Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus, which can effectively inhibit the spreading of processing liquid relative to the lower surface of a substrate. The substrate processing apparatus is provided with: a holding unit for rotatably holding a substrate; a rotation driving unit for rotating the holding unit; and an opposing plate that surrounds the holding unit in plan view and that opposes the substrate, the opposing plate being provided with: a first gas supply unit that is provided on the inside in the radial direction and that supplies gas at least between the substrate and the opposing plate; and at least one displacement part which is provided on a surface facing the substrate further to the outside in the radial direction than the first gas supply part, and which has a shorter distance from the substrate further to the outside in the radial direction than to the inside in the radial direction.

Description

[0001] The present invention is a divisional application of the invention application with application number 202010634817.X, invention name “substrate processing device” and application date July 3, 2020. Technical Field

[0002] The invention relates to a substrate processing device and a substrate processing method. Background Art

[0003] Conventionally, in the manufacturing process of substrates such as semiconductor substrates, a substrate processing apparatus is used to perform various processes (substrate processing) on ​​the substrates. The processing uses a processing liquid for processing the substrates (for example, see Patent Document 1).

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2017-11015 Summary of the invention

[0007] Problems to be solved by the invention

[0008] In substrate processing, if the processing liquid spreads to the lower surface (back surface) of the substrate being processed, unexpected deterioration may occur. In Patent Document 1, spreading of the processing liquid is suppressed by blowing air to the lower surface of the substrate.

[0009] However, in the technology disclosed in Patent Document 1, when the pressure of the gas blown toward the lower surface of the substrate is non-uniform, it may not be possible to sufficiently suppress the spread of the processing liquid.

[0010] The technology disclosed in the present specification has been developed based on the above-described problems, and an object of the present invention is to provide a technology that can effectively suppress the spread of a processing liquid with respect to the lower surface of a substrate.

[0011] Solutions to Solve Problems

[0012] Scheme 1 of the technology disclosed in the present application specification comprises: a holding portion, which is used to rotatably hold a substrate; a rotation driving portion, which is used to rotate the above-mentioned holding portion; and an opposing plate, which surrounds the above-mentioned holding portion and is opposite to the above-mentioned substrate in a plan view, and the above-mentioned opposing plate comprises: a first gas supply portion, which is arranged on the radial inner side and is used to supply gas to at least between the above-mentioned substrate and the above-mentioned opposing plate; and at least one displacement portion, which is arranged on a surface opposite to the above-mentioned substrate on the radial outer side than the above-mentioned first gas supply portion, and the distance between the radial outer side and the above-mentioned substrate is shorter than the radial inner side.

[0013] A second aspect of the technology disclosed in the present specification is related to the first aspect, wherein the opposing plate further includes a second gas supply portion radially outside the displacement portion, the second gas supply portion being configured to supply gas between the substrate and the opposing plate.

[0014] A third aspect of the technology disclosed in the present specification is related to the first or second aspect, and a plurality of the displacement portions are provided in the radial direction of the opposing plate.

[0015] A fourth aspect of the technology disclosed in the present specification relates to any one of the first to third aspects, wherein the displacement portion has a stepped shape extending in the circumferential direction of the opposing plate.

[0016] A fifth aspect of the technology disclosed in the present specification relates to any one of the first to fourth aspects, wherein the first gas supply unit supplies the gas toward the holding unit.

[0017] Scheme 6 of the technology disclosed in the present application specification is related to any one of schemes 1 to 5, wherein the first gas supply portion is arranged on the radially inner side of the opposing plate, and the opposing plate also has a protrusion portion, which is arranged on the radially inner side and is closer to the substrate than the first gas supply portion.

[0018] Solution 7 of the technology disclosed in the present application specification is related to any one of solutions 1 to 6, and further comprises: a moving part connected to the above-mentioned opposing plate and used to move the above-mentioned opposing plate closer to or farther away from the above-mentioned substrate; and a control part, which is used to control the operation of the above-mentioned moving part.

[0019] Claim 8 of the technology disclosed in the present application specification is related to claim 7, and further includes an adjustment unit for adjusting a connection distance between the moving unit and the opposing plate.

[0020] Scheme 9 of the technology disclosed in the present application specification is related to scheme 7 or 8, and further comprises a photographing unit for photographing the substrate, wherein the control unit controls the movement of the moving unit based on the shape of the substrate in the image photographed by the photographing unit when viewed from the side.

[0021] Scheme 10 of the technology disclosed in the present application specification is related to any one of schemes 7 to 9, and further comprises: a chemical liquid supply unit, which is used to supply chemical liquid to the above-mentioned substrate; and a cleaning liquid supply unit, which is used to supply cleaning liquid to the above-mentioned substrate, and the above-mentioned control unit controls the movement of the above-mentioned moving unit so that the distance between the above-mentioned opposing plate and the above-mentioned substrate during the period when the above-mentioned cleaning liquid is supplied by the above-mentioned cleaning liquid supply unit is longer than the distance between the above-mentioned opposing plate and the above-mentioned substrate during the period when the above-mentioned chemical liquid is supplied by the above-mentioned chemical liquid supply unit.

[0022] Aspect 11 of the technology disclosed in the present specification is related to any one of aspects 1 to 10, wherein the opposing plate further includes an end cleaning liquid discharge portion, which is provided along a radially outer side surface and is used to discharge cleaning liquid toward an end of the substrate.

[0023] Effects of the Invention

[0024] According to the solutions 1 to 11 of the technology disclosed in the specification of this application, the gas supplied from the first gas supply unit has a uniform pressure on the radial inner side of the displacement unit, and is further discharged to the radial outer side of the displacement unit in a uniform pressure state. Therefore, the discharge of the uniform pressure gas can effectively suppress the spread of the processing liquid relative to the lower surface of the substrate.

[0025] In addition, the objects, features, schemes, and advantages of the technology disclosed in the present application specification will become more apparent from the detailed description and drawings shown below. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a diagram schematically showing an example of the configuration of a substrate processing system according to an embodiment.

[0027] Figure 2 This is a diagram schematically showing an example of the configuration of a substrate processing apparatus of a substrate processing system according to an embodiment.

[0028] Figure 3 It is a cross-sectional view schematically showing an example of the structure of a back side shielding plate and its surroundings in a substrate processing apparatus according to an embodiment.

[0029] Figure 4 This is another cross-sectional view schematically showing an example of the structure of the back side shielding plate and its surroundings of the substrate processing apparatus according to the embodiment.

[0030] Figure 5 It is a perspective view showing an example of a spin chuck and a back side shielding plate in a state where no substrate is arranged.

[0031] Figure 6 It is a cross-sectional view showing an example of the structure of a connecting screw portion of a substrate processing apparatus according to an embodiment.

[0032] Figure 7 It is a cross-sectional view showing another example of the structure of the outer edge portion of the back side shielding plate of the substrate processing apparatus according to the embodiment.

[0033] Figure 8 It is a perspective view showing another example of the structure of the outer edge portion of the back side shielding plate of the substrate processing apparatus according to the embodiment.

[0034] Fig. 9It is a cross-sectional view showing another example of the structure of the outer edge portion of the back side shielding plate of the substrate processing apparatus according to the embodiment.

[0035] Fig.10 This is a functional block diagram showing an example of the connection relationship between each element of the substrate processing system and the control unit.

[0036] Fig.11 It is a flowchart showing the operation of the substrate processing system according to the embodiment.

[0037] Fig.12 It is a diagram showing an example of a processing process of the substrate processing apparatus according to the embodiment.

[0038] Fig.13 It is a diagram showing an example of a processing process of the substrate processing apparatus according to the embodiment.

[0039] Fig.14 It is a diagram showing an example of a processing process of the substrate processing apparatus according to the embodiment.

[0040] Fig.15 It is a cross-sectional view schematically showing a modified example of the step portion of the back shielding plate.

[0041] Fig.16 It is a cross-sectional view schematically showing another modified example of the step portion of the back shielding plate.

