Reaction chamber, film thickness consistency monitoring method and film deposition equipment

Abstract

The invention discloses a reaction cavity, a film thickness consistency monitoring method and film deposition equipment, the reaction cavity comprises a first cavity, a second cavity, an extraction opening, a first film thickness sensor and a second film thickness sensor, the extraction opening is arranged between the first cavity and the second cavity, the first film thickness sensor is arranged between the first cavity and the second cavity, and the second film thickness sensor is arranged between the first cavity and the second cavity. The first film thickness sensor is arranged in the first cavity and is adjacent to the extraction opening, and the second film thickness sensor is arranged in the second cavity and is adjacent to the extraction opening. The method comprises the following steps: acquiring a first film thickness detected by a first film thickness sensor and a second film thickness detected by a second film thickness sensor; and comparing the first thin film thickness with the second thin film thickness to determine a film thickness difference between the first thin film thickness and the second thin film thickness. According to the invention, the real-time online monitoring of the two-cavity film forming thickness is realized, the measurement time is greatly saved, the process development progress is accelerated, and the improvement of the consistency of the two-cavity film thickness expression is assisted.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a reaction chamber, a film thickness consistency monitoring method, and a film deposition device. Background Art

[0002] With the rapid development of semiconductor technology, the miniaturization and integration of devices are constantly improving, and the productivity and quality requirements of semiconductor thin film processes are becoming increasingly stringent. In the field of high-end semiconductor manufacturing, two-chamber isolation coating equipment is favored because it can effectively improve production efficiency. For two-chamber isolation coating equipment, the symmetry of the chamber structure design, the accuracy of material processing inside the chamber, and different batches of materials will affect the consistency of deposited films between chambers. Therefore, in practical applications, ensuring the consistency of the thickness and performance of the film produced by the two-chamber coating equipment has become one of the key factors restricting technological improvement. To achieve this goal, the measurement of film thickness has become crucial. However, traditional film thickness measurement methods mostly use offline measurement, that is, after completing the coating process, the wafer needs to be transferred from the coating equipment to a special measuring device for detection, which takes a long time. Especially in the early stage of new process development, it takes a long time to run the entire process flow and subsequent measurements, which accounts for a large proportion of the development progress of the entire equipment process. Summary of the invention

[0003] The embodiments of the present invention provide a reaction chamber, a method for monitoring the consistency of film thickness, and a film deposition device, aiming to solve the problem that the existing film thickness measurement takes a long time.

[0004] In a first aspect, the present invention provides a reaction chamber, comprising: a first cavity, a second cavity, a gas exhaust port, a first film thickness sensor, and a second film thickness sensor, wherein the gas exhaust port is arranged between the first cavity and the second cavity, the first film thickness sensor is arranged in the first cavity and adjacent to the gas exhaust port, and the second film thickness sensor is arranged in the second cavity and adjacent to the gas exhaust port.

[0005] Furthermore, the reaction chamber also includes a first air intake valve and a second air intake valve, wherein the first air intake valve is connected to the first cavity and is used to adjust the air intake flow of the first cavity, and the second air intake valve is connected to the second cavity and is used to adjust the air intake flow of the second cavity.

[0006] Furthermore, the reaction chamber also includes a first air inlet pipeline and a second air inlet pipeline, the first air inlet pipeline is connected to the first cavity, the second air inlet pipeline is connected to the second cavity, the first air inlet valve is arranged at one end of the first air inlet pipeline close to the first cavity, and the second air inlet valve is arranged at one end of the second air inlet pipeline close to the second cavity.

[0007] Further, the first film thickness sensor is plugged into the bottom of the cavity, and the probe surface of the first film thickness sensor is exposed in the first cavity; and the second film thickness sensor is plugged into the bottom of the cavity, and the probe surface of the second film thickness sensor is exposed in the second cavity; and / or,

[0008] A first baffle is provided on the top of the first cavity, the first film thickness sensor is plugged into the first baffle, and the probe surface of the first film thickness sensor is exposed in the first cavity; and a second baffle is provided on the top of the second cavity, the second film thickness sensor is plugged into the second baffle, and the probe surface of the second film thickness sensor is exposed in the second cavity.

