sectional view of a mask pattern of a mask according to an embodiment of the present invention. Fig.19 The mask pattern P″ of the mask 100″ of the comparative example is Fig. 22 The mask pattern P of the mask 100 of the present invention is compared. Figure 20 to Figure 21 and Figure 6 (f) to Figure 8 This corresponds to the formation process of the mask pattern P described in detail in (h).

[0206] like Fig. 20 As shown in (a), a patterned first insulating portion M1 may be formed in the mask metal film 110 .

[0207] Next, if Fig. 20 As shown in (b), a mask pattern P1 having a predetermined depth may be formed on the upper portion of the mask metal film 110 by a first wet etching WE1. The first mask pattern P1 may be substantially formed in an arc shape.

[0208] The wet etching WE1 has an isotropic etching characteristic, so the width PA′ of the first mask pattern P1 has a different width from the pitch PA between the patterns of the first insulating portion M1, and can have a width greater than the pitch PA between the patterns of the first insulating portion M1. In other words, undercuts (UC) are formed at the lower portions of both sides of the first insulating portion M1, so the width PA′ of the first mask pattern P1 can be greater than the pitch PA between the patterns of the first insulating portion M1 by a width equivalent to the formation of the undercut UC.

[0209] Next, if Fig. 20 As shown in (c), a second insulating portion M2 may be formed on the mask metal film 110 and the first mask pattern P1.

[0210] Next, if Fig.21 As shown in (d), a second mask pattern P2 penetrating from the first mask pattern P1 to the lower surface of the mask metal film 110 can be formed on the upper portion of the mask metal film 110 by a second wet etching WE2.

[0211] The wet etching WE2 has an isotropic etching characteristic, so the width PB′ of the second mask pattern P2 has a different width from the spacing PB between the patterns of the second insulating portion M2, and may have a width greater than the spacing PB between the patterns of the second insulating portion M2. However, the thickness of the second mask pattern P2 is less than 25% of the thickness of the first mask pattern P1, and the degree of side etching during the isotropic etching process is less than that of the first mask pattern P1.

[0212] In addition, the adhesion and etching resistance of the dry film resist 55 of the present invention are better than Fig.18 The liquid wax layer 55″ and the photoresist layer 23″ of the comparative example. The mask metal film 110 is closely attached to the dry film resist layer 55 by a strong adhesive force, so that there is no warping portion FP. Since there is no warping portion FP, the wet etching liquid WE2′ can be prevented from entering the interface between the mask metal film 110 and the dry film resist layer 55. Therefore, further side etching can be prevented from occurring at the lower part of the second mask pattern P2. Fig.21 As shown in the enlarged portion of (d), the lower portion of the second mask pattern P2 does not show a further etching toward the inner side of the side surface compared to the upper portion. When viewed from another angle, the side surface of the second mask pattern P2 has a positive slope. When an arbitrary normal line is generated along the side surface of the second mask pattern P2, the normal line has a positive slope.

[0213] Next, if Fig.21 As shown in (e), the process of forming the mask pattern P can be completed by removing the second insulating portion M2.

[0214] Reference Fig. 22, the upper width D1 of the first mask pattern P1 is greater than the lower width D2 of the second mask pattern P2. In addition, since the side of the second mask pattern P2 has a positive slope, the lower width of the first mask pattern P1 [or, the upper width of the second mask pattern P2] may be greater than the lower width D2 of the second mask pattern P2.

[0215] Reference Fig. 22 In the magnified part on the left side, the two side surfaces of the first mask pattern P1 are concave curves, and the two side surfaces of the second mask pattern P2 (P2-1) are convex curves, nearly straight lines, or straight lines. The lower part of the second mask pattern P2 (P2-1) is not etched further inwardly toward the side surface, so the height of the most protruding part PT1 on the side surface of the second mask pattern P2 (P2-1) may correspond to the lower surface 101 of the second mask pattern P2 (P2-1) (the height is 0). The angle ta formed by the virtual straight line connecting the upper corner of the first mask pattern P1 to the lower corner of the first mask pattern P1 and the lower surface 101 of the second mask pattern P2 (P2-1) is less than about 55°, preferably, about 45° to 55°.

