Plasma processing apparatus

Abstract

A plasma processing apparatus (1) is provided with: a housing (2) provided with a first opening (2b); a vacuum cover (4) that is detachably attached to the first opening (2b) and blocks the first opening (2b); a dielectric radome (5) supported inside the first opening (2b); and an antenna (8), which is disposed in an antenna housing space (AK) surrounded by at least the vacuum cover (4) and the antenna cover (5), and which generates inductively coupled plasma. The antenna cover (5) is provided with a cover opening part (5c) which is opened at the side of the vacuum cover (4) and forms a part of the antenna accommodating space (AK), and the antenna cover (5) can be detached from the first opening part (2b).

Description

Technical Field

[0001] The invention relates to a plasma processing device. Background Art

[0002] There is known a plasma processing apparatus that generates inductively coupled plasma in a vacuum container using an antenna disposed in the vacuum container. Depending on the type of the plasma processing apparatus, the plasma processing apparatus performs a predetermined plasma processing on a substrate to be processed using the generated plasma.

[0003] For example, the plasma processing apparatus described in Patent Document 1 includes an antenna placement unit that places a high-frequency antenna inside a cavity provided in an upper wall of a vacuum container, and a partition plate provided to cover the entire inner surface side of the upper wall.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. 2012 / 033191 Summary of the invention

[0007] Problems to be solved by the invention

[0008] However, in the previous plasma processing device described in Patent Document 1, the partition is fixed to the vacuum container. Therefore, when performing maintenance work on the plasma processing device, for example, it is sometimes required to remove the screws fixing the partition from the inner side of the vacuum container and remove the partition from the vacuum container. In this case, it is necessary to perform a work close to disassembly of the plasma processing device. Therefore, in the previous plasma processing device, there is a problem that the maintenance work requires effort and time.

[0009] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a plasma processing apparatus that can improve maintainability even when an inner cover is provided.

[0010] Technical means of solving problems

[0011] In order to solve the above-mentioned problem, a plasma processing device according to one aspect of the present invention is a plasma processing device including a processing chamber, the plasma processing device including: a shell having a first opening portion connecting the processing chamber with an external environment; an outer cover installed on the first opening portion in a detachable manner and closing the first opening portion; an inner cover supported inside the first opening portion and having dielectric properties; and an antenna arranged in an enclosed space formed by at least the outer cover and the inner cover, for generating inductively coupled plasma, the inner cover having a second opening portion opened on the outer cover side and constituting a part of the enclosed space, and the inner cover being removable from the first opening portion.

[0012] Effects of the Invention

[0013] According to one aspect of the present invention, it is possible to provide a plasma processing apparatus that can improve maintainability even when an inner cover is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] [ Figure 1 ] is a diagram illustrating the structure of the plasma processing device according to embodiment 1 of the present invention.

[0015] [ Figure 2 ]yes Figure 1 Sectional view along line II-II.

[0016] [ Figure 3 ] is a diagram illustrating an example of test results in the plasma processing device.

[0017] [ Figure 4 ] is a diagram illustrating the structure of a plasma processing device according to a second embodiment of the present invention.

[0018] [ Figure 5 ] is a diagram illustrating the structure of a plasma processing device according to a third embodiment of the present invention.

[0019] [ Figure 6 ]yes Figure 5 VV line profile.

[0020] [ Figure 7 ] is a diagram illustrating the structure of a plasma processing device according to a fourth embodiment of the present invention.

[0021] [ Figure 8 ]yes Figure 7 VII-VII line cross-sectional view.

[0022] [ Fig. 9 ] is a diagram illustrating the structure of a plasma processing device according to a fifth embodiment of the present invention.

[0023] [ Fig.10 ] is to indicate Fig. 9 Flow chart of an operation example of the plasma processing apparatus shown.

[0024] [ Fig.11 ] is to indicate Fig. 9 FIG. 1 is a flow chart of another operation example of the plasma processing apparatus shown in FIG.

[0025] [ Fig.12 ] is to indicate Fig. 9 FIG. 1 is a flow chart of another operation example of the plasma processing apparatus shown in FIG.

[0026] [ Fig.13 ] is a diagram illustrating the specific wiring of the antenna in the plasma processing device of variant example 1.

[0027] [ Fig.14 ] is a diagram illustrating the specific wiring of the antenna in the plasma processing device of variant example 2.

[0028] [ Fig.15 ] is a diagram illustrating the specific wiring of the antenna in the plasma processing device of variant example 3.

[0029] [ Fig.16 ] is a diagram illustrating the structure of a plasma processing device according to a sixth embodiment of the present invention.

[0030] [ Fig.17 ]yes Fig.16 Sectional view along line XVII-XVII.

[0031] [ Fig.18 ] is a diagram illustrating the structure of a plasma processing device according to a seventh embodiment of the present invention.

[0032] [ Fig.19 ]yes Fig.18 IXX-IXX line profile. DETAILED DESCRIPTION

[0033] [Implementation method 1]

[0034] Below, use Figure 1 and Figure 2 Embodiment 1 of the present invention will be described in detail. Figure 1 This is a diagram for explaining the structure of a plasma processing apparatus 1 according to Embodiment 1 of the present invention. Figure 2 yes Figure 1 Sectional view along line II-II.

[0035] Furthermore, in the following description, a plasma processing device 1 is used as an example for explanation. The plasma processing device 1 performs a film forming process as a predetermined plasma process. The film forming process forms a predetermined film on the surface of a processed substrate H1 as a processed object by a plasma CVD (Chemical Vapor Deposition) method using an inductively coupled plasma.

[0036] However, the present invention can be applied to a plasma processing device 1 that performs a film forming process of forming a predetermined film on a substrate H1 to be processed by a sputtering method as a predetermined plasma processing. In addition, the present invention can be applied to a plasma processing device 1 that performs a surface processing process of performing a predetermined process on the surface of the substrate H1 to be processed by using plasma, such as an etching process or an ashing process as a predetermined plasma processing. Furthermore, in a plasma processing device 1 that performs a sputtering method, a target material is, for example, disposed inside a plasma generation region HA described later.

[0037] <Structure of plasma processing apparatus 1>

[0038] like Figure 1 As shown in FIG. 1 , the plasma processing apparatus 1 of the first embodiment includes a housing 2, a flange 3, a vacuum cover 4, an antenna cover 5, and a stage 6. In addition, the plasma processing apparatus 1 includes an antenna 8 and a control unit 15. In addition, in the plasma processing apparatus 1, as shown in FIG. Figure 2 As shown, a plurality of antennas 8, for example, four antennas 8 are provided, and a vacuum cover 4 and an antenna cover 5 are provided for each antenna 8. Furthermore, in the plasma processing apparatus 1, the substrate H1 to be processed is transferred between the stage 6 and a known load lock chamber by a transfer mechanism (not shown).

