Photoelectric device, preparation method thereof and method for driving photoelectric device to emit light

Abstract

The invention provides a photoelectric device, a preparation method thereof and a method for driving the photoelectric device to emit light. The photoelectric device comprises a photoelectric device body and a friction power generation assembly, the photoelectric device body comprises an anode, a light-emitting layer and a cathode which are stacked, and the friction power generation assembly comprises a first electrode, a second electrode and a friction part; the first electrode and the second electrode are arranged at an interval, one of the first electrode and the second electrode is connected with the anode, the other is connected with the cathode, the friction part and the first electrode are oppositely arranged, a gap is formed between the friction part and the second electrode, and the friction part can generate friction with the first electrode to generate friction charges. When friction occurs between the friction part and the first electrode, the photoelectric device generates a direct current signal to drive the light-emitting layer to emit light.

Description

Technical Field

[0001] The present application belongs to the field of display technology, and in particular relates to an optoelectronic device and a method for preparing the same, and a method for driving the optoelectronic device to emit light. Background Art

[0002] Optoelectronic devices such as OLED (Organic Light-Emitting Diode) and QLED (Quantum Dot Light-Emitting Diode) are often used in the field of display technology. Among them, QLED has great development prospects in the display field due to its excellent characteristics such as high brightness, low power consumption, wide color gamut, high color purity, and easy processing.

[0003] At present, the method for driving QLED to emit light mainly relies on an external stable power supply. Controlling QLED with an external power supply can achieve stable output, but it limits the use environment of QLED, resulting in QLED not being able to be used normally in some special environments where an external stable power supply cannot be connected. Therefore, how to achieve self-powering of QLED has become an urgent problem to be solved in this field. Summary of the invention

[0004] The embodiments of the present application provide a photoelectric device and a method for preparing the same, and a method for driving the photoelectric device to emit light, so as to solve the problem that the existing photoelectric device cannot be self-powered.

[0005] In a first aspect, an embodiment of the present application provides a photoelectric device, comprising a photoelectric device body and a friction power generation component, wherein the photoelectric device body comprises a stacked anode, a light-emitting layer and a cathode, and the friction power generation component comprises a first electrode, a second electrode and a friction part; the first electrode and the second electrode are spaced apart, one of the first electrode and the second electrode is connected to the anode, and the other is connected to the cathode, the friction part is arranged opposite to the first electrode and a gap is provided between the friction part and the second electrode, and the friction part can generate friction charge by rotational friction with the first electrode.

[0006] Optionally, in some embodiments of the present application, when the friction charge on the friction part is negative, the first electrode is a positive electrode and connected to the anode; when the friction charge on the friction part is positive, the first electrode is a negative electrode and connected to the cathode.

[0007] Optionally, in some embodiments of the present application, a resistor is connected between the anode and the first electrode or the second electrode.

[0008] Optionally, in some embodiments of the present application, one of the first electrode and the second electrode is arranged on the back side of the photoelectric device body, and the other is arranged on the side side of the photoelectric device body; and / or, the surface area of ​​the friction portion facing the first electrode is larger than the surface area of ​​the first electrode facing the friction portion; and / or, the number of the first electrode and the second electrode are both multiple, and the multiple first electrodes are radially distributed on the surface of the photoelectric device body, and one end of the multiple first electrodes are connected together, and the multiple second electrodes correspond one-to-one to the multiple first electrodes.

[0009] Optionally, in some embodiments of the present application, the friction portion includes a substrate and a friction layer, the friction layer is formed on the surface of the substrate facing the first electrode, and the friction layer can rub against the first electrode so that the friction layer carries a friction charge.

[0010] Optionally, in some embodiments of the present application, the thickness of the first electrode is 50μm to 1mm; and / or, the thickness of the second electrode is 50μm to 100μm; and / or, the thickness of the friction layer is 50μm to 200μm; and / or, the spacing between the first electrode and the second electrode is 1mm to 3mm; and / or, the spacing between the second electrode and the friction layer is 50μm to 1mm.

[0011] Optionally, in some embodiments of the present application, the material of the friction layer is a polymer material, the material of the first electrode is a first metal material, and the material of the second electrode is a second metal material.

[0012] Optionally, in some embodiments of the present application, the polymer material is selected from one of polytetrafluoroethylene, polyvinylidene fluoride, polyamide and polyethylene terephthalate; and / or, the first metal material and the second metal material are independently selected from one of copper, silver, aluminum and platinum; and / or, the anode and the cathode are independently selected from a composite electrode formed by one or more of a metal electrode, a carbon electrode and a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from graphite, carbon nanotubes, graphene and At least one of carbon fibers; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2 ; and / or, the material of the light-emitting layer is selected from at least one of a single structure quantum dot and a core-shell structure quantum dot, the single structure quantum dot is selected from at least one of a II-VI group compound, a III-V group compound and a I-III-VI group compound, the II-VI group compound is selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe and CdZnSTe, the The III-V compound is selected from at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP, and the I-III-VI compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the core of the core-shell structure quantum dot is selected from any one of the above-mentioned single structure quantum dots, and the shell material of the core-shell structure quantum dot is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS;And / or, the optoelectronic device body further comprises a hole transport layer, the hole transport layer is arranged between the anode and the light-emitting layer, and the material of the hole transport layer is selected from poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine), polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4"-tri(carbazole-9-yl)triphenylamine, 4,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-bis(3-methylphenyl)- 1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, doped graphene, undoped graphene and one or more of C60; and / or, the optoelectronic device body further comprises a hole injection layer, the hole injection layer is arranged between the anode and the light-emitting layer, and the material of the hole injection layer is selected from poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, 2,3,6,7,10,11- One or more of hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polyester copper carbonate, transition metal oxides and transition metal sulfur compounds; and / or, the optoelectronic device body also includes an electron transport layer, the electron transport layer is arranged between the cathode and the light-emitting layer, the material of the electron transport layer is selected from one or more of inorganic electron transport materials and organic electron transport materials, the inorganic electron transport material is selected from one or more of doped or undoped zinc oxide, barium oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, cadmium sulfide, zinc sulfide, zinc tin, indium phosphide, gallium phosphide and barium titanate, wherein , the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium, the organic electron transport material includes one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds; and / or, the optoelectronic device body also includes an electron injection layer, the electron injection layer is arranged between the cathode and the light-emitting layer, and the material of the electron injection layer is selected from one or more of LiF, MgP, MgF2, Al2O3, Ga2O3, ZnO, Cs2CO3, RbBr, Rb2CO3 and LiF / Yb. ;

[0013] In the second aspect, an embodiment of the present application also provides a method for preparing a photoelectric device, the preparation method comprising the following steps: providing a photoelectric device body, the photoelectric device body comprising a stacked anode, a light-emitting layer and a cathode; providing a first electrode and a second electrode, one of the first electrode and the second electrode is arranged on the back side of the photoelectric device body, and the other is arranged on the side of the photoelectric device body, and a gap is provided between the first electrode and the second electrode, and one of the first electrode and the second electrode is connected to the anode, and the other is connected to the cathode; providing a friction part, the friction part is arranged opposite to the first electrode, and a gap is provided between the friction part and the second electrode, and the friction part can generate friction charge by rotational friction with the first electrode.

