Epitaxial structure of semiconductor power device and radio frequency device

Abstract

The invention relates to the technical field of semiconductor photoelectric devices, and particularly discloses an epitaxial structure of a semiconductor power device and a radio frequency device. The epitaxial structure of the semiconductor power device and the radio frequency device sequentially comprises a substrate, a channel layer and a barrier layer from bottom to top, and a three-dimensional electron gas layer is formed on the interface of the barrier layer and a communication layer; according to the epitaxial structure of the semiconductor power device and the radio frequency device, high-concentration three-dimensional electron gas is formed by controlling the saturation electron drift rate interface steep degree, the breakdown field strength interface steep degree and the forbidden bandwidth interface steep degree at the interface of the barrier layer and the communication layer, so that the on-resistance and the on-loss of a unit area are reduced; the interface separation energy change angle, the interface longitudinal sound velocity change angle, the interface covalent bond energy change angle and the interface valence band effective state density change angle at the interface of the barrier layer and the communication layer are modulated, the thermal strain, the switching loss and the recovery loss of the device are reduced, and the heat conduction and heat dissipation capabilities of the device are enhanced.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to an epitaxial structure of a semiconductor power device and a radio frequency device. Background Art

[0002] GaN power devices and RF devices have many advantages, such as large bandgap, large critical breakdown electric field, small size, high frequency, high electron density, high electron saturation drift rate, high critical electric field, high thermal conductivity, high voltage resistance, and good chemical stability. For example, the bandgap of GaN is 3.4eV, while that of silicon is 1.12eV, and the electron drift rate of GaN is 2.5 times that of Si. GaN power devices are based on a two-dimensional electron gas structure with high electron mobility. They use AlGaN / GaN lattice mismatch to generate stress. Under the interaction of spontaneous polarization and piezoelectric polarization, a large amount of two-dimensional electron gas is generated at the GaN interface. Under undoped conditions, the density of the two-dimensional electron gas can exceed 10 13 cm -2 , can be applied to HEMT high electron mobility transistor devices, or high-voltage power devices, and are widely used in power electronics devices, consumer electronics, data centers, industrial electromechanical, automotive electronics, smart grids, RF devices, 5G / 6G communications, photovoltaic inverters, new energy vehicles and other fields; GaN-HEMT power devices are divided into E-modeHEMT enhancement-mode devices and D-mode depletion-mode devices. Among them, E-modeHEMT enhancement-mode devices have the advantages of high speed, high power, high electron mobility, and high breakdown voltage. They are mainly used in GaN RF, 5G / 6G small base station RF front-end, wireless communication, laser radar and other fields, while D-mode depletion-mode devices have the advantages of low leakage current and simple driving circuit, and are mainly used in AC-DC conversion, DC-DC conversion and other fields.

[0003] GaN power devices and RF devices have the following problems: defects and lattice mismatch stress will produce leakage channels, causing performance failure and breakdown characteristics, leading to reliability failure; unbalanced carriers will vibrate the off-state electric field, resulting in electric field concentration, affecting the optical gain and the luminous efficiency of the laser, and the uneven electric field may increase the local thermal effect, affecting the stability and life of the laser; poor heat dissipation characteristics will affect reliability; Schottky-gate depletion-type GaN high electron mobility devices often face problems such as high gate leakage and low switching current ratio, causing the gate breakdown voltage to drop, and then resulting in high power consumption, gate leakage and device failure. Summary of the invention

[0004] The purpose of the present invention is to provide an epitaxial structure of a semiconductor power device and a radio frequency device with a simple structure and reasonable design in order to solve the above problems.