[0042] In the figure:

[0043] 1—substrate processing system, 2—indexing part, 3—processing part, 3A—transportation module, 3B—processing module, 7—control part, 21—substrate container, 22, 133A—loading table, 23—indexing robot, 23A—base part, 23B—multi-jointed arm, 23C, 23D, 33C, 33D—hand, 31—transportation mechanism, 33—transportation robot, 33A—horizontal driving part, 33B—vertical driving part, 33E—pillar, 33F—connecting part, 50—processing chamber, 50A—partition wall, 50B—opening part, 50C—gate, 51—rotation Chuck, 51A—rotating base, 51C—rotating shaft, 51D—rotating motor, 52—liquid nozzle, 53—liquid tank, 54—liquid piping, 55—liquid delivery device, 56—liquid valve, 57—circulation piping, 58—circulation valve, 59—temperature regulating device, 60—rinsing liquid nozzle, 61—rinsing liquid piping, 62—rinsing liquid valve, 64—cleaning liquid nozzle, 65—cleaning liquid piping, 66—cleaning liquid valve, 71—CPU, 72—ROM, 73—RAM, 74—storage unit, 75—bus wiring, 76—input unit, 77—display unit, 78—communication 100A, 100B, 100C—substrate processing device, 133B—horizontal slider, 133C—horizontal motor, 133D—rotation motor, 133G—vertical slider, 133H—vertical motor, 152—chemical liquid arm, 152A, 160A—rotation drive source, 152B, 160B—axis body, 152C, 160C—arm, 160—rinsing liquid arm, 170, 170X, 170Y—back shielding plate, 170A, 172, 173—stepped portion, 170C—protruding portion, 170B, 170D—gas supply portion, 1 70E—connecting threaded portion, 170F—eave portion, 170G—cleaning liquid discharge portion, 171—box body, 171A—discharge hole, 180—gap area, 181—reinforcement ring, 182—base ring, 190—moving portion, 190A—connecting portion, 190B—axis, 190C—spring, 200—shooting portion, 511—processing cup, 513—discharge port, 515—exhaust port, 1700A, 1700C—gas flow path, 1700B, 1700D—gas supply hole, 1701A—cap, 1701B, 1701C—adjustment threaded parts. DETAILED DESCRIPTION

[0044] In the following embodiments, detailed features and the like are shown for explaining the technology, but these are only examples, and not all of them are essential features in order to implement the embodiments.

[0045] In addition, the accompanying drawings are only schematically shown, and for the convenience of explanation, the structure is appropriately omitted or simplified in the drawings. In addition, the size and position of the structures shown in different drawings are not necessarily accurately recorded, and can be appropriately changed. In addition, in drawings such as top views that are not sectional views, hatching is sometimes marked to facilitate understanding of the contents of the embodiments.

[0046] In the following description, the same components are denoted by the same reference numerals and shown in the figure, and their names and functions are also the same. Therefore, in order to avoid duplication, their detailed description may be omitted.

[0047] In the following description, a certain component may be described as “having”, “including”, or “having”, but this does not mean an exclusive expression excluding the presence of other components unless otherwise specified.

[0048] In the following description, ordinal numbers such as “first” or “second” may be used. These terms are used for convenience in order to facilitate understanding of the contents of the embodiments, and are not limited to the order that can be generated based on these ordinal numbers.

[0049] In addition, in the descriptions recorded below, expressions indicating equal states, such as "same", "equal", "uniform" or "uniform", unless otherwise specified, include cases where a strictly equal state is indicated and cases where a difference occurs within a tolerance or a range that can achieve the same degree of functionality.

[0050] In addition, expressions such as “moving an object in a specific direction” in the descriptions below include moving the object parallel to the specific direction and moving the object in a direction having a component in the specific direction, unless otherwise specified.

[0051] In addition, in the description recorded below, terms such as "up", "down", "left", "right", "side", "bottom", "front" or "back" are sometimes used to indicate specific positions and directions, but these terms are used for convenience in order to easily understand the contents of the implementation method and have nothing to do with the direction during actual implementation.

[0052] <Implementation Method>

[0053] Hereinafter, a substrate processing system, a substrate processing apparatus, and a substrate processing method according to the present embodiment will be described.

[0054] <Structure of substrate processing system>

[0055] Figure 11 is a diagram schematically showing an example of the structure of a substrate processing system according to the present embodiment. In addition, in order to facilitate understanding of the structure, in this figure, some components are sometimes omitted or simplified.

[0056] The substrate processing system 1 is a single-sheet processing system that processes disk-shaped substrates W such as semiconductor wafers one by one. The substrate processing system 1 performs various processes on the substrate W such as cleaning processing and etching processing.

[0057] like Figure 1 By way of example, the substrate processing system 1 includes an indexing part 2 and a processing part 3 in sequence toward the positive direction of the X-axis.

[0058] Furthermore, the processing section 3 includes a transport module 3A and a processing module 3B in this order as viewed in the positive direction of the X-axis.

[0059] <Index section>

[0060] The indexing part 2 comprises: a substrate container 21 that can accommodate multiple substrates W in a stacked state; a loading table 22 that supports the substrate container 21; and an indexing robot 23 that receives unprocessed substrates W from the substrate container 21 and delivers substrates W processed in the processing part 3 to the substrate container 21.

[0061] In addition, the number of the mounting tables 22 is Figure 1 In the example, for simplicity, the number is set to one, but more than one number may be arranged along the Y-axis direction.

[0062] The substrate container 21 may be a front opening unified pod (FOUP) that stores the substrate W in a sealed state, or a standard mechanical interface (SMIF) wafer box, or an open cassette (OC).

[0063] The index robot 23 includes, for example, a base portion 23A, a multi-joint arm 23B, and two hands 23C and 23D provided at a distance from each other in the vertical direction.

[0064] The base unit 23A is fixed to, for example, a frame that defines the outer shape of the index portion 2 of the substrate processing system 1 .

[0065] The multi-joint arm 23B is configured such that a plurality of arms rotatable along a horizontal plane are rotatably coupled to each other, and the corresponding arms are configured such that the angles between the arms are changed at the joints serving as coupling locations of the corresponding arms, thereby allowing the corresponding arms to bend and extend.

[0066] The base end of the multi-joint arm 23B is coupled to the base part 23A so as to be rotatable about a vertical axis. Furthermore, the multi-joint arm 23B is coupled to the base part 23A so as to be liftable.

[0067] The hand 23C and the hand 23D are configured to hold one substrate W respectively.

[0068] The index robot 23 uses, for example, the hand 23C to carry out an unprocessed substrate W from the substrate container 21 held on the stage 22. Then, the index robot 23 delivers the substrate W to the transport mechanism 31 (described later) of the transport module 3A from the negative direction of the X axis.

[0069] Then, the index robot 23 receives a processed substrate W from the transport mechanism 31 using, for example, the hand 23D. Then, the index robot 23 stores the substrate W in the substrate container 21 held on the mounting table 22 .

[0070] <Processing part>

[0071] The transport module 3A of the processing section 3 includes a transport mechanism 31 that can transport one or more substrates W while holding them in a horizontal posture.

[0072] The conveying mechanism 31 can move, for example, along a cylindrical conveying path surrounded by partitions (not shown) formed along the XZ plane and the XY plane. Alternatively, the conveying mechanism 31 can be guided and reciprocated by a rail extending in the X-axis direction.

[0073] The substrate W is transported by the transport mechanism 31 between a position close to the index portion 2 in the negative direction of the X axis and a position close to a transport robot 33 (described later) in the positive direction of the X axis.

[0074] The processing module 3B of the processing section 3 includes a transfer robot 33 for transferring the substrate W, and a plurality of substrate processing apparatuses 100A, 100B, and 100C for performing predetermined processing on the unprocessed substrate W supplied from the transfer mechanism 31 .

[0075] The transfer robot 33 includes a horizontal drive unit 33A, a vertical drive unit 33B, a hand 33C, a hand 33D, and a support column 33E to which these components are attached via a coupling 33F and which extends in the vertical direction.

[0076] The horizontal drive unit 33A moves the hand 33C and the hand 33D in the horizontal direction. The horizontal drive unit 33A includes a mounting table 133A, a horizontal slider 133B that reciprocates the upper surface of the mounting table 133A in the horizontal direction, and a horizontal motor 133C that moves the horizontal slider 133B.

[0077] A rail (not shown) extending linearly is provided on the upper surface of the mounting table 133A, and the moving direction of the horizontal slider 133B is restricted by the rail. The movement of the horizontal slider 133B is achieved by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism.

[0078] The hand 33C and the hand 33D are provided at the front end of the horizontal slider 133B. When the horizontal slider 133B is moved along the track by the horizontal motor 133C, the hand 33C and the hand 33D can move forward and backward in the horizontal direction. In other words, the horizontal driving unit 33A moves the hand 33C and the hand 33D in the direction of moving away from and approaching the support 33E in the horizontal direction.

[0079] The horizontal drive unit 33A includes a rotation motor 133D that rotates the mounting table 133A around a rotation axis Z1 along the vertical direction. The rotation motor 133D allows the hand 33C and the hand 33D to rotate around the rotation axis Z1 within a range that does not interfere with the support column 33E.