[0014] Optionally, in some embodiments of the present application, the first electrode is a positive electrode, the second electrode is a negative electrode, the first electrode is connected to the anode, and the second electrode is connected to the cathode; or the first electrode is a negative electrode, the second electrode is a positive electrode, the first electrode is connected to the cathode, and the second electrode is connected to the anode.

[0015] Optionally, in some embodiments of the present application, the surface area of ​​the friction portion facing the first electrode is larger than the surface area of ​​the first electrode facing the friction portion; and / or, arranging one of the first electrode and the second electrode on the back side of the photoelectric device body and the other on the side of the photoelectric device body includes: arranging multiple first electrodes on the back side of the photoelectric device body and distributing them radially, connecting one end of the multiple first electrodes together, and arranging multiple second electrodes on the side of the photoelectric device body and corresponding one to one with the multiple first electrodes.

[0016] Optionally, in some embodiments of the present application, connecting one of the first electrode and the second electrode to the anode and the other to the cathode includes: connecting one of the first electrode and the second electrode to a resistor and then to the anode, and connecting the other to the cathode.

[0017] Optionally, in some embodiments of the present application, the friction part includes a substrate and a friction layer formed on the surface of the substrate, and arranging the friction part relative to the first electrode includes: arranging a side of the substrate on which the friction layer is formed relative to the first electrode, and the friction layer can rub against the first electrode so that the friction layer carries a friction charge.

[0018] Optionally, in some embodiments of the present application, the thickness of the first electrode is 50μm to 1mm; and / or, the thickness of the second electrode is 50μm to 100μm; and / or, the thickness of the friction layer is 50μm to 200μm; and / or, the spacing between the first electrode and the anode is 1mm to 3mm; and / or, the spacing between the second electrode and the friction layer is 50μm to 1mm.

[0019] Optionally, in some embodiments of the present application, the material of the friction layer is a polymer material, the material of the first electrode is a first metal material, and the material of the second electrode is a second metal material.

[0020] Optionally, in some embodiments of the present application, the polymer material is selected from one of polytetrafluoroethylene, polyvinylidene fluoride, polyamide and polyethylene terephthalate; and / or, the first metal material and the second metal material are independently selected from one of copper, silver, aluminum and platinum; and / or, the anode and the cathode are independently selected from a composite electrode formed by one or more of a metal electrode, a carbon electrode and a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from graphite, carbon nanotubes, graphene and At least one of carbon fibers; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2 ; and / or, the material of the light-emitting layer is selected from at least one of a single structure quantum dot and a core-shell structure quantum dot, the single structure quantum dot is selected from at least one of a II-VI group compound, a III-V group compound and a I-III-VI group compound, the II-VI group compound is selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe and CdZnSTe, the The III-V compound is selected from at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP, and the I-III-VI compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the core of the core-shell structure quantum dot is selected from any one of the above-mentioned single structure quantum dots, and the shell material of the core-shell structure quantum dot is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS;And / or, the optoelectronic device body further comprises a hole transport layer, the hole transport layer is arranged between the anode and the light-emitting layer, and the material of the hole transport layer is selected from poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine), polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4"-tri(carbazole-9-yl)triphenylamine, 4,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-bis(3-methylphenyl)- 1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, doped graphene, undoped graphene and one or more of C60; and / or, the optoelectronic device body further comprises a hole injection layer, the hole injection layer is arranged between the anode and the light-emitting layer, and the material of the hole injection layer is selected from poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, 2,3,6,7,10,11- One or more of hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polyester copper carbonate, transition metal oxides and transition metal sulfur compounds; and / or, the optoelectronic device body also includes an electron transport layer, the electron transport layer is arranged between the cathode and the light-emitting layer, the material of the electron transport layer is selected from one or more of inorganic electron transport materials and organic electron transport materials, the inorganic electron transport material is selected from one or more of doped or undoped zinc oxide, barium oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, cadmium sulfide, zinc sulfide, zinc tin, indium phosphide, gallium phosphide and barium titanate, wherein , the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium, the organic electron transport material includes one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds; and / or, the optoelectronic device body also includes an electron injection layer, the electron injection layer is arranged between the cathode and the light-emitting layer, and the material of the electron injection layer is selected from one or more of LiF, MgP, MgF2, Al2O3, Ga2O3, ZnO, Cs2CO3, RbBr, Rb2CO3 and LiF / Yb. ;

[0021] In a third aspect, an embodiment of the present application also provides a method for driving a photoelectric device to emit light, the method comprising the following steps: providing a photoelectric device, the photoelectric device being the above-mentioned photoelectric device, or the photoelectric device being prepared by the above-mentioned preparation method; causing a friction portion of the photoelectric device to rotate and rub against a first electrode to generate friction charges, and the friction charges on the friction portion are transferred to a second electrode to drive the light-emitting layer to emit light.

[0022] Optionally, in some embodiments of the present application, the rotational speed of the friction part and the first electrode during rotational friction is 100 rpm to 500 rpm.

[0023] Optionally, in some embodiments of the present application, the friction part includes a substrate and a friction layer formed on the surface of the substrate, and causing the friction part to rotate and rub against the first electrode to generate friction charges includes: causing the friction layer to rotate and rub against the first electrode to generate friction charges.

[0024] In the optoelectronic device provided in the embodiment of the present application, the first electrode and the second electrode are arranged at intervals, so that one of the first electrode and the second electrode is connected to the anode of the optoelectronic device body, and the other is connected to the cathode of the optoelectronic device body, and the friction part is arranged opposite to the first electrode and a gap is provided between the friction part and the second electrode. When the friction part and the first electrode are subjected to rotational friction, friction charges are generated due to the friction electrification effect, and the friction part and the first electrode will both carry equal amounts of negative and positive charges, respectively (or the friction part and the first electrode may also carry equal amounts of positive and negative charges, respectively). Due to the principle of electrostatic induction, the second electrode will also carry a positive charge (that is, the second electrode and the first electrode carry the same charge), so that a high electric field is formed in the gap between the second electrode and the negatively charged friction part. When the breakdown threshold is reached, the air is broken down and conducts electricity, and the negative charge (or positive charge) on the surface of the friction part is transferred to the second electrode due to the conductive air, and then reaches the first electrode through the optoelectronic device body, forming a current loop, and finally generating a DC signal to drive the light-emitting layer to emit light, thereby realizing self-powering of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following is a brief introduction to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can also be obtained based on these drawings without creative work. In the following description, the same figure numbers represent the same parts.

[0026] Figure 1 A schematic diagram of the structure of the optoelectronic device provided in an embodiment of the present application.

[0027] Figure 2 A schematic structural diagram of the optoelectronic device body and the first electrode provided in an embodiment of the present application.

[0028] Figure 3 This is one of the structural schematic diagrams of the optoelectronic device body provided in the embodiments of the present application.

[0029] Figure 4 This is the second structural schematic diagram of the optoelectronic device body provided in the embodiment of the present application.

[0030] Figure 5 This is the third structural schematic diagram of the optoelectronic device body provided in the embodiment of the present application.

[0031] Figure 6 This is the fourth structural schematic diagram of the optoelectronic device body provided in the embodiment of the present application.

[0032] Figure 7 This is the fifth structural schematic diagram of the optoelectronic device body provided in the embodiment of the present application.

[0033] Figure 8 A flow chart of a method for preparing a photoelectric device provided in an embodiment of the present application.

[0034] Fig. 9 A flow chart of a method for driving an optoelectronic device to emit light provided in an embodiment of the present application.

