Sample processing device and sample processing method

Abstract

The invention provides a sample processing device and a sample processing method. The processing device comprises an electronic imaging unit, a focused ion beam, a gas generation unit, a sample fixing table and a nano-probe electrical property measurement unit. Wherein the sample fixing table is used for transferring a sample to a vacuum environment in the device; the nanoprobe electrical property measurement unit finds the failure position of the sample in combination with different modes of the electronic imaging unit; the sample is cut into a shape suitable for extraction by the focused ion beam and the etching gas sprayed by the gas generation unit; and the focused ion beam and the protective gas sprayed by the gas generation unit form an isolation coating on the target area. According to the sample processing device and the sample processing method provided by the invention, the morphology of the structure of the target area can be accurately searched and protected, and the test piece meeting the TEM analysis requirement can be more accurately produced on the basis of the original technology.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor sample preparation and detection, and in particular to a sample processing device and a sample processing method for failure analysis. Background Art

[0002] The existing failure analysis methods for semiconductor processes are mainly divided into three types: TEM, SEM and FIB. Before analysis, semiconductor samples must be prepared into a format that can be analyzed according to the provided hot spot position. Taking FIB as an example, the sample must use a high-energy ion beam to slowly advance the cross section, and then use SEM to take clear and high-resolution images of the target area and measure; and before TEM analysis, the semiconductor sample needs to be prepared into a thin slice using FIB, and its thickness varies from 10-200nm according to the needs. TEM uses a high-energy electron beam to irradiate and pass through this thin slice, collects transmitted electrons and some other electronic images, and can more clearly analyze the internal structure and chemical composition of the chip.

[0003] In the above common sample preparation process, it is impossible to accurately unify the failure position and the protection point of the semiconductor process, nor is it possible to accurately retain the calibrated defects or abnormal areas. Since the normal sample preparation process will cause the accumulation of gallium ions attached to the target structure and the backsplash of semiconductor materials, if you try to clean the cross section, it will almost certainly damage the target area, which will cause the appearance of the sample defects to change, or even the disappearance of small defects. Summary of the invention

[0004] In view of the above-mentioned shortcomings of the prior art, the present invention provides a sample processing device, which includes a nanoprobe electrical property measurement unit, an electronic imaging unit, a focused ion beam, a gas generation unit and a sample fixing table located in a vacuum chamber; wherein,

[0005] The sample fixing table is movable and used to fix the sample;

[0006] The nanoprobe electrical property measurement unit is used to measure the electrical characteristic curve of the sample;

[0007] The electronic imaging unit is used to determine the failure area in the sample according to the measurement result of the nanoprobe electrical property measurement unit;

[0008] The gas generating unit can spray protective gas and etching gas. The protective gas sprayed by the gas generating unit cooperates with the focused ion beam to form an insulating coating on the surface of the sample; the etching gas sprayed by the gas generating unit cooperates with the focused ion beam to cut out a part containing a failure area from the sample.

[0009] Optionally, the sample processing device also includes a robot.

[0010] The present invention also provides a sample processing method, comprising the following steps:

[0011] The sample fixing table with the sample fixed thereon is sent into the vacuum chamber, and the electrical curve of the sample is measured by the nanoprobe electrical property measurement unit. After an abnormality is found, the location of the failure area of ​​the sample is determined by using the measurement mode of the electronic imaging unit;

[0012] The focused ion beam is used in conjunction with the etching gas ejected from the gas generating unit to gradually bombard and etch the surface of the sample, so that a first incision is formed on the surface of the sample to form a first section that exposes the internal failure area;

[0013] The focused ion beam is used in conjunction with the etching gas ejected from the gas generating unit to gradually bombard and etch the sample surface, so that a second incision symmetrical to the first incision is formed on the sample surface to form a second section exposing the internal failure area, thereby forming a vertical thick slice including the failure area.

[0014] Optionally, forming a first incision on the sample surface includes forming a first wedge-shaped incision on the upper surface of the sample, the first wedge-shaped incision includes a first vertical section and a first oblique section, the bottom edges of the first vertical section and the first oblique section are connected; the first vertical section cuts the failure area to form the first section.