[0009] Further, the position of the first film thickness sensor in the first cavity is symmetrical to the position of the second film thickness sensor in the second cavity.

[0010] Furthermore, both the first film thickness sensor and the second film thickness sensor are quartz crystal oscillators.

[0011] In a second aspect, the present invention further provides a method for monitoring film thickness consistency, which is applied to the above-mentioned reaction chamber, and the method comprises:

[0012] Acquire a first film thickness detected by the first film thickness sensor and a second film thickness detected by the second film thickness sensor;

[0013] The first film thickness is compared to the second film thickness to determine a film thickness difference between the first film thickness and the second film thickness.

[0014] Furthermore, the first intake valve and / or the second intake valve are adjusted according to the film thickness difference.

[0015] Furthermore, the intake flow to be adjusted is determined according to the film thickness difference; the intake flow to be adjusted is input into a preset flow adjustment formula for calculation to output a flow capacity value corresponding to the first intake valve and / or the second intake valve; and the first intake valve and / or the second intake valve are adjusted according to the flow capacity value.

[0016] In a third aspect, the present invention further provides a thin film deposition device, comprising a reaction chamber, wherein the reaction chamber is the above-mentioned reaction chamber, and the reaction chamber is monitored by the above-mentioned thin film thickness consistency monitoring method.

[0017] The present invention provides a reaction chamber, a method for monitoring the consistency of film thickness, and a thin film deposition device. The reaction chamber comprises: a first cavity, a second cavity, a gas suction port, a first film thickness sensor, and a second film thickness sensor. The gas suction port is arranged between the first cavity and the second cavity. The first film thickness sensor is arranged in the first cavity and adjacent to the gas suction port, so that the reaction gas can pass through the probe surface of the first film thickness sensor, so that a thin film is deposited on the probe surface, thereby measuring the thickness of the first film. Similarly, the second film thickness sensor is arranged in the second cavity and adjacent to the gas suction port, so that the reaction gas can pass through the probe surface of the second film thickness sensor, so that a thin film is deposited on the probe surface, thereby measuring the thickness of the second film. Real-time online monitoring of the film thickness of the two cavities is realized, which greatly saves the measurement time, speeds up the process development progress, and assists in improving the consistency of the film thickness performance of the two cavities. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0019] Figure 1 A schematic diagram of a reaction chamber according to an embodiment of the present invention is shown;

[0020] Figure 2 A schematic diagram of a reaction chamber according to another embodiment of the present invention is shown;

[0021] Figure 3 A schematic diagram of the steps of the method for monitoring the consistency of film thickness according to an embodiment of the present invention is shown;

[0022] Figure 4 A schematic flow chart showing the steps of a method for monitoring film thickness consistency according to another embodiment of the present invention is shown;

[0023] Figure 5 A schematic flow chart of sub-steps of a method for monitoring film thickness consistency according to an embodiment of the present invention is shown;

[0024] Reference numerals:

[0025] 1. First cavity; 2. Second cavity; 3. Air extraction port; 4. First film thickness sensor; 5. Second film thickness sensor; 6. Heating plate; 7. First air inlet pipeline; 71. First air inlet valve; 8. Second air inlet pipeline; 81. Second air inlet valve. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] The directional terms mentioned in the present invention, such as "upper", "lower", "front", "back", "left", "right", "inner", "outer", "side", etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but are not used to limit the present invention. In addition, in the drawings, structures with similar or identical structures are represented by the same reference numerals.

[0028] Dual-chamber thin film deposition equipment is highly favored in the semiconductor industry due to its high production efficiency. However, although this equipment can significantly increase production, in actual operation, the thickness of the thin films deposited by the two chambers is often inconsistent, and this thickness difference may affect the performance and quality of the final product. In order to ensure the consistency of the thin films deposited in the two chambers, effective measures must be taken to monitor and control the film deposition process. Especially in the early stages of new process development, the measured results are often different from the expected results, so it is often necessary to measure the results and then conduct feedback optimization. The measurement of film thickness requires running the entire process flow, and then transporting the film to a dedicated measuring machine for film thickness measurement to know whether the film thickness of the two chambers is consistent. This takes a long time and delays the progress of process development.

