Radiator based on semiconductor heat dissipation technology

Abstract

The invention discloses a heat radiator based on a semiconductor heat radiation technology, which belongs to the field of heat radiators, and comprises a thermocouple circuit which comprises a first metal electrode, a second metal electrode, an N-type semiconductor and a P-type semiconductor, and the first metal electrode and the second metal electrode are respectively arranged at the two ends of the N-type semiconductor and the P-type semiconductor; the energy levels of the first metal electrode and the second metal electrode are higher than the electron energy level in the P-type semiconductor, and the energy levels of the first metal electrode and the second metal electrode are lower than the electron energy level in the N-type semiconductor; the hot plate is in contact with the first metal electrode to transfer heat, the hot plate comprises a cooling liquid balance plate, a splitter plate, spoilers and spoiler columns, the splitter plate is located at the water injection port, the cooling liquid balance plate is located behind the splitter plate, a plurality of first spoilers and second spoilers are arranged in a flow channel, and the first flow channel and the second flow channel are provided with the cooling liquid balance plate; and the fin layer is in contact with the hot plate to dissipate heat. The radiator can improve the radiating effect.

Description

Technical Field

[0001] The invention belongs to the field of radiators, and more specifically, relates to a radiator based on semiconductor heat dissipation technology. Background Art

[0002] With the development trend of miniaturization and high performance of electronic equipment, the chip integration requirements are getting higher and higher, and the heat flux density of the chip during operation is also increasing. If the heat generated by the power chip cannot be dissipated in time, the equipment will work under high temperature conditions for a long time, which will directly affect the working life of the device and even fail directly. As the temperature rises, the reliability and mean failure time of electronic equipment drop sharply, and its failure probability shows an exponential growth trend. Summary of the invention

[0003] To solve the above problems, the present invention provides a radiator based on semiconductor heat dissipation technology. The micro semiconductor refrigerator based on this technology does not completely replace the traditional air-cooling and water-cooling heat dissipation systems, but is combined with them to achieve heat dissipation, thereby raising the upper limit of the cooling power of the heat dissipation system.

[0004] The present invention adopts the following technical solution: A radiator based on semiconductor heat dissipation technology, comprising: A thermocouple circuit comprises a first metal electrode, a second metal electrode, an N-type semiconductor and a P-type semiconductor, wherein the first metal electrode and the second metal electrode are respectively arranged at two ends of the N-type semiconductor and the P-type semiconductor, and the second metal electrode is used for heat transfer with a chip to be dissipated; the energy levels of the first metal electrode and the second metal electrode are higher than the energy levels of electrons in the P-type semiconductor, and the energy levels of the first metal electrode and the second metal electrode are lower than the energy levels of electrons in the N-type semiconductor; the electrons flow in the order of the first metal electrode, the P-type semiconductor, the second metal electrode, and the N-type semiconductor; the electrons release energy to the surroundings when they flow to the P-type semiconductor via the first metal electrode; the electrons absorb heat from the surroundings when they flow to the second metal electrode via the P-type semiconductor; the electrons release energy to the surroundings when they flow to the first metal electrode via the N-type semiconductor; and the electrons absorb heat from the surroundings when they flow to the N-type semiconductor from the second metal electrode; a hot plate in contact with the first metal electrode for heat transfer; The fin layer contacts the heat plate to dissipate heat.

[0005] Furthermore, the fin layer includes a plurality of fin groups arranged at intervals, each fin group includes a plurality of forward serrated fins and a plurality of reverse serrated fins, and the plurality of forward serrated fins and the plurality of reverse serrated fins are stacked alternately.

[0006] Furthermore, the thickness of the forward serrated fin and the reverse serrated fin are both 2 mm, and the forward serrated fin and the reverse serrated fin are bent once after 4 mm, with a bending angle of 90°; the spacing between adjacent fin groups is 8 mm.

[0007] Furthermore, a sandblasting layer is provided on the surface of the forward serrated fin and the reverse serrated fin, and the sandblasting layer is one of silicon carbide, corundum, brown corundum, mullite sand and alumina.

[0008] Further, the hot plate comprises: A plate body, wherein opposite sides of the plate body are respectively provided with a water inlet and a water outlet for respectively flowing in or out of the cooling liquid; a flow channel connecting the water inlet and the water outlet is provided inside the plate body; A splitter plate, arranged in the flow channel and close to the water injection port, the splitter plate is used to split the coolant into three parts: upper, middle and lower parts; The coolant flow rate balancing plate is arranged at the rear side of the diverter plate and is used to distribute the flow so that the coolant flow rates on the left and right sides after diversion are balanced and the coolant flow rate is uniform; The spoiler is arranged at the rear side of the coolant flow velocity balance plate to disturb the flow state of the coolant and improve the turbulence effect; The spoiler column is arranged at the rear side of the spoiler plate to disturb the flow state of the coolant.