[0015] Optionally, the method further includes the following steps:

[0016] Using a focused ion beam in conjunction with protective gas ejected from a gas generating unit, an insulating coating is formed on the first vertical section;

[0017] A protective layer is formed on the upper surface of the sample by using a focused ion beam in combination with protective gas ejected from a gas generating unit, so that the projection of the failure area on the horizontal plane is located inside the projection of the protective layer on the horizontal plane.

[0018] Optionally, the edge of the isolation coating is expanded by 1.5-3 μm in the vertical direction and by 0.5-2 μm in the horizontal direction compared to the edge of the first section of the exposed failure area.

[0019] Optionally, forming a second incision symmetrical to the first incision on the sample surface includes forming a second wedge-shaped incision symmetrical to the first wedge-shaped incision on the sample surface, the second wedge-shaped incision includes a second vertical section and a second oblique section, and the bottom edges of the second vertical section and the second oblique section are connected; the second vertical section cuts the failure area to form the second section.

[0020] Optionally, the tip of the manipulator is fixed on the top of the vertical thick slice by using the focused ion beam and the protective gas sprayed by the gas generating unit, the connection between the vertical thick slice and the sample is cut off by using the focused ion beam, the vertical thick slice is carried away from the sample fixing table by the manipulator, and then the sample fixed on the sample fixing table is removed;

[0021] Fix the half-divided grid on the sample fixing table, and let the manipulator carry the vertical thick slice back to the top of the sample fixing table so that the bottom of the vertical thick slice is in virtual contact with the half-divided grid; with the cooperation of the focused ion beam and the protective gas sprayed by the gas generating unit, the bottom of the vertical thick slice is fixedly connected to the half-divided grid, and then cut off the connection between the manipulator and the vertical thick slice.

[0022] Optionally, the method further includes the following steps:

[0023] The insulating coating of the first section is peeled off to a transparent level by using a focused ion beam and an etching gas ejected from a gas generating unit;

[0024] The surface where the second section is located is etched and thinned by using a focused ion beam and etching gas sprayed from a gas generating unit, and the vertical thick slice is thinned to a level that can be used for observation.

[0025] Optionally, the three-dimensional dimensions of the vertical slab are: length 10-20 μm, width 1-3 μm, height 5-10 μm.

[0026] As described above, the present invention provides a sample processing device and a sample processing method, wherein the sample processing device has both electrical property measurement functions, and its imaging unit can switch between measurement and positioning, without the risk of failure point offset. By using protective gas and a focused electron beam, an isolation coating is added to the cross section of the failure area before sample preparation begins, so that the required structural appearance can be protected from any deformation during the sample preparation process, thereby eliminating the risk of defect disappearance. Moreover, the isolation coating forms an angle difference in the target failure area, which has a marking effect. The thickness of the current residual test piece can be accurately judged according to the gradual change of the coating adhesion condition, which is conducive to TEM shooting and analysis. The sample processing device provided by the present invention can accurately protect the morphology of the target area structure, and can more accurately produce test pieces that meet the TEM analysis requirements on the basis of the original technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Shown is a schematic structural diagram of a sample processing device in Embodiment 1 of the present invention.

[0028] Figure 2 It is a schematic diagram of the measurement in step S1 of the second embodiment of the present invention.

[0029] Figure 3It is a schematic diagram showing the formation of a first wedge-shaped cut in step S2 of the second embodiment of the present invention.

[0030] Figure 4 It is a schematic diagram showing the deposition of an isolation coating layer in step S3 of the second embodiment of the present invention.

[0031] Figure 5 It is a schematic diagram showing the deposition of a protective layer in step S4 of the second embodiment of the present invention.

[0032] Figure 6 It is a schematic diagram showing the cutting of the vertical thick slice in step S5 of the second embodiment of the present invention.

[0033] Figure 7 It is a schematic diagram showing the connection between the vertical thick sheet and the half-divided grid in step S6 of the second embodiment of the present invention.

[0034] Figure 8 It is a schematic diagram showing thinning of the isolation coating layer in step S7 of the second embodiment of the present invention.