[0029] To this end, the embodiments of the present invention solve the problem that the existing thin film thickness measurement takes a long time by providing a reaction chamber, a thin film thickness consistency monitoring method, and a thin film deposition device. By using two film thickness sensors to respectively detect the thickness of the thin films deposited in the two chambers, the film thickness can be monitored online to help improve the consistency of the film thickness of the two chambers.

[0030] In order to solve the problem of long film thickness measurement time, the embodiment of the present invention has the following specific ideas:

[0031] Film thickness sensors are respectively set in the two chambers, and the two film thickness sensors are close to the exhaust port. During the thin film deposition, the process gas can pass through the probe surface of the two film thickness sensors, and part of the film will be deposited on the probe surface, so the film thickness sensor can detect the film thickness. For dual-chamber thin film deposition equipment, under normal circumstances, the thickness of the film deposited in the two chambers should be consistent, so the film thickness detected by the two film thickness sensors should also be consistent. If the film thickness detected by the two film thickness sensors is inconsistent, it means that the thickness of the film deposited in the two chambers is inconsistent, so the film thickness inconsistency of the two chambers can be detected in advance through the film thickness sensor, without running the entire process and then sending it to the measuring machine for measurement, which greatly shortens the measurement time and speeds up the progress of process development.

[0032] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0033] See also Figure 1-Figure 2 An embodiment of the present invention shows a reaction chamber, comprising: a first chamber 1, a second chamber 2, a gas exhaust port 3, a first film thickness sensor 4 and a second film thickness sensor 5, wherein the gas exhaust port 3 is arranged between the first chamber 1 and the second chamber 2, the first film thickness sensor 4 is arranged in the first chamber 1 and adjacent to the gas exhaust port 3, and the second film thickness sensor 5 is arranged in the second chamber 2 and adjacent to the gas exhaust port 3.

[0034] Specifically, the reaction chamber of the present embodiment is a double-chamber structure, including a first chamber 1 and a second chamber 2, the first chamber 1 and the second chamber 2 are arranged adjacent to each other, and an exhaust channel is arranged at the junction of the first chamber 1 and the second chamber 2, and the end of the exhaust channel is an exhaust port 3, and the exhaust port 3 is located in the middle of the first chamber 1 and the second chamber 2, that is, half of the exhaust port 3 is located in the first chamber 1, and the other half is located in the second chamber 2. The first film thickness sensor 4 is arranged in the first chamber 1, and the second film thickness sensor 5 is arranged in the second chamber 2, and the first film thickness sensor 4 and the second film thickness sensor 5 are both arranged near the exhaust port 3. In this way, when the exhaust channel generates a negative pressure, the process gas is sucked into the exhaust port 3, and the first film thickness sensor 4 and the second film thickness sensor 5 are near the exhaust port 3, so the process gas can pass through the probe surfaces of the first film thickness sensor 4 and the second film thickness sensor 5, and then a part of the film will be deposited on the probe surface, and the first film thickness sensor 4 and the second film thickness sensor 5 can respectively detect the thickness of the film deposited on the probe surface. The first film thickness sensor 4 and the second film thickness sensor 5 adopt non-contact sensors. In this embodiment, the first film thickness sensor 4 and the second film thickness sensor 5 both adopt quartz crystal oscillators. It should be noted that there are many types of film thickness sensors, such as capacitive and infrared reflective types. No matter what kind of film thickness sensor, as long as it can measure the film thickness, it is not limited here. Although the first film thickness sensor 4 and the second film thickness sensor 5 do not directly measure the thickness of the film deposited on the surface of the wafer, by comparing whether the film thickness detected by the first film thickness sensor 4 and the second film thickness sensor 5 is consistent, it can be detected whether the thickness of the film deposited by the two cavities on the surface of the wafer is consistent, that is, it can indirectly reflect the consistency of the film thickness of the two cavities. This is because if the thickness of the film deposited in the two cavities is consistent, then the film thickness detected by the two film thickness sensors should also be consistent; and if the thickness of the film deposited in the two cavities is inconsistent, then the film thickness detected by the two film thickness sensors must be inconsistent. Therefore, the consistency of the film thickness of the two cavities can be judged by comparing the film thickness detected by the two film thickness sensors, thereby assisting in improving the consistency of the film thickness of the two cavities.