[0009] Furthermore, the flow channel includes a first flow channel, a second flow channel and a third flow channel arranged in parallel, the first flow channel, the second flow channel and the third flow channel are connected end to end, the first flow channel is connected to the water inlet, and the third flow channel is connected to the water outlet; The splitter plate is located in the first flow channel, and two prism-shaped spoiler columns are arranged on the splitter plate at intervals. The prism-shaped spoiler columns divide the passing coolant into two directions of flow, upper and lower, so as to disturb the flow state of the coolant and increase the heat dissipation capacity; The coolant flow rate balancing plate is V-shaped, the middle part of which is rotatably mounted on the central column on the first flow channel, and the water-facing surface of the coolant flow rate balancing plate is provided with a plurality of L-shaped pin fins; The spoiler comprises a plurality of first spoilers and a plurality of second spoilers which are arranged alternately. The length of the second spoiler is smaller than that of the first spoiler, and two second spoilers are arranged side by side with a gap between them.

[0010] Furthermore, the heat sink based on semiconductor heat dissipation technology also includes: The isolation layer is arranged between the thermocouple circuit and the hot plate. The isolation layer is made of one of silicon oxide, silicon nitride and aluminum oxide, and has a thickness of 0.5-0.8 mm.

[0011] Furthermore, the heat sink based on semiconductor heat dissipation technology also includes: The aluminum oxide film is arranged on the second metal electrode and is used for heat transfer with the chip. The thickness is 0.8-1 mm. The aluminum oxide film is an aluminum oxide quantum dot film, and the diameter of the quantum dot is 1-20 nm.

[0012] Furthermore, the heat sink based on semiconductor heat dissipation technology also includes: The thermal conductive silicone grease layer fills the gap between the fin layer and the heat plate. The thermal conductive silicone grease layer has a thickness of 0.5-0.7 mm and is doped with silicone oil, boron nitride, silicon carbide, silicon dioxide, iron octanoate, and cyclopentaneate.

[0013] Furthermore, the N-type semiconductor and the P-type semiconductor are respectively arranged on both sides of the surface of the first metal electrode, the N-type semiconductor is doped with one of phosphorus, arsenic, and antimony, the thickness is 0.9 mm to 1.1 mm, the width is 1.8 to 2 mm, and the doping concentration is 5×10 18 cm -3 ~5×10 19 cm -3 The P-type semiconductor doping material is one of silicon carbide, gallium nitride, and gallium arsenide, with a thickness of 0.9 mm to 1.1 mm and a doping concentration of 1×10 15 cm -3 ~5×10 16 cm -3 .

[0014] Beneficial effects: The present invention adopts the above technical solution, which has the advantages of scientific and reasonable structure, good heat dissipation effect, energy saving, etc., as follows: 1. A heat sink based on semiconductor heat dissipation technology disclosed in the present invention includes a thermocouple circuit. In the thermocouple circuit, the P-type semiconductor doping material is one of silicon carbide, gallium nitride, and gallium arsenide, with a thickness of 0.9 mm to 1.1 mm and a doping concentration of 1×10 15 cm -3 ~5×10 16 cm -3 , N-type semiconductor doped with one of phosphorus, arsenic, and antimony, with a thickness of 0.9 mm to 1.1 mm and a doping concentration of 5×10 18 cm -3 ~5×10 19 cm -3. The higher doping concentration of N-type semiconductor increases the energy level of electrons, thereby absorbing higher energy. The first metal electrode can be made of copper, aluminum, or silver, with a thickness of 0.8 to 0.9 mm. In the thermocouple circuit, the current flows through the P-type semiconductor. Since the energy level of the electrons in the first metal electrode is higher than that of the electrons in the P-type semiconductor, the electrons release energy to the surrounding at the joint when the electrons flow through the first metal electrode to the P-type semiconductor. Under the action of the power supply, the electrons move in a directional manner. When the electrons flow from the P-type semiconductor to the second metal electrode, since the energy level of the electrons in the P-type semiconductor is lower than that of the electrons in the second metal electrode, at the joint between the P-type semiconductor and the second metal electrode, the electrons absorb heat from the surrounding and transition to a high energy level. When the electrons flow from the second metal electrode to the N-type semiconductor, since the energy level of the electrons in the N-type semiconductor is higher than that of the electrons in the second metal electrode, the electrons absorb heat. When the current flows from the N-type semiconductor to the first metal electrode, the electrons transition to a low energy level and release energy. In the thermocouple circuit, the second metal electrode forms a cold end, and the first metal electrode forms a hot end. When the temperature difference between the two ends is 0, the second metal electrode transfers heat to the chip through a layer of aluminum oxide film at room temperature. According to Fourier's Law When the chip is working, the temperature of the heat source surface is 350K, and the temperature gradient between the chip and the metal below is about 60381.83K / m. If the metal electrode is made of aluminum, its thermal conductivity is 237W / (m•K), and the heat flux density q is 148827.8282W / m 2 , for the cold end cooling capacity , at room temperature {Q}_{c}={T}_{source}\times [1+0.0042({T}_{h}-27)] The maximum cooling capacity of the cold end is 62.12W, and the heat flux density is about 621200W / m 2 . It is much larger than the heat transmitted by the chip, so the second metal electrode cold end can well absorb the heat released by the chip.

