Semiconductor packaging structure

Abstract

The invention provides a semiconductor packaging structure. The semiconductor packaging structure comprises a semiconductor substrate, the semiconductor substrate comprises a printed circuit board and a molding packaging body, the printed circuit board is located on part of the surface of the molding packaging body, a first containing groove is formed in the molding packaging body, and the printed circuit board covers the first containing groove; the semiconductor laser chip is located on one side of the exposed surface of the printed circuit board or on one side of the exposed surface of the molding packaging body, and the semiconductor laser chip is electrically connected with the printed circuit board; the driving chip is located in the first containing groove and electrically connected with the printed circuit board, and the first containing groove is completely filled with the driving chip. According to the semiconductor packaging structure, the driving chip is located in the first containing groove of the molding packaging body, so that the driving chip and the molding packaging body share the same occupied area in the semiconductor packaging structure, and the purpose of reducing the size of the semiconductor packaging structure is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuits, and in particular to a semiconductor packaging structure. Background Art

[0002] In classic time-of-flight measurement, the principle of direct time-of-flight (D-ToF, hereinafter referred to as D-ToF) is relatively direct, that is, a light pulse is directly emitted, and then the time interval between the reflected light pulse and the emitted light pulse is measured to obtain the flight time of light. It is usually used in single-point ranging systems.

[0003] Among them, in the traditional packaging method, the D-ToF structure is usually packaged using a ceramic substrate due to its high heat dissipation requirements, and the chips and circuit devices in this D-ToF structure are exposed in space, resulting in a loose package and a large size of the package structure.

[0004] Therefore, there is an urgent need for a semiconductor packaging structure that can at least reduce the chip packaging size. Summary of the invention

[0005] The main purpose of the present invention is to provide a semiconductor packaging structure to solve the problem of large size of the packaging structure in the prior art.

[0006] In order to achieve the above-mentioned purpose, according to one aspect of the present invention, there is provided a semiconductor packaging structure, comprising: a semiconductor substrate, comprising a printed circuit board and a molded package body, the printed circuit board is located on a partial surface of the molded package body, and the molded package body has a first receiving groove, and the printed circuit board covers the first receiving groove; a semiconductor laser chip is located on one side of the exposed surface of the printed circuit board or on one side of the exposed surface of the molded package body, and the semiconductor laser chip is electrically connected to the printed circuit board; a driver chip is located in the first receiving groove and is electrically connected to the printed circuit board, wherein the driver chip completely fills the first receiving groove.

[0007] Further, the semiconductor laser chip has a first projection on the molded package, the driver chip has a second projection on the molded package, and the first projection does not overlap with the second projection.

[0008] Furthermore, it also includes: a metal substrate, located between the semiconductor laser chip and the printed circuit board or between the semiconductor laser chip and the molded package, wherein, when the semiconductor laser chip is located on one side of the exposed surface of the printed circuit board, the metal substrate is located between the semiconductor laser chip and the printed circuit board, and when the semiconductor laser chip is located on one side of the exposed surface of the molded package, the metal substrate is located between the semiconductor laser chip and the molded package.

[0009] Furthermore, the molded package body has a plurality of second accommodating grooves, and the printed circuit board covers the plurality of second accommodating grooves. The semiconductor packaging structure also includes: a plurality of first electronic components, which are located in the plurality of second accommodating grooves, each of the first electronic components is electrically connected to the printed circuit board, the plurality of first electronic components correspond one-to-one to the plurality of second accommodating grooves, each first electronic component completely fills each second accommodating groove, and the semiconductor laser chip has a first projection on the molded package body, each of the first electronic components has a third projection on the molded package body, and the first projection and the third projection do not overlap.

[0010] Furthermore, it also includes: a first support portion, which is located on the exposed surface of the printed circuit board and surrounds the semiconductor laser chip; a first metal lens lens, which is located on the side of the first support portion away from the printed circuit board, and a first sealed cavity is provided between the first metal lens lens, the first support portion and the semiconductor substrate, and the semiconductor laser chip is located in the first sealed cavity.

[0011] Furthermore, it also includes: a photodetector chip, which is located on the exposed surface of the printed circuit board and is spaced apart from the semiconductor laser chip, wherein when the semiconductor packaging structure includes a first supporting portion, the first supporting portion is spaced apart from the photodetector chip.

[0012] Furthermore, a straight line passing through the center of the photodetector chip and parallel to the exposed surface of the printed circuit board is a first center line, a straight line passing through the center of the semiconductor laser chip and parallel to the exposed surface of the printed circuit board is a second center line, and the first center line and the second center line are collinear.

[0013] Furthermore, it also includes: a second supporting part, which is located on the printed circuit board and surrounds the photodetector chip; a second super lens lens, which is located on the side of the second supporting part away from the printed circuit board, and a second sealed cavity is provided between the second supporting part, the second super lens lens and the semiconductor substrate, and the photodetector chip is located in the second sealed cavity.