[0035] Through this embodiment, by setting two film thickness sensors near the exhaust port 3 in the middle of the two cavities to measure the film thickness, the film thickness can be characterized online, the thickness performance of the two-cavity films can be monitored in real time, and the consistency of the performance of the two-cavity films can be improved.

[0036] In one embodiment, the reaction chamber further includes a first air intake valve 71 and a second air intake valve 81. The first air intake valve 71 is connected to the first cavity 1 and is used to adjust the air intake flow of the first cavity 1. The second air intake valve 81 is connected to the second cavity 2 and is used to adjust the air intake flow of the second cavity 2. Specifically, the reaction chamber of this embodiment is a dual-cavity structure, and therefore has two air intake pipelines, namely, a first air intake pipeline 7 and a second air intake pipeline 8. The first air intake pipeline 7 is the air intake pipeline of the first cavity 1, and the second air intake pipeline 8 is the air intake pipeline of the second cavity 2. The first air intake pipeline 7 is provided with a first air intake valve 71, and the first air intake valve 71 can adjust the air intake flow of the first cavity 1. The second air intake pipeline 8 is provided with a second air intake valve 81, and the second air intake valve 81 can adjust the air intake flow of the second cavity 2. It should be noted that the first air intake valve 71 and the second air intake valve 81 can be various types of valves, which are not limited here. By controlling the air intake flow rate, the deposition rate of the thin film can be changed, thereby affecting the thickness of the thin film deposition. Therefore, when the film thickness of the two chambers is detected to be inconsistent, the process can be corrected in time. The air intake flow rate of the first chamber 1 or the second chamber 2 can be changed by adjusting the first air intake valve 71 or the second air intake valve 81 to control the deposition rate of the thin film in the two chambers, thereby maintaining the consistency of the film thickness of the two chambers.

[0037] In this embodiment, the reaction chamber further includes a first air inlet pipeline 7 and a second air inlet pipeline 8, wherein the first air inlet pipeline 7 is connected to the first cavity 1, and the second air inlet pipeline 8 is connected to the second cavity 2. The first air inlet valve 71 is arranged at one end of the first air inlet pipeline 7 close to the first cavity 1, and the second air inlet valve 81 is arranged at one end of the second air inlet pipeline 8 close to the second cavity 2. Specifically, the end of the first air inlet pipeline 7 close to the first cavity 1 is the proximal end, and the end away from the first cavity 1 is the distal end. The end of the second air inlet pipeline 8 close to the second cavity 2 is the proximal end, and the end away from the second cavity 2 is the distal end. The first air inlet valve 71 is arranged at the proximal end, that is, close to the first cavity 1, and similarly, the second air inlet valve 81 is also arranged at the proximal end, that is, close to the second cavity 2. The purpose of this setting is to facilitate the close-range regulation of the intake flow rate. On the one hand, when the valve is installed close to the cavity, the distance from the valve to the cavity is shorter, which can reduce the time delay for the gas to reach the cavity from the valve, which means that once the valve is adjusted, the change in flow rate will be quickly reflected inside the cavity, so that it can respond to process requirements more quickly; on the other hand, setting the valve close to the cavity can reduce the dead zone and retention space in the pipeline, which can reduce the flow fluctuation caused by the retention of gas in the long pipeline. In addition, a slight adjustment of the valve can directly affect the flow change in the cavity, thereby improving the accuracy of flow control; on the other hand, when the valve is close to the cavity, the loss of gas in the transmission process is reduced. A longer pipeline may cause some gas to fail to enter the cavity in time, especially when the flow rate needs to be adjusted frequently. The loss of this part of gas will affect the overall flow rate.