[0080] The vertical drive unit 33B includes a vertical slider 133G and a vertical motor 133H. The vertical slider 133G is engaged with a rail (not shown here) provided on the support column 33E and extending in the vertical direction.

[0081] The vertical motor 133H reciprocates the vertical slider 133G along the track in the vertical direction. The movement of the vertical slider 133G is realized by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism.

[0082] The link 33F links the vertical slider 133G and the mounting platform 133A, and supports the mounting platform 133A from below. The vertical motor 133H moves the vertical slider 133G, thereby moving the mounting platform 133A in the vertical direction. As a result, the hands 33C and 33D can move up and down in the vertical direction.

[0083] The horizontal drive unit 33A does not necessarily move the hands 33C and 33D in parallel with the horizontal direction, but may move the hands 33C and 33D in a composite direction of the horizontal direction and the vertical direction. That is, "moving in the horizontal direction" means moving in a direction having a horizontal component.

[0084] Similarly, the vertical drive unit 33B does not necessarily move the hands 33C and 33D parallel to the vertical direction, but may move the hands 33C and 33D in a direction that is a composite of the vertical direction and the horizontal direction. That is, "moving in the vertical direction" means moving in a direction that has a component in the vertical direction.

[0085] The transport robot 33 uses, for example, the hand 33C to carry out an unprocessed substrate W held by the transport mechanism 31. Then, the transport robot 33 places the substrate W on the upper surface of a spin base 51A (described later) of the substrate processing apparatus 100A, for example, from the negative direction of the X axis.

[0086] The transport robot 33 receives a processed substrate W from the substrate processing apparatus 100A, the substrate processing apparatus 100B, or the substrate processing apparatus 100C using, for example, the hand 33D, and then delivers the substrate W to the transport mechanism 31 .

[0087] The substrate processing apparatus 100A, the substrate processing apparatus 100B, and the substrate processing apparatus 100C are stacked in this order along the positive direction of the Z axis to form a processing tower TW.

[0088] In addition, the number of substrate processing devices is Figure 1 In the example, the number is set to three for simplicity, but it can be more than three.

[0089] In addition, Figure 1 In the figure, the substrate processing apparatus 100A, the substrate processing apparatus 100B and the substrate processing apparatus 100C are shown as being located in the positive direction of the X-axis of the conveying robot 33, but the positions of the substrate processing apparatus 100A, the substrate processing apparatus 100B and the substrate processing apparatus 100C are not limited to this case, for example, they can also be arranged in any one of the positive direction of the X-axis, the positive direction of the Y-axis and the negative direction of the Y-axis of the conveying robot 33.

[0090] <Structure of substrate processing apparatus>

[0091] Figure 2 1 is a diagram schematically showing an example of the structure of a substrate processing apparatus 100A of a substrate processing system according to the present embodiment. In addition, the structures of the substrate processing apparatus 100B and the substrate processing apparatus 100C are also similar to those of the present embodiment. Figure 2 The same is true for the examples.

[0092] The substrate processing apparatus 100A is a single-sheet processing apparatus that processes disc-shaped substrates W such as semiconductor wafers one by one. The substrate processing apparatus 100A performs various processes (cleaning processes or etching processes, etc.) on the substrate W, such as fluid processing using a processing liquid (i.e., a processing liquid including a chemical liquid, a cleaning liquid, or a rinse liquid) or a gas, processing using electromagnetic waves such as ultraviolet rays, or physical cleaning processes (e.g., brush cleaning or nozzle cleaning, etc.).

[0093] In addition, substrates to be processed include, for example, semiconductor substrates, substrates for flat panel displays (FPDs) such as liquid crystal display devices or organic EL (electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, printed substrates, or substrates for solar cells.

[0094] like Figure 2 As shown in the example, the substrate processing apparatus 100A includes: a box-shaped processing chamber 50 having an internal space; a spin chuck 51 that holds a substrate W in a horizontal position in the processing chamber 50 and rotates the substrate W around a vertical rotation axis Z passing through the center of the substrate W; a back shielding plate 170 disposed opposite to the lower surface of the substrate W; and a back shielding plate 170 that is arranged to extend in a vertical direction (i.e., Figure 2 a moving portion 190 that moves in the Z direction in the middle; a housing 171 that covers the spin chuck 51 and the moving portion 190; and a cylindrical processing cup 511 that surrounds the housing 171 around the rotation axis Z of the substrate W.

[0095] Here, “opposing” means, for example, a state in which surfaces are facing each other, and another object may be interposed between the facing surfaces.

[0096] The processing chamber 50 is surrounded by a box-shaped partition wall 50A. An opening 50B for carrying a substrate W into or out of the processing chamber 50 is formed in the partition wall 50A.

[0097] The opening 50B is opened and closed by the shutter 50C. The shutter 50C is moved to a closed position ( Figure 2 ) and the open position ( Figure 2 The solid lines in the figure indicate rise and fall.

[0098] When loading and unloading the substrate W, the transfer robot uses the robot hand to access the processing chamber 50 through the opening 50B. This allows an unprocessed substrate W to be placed on the upper surface of the spin chuck 51 or a processed substrate W to be removed from the spin chuck 51 .

[0099] like Figure 2 For example, the spin chuck 51 comprises: a disc-shaped spin base 51A whose upper surface vacuum-adsorbs the lower surface of a substrate W in a horizontal position; a spin shaft 51C extending downward from the center of the spin base 51A; and a spin motor 51D that rotates the substrate W adsorbed on the spin base 51A by rotating the spin shaft 51C.

[0100] The upper surface of the spin base 51A is a flat surface made of, for example, porous ceramics, etc. However, grooves, projections and depressions, etc. may be formed on the upper surface of the spin base 51A as long as the substrate W can be adsorbed.

[0101] The back shielding plate 170 is provided in a ring shape in a plan view so as to surround the periphery of the spin chuck 51. In addition, the upper surface of the back shielding plate 170 faces the lower surface of the substrate W held on the spin base 51A. In addition, the area sandwiched by the upper surface of the back shielding plate 170 and the lower surface of the substrate W is defined as a gap area 180.

[0102] A step portion 170A is formed on the upper surface of the back shielding plate 170. In the step portion 170A, the distance between the upper surface of the back shielding plate 170 and the lower surface of the substrate W is shorter on the radially outer side than on the radially inner side.

[0103] In addition, Figure 2 In the figure, the back shielding plate 170 has a diameter slightly smaller than that of the substrate W, but the size of the back shielding plate 170 is not limited thereto and may be the same size as that of the substrate W or larger than that of the substrate W.

[0104] In the present embodiment, the back shielding plate 170 is independent of the spin chuck 51 and does not rotate about the rotation axis Z. However, the back shielding plate 170 may rotate about any axis including the rotation axis Z.

[0105] The moving part 190 supports the back shielding plate 170 and vertically moves the back shielding plate 170 up and down. The moving part 190 is provided around the spin chuck 51 in a plan view and vertically moves up and down by a motor (not shown).

[0106] By the operation of the moving part 190, the upper surface of the back shielding plate 170 is raised and lowered between a position (referred to as an upper position, etc.) where it can contact the lower surface of the substrate W held on the spin base 51A and a position (referred to as a lower position, etc.) where the gap region 180 sandwiched between the upper surface of the back shielding plate 170 and the lower surface of the substrate W is fully expanded. Here, the operation of the moving part 190 is controlled by a control part described later.

[0107] In addition, in the present embodiment, the back shielding plate 170 is moved by the action of the moving portion 190, thereby changing the width of the gap region 180 in the Z direction. However, the following situation may also exist: the width of the gap region 180 in the Z direction is changed by moving the substrate W held on the rotating base 51A relative to the back shielding plate 170.

[0108] like Figure 2As an example, the substrate processing device 100A includes: a liquid nozzle 52 that discharges liquid toward the upper surface of the substrate W held on the rotating chuck 51; a liquid arm 152 to which the liquid nozzle 52 is installed at the front end; a liquid tank 53 that stores liquid supplied to the liquid nozzle 52; a liquid piping 54 that guides the liquid in the liquid tank 53 to the liquid nozzle 52; a liquid delivery device 55 (for example, a pump) that transports the liquid in the liquid tank 53 to the liquid piping 54; and a liquid valve 56 that opens and closes the liquid piping 54.

[0109] The liquid medicine arm 152 includes a rotation drive source 152A, a shaft body 152B, and an arm portion 152C having one end fixed to the upper end of the shaft body 152B and having the liquid medicine nozzle 52 attached to the other end.