[0014] Furthermore, the molded package body has a plurality of third accommodating grooves, and the printed circuit board covers the plurality of third accommodating grooves. The semiconductor packaging structure also includes: a plurality of second electronic components, which are located in the plurality of third accommodating grooves, each second electronic component is electrically connected to the printed circuit board, the plurality of second electronic components correspond one-to-one to the plurality of third accommodating grooves, each second electronic component completely fills each third accommodating groove, and the photodetector chip has a fourth projection on the molded package body, each second electronic component has a fifth projection on the molded package body, and the fourth projection and the fifth projection do not overlap.

[0015] Further, the semiconductor laser chip includes a vertical cavity surface emitting laser, and the photodetector chip includes a single electron avalanche diode.

[0016] By applying the technical solution of the present invention, in order to more quickly extract the heat generated by the semiconductor device in the semiconductor packaging structure and improve the packaging stability of the driver chip in the semiconductor packaging structure, a semiconductor packaging structure is provided, wherein the semiconductor packaging structure includes a semiconductor substrate, a semiconductor laser chip and a driver chip, wherein a molded packaging body is used as a heat dissipation substrate in the semiconductor packaging structure, so that the printed circuit board is located on a part of the surface of the molded packaging body, and because the heat dissipation coefficient of the molded packaging body is greater than the heat dissipation coefficient of the printed circuit board, the heat generated by the semiconductor device located on the printed circuit board can be extracted to prevent the heat from damaging the semiconductor device, and a semiconductor laser chip electrically connected to the printed circuit board is provided on a side of the printed circuit board away from the molded packaging body. On the exposed surface and / or the exposed surface of the molded package, the driver chip is located in the first receiving groove in the molded package, and the driver chip is in contact with the printed circuit board. Therefore, the above-mentioned molded package for encapsulating semiconductor devices can cover the driver chip, thereby improving the stability of the driver chip in the semiconductor packaging structure and the packaging strength of the driver chip. Moreover, since the driver chip is completely filled in the first receiving groove in the above-mentioned molded package, the driver chip and the molded package are integrated, which avoids the driver chip and the heat dissipation substrate of the semiconductor packaging structure occupying different packaging areas in the semiconductor packaging structure respectively, so that the driver chip and the molded package have a common occupied area in the semiconductor packaging structure, thereby achieving the purpose of reducing the size of the semiconductor packaging structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the accompanying drawings:

[0018] Figure 1 A schematic cross-sectional structure diagram of an embodiment of a semiconductor packaging structure according to the present invention is shown;

[0019] Figure 2 A schematic cross-sectional structure diagram of another embodiment of a semiconductor package structure according to the present invention is shown;

[0020] Figure 3 A schematic cross-sectional structure diagram of another embodiment of a semiconductor package structure according to the present invention is shown;

[0021] Figure 4 A schematic diagram showing the projection of a semiconductor laser chip and a photodetector chip on a molded package body in another embodiment of a semiconductor package structure is shown;

[0022] Figure 5Shows Figure 3 A schematic diagram of projection of a driver chip and a first electronic component and a second electronic component in the semiconductor package structure shown on a molded package body;

[0023] Figure 6 A schematic cross-sectional structure diagram of another embodiment of a semiconductor package structure according to the present invention is shown;

[0024] Figure 7 Shows Figure 6 The schematic diagram of projection of the driving chip and the first electronic component and the second electronic component in the semiconductor package structure on the molded package body is shown.

[0025] The above drawings include the following reference numerals:

[0026] 10. Molded package; 20. Printed circuit board; 30. Semiconductor laser chip; 40. Driver chip; 50. Photodetector chip; 60. Metal substrate; 70. First electronic component; 80. First support portion; 90. First metal lens; 100. Second electronic component; 110. Fixing glue; 120. Second support portion; 130. Second metal lens; 140. First center line; 150. Second center line. DETAILED DESCRIPTION

[0027] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0028] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0029] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present invention described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0030] As mentioned in the background technology, in order to make the packaging structure have a better heat dissipation effect, a ceramic substrate is usually used for packaging in the traditional chip packaging structure. Since the chips and circuit devices in this packaging structure are exposed in space, the packaging structure is not firm and the size of the packaging structure is large. In order to solve the above technical problems, the inventor of the present application provides a semiconductor packaging structure.

[0031] In some optional implementations, the inventors of the present application provide a semiconductor packaging structure, such as Figure 1 As shown, the semiconductor packaging structure includes a semiconductor substrate, a semiconductor laser chip 30 and a driver chip 40, wherein the semiconductor substrate includes a printed circuit board 20 and a molded package body 10, the printed circuit board 20 is located on a partial surface of the molded package body 10, and the molded package body 10 has a first receiving groove, the printed circuit board 20 covers the first receiving groove, the semiconductor laser chip 30 is located on one side of the exposed surface of the printed circuit board 20 or the semiconductor laser chip 30 is located on one side of the exposed surface of the molded package body 10, the driver chip 40 is located in the first receiving groove and is electrically connected to the printed circuit board 20, wherein the driver chip 40 completely fills the first receiving groove.

[0032] Specifically, the printed circuit board 20 may be a flexible printed circuit board, and the molded package 10 may be an epoxy molded package.