[0038] In one embodiment, the first film thickness sensor 4 is plugged into the bottom of the cavity, and the probe surface of the first film thickness sensor 4 is exposed in the first cavity 1; and the second film thickness sensor 5 is plugged into the bottom of the cavity, and the probe surface of the second film thickness sensor 5 is exposed in the second cavity 2.

[0039] Specifically, there are multiple ways to install the first film thickness sensor 4 and the second film thickness sensor 5 in the first cavity 1 and the second cavity 2, respectively, and this embodiment proposes a better installation method. Specifically, the first film thickness sensor 4 and the second film thickness sensor 5 are in the shape of a long strip as a whole. The first film thickness sensor 4 is inserted into the interior of the first cavity 1 from the bottom of the first cavity 1, and the probe surface of the first film thickness sensor 4 passes through the cavity to the interior of the first cavity 1, and the probe surface of the first film thickness sensor 4 is exposed in the first cavity 1, so that its probe surface can be deposited on a thin film in the cavity. Similarly, the second film thickness sensor 5 is inserted into the interior of the second cavity 2 from the bottom of the second cavity 2, and the probe surface of the second film thickness sensor 5 passes through the cavity to the interior of the second cavity 2, and the probe surface of the second film thickness sensor 5 is exposed in the second cavity 2, so that its probe surface can be deposited on a thin film in the cavity.

[0040] In one embodiment, a first baffle is provided on the top of the first cavity 1, the first film thickness sensor 4 is plugged into the first baffle, and the probe surface of the first film thickness sensor 4 is exposed in the first cavity 1; and a second baffle is provided on the top of the second cavity 2, the second film thickness sensor 5 is plugged into the second baffle, and the probe surface of the second film thickness sensor 5 is exposed in the second cavity 2. Specifically, there are multiple ways to install the first film thickness sensor 4 and the second film thickness sensor 5 in the first cavity 1 and the second cavity 2, respectively, and this embodiment proposes another preferred installation method. Specifically, the first film thickness sensor 4 and the second film thickness sensor 5 are in the shape of a long strip as a whole. The first cavity 1 has a first baffle, which is arranged above the first cavity 1. The second cavity 2 has a second baffle, which is arranged above the second cavity 2. The first film thickness sensor 4 is inserted into the first cavity 1 from the first baffle, and the probe surface of the first film thickness sensor 4 passes through the first baffle and comes to the interior of the first cavity 1. The surface of the first film thickness sensor 4 is exposed in the first cavity 1, so that its probe surface can be deposited on a thin film in the cavity. Similarly, the second film thickness sensor 5 is inserted into the second cavity 2 from the second baffle, and the probe surface of the second film thickness sensor 5 passes through the second baffle and reaches the interior of the second cavity 2. The surface of the second film thickness sensor 5 is exposed in the second cavity 2, so that its probe surface can be deposited on a thin film in the cavity.

[0041] In one embodiment, the position of the first film thickness sensor 4 in the first cavity 1 is symmetrical to the position of the second film thickness sensor 5 in the second cavity 2. Specifically, the first film thickness sensor 4 and the second film thickness sensor 5 are arranged at symmetrical positions in the two cavities to ensure that the positions of the two in various cavities are consistent, so that the thickness of the film deposited on the probe surface is consistent, and the position factor is prevented from disturbing the monitoring result.

[0042] In summary, by using the two film thickness sensors of this embodiment to respectively detect the film thickness in the two cavities, the film thickness can be characterized online, the film thickness performance of the two chambers can be monitored in real time, the process can be corrected in time, and the consistency of the film performance of the two chambers can be improved; when the film thickness is inconsistent, it can be detected in time, saving time, especially for process development during the exploration period, avoiding the need to run the entire process flow before measuring, thereby speeding up the development progress.