[0015] 2. A heat sink based on semiconductor heat dissipation technology disclosed in the present invention includes an aluminum oxide film and an isolation layer. The aluminum oxide film has high transparency, high bandgap width, and high dielectric constant. It serves as a passivation layer to cover the thermocouple circuit. The high bandgap width prevents electrons in the valence band of aluminum oxide from jumping to the conduction band, so that the aluminum oxide film has a higher impedance, providing a stable working environment for the thermocouple circuit.

[0016] 3. The heat sink with controllable heat dissipation capacity disclosed in the present invention includes a heat plate, which is arranged below the isolation layer. The heat plate adopts an anodizing process to form an oxide film on the aluminum surface. Aluminum oxide has a very high resistivity, which makes it insulated to avoid circuit short circuits, and can fill the tiny gaps between electronic components and the heat sink to form a continuous heat conduction path, thereby improving the heat conduction efficiency. At the same time, compared with ordinary metal materials, it has higher heat dissipation. Two baffles are arranged in the heat plate, and the flow channel between the water inlet and the water outlet is adjusted to an S shape, which significantly increases the Reynolds number while increasing the coolant flow path length and the convection heat transfer coefficient. The coolant has more time to contact the heat dissipation surface for heat transfer; secondly, the S-shaped flow channel makes the fluid flow more evenly in the flow channel, reduces the flow dead zone, and improves the heat dissipation capacity. The flow channel is a rectangular flow channel. The pressure drop of the rectangular cross-section flow channel is 731 Pa. Compared with the elliptical cross-section flow channel, the pressure drop is reduced by 15%, which effectively reduces the process loss and improves the economy of the cooling system. When the coolant mass flow rate increases from 0.005 kg / s to 0.030 kg / s, the maximum temperature T max It dropped from 311.98 K to 304.24 K, a decrease of 7.74°C; the temperature difference ∆T dropped from 9.96°C to 3.62°C, a decrease of 6.34°C, with a decrease rate of 63.65%.

[0017] 4. A radiator based on semiconductor heat dissipation technology disclosed in the present invention includes a diverter plate and a prism-shaped spoiler column. The diverter plate disturbs the coolant and diverts the coolant into three parts: upper, middle and lower parts. There is a prism-shaped diverter column in the diverter plate. The coolant at the top moves upward and downward along both sides of the prism-shaped diverter column, respectively. The coolant flowing upward collides with the inner wall, and the coolant flowing downward meets the coolant in the middle, disturbing the flow state of the coolant. Similarly, the coolant at the bottom moves upward and downward along both sides of the prism-shaped diverter column, respectively. The coolant flowing downward collides with the inner wall, and the coolant flowing upward meets the coolant in the middle, disturbing the flow state of the coolant, reducing the high / low temperature areas on the heat exchange surface of the microchannel radiator, reducing the temperature gradient along the flow direction, making the temperature distribution on the heat dissipation surface uniform, reducing the generation of thermal stress, and improving the cooling efficiency and system stability to a certain extent, and increasing the heat dissipation capacity.

[0018] 5. A radiator based on semiconductor heat dissipation technology disclosed in the present invention includes a coolant flow rate balancing plate, an L-shaped pin fin, a first spoiler, a second spoiler, a first rectangular parallelepiped diverter column and a second rectangular parallelepiped diverter column. A coolant flow rate balancing plate is arranged behind the diverter plate, so that the flow rates of the coolant on the left and right sides after the diversion are balanced, and an L-shaped pin fin is arranged on the surface of the coolant flow rate balancing plate. The structure increases the degree of disturbance to the coolant, destroys the boundary layer, thereby increasing the turbulence of the coolant, improving the heat transfer efficiency of the coolant, and playing a good supporting role. A first spoiler is arranged in the middle of the flow channel, which is 8mm long and 13mm high. A first rectangular parallelepiped diverter column is arranged in the first spoiler, which is 6mm long and 6mm long. The second spoiler is 18mm long and 13mm high. A second rectangular parallelepiped diverter column is arranged in the second spoiler, which is 18mm long. The first spoiler and the second spoiler are alternately distributed, with an interval of 5~7mm. The first spoiler and the second spoiler are arranged in the flow channel, which not only increases the heat transfer area between the hot plate surface and the coolant, but also disturbs the flow state of the coolant, increases the Reynolds number, causes the flow to change from a laminar state to a turbulent state, and improves the heat transfer efficiency; the length of the first spoiler and the second spoiler reduces the flow channel gap, so that the overall flow velocity of the coolant in the flow channel is higher, which can improve the heat dissipation efficiency of the radiator.

[0019] 6. A heat sink based on semiconductor heat dissipation technology disclosed in the present invention includes a thermal grease layer, which fills the gaps and uneven areas between the fins and the heat plate, reducing the air thermal resistance and thus optimizing heat transfer; secondly, the thermal grease can quickly transfer the heat of the heat plate to the fin group below, reducing the bottom temperature of the heat plate, increasing the temperature gradient of the heat plate, and thereby improving the heat conduction efficiency.