[0035] Description of Figure Numbers:

[0036] 100, photoelectric device; 110, photoelectric device body; 111, anode; 112, light-emitting layer; 113, cathode; 114, hole transport layer; 115, hole injection layer; 116, electron transport layer; 117, electron injection layer; 121, first electrode; 122, second electrode; 123, friction part; 1231, substrate; 1232, friction layer. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0038] In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", refer specifically to the directions of the drawings in the accompanying drawings. In addition, in the description of the present application, the term "including" means "including but not limited to". Various embodiments of the present invention may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited numbers (fractional or integer) within the indicated range.

[0039] See also Figure 1 The embodiment of the present application provides a photoelectric device 100, which includes a photoelectric device body 110 and a friction power generation component, such as Figure 3 As shown, the optoelectronic device body 110 includes an anode 111, a light-emitting layer 112, and a cathode 113 arranged in layers, and the friction power generation component includes a first electrode 121, a second electrode 122, and a friction part 123; the first electrode 121 and the second electrode 122 are arranged at intervals, one of the first electrode 121 and the second electrode 122 is connected to the anode 111, and the other is connected to the cathode 113, the friction part 123 is arranged opposite to the first electrode 121, and a gap is provided between the friction part 123 and the second electrode 122, and the friction part 123 can rub with the first electrode 121 to generate friction charges. Among them, the "back side of the optoelectronic device body 110" refers to the side opposite to the light-emitting surface of the optoelectronic device body 110.

[0040] In the optoelectronic device 100 provided in the embodiment of the present application, the first electrode 121 and the second electrode 122 are arranged at intervals, so that one of the first electrode 121 and the second electrode 122 is connected to the anode 111 of the optoelectronic device body 110, and the other is connected to the cathode 113 of the optoelectronic device body 110, and the friction part 123 is arranged opposite to the first electrode 121 and a gap is provided between the friction part 123 and the second electrode 122. When the friction part 123 and the first electrode 121 are rotated and rubbed, friction charges are generated due to the frictional electrification effect, and the friction part 123 and the first electrode 121 will carry equal amounts of negative charge and positive charge (or the friction part 123 can also be the friction part 123). 23 and the first electrode 121 carry equal amounts of positive and negative charges, respectively), and due to the principle of electrostatic induction, the second electrode 122 will also carry positive charges (i.e., the second electrode 122 and the first electrode 121 carry the same charge), so that a high electric field is formed in the gap between the second electrode 122 and the negatively charged friction portion 123. When the breakdown threshold is reached, the air is broken down and conducts electricity, and the negative charges on the surface of the friction portion 123 are transferred to the second electrode 122 due to the conductive air, and then reach the first electrode 121 through the optoelectronic device body 110, forming a current loop, and finally generating a DC signal to drive the light-emitting layer 112 to emit light, thereby realizing self-powering of the optoelectronic device 100. If an external force is continuously applied to cause friction between the friction portion 123 and the first electrode 121, a continuous DC output can be obtained, thereby realizing continuous light emission of the optoelectronic device 100.

[0041] Optionally, in some embodiments of the present application, when the friction charge carried on the friction part 123 is negative, the first electrode 121 is positive and connected to the anode 111, and the second electrode 122 is negative and connected to the cathode 113; when the friction charge carried on the friction part 123 is positive, the first electrode 121 is negative and connected to the cathode 113, and the second electrode 122 is positive and connected to the anode 111.

[0042] Optionally, one of the first electrode 121 and the second electrode 122 is disposed on the back side of the optoelectronic device body 110, and the other is disposed on the side of the optoelectronic device body 110. For example, the first electrode 121 may be disposed on the back side of the optoelectronic device body 110, and the second electrode 122 may be disposed on the side of the optoelectronic device body 110; or, the second electrode 122 may be disposed on the back side of the optoelectronic device body 110, and the first electrode 121 may be disposed on the side of the optoelectronic device body 110.

[0043] In some embodiments of the present application, a resistor is connected between the anode 111 and the first electrode 121 or the second electrode 122. Specifically, when the friction charge on the friction part 123 is negative, the first electrode 121 is a positive electrode, a resistor is connected (connected in series) between the anode 111 and the first electrode 121, and the second electrode 122 is a negative electrode and connected to the cathode 113; when the friction charge on the friction part 123 is positive, the second electrode 122 is a positive electrode, a resistor is connected (connected in series) between the anode 111 and the second electrode 122, and the first electrode 121 is a negative electrode and connected to the cathode 113.

[0044] In some embodiments of the present application, the number of the first electrode 121 and the second electrode 122 are both multiple, and the multiple first electrodes 121 are radially distributed on the surface of the optoelectronic device body 110, and one end of the multiple first electrodes 121 is connected together, and the multiple second electrodes 122 correspond to the multiple first electrodes 121 one by one. The above structure can increase the contact area between the first electrode 121 and the friction part 123, thereby increasing the charge transferred from the friction part 123 to the second electrode 122 after electrostatic breakdown, and further can provide a nearly constant current output, so as to achieve continuous luminescence of the optoelectronic device 100. For example, Figure 2 As shown, multiple first electrodes 121 are arranged on the back side of the optoelectronic device body 110 and are distributed radially, and one end of the multiple first electrodes 121 are connected together, and multiple second electrodes 122 are arranged on the side of the optoelectronic device body 110, and the multiple second electrodes 122 correspond to the multiple first electrodes 121 one by one.

[0045] It should be noted that when the second electrode 122 is set on the side of the optoelectronic device body 110, the second electrode 122 should not exceed the light-emitting surface of the optoelectronic device body 110 as much as possible to avoid blocking the light of the optoelectronic device body 110. For example, one end face of the second electrode 122 can be set flush with the light-emitting surface of the optoelectronic device body 110.

[0046] In some embodiments of the present application, the surface area of ​​the friction portion 123 facing the first electrode 121 is larger than the surface area of ​​the first electrode 121 facing the friction portion 123, so that the friction portion 123 can cover all of the second electrodes 122 when rotational friction occurs with the first electrode 121, ensuring that electrostatic breakdown can be generated between the second electrode 122 and the friction portion 123, thereby providing a nearly constant current output, thereby achieving continuous luminescence of the optoelectronic device 100.

[0047] In some embodiments of the present application, the thickness H1 of the first electrode 121 is 50 μm to 1 mm, for example, the thickness H1 of the first electrode 121 may be 50 μm, 100 μm, 300 μm, 500 μm, 800 μm or 1000 μm, etc. If the thickness of the first electrode 121 is too large, the material cost may increase, and if the thickness is too small, sufficient friction charges may not be generated, and the photoelectric device 100 may not be driven to emit light.

[0048] In some embodiments of the present application, the thickness H2 of the second electrode 122 is 50 μm to 100 μm, for example, the thickness H2 of the second electrode 122 may be 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm, etc. If the thickness of the second electrode 122 is too large, the material cost may increase, and if the thickness is too small, sufficient current may not be generated, and the photoelectric device 100 may not be driven to emit light.

[0049] In some embodiments of the present application, the spacing L between the first electrode 121 and the second electrode 122 is 1 mm to 3 mm, for example, the spacing L between the first electrode 121 and the second electrode 122 can be 1 mm, 1.5 mm, 2 mm, 2.5 mm or 3 mm, etc., which can be set according to actual needs. By setting a gap between the first electrode 121 and the second electrode 122, it is possible to prevent the first electrode 121 from directly contacting the second electrode 122 and causing failure to generate electricity normally.