[0005] The present invention achieves the above-mentioned purpose through the following technical solutions:

[0006] An epitaxial structure of a semiconductor power device and a radio frequency device comprises, from bottom to top, a substrate, a channel layer and a barrier layer, wherein the interface between the barrier layer and the communication layer forms a three-dimensional electron gas layer; the peak position of the saturated electron drift rate of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a descending angle α toward the barrier layer, the valley position of the separation energy of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a rising angle β toward the barrier layer, the valley position of the longitudinal sound velocity of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a rising angle γ toward the barrier layer, the valley position of the covalent bond energy of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a rising angle θ toward the barrier layer, and the valley position of the valence band effective state density of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a rising angle σ toward the barrier layer, wherein 20°≤β≤θ≤γ≤α≤σ≤90°, and the angle is the tangent inclination angle along the curve.

[0007] Furthermore, the rising angle of the valley position of the piezoelectric polarization coefficient of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer toward the barrier layer is φ, the rising angle of the valley position of the bandgap width of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer toward the barrier layer is ψ, the decreasing angle of the peak position of the dielectric constant of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer toward the barrier layer is μ, and the decreasing angle of the peak position of the breakdown field strength of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer toward the barrier layer is υ, wherein: 10°≤μ≤ψ≤φ≤υ≤90°.

[0008] Furthermore, the saturated electron drift rate, dielectric constant, and the descending angle of the peak position of the breakdown field strength of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer, as well as the separation energy, longitudinal sound velocity, covalent bond energy, valence band effective state density, piezoelectric polarization coefficient, and the rising angle of the valley position of the bandgap width of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer, have the following relationship: 10°≤μ≤β≤θ≤γ≤α≤ψ≤φ≤υ≤σ≤90°.

[0009] Furthermore, the saturated electron drift rate distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=A+x+B*sinx curve distribution; the dielectric constant distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=C+x+D*sinx curve distribution; the breakdown field strength distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=E+x+F*sinx curve distribution; wherein: A, B, C, D, E, F are arbitrary values, and C≤E≤A.

[0010] Furthermore, the separation energy distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=G+H*x 2 -e x Curve distribution; the longitudinal sound velocity distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=I+J*x 2 -e x Curve distribution; the covalent bond energy distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=K+L*x 2 -e x Curve distribution; the valence band effective state density distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=M+N*x 2 -e x Curve distribution; the piezoelectric polarization coefficient distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=P+Q*x 2 -e x Curve distribution; the bandgap width distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=R+S*x 2 -e x Curved distribution; where G, H, I, J, K, L, M, N, P, Q, R, and S are arbitrary values, and P≤K≤R≤G≤I≤M.

[0011] Furthermore, a buffer layer and / or a first conductive type nitride semiconductor is provided between the substrate and the channel layer;

[0012] A second conductive type nitride semiconductor and / or a nitride contact layer is disposed above the barrier layer.

[0013] Further, the channel layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 to 50,000 μm. angstroms; the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 to 50,000 angstroms.

[0014] Furthermore, the buffer layer, the first conductive nitride semiconductor, the second conductive nitride semiconductor, and the nitride contact layer are any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the buffer layer is 5 to 60,000 angstroms; the thickness of the first conductive nitride semiconductor is 5 to 90,000 angstroms; the thickness of the second conductive nitride semiconductor is 10 to 40,000 angstroms; and the thickness of the nitride contact layer is 5 to 500 angstroms.

[0015] Furthermore, the substrate includes sapphire, silicon, Ge, SiC, Cu, W, TiW, Mo, diamond, Ga2O3, AlN, GaN, GaAs, GaSb, InSb, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, MgO, spinel, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0016] The beneficial effects of the present invention are as follows: the present invention forms a high-concentration three-dimensional electron gas by controlling the steepness of the saturated electron drift rate interface, the steepness of the dielectric constant interface, the steepness of the breakdown field strength interface, and the steepness of the bandgap width interface at the interface between the barrier layer and the communication layer, thereby improving the saturation rate of the power device, reducing the impedance of the drift layer, and thus reducing the on-resistance and conduction loss per unit area, greatly improving the withstand voltage characteristics and energy efficiency of the GaN power device, and the withstand voltage performance is improved from 300 to 600V to more than 600 to 6000V. At the same time, the interface separation energy change angle, the interface longitudinal sound velocity change angle, the interface covalent bond energy change angle, the interface valence band effective state density change angle, and the interface piezoelectric polarization coefficient change angle at the interface between the barrier layer and the communication layer are modulated to reduce the junction capacitance and phonon scattering, reduce the thermal strain, switching loss and recovery loss of the device, and enhance the thermal conduction and heat dissipation capabilities of the device, thereby increasing the device life from 10,000 to 20,000 hours to 50,000 to 100,000 hours. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic structural diagram of an epitaxial structure of a semiconductor power device and a radio frequency device according to an embodiment of the present invention;