[0020] 7. A heat sink based on semiconductor heat dissipation technology disclosed in the present invention includes a fin group, a forward serrated fin is installed under the thermal grease layer, the forward serrated fin and the reverse serrated fin are staggered and stacked, the thickness of the forward serrated fin and the reverse serrated fin is 2mm, the forward serrated fin and the reverse serrated fin are bent once after 4mm, and the angle is 90°. The spacing between the first serrated fin group, the second serrated fin group, the third serrated fin group, the fourth serrated fin group and the fifth serrated fin group is 8mm, and the staggered stacking structure increases the contact area with the air. The heat transfer coefficient of the serrated fin is increased by 30% compared with the traditional fin; the fin group is cut in the gas flow direction and staggered a certain distance perpendicular to the flow direction, so that the fin group has a strong fluid mixing effect in the gas flow direction and perpendicular to the flow direction, which helps to improve the uniformity of the flow, improve the heat exchange efficiency, and effectively transfer the excess heat of the heat plate into the air. The fin group is a detachable fin. When the heat dissipation capacity is surplus, it can be disassembled to save space.

[0021] 8. A heat sink based on semiconductor heat dissipation technology disclosed in the present invention includes a sandblasting layer. The sandblasting layer material is one of silicon carbide, corundum, brown corundum, mullite sand, and alumina. Sandblasting can increase the roughness of the fin surface, which is beneficial to destroy the boundary layer of fluid flow and increase the turbulence of the boundary layer. In addition, sandblasting increases the contact area between the fin and the surrounding fluid and increases the heat conduction area. At the same time, the sandblasting layer is an anti-corrosion measure to reduce the performance degradation of the fin caused by corrosion, and further increase the service life of the fin. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A side schematic diagram of a heat sink based on semiconductor heat dissipation technology disclosed in an embodiment of the present invention; Figure 2 for Figure 1 A three-dimensional schematic diagram of a heat sink based on semiconductor heat dissipation technology.

[0023] In the figure: 1, sandblasting layer; 2, fin group; 201, forward serrated fin; 202, reverse serrated fin; 203, first serrated fin group; 204, second serrated fin group; 205, third serrated fin group; 206, fourth serrated fin group; 207, fifth serrated fin group; 208, air flow channel; 3, thermal grease layer; 4, hot plate; 401, filter; 402, baffle; 403, first spoiler; 404, first rectangular parallelepiped diverter column; 405, first Two spoilers; 406, second rectangular diverter column; 407, spoiler column; 408, diverter plate; 409, prism diverter column; 410, water inlet; 411, water outlet; 412, coolant flow rate balance plate; 413, L-shaped pin fins; 414, center column; 5, vapor deposition layer; 6, isolation layer; 7, thermocouple circuit; 701, first metal electrode; 702, N-type semiconductor; 703, P-type semiconductor; 704, second metal electrode; 8, aluminum oxide film. DETAILED DESCRIPTION

[0024] The present invention is further described below in conjunction with specific embodiments and drawings.

[0025] The examples described in the present invention are merely descriptions of the preferred implementation modes of the present invention, and are not intended to limit the concept and scope of the present invention. Without departing from the design concept of the present invention, various modifications and improvements made to the technical solutions of the present invention by engineers and technicians in this field should all fall within the protection scope of the present invention.

[0026] See also Figure 1-Figure 2 , an embodiment of the present invention provides a heat sink based on semiconductor heat dissipation technology, including: The thermocouple circuit 7 includes a first metal electrode 701, a second metal electrode 704, an N-type semiconductor 702 and a P-type semiconductor 703. The first metal electrode 701 and the second metal electrode 704 are respectively arranged at two ends of the N-type semiconductor 702 and the P-type semiconductor 703. The second metal electrode 704 is used to transfer heat to the chip to be cooled. The energy levels of the first metal electrode 701 and the second metal electrode 704 are higher than the energy levels of the electrons in the P-type semiconductor 703, and the energy levels of the first metal electrode 701 and the second metal electrode 704 are lower than the energy levels of the N-type semiconductor. Energy levels of electrons in 702; the electron flows in the order of the first metal electrode 701, the P-type semiconductor 703, the second metal electrode 704, and the N-type semiconductor 702; when the electrons flow from the first metal electrode 701 to the P-type semiconductor 703, they release energy to the surroundings; when the electrons flow from the P-type semiconductor 703 to the second metal electrode 704, they absorb heat from the surroundings; when the electrons flow from the N-type semiconductor 702 to the first metal electrode 701, they release energy to the surroundings; when the electrons flow from the second metal electrode 704 to the N-type semiconductor 702, they absorb heat from the surroundings; A hot plate 4, in contact with the first metal electrode 701 for heat transfer; The fin layer contacts the heat plate 4 to dissipate heat.

[0027] like Figure 1 As shown, the N-type semiconductor 702 and the P-type semiconductor 703 are disposed above the first metal electrode 701. The number of the N-type semiconductor 702 and the P-type semiconductor 703 are both multiple and symmetrically distributed on both sides of the first metal electrode 701.