[0035] Fig. 9 It is a schematic diagram showing the step S7 of moving the test piece out of the sample fixing table in the second embodiment of the present invention.

[0036] Component number description

[0037] Sample-2; failure area-21; vertical thick slice-22; probe-161; isolation coating-211; half-divided grid-3; protective layer-212; backsplash layer-213; test piece-221; electronic imaging unit-11; focused ion beam-12; gas generation unit-13; manipulator-14; sample fixing table-15; nanoprobe electrical property measurement unit-16. DETAILED DESCRIPTION

[0038] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0039] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0040] For ease of description, spatial relational terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatial relational terms are intended to include other directions of the device in use or operation in addition to the directions depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or there can be one or more intervening layers. As used herein, "between..." means including the end point values.

[0041] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0042] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0043] Embodiment 1

[0044] like Figure 1-9 As shown, this embodiment provides a sample processing device for measuring and analyzing the electrical properties of a sample containing defects, and completely retaining the defective area inside the sample in the final test piece. The sample processing device includes an electronic imaging unit 11, a focused ion beam 12, a gas generating unit 13, a manipulator 14, a sample fixing table 15, and a nanoprobe electrical property measurement unit 16; wherein:

[0045] The sample fixing table 15 is used to fix the sample 2 and transfer the sample 2 to the vacuum chamber inside the device. The sample is usually a semiconductor chip, and there is a failure area 21 inside the chip. The failure area 21 includes structural abnormalities or defects and needs to be analyzed for failure. The sample processing device of this embodiment is used to cut the sample and extract the failure area 21 separately for detection and analysis. The failure area 21 needs to be made of hard material and its morphology cannot change.

[0046] The nanoprobe electrical measurement unit 16 includes a probe 161, which receives a signal and measures the electrical characteristic curve of the sample, and combines different modes of the electronic imaging unit 11 to locate the failure area 21 in the sample 2. In this embodiment, the nanoprobe electrical measurement unit 16 is combined with a SEM high-magnification electronic imaging device to achieve a measurement process accuracy of 7nm.

[0047] The gas generating unit 13 can spray protective gas or etching gas. As an embodiment, the gas generating unit 13 can be a gas injection system (GIS), that is, a physical sputtering method combined with a chemical gas reaction can selectively remove a certain type of material or deposit materials. The process of material deposition is that the ion beam or electron beam decomposes the gas molecules adsorbed on the surface of the sample into a volatile part and a non-volatile part. The volatile part is extracted by the vacuum system, and the non-volatile part is deposited at the position irradiated by the ion beam or electron beam to form a thin film deposition. Common thin film layers include Pt thin film, SiO thin film, W film and C film. By depositing one or more protective layers, it can be avoided that the ion beam causes damage to the sample surface during subsequent cutting.

[0048] More specifically, the protective gas sprayed by the gas generating unit 13 cooperates with the focused ion beam to form an insulating coating 211 on the cross-section of the failure area 121 of the sample 2. The edge of the insulating coating 211 expands 1.5-3μm in the vertical direction and 0.5-2μm in the horizontal direction compared to the cross-section edge of the exposed failure area 21, so as to ensure that the cross-section can be completely covered for protection; the etching gas sprayed by the gas generating unit 13 cooperates with the focused ion beam to cut the sample 2 into a shape suitable for extraction, for example, a vertical thick slice, the vertical thick slice includes the failure area 121, and the suitable three-dimensional dimensions of the vertical thick slice are: length 10-20μm, width 1-3μm, height 5-10μm.

[0049] The manipulator 14 is used to transfer the sample and fix it on the half-grid 3. The manipulator 14 is preferably a nanometer-level manipulator to improve the operation accuracy and complete fine movements.

[0050] In addition to cooperating with the gas generating unit 13 for etching, the focused ion beam 12 is also used to thin the vertical thick slice to a thickness that meets the requirements of TEM analysis, such as thinning to 60nm-100nm, and to clean up the accumulation on the sample surface caused by the entire process.