[0110] As for the liquid medicine arm 152, the shaft 152B is rotated by the rotation drive source 152A, so that the liquid medicine nozzle 52 installed at the front end of the arm 152C can move along the upper surface of the substrate W held by the spin chuck 51. That is, the liquid medicine nozzle 52 installed at the front end of the arm 152C can move in the horizontal direction. Here, the driving of the rotation drive source 152A is controlled by the control unit described later.

[0111] Furthermore, the substrate processing apparatus 100A comprises: a circulation piping 57 connecting the chemical liquid piping 54 and the chemical liquid tank 53 on the upstream side (i.e., the chemical liquid tank 53 side) of the chemical liquid valve 56; a circulation valve 58 inside the circulation piping 57 for opening and closing; and a temperature regulating device 59 for regulating the temperature of the chemical liquid flowing in the circulation piping 57.

[0112] The opening and closing of the liquid medicine valve 56 and the circulation valve 58 are controlled by a control unit described later. When the liquid medicine in the liquid medicine tank 53 is supplied to the liquid medicine nozzle 52, the liquid medicine valve 56 is opened and the circulation valve 58 is closed. In this state, the liquid medicine transported from the liquid medicine tank 53 to the liquid medicine pipe 54 by the liquid delivery device 55 is supplied to the liquid medicine nozzle 52.

[0113] On the other hand, when the supply of the drug to the drug nozzle 52 is stopped, the drug valve 56 is closed and the circulation valve 58 is opened. In this state, the drug sent from the drug tank 53 to the drug pipe 54 by the liquid feeding device 55 is returned to the drug tank 53 through the circulation pipe 57. Therefore, while the supply of the drug to the drug nozzle 52 is stopped, the drug continues to circulate in the circulation path formed by the drug tank 53, the drug pipe 54 and the circulation pipe 57.

[0114] The temperature adjustment device 59 adjusts the temperature of the chemical solution flowing in the circulation pipe 57. Therefore, the chemical solution in the chemical solution tank 53 is heated in the circulation path during the supply stop, and is maintained at a temperature higher than the room temperature.

[0115] Furthermore, the opening of the liquid medicine valve 56 can be adjusted to discharge a small amount of liquid medicine from the liquid medicine nozzle 52 for pre-dispensing. In addition, a liquid medicine recovery unit (not shown here) is arranged near the liquid medicine nozzle 52 to recover the liquid medicine pre-dispensed from the liquid medicine nozzle 52.

[0116] In addition, if Figure 2 As an example, the substrate processing apparatus 100A includes: a rinse liquid nozzle 60 for discharging a rinse liquid toward the upper surface of the substrate W held on the spin chuck 51; a rinse liquid arm 160 to which the rinse liquid nozzle 60 is mounted at the front end; a rinse liquid pipe 61 for supplying the rinse liquid from a rinse liquid supply source (not shown here) to the rinse liquid nozzle 60; and a rinse liquid valve 62 for switching the supply and stop of the rinse liquid from the rinse liquid pipe 61 to the rinse liquid nozzle 60. As the rinse liquid, DIW (deionized water) or the like can be used.

[0117] The rinse liquid arm 160 includes a rotation drive source 160A, a shaft body 160B, and an arm portion 160C having one end fixed to the upper end of the shaft body 160B and having the rinse liquid nozzle 60 attached to the other end.

[0118] As for the rinse liquid arm 160, the shaft 160B is rotated by the rotation drive source 160A, so that the rinse liquid nozzle 60 installed at the front end of the arm 160C can move along the upper surface of the substrate W held on the spin chuck 51. In other words, the rinse liquid nozzle 60 installed at the front end of the arm 160C can move in the horizontal direction. Here, the driving of the rotation drive source 160A is controlled by the control unit described later.

[0119] After the chemical liquid is supplied to the substrate W through the chemical liquid nozzle 52 , the rinse liquid is supplied to the substrate W from the rinse liquid nozzle 60 , thereby rinsing the chemical liquid attached to the substrate W and the back shielding plate 170 .

[0120] In addition, if Figure 2 As an example, the substrate processing apparatus 100A includes: a cleaning liquid nozzle 64 for discharging a cleaning liquid toward a predetermined position (e.g., a spin base 51A) inside the processing chamber 50; a cleaning liquid piping 65 for supplying the cleaning liquid from a cleaning liquid supply source (not shown here) to the cleaning liquid nozzle 64; and a cleaning liquid valve 66 for switching the supply and stop of the cleaning liquid from the cleaning liquid piping 65 to the cleaning liquid nozzle 64. As the cleaning liquid, DIW (deionized water) or the like can be used.

[0121] The cleaning liquid nozzle 64 is attached to the inner wall of the processing chamber 50 . While the substrate W is held by the spin chuck 51 , the spin base 51A rotates and the cleaning liquid is discharged from the cleaning liquid nozzle 64 .

[0122] The cleaning liquid ejected from the cleaning liquid nozzle 64 bounces off the upper surface of the substrate W and scatters into the processing chamber 50. By scattering the cleaning liquid in this way, various components (such as the back shielding plate 170 and the processing cup 511) arranged in the processing chamber 50 can be cleaned.

[0123] The processing cup 511 is disposed so as to surround the spin chuck 51 and is raised and lowered in the vertical direction by a motor (not shown). The upper portion of the processing cup 511 is raised and lowered between an upper position where the upper end is above the substrate W held on the spin base 51A and a lower position where the upper end is below the substrate W or below the substrate W.

[0124] The processing liquid splashing out from the upper surface of the substrate W is blocked by the inner side of the processing cup 511. The processing liquid blocked by the processing cup 511 is appropriately discharged to the outside of the processing chamber 50 at the bottom of the processing chamber 50 through the drain port 513 provided inside the processing cup 511.

[0125] In addition, an exhaust port 515 is provided at a side portion of the processing chamber 50. Through the exhaust port 515, the atmosphere in the processing chamber 50 is appropriately exhausted to the outside of the processing chamber 50.

[0126] Figure 3 This is a cross-sectional view schematically showing an example of the structure of the back side shielding plate 170 and its surroundings in the substrate processing apparatus according to the present embodiment.

[0127] Figure 3 , there are shown a spin chuck 51 that holds a substrate W in a horizontal position and rotates the substrate W around a rotation axis Z, a back shielding plate 170 that is disposed opposite to the lower surface of the substrate W, a housing 171 that covers the spin chuck 51, and a processing cup 511 that surrounds the housing 171 around the rotation axis Z of the substrate W. In addition, the moving part 190 is not shown in this cross section.

[0128] The spin chuck 51 includes a disk-shaped spin base 51A that vacuum-adsorbs the lower surface of the substrate W, a rotation shaft 51C that extends downward from the center of the spin base 51A, and a rotation motor 51D that rotates the substrate W adsorbed on the spin base 51A by rotating the rotation shaft 51C.

[0129] A step portion 170A is formed on the upper surface of the back shielding plate 170. The step portion 170A is formed to extend along the circumferential direction of the back shielding plate 170. With respect to the step portion 170A, the distance between the upper surface of the back shielding plate 170 and the lower surface of the substrate W is shorter on the radially outer side (i.e., the side away from the spin base 51A) than on the radially inner side (i.e., the side close to the spin base 51A), that is, the gap region 180 is narrowed.

[0130] In addition, the back shielding plate 170 surrounds the periphery of the spin base 51A in a plan view, but a gap is formed between the spin base 51A and the back shielding plate 170. The back shielding plate 170 includes a gas supply portion 170B for supplying gas (for example, N2 as an inert gas) toward the gap, that is, blowing the gas toward the spin base 51A from the inner wall of the back shielding plate 170 facing the spin base 51A. The gas supply portion 170B is provided on the inner side of the step portion 170A in the radial direction.

[0131] The gas supply unit 170B includes: an annular gas flow path 1700A as a flow path for the supplied gas; and a gas supply hole 1700B formed from the gas flow path 1700A through the inner wall of the back shielding plate 170 and serving as a hole for blowing the gas in the gas flow path 1700A toward the spin base 51A. Figure 3 In the figure, the blowing direction of the gas blown from the gas supply hole 1700B is perpendicular to the spin base 51A, but the direction may be inclined from the perpendicular direction to the spin base 51A toward the substrate W side or the opposite side thereof.

[0132] The gas supply unit 170B supplies N2 as an inert gas at, for example, 100 L to 500 L / min. The operation of the gas supply unit 170B is controlled by a control unit described later.

[0133] In addition, the back shielding plate 170 is provided on the inner wall of the back shielding plate 170 closer to the substrate W than the gas supply hole 1700B (ie, Figure 3 The distance between the inner wall of the back shielding plate 170 and the spin base 51A at the position where the protrusion 170C is formed is shorter than the distance between the inner wall of the back shielding plate 170 and the spin base 51A at the position where the protrusion 170C is not formed (for example, the position where the gas supply hole 1700B is formed).