[0028] The second metal electrode 704 is disposed on the upper surface of the N-type semiconductor 702 and the P-type semiconductor 703 . The second metal electrode 704 completely covers the N-type semiconductor 702 and the P-type semiconductor 703 , and is slightly longer than the overall length of the N-type semiconductor 702 and the P-type semiconductor 703 .

[0029] The N-type semiconductor 702 is doped with one of phosphorus, arsenic, and antimony, with a thickness of 0.9 mm to 1.1 mm and a width of 1.8 mm to 2 mm. The doping concentration is 5×10 18 cm -3 ~5×10 19 cm -3 The doping material of P-type semiconductor 703 is one of silicon carbide, gallium nitride, and gallium arsenide, with a thickness of 0.9 mm to 1.1 mm and a doping concentration of 1×10 15 cm -3 ~5×10 16 cm -3 .

[0030] The first metal electrode 701 and the second metal electrode 704 can be made of one of nickel, platinum, aluminum, copper, gold, and silver, and have a thickness of 0.8-0.9 mm.

[0031] In the thermocouple circuit 7, the current flows through the P-type semiconductor 703. Since the energy level of the electrons in the first metal electrode 701 is higher than that of the electrons in the P-type semiconductor 703, when the electrons flow through the first metal electrode 701 to the P-type semiconductor 703, the electrons release energy to the surrounding at the joint. Under the action of the power supply, the electrons move in a directional manner. When the electrons flow from the P-type semiconductor 703 to the second metal electrode 704, since the energy level of the electrons in the P-type semiconductor 703 is lower than that of the electrons in the second metal electrode 704, at the joint between the P-type semiconductor 703 and the second metal electrode 704, the electrons absorb heat from the surrounding and transition to a high energy level. When the electrons flow from the second metal electrode 704 to the N-type semiconductor 702, since the energy level of the electrons in the N-type semiconductor 702 is higher than that of the electrons in the second metal electrode 704, the electrons absorb heat. When the current flows from the N-type semiconductor 702 to the first metal electrode 701, the electrons transition to a low energy level and release energy. In the thermocouple circuit 7, the second metal electrode 704 forms a cold end, and the first metal electrode 701 forms a hot end. When the temperature difference between the two ends is 0, the second metal electrode 704 transfers heat to the chip through a layer of aluminum oxide film 8 at room temperature. According to Fourier's Law When the chip is working, the temperature of the heat source surface is 350K, and the temperature gradient between the chip and the metal below is about 60381.83K / m. If the metal electrode is made of aluminum, its thermal conductivity is 237W / (m•K), and the heat flux density q is 148827.8282W / m 2 , for the cold end cooling capacity , at room temperature, {Q}_{c}={T}_{source}\times [1+0.0042({T}_{h}-27)] The maximum cooling capacity of the cold end is 28.11W, and the heat flux is about 281100W / m 2 , which is much larger than the heat transmitted by the chip, so the cold end of the second metal electrode 704 can well absorb the heat released by the chip.

[0032] In this embodiment, the N-type semiconductor 702 is doped with phosphorus, with a thickness of 0.9 mm, a width of 1.8 mm, and a doping concentration of 1.6×1019 cm -3 The doping material of P-type semiconductor 703 is gallium nitride, with a thickness of 0.9 mm and a doping concentration of 3×1015 cm -3 , the length of the first metal electrode 701 is 6 mm, and the length of the second metal electrode 704 is 5.2 mm.

[0033] See also Figure 1and Figure 2 The fin layer includes a plurality of fin groups 2 arranged at intervals, each fin group 2 includes a plurality of forward serrated fins 201 and a plurality of reverse serrated fins 202, and the plurality of forward serrated fins 201 and the plurality of reverse serrated fins 202 are stacked alternately. The serrated fins are in a "few" shape connected to each other. The forward and reverse directions are opposite to each other in bending direction.

[0034] An air channel 208 is formed between adjacent fin groups 2. The width of the air channel 208 is preferably 8-10 mm.

[0035] In the illustrated embodiment, the plurality of fin groups 2 are respectively a first serrated fin group 203 , a second serrated fin group 204 , a third serrated fin group 205 , a fourth serrated fin group 206 , and a fifth serrated fin group 207 .

[0036] A sandblasting layer 1 is provided on the surface of the forward serrated fin 201 and the reverse serrated fin 202. The sandblasting layer 1 is made of one of silicon carbide, corundum, brown corundum, mullite and alumina.

[0037] Sandblasting can increase the roughness of the fin surface, which is beneficial to destroy the boundary layer of fluid flow and increase the turbulence of the boundary layer. In addition, sandblasting increases the contact area between the fin and the surrounding fluid and increases the heat conduction area. At the same time, the sandblasting layer 1 is an anti-corrosion measure to reduce the performance degradation of the fin caused by corrosion and further increase the service life of the fin.