[0043] Reference Figure 3 The embodiment of the present invention also provides a film thickness consistency monitoring method, which is applied to the reaction chamber of the above embodiment. The reaction chamber has been described in detail in the above embodiment, and for the sake of brevity, it will not be repeated here. The method includes steps: S1-S2.

[0044] S1, obtaining a first film thickness detected by a first film thickness sensor 4 and a second film thickness detected by a second film thickness sensor 5;

[0045] S2. Compare the first film thickness with the second film thickness to determine a film thickness difference between the first film thickness and the second film thickness.

[0046] In this embodiment, the first film thickness sensor 4 and the second film thickness sensor 5 are both connected to the controller, and the controller can receive the film thickness data detected by the first film thickness sensor 4 and the second film thickness sensor 5 and perform corresponding analysis and processing. The controller is also connected to the first air intake valve 71 and the second air intake valve 81, and can control and adjust the first air intake valve 71 and the second air intake valve 81. The controller is also connected to the display, and the film thickness data detected by the first film thickness sensor 4 and the second film thickness sensor 5 can be displayed on the display, so that the tester can know the current film thickness performance of the two chambers in real time.

[0047] The probe surface of the first film thickness sensor 4 has a portion of thin film deposited in the first cavity 1 so as to detect the first film thickness. Similarly, the probe surface of the second film thickness sensor 5 has a portion of thin film deposited in the second cavity 2 so as to detect the second film thickness. It should be noted that the thin film deposited on the probe surfaces of the first film thickness sensor 4 and the second film thickness sensor 5 can be purged away by the purge gas during the cavity cleaning process, so that during the next wafer process, the probe surface can still have a portion of thin film deposited, and the first film thickness and the second film thickness can still be detected to meet the detection requirements of the next wafer process. The first film thickness sensor 4 and the second film thickness sensor 5 of this embodiment use a quartz crystal oscillator. The detection principle of the quartz crystal oscillator mainly utilizes two effects of quartz crystal, namely, piezoelectric effect and mass load effect. Quartz crystal is an ionic crystal. Due to the regular distribution of the crystal lattice, when mechanical deformation occurs, such as stretching or compression, an electric polarization phenomenon can be generated, which is called piezoelectric phenomenon. When a quartz crystal is under a pressure of 9.8×104Pa, positive and negative charges appear on the two surfaces under pressure, generating a potential difference of about 0.5V. The piezoelectric phenomenon has an inverse phenomenon, that is, the size of the quartz crystal will change, stretch or shorten in an electric field. This phenomenon is called electrostriction. The natural frequency of the piezoelectric effect of quartz crystal depends not only on its geometric dimensions and cutting type, but also on the thickness of the chip. When a certain film layer is coated on the chip, the thickness of the chip increases, and the natural frequency of the chip will decay accordingly. This effect of quartz crystal is the mass load effect. Quartz crystal film thickness monitoring is to monitor the thickness of the deposited film by measuring the change of frequency or frequency-related parameters. The following formula can be used as a reference:

[0048]

[0049] Among them, ρ M is the film density, ρ Q is the density of quartz, f is the natural frequency of the quartz crystal, N is the frequency constant that depends on the geometric size and cutting type of the quartz crystal, Δd M Change in film thickness. After detecting the first film thickness and the second film thickness, the first film thickness is compared with the second film thickness to calculate the difference, that is, the first film thickness is subtracted from the second film thickness to obtain the film thickness difference. The consistency of the film thickness of the two cavities can be judged by the film thickness difference. If the film thickness difference is close to zero, it means that the film thickness of the two cavities is consistent. If the film thickness difference is greater than the film thickness difference threshold, it means that the film thickness of the two cavities is inconsistent, which promptly prompts the R&D personnel to make design adjustments. The R&D personnel can adjust the process parameters or cavity structure in time to continue to optimize, without having to run the entire process to measure the film thickness, which speeds up the product development progress.

[0050] In one embodiment, if Figure 4As shown, the film thickness consistency monitoring method also includes step: S3.

[0051] S3. Adjust the first air intake valve 71 and / or the second air intake valve 81 according to the film thickness difference.