[0216] Reference Fig. 22 In the right enlarged portion, the two side surfaces of the first mask pattern P1 are concave curves, and the two side surfaces of the second mask pattern P2 (P2-2) are convex curves. In this case, the lower portion of the second mask pattern P2 (P2-2) is slightly etched toward the inner side of the side surface. Nevertheless, the mask metal film 110 is tightly attached to the dry film resist layer 55 with a strong adhesive force, thereby significantly reducing the degree of side etching of the lower portion of the second mask pattern P2 (P2-2). Compared with Fig.19 In the comparative example, the height tc of the most protruding portion PT on the side of the second mask pattern P2 (P2-2) is relatively low. Based on the thickness tb of the second mask pattern P2 (P2-2), the height of the protruding portion PT is at least less than 1 / 3 of the thickness tb.

[0217] The lower portion of the second mask pattern P2 (P2-2) is relatively less etched toward the inner side, so the horizontal distance da from the end of the lower surface 101 of the second mask pattern P2 (P2-2) to the protruding portion PT2 is also relatively small. The angle ta" formed by the virtual straight line connecting the upper corner of the first mask pattern P1 of the comparative example to the protruding portion PT" and the lower surface of the second mask pattern P2" is approximately less than 60°. The angle ta formed by the virtual straight line connecting the upper corner of the first mask pattern P1 to the lower corner of the first mask pattern P1 and the lower surface 101 of the second mask pattern P2 (P2-1) may be approximately less than 55°, and preferably, may be approximately 45° to 55°.

[0218] Fig.23FIG. 2 is a schematic diagram of a process of loading a stacked body 20 of a mask 100 and a moving plate 50 onto a frame 200 according to an embodiment of the present invention.

[0219] Reference Fig.23 , the movable plate 50 can be transferred by the vacuum suction cup 90. The vacuum suction cup 90 can be used to suck the opposite side of the movable plate 50 to which the mask 100 is attached and transfer it. The vacuum suction cup 90 can be connected to a moving means (not shown) that moves in the x, v, z, and θ axes. In addition, the vacuum suction cup 90 can also be connected to a flipping means (not shown) that flips the movable plate 50 by sucking it. Fig.16 As shown in (b), during the process in which the vacuum suction cup 90 absorbs the movable plate 50 and then turns over to transfer the movable plate 50 to the frame 200, the bonding state and alignment state of the mask 100 will not be affected.

[0220] Mask 100 passed Figures 13 to 16 The lamination process is in a stretched state, such as being stretched, bonded and fixed on a movable plate 50 with a tensile force applied in a lateral direction, and may contain a tensile force IT.

[0221] Fig.24 It is a schematic diagram of a state in which a moving plate is loaded onto a frame and a mask is matched to a unit area of ​​the frame according to an embodiment of the present invention.

[0222] Reference Fig.24 , the mask 100 can correspond to one mask unit region CR of the frame 200. The mask 100 can correspond to the mask unit region CR by loading the movable plate 50 onto the frame 200 [or the mask unit sheet portion 220]. Whether the mask 100 corresponds to the mask unit region CR can be observed using a microscope while controlling the position of the movable plate 50 / vacuum suction cup 90. Since the movable plate 50 presses the mask 100, the mask 100 can be closely attached to the frame 200.

[0223] A plurality of movable plates 50 may be loaded onto the frame 200 [or the mask unit sheet portion 220] sequentially or simultaneously so that each mask 100 corresponds to each mask unit region CR. Since the movable plates 50 and the mask 100 have the same size, the movable plates 50 corresponding to a specific mask unit region CR11 and the movable plates 50 corresponding to the adjacent mask unit regions CR12 and CR21 do not interfere / overlap and have a predetermined spacing. The predetermined spacing may be less than 1 / 2 of the width of the first grid sheet portion 223 and the second grid sheet portion 225.

[0224] In addition, the lower support body 70 may be arranged below the frame 200. The lower support body 70 may press the reverse side of the mask unit region CR in contact with the mask 100. At the same time, since the lower support body 70 and the moving plate 50 press the edge of the mask 100 and the frame 200 [or the mask unit sheet portion 220] in opposite directions to each other, the alignment state of the mask 100 may be maintained without distortion.

