A phase-change energy-absorbing resistor device based on vanadium oxide metal composite material

Abstract

The present invention discloses a phase change energy absorption resistor device based on vanadium oxide metal composite material, which belongs to the field of energy absorption resistors and is composed of a vanadium oxide phase change resistor valve sheet and a nickel-chromium alloy energy absorption resistor. VO2 / V2O3 and copper are combined into a vanadium oxide phase change resistor valve sheet, and the two ends of the nickel-chromium alloy energy absorption resistor are planar structures. The resistance value R of the vanadium oxide phase change resistor valve sheet before phase change is vb is the resistance value R of the nickel-chromium alloy energy-absorbing resistor ni More than 10 times of the voltage drop of the phase change energy absorption resistor device, more than 90% falls on R vb Two ends; the resistance value R of the vanadium oxide phase change resistor valve after phase change va The resistance value R of the nickel-chromium alloy energy-absorbing resistor is reduced by 4-6 orders of magnitude. ni Under transient current impact, more than 90% of the energy is absorbed by the nickel-chromium alloy energy-absorbing resistor, effectively protecting the vanadium oxide phase change resistor valve plate.

Description

Technical Field

[0001] The invention belongs to the field of energy absorbing resistors, and in particular relates to a phase-change energy absorbing resistor device based on a vanadium oxide metal composite material. Background Art

[0002] In the fields of flexible DC power grid DC circuit breakers and AC power grid resonant current limiters, the development of energy-absorbing zinc oxide lightning arresters is a technical difficulty. During the current limiting or disconnection process of the power grid, the lightning arrester must withstand the short-circuit current for a certain period of time. Due to the existence of its residual pressure, it will absorb huge short-circuit energy, causing its own heating temperature to rise. The short-circuit energy injection and body temperature rise that the lightning arrester can withstand are limited. When the body temperature rise exceeds a certain limit, it will cause the valve plate to burst, which will directly affect the operation safety of power grid protection equipment such as current limiters and circuit breakers, and will further affect the operation safety of the entire power grid. It is urgent to develop a phase change energy-absorbing resistor device that has high resistance in the steady-state operation stage and changes to a low resistance state in the short-circuit state of the power grid.

[0003] In addition, in the field of superconducting magnet quench protection, complex quench detection is usually required and the transfer of superconducting magnet quench energy is achieved by switching on and off resistors through power electronic switches. There is also a lack of a phase change energy absorption resistor device that has high resistance in the steady-state operation stage and changes to a low resistance state in the superconducting magnet quench state.

[0004] At present, the voltage-controlled energy-absorbing devices used for the protection of power systems and power equipment generally use zinc oxide arresters. However, zinc oxide arresters are ceramic materials and are easily damaged under high voltage and high current shocks, which affects the life of the arrester and the safety of the power equipment and systems to be protected. As the temperature rises, the VO2 insulator-metal phase change material will undergo a crystal transformation between the monoclinic structure and the rutile structure at around 68°C, and at the same time, it will transform from a semiconductor state to a metallic state. This transformation occurs within a nanosecond time range, accompanied by a reversible mutation of resistivity and magnetic susceptibility. Similar to VO2, the V2O3 insulator-metal phase change material will undergo a crystal transformation between the monoclinic structure and the rutile structure at around 150K, and at the same time, it will transform from a semiconductor state to a metallic state.

[0005] The preparation process of VO2 and V2O3 materials is relatively simple. They can be prepared as bulk materials through processes such as hot pressing, or as thin film materials through processes such as sol-gel or magnetron sputtering. Chinese invention patent ZL201310047607.0 discloses a resonant current limiter based on VO2 insulator-metal phase change resistor, but does not disclose the structure of the insulator-metal phase change resistor. For VO2 materials, due to the low specific heat capacity of vanadium oxide, about 205 (J / kg·K), it can quickly produce temperature rise and phase change when energy is injected, and there is also a risk of bursting at high temperatures, making it difficult to use it independently as an energy absorption device. Summary of the invention