[0038] Preferably, the fin group 2 adopts an anodizing process, and the material of the fin group 2 is one of anodized aluminum, anodized titanium, and anodized copper, and the thickness of the forward serrated fin 201 and the reverse serrated fin 202 are both 2~3mm, and they are bent every 3~5mm, the bending angle is 90°, and the total length is 135~139mm.

[0039] In this embodiment, the thickness of the forward serrated fin 201 and the reverse serrated fin 202 are both 2 mm. The forward serrated fin 201 and the reverse serrated fin 202 are bent once after 4 mm, and the bending angle is 90°; the spacing between adjacent fin groups 2, that is, the air flow channel 208 is 8 mm.

[0040] The staggered stacked fin group 2 structure increases the contact area with the air, and the heat transfer coefficient of the serrated fin is 30% higher than that of the traditional fin; the fin group 2 is cut in the gas flow direction and staggered a certain distance perpendicular to the flow direction, so that the fin group 2 has a strong fluid mixing effect in the gas flow direction and perpendicular to the flow direction, which helps to improve the uniformity of the flow, improve the heat exchange efficiency, and effectively transfer the excess heat of the heat plate 4 into the air. The fin group 2 is a detachable fin. When the heat dissipation capacity is surplus, it can be disassembled to save space.

[0041] The hot plate 4 includes: A plate body, wherein opposite sides of the plate body are respectively provided with a water inlet 410 and a water outlet 411 for respectively flowing in or out of the cooling liquid; a flow channel connecting the water inlet 410 and the water outlet 411 is provided inside the plate body; A splitter plate 408, disposed in the flow channel and close to the water injection port 410, the splitter plate 408 is used to split the coolant into three parts: upper, middle and lower parts; The coolant flow rate balancing plate 412 is disposed at the rear side of the diverter plate 408 and is used to distribute the flow so that the coolant flow rates on the left and right sides are balanced and the coolant flow rate is uniform after diversion; The spoiler is arranged at the rear side of the coolant flow velocity balance plate 412 to disturb the flow state of the coolant and improve the turbulence effect; The spoiler column 407 is arranged at the rear side of the spoiler plate to disturb the flow state of the coolant.

[0042] In the illustrated embodiment, a filter screen 401 is further provided at the water injection port 410 .

[0043] Further, the flow channel includes a first flow channel, a second flow channel and a third flow channel arranged in parallel, the first flow channel, the second flow channel and the third flow channel are connected end to end, the first flow channel is connected to the water inlet 410, and the third flow channel is connected to the water outlet 411; The splitter plate 408 is located in the first flow channel, and two prism-shaped spoiler columns are arranged on the splitter plate 408 at intervals. The prism-shaped spoiler columns divide the passing coolant into two directions of flow, namely, upper and lower directions, so as to disturb the flow state of the coolant and increase the heat dissipation capacity; The coolant flow rate balancing plate 412 is V-shaped, and the middle part thereof is rotatably mounted on the central column 414 on the first flow channel. The water-facing surface of the coolant flow rate balancing plate 412 is provided with a plurality of L-shaped pin fins 413; The spoiler includes a plurality of first spoilers 403 and a plurality of second spoilers 405 that are alternately arranged. The length of the second spoiler 405 is smaller than that of the first spoiler 403 , and two second spoilers 405 are arranged side by side with a gap between them.

[0044] Specifically, two parallel and spaced baffles 402 are provided in the plate body to separate the first flow channel, the second flow channel and the third flow channel respectively. There is a gap between the baffle 402 and the side wall of the plate body on the corresponding side to connect the first flow channel, the second flow channel and the third flow channel end to end. The first flow channel, the second flow channel and the third flow channel are connected end to end in an S shape. Such an arrangement significantly increases the Reynolds number Re At the same time, the length of the coolant flow path is increased, and the coolant has more time to contact the heat dissipation surface for heat transfer; secondly, the S-shaped flow channel makes the fluid flow more evenly in the flow channel, reducing the flow dead zone and improving the heat dissipation capacity.

[0045] The upper coolant moves upward and downward along both sides of the prism diverter column 409, the coolant flowing upward collides with the inner wall, and the coolant flowing downward meets the coolant in the middle, disturbing the flow state of the coolant. Similarly, the lower coolant moves upward and downward along both sides of the prism diverter column 409, the coolant flowing downward collides with the inner wall, and the coolant flowing upward meets the coolant in the middle, disturbing the flow state of the coolant and increasing the heat dissipation capacity.

[0046] A coolant flow rate balancing plate 412 is arranged behind the diverter plate 408 to balance the coolant flow rates on the left and right sides after the diversion, and an L-shaped pin fin 413 is arranged on the surface of the coolant flow rate balancing plate 412. This structure increases the degree of disturbance to the coolant, destroys the boundary layer, thereby increasing the turbulence of the coolant, improving the heat transfer efficiency of the coolant, and playing a good supporting role.