[0039] The substrate H1 to be processed may be, for example, a glass substrate or a synthetic resin substrate used in a liquid crystal panel display or an organic electroluminescence (EL) panel display. In addition, the substrate H1 to be processed may be a semiconductor substrate for various purposes. The plasma processing device 1 forms a predetermined film such as a barrier (moisture-proof) film on the substrate H1 to be processed by the predetermined plasma processing.

[0040] <Case 2>

[0041] The housing 2 includes a housing body 2a, the housing body 2a is used to form a processing chamber for performing the prescribed plasma processing on the substrate H1 to be processed, and a first opening 2b for connecting the processing chamber with the external environment is provided on the upper part of the housing body 2a. In the plasma processing device 1 of the present embodiment, the housing 2 has a box-shaped housing body 2a with an opening on the upper side, and a flange 3 having a plurality of openings is airtightly mounted on the upper surface side of the housing 2 (housing body 2a). In the plasma processing device 1, when the flange 3 is mounted on the housing body 2a, the opening of the flange 3 is included in the first opening 2b for connecting the inside of the processing chamber with the outside. In other words, when the flange 3 and the vacuum cover 4 are mounted on the upper end surface of the housing 2, the vacuum cover 4 mounted on the housing 2 in a detachable manner closes the first opening 2b together with the flange 3.

[0042] <Flange 3>

[0043] like Figure 2 As shown, the flange 3 includes, for example, a rectangular frame having two first sides 3a facing each other, and two second sides 3b (3b) that are orthogonal to the first sides 3a and facing each other. Figure 1 ). In addition, the flange 3 includes, for example, a third side portion 3c, a fourth side portion 3d, and a fifth side portion 3e provided on the inner side of the frame body from one of the second side portions 3b to the other second side portion 3b. That is, both ends of the third side portions 3c, the fourth side portion 3d, and the fifth side portion 3e are formed continuously with the second side portion 3b. The third side portion 3c, the fourth side portion 3d, and the fifth side portion 3e may also be formed between the two first side portions 3a to be parallel to the first side portion 3a.

[0044] In addition, the first side 3a, the second side 3b, the third side 3c, the fourth side 3d, and the fifth side 3e may each have a protrusion protruding toward the first opening 2b (details will be described later). Furthermore, in the following description, the first side 3a, the second side 3b, the third side 3c, the fourth side 3d, and the fifth side 3e are collectively referred to as the side 3h.

[0045] <Vacuum cover 4>

[0046] In addition, in the plasma processing device 1, the vacuum cover 4 that blocks the first opening 2b is configured to be detachably mounted on the first opening 2b. That is, the vacuum cover 4 is airtightly mounted on the housing body 2a via the flange 3 in a manner that blocks the first opening 2b, and is reversibly mounted so as to be removable from the flange 3 and the housing body 2a. Here, the flange 3 may also have a protrusion that is formed to gradually reduce the opening area of ​​the first opening 2b in a direction from the external environment toward the processing chamber. For example, the first side 3a, the third side 3c, the fourth side 3d, and the fifth side 3e may each have a first support portion that protrudes in the interior of the first opening 2b in a manner that locks the peripheral portion of the vacuum cover 4. The first support portion may also be a part of the protrusion. The vacuum cover 4 is an example of an outer cover, and is supported by the upper surface of the second side 3b and the upper surface of the first support portion of the first side 3a, the third side 3c, the fourth side 3d, and the fifth side 3e. The vacuum cover 4 is made of metal, for example.

[0047] <Radome 5>

[0048] In addition, in the plasma processing apparatus 1, the antenna cover 5 is supported inside the first opening 2b in a manner that is detachable relative to the flange 3. Specifically, Figure 1 and Figure 2 As shown, the antenna cover 5 includes, for example, an antenna housing portion 5a having a U-shaped cross section. In addition, the antenna cover 5 includes a cover support portion 5b and a cover opening portion 5c. The cover support portion 5b is a flange portion formed continuously from the two ends of the antenna housing portion 5a having a U-shaped cross section, and is formed in a manner of extending outward from the ends of the antenna housing portion 5a. That is, the cover support portion 5b has an outward flange shape. Furthermore, the antenna cover 5 is supported inside the first opening portion 2b, which also includes the following situations: for example, Figure 2 As shown, a part of the antenna housing portion 5a of the antenna cover 5 is supported in a state of protruding from the lower side (inside the housing 2) of the opening of the flange 3 included in the first opening 2b.

[0049] Here, for example, the side portion 3h of the flange 3 may have a second support portion protruding inside the first opening 2b so as to lock the peripheral portion of the antenna cover 5. The second support portion is a part of the protruding portion, and protrudes further toward the inside of the first opening 2b than the first support portion (the protruding length is larger). When the antenna cover 5 is supported inside the first opening 2b, the cover support portion 5b is supported by (the second support portion of) the side portion 3h of the flange 3. In addition, the antenna cover 5 has a cover opening 5c ​​formed by being surrounded by the antenna accommodating portion 5a.

[0050] In addition, the antenna cover 5 is made of a dielectric material such as alumina, and constitutes an inner cover having dielectric properties. In addition, in the antenna cover 5, the antenna housing portion 5a is formed in a manner corresponding to the shape of the antenna 8. The antenna housing portion 5a is configured to have a shape that covers a portion of the outer peripheral surface of the antenna 8 when the antenna 8 is installed. In addition, in the antenna cover 5, the cover support portion 5b is supported on the edge portion 3h of the flange 3 in a detachable manner. Furthermore, in the antenna cover 5, the cover opening portion 5c is provided in a manner that opens on the vacuum cover 4 side. The cover opening portion 5c is an example of a second opening portion that constitutes a portion of the antenna housing space AK described later.

[0051] In addition, an antenna accommodation space AK surrounded by at least the vacuum cover 4 and the antenna cover 5 is formed in the housing 2. In the plasma processing device 1 of the present embodiment, the antenna accommodation space AK is also surrounded by the inner wall surface of the flange 3. The antenna accommodation space AK is an example of an enclosed space, and the antenna 8 for generating inductively coupled plasma is accommodated. However, in the antenna accommodation space AK, the size of the space is set to a size that cannot maintain the plasma generated by the antenna 8, and thus functions as a plasma non-generation area.

[0052] In addition, in the plasma processing apparatus 1 of the first embodiment, Figure 2 As shown, the radome 5 is supported on the inner side of the housing 2 by the flange 3 provided on the upper end surface of the housing body 2a. Therefore, in the present embodiment 1, the plasma processing device can be compactly configured compared with the case where the radome is mounted on the housing in a state where the antenna support portion of the radome is in contact with the upper surface of the housing. In other words, in the plasma processing device 1 of the present embodiment 1, the radome 5 can be detachably mounted on the housing 2 without the upper portion of the radome 5 (antenna support portion 5b) protruding from the upper surface of the housing 2. Therefore, in the plasma processing device 1 of the present embodiment 1, the housing 2 can be prevented from being enlarged.