[0033] Specifically, since the printed circuit board 20 is located on a partial surface of the molded package 10, the semiconductor substrate may include the printed circuit board 20 and the molded package 10 stacked in sequence; or the semiconductor substrate may include a first portion in which the printed circuit board 20 and the molded package 10 are stacked in sequence and a second portion that only includes the molded package 10. It can be understood that the first portion and the second portion are connected to each other. Therefore, in the case where the semiconductor substrate includes the printed circuit board 20 and the molded package 10 stacked in sequence, the exposed surface is the exposed surface of the printed circuit board 20 away from the molded package 10, and then the semiconductor laser chip 30 is located on the exposed surface of the printed circuit board 20 away from the molded package 10; in the case where the semiconductor substrate may include a first portion in which the printed circuit board 20 and the molded package 10 are stacked in sequence and a second portion that only includes the molded package 10, the semiconductor laser chip 30 may be located on the exposed surface of the printed circuit board 20 in the first portion on the side away from the molded package 10, such as Figure 1 As shown, and / or the semiconductor laser chip 30 may be located on a partially exposed surface of the surface of the molded package 10 in the second portion that is not covered by the printed circuit board 20, such as Figure 2 As shown. Further, the semiconductor laser chip 30 is electrically connected to the printed circuit board 20. Exemplarily, the semiconductor laser chip 30 can be connected to the printed circuit board 20 by bonding wires, wherein, when the semiconductor laser chip 30 is located on the exposed surface of the molded package 10, a fixing glue 110 can be used around the semiconductor laser chip 30 to achieve the purpose of fixing the package, and optionally, the fixing glue 110 can be an insulating glue.

[0034] Specifically, Figure 2 As shown, the driver chip 40 is arranged in contact with the printed circuit board 20, so as to realize the electrical connection between the driver chip 40 and the printed circuit board 20, so that the driver chip 40 is used to drive the semiconductor laser chip 30 located on the printed circuit board 20 to emit light. Furthermore, in order to enhance the stability of the driver chip 40 in the semiconductor packaging structure, the driver chip 40 can be packaged in the molded package body 10 to realize the integration of the driver chip 40 and the molded package body 10. Therefore, the molded package body 10 has a first receiving groove corresponding to the driver chip 40, that is, when the driver chip 40 is located in the first receiving groove, the driver chip 40 completely fills the first receiving groove, thereby not only reducing the size of the semiconductor packaging structure, but also further enhancing the stability of the semiconductor packaging structure. In addition, since the molded package body 10 itself has a good heat dissipation effect, the semiconductor packaging structure will also have a higher effect efficiency.

[0035] Since semiconductor devices generate heat during operation, existing semiconductor packaging methods generally use a thermoelectrically separated packaging structure. In the above-mentioned embodiment of the present application, in order to more quickly extract the heat generated by the semiconductor device in the semiconductor packaging structure and improve the packaging stability of the driver chip 40 in the semiconductor packaging structure, a molded package body 10 is used as a heat dissipation substrate in the semiconductor packaging structure, so that the printed circuit board 20 is located on a portion of the surface of the molded package body 10. Optionally, the thermal conductivity of the above-mentioned molded plastic package body can be 2W / (m·K), and the thermal conductivity of the above-mentioned printed circuit board can be 0.3W / (m·K). As can be seen from the above, the molded plastic package has good thermal conductivity, so it can achieve the purpose of conducting away the heat generated by the semiconductor device on the printed circuit board 20 to prevent the heat from damaging the semiconductor device. Moreover, since the molded package 10 formed for packaging the semiconductor device can cover the driver chip 40, the stability of the driver chip 40 in the semiconductor packaging structure is improved. Moreover, since the driver chip 40 completely fills the first receiving groove in the molded package 10, the driver chip 40 and the molded package 10 are integrated, and the driver chip 40 is prevented from occupying the surface area of ​​the printed circuit board 20 additionally, thereby reducing the size of the semiconductor packaging structure. Furthermore, since the molded package 10 also has advantages such as good tensile strength, impact strength, heat resistance, dimensional stability and processability, the molded package 10 can increase the flatness and strength of the printed circuit board 20.

[0036] In some optional embodiments, the semiconductor laser chip 30 has a first projection on the molded package 10, and the driver chip 40 has a second projection on the molded package 10, wherein the molded package 10 corresponding to the first projection is a heat zone of the semiconductor packaging structure. When the driver chip is located in the molded package corresponding to the heat zone, the heat zone will affect the performance of the semiconductor device, that is, the driver chip is easily heated and thermal drift occurs, causing electronic signal interference. Therefore, in order to avoid thermal drift of the driver chip and reduce electronic signal interference, when determining the first projection and the second projection, the first projection and the second projection are made not to overlap.