[0225] Next, laser L is irradiated to the mask 100, and the mask 100 is connected to the frame 200 by laser welding. The laser L may be irradiated to the welding part WP of the mask 100 through the moving plate 50. The welding part WP of the mask 100 welded by laser will generate a welding bead WB, which may have the same material as the mask 100 / frame 200 and be connected as one.

[0226] Fig.25 It is a partially enlarged side cross-sectional view of a state where a welding bead WB is formed in a notch portion RC according to an embodiment of the present invention.

[0227] Reference Fig.25 The welding portion WP of the mask 100 is thicker than other portions of the mask 100, so it is easy to generate welding beads WB, thereby improving welding adhesion.

[0228] In addition, the portion used to form the recessed portion RC may present a step WS. The step WS may be concave with respect to the surface in contact with the target substrate 1900. As an example, the height TW of the step WS may be approximately 5 to 9 μm. The step WS is concave, and when the frame 200 [or the mask unit sheet portion 221, 223] is welded to the mask 100, the weld bead WB generated upward from the bottom portion of the recessed portion RC will not exceed the upper surface [first surface 101] of the mask 100. In other words, the uppermost end of the weld bead WB is lower than or equal to the upper surface [first surface 101] of the mask 100. Therefore, it is possible to prevent the mask 100 from warping up from the target substrate 1900, so that the mask 100 and the target substrate 1900 are in close contact, which has the effect of improving the uniformity of the size and brightness of the OLED pixel 1700.

[0229] Fig.26 It is a schematic diagram of a process of separating the mask from the moving plate after connecting the mask to the frame according to an embodiment of the present invention.

[0230] Reference Fig.26After the mask 100 is connected to the frame 200, the mask 100 and the movable plate 50 can be debonded. The separation of the mask 100 and the movable plate 50 can be achieved by heating the dry film resist layer 55, chemically treating the dry film resist layer 55, applying ultrasonic waves US, and applying ultraviolet rays UV. If at least one of heating ET, chemically treating the dry film resist layer 55, applying ultrasonic waves US, and applying ultraviolet rays UV is performed, the adhesive force between the mask 100 and the movable plate 50 becomes weak, and the mask 100 and the movable plate 50 can be separated.

[0231] When the movable plate 50 is separated, the tensile force IT acting on the mask 100 is released and converted into a tension TS that tightens both sides of the mask 100. In other words, the mask 100 is stretched and bonded to the movable plate 50 at a value greater than the original design value, and is welded and attached to the frame 200 to maintain this state, thereby maintaining a tensioned state [a state in which the mask unit sheet 220 itself applies tension TS to the surrounding mask unit sheet 220]. Therefore, the mask 100 is attached to the frame 200 in a tensioned state, so that wrinkles, deformation, etc. will not occur. As a result, there is an effect of reducing the alignment error of the mask 100 and the PPA error between the units C.

[0232] The dry film resist layer 55 remaining in the mask 100 after the moving plate 50 is separated can be removed by washing.

[0233] Fig. 27 FIG. 1 is a schematic diagram of a state where a mask 100 is connected to a frame 200 according to an embodiment of the present invention. Fig. 27 The state in which all the masks 100 are attached to the unit region CR of the frame 200 is shown. The masks 100 may be attached one by one and then the movable plate 50 may be separated, or all the masks 100 may be attached and then all the movable plates 50 may be separated.

[0234] Existing Figure 1 The mask 10 of the present invention has a longer length because it includes six unit parts C1-C6. On the contrary, the mask 100 of the present invention has a shorter length because it includes one unit part C, so the degree of distortion of pixel position accuracy (PPA) may be reduced. In addition, since the present invention only needs to correspond to one unit part C of the mask 100 and confirm the alignment state, it is compared with the existing method that needs to correspond to multiple unit parts C (C1-C6) at the same time and confirm all the alignment states [refer to Figure 1 ], which can significantly shorten the manufacturing time.