[0052] Specifically, when the film thickness difference is greater than the film thickness difference threshold, the film thickness of the two cavities is inconsistent, and the process parameters need to be adjusted at this time. This embodiment is achieved by controlling the first air intake valve 71 and the second air intake valve 81, because the first air intake valve 71 and the second air intake valve 81 can change the air intake flow of the first cavity 1 and the second cavity 2, thereby changing the first film thickness and the second film thickness. Specifically, if the detected first film thickness is greater than the second film thickness, then the second air intake valve 81 is adjusted to increase the air intake flow of the second cavity 2 and increase the second film thickness, so that the adjusted second film thickness is consistent with the first film thickness. If the detected first film thickness is less than the second film thickness, then the first air intake valve 71 is adjusted to increase the air intake flow of the first cavity 1 and increase the first film thickness, so that the adjusted first film thickness is consistent with the second film thickness. Among them, the adjustment degree of the first air intake valve 71 and the second air intake valve 81 is determined by the film thickness difference value. The larger the film thickness difference value, the greater the adjustment degree. On the contrary, the smaller the film thickness difference value, the smaller the adjustment degree. Through the feedback adjustment mechanism of this embodiment, the cavity with a smaller film thickness is compensated, so that the film thickness of the two cavities is kept as consistent as possible.

[0053] In one embodiment, if Figure 5 As shown, the step S3 includes: S31-S33.

[0054] S31, determining the intake air flow to be adjusted according to the film thickness difference;

[0055] S32, inputting the intake flow to be adjusted into a preset flow adjustment formula for calculation to output the flow capacity value corresponding to the first intake valve 71 and / or the second intake valve 81;

[0056] S33. Adjust the first intake valve and / or the second intake valve according to the flow capacity value.

[0057] Specifically, first, the intake flow rate to be adjusted is calculated based on the film thickness difference, that is, the intake flow rate required to compensate for the sufficient film thickness difference is calculated. There is a corresponding relationship between the intake flow rate and the thickness of the deposited film, which can be measured in the experiment. After determining the intake flow rate to be adjusted, the first intake valve 71 or the second intake valve 81 can be adjusted according to the intake flow rate to be adjusted, specifically, the flow capacity value of the valve is adjusted, that is, the CV value. The CV value refers to the volume flow rate or mass flow rate of the pipeline medium flowing through the valve under the test conditions per unit time, maintaining a constant pressure in the pipeline. In other words, the flow capacity of the valve. Simply put, the CV value is used to measure the valve pass coefficient. By reducing the CV value, the gas can be restricted from entering the chamber. By increasing the CV value, the gas can be increased to enter the chamber, thereby affecting the film thickness. The CV value can be calculated by inputting the intake flow rate to be adjusted into the preset flow adjustment formula. Among them, the preset flow adjustment formula is as follows:

[0058]

[0059] Among them, is the flow capacity value, Q is the flow rate in gallons per minute, is the pressure drop on the valve, and G is the specific gravity of the fluid. The CV value can be calculated by the above preset flow adjustment formula, and the CV value can be adjusted by turning the adjustment device on the valve. After the CV value is adjusted, the thickness of the film deposited in the first cavity 1 tends to be consistent with the thickness of the film deposited in the second cavity 2, ensuring the consistency of the film thickness of the two cavities.

[0060] To summarize, in this embodiment, the first film thickness sensor 4 is arranged in the first cavity 1 and adjacent to the exhaust port 3, so that the reaction gas can pass through the probe surface of the first film thickness sensor 4, so that a thin film is deposited on the probe surface, thereby the first film thickness can be measured. Similarly, the second film thickness sensor 5 is arranged in the second cavity 2 and adjacent to the exhaust port 3, so that the reaction gas can pass through the probe surface of the second film thickness sensor 5, so that a thin film is deposited on the probe surface, thereby the second film thickness can be measured, thereby realizing real-time online monitoring of the film thickness of the two cavities, and comparing the first film thickness and the second film thickness to obtain the film thickness difference value. The film thickness difference value can be used to show whether the film thickness of the two cavities is consistent, and the film thickness performance of the two cavities can be known in real time, without having to run the entire process flow before measuring the film thickness, which greatly saves the measurement time, speeds up the process development progress, and helps to improve the consistency of the film thickness performance of the two cavities.