[0006] In view of the above-mentioned deficiencies in the prior art, the present invention provides a phase-change energy-absorbing resistor device based on a vanadium oxide metal composite material. The phase-change energy-absorbing resistor device is a phase-change energy-absorbing resistor device based on a VO2 / V2O3 and copper and nickel-chromium alloy metal composite material. When the temperature is below 68°C, VO2 is in a semi-conductive state with a resistivity of 10 0 -10 2 Ω·cm level; when the temperature exceeds 68℃, VO2 becomes a conductive material and the resistivity drops to 10 -4 Ω·cm level. The thermal expansion coefficients of VO2 before and after the phase transition temperature (68°C) are 18×10 -6 / K and 23×10 -6 / K, the thermal expansion coefficient of copper material is (16.5-17)×10 -6 / K, the two are equivalent. Similar to VO2, V2O3 insulator-metal phase change material undergoes a crystal transformation between monoclinic structure and rutile structure at around 150K, and the resistivity drops to 10 -4 Ω·cm level. Through interface design, VO2 / V2O3 bulk / thin film materials are compounded with copper and nickel-chromium alloy resistor materials, and a phase-change energy-absorbing resistor device is made using a modular design process, which is technically feasible; economically, my country has abundant vanadium resources and relatively low prices, which provides a basis for industrial promotion.

[0007] The present invention adopts the following technical solutions:

[0008] In one embodiment of the present invention, a phase change energy absorption resistor device based on a vanadium oxide metal composite material is provided, wherein a vanadium oxide (the vanadium oxide is one or both of VO2 and V2O3) block and a copper material (such as electrical pure copper) are combined to form a vanadium oxide phase change resistor valve sheet, and a nickel-chromium alloy energy absorption resistor is made of a nickel-chromium alloy material; the vanadium oxide phase change resistor valve sheet and the nickel-chromium alloy energy absorption resistor are of a crimped structure; the two ends of the nickel-chromium alloy energy absorption resistor are of a planar structure for effective contact with the vanadium oxide phase change resistor valve sheet, and the middle of the nickel-chromium alloy energy absorption resistor is a uniformly distributed structure of multiple nickel-chromium alloy energy absorption resistor columns to increase the resistance value and improve the heat dissipation capacity.

[0009] Furthermore, the resistance value R of the vanadium oxide phase change resistor valve before the phase change vb is the resistance value R of the nickel-chromium alloy energy-absorbing resistor ni The voltage drop of the phase-change energy-absorbing resistor device is more than 90% and falls on both ends of the vanadium oxide phase-change resistor valve plate. The resistance value of the vanadium oxide phase-change resistor valve plate after phase change is R va The resistance value R of the vanadium oxide phase change resistor valve after phase change is reduced by 4-6 orders of magnitude. va is the resistance value R of the nickel-chromium alloy energy-absorbing resistorni Under transient current impact, more than 90% of the energy is absorbed by the nickel-chromium alloy energy-absorbing resistor, which limits the energy absorption and temperature rise of the vanadium oxide phase change resistor valve sheet and ensures the safety of the vanadium oxide phase change resistor valve sheet.

[0010] In another embodiment of the present invention, a phase change energy absorption resistor device based on a vanadium oxide metal composite material is provided, wherein the phase change energy absorption resistor device is composed of a vanadium oxide phase change resistor valve sheet and a nickel-chromium alloy energy absorption resistor; a vanadium oxide phase change resistor valve sheet is formed by alternately stacking multiple layers of vanadium oxide (the vanadium oxide is one or both of VO2 and V2O3) thin films (thickness greater than 0 and less than or equal to 1 mm) and multiple layers of copper substrates, and a nickel-chromium alloy energy absorption resistor is made of a nickel-chromium alloy material; the vanadium oxide phase change resistor valve sheet and the nickel-chromium alloy energy absorption resistor are of a crimped structure; the two ends of the nickel-chromium alloy energy absorption resistor are of a planar structure for effective contact with the vanadium oxide phase change resistor valve sheet, and the middle of the nickel-chromium alloy energy absorption resistor is a uniformly distributed structure of multiple nickel-chromium alloy energy absorption resistor columns to increase the resistance value and improve the heat dissipation capacity.