[0037] Specifically, in an optional embodiment, the semiconductor package structure includes a semiconductor substrate, a semiconductor laser chip 30 and a driver chip 40, wherein the semiconductor substrate includes a molded package body 10 and a printed circuit board 20 that are stacked, wherein the semiconductor laser chip is located on a side surface of the printed circuit board 20 away from the molded package body 10, and the driver chip 40 is located in the molded package body 10, and the molded package body 10 has a first receiving groove, so that the driver chip 40 is located in the first receiving groove, and the driver chip 40 completes filling the first receiving groove, and the driver chip 40 is electrically connected to the printed circuit board 20. Further, the projection of the semiconductor laser chip 30 on the printed circuit board 20 and the projection on the molded package body 10 correspond to the first projection, and the projection of the driver chip 40 on the molded package body 10 corresponds to the second projection, and the first projection does not overlap with the second projection.

[0038] Specifically, in another optional embodiment, the semiconductor substrate includes a first portion in which the printed circuit board 20 and the molded package 10 are stacked and a second portion only includes a single-layer molded package 10 that is not covered by the printed circuit board 20, the first portion and the second portion are connected to each other, and the semiconductor laser chip 30 is located on the exposed surface of the single-layer molded package 10 that is not covered by the printed circuit board 20, the driver chip 40 is located in the molded package 10, and the molded package 10 has a first receiving groove, the driver chip 40 completely fills the first receiving groove, and the driver chip 40 is electrically connected to the printed circuit board 20. Further, the projection of the semiconductor laser chip 30 on the molded package 10 corresponds to the first projection, the projection of the driver chip 40 on the molded package 10 corresponds to the second projection, and the first projection does not overlap with the second projection.

[0039] Further, in the case where the semiconductor substrate includes a first portion in which a printed circuit board 20 and a molded package 10 are stacked and a second portion including only a single-layer molded package 10 that is not covered by the printed circuit board 20, and the first portion and the second portion are connected to each other, if the semiconductor laser chip 30 includes a plurality of semiconductor laser chips, some of the semiconductor laser chips 30 can be located on a side surface of the printed circuit board 20 away from the molded package 10, and another part of the semiconductor laser chips 30 can be located on an exposed surface of the single-layer molded package 10 that is not covered by the printed circuit board 20.

[0040] In some optional embodiments, in order to electrically connect the semiconductor laser chip 30 and the printed circuit board 20, or to enable the semiconductor laser chip 30 to better transfer heat to the molded package 10 and to conduct heat out of the molded package 10, the semiconductor package structure may further include a metal substrate 60. Specifically, the metal substrate 60 may be located between the semiconductor laser chip 30 and the printed circuit board 20, or between the semiconductor laser chip 30 and the molded package 10. In the case where the semiconductor laser chip 30 is located on one side of the exposed surface of the printed circuit board 20, the metal substrate 60 is located between the semiconductor laser chip 30 and the printed circuit board 20, such as Figure 1 As shown, in the case where the semiconductor laser chip 30 is located on one side of the exposed surface of the molded package 10, the metal substrate 60 is located between the semiconductor laser chip 30 and the molded package 10, as shown in FIG. Figure 2 shown.

[0041] The material of the metal substrate 60 may include but is not limited to copper, gold, silver and other materials. The metal substrate 60 is also used to connect the cathode of the semiconductor laser chip 30 to the printed circuit board 20. Optionally, the thermal conductivity of the semiconductor laser chip 30 may be 120 W / m·K, and the thermal conductivity of the metal substrate 60 may be 200 W / m·K or above. The metal substrate 60 is connected to the printed circuit board 20 or the molded package 10 as a whole piece of metal material, so that the heat of the semiconductor laser chip 30 can be directly transferred to the printed circuit board 20 or the molded package 10, thereby improving the heat dissipation efficiency of the semiconductor laser chip 30, and thereby improving the heat dissipation efficiency of the semiconductor packaging structure. Optionally, in order to further enhance the heat dissipation efficiency of the semiconductor packaging structure, the vertical projection area of ​​the metal substrate 60 on the molded package 10 is larger than the vertical projection area of ​​the semiconductor laser chip 30 on the molded package 10.

[0042] More specifically, in the case where the semiconductor substrate in the semiconductor package structure includes a printed circuit board 20 and a molded package body 10 stacked in layers, since the semiconductor laser chip 30 is located on a side of the printed circuit board 20 away from the exposed surface of the molded package body 10, the metal substrate 60 is located between the semiconductor laser chip 30 and the printed circuit board 20; in the case where the semiconductor substrate in the semiconductor package structure includes a first portion in which the printed circuit board 20 and the molded package body 10 are stacked in layers and a second portion that only includes the molded package body 10, the first portion and the second portion are connected to each other, and the semiconductor laser chip 30 is located on a side of the exposed surface of the molded package body 10, the metal substrate 60 can be located between the semiconductor laser chip 30 and the printed circuit board 20. and the molded package 10; in the above-mentioned semiconductor package structure, the semiconductor substrate includes a first part in which the printed circuit board 20 and the molded package 10 are stacked and a second part which only includes the molded package 10, the first part and the second part are connected to each other, and the semiconductor laser chip 30 includes a plurality of semiconductor laser chips. When some semiconductor laser chips 30 are located on the side of the printed circuit board 20 away from the exposed surface of the molded package 10, the above-mentioned metal substrate 60 is provided between the part of the semiconductor laser chip 30 and the printed circuit board 20, and when another part of the semiconductor laser chip 30 is located on the side of the exposed surface of the molded package 10, the above-mentioned metal substrate 60 is provided between the other part of the semiconductor laser chip 30 and the molded package 10.