[0134] Furthermore, the back shielding plate 170 includes a gas supply portion 170D for supplying a gas (for example, N 2 as an inert gas) to the gap region 180 , on the radially outer side of the step portion 170A.

[0135] The gas supply unit 170D includes: a ring-shaped gas flow path 1700C as a flow path for the supplied gas; and a gas supply hole 1700D formed to penetrate from the gas flow path 1700C to the upper side of the back shielding plate 170 and to be a hole for blowing the gas in the gas flow path 1700C toward the lower surface (back side) of the substrate W. Figure 3 In the figure, the blowing direction of the gas blown from the gas supply hole 1700D is vertically upward, but the direction may be inclined, for example, radially outward.

[0136] In addition, the gas supply unit 170D supplies N2 as an inert gas at, for example, 100L to 500L / min. In addition, a plurality of gas supply holes 1700D may be provided along the circumferential direction of the back shielding plate 170, in which case, for example, they are arranged at a pitch of 2mm to 10mm. Here, the operation of the gas supply unit 170D is controlled by a control unit described later.

[0137] The back shielding plate 170 is made of, for example, polyvinylidene fluoride (PVDF) having high chemical resistance.

[0138] Further, an annular reinforcement ring 181 is provided below the back shielding plate 170 to surround the spin base 51A similarly to the back shielding plate 170. Further, an annular base ring 182 is provided below the reinforcement ring 181 to surround the spin base 51A similarly to the back shielding plate 170.

[0139] The reinforcement ring 181 and the base ring 182 are made of, for example, polyetheretherketone (PEEK).

[0140] The back shielding plate 170 includes a connecting screw portion 170E that penetrates from the upper surface to the lower surface of the back shielding plate 170 and connects the back shielding plate 170 and the reinforcement ring 181 (further, the base ring 182 ).

[0141] Furthermore, an eaves portion 170F is formed at the outer edge of the rear shielding plate 170 . The eaves portion 170F extends radially outward from the upper end of the box body 171 located below the rear shielding plate 170 and covers the upper end of the box body 171 .

[0142] By forming the eaves 170F, it is possible to suppress the direct intrusion of the ambient gas of the processing liquid generated by the processing of the substrate W from below the back shielding plate 170. However, there is a path for the ambient gas of the processing liquid to indirectly penetrate into the bottom of the back shielding plate 170 from the gap between the eaves 170F and the upper end of the box 171, and further, from the discharge hole 171A provided in the box 171 for discharging the processing liquid, etc.

[0143] Figure 4 This is another cross-sectional view schematically showing an example of the structure of the back side shielding plate 170 and its surroundings in the substrate processing apparatus according to the present embodiment.

[0144] Figure 4 The figure shows the rotating chuck 51, the back shielding plate 170, the box 171, the processing cup 511, and the back shielding plate 170 along the vertical direction (ie, Figure 4 A moving part 190 that moves in the Z direction (in the horizontal direction).

[0145] The moving portion 190 includes a connecting portion 190A connected to the reinforcing ring 181 and the base ring 182 , a shaft 190B connected to the bottom of the connecting portion 190A and movable in the Z direction, and a spring 190C surrounding the shaft 190B and being expandable and contractible in the Z direction.

[0146] The shaft 190B is driven by a stepping motor (not shown) and moves in the Z direction. Thus, the back shielding plate 170 can move in the Z direction and can approach or move away from the substrate W. Here, the movement of the shaft 190B is controlled by a control unit described later.

[0147] Figure 5 1 is a perspective view showing an example of the spin chuck 51 and the back surface shielding plate 170 in a state where no substrate W is placed.

[0148] Figure 5 4 shows a spin base 51A on the upper surface of the spin chuck 51 and an annular back surface shielding plate 170 surrounding the spin base 51A.

[0149] Figure 6 1 is a cross-sectional view showing an example of the structure of a connecting screw portion 170E of the substrate processing apparatus according to the present embodiment. Figure 6 is corresponding to Figure 5 A cross-sectional view of a circumferential section XX′ of the back shielding plate 170 .

[0150] like Figure 6 For example, the connecting screw portion 170E connecting the back shielding plate 170 and the reinforcement ring 181 (and further, the base ring 182 ) connects the back shielding plate 170 and the moving portion 190 via the reinforcement ring 181 and the base ring 182 .

[0151] The connecting threaded portion 170E includes: an adjustment screw 1701B that brings the back shielding plate 170 and the reinforcement ring 181 (further, the base ring 182) closer to each other by being tightened, and an adjustment screw 1701C that forms a gap between the reinforcement ring 181 and the base ring 182 by being pressed in; and a cap 1701A that covers the adjustment screw 1701B and the adjustment screw 1701C respectively.

[0152] According to the above structure, by adjusting the pressing condition of the adjustment screw 1701B and the tightening condition of the adjustment screw 1701C, that is, by adjusting the distance (connection distance) between the back shielding plate 170 and the movable part 190 connected via the reinforcement ring 181 and the base ring 182, the flatness of the back shielding plate 170 can be adjusted and the distance relative to the substrate W (that is, the width of the gap area 180) can be controlled with high precision.

[0153] As described above, the distance between the substrate W and the back shielding plate 170 is controlled with high precision, thereby enabling the substrate W and the back shielding plate 170 to be brought close to each other with high precision without contact during the liquid chemical treatment or drying treatment described later. This prevents the liquid chemical from being embedded in the lower surface of the substrate W, and also improves the degree of dryness of the substrate W and the back shielding plate 170.

[0154] Here, the width of the gap region 180 is, for example, not less than 0.1 mm and not more than 1.0 mm. In addition, regarding the horizontal posture caused by the deflection of the substrate W, for example, it is assumed to be not more than 0.3 mm.

[0155] Figure 7 It is a cross-sectional view showing another example of the structure of the outer edge portion of the back surface shielding plate 170 of the substrate processing apparatus according to the present embodiment.

[0156] like Figure 7 For example, a cleaning liquid discharge portion 170G for discharging cleaning liquid toward the back end of the substrate W may be provided at the outer edge of the back shielding plate 170. The cleaning liquid discharge portion 170G may be provided at a plurality of locations in the circumferential direction of the back shielding plate 170. Cleaning liquid is supplied to the cleaning liquid discharge portion 170G from a cleaning liquid supply source (not shown). As the cleaning liquid, DIW (deionized water) or the like may be used.

[0157] Figure 7 In the example of FIG. 1 , the cleaning liquid discharge unit 170G is located radially inward of the eaves 170F and radially outward of the gas supply hole 1700D. In addition, the cleaning liquid discharge unit 170G is provided along the outer side of the back shielding plate 170, and the cleaning liquid discharged from the cleaning liquid discharge unit 170G reaches the back end of the substrate W along the outer side of the back shielding plate 170. The operation of the cleaning liquid discharge unit 170G is controlled by a control unit described later.

[0158] Figure 8 It is a perspective view showing another example of the structure of the outer edge portion of the back surface shielding plate 170 of the substrate processing apparatus according to the present embodiment.

[0159] like Figure 8 For example, the cleaning liquid discharge unit 170G is provided on the upper surface (inclined surface) of the flange portion 170F, and discharges the cleaning liquid vertically upward along the outer wall of the rear shielding plate 170. The cleaning liquid discharge unit 170G mainly cleans the rear end of the substrate W.

[0160] The cleaning liquid discharge part 170G discharges the cleaning liquid from a hole of φ0.5-2.0 (diameter 0.5mm-2.0mm). In addition, a plurality of cleaning liquid discharge parts 170G may be arranged circumferentially on the outer edge of the back shielding plate 170. In this case, for example, two to eight discharge parts may be arranged at equal intervals.

[0161] Fig. 9 It is a cross-sectional view showing another example of the structure of the outer edge portion of the back surface shielding plate 170 of the substrate processing apparatus according to the present embodiment.

[0162] like Fig. 9 For example, an imaging unit 200 for measuring the distance between the lower surface of the substrate W and the upper surface of the back shielding plate 170 may be provided at the outer edge of the back shielding plate 170. The imaging unit 200 is, for example, a CMOS camera.

[0163] The imaging unit 200 captures the side view shape of the rotating substrate W and the side view shape of the back shielding plate 170 multiple times from the radially outer side of the back shielding plate 170, and then measures the distance between the lower surface of the substrate W and the upper surface of the back shielding plate 170 on the respective racks based on image analysis. Thus, the imaging unit 200 can calculate the distance that the substrate W and the back shielding plate 170 can approach with high accuracy, so that the lower surface of the substrate W and the upper surface of the back shielding plate 170 are not in contact at the moment when the distance between the lower surface of the substrate W and the upper surface of the back shielding plate 170 is the smallest. In addition, the amount of warpage of the substrate W can be specified by the variation range of the distance between the lower surface of the substrate W and the upper surface of the back shielding plate 170.