[0011] Furthermore, the thickness of the vanadium oxide film does not exceed 1 mm, and the temperature distribution uniformity of the vanadium oxide film is improved after being compounded with the copper substrate; in order to improve the steady-state withstand voltage, the vanadium oxide phase change resistor valve sheet is composed of multiple layers of vanadium oxide films and multiple layers of copper substrates alternately stacked; the resistance value R of the vanadium oxide phase change resistor valve sheet before the phase change vb is the resistance value R of the nickel-chromium alloy energy-absorbing resistor ni The voltage drop of the phase-change energy-absorbing resistor device is more than 90% and falls on both ends of the vanadium oxide phase-change resistor valve plate. The resistance value of the vanadium oxide phase-change resistor valve plate after phase change is R va The resistance value R of the vanadium oxide phase change resistor valve after phase change is reduced by 4-6 orders of magnitude. va is the resistance value R of the nickel-chromium alloy energy-absorbing resistor ni Under transient current impact, more than 90% of the energy is absorbed by the nickel-chromium alloy energy-absorbing resistor, which limits the energy absorption and temperature rise of the vanadium oxide phase change resistor valve sheet and ensures the safety of the vanadium oxide phase change resistor valve sheet.

[0012] Furthermore, the phase-change energy-absorbing resistor device is formed by alternately stacking and crimping one or more vanadium oxide phase-change resistor valve sheets and one or more nickel-chromium alloy energy-absorbing resistors.

[0013] Since vanadium oxide has many valence states, its components are prone to change when exposed to air for a long time, which affects its performance. For vanadium oxide phase change resistor valve plates, ceramic or epoxy sleeves are used to package them externally to prevent the components of vanadium oxide from changing when exposed to air for a long time.

[0014] Compared with other methods, the present invention has the following beneficial effects:

[0015] (1) In the field of AC power grid, it is of positive significance to use phase change energy absorption resistor devices as capacitor bypass resistors of series resonant current limiters. When the fault current limiter is operating normally, the phase change resistor behaves in a semiconductor state with a large resistance and has no effect on the power grid. When a short circuit fault occurs, the phase change resistor can achieve a fast and automatic response, behaves in a metallic state, and the resistance becomes smaller, thereby bypassing the capacitor and limiting the short circuit current.

[0016] (2) In the field of flexible DC power grids, the development of energy-absorbing zinc oxide lightning arresters used in DC circuit breakers is a technical difficulty. By connecting phase-change energy-absorbing resistor devices in parallel with oxide core lightning arresters, and taking advantage of the rapid response of zinc oxide lightning arresters and the large energy absorption capacity of phase-change energy-absorbing resistor devices, the overall safety and reliability of energy-absorbing devices can be improved.

[0017] (3) In the field of quench protection of high-temperature superconducting magnets, complex quench detection is usually required and the transfer of quench energy of high-temperature superconducting magnets is achieved by switching resistors through power electronic switches. The use of phase-change energy-absorbing resistor devices can automatically trigger energy absorption when a high-temperature superconducting magnet quenches, thereby improving the overall safety and reliability of superconducting magnets. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 Schematic diagram of phase change resistance characteristics of VO2 single crystal (a) and V2O3 single crystal (b);

[0019] Figure 2 It is a schematic diagram of a phase-change energy-absorbing resistor device based on a vanadium oxide bulk metal composite material of the present invention;

[0020] Figure 3 It is a schematic diagram of a phase-change energy-absorbing resistor device based on a vanadium oxide thin film metal composite material of the present invention;

[0021] Figure 4 Schematic diagram of a vanadium oxide phase change resistor valve sheet made of multi-layer vanadium oxide thin films;

[0022] In the figure, 1 is a vanadium oxide phase change resistor valve plate; 2 is a nickel-chromium alloy energy absorption resistor; 3 is a copper substrate; and 4 is a vanadium oxide film. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical scheme and advantages of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in each embodiment of the present invention described below can be combined with each other as long as they do not conflict with each other. The present invention is further described below in conjunction with the accompanying drawings and specific embodiments.

[0024] Embodiment 1:

[0025] like Figure 1 (a) shows the phase change resistance characteristics of VO2 single crystal. Large-sized VO2 blocks can be made using VO2 powder through hot pressing process. Figure 2 The figure shows a schematic diagram of a phase change energy absorption resistor device based on a vanadium oxide bulk metal composite material. The vanadium oxide phase change resistor valve sheet 1 (the thickness of the VO2 block is 30 mm and the cross-sectional area is 1000 mm) is formed by combining VO2 block and electrical pure copper to form a sandwich structure. 2 ), nickel-chromium alloy (Cr15Ni60, Cr20Ni80 or Cr20Ni35, etc.) material is used to make nickel-chromium alloy energy absorbing resistor 2, and both ends of the nickel-chromium alloy energy absorbing resistor 2 are flat structures (the thickness of the flat structure is 5 mm and the cross-sectional area is 1000 mm 2 ), in order to make good contact with the vanadium oxide phase change resistor valve sheet 1, and in the middle is a uniformly distributed structure of multiple nickel-chromium alloy energy absorption resistor columns (the number of nickel-chromium alloy energy absorption resistor columns is 6, and the size of each nickel-chromium alloy energy absorption resistor column is the same. The length of each nickel-chromium alloy energy absorption resistor column is 10cm, and the total cross-sectional area of ​​the 6 nickel-chromium alloy energy absorption resistor columns is 20mm 2 ), in order to increase the resistance value and dissipate heat well. The three-layer vanadium oxide phase change resistor valve sheet 1 and the two-layer nickel-chromium alloy energy absorption resistor 2 are alternately stacked. The resistance value of the three-layer vanadium oxide phase change resistor valve sheet 1 before phase change is R vb (36Ω) is much larger than the resistance value R of the two-layer nickel-chromium alloy energy-absorbing resistor 2 ni (20mΩ), the voltage drop of the phase change energy absorption resistor device mostly falls on both ends of the vanadium oxide phase change resistor valve plate 1; the resistance value of the vanadium oxide phase change resistor valve plate 1 after phase change is R va The resistance value R of the nickel-chromium alloy energy-absorbing resistor 2 is reduced by 4-6 orders of magnitude, which is much smaller than that of the nickel-chromium alloy energy-absorbing resistor 2. ni Under the impact of large current (1000A, 1s), most of the energy (20kJ) is absorbed by the nickel-chromium alloy energy-absorbing resistor 2, which limits the energy absorption and temperature rise of the vanadium oxide phase change resistor valve sheet 1 and ensures the safety of the vanadium oxide phase change resistor valve sheet 1.

[0026] Embodiment 2:

[0027] like Figure 3-4 As shown, the vanadium oxide film 4 is a VO2 film. The VO2 film can be prepared on the copper substrate 3 by chemical or physical deposition methods such as sol-gel, magnetron sputtering or pulsed laser deposition. 2 , each layer thickness = 1mm) and multilayer copper substrate 3 (number of layers = 5, area = 1000mm 2, copper substrate thickness = 1mm) are alternately stacked to form a vanadium oxide phase change resistor valve sheet 1, and a nickel-chromium alloy (Cr15Ni60, Cr20Ni80 or Cr20Ni35, etc.) material is used to make a nickel-chromium alloy energy absorption resistor 2. Both ends of the nickel-chromium alloy energy absorption resistor 2 are planar structures (the planar structure has a thickness of 5mm and a cross-sectional area of ​​1000 mm 2 ), in order to make good contact with the vanadium oxide phase change resistor valve sheet 1, and in the middle is a uniformly distributed structure of multiple nickel-chromium alloy energy absorption resistor columns (the number of nickel-chromium alloy energy absorption resistor columns is 6, and the size of each nickel-chromium alloy energy absorption resistor column is the same. The length of each nickel-chromium alloy energy absorption resistor column is 10cm, and the total cross-sectional area of ​​the 6 nickel-chromium alloy energy absorption resistor columns is 20mm 2 ) to increase the resistance value and dissipate heat well. Since the thickness of VO2 film is generally not more than 1mm, it can withstand low voltage drop, generally not more than 20V, but because of its thin thickness, it has high thermal stability after being compounded with copper, and is suitable for low voltage and high current (single vanadium oxide phase change resistor valve sheet 1 is less than 100V, and the impact current is greater than 1kA) occasions. The three-layer vanadium oxide phase change resistor valve sheet 1 and the two-layer nickel-chromium alloy energy-absorbing resistor 2 are alternately stacked. The resistance value of the three-layer vanadium oxide phase change resistor valve sheet 1 before the phase change is R vb (12Ω) is much larger than the resistance value R of the two-layer nickel-chromium alloy energy-absorbing resistor 2 ni (20mΩ), the voltage drop of the phase change energy absorption resistor device mostly falls on both ends of the vanadium oxide phase change resistor valve plate 1; the resistance value of the vanadium oxide phase change resistor valve plate 1 after phase change is R va The resistance value R of the nickel-chromium alloy energy-absorbing resistor 2 is much smaller than 4-6 orders of magnitude (12-1200μΩ, based on 100μΩ). ni Under the impact of large current (1kA, 1s), the vanadium oxide phase change resistor valve sheet 1 absorbs 100J of energy after phase change, and most of the energy (20kJ) is absorbed by the nickel-chromium alloy energy-absorbing resistor 2, which limits the energy absorption and temperature rise of the vanadium oxide phase change resistor valve sheet 1 and ensures the safety of the vanadium oxide phase change resistor valve sheet 1.