[0043] In order to reduce the package size of semiconductor packaging structures, such as Figure 1 As shown, in some optional embodiments, the molded package 10 has a plurality of second receiving grooves, the printed circuit board 20 covers the plurality of second receiving grooves, the semiconductor packaging structure also includes a plurality of first electronic components 70, which are located in the plurality of second receiving grooves, each first electronic component 70 is electrically connected to the printed circuit board 20, the plurality of first electronic components 70 correspond one-to-one to the plurality of second receiving grooves, each first electronic component 70 completely fills each second receiving groove, and the semiconductor laser chip 30 has a first projection on the molded package 10, each first electronic component 70 has a third projection on the molded package 10, and the first projection and the third projection do not overlap.

[0044] In the above embodiment, the projection of the semiconductor laser chip 30 on the molded package 10 is the first projection, and because the semiconductor laser chip 30 generates heat during operation, the area in the molded package 10 corresponding to the first projection of the semiconductor laser chip 30 is the heat area. When the electronic component is located in the heat area, the performance of the electronic component will be affected, that is, it is easy to be heated and thermal drift occurs, causing electronic signal interference and the like. Therefore, the above electronic component is arranged in the molded package 10 outside the first projection, that is, a plurality of second accommodating grooves are provided in the molded package 10, and each second accommodating groove is completely filled with each electronic component, so that when the projection of each electronic component in the molded package 10 is the third projection, the above first projection and the third projection do not overlap.

[0045] Specifically, the first electronic component 70 may include electronic components such as resistors, capacitors or inductors in the same circuit structure as the semiconductor laser chip 30. Optionally, the first electronic component 70 may be a packaged electronic component with a certain elasticity. For example, the resistor may be a mixture of metal powder and glass glaze powder, and may be screen printed on the surface of the printed circuit board 20, and the resistor may completely fill the second receiving groove in the molded package 10. For example, the capacitor may be a chip capacitor, i.e., a multilayer (laminated or laminated) chip ceramic capacitor, also known as a chip capacitor, a chip capacitor, etc., which is formed by stacking ceramic dielectric films with electrodes in a dislocated manner, and then sintered at a high temperature once to form a ceramic chip, and then a metal layer is formed at both ends of the ceramic chip as an external electrode, thereby forming a structure similar to a monolith, which has a stronger elasticity than the molded package 10, so that the first electronic component 70 with a stronger elasticity is encapsulated in the molded package 10, and the elasticity of the molded package 10 can be further increased, thereby improving the packaging elasticity of the semiconductor packaging structure and improving the reliability of the semiconductor packaging structure.

[0046] Furthermore, if Figure 1 As shown, the size of the driving chip 40 is larger than that of the first electronic component 70, the multiple first electronic components 70 and the driving chip 40 are arranged at intervals, and the multiple first electronic components 70 can be distributed around the semiconductor laser chip 30 at intervals, or the multiple first electronic components 70 and the driving chip 40 can be distributed at intervals on any side of the semiconductor laser chip 30.

[0047] In order to provide a good working environment for the semiconductor laser chip 30, so that the semiconductor laser chip 30 is protected from the influence of the external environment (wherein the environmental influence may be the erosion of substances such as water and air, etc.), as Figure 1As shown, in some optional embodiments, the semiconductor package structure may further include a first support portion 80 and a first super lens head 90, wherein the first support portion 80 is located on the exposed surface of the printed circuit board 20 and surrounds the semiconductor laser chip 30, the first super lens head 90 is located on the side of the first support portion 80 away from the printed circuit board 20, and a first sealed cavity is provided between the first super lens head 90, the first support portion 80 and the semiconductor substrate, and the semiconductor laser chip 30 is located in the first sealed cavity, so that the semiconductor laser chip 30 is isolated from external water vapor, etc. Further, since the semiconductor laser chip 30 also includes the first super lens head 90, since the super lens itself has a strong focusing ability, after the light passes through the first super lens head 90, the relative light intensity of the light that the semiconductor laser chip 30 can receive is also large. In addition, since the distance between the super lens and the semiconductor laser chip 30 can be closer, the size of the semiconductor package structure can be made smaller.

[0048] Optionally, the first metalens lens 90 may adopt a multivariable optical element (MOE), wherein, since the unit structure of the first metalens lens 90 is usually at the half-wavelength level, illustratively, the first metalens lens 90 may have a microstructure, which may be set to a cylindrical, square, diamond-shaped column, etc., and further, the first metalens lens 90 may be adjusted to achieve different phase modulations for light in different regions by using different shapes and different sizes (including height). illustratively, the height of each microstructure in the first metalens lens 90 may be consistent, and the gaps between adjacent microstructures may be inconsistent. Further, the gaps between adjacent microstructures may be set to be smaller than the gaps at the wavelength level, thereby achieving diffraction of light, and through diffraction, light adjustment may be achieved, including adjusting the phase of the light and / or adjusting the angle of the light.