[0050] In some embodiments of the present application, the distance K between the second electrode 122 and the friction part 123 is 50μm to 1mm. For example, the distance K between the second electrode 122 and the friction part 123 can be 50μm, 100μm, 300μm, 500μm, 800μm or 1000μm.

[0051] See also Figure 1The friction part 123 includes a substrate 1231 and a friction layer 1232. The friction layer 1232 is formed on the surface of the substrate 1231 facing the first electrode 121. The friction layer 1232 can rub against the first electrode 121 to make the friction layer 1232 have a friction charge. Optionally, the substrate 1231 can be a glass substrate or an acrylic substrate or a substrate of other materials; the material of the friction layer 1232 is a polymer material, which can be selected from but not limited to one of polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF), polyamide (PA) and polyethylene terephthalate (PET); the material of the first electrode 121 is a first metal material, and the material of the second electrode 122 is a second metal material, and the first metal material and the second metal material are independently selected from one of copper (Cu), silver (Ag), aluminum (Al) and platinum (Pt), or the first metal material and the second metal material can also be other commonly used metal electrode materials. In this embodiment, the substrate 1231 is a glass substrate, the friction layer 1232 is a polytetrafluoroethylene film, the first electrode 121 is a copper electrode, the second electrode 122 is a copper foil tape, the first electrode 121 is connected to the anode 111 through a wire, and the second electrode 122 is connected to the cathode 113 through a wire, and the friction part 123 can rotate or slide relative to the first electrode 121 under the action of an external force, so that the polytetrafluoroethylene film and the copper electrode generate contact friction. It should be noted that in other embodiments of the present application, the friction layer 1232 can also be other friction materials, and the first electrode 121 and the second electrode 122 can also be other metal materials.

[0052] In some embodiments of the present application, the thickness H3 of the friction layer 1232 is 50 μm to 200 μm, for example, the thickness H3 of the friction layer 1232 may be 50 μm, 80 μm, 100 μm, 150 μm, 180 μm or 200 μm, etc. If the thickness of the friction layer 1232 is too large, the material cost may increase, and if the thickness is too small, it may be seriously damaged by friction and cannot generate enough current, and cannot play the role of driving the optoelectronic device 100 to emit light.

[0053] Optionally, the thickness of the anode 111 may range from 10 nm to 100 nm, for example, the thickness of the anode 111 may be 10 nm, 20 nm, 35 nm, 50 nm, 60 nm, 75 nm, 80 nm or 100 nm, etc.; the thickness of the cathode 113 may range from 15 nm to 100 nm, for example, the thickness of the cathode 113 may be 15 nm, 30 nm, 40 nm, 50 nm, 60 nm, 80 nm or 100 nm, etc. In some embodiments of the present application, the anode 111 and the cathode 113 may be independently selected from a composite electrode formed by one or more of a metal electrode, a carbon electrode, and a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, AZO, At least one of GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

[0054] The light-emitting layer 112 may be a quantum dot light-emitting layer, and the optoelectronic device 100 is a quantum dot light-emitting device. The thickness of the light-emitting layer 112 may be the thickness of the light-emitting layer 112 in a conventional quantum dot light-emitting device, for example, the thickness of the light-emitting layer 112 may range from 10 nm to 60 nm, such as 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 40 nm, 50 nm or 60 nm, or the thickness of the light-emitting layer 112 may range from 10 nm to 25 nm. The material of the quantum dot light-emitting layer is a quantum dot known in the art for a quantum dot light-emitting layer, such as one of a red quantum dot, a green quantum dot and a blue quantum dot. The material of the light-emitting layer 112 may be selected from but not limited to at least one of single structure quantum dots and core-shell structure quantum dots, the single structure quantum dots may be selected from at least one of II-VI group compounds, III-V group compounds and I-III-VI group compounds, the II-VI group compounds may be selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe and CdZnSTe , the III-V group compound is selected from at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP, the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the core of the core-shell structure quantum dot is selected from any one of the above-mentioned single structure quantum dots, and the shell material of the core-shell structure quantum dot is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS.

[0055] See also Figure 4In some embodiments of the present application, the optoelectronic device body 110 further includes a hole transport layer 114 , and the hole transport layer 114 is disposed between the anode 111 and the light-emitting layer 112 . The material of the hole transport layer 114 can be selected from organic materials having hole transport capability, including but not limited to poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine), polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4"-tri(carbazol-9-yl)triphenylamine, 4,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl) -1,1'-biphenyl-4,4'-diamine, doped graphene, undoped graphene and one or more of C60. The material of the hole transport layer 114 can also be selected from inorganic materials with hole transport capability, including but not limited to one or more of doped or undoped NiO, WO3, MoO3 and CuO. In some embodiments of the present application, the thickness of the hole transport layer 114 ranges from 10nm to 100nm, for example, the thickness of the hole transport layer 114 can be 10nm, 25nm, 30nm, 40nm, 50nm, 60nm or 100nm. Alternatively, the thickness of the hole transport layer 114 can range from 20nm to 60nm.

[0056] See also Figure 5 In some embodiments of the present application, the optoelectronic device body 110 further includes a hole injection layer 115, and the hole injection layer 115 is disposed between the anode 111 and the light-emitting layer 112. Figure 4As shown, when the optoelectronic device body 110 includes both the hole transport layer 114 and the hole injection layer 115, the hole transport layer 114 is disposed between the anode 111 and the light-emitting layer 112, and the hole injection layer 115 is disposed between the anode 111 and the hole transport layer 114. The material of the hole injection layer 115 may be a material known in the art for the hole injection layer 115, including but not limited to one or more of poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polyester copper carbonate, transition metal oxides, and transition metal sulfur compounds. Optionally, the thickness of the hole injection layer 115 ranges from 20 nm to 80 nm, for example, the thickness of the hole injection layer 115 may be 20 nm, 30 nm, 40 nm, 50 nm, 60 nm or 80 nm, etc. Alternatively, the thickness of the hole injection layer 115 may range from 20 nm to 60 nm.

[0057] See also Figure 6 In some embodiments of the present application, the optoelectronic device body 110 further includes an electron transport layer 116, which is disposed between the cathode 113 and the light-emitting layer 112. The material of the electron transport layer 116 may be a material known in the art for the electron transport layer 116, for example, it may be selected from, but not limited to, one or more of an inorganic electron transport material and an organic electron transport material, the inorganic electron transport material being selected from one or more of doped or undoped zinc oxide, barium oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, cadmium sulfide, zinc sulfide, zinc tin, indium phosphide, gallium phosphide, and barium titanate, wherein the doped element includes one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium, and the organic electron transport material includes one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds. Optionally, the thickness of the electron transport layer 116 ranges from 10 nm to 60 nm. For example, the thickness of the electron transport layer 116 may be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 40 nm, 50 nm or 60 nm.

[0058] See also Figure 7In some embodiments of the present application, the optoelectronic device body 110 further includes an electron injection layer 117, which is disposed between the cathode 113 and the light-emitting layer 112. The material of the electron injection layer 117 is selected from one or more of LiF, MgP, MgF2, Al2O3, Ga2O3, ZnO, Cs2CO3, RbBr, Rb2CO3, and LiF / Yb. The material of the electron injection layer 117 may be a material known in the art for the electron injection layer 117, for example, it may be selected from but not limited to one or more of LiF, MgP, MgF2, Al2O3, Ga2O3, ZnO, Cs2CO3, RbBr, Rb2CO3, and LiF / Yb. The thickness of the electron injection layer 117 may be the thickness of a conventional electron injection layer. In some embodiments of the present application, the thickness of the electron injection layer 117 ranges from 10 nm to 30 nm, for example, the thickness of the electron injection layer 117 may be 10 nm, 20 nm, or 30 nm.