[0051] Embodiment 2

[0052] like Figures 2 to 9 As shown, based on the sample processing device in Example 1, this embodiment provides a sample processing method for TEM failure analysis, comprising the following steps:

[0053] S1: Please refer to Figure 2 , the sample fixing table 15 with the sample 2 fixed thereon is sent into the vacuum chamber, the nanoprobe electrical property measurement unit 16 extends the probe 161 to touch the contact layer of the sample 2, transmits an electrical signal and measures the electrical property curve of the sample 2, and after finding any abnormality, switches the electronic imaging unit 11 to the measurement mode to confirm the location of the failure area 21 of the sample 2.

[0054] S2: Please refer to Figure 3 , using a focused ion beam 12 (FIB, such as a gallium ion beam) in conjunction with an etching gas (such as XeF2, used for etching silicon, silicon oxide, etc.) ejected from a gas generating unit 13, the surface of the sample 2 is gradually bombarded and etched, so that a cut is formed on the surface of the sample 2 to reveal the internal failure area 21. Then, the current level used by the focused ion beam 12 is reduced, and the target area where the failure area 21 is located is cleaned until a morphology that meets the requirements of failure analysis is reached.

[0055] More specifically, step S2 forms a first wedge-shaped cut on the upper surface of sample 2, the first wedge-shaped cut includes a first vertical section and a first oblique section, the bottom edges of the first vertical section and the first oblique section are connected; the first vertical section can cut open the failure area 21 and form a first section, and the first section can reveal the failure area 21.

[0056] Next, proceed to step S3: Please refer to Figure 4 , adjust the direction of the gas generating unit 13 and the focused ion beam so that the protective gas (e.g. C 10 H8, C8H8, used for depositing carbon film) and the electrons emitted by the focused ion beam 12 all reach the first vertical section, and the protective gas combines with the electrons to form an isolation coating 211 that isolates the ion from splashing back.

[0057] More specifically, the edge of the isolation coating 211 formed in step S3 expands 1.5-3 μm in the vertical direction and 0.5-2 μm in the horizontal direction compared to the first section edge of the exposed failure area 21 to cover a larger area and ensure complete coverage of the section.

[0058] Next, proceed to step S4: Please refer to Figure 5 , adjust the direction of the gas generating unit 13 and the focused ion beam, so that the protective gas ejected by the focused ion beam 12 and the gas generating unit 13 forms a protective layer 212 on the upper surface of the sample 2, so that the projection of the failure area 21 on the horizontal plane is located inside the projection of the protective layer 212 on the horizontal plane, so as to ensure that the target area where the failure area 21 is located will not be damaged by the ions transmitted from the surface of the sample 2. In this process, it is inevitable that a backsplash layer 213 is synchronously formed on the periphery of the isolation coating 211. The backsplash layer 213 and the protective layer 212 are synchronously formed and have the same material composition. More specifically, the backsplash layer 213 covers the first vertical section between the upper edge of the isolation coating 211 and the protective layer 212.

[0059] Next, the sample fixing table 15 is rotated along the vertical axis to push the sample 2 from another direction. Similar to step S2, a focused ion beam 12 (such as a gallium ion beam) is used in conjunction with the etching gas ejected by the gas generating unit 13 to form a second wedge-shaped cut symmetrical to the first wedge-shaped cut on the surface of the sample 2, forming a vertical thick sheet 22 including the failure area 21, where only the bottom of the vertical thick sheet 22 is connected to the sample 2. Suitable three-dimensional dimensions of the vertical thick sheet are: length 10-20 μm, width 1-3 μm, height 5-10 μm.

[0060] The second wedge-shaped cut includes a second vertical cut surface and a second oblique cut surface. The second vertical cut surface can cut open the failure region 21 and form a second section. The second section can reveal the failure region 21 .

[0061] Next, proceed to step S5: Please refer to Figure 6 , control the nano-scale manipulator 14 to extend into the vacuum chamber, and with the cooperation of the focused ion beam 12 and the protective gas sprayed by the gas generating unit 13, fix the tip of the nano-scale manipulator 14 on the top of the vertical thick sheet 22, and use the focused ion beam 12 to cut off the connection between the vertical thick sheet 22 and the sample 2, and then make the nano-scale manipulator 14 carry the vertical thick sheet 22 away from the sample fixing table 15 to avoid obstruction, and then remove the sample 2 clamped on the sample fixing table 15.