[0049] Furthermore, in order to measure and receive the laser light emitted by the semiconductor laser chip 30, as shown in FIG. Figure 3 As shown, in some optional embodiments, the semiconductor packaging structure may further include a photodetector chip 50 in addition to the semiconductor substrate, the semiconductor laser chip 30 and the driver chip 40, wherein the photodetector chip 50 is located on the exposed surface of the printed circuit board 20 and is spaced apart from the semiconductor laser chip 30.

[0050] Furthermore, if Figure 3As shown, the semiconductor package structure in this embodiment may further include a metal substrate 60, which is located between the semiconductor laser chip 30 and the printed circuit board 20 or between the semiconductor laser chip 30 and the molded package 10. Optionally, the metal substrate 60 may also be located between the photodetector chip 50 and the printed circuit board 20 or between the photodetector chip 50 and the molded package 10. Further, as Figure 3 As shown, the semiconductor package structure in this embodiment may further include a plurality of first electronic components 70, the plurality of first electronic components 70 corresponding to the plurality of second receiving grooves in the molded package body 10 one by one and each first electronic component 70 completely fills each corresponding second receiving groove. Figure 3 As shown, the semiconductor packaging structure may further include the first supporting portion 80 and the first super lens head 90 , wherein when the semiconductor packaging structure includes the first supporting portion 80 , the first supporting portion 80 is spaced apart from the photodetector chip 50 .

[0051] Optionally, in the case where the semiconductor substrate includes a stacked printed circuit board 20 and a molded package 10, the photodetector chip 50 may be located on a side of the printed circuit board 20 away from an exposed surface of the molded package 10, and electrically connected to the printed circuit board 20; or optionally, in the case where the semiconductor substrate includes a molded package 10 and a printed circuit board 20 located on a partial surface of the molded package 10, the photodetector chip 50 may be located on a side of the exposed surface of the molded package 10, and electrically connected to the printed circuit board 20.

[0052] In some optional embodiments, such as Figure 4 As shown, in order to make the laser emitted by the semiconductor laser chip 30 easier to be received by the photodetector chip 50 in a fixed rule, a straight line passing through the center of the photodetector chip 50 and parallel to the exposed surface of the printed circuit board 20 is defined as a first center line 140, and a straight line passing through the center of the semiconductor laser chip 30 and parallel to the exposed surface of the printed circuit board 20 is defined as a second center line 150, so that the first center line 140 and the second center line 150 are collinear. Optionally, according to this embodiment, the efficiency of depth perception of the system including the above-mentioned semiconductor laser chip 30 and the above-mentioned photodetector chip 50 can also be improved. Furthermore, since the above-mentioned semiconductor laser chip 30 and the photodetector chip 50 are arranged in a collinear manner, the window opening of the projection device corresponding to the semiconductor laser chip 30 can also be reduced, thereby reducing the opening of the projection device corresponding to the semiconductor laser chip 30.

[0053] Likewise, in some optional embodiments, such as Figure 3As shown, in order to make the photodetector have a better working range, the above-mentioned semiconductor packaging structure can also include a second supporting part 120 and a second super lens head 130, wherein the above-mentioned second supporting part 120 is located on the printed circuit board 20 and surrounds the photodetector chip 50; the above-mentioned second super lens head 130 is located on the side of the second supporting part 120 away from the printed circuit board 20, and a second sealed cavity is provided between the second supporting part 120, the second super lens head 130 and the semiconductor substrate, and the photodetector chip 50 is located in the second sealed cavity.

[0054] In the above embodiment, the first sealed cavity and the second sealed cavity are separated from each other. Optionally, the materials of the first support portion 80 and the second support portion 120 can be molding materials. Optionally, the second metal lens head 130 can adopt a multivariable optical element (MOE), wherein, since the unit structure of the second metal lens head 130 is usually at the half-wavelength level, exemplarily, the second metal lens head 130 can have a microstructure, which can be set to a cylindrical, square, diamond-shaped column and other shapes, and further, the second metal lens head 130 can be adjusted by using different shapes and different sizes (including height) to achieve the purpose of different phase modulation for light in different regions. Exemplarily, the height of each microstructure in the second metal lens head 130 can be consistent, and the gaps between adjacent microstructures are inconsistent. Further, the gaps between adjacent microstructures can be set to be smaller than the gaps of the wavelength level, so as to achieve diffraction of light. Through diffraction, the adjustment of light can be achieved, including adjusting the phase of the light and / or adjusting the angle of the light.

[0055] Likewise, in some optional embodiments, such as Figure 3 As shown, the semiconductor package structure further includes a plurality of second electronic components 100. In order to reduce the package size of the semiconductor package structure, the molded package body 10 has a plurality of third receiving grooves. The printed circuit board 20 covers the plurality of third receiving grooves, and the plurality of electronic components are located in the plurality of third receiving grooves. Each second electronic component 100 is in contact with the printed circuit board 20. The plurality of second electronic components 100 correspond to the plurality of third receiving grooves one by one. Each second electronic component 100 completely fills each third receiving groove. The photodetector chip 50 has a fourth projection on the molded package body 10. Each second electronic component 100 has a fifth projection on the molded package body 10. The fourth projection and the fifth projection do not overlap. Optionally, as Figure 3 As shown, the driver chip 40 may be located in the molded package 10 between the semiconductor laser chip 30 and the photodetector chip 50. Optionally, the driver chip 40 may also be located in the molded package 10 on the side of the semiconductor laser chip 30 away from the photodetector chip 50, as shown in FIG. Figure 6 shown.