[0164] In addition, the amount of deflection of the substrate W may be acquired from an external host computer or the like by the communication unit 78 described later, regardless of the imaging result of the imaging unit 200 .

[0165] Fig.10 1 is a functional block diagram showing an example of a connection relationship between each element of the substrate processing system 1 and the control unit 7 .

[0166] The hardware structure of the control unit 7 is the same as that of a general computer. That is, the control unit 7 includes: a central processing unit (CPU) 71 for performing various calculations; a read-only memory (ROM) 72 for storing basic programs as a read-only memory; a random access memory (RAM) 73 for storing various information as a freely readable and writable memory; and a non-volatile storage unit 74 for storing control applications (programs) or data.

[0167] The CPU 71 , the ROM 72 , the RAM 73 , and the storage unit 74 are connected to one another via bus wiring 75 or the like.

[0168] The control application or data may be provided to the control unit 7 in a state stored in a nonvolatile storage medium (eg, semiconductor memory, optical disk, magnetic disk, etc.). In this case, a reading device for reading the control application or data from the storage medium may be connected to the bus wiring 75.

[0169] In addition, the control application and data may be provided to the control unit 7 from a server or the like via a network. In this case, the external device and the communication unit that performs network communication may be connected to the bus wiring 75 .

[0170] The bus wiring 75 is connected to an input unit 76, a display unit 77, and a communication unit 78. The input unit 76 includes various input devices such as a keyboard and a mouse. The operator inputs various information to the control unit 7 via the input unit 76. The display unit 77 is composed of a display device such as a liquid crystal monitor, and displays various information. The communication unit 78 communicates with an external host computer, etc., and receives information related to the driving amount of the motor of the moving unit 190, etc.

[0171] The control unit 7 is connected to the working parts of each substrate processing device (for example, the chemical liquid valve 56, the circulation valve 58, the rinse liquid valve 62, the cleaning liquid valve 66, the gate 50C, the rotation motor 51D, the gas supply unit 170B, the gas supply unit 170D, the shaft 190B, the cleaning liquid discharge unit 170G and the imaging unit 200, etc.), the driving unit that drives the conveying mechanism 31 (for example, a motor for the reciprocating movement of the conveying mechanism 31, etc.), the working part of the indexing robot 23 (for example, a motor for driving the multi-joint arm 23B, etc.), and the working part of the conveying robot 33 (for example, the horizontal motor 133C, the rotation motor 133D and the vertical motor 133H, etc.), and controls their actions.

[0172] <Operation of substrate processing apparatus>

[0173] Next, refer to Figure 11 to Figure 14 , the operation of the substrate processing apparatus related to this embodiment is described. Here, Fig.11 : is a flowchart showing the operation of the substrate processing system related to this embodiment. Fig.12 , Fig.13 as well as Fig.14 It is a diagram showing an example of a processing step of the substrate processing apparatus according to the present embodiment.

[0174] like Fig.11 For example, first, the substrate W contained in the substrate container 21 is carried into any substrate processing apparatus via the index robot 23, the transport mechanism 31, and the transport robot 33. Then, the substrate W is held on the spin chuck 51 ( Fig.11 Step ST1).

[0175] Then, the liquid treatment was performed ( Fig.11In the chemical liquid treatment, the chemical liquid is discharged from the chemical liquid nozzle 52 under the control of the control unit 7, thereby performing an etching treatment on the rotating substrate W. For example, the etching treatment on the substrate W is performed using fluorine nitrate which is a mixed solution of hydrogen fluoride (HF) and nitric acid (HNO3).

[0176] In addition, if Fig.12 For example, during the liquid chemical treatment, the moving unit 190 raises and lowers the back shielding plate 170 under the control of the control unit 7, so that the width of the gap region 180 in the Z direction is, for example, 0.1 mm or more and 1.0 mm or less at the radially outer side of the step portion 170A (i.e., the narrowest width of the gap region 180 in the Z direction). In addition, during the liquid chemical treatment, the rotary motor 51D is driven under the control of the control unit 7, so that the substrate W is rotated at a rotation speed of, for example, 100 rpm or more and 2000 rpm or less.

[0177] In addition, in order to prevent the chemical solution from spreading to the lower surface (back surface) of the substrate W during the chemical solution treatment, the gas supply hole 1700B (see Figure 3 and Figure 4 ) is supplied into the gap region 180 at, for example, 100 L to 500 L / min of an inert gas such as nitrogen (N2). Figure 3 and Figure 4 ) After the gas supplied is blown onto the rotating base 51A, a portion of it flows into the gap area 180 ( Figure 3 and Figure 4 The other part flows into the lower part of the back shielding plate 170 and the box body 171 ( Figure 3 and Figure 4 down direction).

[0178] Here, since the protrusion 170C is provided at a position closer to the substrate W than the gas supply hole 1700B, the gas supply hole 1700B (see Figure 3 and Figure 4 ) The ratio of the gas supplied by the back side to flow into the gap region 180 is suppressed, and on the contrary, the ratio of the gas supplied by the back side to flow into the bottom of the back shielding plate 170 and into the box body 171 is increased.

[0179] Furthermore, an inert gas such as nitrogen (N 2 ) is supplied from the gas supply holes 1700D into the gap region 180 (particularly, the back surface end of the substrate W) at a rate of, for example, 100 L to 500 L / min.

[0180] During the chemical treatment, the cleaning liquid can also be discharged from the cleaning liquid discharge unit 170G. Thus, the cleaning liquid film from below the substrate W obtained by the cleaning liquid discharge unit 170G becomes a barrier, which can prevent the chemical liquid spreading from above the substrate W from entering the back end of the substrate W inward in the radial direction.

[0181] Then, the cleaning process is performed ( Fig.11 In the cleaning process, the cleaning liquid is ejected from the cleaning liquid nozzle 64 under the control of the control unit 7, thereby washing away the attachments attached to the substrate W, the back shielding plate 170, and the processing cup 511 (see Fig.13 During the cleaning process, the moving unit 190 raises and lowers the back shielding plate 170 under the control of the control unit 7 so that the width of the gap area 180 in the Z direction is longer than the width during the liquid treatment at the radially outer side of the step portion 170A (i.e., the narrowest part of the width of the gap area 180 in the Z direction), for example, 1.5 mm to 5 mm.

[0182] Since the cleaning liquid discharged from the cleaning liquid nozzle 64 also spreads to the lower surface (back surface) side of the substrate W, the cleaning liquid is also supplied to the back surface shielding plate 170 .

[0183] like Fig.13 For example, during the cleaning process, the substrate W and the back shielding plate 170 are cleaned. At this time, the cleaning liquid can also be discharged from the cleaning liquid discharge unit 170G. As a result, the liquid film of the cleaning liquid from the bottom of the substrate W obtained by the cleaning liquid discharge unit 170G becomes a barrier, which can prevent the cleaning liquid spreading from the top of the substrate W from entering the radial inner side from the back end of the substrate W. In addition, the cleaning liquid is also discharged from the cleaning liquid discharge unit 170G, thereby effectively removing the liquid on the lower surface of the substrate W that cannot be removed by the cleaning liquid nozzle 64 alone.

[0184] In order to supply the cleaning liquid ejected vertically upward from the cleaning liquid ejection portion 170G to the back end of the substrate W, it is desirable that the outer edge of the substrate W protrudes radially outward from the outer edge of the back shielding plate 170 . Fig.13 In the example, the outer edge of the substrate W protrudes outward in the radial direction from the outer edge of the back shielding plate 170 by, for example, 0.5 mm to 3 mm.

[0185] In addition, during the cleaning process, gas is supplied from the gas supply hole 1700B (see Figure 3 and Figure 4 ) An inert gas such as nitrogen (N2) is supplied into the gap region 180 at, for example, 100 L to 500 L / min. Furthermore, an inert gas such as nitrogen (N2) is also supplied into the gap region 180 (especially the back end of the substrate W) at, for example, 100 L to 500 L / min from the gas supply hole 1700D.

[0186] In addition, in the above-mentioned cleaning process, cleaning is performed by the cleaning liquid ejected from the cleaning liquid nozzle 64, but it is also possible, for example, that in the rinsing process in which the rinsing liquid is ejected from the rinsing liquid nozzle 60, the rinsing liquid is supplied to the gap area 180, thereby cleaning the substrate W and the back shielding plate 170.