[0061] An embodiment of the present invention further provides a thin film deposition device, comprising a reaction chamber, wherein the reaction chamber is the reaction chamber of the above embodiment, and the reaction chamber is monitored by the thin film thickness consistency monitoring method of the above embodiment.

[0062] Through this embodiment, the film thickness consistency monitoring method of this embodiment is used to monitor the reaction chamber, which can realize real-time online monitoring of the film thickness of the two chambers, greatly save measurement time, speed up process development progress, and assist in improving the consistency of the film thickness performance of the two chambers.

[0063] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A reaction chamber, characterized in that: include: A first cavity, a second cavity, an exhaust port, a first film thickness sensor, and a second film thickness sensor, wherein the exhaust port is disposed between the first cavity and the second cavity, the first film thickness sensor is disposed in the first cavity and adjacent to the exhaust port, and the second film thickness sensor is disposed in the second cavity and adjacent to the exhaust port.

2. The reaction chamber according to claim 1, characterized in that: It also includes a first air intake valve and a second air intake valve, wherein the first air intake valve is connected to the first cavity and is used to adjust the air intake flow of the first cavity, and the second air intake valve is connected to the second cavity and is used to adjust the air intake flow of the second cavity.

3. The reaction chamber according to claim 2, characterized in that: It also includes a first air intake pipeline and a second air intake pipeline, the first air intake pipeline is connected to the first cavity, the second air intake pipeline is connected to the second cavity, the first air intake valve is arranged at one end of the first air intake pipeline close to the first cavity, and the second air intake valve is arranged at one end of the second air intake pipeline close to the second cavity.

4. The reaction chamber according to claim 1, characterized in that: The first film thickness sensor is plugged into the bottom of the cavity, and the probe surface of the first film thickness sensor is exposed in the first cavity; and the second film thickness sensor is plugged into the bottom of the cavity, and the probe surface of the second film thickness sensor is exposed in the second cavity; and / or, A first baffle is provided on the top of the first cavity, the first film thickness sensor is plugged into the first baffle, and the probe surface of the first film thickness sensor is exposed in the first cavity; and a second baffle is provided on the top of the second cavity, the second film thickness sensor is plugged into the second baffle, and the probe surface of the second film thickness sensor is exposed in the second cavity.

5. The reaction chamber according to claim 1, characterized in that: The position of the first film thickness sensor in the first cavity is symmetrical to the position of the second film thickness sensor in the second cavity.

6. The reaction chamber according to claim 1, characterized in that: The first film thickness sensor and the second film thickness sensor are both quartz crystal oscillators.

7. A method for monitoring film thickness consistency, characterized in that: Applied to the reaction chamber according to any one of claims 1 to 6, the method comprising: Acquire a first film thickness detected by the first film thickness sensor and a second film thickness detected by the second film thickness sensor; The first film thickness is compared to the second film thickness to determine a film thickness difference between the first film thickness and the second film thickness.

8. The method according to claim 7, characterized in that The method further includes: adjusting the first intake valve and / or the second intake valve according to the film thickness difference.

9. The method according to claim 8, characterized in that The step of adjusting the first intake valve and / or the second intake valve according to the film thickness difference comprises: Determining the intake air flow to be adjusted according to the film thickness difference; Inputting the intake flow to be adjusted into a preset flow adjustment formula for calculation to output a flow capacity value corresponding to the first intake valve and / or the second intake valve; The first intake valve and / or the second intake valve are adjusted according to the flow capacity value.

10. A thin film deposition device, comprising a reaction chamber, wherein the reaction chamber is the reaction chamber according to any one of claims 1 to 6, and the reaction chamber is monitored by the thin film thickness consistency monitoring method according to any one of claims 7 to 9.

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