[0028] Embodiment 3:

[0029] like Figure 3-4 As shown, in order to meet the application requirements of superconducting magnet quench protection phase change energy absorption resistor in liquid nitrogen and below temperature zone, the vanadium oxide film 4 is a V2O3 film. Figure 1 (b) shows the phase change resistance characteristics of V2O3 single crystal. V2O3 thin film can be prepared on copper substrate 3 by chemical or physical deposition methods such as sol-gel, magnetron sputtering or pulsed laser deposition. Multilayer V2O3 thin film (number of layers = 4, area = 1000mm 2 , each layer thickness = 1mm) and multilayer copper substrate 3 (number of layers = 5, area = 1000mm 2, copper substrate thickness = 1mm) are alternately stacked to form a vanadium oxide phase change resistor valve sheet 1, and a nickel-chromium alloy (Cr15Ni60, Cr20Ni80 or Cr20Ni35, etc.) material is used to make a nickel-chromium alloy energy absorption resistor 2. Both ends of the nickel-chromium alloy energy absorption resistor 2 are planar structures (the planar structure has a thickness of 5mm and a cross-sectional area of ​​1000 mm 2 ), in order to make good contact with the vanadium oxide phase change resistor valve sheet 1, and in the middle is a uniformly distributed structure of multiple nickel-chromium alloy energy absorption resistor columns (the number of nickel-chromium alloy energy absorption resistor columns is 6, and the size of each nickel-chromium alloy energy absorption resistor column is the same. The length of each nickel-chromium alloy energy absorption resistor column is 10cm, and the total cross-sectional area of ​​the 6 nickel-chromium alloy energy absorption resistor columns is 20mm 2 ), to increase the resistance value and dissipate heat well. Since the thickness of the V2O3 film is generally not more than 1mm, it can withstand a low voltage drop, generally not more than 20V, but because of its thin thickness, it has high thermal stability after being compounded with copper, and is suitable for low voltage and high current (single vanadium oxide phase change resistor valve sheet is less than 100V, and the impact current is greater than 1kA) occasions. The three-layer vanadium oxide phase change resistor valve sheet 1 and the two-layer nickel-chromium alloy energy-absorbing resistor 2 are alternately stacked. The resistance value of the three-layer vanadium oxide phase change resistor valve sheet 1 before the phase change is R vb (12Ω) is much larger than the resistance value R of the two-layer nickel-chromium alloy energy-absorbing resistor 2 ni (20mΩ), the voltage drop of the phase change energy absorption resistor device mostly falls on both ends of the vanadium oxide phase change resistor valve plate 1; the resistance value of the vanadium oxide phase change resistor valve plate 1 after phase change is R va The resistance value R of the nickel-chromium alloy energy-absorbing resistor 2 is much smaller than 4-6 orders of magnitude (12-1200μΩ, based on 100μΩ). ni Under the impact of large current (1kA, 1s), the vanadium oxide phase change resistor valve sheet 1 absorbs 100J of energy after phase change, and most of the energy (20kJ) is absorbed by the nickel-chromium alloy energy-absorbing resistor 2, which limits the energy absorption and temperature rise of the vanadium oxide phase change resistor valve sheet 1 and ensures the safety of the vanadium oxide phase change resistor valve sheet 1.

Claims

1. A phase-change energy-absorbing resistor device based on vanadium oxide metal composite material, characterized in that: The phase change energy absorption resistor device is composed of a vanadium oxide phase change resistor valve sheet (1) and a nickel-chromium alloy energy absorption resistor (2); the vanadium oxide phase change resistor valve sheet (1) is formed by combining a vanadium oxide block and a copper material, and the nickel-chromium alloy energy absorption resistor (2) is made of a nickel-chromium alloy material; the vanadium oxide phase change resistor valve sheet (1) and the nickel-chromium alloy energy absorption resistor (2) are a crimped structure; the two ends of the nickel-chromium alloy energy absorption resistor (2) are a planar structure, and the middle of the nickel-chromium alloy energy absorption resistor (2) is a uniformly distributed structure of multiple nickel-chromium alloy energy absorption resistor columns; wherein the vanadium oxide is one or both of VO2 and V2O3.