[0187] Then, drying process ( Fig.11 In step ST4 of the drying process, the spin base 51A is rotated under the control of the control unit 7, thereby drying the substrate W and the back shielding plate 170.

[0188] In addition, if Fig.14 For example, during the drying process, the moving unit 190 moves the back shielding plate 170 upward and downward under the control of the control unit 7 so that the width of the gap region 180 in the Z direction becomes, for example, 0.1 mm or more and 1.0 mm or less. In this state, the lower surface of the substrate W and the upper surface of the opposing back shielding plate 170 are in close contact.

[0189] In addition, during the drying process, gas is supplied from the gas supply hole 1700B (see Figure 3 and Figure 4 ) An inert gas such as nitrogen (N2) is supplied into the gap region 180 at, for example, 100 L to 500 L / min. Furthermore, an inert gas such as nitrogen (N2) is also supplied into the gap region 180 (especially the back end of the substrate W) from the gas supply hole 1700D at, for example, 100 L to 500 L / min.

[0190] In the drying process, the cleaning liquid adhering to the substrate W and the back shielding plate 170 is scattered by the rotation of the substrate W.

[0191] Specifically, the cleaning liquid attached to the upper and lower surfaces of the substrate W is scattered from the outer edge of the substrate W to the periphery of the substrate W by the centrifugal force generated by the rotation of the substrate W.

[0192] In addition, the cleaning liquid attached to both the lower surface of the substrate W and the upper surface of the back shielding plate 170 (i.e., the cleaning liquid having a particle size of droplets larger than the width of the gap region 180 in the Z direction) is pushed toward the outer edge of the substrate W due to the centrifugal force generated by the rotation of the substrate W on the side in contact with the lower surface of the substrate W, and is further scattered around the substrate W.

[0193] In addition, the cleaning liquid (i.e., the cleaning liquid having a droplet size smaller than the width of the gap region 180 in the Z direction) that is only attached to the upper surface of the back shielding plate 170 is pushed toward the outer edge of the substrate W due to the flow of the ambient gas (containing fine particles suspended in the gap region 180) radially outward generated by the rotation of the substrate W (for example, the circumferential speed is 20 to 60 m / s), and is further scattered around the substrate W.

[0194] In the center of the substrate W, the cleaning liquid attached to the lower surface of the substrate W and the cleaning liquid attached to the upper surface of the back shielding plate 170 are mainly discharged from the gas supply hole 1700B (see Figure 3 and Figure 4) is pushed toward the outer edge of the substrate W.

[0195] On the other hand, at the outer edge of the substrate W, the effect of the centrifugal force generated by the rotation of the substrate W becomes greater, and thus the weakened effect of the inert gas supplied from the central portion of the back shielding plate 170 can be supplemented.

[0196] Here, it is desirable to remove all the cleaning liquid in the drying process, but it is not limited to the case where all the cleaning liquid must be removed. Fig.14 For example, there is a case where the cleaning liquid ejected from the cleaning liquid ejection unit 170G remains on the back shielding plate 170, but since the cleaning liquid ejection unit 170G is positioned along the outer side surface of the back shielding plate 170, the cleaning liquid is likely to remain on the outer side surface of the back shielding plate 170. Therefore, even if the cleaning liquid remains, it is unlikely to affect the processing of the substrate W.

[0197] Then, the processed substrate W is removed from the spin chuck 51, and the substrate W is carried out of the substrate processing apparatus, and the operation is terminated ( Fig.11 Step ST5). When the substrate W is unloaded, the back shielding plate 170 is moved by the moving unit 190 so that the distance between the lower surface of the substrate W and the upper surface of the back shielding plate 170 is, for example, 7 mm to 15 mm.

[0198] <Step section>

[0199] As described above, in the chemical solution treatment, the cleaning treatment, and the drying treatment, the gas is supplied from at least the gas supply holes 1700B, whereby the gas flows from the radially inner side to the radially outer side of the gap region 180 .

[0200] In this case, due to the step portion 170A formed on the upper surface of the back shielding plate 170 , the gap region 180 radially outward of the step portion 170A has a narrower width in the Z direction than the gap region 180 radially inward.

[0201] Therefore, the gas supplied from the gas supply hole 1700B has a uniform pressure on the radial inner side of the step portion 170A, and is discharged to the radial outer side of the step portion 170A in a uniform pressure state. Therefore, the spread of the processing liquid (for example, the chemical solution, the cleaning liquid, the processing liquid that becomes the ambient gas, or the processing liquid that rebounds to the processing cup 511, etc.) can be effectively suppressed by the discharge of the gas with uniform pressure. In addition, the processing liquid attached to the substrate W and the back shielding plate 170 can also be effectively removed (mainly drying treatment).

[0202] <Modification example of step portion>

[0203] Fig.15It is a cross-sectional view schematically showing a modified example of the step portion of the back shielding plate.

[0204] like Fig.15 For example, the back shielding plate 170X includes a plurality of step portions 172. The step portions 172 are formed along the circumferential direction of the back shielding plate 170X. In the portion where the step portions 172 are formed, the gap region 180 is narrower on the radially outer side than on the radially inner side.

[0205] In the portion where the step portion 172 is formed, the gas is blocked on the radially inner side of the step portion 172 to generate a pressure loss, thereby making the pressure uniform, and the gas is discharged to the radially outer side of the step portion 172 in a state of uniform pressure. Therefore, by discharging the gas with uniform pressure, the spread of the processing liquid relative to the lower surface of the substrate W can be suppressed.

[0206] Fig.16 It is a cross-sectional view schematically showing another modified example of the step portion of the back shielding plate.

[0207] like Fig.16 For example, the back shielding plate 170Y includes a plurality of step portions 173. The step portions 173 are formed along the circumferential direction of the back shielding plate 170Y. The plurality of step portions 173 formed in a stepped shape narrow the gap region 180 on the radially outer side compared to the radially inner side.

[0208] By forming the step portion 173, the gas is blocked on the inner side in the radial direction, resulting in pressure loss, thereby making the pressure uniform, and further, the gas is discharged to the outer side in the radial direction in a state of uniform pressure. Therefore, by discharging the gas with uniform pressure, the spread of the processing liquid relative to the lower surface of the substrate W can be suppressed.

[0209] The shape formed on the upper surface of the back shielding plate and narrowing the width of the gap region 180 is not limited to the above-mentioned step portion, and may be, for example, an inclined shape that gradually narrows the width of the gap region 180 from the radial inside toward the radial outside.

[0210] <Effects of the above-described embodiments>

[0211] In the following description, the effects are described based on the specific structures of the above-described embodiment examples, but other specific structures exemplified in the present application specification may be substituted within the scope of producing the same effects.

[0212] According to the above-described embodiment, the substrate processing apparatus includes a holding portion, a rotation driving portion, and an opposing plate. Here, the holding portion corresponds to, for example, the rotating base 51A. In addition, the rotation driving portion corresponds to, for example, the rotating motor 51D. In addition, the opposing plate corresponds to, for example, the back shielding plate 170. The rotating base 51A rotatably holds the substrate W. The rotating motor 51D rotates the rotating base 51A. The back shielding plate 170 surrounds the rotating base 51A in a plan view. In addition, the back shielding plate 170 is arranged opposite to the substrate W. In addition, the back shielding plate 170 includes a first gas supply portion and at least one displacement portion. Here, the first gas supply portion corresponds to, for example, the gas supply portion 170B. In addition, the displacement portion corresponds to, for example, the step portion 170A. The gas supply portion 170B is provided on the inner side in the radial direction, and supplies gas at least between the substrate W and the back shielding plate 170. The step portion 170A is provided on the surface opposite to the substrate W which is radially outward of the gas supply portion 170B. In addition, the distance between the step portion 170A and the substrate W is shorter on the radially outer side than on the radially inner side.

[0213] According to such a structure, the gas supplied from the gas supply hole 1700B is blocked on the radial inner side of the step portion 170A and generates a pressure loss, thereby making the pressure uniform, and further, the gas is discharged to the radial outer side of the step portion 170A in a state of uniform pressure. Therefore, by discharging the gas with uniform pressure, it is possible to effectively suppress the spread of the processing liquid on the lower surface of the substrate W. In addition, it is also possible to effectively remove the processing liquid attached to the substrate W and the back shielding plate 170 (mainly a drying process).

[0214] In addition, even when other structures exemplified in the specification of the present application are appropriately added to the above-mentioned structure, that is, even when other structures in the specification of the present application that are not mentioned as the above-mentioned structure are appropriately added, the same effect can be produced.