[0059] It is understandable that, in addition to the above-mentioned functional layers, the optoelectronic device body 110 may also be provided with some functional layers conventionally used in optoelectronic devices 100 that help improve the performance of the optoelectronic device 100, such as a hole blocking layer, an interface modification layer, etc. The material and thickness of each functional layer of the optoelectronic device 100 may be adjusted according to the light-emitting requirements of the optoelectronic device 100.

[0060] In some embodiments of the present application, the optoelectronic device body 110 is a quantum dot light emitting diode. The optoelectronic device body 110 can be a quantum dot light emitting diode with an upright structure or a quantum dot light emitting diode with an inverted structure.

[0061] See also Figure 8 The present application also provides a method for preparing a photoelectric device 100. The method for preparing the photoelectric device 100 comprises the following steps:

[0062] Step S11: providing a photoelectric device body 110, wherein the photoelectric device body 110 includes a stacked anode 111, a light-emitting layer 112, and a cathode 113;

[0063] Step S12: providing a first electrode 121 and a second electrode 122, disposing one of the first electrode 121 and the second electrode 122 on the back side of the optoelectronic device body 110, and the other on the side of the optoelectronic device body 110, with a gap between the first electrode 121 and the second electrode 122, and connecting one of the first electrode 121 and the second electrode 122 to the anode 111, and connecting the other to the cathode 113;

[0064] Step S13: providing a friction part 123 , disposing the friction part 123 and the first electrode 121 opposite to each other with a gap between the friction part 123 and the second electrode 122 , so that the friction part 123 can rub against the first electrode 121 to generate friction charges.

[0065] Specifically, one of the first electrode 121 and the second electrode 122 is a positive electrode and the other is a negative electrode. When the first electrode 121 is a positive electrode and the second electrode 122 is a negative electrode, the first electrode 121 is connected to the anode 111 and the second electrode 122 is connected to the cathode 113; when the first electrode 121 is a negative electrode and the second electrode 122 is a positive electrode, the first electrode 121 is connected to the cathode 113 and the second electrode 122 is connected to the anode 111.

[0066] In some embodiments of the present application, the thickness H1 of the first electrode 121 in step S12 is 50 μm to 1 mm, for example, the thickness H1 of the first electrode 121 may be 50 μm, 100 μm, 300 μm, 500 μm, 800 μm or 1000 μm, etc. If the thickness of the first electrode 121 is too large, the material cost may increase, and if the thickness is too small, sufficient friction charges may not be generated, and the photoelectric device 100 may not be driven to emit light.

[0067] In some embodiments of the present application, the thickness H2 of the second electrode 122 is 50 μm to 100 μm, for example, the thickness H2 of the second electrode 122 may be 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm, etc. If the thickness of the second electrode 122 is too large, the material cost may increase, and if the thickness is too small, sufficient current may not be generated, and the photoelectric device 100 may not be driven to emit light.

[0068] In some embodiments of the present application, the spacing L between the first electrode 121 and the second electrode 122 is 1 mm to 3 mm, for example, the spacing L between the first electrode 121 and the second electrode 122 can be 1 mm, 1.5 mm, 2 mm, 2.5 mm or 3 mm, etc., which can be set according to actual needs. By setting a gap between the first electrode 121 and the second electrode 122, it is possible to prevent the first electrode 121 from directly contacting the second electrode 122 and causing failure to generate electricity normally.

[0069] In some embodiments of the present application, the spacing K between the second electrode 122 and the friction part 123 is 50 μm to 1 mm, for example, the spacing K between the second electrode 122 and the friction part 123 can be 50 μm, 100 μm, 300 μm, 500 μm, 800 μm or 1000 μm, etc. It can be understood that by setting a gap between the friction part 123 and the second electrode 122, an electric field is formed between the friction part 123 and the second electrode 122 for dielectric breakdown, so that the medium (air) changes from a dielectric state to a conductive state. The smaller the spacing K between the second electrode 122 and the friction part 123, the higher the charge breakdown efficiency, so that the photoelectric device 100 can be effectively powered for light emission, but if the spacing K is too small, the second electrode 122 may contact the friction part 123 to generate alternating current, and the photoelectric device 100 cannot achieve continuous light emission.

[0070] In some embodiments of the present application, in step S12, the step of disposing one of the first electrode 121 and the second electrode 122 on the back side of the optoelectronic device body 110 and the other on the side of the optoelectronic device body 110 includes: disposing multiple first electrodes 121 on the back side of the optoelectronic device body 110 and distributing them radially, connecting one end of the multiple first electrodes 121 together, and disposing multiple second electrodes 122 on the side of the optoelectronic device body 110 and corresponding to the multiple first electrodes 121 one by one. In this way, the contact area between the first electrode 121 and the friction portion 123 can be increased, thereby increasing the charge transferred from the friction layer 1232 to the second electrode 122 after electrostatic breakdown, thereby providing a nearly constant current output, and realizing continuous luminescence of the optoelectronic device 100. For example, Figure 2 As shown, multiple first electrodes 121 are arranged on the back side of the optoelectronic device body 110 and are distributed radially, and one end of the multiple first electrodes 121 are connected together, and multiple second electrodes 122 are arranged on the side of the optoelectronic device body 110, and the multiple second electrodes 122 correspond to the multiple first electrodes 121 one by one.

[0071] Preferably, the surface area of ​​the friction portion 123 facing the first electrode 121 is larger than the surface area of ​​the first electrode 121 facing the friction portion 123, so that the friction portion 123 can cover all of the second electrodes 122 when rotational friction occurs with the first electrode 121, ensuring that electrostatic breakdown can occur between the second electrode 122 and the friction portion 123, thereby providing a nearly constant current output, thereby achieving continuous luminescence of the optoelectronic device 100.

[0072] In some embodiments of the present application, in step S12, connecting one of the first electrode 121 and the second electrode 122 to the anode 111 and the other to the cathode 113 includes: connecting one of the first electrode 121 and the second electrode 122 to a resistor and then to the anode 111, and connecting the other to the cathode 113. In other words, a resistor is connected (in series) between the anode 111 and the positive electrode. Since the voltage generated by friction electrification and electrostatic breakdown of the optoelectronic device 100 may reach more than 100V, a series resistor is required for voltage division to protect the optoelectronic device 100 from being damaged. The resistance value of the resistor is not limited and can be determined according to the output voltage of the optoelectronic device 100 and the resistance of the optoelectronic device 100.

[0073] In some embodiments of the present application, the friction part 123 includes a substrate 1231 and a friction layer 1232 formed on the surface of the substrate 1231. The friction part 123 is arranged opposite to the first electrode 121, including: the side of the substrate 1231 formed with the friction layer 1232 is arranged opposite to the first electrode 121, and the friction layer 1232 can rub against the first electrode 121 so that the friction layer 1232 carries a friction charge. Among them, the materials of the components such as the substrate 1231, the friction layer 1232, the first electrode 121 and the second electrode 122 can refer to the relevant description in the previous text, and will not be repeated here. Specifically, the formation method of the structures such as the first electrode 121, the second electrode 122 and the friction layer 1232 includes but is not limited to evaporation method, pasting method, DC sputtering method, radio frequency sputtering method, magnetron sputtering method or pulsed laser deposition method.