[0053] <Antenna 8>

[0054] The antenna 8 is cylindrical, for example, and is made of a metal material such as copper. One end and the other end of the antenna 8 are electrically insulated from the vacuum cover 4 via the antenna insulating portion 13A and the antenna insulating portion 13B, respectively, and are pulled out of the housing 2 in an airtight manner.

[0055] In addition, the antenna 8 is provided with a cooler 12, and the antenna 8 is cooled to a predetermined temperature by a cooling medium, such as cooling water, that circulates through the cooler 12. Specifically, the cooler 12 includes: a cooler body 12a, which includes a driving unit such as a pump (not shown) for circulating cooling water; and a pipe 12b, which is airtightly connected to the cooler body 12a. In addition, the pipe 12b is also arranged in the internal space of the antenna 8, and is configured to use the internal space of the antenna 8 as a circulation path for cooling water. That is, in the antenna 8, as shown in FIG. Figure 1 As indicated by arrows R1 and R2 , the antenna 8 is cooled by causing cooling water to flow through the internal space of the antenna 8 .

[0056] In addition, an impedance adjusting unit 10 and an impedance adjusting unit 11 are electrically connected to one end and the other end of the antenna 8, respectively. The impedance adjusting unit 10 includes a matching circuit (not shown), and one end of the antenna 8 is connected to the power supply 9 via the matching circuit. In addition, the impedance adjusting unit 11 includes a variable capacitor, and the other end of the antenna 8 is electrically grounded via the variable capacitor.

[0057] In addition, if Figure 1 As shown in the figure, the antenna 8 is configured such that the main part for generating plasma, except for the part pulled out to the outside of the housing 2, is formed in a straight line. In this way, the main part for generating plasma of the antenna 8 is formed in a straight line, so the antenna can be manufactured easily and at a low cost compared to the case where the main part for generating plasma includes a curved shape such as a spiral or a U shape. In addition, in the first embodiment, by adjusting the inclination of the antenna 8 in the long side direction, the generation distribution of the plasma generated by the antenna 8 can be easily adjusted.

[0058] In addition, if Figure 2 As shown, the antenna cover 5 includes an antenna housing portion 5a having a U-shaped cross section, and the antenna housing portion 5a is formed corresponding to and houses the linear main portion of the antenna 8. Therefore, in the present embodiment 1, even when a plurality of antennas 8 are provided, it is easy to provide space for the plurality of antennas 8, thereby miniaturizing the housing 2 and the plasma processing apparatus 1.

[0059] The power supply 9 supplies, for example, 13.56 MHz high frequency power to one end of the antenna 8 via the impedance adjuster 10. In the plasma processing apparatus 1, the control unit 15 controls the antenna 8 to efficiently supply high frequency power by changing the capacitance of the variable capacitor of the impedance adjuster 11.

[0060] In addition, in the first embodiment, the power source 9, the impedance adjustment unit 10, and the impedance adjustment unit 11 are provided for each antenna 8, and the control unit 15 can perform generation control of plasma generated in each antenna 8 by controlling the power source 9 for each antenna 8. Thus, in the first embodiment, the control unit 15 can make the antenna 8 operate more appropriately and can reliably suppress the generation of plasma in the antenna accommodation space AK. As a result, in the first embodiment, the generation of damage to the antenna 8 can be more reliably suppressed.

[0061] In addition, in the housing 2, by installing the antenna cover 5 inside the first opening 2b, the internal space of the housing 2 is delimited and a plasma generation area HA is formed inside the housing body 2a. A carrier 6 and a substrate H1 to be processed supported by the carrier 6 are arranged inside the plasma generation area HA, and the plasma generation area HA substantially constitutes the processing chamber. In other words, in the housing 2, the plasma generation area HA is separated from the plasma non-generation area by the antenna cover 5.

[0062] Furthermore, in the housing 2, the flange 3 and the vacuum cover 4 are respectively airtightly mounted to the housing body 2a and the flange 3, thereby forming a vacuum container including the processing chamber. Figure 1 As shown, in the housing 2, a vacuum pump PO is connected to the housing body 2a, and the control unit 15 controls the vacuum pump PO, whereby the interior of the plasma generation area HA is brought into a predetermined vacuum degree at least during plasma processing.

[0063] Specifically, in the shell 2, the vacuum pump PO is used to exhaust gas, so that the pressure in the plasma generation area HA is reduced, and the pressure in the antenna accommodation space AK is also reduced. The reason is that the portion where the antenna cover 5 and the shell 2 are connected to each other is not vacuum-sealed, and the plasma generation area HA and the antenna accommodation space AK are connected to each other via a gap. The antenna accommodation space AK is narrower than the plasma generation area HA and becomes an area where it is difficult to generate and maintain plasma (plasma non-generation area). When the antenna 8 is energized to generate plasma in the plasma generation area HA, the gas pressure in the antenna accommodation space AK can be the same as that in the plasma generation area HA, for example, 1Pa to 100Pa. Furthermore, if Figure 1 As shown, the housing 2 and the carrier 6 are electrically grounded respectively.

[0064] In addition, the housing 2 is provided with a first pressure gauge P1 (described later) for detecting the pressure (vacuum degree) inside the plasma generation area HA. Fig. 9 ), the control unit 15 uses the detection result of the first pressure gauge P1 to control the vacuum degree inside the plasma generation area HA.

[0065] In addition, a temperature sensor (not shown) for detecting the temperature of the stage 6 is provided in the housing 2, and the detection result of the temperature sensor is output to the control unit 15. Then, the control unit 15 controls the stage 6 to a predetermined set temperature during the plasma processing by performing feedback control using the input detection result of the temperature sensor.

[0066] In addition, the housing 2 includes a processing gas supply unit corresponding to the predetermined plasma processing (see the following description). Fig. 9 ), and the plasma treatment is performed in an atmosphere of a processing gas, wherein the processing gas supply unit introduces a processing gas including a film-forming gas for the film into the interior of a plasma generation area HA (processing chamber) of the housing 2. The processing gas is, for example, argon, hydrogen, nitrogen, silane, or oxygen.

[0067] <Control unit 15>

[0068] The control unit 15 is a functional block that includes, for example, a central processing unit (CPU), a random access memory (RAM), a read only memory (ROM), etc., and performs control of various parts of the plasma processing apparatus 1 according to information processing. Specifically, the control unit 15 performs a predetermined control process on the plasma processing of the substrate H1 to be processed in the plasma generation area HA.