[0056] Furthermore, in the D-ToF scheme, due to the fast speed of light, the daily receiving time is generally in the sub-nanosecond level, and the detector is required to respond immediately when the photon arrives. Therefore, the single photon avalanche diode (SPAD) or avalanche photodiode (APD) is usually selected in the D-ToF scheme. Among them, the SPAD chip is a device that can generate a response current in sub-nanosecond time. Its working principle is to use a reverse biased photodiode to operate in a very small voltage range that exceeds the breakdown voltage but has not yet broken down. At this time, the diode is in a very sensitive working range, so as long as there is a weak light signal, it can trigger it to generate an avalanche current, and the response speed is extremely fast. Therefore, it is easy for a single free electron to trigger counting in the avalanche region of the SPAD chip, resulting in erroneous counting. The SPAD chip is greatly affected by dark noise. The inventors also found that the dark counts are caused by the free electrons generated by heat inside the detector. This phenomenon occurs in SPAD chips manufactured through manufacturing and doping processes because the shockley-read-hall (SRH) defect exists inside the device, which has a stronger ability to release and capture carriers. Therefore, in deep submicron (Deep Sub-micron (DSM) CMOS has a common voltage drop that requires a higher doping concentration and a smaller PN junction size, which may lead to a higher defect density and a stronger accelerating electric field, making the dark count effect more obvious. Therefore, in the above-mentioned embodiment, the projection area of ​​the photodetector chip 50 on the printed circuit board 20 or the molded package 10 corresponds to the thermally sensitive area of ​​the photodetector chip 50, so that when a plurality of second electronic components 100 are located in the thermally sensitive area of ​​the above-mentioned photodetector chip 50, the above-mentioned plurality of second electronic components 100 will affect the photodetector chip 50, making the dark count effect of the photodetector chip 50 more obvious. Therefore, when the projection of the above-mentioned photodetector chip 50 on the molded package 10 is the fourth projection, and the projection of each second electronic component 100 on the molded package 10 is the fifth projection, the fourth projection and the fifth projection do not overlap, such as Figure 5 Shown and Figure 7 As shown, the second electronic component 100 is prevented from being located in a heat sensitive area of ​​the photodetector chip 50 .

[0057] Optionally, when the projection of the semiconductor laser chip 30 on the molded package 10 is the first projection, the projection of the photodetector chip 50 on the molded package 10 is the fourth projection, and the projection of the driver chip 40 on the molded package 10 is the second projection, the second projection is located between the first projection (located in the dotted frame between the driver chip 40 and the first electronic component 70) and the fourth projection (located in the dotted frame between the driver chip 40 and the second electronic component 100), as shown in FIG. Figure 5 As shown, or the second projection is located on the side of the first projection (located in the dotted frame between the driving chip 40 and the first electronic component 70) away from the fourth projection, as shown Figure 7 As shown, optionally, the distance between the second projection and the first projection is smaller than the distance between the second projection and the fourth projection. That is, the first electronic component 70 is used as the electronic component of the projection end in the semiconductor package structure, and the second electronic component 100 is used as the electronic component of the receiving end in the semiconductor package structure. Through the above arrangement, the first electronic component 70 and the second electronic component 100 can be arranged according to the principle of proximity, so that the line of the first electronic component 70 belonging to the projection end is shorter, and the line of the second electronic component 100 belonging to the receiving end is shorter, so that the impedance generated in the line is less, thereby improving the signal accuracy.

[0058] Optionally, the third projection of each first electronic component 70 on the molded package 10 may be located on a side of the first projection away from the fourth projection, and the fifth projection of each second electronic component 100 on the molded package 10 may be located on a side of the fourth projection away from the first projection. Optionally, the distance between the first projection and the third projection is smaller than the distance between the first projection and the fifth projection, and the distance between the fourth projection and the fifth projection is smaller than the distance between the fourth projection and the third projection.

[0059] The semiconductor laser chip 30 may include but is not limited to a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL), a laser diode (LD), etc., and the photodetector chip 50 may include but is not limited to a photodiode (PD), an avalanche photodiode (APD), and a single photon avalanche photodiode (SPAD), etc. In some optional embodiments, since the vertical cavity surface emitting laser has the advantages of high modulation rate, good coupling characteristics with the light front, low energy consumption and low production cost, and the single electron avalanche diode has the advantages of high sensitivity, high resolution and low noise, the semiconductor laser chip 30 may be a vertical cavity surface emitting laser, and the photodetector chip 50 may be a single electron avalanche diode.