[0074] In some embodiments of the present application, step S11 may include: sequentially forming a light-emitting layer 112 and a cathode 113 on the anode 111; or, sequentially forming a light-emitting layer 112 and an anode 111 on the cathode 113. Alternatively, step S11 may include: sequentially forming a hole injection layer 115 and / or a hole transport layer 114, a light-emitting layer 112, and a cathode 113 on the anode 111; or, sequentially forming a light-emitting layer 112, a hole transport layer 114 and / or a hole injection layer 115, and an anode 111 on the cathode 113. Alternatively, step S11 may include: sequentially forming a hole injection layer 115 and / or a hole transport layer 114, a light-emitting layer 112, an electron transport layer 116 and / or an electron injection layer 117 and a cathode 113 on the anode 111; or, sequentially forming an electron injection layer 117 and / or an electron transport layer 116, a light-emitting layer 112, a hole transport layer 114 and / or a hole injection layer 115 and an anode 111 on the cathode 113.

[0075] Specifically, the formation method of each layer structure of the anode 111, the light-emitting layer 112, the cathode 113, the hole transport layer 114, the hole injection layer 115, the electron transport layer 116 and the electron injection layer 117 of the optoelectronic device body 110 can be realized by conventional techniques in the art, including but not limited to solution method and deposition method, wherein the solution method includes but is not limited to spin coating, coating, inkjet printing, scraping, dip pulling, soaking, spraying, rolling or casting; the deposition method includes chemical method and physical method, and the chemical method includes but is not limited to chemical vapor deposition, continuous ion layer adsorption and reaction method, anodization method, electrolytic deposition method or coprecipitation method. Physical methods include but are not limited to thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion plating method, physical vapor deposition method, atomic layer deposition method or pulsed laser deposition method. When the solution method is used to prepare each layer structure, a drying process needs to be added. Among them, the drying process can be an annealing process. Among them, the "annealing process" includes all treatment processes that can enable the wet film to obtain higher energy, thereby changing from a wet film state to a dry state. For example, the "annealing process" can only refer to a heat treatment process, that is, heating the wet film to a specific temperature, and then maintaining it for a specific time to allow the solvent in the wet film to fully evaporate; for example, the "annealing process" can also include a heat treatment process and a cooling process performed in sequence, that is, heating the wet film to a specific temperature, and then maintaining it for a specific time to allow the solvent in the first wet film to fully evaporate, and then cooling it at an appropriate speed to eliminate residual stress and reduce the risk of layer deformation and cracking of the dry electron transport film.

[0076] The materials of the anode 111, the light-emitting layer 112, the cathode 113, the hole transport layer 114, the hole injection layer 115, the electron transport layer 116 and the electron injection layer 117 can refer to the relevant description in the previous text, and will not be repeated here. It is understandable that the optoelectronic device body 110 may also include other functional layers such as an electron blocking layer, a hole blocking layer and / or an interface modification layer.

[0077] It can be understood that after the above-mentioned layers of the structure of the optoelectronic device body 110 are prepared, step S11 can also include a packaging step. The packaging material can be acrylic resin or epoxy resin. The packaging can be machine packaging or manual packaging. UV curing glue can be used. The concentration of oxygen and water in the environment of the packaging step is lower than 0.1ppm to ensure the stability of the optoelectronic device 100.

[0078] See also Fig. 9 The embodiment of the present application further provides a method for driving the optoelectronic device 100 to emit light, and the method for driving the optoelectronic device 100 to emit light comprises the following steps:

[0079] S21: providing the above-mentioned optoelectronic device 100;

[0080] S22: The friction part 123 of the optoelectronic device 100 is rubbed with the first electrode 121 to generate friction charges, and the friction charges on the friction part 123 are transferred to the second electrode 122 to drive the light-emitting layer 112 to emit light.

[0081] See also Figure 1 The principle of the method for driving the photoelectric device 100 to emit light is as follows: the first electrode 121 and the friction part 123 are both friction materials. When the friction part 123 and the first electrode 121 move relative to each other and rub against each other, friction charges will be generated due to the friction electrification effect. The friction part 123 and the first electrode 121 will carry equal amounts of negative and positive charges, respectively (or the friction part 123 and the first electrode 121 may carry equal amounts of positive and negative charges, respectively). The friction part 123 is a kind of electret, and the negative charge on its surface can be retained. When the friction part 123 and the first electrode 121 move relative to each other and rub against each other, Due to the principle of electrostatic induction, the second electrode 122 will also carry a positive charge (i.e., the second electrode 122 and the first electrode 121 carry the same charge), so that a large electric field is formed between the second electrode 122 and the negatively charged friction part 123. When the breakdown threshold is reached, the air is broken down and conducts electricity. The negative charge (or positive charge) on the surface of the friction part 123 is transmitted to the second electrode 122 due to the conductive air, and then transmitted to the first electrode 121 through the external circuit (photoelectric device body 110), forming a current loop, and finally generating a DC signal to drive the light-emitting layer 112 to emit light, thereby realizing self-powering of the photoelectric device 100. If an external force is continuously applied to cause the friction part 123 to rub against the first electrode 121, a continuous DC output can be obtained, thereby realizing continuous light emission of the photoelectric device 100.

[0082] Among them, in the step S22, the rotational speed when the friction part 123 and the first electrode 121 rotate and rub against each other is 100rpm~500rpm, for example, it can be 100rpm, 200rpm, 300rpm, 400rpm or 500rpm, etc. When the friction part 123 and the first electrode 121 rotate and rub against each other, the higher the rotational speed, the greater the current generated, but too high a rotational speed will cause the first electrode 121 and the friction part 123 to wear and reduce their service life.

[0083] It can be understood that when the friction part 123 includes a substrate 1231 and a friction layer 1232 formed on the surface of the substrate 1231, causing the friction part 123 to rotate and rub with the first electrode 121 to generate friction charges includes: causing the friction layer 1232 to rotate and rub with the first electrode 121 to generate friction charges.

[0084] The technical scheme and technical effects of the present application will be described in detail below through specific examples and comparative examples. The following examples are only some examples of the present application and do not specifically limit the present application.