[0069] The plasma processing device 1 of the present embodiment 1 constructed as described above includes: a housing 2 provided with a first opening 2b; and a vacuum cover 4 detachably mounted on the first opening 2b and closing the first opening 2b. In addition, the plasma processing device 1 includes: an antenna cover 5 supported inside the first opening 2b and having dielectric properties; and an antenna 8 disposed in an antenna accommodation space AK formed by at least the vacuum cover 4 and the antenna cover 5, for generating an inductively coupled plasma. Furthermore, in the plasma processing device 1, the antenna cover 5 is formed with a cover opening 5c ​​that opens on the vacuum cover 4 side and constitutes a part of the antenna accommodation space AK, and the antenna cover 5 can be removed from the first opening 2b.

[0070] With the above structure, in the first embodiment, a plasma processing device 1 can be configured that can improve maintainability even when the antenna cover 5 is provided. Specifically, in the first embodiment, the vacuum cover 4 and the antenna cover 5 can be freely taken out from the first opening 2b side relative to the housing 2. As a result, in the first embodiment, when performing maintenance work on the plasma processing device 1, the vacuum cover 4 and the antenna cover 5 can be easily removed from the housing 2, thereby greatly reducing the possibility that the maintenance work requires effort and time.

[0071] In addition, in the first embodiment, the antenna cover 5 includes: an antenna housing portion 5a formed in a manner consistent with the shape of the antenna 8; and a cover opening 5c ​​constituting a part of the antenna housing space AK. Therefore, in the first embodiment, the antenna 8 can be easily arranged close to the substrate H1 to be processed on the stage 6. As a result, in the first embodiment, the plasma processing of the substrate H1 to be processed can be performed efficiently.

[0072] In addition, in this embodiment 1, if Figure 2 As shown in FIG. 1 , the antenna 8 is disposed inside the housing 2 in such a manner that it protrudes toward the substrate H1 through the antenna housing portion 5a of the antenna cover 5. Therefore, in the first embodiment, when the circumferential direction of the antenna 8 is considered, the plasma generation area from the antenna 8 can be made larger than 180 degrees. Figure 2 In this embodiment, plasma used in the plasma treatment can be applied to the substrate H1 from a portion above the diameter of the antenna 8. As a result, in the first embodiment, plasma used in the plasma treatment can be efficiently generated.

[0073] In addition, in this embodiment 1, if Figure 1 As shown, one end and the other end of the long side direction of the antenna 8 are arranged inside the housing 2 in a state of being held by the antenna housing portion 5a of the antenna cover 5. Therefore, in the first embodiment, the plasma used in the plasma treatment can be applied to the substrate H1 to be processed from one end and the other end of the long side direction of the antenna 8. As a result, in the first embodiment, the decrease in the density of the plasma from one end and the other end can be suppressed, so that the uniformity of the plasma density in the long side direction of the antenna 8 can be improved.

[0074] In addition, in the plasma processing apparatus 1 of the present embodiment 1, the flange 3 for detachably supporting the antenna cover 5 is provided on the first opening portion 2b side of the housing 2. Therefore, in the present embodiment 1, the antenna cover 5 can be easily provided on the housing 2. Furthermore, in the present embodiment 1, the vacuum cover 4, the antenna cover 5, the antenna 8, etc. can be easily removed from the housing 2, so that the plasma processing apparatus 1 with excellent maintainability can be easily configured.

[0075] In addition, in the plasma processing apparatus 1 of the first embodiment, the plasma generating area HA and the plasma non-generating area (antenna housing space AK) are separated from each other by the antenna cover 5. Therefore, in the first embodiment, even if the antenna 8 is damaged due to the generation of abnormal discharge or the generation of plasma, and contaminants such as particles are generated in the antenna housing space AK, the antenna cover 5 can greatly suppress the intrusion of the contaminants into the plasma generating area HA side, thereby minimizing the possibility of degradation of the quality of the substrate H1 to be processed due to the contaminants.

[0076] In the first embodiment, since the vacuum cover 4 and the antenna cover 5 are provided for each antenna 8, installation work, replacement work, and maintenance work can be performed for each antenna 8. As a result, in the first embodiment, a plasma processing apparatus 1 with excellent operability and easy handling can be simply configured.

[0077] In addition, in the present embodiment 1, unlike the above-mentioned previous example using screw fastening, the antenna cover 5 can be installed inside the housing 2 without being screwed or the like. As a result, in the present embodiment 1, even when the inside of the plasma generation area HA (processing chamber) is placed in a vacuum environment with a predetermined vacuum degree, unlike the above-mentioned previous example, the possibility of cracking or deformation in the antenna cover 5 starting from the screwed portion can be greatly reduced.

[0078] (Test results of verification test)

[0079] Here, use Figure 3 An example of test results in the plasma processing apparatus 1 according to the first embodiment will be described in detail. Figure 3 This is a diagram for explaining an example of test results in the plasma processing apparatus 1 .

[0080] In the verification test, the plasma processing apparatus 1 of the present embodiment 1 was used to perform a film forming process of forming a SiO2 film on a silicon substrate as a substrate to be processed H1 according to the following test conditions. That is, as test conditions, the temperature of the carrier 6 was set to 290°C, and the flow rates of silane (SiH4) and oxygen were set to 300sccm and 400sccm, respectively. In addition, the pressure in the processing chamber was set to 2.7Pa, and the power of the 13.56MHz power supply 9 (high-frequency power supply) was set to 1.1kW (number of antennas: four). The spacing in the arrangement direction (hereinafter referred to as the "antenna arrangement direction") of the four antennas 8 was 100mm. The deviation of the antenna current values ​​measured at the two ends of each of the four antennas 8 was ±4.4%.

[0081] The film formation speed and refractive index distribution of the SiO2 film formed by the plasma processing device 1 in the antenna arrangement direction were measured. Specifically, the SiO2 film located below the space between two adjacent antennas 8 among the four antennas 8 was measured. The film formation speed and refractive index of the SiO2 film were calculated for a total of five locations, namely, the central position between the two antennas 8 and four locations at intervals of 20 mm from the central position in the antenna arrangement direction, and the calculated results are shown in FIG. Figure 3 In. Figure 3 In the graph, the position of 0 mm on the horizontal axis is the center position between the two antennas 8 .

[0082] like Figure 3 As shown by the solid line and the dotted line, the film formation speed and refractive index of the SiO2 film are highly uniform. In addition, the refractive index of the light of wavelength 632.8nm of the formed SiO2 film is about 1.456, so it can be confirmed that a good SiO2 film close to the thermal oxide silicon film can be obtained. Furthermore, the evaluation of the SiO2 film was performed by forming the film on a φ4-inch (100mm diameter) silicon substrate using spectroscopic ellipsometry.

[0083] [Implementation method 2]

[0084] use Figure 4 Embodiment 2 of the present invention will be described in detail. Figure 4 This is a diagram for explaining the structure of a plasma processing apparatus 1 according to Embodiment 2 of the present invention. For convenience of explanation, components having the same functions as those described in Embodiment 1 are denoted by the same reference numerals, and their explanation will not be repeated.