[0235] After all the masks 100 are attached to the corresponding mask unit regions CR, if the movable plate 50 and the masks 100 are separated, the plurality of masks 100 apply tension TS of contraction in opposite directions to each other, so these forces cancel each other out, and no deformation occurs in the mask unit sheet portion 220. For example, in the first grid sheet portion 223 between the mask 100 including the C11 unit portion and the mask 100 including the CR12 unit portion, the tension TS acting in the right direction of the mask 100 including the C11 unit portion and the tension TS acting in the left direction of the mask 100 including the C12 unit portion can cancel each other out. Thus, there is an advantage that deformation of the frame 200 [or the mask unit sheet portion 220] due to the tension TS can be minimized, and alignment errors of the mask 100 [or the mask pattern P] can be minimized.

[0236] Fig.28 FIG. 1 is a schematic diagram of an OLED pixel deposition apparatus 1000 using a connector 10 of a mask and a frame according to an embodiment of the present invention.

[0237] Reference Fig.28 The OLED pixel deposition device 1000 includes: a magnetic plate 1300 accommodating a magnet 1310 and arranged with a cooling water pipe 1350 ; and a deposition source supply part 1500 supplying an organic source 1600 from the lower part of the magnetic plate 1300 .

[0238] A target substrate 1900 such as glass for depositing the organic source 1600 may be inserted between the magnetic plate 1300 and the deposition source supply unit 1500. A connector 10 (or FMM) of a mask and a frame for depositing the organic source 1600 according to different pixels may be arranged on the target substrate 1900 in a close or very close manner. The magnet 1310 may generate a magnetic field and be closely attached to the target substrate 1900 through the magnetic field.

[0239] The deposition source supply unit 1500 can reciprocate the left and right paths and supply the organic source 1600, and the organic source 1600 supplied by the deposition source supply unit 1500 can be attached to one side of the target substrate 900 through the mask pattern P formed on the connector 10 of the mask and the frame. The organic source 1600 deposited after passing through the mask pattern P of the connector 10 of the mask and the frame can be used as a pixel 1700 of the OLED.

[0240] In particular, the side surface of the second mask pattern P2 of the mask pattern P has a positive slope, and thus has the effect of better preventing uneven deposition of the pixel 1700 caused by the shadow effect. Fig.21As shown, the organic source 1600 will not be shadowed by the second mask pattern P2, and the OLED pixel 1700 can be deposited in a shape suitable for the width of the second mask pattern P2, and the deposition of the pixel 1700 can be performed with a uniform thickness as a whole.

[0241] As described above, the present invention has been illustrated and described by way of preferred embodiments, but is not limited to the above embodiments, and those skilled in the art can make various modifications and changes without departing from the spirit of the present invention. Such modifications and changes all fall within the scope of the present invention and the appended claims.

Claims

1. A method for manufacturing a laminate of a mask and a moving plate, the laminate of the mask and the moving plate being used to support a mask for forming OLED pixels and to correspond the mask to a frame, the method comprising the following steps: (a) bonding the first side of the mask metal film to the moving plate; (b) manufacturing a mask by forming a mask pattern on a second surface of the mask metal film opposite to the first surface, The step (a) comprises the following steps: (a1) arranging a mask metal film on the movable plate; (a2) passing the movable plate and the mask metal film between a pair of rollers facing each other along a first direction on the mask metal film and pressing them together; (a3) The movable plate and the mask metal film are passed between the pair of rollers along a second direction different from the first direction and pressed together.

2. The method for manufacturing a laminate of a mask and a movable plate according to claim 1, wherein: The mask metal film is in a quadrilateral shape.

3. The method for manufacturing a laminate of a mask and a movable plate according to claim 1, wherein: The mask metal film is arbitrarily divided into a first region and a second region, In the step (a2), based on the direction passing between the pair of rollers, the first region is located forward of the pair of rollers, the second region is located backward of the pair of rollers, and lamination is performed in the second region.

4. The method for manufacturing a laminate of a mask and a movable plate according to claim 3, wherein: In the step (a3), based on the direction passing between the pair of rollers, the second region is located forward of the pair of rollers, the first region is located backward of the pair of rollers, and lamination is performed in the first region.

5. The method for manufacturing a laminate of a mask and a movable plate according to claim 3, wherein: The first region and the second region correspond to regions divided in the mask metal film, respectively.