[0060] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:

[0061] A molded package is used as a heat dissipation substrate in a semiconductor packaging structure, so that a printed circuit board is located on a partial surface of the molded package, so as to achieve the purpose of conducting heat generated by a semiconductor device located on the printed circuit board and preventing the heat from damaging the semiconductor device. A semiconductor laser chip electrically connected to the printed circuit board is arranged on an exposed surface of the printed circuit board on a side away from the molded package and / or on an exposed surface of the molded package. A driver chip is located in a first receiving groove in the molded package, and the driver chip is in contact with the printed circuit board. As a result, the molded package formed for packaging semiconductor devices can cover the driver chip, thereby improving the stability of the driver chip in the semiconductor packaging structure and the packaging strength of the driver chip. In addition, as the driver chip is completely filled in the first receiving groove in the molded package, the driver chip and the molded package are integrated, which avoids the driver chip and the heat dissipation substrate of the semiconductor packaging structure occupying different packaging areas in the semiconductor packaging structure respectively, so that the driver chip and the molded package have a common occupied area in the semiconductor packaging structure, thereby achieving the purpose of reducing the size of the semiconductor packaging structure.

[0062] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A semiconductor packaging structure, characterized in that: include: A semiconductor substrate, comprising a printed circuit board and a molded package, wherein the printed circuit board is located on a portion of the surface of the molded package, and the molded package has a first receiving groove, and the printed circuit board covers the first receiving groove; a semiconductor laser chip, located on one side of the exposed surface of the printed circuit board or on one side of the exposed surface of the molded package, and the semiconductor laser chip is electrically connected to the printed circuit board; A driving chip is located in the first receiving groove and is electrically connected to the printed circuit board, wherein the driving chip completely fills the first receiving groove.

2. The semiconductor package structure according to claim 1, wherein: The semiconductor laser chip has a first projection on the molded package, and the driving chip has a second projection on the molded package, and the first projection does not overlap with the second projection.

3. The semiconductor package structure according to claim 1, wherein: Also includes: A metal substrate is located between the semiconductor laser chip and the printed circuit board or between the semiconductor laser chip and the molded package, wherein when the semiconductor laser chip is located on one side of the exposed surface of the printed circuit board, the metal substrate is located between the semiconductor laser chip and the printed circuit board, and when the semiconductor laser chip is located on one side of the exposed surface of the molded package, the metal substrate is located between the semiconductor laser chip and the molded package.

4. The semiconductor package structure according to claim 1, wherein: The molded package body has a plurality of second receiving grooves, the printed circuit board covers the plurality of second receiving grooves, and the semiconductor package structure further includes: A plurality of first electronic components are located in a plurality of the second receiving grooves, each of the first electronic components is electrically connected to the printed circuit board, the plurality of the first electronic components correspond one-to-one to the plurality of the second receiving grooves, each of the first electronic components completely fills each of the second receiving grooves, and the semiconductor laser chip has a first projection on the molded package, each of the first electronic components has a third projection on the molded package, and the first projection and the third projection do not overlap.

5. The semiconductor package structure according to claim 1, wherein: Also includes: A first supporting portion is located on the exposed surface of the printed circuit board and surrounds the semiconductor laser chip; The first metal lens is located on a side of the first support portion away from the printed circuit board, and a first sealed cavity is provided between the first metal lens, the first support portion and the semiconductor substrate, and the semiconductor laser chip is located in the first sealed cavity.

6. The semiconductor package structure according to any one of claims 1 to 5, characterized in that: Also includes: The photodetector chip is located on the exposed surface of the printed circuit board and is spaced apart from the semiconductor laser chip. When the semiconductor packaging structure includes a first supporting portion, the first supporting portion is spaced apart from the photodetector chip.

7. The semiconductor package structure according to claim 6, characterized in that: A straight line passing through the center of the photodetector chip and parallel to the exposed surface of the printed circuit board is a first center line, a straight line passing through the center of the semiconductor laser chip and parallel to the exposed surface of the printed circuit board is a second center line, and the first center line and the second center line are collinear.

8. The semiconductor package structure according to claim 6, wherein: Also includes: A second supporting portion is located on the printed circuit board and surrounds the photodetector chip; The second super lens is located on the side of the second support portion away from the printed circuit board, and a second sealed cavity is provided between the second support portion, the second super lens and the semiconductor substrate, and the photodetector chip is located in the second sealed cavity.

9. The semiconductor package structure according to claim 6, wherein: The molded package body has a plurality of third receiving grooves, the printed circuit board covers the plurality of third receiving grooves, and the semiconductor package structure further includes: A plurality of second electronic components are located in the plurality of third receiving grooves, each of the second electronic components is in contact with the printed circuit board, the plurality of second electronic components correspond one-to-one to the plurality of third receiving grooves, each of the second electronic components completely fills each of the third receiving grooves, and the photodetector chip has a fourth projection on the molded package body, each of the second electronic components has a fifth projection on the molded package body, and the fourth projection and the fifth projection do not overlap.

10. The semiconductor package structure according to claim 6, wherein: The semiconductor laser chip includes a vertical cavity surface emitting laser, and the photodetector chip includes a single electron avalanche diode.

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