[0085] The main difference between the second embodiment and the first embodiment is that a suppression dielectric 14 for suppressing the generation of plasma is provided in the antenna accommodation space AK.

[0086] like Figure 4 As shown, in the plasma processing apparatus 1 of the second embodiment, the suppression dielectric body 14 is provided on the surface of the first opening 2b side of the vacuum cover 4. The suppression dielectric body 14 is formed using a dielectric material such as alumina, and is configured to reduce the size of the antenna accommodation space AK. Thus, in the plasma processing apparatus 1 of the second embodiment, the generation of plasma inside the antenna accommodation space AK can be suppressed as much as possible.

[0087] In the plasma processing apparatus 1 of the second embodiment, the vacuum cover protection dielectric body 16A and the vacuum cover protection dielectric body 16B are provided between the surface of the vacuum cover 4 on the first opening portion 2b side and the cover support portion 5b of the antenna cover 5. The vacuum cover protection dielectric body 16A and the vacuum cover protection dielectric body 16B are formed using a dielectric material such as alumina, for example, and when the antenna 8 generates plasma, the vacuum cover 4 is prevented from being damaged by the plasma. Similarly, the suppression dielectric body 14 prevents damage to the vacuum cover 4 caused by the plasma from the antenna 8.

[0088] With the above configuration, the plasma processing apparatus 1 of the second embodiment achieves the same effects as those of the first embodiment.

[0089] In addition, in the plasma processing device 1 of the present embodiment 2, since the inner side surface of the shell 2 of the metal vacuum cover 4 is covered by the suppression dielectric 14 and the vacuum cover protection dielectric 16A and the vacuum cover protection dielectric 16B, the plasma generation in the antenna accommodating space AK can be suppressed, thereby suppressing the occurrence of damage to the antenna 8 and the vacuum cover 4.

[0090] [Implementation method 3]

[0091] use Figure 5 and Figure 6 Embodiment 3 of the present invention will be described in detail. Figure 5 It is a figure explaining the structure of the plasma processing apparatus 1 which concerns on Embodiment 3 of this invention. Figure 6 yes Figure 5 . For the sake of convenience, the same reference numerals are given to components having the same functions as those described in the first embodiment, and their descriptions are not repeated. Figure 5 In the figure, the power supply 9, the impedance adjustment unit 10, the impedance adjustment unit 11, the cooler 12, and the control unit 15 are omitted.

[0092] The main difference between the third embodiment and the first embodiment is that a support stand 16 is provided to support the vacuum cover 4 in a detachable manner with respect to the housing 2 .

[0093] like Figure 5 and Figure 6 As shown, in the plasma processing apparatus 1 of the third embodiment, the support platform 16 is provided between the vacuum cover 4 and the flange 3. The support platform 16 supports the vacuum cover 4 detachably with respect to the housing 2. The antenna cover 5 is supported by the flange 3 via the support platform 16.

[0094] With the above configuration, the plasma processing apparatus 1 of the third embodiment achieves the same effects as those of the first embodiment.

[0095] In the plasma processing apparatus 1 of the third embodiment, the antenna 8 and the vacuum cover 4 can be removed integrally from the housing 2 and the antenna cover 5. As a result, in the third embodiment, the maintainability of the plasma processing apparatus 1 can be further improved.

[0096] In addition, in the third embodiment, the support height of the antenna cover 5 can be partially adjusted with respect to the support table 16, and the antenna 8 can be mounted on the vacuum cover 4 in accordance with the adjusted support table 16. Therefore, in the third embodiment, the height of the antenna 8 relative to the antenna cover 5 and the substrate H1 to be processed and the inclination in the long side direction can be easily adjusted. As a result, in the third embodiment, a plasma processing apparatus 1 capable of performing high-precision plasma processing can be easily configured.

[0097] [Implementation method 4]

[0098] use Figure 7 and Figure 8 Embodiment 4 of the present invention will be described in detail. Figure 7 This is a diagram for explaining the structure of a plasma processing apparatus 1 according to a fourth embodiment of the present invention. Figure 8 yes Figure 7 VII-VII line cross-sectional view. In addition, for the sake of convenience, the same symbols are attached to the components having the same functions as the components described in the first embodiment, and their descriptions are not repeated. Figure 7 In the figure, the vacuum pump PO is omitted.

[0099] The main difference between the fourth embodiment and the first embodiment is that the antenna housing space AK is configured to be maintained at a predetermined vacuum degree.

[0100] like Figure 7 and Figure 8 As shown, in the plasma processing apparatus 1 of the fourth embodiment, the vacuum cover 4 includes a cover body 4a and a connecting hole 4b provided in the cover body 4a. The pipes H01 ( Figure 8 )、Valve V0( Figure 8 ), piping H02( Figure 8 ), and a second vacuum pump 17B (described later) connected to the pipe H02 Fig. 9 ).

[0101] In the plasma processing apparatus 1 of the fourth embodiment, the vacuum cover 4 and the antenna cover 5 are airtightly mounted to the housing 2, and the antenna 8 is airtightly mounted to the vacuum cover 4. The airtight mounting mentioned here means mounting each other in a state where the pressure state is maintained at a predetermined vacuum degree.

[0102] Furthermore, in the plasma processing apparatus 1 of the fourth embodiment, the second vacuum pump 17B is controlled by the control unit 15, such as Figure 8 As shown by the arrow S2 in the middle, the four antenna housing spaces AK are exhausted through the pipe H01, the valve V0, and the pipe H02. In addition, in the plasma processing apparatus 1 of the fourth embodiment, the vacuum pump PO is controlled by the control unit 15, as shown in FIG. Figure 7 As indicated by the middle arrow S1, exhaust is performed from the inside of the plasma generation area HA (processing chamber).

[0103] With the above configuration, the plasma processing apparatus 1 of the fourth embodiment achieves the same effects as those of the first embodiment.

[0104] In addition, the plasma processing apparatus 1 of the fourth embodiment includes the second vacuum pump 17B connected to the antenna housing space AK, so the antenna housing space AK can be easily set to a predetermined vacuum level. As a result, the fourth embodiment can reliably suppress the generation of plasma in the antenna housing space AK.

[0105] In the plasma processing apparatus 1 of the fourth embodiment, the vacuum cover 4 and the antenna cover 5 are airtightly attached to the housing 2, and the antenna 8 is airtightly attached to the vacuum cover 4. Thus, in the fourth embodiment, a predetermined vacuum degree in the antenna housing space AK can be easily maintained.

[0106] Furthermore, in the plasma processing apparatus 1 of the fourth embodiment, even when the antenna cover 5 is made thinner in order to improve the power efficiency of plasma generated by the antenna 8, the occurrence of damage to the antenna cover 5 can be suppressed. That is, the reason is that in the fourth embodiment, unlike the first embodiment, the inside of the antenna accommodation space AK is depressurized to a predetermined vacuum degree, so the pressure difference acting on the antenna cover 5, that is, the pressure difference between the plasma generation area HA (processing chamber) and the antenna accommodation space AK (plasma non-generation area) can be reduced.