[0018] Figure 2 It is a schematic structural diagram of an epitaxial structure of a semiconductor power device and a radio frequency device according to an embodiment of the present invention;

[0019] Figure 3 It is a schematic structural diagram of an epitaxial structure of a semiconductor power device and a radio frequency device according to an embodiment of the present invention;

[0020] Figure 4 It is a schematic structural diagram of an epitaxial structure of a semiconductor power device and a radio frequency device according to an embodiment of the present invention.

[0021] In the figure: 100, substrate; 101, communication layer; 102, barrier layer; 103, buffer layer; 104, first conductive type nitride semiconductor; 105, second conductive type nitride semiconductor; 106, nitride contact layer. DETAILED DESCRIPTION

[0022] The present application is further described in detail below in conjunction with the accompanying drawings. It is necessary to point out here that the following specific implementation methods are only used to further illustrate the present application and cannot be understood as limiting the scope of protection of the present application. Technical personnel in this field can make some non-essential improvements and adjustments to the present application based on the above application content.

[0023] like Figure 1-Figure 4As shown, an epitaxial structure of a semiconductor power device and a radio frequency device comprises, from bottom to top, a substrate 100, a communication layer 101 and a barrier layer 102, wherein the interface between the barrier layer 102 and the communication layer 101 forms a three-dimensional electron gas layer; the peak position of the saturated electron drift rate of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 has a descending angle α toward the barrier layer 102, the valley position of the separation energy of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 has a rising angle β toward the barrier layer 102, and the barrier layer 102 has a peak position of the separation energy of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 has a rising angle β toward the barrier layer 102. The rising angle of the valley position of the longitudinal sound velocity of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 toward the barrier layer 102 is γ, the rising angle of the valley position of the covalent bond energy of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 toward the barrier layer 102 is θ, and the rising angle of the valley position of the valence band effective state density of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 toward the barrier layer 102 is σ, wherein 20°≤β≤θ≤γ≤α≤σ≤90°, and the angle is the inclination angle of the tangent along the curve.

[0024] The communication layer 101 (Channel Layer) is usually a semiconductor material with a small band gap. These materials have a high electron mobility and allow electrons to move freely in them. This layer forms a conductive channel in the heterojunction;

[0025] The barrier layer 102 is usually a semiconductor material with a large band gap, and its main function is to prevent the passage of electrons. It provides a barrier to limit the movement of electrons to a specific area;

[0026] Furthermore, the rising angle of the valley position of the piezoelectric polarization coefficient of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 toward the barrier layer 102 is φ, the rising angle of the valley position of the bandgap width of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 toward the barrier layer 102 is ψ, the decreasing angle of the peak position of the dielectric constant of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 toward the barrier layer 102 is μ, and the decreasing angle of the peak position of the breakdown field strength of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 toward the barrier layer 102 is υ, wherein: 10°≤μ≤ψ≤φ≤υ≤90°.

[0027] The piezoelectric coefficient is used to describe the ability of a material to generate electric polarization when subjected to mechanical stress. The piezoelectric effect is a phenomenon in which some materials produce charge separation when mechanical stress is applied, thereby generating voltage on the surface of the material;

[0028] Bandgap refers to the energy difference between the conduction band and the valence band in a semiconductor material. This is the minimum energy required for an electron to jump from the valence band to the conduction band. The bandgap determines the conductivity of the material as well as its optoelectronic properties;

[0029] Breakdown Electric Field refers to the electric field strength applied in the material. When the electric field strength exceeds this value, the insulating ability of the semiconductor will be destroyed, causing the material to suddenly become conductive, resulting in electrical breakdown.