[0085] Example 1

[0086] This embodiment 1 provides a photoelectric device 100 and a method for driving the photoelectric device 100 to emit light, wherein the method for preparing the photoelectric device 100 includes the following steps:

[0087] Providing an ITO anode with a thickness of 75 nm, and then treating it with UV-ozone for 15 minutes after cleaning to improve the surface properties of the ITO anode;

[0088] The Petdot:PSS solution was spin-coated on the ITO anode and annealed at 150° C. for 15 min to obtain a hole injection layer 115 with a thickness of 40 nm;

[0089] A TFB-chlorobenzene solution was spin-coated on the hole injection layer 115 and annealed at 150° C. for 20 min to obtain a hole transport layer 114 with a thickness of 40 nm;

[0090] Spin-coat CdSe / ZnS green quantum dot material on the hole transport layer 114 and anneal at 100° C. for 5 min to obtain a light-emitting layer 112 with a thickness of 25 nm;

[0091] An ethanol solution of ZnO nanoparticles was spin-coated on the light-emitting layer 112 and annealed at 80° C. for 10 min to obtain an electron transport layer 116 with a thickness of 50 nm;

[0092] Ag is evaporated on the electron transport layer 116 to obtain a cathode 113 with a thickness of 100 nm;

[0093] Packaging to obtain an optoelectronic device body 110;

[0094] Clean the back and side of the optoelectronic device body 110, evaporate Cu on the back of the optoelectronic device body 110 to form a plurality of first electrodes 121 with a thickness of 50 μm, wherein the plurality of first electrodes 121 are radially distributed around a point on the back of the optoelectronic device body 110, and one end of the plurality of first electrodes 121 are connected together;

[0095] A plurality of copper foil tapes with a thickness of 70 μm are attached to the side surface of the optoelectronic device body 110 as the second electrodes 122 , and the plurality of second electrodes 122 correspond to the plurality of first electrodes 121 one by one;

[0096] A clean glass substrate is cleaned and then a 150 μm thick PTFE film is attached thereto as a friction layer 1232 to obtain a friction portion 123;

[0097] The first electrode 121 and the second electrode 122 are connected to the anode 111 and the cathode 113 of the photoelectric device body 110 respectively, and a resistor is connected in series between the first electrode 121 and the anode 111 .

[0098] The method for driving the photoelectric device 100 to emit light includes the following steps: rotating the friction part 123 of the above-mentioned photoelectric device 100 at a rotation speed of 300 rpm so that the PTFE film and the first electrode 121 undergo rotational friction to generate friction charges, and the friction charges on the PTFE film are transferred to the second electrode 122 to drive the light-emitting layer 113 to emit light.

[0099] Example 2

[0100] The second embodiment is substantially the same as the first embodiment, except that in the second embodiment, the thickness of the first electrode 121 is 100 μm.

[0101] Example 3

[0102] The third embodiment is substantially the same as the first embodiment, except that in the third embodiment, the thickness of the first electrode 121 is 1000 μm.

[0103] Example 4

[0104] The fourth embodiment is substantially the same as the first embodiment, except that in the fourth embodiment, the rotation speed of the friction part 123 is 100 rpm.

[0105] Example 5

[0106] The fifth embodiment is substantially the same as the first embodiment, except that in the fifth embodiment, the rotation speed of the friction part 123 is 500 rpm.

[0107] Example 6

[0108] The present embodiment 6 is basically the same as the embodiment 1, except that in the present embodiment 6, the friction layer 1232 is a PVDF film.

[0109] Example 7

[0110] The present embodiment 7 is basically the same as the embodiment 1, except that in the present embodiment 7, the friction layer 1232 is a PA film.

[0111] Example 8

[0112] The present embodiment 8 is basically the same as the embodiment 1, except that in the present embodiment 8, the friction layer 1232 is a PET film.

[0113] The optoelectronic devices of Examples 1 to 8 were tested, and the test items were: current, brightness and external quantum efficiency. The test results are detailed in Table 1 below.

[0114] Among them, the test method for current, external quantum efficiency and brightness is: use FSD FPD optical property measurement equipment, control the efficiency test system built by QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabView, measure parameters such as voltage, current, brightness, and luminescence spectrum, and calculate the external quantum efficiency of the device.

[0115] Table 1

[0116] Current (mA) Brightness (nit) External quantum efficiency (%) Example 1 0.035 2500 15 Example 2 0.03 2000 12 Example 3 0.015 100 3 Example 4 0.018 300 5 Example 5 0.07 3500 18 Example 6 0.34 2400 14 Example 7 20 700 8 Example 8 0.12 50 1

[0117] It can be seen from Table 1 that the photoelectric devices of Examples 1 to 8 all generate current and have a certain brightness and external electron efficiency, which means that the photoelectric devices of Examples 1 to 8 can all achieve self-powered luminescence.

[0118] By comparing Example 1, Example 2 and Example 3, it can be seen that when the rotation speed of the friction part 123 is the same, the greater the thickness of the first electrode 121, the smaller the generated current, and the corresponding brightness and external electron efficiency are also lower.

[0119] By comparing Example 1, Example 4 and Example 5, it can be seen that when the thickness of the first electrode is the same, the greater the rotation speed of the friction part 123, the greater the current generated, and the corresponding brightness and external electron efficiency are also higher.

[0120] It can be seen from Example 1, Example 6, Example 7 and Example 8 that PTFE, PVDF, PA and PET are used as the friction layer materials of the optoelectronic devices of the present application. The optoelectronic devices of Example 1 and Examples 6 to 8 all generate current and have a certain brightness and external electron efficiency, indicating that friction layer materials such as PTFE, PVDF, PA and PET can achieve self-powered luminescence of optoelectronic devices.

[0121] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0122] In the description of this application, the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more features. The term "and / or" includes any and all combinations of one or more of the relevant listed items.

[0123] The optoelectronic device and the method for driving the optoelectronic device to emit light provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, characterized in that: It includes a photoelectric device body and a friction power generation component, the photoelectric device body includes a stacked anode, a light-emitting layer and a cathode, the friction power generation component includes a first electrode, a second electrode and a friction part; the first electrode and the second electrode are spaced apart, one of the first electrode and the second electrode is connected to the anode, and the other is connected to the cathode, the friction part is arranged opposite to the first electrode and a gap is provided between the friction part and the second electrode, and the friction part can generate friction charge by rotational friction with the first electrode.

2. The optoelectronic device according to claim 1, characterized in that: When the friction charge on the friction part is negative, the first electrode is a positive electrode and is connected to the anode; Alternatively, when the friction charge on the friction part is positive, the first electrode is a negative electrode and is connected to the cathode.

3. The optoelectronic device according to claim 1 or 2, characterized in that: A resistor is connected between the anode and the first electrode or the second electrode; And / or, one of the first electrode and the second electrode is arranged on the back side of the optoelectronic device body, and the other is arranged on the side side of the optoelectronic device body; and / or, a surface area of ​​the friction portion facing the first electrode is larger than a surface area of ​​the first electrode facing the friction portion; And / or, the number of the first electrode and the number of the second electrode are both multiple, the multiple first electrodes are radially distributed on the surface of the photoelectric device, one end of the multiple first electrodes are connected together, and the multiple second electrodes correspond to the multiple first electrodes one by one; And / or, the friction part includes a substrate and a friction layer, the friction layer is formed on a surface of the substrate facing the first electrode, and the friction layer can rub against the first electrode so that the friction layer carries a friction charge.

4. The optoelectronic device according to claim 3, characterized in that: The thickness of the first electrode is 50 μm to 1 mm; And / or, the thickness of the second electrode is 50 μm to 100 μm; And / or, the friction layer has a thickness of 50 μm to 200 μm; And / or, the distance between the first electrode and the second electrode is 1 mm to 3 mm; And / or, the distance between the second electrode and the friction layer is 50 μm to 1 mm.