[0062] Next, proceed to step S6: Please refer to Figure 7 , clamp the half-grid 3 of a material that will not cause elemental composition conflict in EDS analysis on the sample fixing table 15, let the nano-scale manipulator 14 carry the vertical thick slice 22 back to the top of the sample fixing table 15, and let the bottom of the vertical thick slice 22 connected by the nano-scale manipulator 14 virtually touch the half-grid 3 cut to a suitable angle;

[0063] Then, with the cooperation of the focused ion beam 12 and the protective gas sprayed by the gas generating unit 13, the connection between the bottom end of the vertical thick sheet 22 and the half-divided grid 3 is fixed, the connection between the nano-scale manipulator 14 and the vertical thick sheet 22 is cut off, the sample fixing table 15 is rotated, and the above operation is repeated in all directions to fix the vertical thick sheet 22 and the half-divided grid 3 in contact in all directions, so that the vertical thick sheet 22 is completely fixed in the vertical direction.

[0064] Next, proceed to step S7: Please refer to Figure 8-Figure 9, the focused ion beam 12 applies a relatively small current gear, and in cooperation with the etching gas sprayed by the gas generating unit 13, slowly pushes the sample fixing table 15 from one side, so that the first section of the failure area 21 in the vertical thick slice 22 contacts the etching ion beam. Due to the angle problem of the etching ion spraying, the vertical thick slice 22 must have a difference in the degree of advancement in the longitudinal direction. The advancement degree is controlled, and the etching ion beam is first made to fall on the bottom of the isolation coating 211, and then gradually etches the upper area of ​​the isolation coating 211. When the etching ion beam falls on the junction of the isolation coating 211 and the backsplash layer 213, it can be considered that the entire area of ​​the isolation coating 211 is completely peeled off, that is, the isolation coating 211 is thinned to a transparent degree, which does not affect the normal shooting of the internal failure area. This process needs to thin the isolation coating 211 to a very small thickness as much as possible without causing damage to the sample.

[0065] Then, the sample fixing table 15 is pushed in from the other side, and the surface where the second section is located is etched and thinned, and the vertical thick slice 22 is thinned to a degree that can be used for observation, for example, thinned to 60nm-100nm, so as to meet the preparation standard for TEM observation, and then the processed test slice 221 is moved out of the sample fixing table 15 to complete the preparation process.

[0066] In summary, the present invention provides a sample processing device and a sample processing method, wherein the processing device includes an electronic imaging unit, a focused ion beam, a gas generating unit, a manipulator, a sample fixing table, and a nanoprobe electrical property measurement unit located in a vacuum environment. The sample fixing table is used to carry and transfer the sample to the vacuum environment inside the device; the nanoprobe electrical property measurement unit extends a probe to access the signal and measure the electrical characteristic curve, and finds the failure position of the sample in combination with the different modes of the electronic imaging unit; the etching gas sprayed by the focused ion beam and the gas generating unit cuts the sample into a shape suitable for extraction; the protective gas sprayed by the focused ion beam and the gas generating unit forms a coating on the target area; the manipulator transfers and fixes the thick slice including the target failure area to the column of the half-divided grid; the focused ion beam thins the sample until the thickness meets the requirements of TEM analysis, and cleans the accumulation on the sample surface caused by the entire process. The high-precision TEM sample processing device provided by the present invention can accurately find and protect the morphology of the target area structure, and can more accurately produce test slices that meet the requirements of TEM analysis on the basis of the original technology.