[0047] In the present embodiment, the first spoiler 403 is 8 mm long and 13 mm high. A first rectangular parallelepiped diverter column 404 is provided in the first spoiler 403, and the length is 6 mm and the height is 6 mm. The second spoiler 405 is 18 mm long and 13 mm high. A second rectangular parallelepiped diverter column 406 is provided in the second spoiler 405, and the length is 18 mm. The first spoiler 403 and the second spoiler 405 are alternately distributed, with an interval of 5 to 7 mm. The first spoiler 403 and the second spoiler 405 are provided in the flow channel, which not only increases the heat transfer area between the plate body and the coolant, but also produces a disturbing effect on the flow state of the coolant. The length of the first spoiler 403 and the second spoiler 405 reduces the flow channel gap, so that the overall flow velocity of the coolant in the flow channel is higher, which can improve the heat dissipation efficiency of the radiator.

[0048] Preferably, the plate body is one of copper and aluminum, and its inner wall is formed into a vapor deposition layer 5 by plasma enhanced chemical vapor deposition (PECVD), and the deposition material is one of silicon nitride, silicon dioxide, boron nitride, and aluminum oxide, wherein the thickness of the inner wall of the plate body is 2~3mm, and the thickness of the vapor deposition layer 5 is 0.8~1mm.

[0049] Furthermore, the heat sink based on semiconductor heat dissipation technology also includes: The isolation layer 6 is disposed between the thermocouple circuit 7 and the hot plate 4. The isolation layer 6 is made of one of silicon oxide, silicon nitride and aluminum oxide, and has a thickness of 0.5-0.8 mm.

[0050] Providing the isolation layer 6 can prevent the heat plate 4 from affecting the operation of the thermocouple circuit 7 , improve the signal-to-noise ratio of the thermocouple circuit 7 during operation, and protect the first metal electrode 701 at the same time.

[0051] Furthermore, the heat sink based on semiconductor heat dissipation technology also includes: The aluminum oxide film 8 is disposed on the second metal electrode 704 for heat transfer with the chip and has a thickness of 0.8-1 mm. The aluminum oxide film 8 is an aluminum oxide quantum dot film and the diameter of the quantum dots is 1-20 nm.

[0052] The aluminum oxide film 8 has high transparency, high bandgap width, and high dielectric constant. It serves as a passivation layer to cover the thermocouple circuit 7. The high bandgap width prevents electrons in the valence band of aluminum oxide from jumping to the conduction band, making the aluminum oxide film 8 have a higher impedance, providing a stable working environment for the thermocouple circuit 7.

[0053] Furthermore, the heat sink based on semiconductor heat dissipation technology also includes: The thermal grease layer 3 fills the gap between the fin layer and the heat plate 4. The thermal grease layer 3 has a thickness of 0.5-0.7 mm and is doped with silicone oil, boron nitride, silicon carbide, silicon dioxide, iron octanoate, and cyclopentaneate.

[0054] The thermal grease fills the gaps and uneven areas between the fins and the heat plate 4, reducing the air thermal resistance and thus optimizing heat transfer; secondly, the thermal grease can quickly transfer the heat of the heat plate 4 to the fin group 2 below, reducing the bottom temperature of the heat plate 4, increasing the temperature gradient of the heat plate 4, and thereby improving the heat conduction efficiency.

[0055] Furthermore, the N-type semiconductor 702 and the P-type semiconductor 703 are respectively disposed on both sides of the surface of the first metal electrode 701, and the N-type semiconductor 702 is doped with one of phosphorus, arsenic, and antimony, with a thickness of 0.9 mm to 1.1 mm, a width of 1.8 mm to 2 mm, and a doping concentration of 5×10 18 cm -3 ~5×10 19 cm -3 The doping material of P-type semiconductor 703 is one of silicon carbide, gallium nitride, and gallium arsenide, with a thickness of 0.9 mm to 1.1 mm and a doping concentration of 1×10 15 cm -3 ~5×10 16 cm -3 .

[0056] The radiator uses the Peltier effect for high-power chips. After the device is started, it can quickly reduce the temperature and achieve a stable working state. During long-term operation, the radiator can maintain a stable temperature range fluctuation. During the heat dissipation process, the temperature can be evenly distributed in various parts, and the maximum temperature can be reduced by 65°C.

[0057] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments or to make equivalent substitutions for some of the technical features therein. However, any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A heat sink based on semiconductor heat dissipation technology, characterized in that: include: A thermocouple circuit comprises a first metal electrode, a second metal electrode, an N-type semiconductor and a P-type semiconductor, wherein the first metal electrode and the second metal electrode are respectively arranged at two ends of the N-type semiconductor and the P-type semiconductor, and the second metal electrode is used for heat transfer with a chip to be cooled; the energy levels of the first metal electrode and the second metal electrode are higher than the energy levels of electrons in the P-type semiconductor, and the energy levels of the first metal electrode and the second metal electrode are lower than the energy levels of electrons in the N-type semiconductor; The electron flows in the order of the first metal electrode, the P-type semiconductor, the second metal electrode, and the N-type semiconductor; when the electrons flow from the first metal electrode to the P-type semiconductor, they release energy to the surroundings; when the electrons flow from the P-type semiconductor to the second metal electrode, they absorb heat from the surroundings; when the electrons flow from the N-type semiconductor to the first metal electrode, they release energy to the surroundings; when the electrons flow from the second metal electrode to the N-type semiconductor, they absorb heat from the surroundings; a hot plate in contact with the first metal electrode for heat transfer; The fin layer contacts the heat plate to dissipate heat.