5. The optoelectronic device according to claim 3, characterized in that: The material of the friction layer is a high molecular polymer material, the material of the first electrode is a first metal material, and the material of the second electrode is a second metal material; Optionally, the high molecular polymer material is selected from one of polytetrafluoroethylene, polyvinylidene fluoride, polyamide and polyethylene terephthalate; Optionally, the first metal material and the second metal material are independently selected from one of copper, silver, aluminum and platinum; Optionally, the anode and the cathode are independently selected from a metal electrode, a carbon electrode and a composite electrode formed by one or more of a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; Optionally, the material of the light-emitting layer is selected from at least one of single-structure quantum dots and core-shell structure quantum dots, the single-structure quantum dots are selected from at least one of II-VI group compounds, III-V group compounds and I-III-VI group compounds, the II-VI group compounds are selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe and CdZnSTe, the I The II-V group compound is selected from at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP, and the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the core of the core-shell structure quantum dot is selected from any one of the above-mentioned single structure quantum dots, and the shell material of the core-shell structure quantum dot is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS; Optionally, the optoelectronic device body further comprises a hole transport layer, the hole transport layer is arranged between the anode and the light-emitting layer, and the material of the hole transport layer is selected from poly(9,9-dioctylfluorene-co-N-(4-butylphenyl) diphenylamine), polyvinyl carbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl) benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1 ,4-phenylenediamine), 4,4',4"-tri(carbazole-9-yl)triphenylamine, 4,4'-di(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, doped graphene, undoped graphene and one or more of C60; Optionally, the optoelectronic device body further includes a hole injection layer, which is disposed between the anode and the light-emitting layer, and the material of the hole injection layer is selected from one or more of poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polyester copper carbonate, transition metal oxides and transition metal sulfur compounds; Optionally, the optoelectronic device body further includes an electron transport layer, which is disposed between the cathode and the light-emitting layer, and the material of the electron transport layer is selected from one or more of an inorganic electron transport material and an organic electron transport material, the inorganic electron transport material is selected from one or more of doped or undoped zinc oxide, barium oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, cadmium sulfide, zinc sulfide, zinc tin, indium phosphide, gallium phosphide and barium titanate, wherein the doped element includes one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium, and the organic electron transport material includes one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds and hydroxyquinoline compounds; Optionally, the optoelectronic device body also includes an electron injection layer, which is arranged between the cathode and the light-emitting layer, and the material of the electron injection layer is selected from one or more of LiF, MgP, MgF2, Al2O3, Ga2O3, ZnO, Cs2CO3, RbBr, Rb2CO3 and LiF / Yb.

6. A method for preparing a photoelectric device, characterized in that: The preparation method comprises the following steps: Providing a photoelectric device body, the photoelectric device body comprising an anode, a light-emitting layer and a cathode arranged in a stacked manner; Providing a first electrode and a second electrode, wherein one of the first electrode and the second electrode is disposed on the back side of the photoelectric device body, and the other is disposed on the side of the photoelectric device body, with a gap provided between the first electrode and the second electrode, and one of the first electrode and the second electrode is connected to the anode, and the other is connected to the cathode; A friction part is provided, and the friction part is arranged opposite to the first electrode with a gap between the friction part and the second electrode, and the friction part can generate friction charges by rotating friction with the first electrode.

7. The preparation method according to claim 6, characterized in that: The surface area of ​​the friction portion facing the first electrode is larger than the surface area of ​​the first electrode facing the friction portion; And / or, the step of arranging one of the first electrode and the second electrode on the back side of the optoelectronic device body and the other on the side of the optoelectronic device body comprises: arranging a plurality of the first electrodes on the back side of the optoelectronic device body and distributing them radially, connecting one end of the plurality of the first electrodes together, and arranging a plurality of the second electrodes on the side of the optoelectronic device body and corresponding to the plurality of the first electrodes one by one; And / or, connecting one of the first electrode and the second electrode to the anode and the other to the cathode comprises: connecting one of the first electrode and the second electrode to a resistor and then to the anode, and connecting the other to the cathode; And / or, the friction part includes a substrate and a friction layer formed on the surface of the substrate, and the friction part is arranged relative to the first electrode includes: a side of the substrate on which the friction layer is formed is arranged relative to the first electrode, and the friction layer can rub against the first electrode so that the friction layer carries a friction charge.

8. The preparation method according to claim 7, characterized in that: The thickness of the first electrode is 50 μm to 1 mm; And / or, the thickness of the second electrode is 50 μm to 100 μm; And / or, the friction layer has a thickness of 50 μm to 200 μm; And / or, the distance between the first electrode and the second electrode is 1 mm to 3 mm; and / or, the distance between the second electrode and the friction layer is 50 μm to 1 mm; And / or, the material of the friction layer is a high molecular polymer material, the material of the first electrode is a first metal material, and the material of the second electrode is a second metal material; Optionally, the high molecular polymer material is selected from one of polytetrafluoroethylene, polyvinylidene fluoride, polyamide and polyethylene terephthalate; Optionally, the first metal material and the second metal material are independently selected from one of copper, silver, aluminum and platinum; Optionally, the anode and the cathode are independently selected from a metal electrode, a carbon electrode and a composite electrode formed by one or more of a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; And / or, the material of the light-emitting layer is selected from at least one of single-structure quantum dots and core-shell structure quantum dots, the single-structure quantum dots are selected from at least one of II-VI group compounds, III-V group compounds and I-III-VI group compounds, the II-VI group compounds are selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe and CdZnSTe, the I The II-V group compound is selected from at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP, and the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the core of the core-shell structure quantum dot is selected from any one of the above-mentioned single structure quantum dots, and the shell material of the core-shell structure quantum dot is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS; And / or, the optoelectronic device body further comprises a hole transport layer, the hole transport layer is arranged between the anode and the light-emitting layer, and the material of the hole transport layer is selected from poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), polyethylene carbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4"-tri(carbazole-9-yl)triphenylamine, 4,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl -4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, doped graphene, undoped graphene and one or more of C60; And / or, the optoelectronic device body further comprises a hole injection layer, the hole injection layer is arranged between the anode and the light-emitting layer, and the material of the hole injection layer is selected from one or more of poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polyester copper carbonate, transition metal oxides and transition metal sulfur compounds; And / or, the optoelectronic device body further comprises an electron transport layer, the electron transport layer is arranged between the cathode and the light-emitting layer, the material of the electron transport layer is selected from one or more of inorganic electron transport materials and organic electron transport materials, the inorganic electron transport material is selected from one or more of doped or undoped zinc oxide, barium oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, cadmium sulfide, zinc sulfide, zinc tin, indium phosphide, gallium phosphide and barium titanate, wherein the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium, and the organic electron transport material includes one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds and hydroxyquinoline compounds; And / or, the optoelectronic device body also includes an electron injection layer, which is arranged between the cathode and the light-emitting layer, and the material of the electron injection layer is selected from one or more of LiF, MgP, MgF2, Al2O3, Ga2O3, ZnO, Cs2CO3, RbBr, Rb2CO3 and LiF / Yb.

9. A method for driving a photoelectric device to emit light, characterized in that: The following steps are involved: Providing a photoelectric device, wherein the photoelectric device is the photoelectric device according to any one of claims 1 to 5, or the photoelectric device is prepared by the preparation method according to any one of claims 6 to 8; The friction part of the photoelectric device is caused to rotate and rub against the first electrode to generate friction charges, and the friction charges on the friction part are transferred to the second electrode to drive the light-emitting layer to emit light.

10. The method according to claim 9, characterized in that The rotation speed of the friction part and the first electrode during rotational friction is 100 rpm to 500 rpm; And / or, the friction part includes a substrate and a friction layer formed on the surface of the substrate, and causing the friction part to rotate and rub against the first electrode to generate friction charges includes: causing the friction layer to rotate and rub against the first electrode to generate friction charges.

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