[0030] In a specific embodiment, the saturated electron drift rate, dielectric constant, and the descending angle of the peak position of the breakdown field strength of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 toward the barrier layer 102, and the rising angle of the separation energy, longitudinal sound velocity, covalent bond energy, valence band effective state density, piezoelectric polarization coefficient, and bandgap width valley position of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 toward the barrier layer 102 have the following relationship: 10°≤μ≤β≤θ≤γ≤α≤ψ≤φ≤υ≤σ≤90°.

[0031] By controlling the steepness of the saturated electron drift rate interface, the dielectric constant interface, the breakdown field strength interface, and the bandgap width interface at the interface between the barrier layer 102 and the communication layer 101, a high-concentration three-dimensional electron gas is formed, the saturation rate of the power device is increased, the impedance of the drift layer is reduced, and the on-resistance and conduction loss per unit area are reduced, thereby greatly improving the withstand voltage characteristics and energy efficiency of the GaN power device.

[0032] In a specific embodiment, the saturated electron drift rate distribution of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 has a function y=A+x+B*sinx curve distribution; the dielectric constant distribution of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 has a function y=C+x+D*sinx curve distribution; the breakdown field strength distribution of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 has a function y=E+x+F*sinx curve distribution, wherein: A, B, C, D, E, F are arbitrary values, and C≤E≤A.

[0033] In a specific embodiment, the separation energy distribution of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 has a function y=G+H*x 2 -e x Curve distribution; the longitudinal sound velocity distribution of the three-dimensional electron gas layer at the interface of the barrier layer 102 and the communication layer 101 has a function y=I+J*x 2 -e xCurve distribution; the covalent bond energy distribution of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 has a function y=K+L*x 2 -e x Curve distribution; the valence band effective state density distribution of the three-dimensional electron gas layer at the interface of the barrier layer 102 and the communication layer 101 has a function y=M+N*x 2 -e x Curve distribution; the piezoelectric polarization coefficient distribution of the three-dimensional electron gas layer at the interface of the barrier layer 102 and the communication layer 101 has a function y=P+Q*x 2 -e x Curve distribution; the bandgap width distribution of the three-dimensional electron gas layer at the interface between the barrier layer 102 and the communication layer 101 has a function y=R+S*x 2 -e x Curved distribution, where G, H, I, J, K, L, M, N, P, Q, R, and S are arbitrary values, and P≤K≤R≤G≤I≤M.

[0034] In a specific embodiment, a buffer layer 103 and / or a first conductive type nitride semiconductor 104 may be provided between the substrate and the channel layer; and a first conductive type nitride semiconductor 105 and / or a nitride contact layer 106 may also be provided above the barrier layer 102 .

[0035] In a specific embodiment, the channel layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 to 50,000 μm. angstroms; the barrier layer 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 to 50,000 angstroms.

[0036] In a specific embodiment, the buffer layer 103, the first conductive type nitride semiconductor 104, the first conductive type nitride semiconductor 105, and the nitride contact layer 106 are GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InA s, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or any combination thereof; the thickness of the buffer layer 103 is 5 to 60,000 angstroms; the thickness of the first conductive nitride semiconductor 104 is 5 to 90,000 angstroms; the thickness of the first conductive nitride semiconductor 105 is 10 to 40,000 angstroms; the thickness of the nitride contact layer 106 is 5 to 500 angstroms.