[0215] In addition, according to the above-described embodiment, the back shielding plate 170 includes a second gas supply portion for supplying gas between the substrate W and the back shielding plate 170 on the radially outer side of the step portion 170A. Here, the second gas supply portion corresponds to the gas supply portion 170D, for example. According to such a structure, even if the uniformity of the gas pressure is insufficient due to the working accuracy of the material (resin, etc.) constituting the back shielding plate 170, the uniformity of the gas pressure can be supplemented by auxiliary supply of gas from the gas supply hole 1700D.

[0216] According to the above-described embodiment, a plurality of step portions 172 or 173 are provided in the radial direction of the back shielding plate 170. With such a configuration, temporary gas blocking occurs at a plurality of radial locations, and thus the uniformity of the pressure of the gas exhausted from the gap region 180 is improved.

[0217] According to the above-described embodiments, the step portion 170A, the step portion 172 or the step portion 173 is a step shape extending in the circumferential direction of the back shielding plate 170. With such a configuration, the gas can be discharged with uniform pressure over the entire circumference of the back shielding plate 170.

[0218] In addition, according to the above-described embodiment, the gas supply unit 170B supplies gas toward the spin base 51A. According to such a structure, part of the gas sprayed from the gas supply hole 1700B to the spin base 51A flows into the gap area 180, and the other part flows into the bottom of the back shielding plate 170 and the inside of the box 171. Therefore, in addition to being able to suppress the processing liquid and the like from entering the gap area 180, it is also possible to suppress the processing liquid and the like from entering the bottom of the back shielding plate 170 and the inside of the box 171.

[0219] In addition, according to the above-described embodiment, the gas supply portion 170B is provided on the radially inner side of the back shielding plate 170. Furthermore, the back shielding plate 170 includes a protrusion 170C, which is provided on the radially inner side and is closer to the substrate W than the gas supply portion 170B. According to such a structure, the ratio of the gas flowing from the gas supply hole 1700B to the bottom of the back shielding plate 170 and the inside of the housing 171 increases, so that the processing liquid (for example, a chemical solution, a cleaning liquid, a processing liquid that becomes an ambient gas, or a processing liquid that rebounds to the processing cup 511, etc.) can be suppressed from entering the bottom of the back shielding plate 170 and the inside of the housing 171. In addition, the gas is temporarily blocked by the protrusion 170C, and the pressure at this part becomes uniform, so the uniformity of the pressure of the gas flowing to the gap area 180 can be improved.

[0220] In addition, according to the above-described embodiment, the substrate processing apparatus includes a moving part 190 and a control part 7. The moving part 190 is connected to the back shielding plate 170, and moves the back shielding plate 170 closer to or farther from the substrate W. The control part 7 controls the operation of the moving part 190. According to such a structure, the distance between the substrate W and the back shielding plate 170 can be changed in accordance with the content of the substrate processing, so that the width of the effective gap region 180 can be realized in each process.

[0221] In addition, according to the above-described embodiment, the substrate processing apparatus includes an adjustment unit for adjusting the connection distance between the moving unit 190 and the back shielding plate 170. Here, the adjustment unit corresponds to, for example, the adjustment screw 1701B or the adjustment screw 1701C. According to such a structure, by adjusting the pushing condition of the adjustment screw 1701B and the tightening condition of the adjustment screw 1701C, the distance between the back shielding plate 170 and the substrate W (that is, the width of the gap area 180) can be controlled while taking into account the change of the gap area 180 caused by its own weight or wind pressure.

[0222] In addition, according to the above-described embodiment, the substrate processing apparatus includes the imaging unit 200 for imaging the substrate W. Furthermore, the control unit 7 controls the movement of the moving unit 190 based on the shape of the substrate W in the side view in the image captured by the imaging unit 200. According to such a configuration, the distance between the lower surface of the substrate W and the upper surface of the back shielding plate 170 can be controlled with high precision using the captured image.

[0223] In addition, according to the above-described embodiment, the substrate processing device includes: a chemical liquid supply unit for supplying chemical liquid to the substrate W; and a cleaning liquid supply unit for supplying cleaning liquid to the substrate W. Here, the chemical liquid supply unit corresponds to, for example, the chemical liquid nozzle 52. In addition, the cleaning liquid supply unit corresponds to, for example, the cleaning liquid nozzle 64. Moreover, the control unit 7 controls the movement of the moving unit 190 so that the distance between the back shielding plate 170 and the substrate W during the period of supplying the cleaning liquid from the cleaning liquid nozzle 64 is longer than the distance between the back shielding plate 170 and the substrate W during the period of supplying the chemical liquid from the chemical liquid nozzle 52. According to such a structure, it is possible to suppress the spread of the chemical liquid to the lower surface of the substrate W, and it is possible to ensure that the cleaning liquid cleans the lower surface of the substrate W in a large range.

[0224] In addition, according to the above-described embodiment, the back shielding plate 170 of the substrate processing device is provided with an end cleaning liquid discharge portion which is provided on the side surface along the outer side in the radial direction and is used to discharge the cleaning liquid to the end of the substrate W. Here, the end cleaning liquid discharge portion corresponds to, for example, the cleaning liquid discharge portion 170G. According to such a structure, the liquid film of the cleaning liquid from the bottom of the substrate W obtained by the cleaning liquid discharge portion 170G becomes a barrier, and it is possible to suppress the processing liquid (chemical liquid or cleaning liquid, etc.) spreading from the top of the substrate W from entering the radial inner side from the back end of the substrate W. In addition, by also discharging the cleaning liquid from the cleaning liquid discharge portion 170G, it is possible to effectively remove the chemical liquid, etc. on the lower surface of the substrate W that cannot be removed by the cleaning liquid nozzle 64 alone. In addition, the cleaning liquid discharge portion 170G is located on the outer side surface of the back shielding plate 170, so the part where the cleaning liquid is likely to remain is the outer side surface of the back shielding plate 170. Therefore, even if the cleaning liquid remains, it is difficult to affect the processing of the substrate W.

[0225] <Modification of the above-described embodiment>

[0226] In the above-described embodiments, the material, size, shape, relative configuration relationship or implementation conditions of each structural element are sometimes recorded, but these are only examples in all aspects and are not limited to the contents described in the specification of this application.

[0227] Therefore, numerous modifications and equivalents not shown in the examples can be conceived within the technical scope disclosed in the present specification, including, for example, modifications, additions, or omissions of at least one structural element.

[0228] In the above-described embodiments, when a material name or the like is described without particular designation, it means that the material contains other additives, for example, an alloy, etc., unless there is any contradiction.

Claims

1. A substrate processing device, characterized in that: have: a holding portion for rotatably holding the substrate; a rotation driving unit configured to rotate the holding unit; and an opposing plate which surrounds the holding portion and faces the substrate in a plan view, The above-mentioned opposing plate has: a first gas supply portion, which is disposed radially inward and is used to supply gas at least between the substrate and the opposing plate; a stepped portion having a stepped shape, which is provided on a surface facing the substrate on the radially outer side of the first gas supply portion and extends in the circumferential direction of the facing plate in a manner that a distance between the substrate and the radially outer side is shorter than a distance between the substrate and the radially inner side; as well as a second gas supply portion extending radially outward from the step portion toward an end of the substrate and configured to supply gas vertically upward to a gap region sandwiched between the upper surface of the opposing plate and the lower surface of the substrate, The vertical width of the gap region is not less than 0.1 mm and not more than 1.0 mm.

2. The substrate processing device according to claim 1, characterized in that: The opposing plate further includes a second gas supply portion on the outer side in the radial direction of the displacement portion, the second gas supply portion being configured to supply gas between the substrate and the opposing plate.

3. The substrate processing device according to claim 1, characterized in that: A plurality of the displacement portions are provided in the radial direction of the opposing plate.

4. The substrate processing device according to claim 1, characterized in that: The displacement portion has a step shape extending in a circumferential direction of the opposing plate.

5. The substrate processing apparatus according to claim 1, wherein: The first gas supply unit supplies the gas toward the holding unit.

6. The substrate processing apparatus according to claim 1, wherein: The first gas supply portion is provided on a radially inner side of the opposing plate. The opposing plate further includes a protrusion provided on a radially inner side surface and closer to the substrate than the first gas supply portion.

7. The substrate processing apparatus according to claim 1, wherein: Also available: a moving portion connected to the opposing plate and used to move the opposing plate closer to or farther away from the substrate; and The control unit is used to control the movement of the moving unit.

8. The substrate processing apparatus according to claim 1, wherein: The opposing plate further includes an end cleaning liquid discharge portion, which is provided along a radially outer side surface and is used to discharge the cleaning liquid toward the end of the substrate.

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