[0107] [Implementation method 5]

[0108] use Fig. 9 Embodiment 5 of the present invention will be described in detail. Fig. 9 1 is a diagram for explaining the structure of a plasma processing apparatus 1 according to a fifth embodiment of the present invention. For the sake of convenience, components having the same functions as those described in the first embodiment are denoted by the same reference numerals, and their descriptions are not repeated. Fig. 9 In FIG. 1 , the power supply 9, the impedance adjustment unit 10, the impedance adjustment unit 11, the cooler 12, and the control unit 15 are omitted. Fig. 9 In FIG. 1 , arrows are used to indicate the moving direction of the process gas.

[0109] The main difference between the fifth embodiment and the first embodiment is that a second pressure gauge P2 is provided as a pressure gauge for detecting the pressure of the antenna accommodation space AK.

[0110] like Fig. 9 As shown, in the plasma processing apparatus 1 of the fifth embodiment, the connection hole 2c is provided in the housing body 2a. The pipe H13, the valve V13, the pipe H1B, the pipe H11, the valve V11, and the pipe H10 are installed in the connection hole 2c in order to be airtight. These connection holes 2c, the pipe H13, the valve V13, the pipe H1B, the pipe H11, the valve V11, and the pipe H10 constitute a processing gas supply unit for introducing processing gas into the interior of the plasma generation area HA (processing chamber). Furthermore, the processing gas supply unit includes a processing gas supply source airtightly installed in the pipe H10. Moreover, as described above, the processing gas supply unit introduces a predetermined processing gas from the processing gas supply source into the interior of the plasma generation area HA, and sets the interior of the plasma generation area HA to be in the atmosphere of the processing gas.

[0111] In the plasma processing apparatus 1 of the fifth embodiment, the pipe H11A, the valve V12, and the pipe H12 are sequentially installed in an airtight manner to the pipe H11. In addition, the pipe H12 is airtightly installed to the connecting hole 4c provided in the cover body 4a of the vacuum cover 4, and is configured to introduce the processing gas into the antenna housing space AK through the processing gas supply part.

[0112] In addition, in the plasma processing apparatus 1 of the fifth embodiment, the pipe H01, the pipe H1A, the valve V2, the pipe H2, and the second vacuum pump 17B are sequentially installed in an airtight manner at the connection hole 4b of the cover body 4a provided in the vacuum cover 4. In addition, the pipe H1B, the valve V1, and the pipe H3 are sequentially installed in an airtight manner at the pipe H01. The pipe H3 is airtightly installed at the connection point of the pipe H4 and the pipe H5 described later. In addition, the second vacuum pump 17B is an example of a vacuum pump.

[0113] In addition, in the plasma processing apparatus 1 of the fifth embodiment, the second pressure gauge P2 is airtightly mounted on the cover body 4a of the vacuum cover 4. Furthermore, in the plasma processing apparatus 1 of the fifth embodiment, the control unit 15 uses the detection result of the second pressure gauge P2 to perform a predetermined control process. That is, the control unit 15 uses the detection result of the second pressure gauge P2 to control the valve V11, the valve V12, the valve V1, the valve V2, and the second vacuum pump 17B, thereby controlling the vacuum degree inside the antenna accommodation space AK (details will be described later).

[0114] In the plasma processing apparatus 1 of the fifth embodiment, a connection hole 2d is provided in the housing body 2a. The pressure regulating valve V5, the pipe H4, the pipe H5, the valve V3, the pipe H6, and the first vacuum pump 17A are installed in this connection hole 2d in an airtight manner. In addition, the valve V4 is connected in parallel to the valve V3 via the pipes H7 and H8 and is airtightly installed. Furthermore, the first vacuum pump 17A is equivalent to Figure 1 The vacuum pump PO is shown.

[0115] In addition, in the plasma processing apparatus 1 of the fifth embodiment, the first pressure gauge P1 is airtightly mounted on the housing body 2a of the housing 2. Furthermore, in the plasma processing apparatus 1 of the fifth embodiment, the control unit 15 uses the detection result of the first pressure gauge P1 to perform a predetermined control process. That is, the control unit 15 uses the detection result of the first pressure gauge P1 to control the valve V11, the valve V13, the pressure regulating valve V5, the valve V3, the valve V4, and the first vacuum pump 17A, thereby controlling the vacuum degree inside the plasma generation area HA (details will be described later).

[0116] <Action Example>

[0117] Secondly, refer to Figures 10 to 12 An operation example of the plasma processing apparatus 1 according to the fifth embodiment will be described in detail. Fig.10 Yes means Fig. 9 Flow chart of an operation example of the plasma processing apparatus 1 shown. Fig.11 Yes means Fig. 9 FIG. 1 is a flow chart of another operation example of the plasma processing apparatus 1 shown in FIG. Fig.12 Yes means Fig. 9 FIG. 1 is a flow chart of another operation example of the plasma processing apparatus 1 shown in FIG.

[0118] <Vacuum exhaust>

[0119] First, use Fig.10 An example of vacuum exhaust operation in the plasma processing apparatus 1 of Embodiment 5 will be specifically described. In the following description, the operation of setting the plasma generation area HA and the antenna housing space AK from the atmospheric pressure state to a predetermined vacuum degree will be mainly described.

[0120] like Fig.10 As shown in step S1 of FIG. 1 , when the control unit 15 receives an instruction from the user to vacuum-exhaust the plasma generation area HA and the antenna housing space AK, the control unit 15 sets the valves V1 , V2 , and V3 to the closed state.

[0121] Next, the control unit 15 starts the first vacuum pump 17A and the second vacuum pump 17B (step S2 ). Then, the control unit 15 opens the valve V1 and the pressure regulating valve V5 (step S3 ).

[0122] Next, the control unit 15 sets the valve V4 for slow exhaust to an open state (step S4). In the plasma processing apparatus 1 of the fifth embodiment, by setting the valve V4 to an open state before the valve V3 as described above, exhaust from atmospheric pressure can be performed starting from the slow exhaust inside the plasma generation area HA (processing chamber) and inside the antenna accommodation space AK. As a result, in the fifth embodiment, the possibility of cooling the gas in the processing chamber due to the rapid decompression of the processing chamber can be reduced. Therefore, in the fifth embodiment, it is possible to suppress the water vapor contained in the cooled gas from becoming water and adhering to the inner wall surface of the housing body 2a.