[0037] In a specific embodiment, the substrate 100 includes sapphire, silicon, Ge, SiC, Cu, W, TiW, Mo, diamond, Ga2O3, AlN, GaN, GaAs, GaSb, InSb, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, MgO, spinel, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0038] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. An epitaxial structure of a semiconductor power device and a radio frequency device, comprising a substrate, a channel layer and a barrier layer from bottom to top, characterized in that: The interface between the barrier layer and the communication layer forms a three-dimensional electron gas layer; the peak position of the saturated electron drift rate of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a descending angle of α toward the barrier layer, the valley position of the separation energy of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a rising angle of β toward the barrier layer, the valley position of the longitudinal sound velocity of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a rising angle of γ toward the barrier layer, the valley position of the covalent bond energy of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a rising angle of θ toward the barrier layer, and the valley position of the valence band effective state density of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a rising angle of σ toward the barrier layer, wherein 20°≤β≤θ≤γ≤α≤σ≤90°, and the angle is the inclination angle of the tangent along the curve.

2. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 1, characterized in that: The rising angle of the valley position of the piezoelectric polarization coefficient of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer toward the barrier layer is φ, the rising angle of the valley position of the bandgap width of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer toward the barrier layer is ψ, the decreasing angle of the peak position of the dielectric constant of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer toward the barrier layer is μ, and the decreasing angle of the peak position of the breakdown field strength of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer toward the barrier layer is υ, wherein: 10°≤μ≤ψ≤φ≤υ≤90°.

3. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 2, characterized in that: The saturated electron drift rate, dielectric constant, and the descending angle of the peak position of the breakdown field strength of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer, as well as the separation energy, longitudinal sound velocity, covalent bond energy, valence band effective state density, piezoelectric polarization coefficient, and the rising angle of the valley position of the bandgap width of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer have the following relationship: 10°≤μ≤β≤θ≤γ≤α≤ψ≤φ≤υ≤σ≤90°.

4. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 3, characterized in that: The saturated electron drift rate distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=A+x+B*sinx curve distribution; the dielectric constant distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=C+x+D*sinx curve distribution; the breakdown field strength distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=E+x+F*sinx curve distribution; wherein: A, B, C, D, E, F are arbitrary values, and C≤E≤A.

5. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 4, characterized in that: The separation energy distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=G+H*x 2 -e x Curve distribution; the longitudinal sound velocity distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=I+J*x 2 -e x Curve distribution; the covalent bond energy distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=K+L*x 2 -e x Curve distribution; the valence band effective state density distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=M+N*x 2 -e x Curve distribution; the piezoelectric polarization coefficient distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=P+Q*x 2 -e x Curve distribution; the bandgap width distribution of the three-dimensional electron gas layer at the interface between the barrier layer and the communication layer has a function y=R+S*x 2 -e x Curved distribution; where G, H, I, J, K, L, M, N, P, Q, R, and S are arbitrary values, and P≤K≤R≤G≤I≤M.

6. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 5, characterized in that: A buffer layer and / or a first conductive type nitride semiconductor is arranged between the substrate and the channel layer; A second conductive type nitride semiconductor and / or a nitride contact layer is disposed above the barrier layer.

7. The epitaxial structure of a semiconductor power device and a radio frequency device according to any one of claims 1 to 6, characterized in that: The channel layer is any one or any combination of GaN, InGaN, InN, AlInN, Al InGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, Al InAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 to 50,000 angstroms; the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, Al InGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, Al Any one or any combination of InAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 5 to 50,000 angstroms.

8. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 1, characterized in that: The buffer layer, the first conductive nitride semiconductor, the second conductive nitride semiconductor, and the nitride contact layer are any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, Al InP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the buffer layer is 5 to 60,000 angstroms; the thickness of the first conductive nitride semiconductor is 5 to 90,000 angstroms; the thickness of the second conductive nitride semiconductor is 10 to 40,000 angstroms; and the thickness of the nitride contact layer is 5 to 500 angstroms.

9. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 1, characterized in that: The substrate includes sapphire, silicon, Ge, SiC, Cu, W, TiW, Mo, diamond, Ga2O3, AlN, GaN, GaAs, GaSb, InSb, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, MgO, spinel, ZrB2, LiAlO2 and LiGaO2 composite substrates.

Images