2. The phase-change energy-absorbing resistor device based on vanadium oxide metal composite material according to claim 1, characterized in that: The resistance value R of the vanadium oxide phase change resistor valve plate (1) before phase change vb is the resistance value R of the nickel-chromium alloy energy-absorbing resistor (2) ni The voltage drop of the phase-change energy-absorbing resistor device is more than 90% and falls on both ends of the vanadium oxide phase-change resistor valve sheet (1); the resistance value R of the vanadium oxide phase-change resistor valve sheet (1) after the phase change va The resistance value R of the nickel-chromium alloy energy-absorbing resistor (2) is reduced by 4-6 orders of magnitude. ni Under transient current impact, more than 90% of the energy is absorbed by the nickel-chromium alloy energy-absorbing resistor (2), thereby limiting the energy absorption and temperature rise of the vanadium oxide phase change resistor valve plate (1).

3. The phase-change energy-absorbing resistor device based on vanadium oxide metal composite material according to claim 1, characterized in that: The vanadium oxide phase change resistor valve plate (1) is externally packaged with a ceramic or epoxy casing.

4. The phase-change energy-absorbing resistor device based on vanadium oxide metal composite material according to claim 1, characterized in that: The vanadium oxide phase change resistor valve sheet (1) is made of VO2 block when used at room temperature, and is made of V2O3 block when used in liquid nitrogen or lower temperature range.

5. A phase-change energy-absorbing resistor device based on vanadium oxide metal composite material, characterized in that: The phase change energy absorption resistor device is composed of a vanadium oxide phase change resistor valve sheet (1) and a nickel-chromium alloy energy absorption resistor; a plurality of vanadium oxide thin films (4) and a plurality of copper substrates (3) are alternately stacked to form the vanadium oxide phase change resistor valve sheet (1), and a nickel-chromium alloy energy absorption resistor (2) is made of a nickel-chromium alloy material; the vanadium oxide phase change resistor valve sheet (1) and the nickel-chromium alloy energy absorption resistor (2) are of a crimped structure; the two ends of the nickel-chromium alloy energy absorption resistor (2) are of a planar structure, and the middle of the nickel-chromium alloy energy absorption resistor (2) is of a uniformly distributed structure of multiple nickel-chromium alloy energy absorption resistor columns; wherein the vanadium oxide is one or both of VO2 and V2O3.

6. The phase-change energy-absorbing resistor device based on vanadium oxide metal composite material according to claim 5, characterized in that: The thickness of the vanadium oxide film (4) does not exceed 1 mm, and after being compounded with the copper substrate (3), the temperature distribution uniformity of the vanadium oxide film (4) is improved.

7. The phase-change energy-absorbing resistor device based on vanadium oxide metal composite material according to claim 5, characterized in that: The resistance value R of the vanadium oxide phase change resistor valve plate (1) before phase change vb is the resistance value R of the nickel-chromium alloy energy-absorbing resistor (2) ni The voltage drop of the phase-change energy-absorbing resistor device is more than 90% and falls on both ends of the vanadium oxide phase-change resistor valve sheet (1); the resistance value R of the vanadium oxide phase-change resistor valve sheet (1) after the phase change va The resistance value R of the nickel-chromium alloy energy-absorbing resistor (2) is reduced by 4-6 orders of magnitude. ni Under transient current impact, more than 90% of the energy is absorbed by the nickel-chromium alloy energy-absorbing resistor (2), thereby limiting the energy absorption and temperature rise of the vanadium oxide phase change resistor valve plate (1).

8. The phase-change energy-absorbing resistor device based on vanadium oxide metal composite material according to claim 5, characterized in that: The vanadium oxide phase change resistor valve plate (1) is externally packaged with a ceramic or epoxy casing.

9. The phase-change energy-absorbing resistor device based on vanadium oxide metal composite material according to claim 5, characterized in that: The vanadium oxide phase change resistor valve sheet (1) is made of VO2 thin film when used at room temperature, and is made of V2O3 thin film when used in liquid nitrogen or lower temperature range.

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