[0123] Furthermore, in the plasma processing apparatus 1 of the fifth embodiment, the pressure difference between the plasma generation area HA and the antenna housing space AK can be suppressed from increasing, and the pressure inside the plasma generation area HA and the antenna housing space AK can be gradually reduced so that the pressure inside the plasma generation area HA and the pressure inside the antenna housing space AK become equal to each other. As a result, in the fifth embodiment, the occurrence of damage to the antenna cover 5 caused by the pressure difference can be reliably suppressed.

[0124] Then, if Fig.10 As shown in step S5, the control unit 15 determines whether the absolute value of the difference between the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 is less than a predetermined set value 1 (for example, 1 kPa). When the control unit 15 determines that the absolute value of the difference is less than the set value 1 (yes in step S5), it proceeds to step S8. In addition, the set value 1 determines a value at which the antenna cover 5 will not be damaged or the like due to the pressure difference, and is set in the control unit 15.

[0125] On the other hand, when the control unit 15 determines that the absolute value of the difference is greater than or equal to the set value 1 (NO in step S5), the control unit 15 determines that an abnormality has occurred in the plasma processing device 1, and sets the valves V1 and V4 to a closed state (step S6). Then, the control unit 15 causes a notification unit such as a display unit or a sound output unit provided in the plasma processing device 1 to notify that an abnormality has occurred (step S7). By performing this abnormality notification, in the plasma processing device 1 of the fifth embodiment, the user can start vacuum exhaust again or start maintenance work after setting the pressure in the processing chamber to a predetermined pressure such as atmospheric pressure by, for example, performing manual operation.

[0126] In addition, if Fig.10As shown in step S8, the control unit 15 determines whether the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 are both less than a predetermined set value 2 (for example, 1 kPa to 10 kPa). When the control unit 15 determines that the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 are both greater than the set value 2 (No in step S8), the control unit 15 enters a standby state.

[0127] On the other hand, when the control unit 15 determines that the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 are both less than the set value 2 (Yes in step S8), the control unit 15 sets the valve V3 to the open state (step S9). Thus, in the plasma processing apparatus 1 of the fifth embodiment, the conductivity between the interior of the plasma generation area HA and the first vacuum pump 17A can be increased, and the interior of the plasma generation area HA can be exhausted at a higher exhaust speed than the slow exhaust using the valve V4, so that the interior of the plasma generation area HA can be set to a low pressure in a shorter time.

[0128] Then, if Fig.10 As shown in step S10, the control unit 15 sets the valve V4 to a closed state. Then, the control unit 15 determines whether the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 are both less than a predetermined set value 3 (for example, 100 Pa) (step S11). When the control unit 15 determines that the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 are both greater than the set value 3 (No in step S11), the control unit 15 enters a standby state.

[0129] On the other hand, when the control unit 15 determines that the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 are both less than the set value 3 (Yes in step S11), the control unit 15 sets the valve V1 to a closed state (step S12). Next, the control unit 15 sets the valve V2 to an open state (step S13), and ends the process.

[0130] <Plasma treatment>

[0131] Second, use Fig.11 An operation example of plasma processing in the plasma processing apparatus 1 according to the fifth embodiment will be described in detail.

[0132] like Fig.11 As shown in step S21, when the control unit 15 receives an instruction from the user to start plasma processing, it operates the processing gas supply unit to start introducing the specified processing gas from the processing gas supply source into the plasma generation area HA and the antenna accommodation space AK.

[0133] Then, the control unit 15 determines whether the detection result of the second pressure gauge P2 is less than a predetermined set value 4 (for example, 0.1 Pa) (step S22). When the control unit 15 determines that the detection result of the second pressure gauge P2 is greater than the set value 4 (No in step S22), the control unit 15 enters a standby state.

[0134] On the other hand, when the control unit 15 determines that the detection result of the second pressure gauge P2 is less than the set value 4 (Yes in step S22), the control unit 15 determines that it is difficult to generate and maintain plasma inside the antenna accommodation space AK. Then, the control unit 15 adjusts the internal pressure of the plasma generation area HA (processing chamber) (step S23).

[0135] Then, if Fig.11 As shown in step S24, the control unit 15 determines whether the detection result of the first pressure gauge P1 is less than a predetermined set value 5 (for example, 1Pa to 20Pa) (step S24). When the control unit 15 determines that the detection result of the first pressure gauge P1 is greater than the set value 5 (No in step S24), the control unit 15 enters a standby state.

[0136] On the other hand, when the control unit 15 determines that the detection result of the first pressure gauge P1 is less than the set value 5 (Yes in step S24), the control unit 15 determines that stable plasma processing can be performed inside the plasma generation area HA, and turns on the power supply 9 to supply high-frequency power to the antenna 8 (step S25). Thus, the predetermined plasma processing starts on the substrate H1 inside the plasma generation area HA.

[0137] Then, if Fig.11 As shown in step S26, the control unit 15 determines whether the preset time for the plasma treatment has passed. When the control unit 15 determines that the elapsed time of the plasma treatment has not passed the preset time (No in step S26), the control unit 15 continues to execute the plasma treatment.

[0138] On the other hand, when the control unit 15 determines that the plasma treatment has lasted for a set time (yes in step S26), the control unit 15 determines that the plasma treatment is completed, turns on the power supply 9, fully opens the pressure regulating valve V5, and stops the operation of the processing gas supply unit (step S27).

[0139] <Open to atmospheric pressure>

[0140] Second, use Fig.12An operation example of the atmospheric pressure release process in the plasma processing apparatus 1 according to Embodiment 5 will be specifically described. In the following description, the operation of the processing gas supply unit will be mainly described.

[0141] like Fig.12 As shown in step S31, when the control unit 15 receives an instruction from the user to open the internal pressure of the plasma generation area HA and the internal pressure of the antenna housing space AK to atmospheric pressure, the valve V11 is closed. Then, the control unit 15 opens the valves V12 and V13 (step S32).

[0142] Next, the control unit 15 sets the valve V11 to an open state (step S33). Then, the control unit 15 determines whether the absolute value of the difference between the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 is less than the set value 1 (for example, 1 kPa) (step S34). When the control unit 15 determines that the absolute value of the difference is less than the set value 1 (yes in step S34), the process proceeds to step S37. In this way, in the plasma processing apparatus 1 of the fifth embodiment, in step S34, by using the set value 1 as the threshold value, the possibility of damage to the antenna cover 5 due to the pressure difference can be greatly reduced.

[0143] On the other hand, when the control unit 15 determines that the absolute value of the difference is greater than or equal to the set value 1 (No in step S34), the control unit 15 determines that an abnormality has occurred in the plasma processing device 1, and sets the valves V11, V12, and V13 to a closed state (step S35). Then, the control unit 15 causes a notification unit such as a display unit or a sound output unit provided in the plasma processing device 1 to notify that an abnormality has occurred (step S36). By performing this abnormality notification, in the plasma processing device 1 of the fifth embodiment, the user can, for example, manually operate to start vacuum exhaust again or maintenance work after setting the pressure in the processing chamber to a predetermined pressure such as atmospheric pressure.