6. The method for manufacturing a laminate of a mask and a movable plate according to claim 4, wherein: Further comprising the steps of: (a4) Passing the movable plate and the mask metal film between the pair of rollers and pressing them together along a third direction different from the direction in which the mask metal film passes between the pair of rollers in the step (a2) or the step (a3).

7. The method for manufacturing a laminate of a mask and a movable plate according to claim 6, wherein: The mask metal film is arbitrarily divided into a third region and a fourth region, In the step (a4), based on the third direction, the third region is located forward of the pair of rollers, the fourth region is located backward of the pair of rollers, and lamination is performed in the fourth region.

8. The method for manufacturing a laminate of a mask and a movable plate according to claim 7, wherein: Further comprising the steps of: (a5) The fourth region is located forward of the pair of rollers, the third region is located backward of the pair of rollers, and lamination is performed in the third region.

9. The method for manufacturing a laminate of a mask and a movable plate according to claim 7, wherein: The third region and the fourth region respectively correspond to the regions divided in the mask metal film, and are located in different regions from the first region and the second region.

10. The method for manufacturing a laminate of a mask and a moving plate according to claim 1, wherein: Between the step (a1) and the step (a2), the following steps are further included: (a1-2) The movable plate and the mask metal film are passed between a pair of rollers facing each other and pressed with a strength value smaller than that in the step (a2) or the step (a3).

11. The method for manufacturing a laminate of a mask and a moving plate according to claim 3, wherein: Before the step (a2), the method further comprises the following steps: At least a portion of the second region of the mask metal film is lifted from the movable plate.

12. The method for manufacturing a laminate of a mask and a moving plate according to claim 4, wherein: Before the step (a3), the method further comprises the following steps: At least a portion of the first region of the mask metal film is lifted from the movable plate.

13. The method for manufacturing a laminate of a mask and a moving plate according to claim 1, wherein: In the step (a), the moving plate and the mask metal film are bonded by sandwiching a dry film resist layer.

14. The method for manufacturing a laminate of a mask and a movable plate according to claim 13, wherein: The mask pattern is formed by wet etching, and during the formation of the mask pattern, the dry film resist layer provides adhesion to prevent warping between the first surface of the mask metal film and the dry film resist layer.

15. The method for manufacturing a laminate of a mask and a moving plate according to claim 1, wherein: Before the step (a), the method further comprises the following steps: A notch portion is formed on the first surface of the mask metal film.

16. The method for manufacturing a laminate of a mask and a moving plate according to claim 3, wherein: After the step (a), the mask metal film is bonded to the moving plate in a state where it is stretched in the long-side direction and the short-side direction compared to the pre-designed area.

17. The method for manufacturing a laminate of a mask and a movable plate according to claim 16, wherein: The stretching amount is 0.001% to 0.05% of the length of the long side of the mask metal film.

18. The method for manufacturing a laminate of a mask and a movable plate according to claim 16, wherein: The stretching amount is at least greater than 10 μm and less than 100 μm.

19. A stacked body of a mask and a moving plate, manufactured according to the method for manufacturing a stacked body of a mask and a moving plate according to claim 1.

20. A laminate of a mask and a moving plate, the laminate of the mask and the moving plate being used to support a mask for forming OLED pixels and to correspond the mask to a frame, comprising: A moving plate, which is in the shape of a flat plate; a mask, which is bonded to the movable plate, including a first surface and a second surface facing the first surface, and having a plurality of mask patterns extending from the first surface to the second surface, The mask is bonded to the moving plate in a state of being stretched in comparison with a pre-designed area in the long-side direction and the short-side direction.

21. The stack of mask and moving plate according to claim 20, wherein: The mask is in a state of being further stretched toward two side surfaces or even four side surfaces in the pre-designed area.

22. The stack of mask and moving plate according to claim 21, wherein: The stretching amount is 0.001% to 0.05% of the length of the long side of the mask.

23. The stack of mask and moving plate according to claim 21, wherein: The stretching amount is at least greater than 10 μm and less than 100 μm.

24. The stack of mask and moving plate according to claim 20, wherein: A dry film resist layer is interposed between the movable plate and the mask, and the movable plate and the mask metal film are bonded together.

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