2. The heat sink based on semiconductor heat dissipation technology according to claim 1, characterized in that: The fin layer includes a plurality of fin groups arranged at intervals, each fin group includes a plurality of forward serrated fins and a plurality of reverse serrated fins, and the plurality of forward serrated fins and the plurality of reverse serrated fins are stacked alternately.

3. The heat sink based on semiconductor heat dissipation technology according to claim 2, characterized in that: The thickness of the forward serrated fin and the reverse serrated fin are both 2 mm. The forward serrated fin and the reverse serrated fin are bent once after 4 mm, and the bending angle is 90°; the spacing between adjacent fin groups is 8 mm.

4. The heat sink based on semiconductor heat dissipation technology according to claim 3, characterized in that: The surfaces of the forward serrated fins and the reverse serrated fins are provided with a sandblasting layer, and the sandblasting layer is one of silicon carbide, corundum, brown corundum, mullite sand, and alumina.

5. The heat sink based on semiconductor heat dissipation technology according to claim 1, characterized in that: The hot plate comprises: A plate body, wherein opposite sides of the plate body are respectively provided with a water inlet and a water outlet for respectively flowing in or out of the cooling liquid; a flow channel connecting the water inlet and the water outlet is provided inside the plate body; A splitter plate, arranged in the flow channel and close to the water injection port, the splitter plate is used to split the coolant into three parts: upper, middle and lower parts; The coolant flow rate balancing plate is arranged at the rear side of the diverter plate and is used to distribute the flow so that the coolant flow rates on the left and right sides after diversion are balanced and the coolant flow rate is uniform; The spoiler is arranged at the rear side of the coolant flow velocity balance plate to disturb the flow state of the coolant and improve the turbulence effect; The spoiler column is arranged at the rear side of the spoiler plate to disturb the flow state of the coolant.

6. The heat sink based on semiconductor heat dissipation technology according to claim 5, characterized in that: The flow channel comprises a first flow channel, a second flow channel and a third flow channel arranged in parallel, the first flow channel, the second flow channel and the third flow channel are connected end to end, the first flow channel is connected to the water inlet, and the third flow channel is connected to the water outlet; The splitter plate is located in the first flow channel, and two prism-shaped spoiler columns are arranged on the splitter plate at intervals. The prism-shaped spoiler columns divide the passing coolant into two directions of flow, upper and lower, so as to disturb the flow state of the coolant and increase the heat dissipation capacity; The coolant flow rate balancing plate is V-shaped, the middle part of which is rotatably mounted on the central column on the first flow channel, and the water-facing surface of the coolant flow rate balancing plate is provided with a plurality of L-shaped pin fins; The spoiler comprises a plurality of first spoilers and a plurality of second spoilers which are arranged alternately. The length of the second spoiler is smaller than that of the first spoiler, and two second spoilers are arranged side by side with a gap between them.

7. The heat sink based on semiconductor heat dissipation technology according to claim 1, characterized in that: The radiator based on semiconductor heat dissipation technology also includes: The isolation layer is arranged between the thermocouple circuit and the hot plate. The isolation layer is made of one of silicon oxide, silicon nitride and aluminum oxide, and has a thickness of 0.5-0.8 mm.

8. The heat sink based on semiconductor heat dissipation technology according to claim 7, characterized in that: The radiator based on semiconductor heat dissipation technology also includes: The aluminum oxide film is arranged on the second metal electrode and is used for heat transfer with the chip. The thickness is 0.8-1 mm. The aluminum oxide film is an aluminum oxide quantum dot film, and the diameter of the quantum dot is 1-20 nm.

9. The heat sink based on semiconductor heat dissipation technology according to claim 1, characterized in that: The radiator based on semiconductor heat dissipation technology also includes: The thermal conductive silicone grease layer fills the gap between the fin layer and the heat plate. The thermal conductive silicone grease layer has a thickness of 0.5-0.7 mm and is doped with silicone oil, boron nitride, silicon carbide, silicon dioxide, iron octanoate, and cyclopentaneate.

10. The heat sink based on semiconductor heat dissipation technology according to claim 1, characterized in that: The N-type semiconductor and the P-type semiconductor are respectively arranged on both sides of the surface of the first metal electrode. The N-type semiconductor is doped with one of phosphorus, arsenic and antimony, with a thickness of 0.9 mm to 1.1 mm and a width of 1.8 mm to 2 mm. The doping concentration is 5×10 18 cm -3 ~5×10 19 cm -3 The P-type semiconductor doping material is one of silicon carbide, gallium nitride, and gallium arsenide, with a thickness of 0.9 mm to 1.1 mm and a doping concentration of 1×10 15 cm -3 ~5×10 16 cm -3 .

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