[0067] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A sample processing device, characterized in that: The sample processing device includes a nanoprobe electrical property measurement unit, an electronic imaging unit, a focused ion beam, a gas generation unit and a sample fixing table located in a vacuum chamber; wherein, The sample fixing table is movable and used to fix the sample; The nanoprobe electrical property measurement unit is used to measure the electrical characteristic curve of the sample; The electronic imaging unit is used to determine the failure area in the sample according to the measurement result of the nanoprobe electrical property measurement unit; The gas generating unit can spray protective gas and etching gas. The protective gas sprayed by the gas generating unit cooperates with the focused ion beam to form an insulating coating on the surface of the sample; the etching gas sprayed by the gas generating unit cooperates with the focused ion beam to cut out a part containing a failure area from the sample.

2. The sample processing device according to claim 1, characterized in that: The sample processing device also includes a robot.

3. A sample processing method, characterized in that: The steps include: The sample fixing table with the sample fixed thereon is sent into the vacuum chamber, and the electrical curve of the sample is measured by the nanoprobe electrical property measurement unit. After an abnormality is found, the location of the failure area of ​​the sample is determined by using the measurement mode of the electronic imaging unit; The focused ion beam is used in conjunction with the etching gas ejected from the gas generating unit to gradually bombard and etch the surface of the sample, so that a first incision is formed on the surface of the sample to form a first section that exposes the internal failure area; The focused ion beam is used in conjunction with the etching gas ejected from the gas generating unit to gradually bombard and etch the sample surface, so that a second incision symmetrical to the first incision is formed on the sample surface to form a second section exposing the internal failure area, thereby forming a vertical thick slice including the failure area.

4. The sample processing method according to claim 3, characterized in that: The step of forming the first cut on the sample surface includes forming a first wedge-shaped cut on the upper surface of the sample, wherein the first wedge-shaped cut includes a first vertical section and a first oblique section, wherein the bottom edges of the first vertical section and the first oblique section are connected; and the first vertical section cuts through the failure area to form the first section.

5. The sample processing method according to claim 4, characterized in that: The following steps are also included: Using a focused ion beam in conjunction with protective gas ejected from a gas generating unit, an insulating coating is formed on the first vertical section; A protective layer is formed on the upper surface of the sample by using a focused ion beam in combination with protective gas ejected from a gas generating unit, so that the projection of the failure area on the horizontal plane is located inside the projection of the protective layer on the horizontal plane.

6. The sample processing method according to claim 5, characterized in that: The edge of the isolation coating is expanded by 1.5-3 μm in the vertical direction and 0.5-2 μm in the horizontal direction compared to the edge of the first section of the exposed failure area.

7. The sample processing method according to claim 3, characterized in that: Also includes: The method of forming a second incision symmetrical to the first incision on the sample surface includes forming a second wedge-shaped incision symmetrical to the first wedge-shaped incision on the sample surface, the second wedge-shaped incision includes a second vertical section and a second oblique section, and the bottom edges of the second vertical section and the second oblique section are connected; the second vertical section cuts through the failure area to form the second section.

8. The sample processing method according to claim 3, characterized in that: The following steps are also included: Using the focused ion beam and the protective gas sprayed by the gas generation unit, the tip of the manipulator is fixed on the top of the vertical thick slice, the focused ion beam is used to cut off the connection between the vertical thick slice and the sample, the manipulator is used to carry the vertical thick slice away from the sample fixing table, and then the sample fixed on the sample fixing table is removed; Fix the half-divided grid on the sample fixing table, and let the manipulator carry the vertical thick slice back to the top of the sample fixing table so that the bottom of the vertical thick slice is in virtual contact with the half-divided grid; with the cooperation of the focused ion beam and the protective gas sprayed by the gas generating unit, the bottom of the vertical thick slice is fixedly connected to the half-divided grid, and then cut off the connection between the manipulator and the vertical thick slice.

9. The sample processing method according to claim 3, characterized in that: The following steps are also included: The insulating coating of the first section is peeled off to a transparent level by using a focused ion beam and an etching gas ejected from a gas generating unit; The surface where the second section is located is etched and thinned by using a focused ion beam and etching gas sprayed from a gas generating unit, and the vertical thick slice is thinned to a level that can be used for observation.

10. The sample processing method according to claim 3, characterized in that: The three-dimensional dimensions of the vertical slab are: length 10-20 μm, width 1-3 μm, height 5-10 μm.

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