[0144] In addition, if Fig.12 As shown in step S37, the control unit 15 determines whether the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 are both greater than a predetermined set value 6 (for example, atmospheric pressure; 101.3 kPa). When the control unit 15 determines that the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 are both below the set value 6 (No in step S37), the control unit 15 proceeds to step S34.

[0145] On the other hand, when the control unit 15 determines that the detection results of the first pressure gauge P1 and the second pressure gauge P2 are both greater than the set value 6 (yes in step S37), the control unit 15 determines that the atmospheric pressure release processing has been completed and sets valve V11, valve V12, and valve V13 to a closed state (step S38).

[0146] With the above configuration, the plasma processing apparatus 1 of the fifth embodiment achieves the same effects as those of the first embodiment.

[0147] In the plasma processing apparatus 1 of the fifth embodiment, since the second vacuum pump 17B is connected to the antenna accommodating space AK, the antenna accommodating space AK can be easily set to a predetermined vacuum level, and the generation of plasma in the antenna accommodating space AK can be reliably suppressed.

[0148] In the plasma processing apparatus 1 of the fifth embodiment, the control unit 15 executes a predetermined control process using the detection result of the second pressure gauge P2. Therefore, the pressure of the antenna housing space AK can be more appropriately controlled, and the plasma processing apparatus 1 can be operated appropriately.

[0149] [Variant 1]

[0150] use Fig.13 Modification 1 of the present invention will be described in detail. Fig.13 This is a diagram for explaining specific wiring of antennas 81 to 84 in plasma processing apparatus 1 of Modification 1. For convenience of description, members having the same functions as those described in Embodiment 1 are denoted by the same reference numerals, and their description will not be repeated.

[0151] The main difference between this modification example 1 and the above-described embodiment 1 is that two power supplies 9A and 9B are used to operate four antennas 81 , 82 , 83 , and 84 .

[0152] like Fig.13 As shown, in the plasma processing apparatus 1 of this modification example 1, one end of each of the two antennas 81 and 82 is connected in parallel to the power supply 9A via the impedance adjustment unit 10A. The other ends of the antenna 81 and the antenna 82 are connected to the impedance adjustment unit 11A and the impedance adjustment unit 11B, respectively. One end of each of the two antennas 83 and 84 is connected in parallel to the power supply 9B via the impedance adjustment unit 10B. The other ends of the antenna 83 and the antenna 84 are connected to the impedance adjustment unit 11C and the impedance adjustment unit 11D, respectively. Moreover, in the plasma processing apparatus 1 of this modification example 1, the control unit 15 controls in the following manner, that is, by changing the capacitance of each variable capacitor of the impedance adjustment unit 11A to the impedance adjustment unit 11D, high-frequency power is efficiently supplied to the antennas 81 to 84.

[0153] With the above-described structure, the plasma processing apparatus 1 of the first modification can achieve the same effects as those of the first embodiment.

[0154] [Variant 2]

[0155] use Fig.14 Modification 2 of the present invention will be described in detail. Fig.14 This is a diagram for explaining specific wiring of antennas 81 to 84 in plasma processing apparatus 1 according to Modification 2. For convenience of description, members having the same functions as those described in Embodiment 1 are denoted by the same reference numerals, and their description will not be repeated.

[0156] The main difference between this modification example 2 and the above-described embodiment 1 is that four antennas 81 , 82 , 83 , and 84 are operated using two power supplies 9A and 9B and impedance adjusters 11E and 11D.

[0157] like Fig.14 As shown, in the plasma processing apparatus 1 of the present modification example 2, one end of the antenna 81 is connected to the power supply 9A via the impedance adjustment section 10A. One end of the antenna 82 is connected to the other end of the antenna 81 via the impedance adjustment section 11E. The other end of the antenna 82 is grounded. One end of the antenna 83 is connected to the power supply 9B via the impedance adjustment section 10B. One end of the antenna 84 is connected to the other end of the antenna 83 via the impedance adjustment section 11F. The other end of the antenna 84 is grounded. Moreover, in the plasma processing apparatus 1 of the present modification example 2, the control section 15 controls in the following manner, that is, by changing the capacitance of each variable capacitor of the impedance adjustment section 11E and the impedance adjustment section 11F, high-frequency power is efficiently supplied to the antennas 81 to 84.

[0158] With the above-described structure, the plasma processing apparatus 1 of the second modification can achieve the same effects as those of the first embodiment.

[0159] [Variant 3]

[0160] use Fig.15 Modification 3 of the present invention will be described in detail. Fig.15 This is a diagram for explaining specific wiring of antennas 81 to 84 in plasma processing apparatus 1 according to Modification 3. For convenience of description, members having the same functions as those described in Embodiment 1 are denoted by the same reference numerals, and description thereof will not be repeated.

[0161] The main difference between the third modification and the first embodiment is that the four antennas 81 , 82 , 83 , and 84 are operated using the power supply 9 , the impedance adjuster 11G, the impedance adjuster 11H, and the like.

[0162] like Fig.15 As shown, in the plasma processing apparatus 1 of the present modification example 3, one end of the antenna 81 is connected to the power supply 9 via the impedance adjustment unit 10. One end of the antenna 82 is connected to the other end of the antenna 81 via the impedance adjustment unit 11G. The other end of the antenna 82 is grounded. One end of the antenna 83 is connected to the impedance adjustment unit 10. One end of the antenna 84 is connected to the other end of the antenna 83 via the impedance adjustment unit 11H. The other end of the antenna 84 is grounded. Moreover, in the plasma processing apparatus 1 of the present modification example 3, the control unit 15 controls in the following manner, that is, by changing the capacitance of each variable capacitor of the impedance adjustment unit 11G and the impedance adjustment unit 11H, high-frequency power is efficiently supplied to the antennas 81 to 84.

[0163] With the above-described structure, the plasma processing apparatus 1 of the third modification can achieve the same effects as those of the first embodiment.

[0164] [Implementation method 6]

[0165] use Fig.16 and Fig.17 Embodiment 6 of the present invention will be described in detail. Fig.16 This is a diagram for explaining the structure of a plasma processing apparatus 1 according to a sixth embodiment of the present invention. Fig.17 yes Fig.16 For the sake of convenience, the same reference numerals are given to components having the same functions as those described in the first embodiment, and their description will not be repeated.

[0166] The main difference between the sixth embodiment and the first embodiment is that the antenna cover 5 is directly fixed to the vacuum cover 4 .

[0167] like Fig.16 and Fig.17 As shown, in the plasma processing apparatus 1 of the sixth embodiment, the antenna cover 5 is fixed to the vacuum cover 4 on the inner side of the housing 2 relative to the vacuum cover 4. Specifically, the cover support portion 5b is fixed to the inner surface of the vacuum cover 4 using screws not shown, for example, so that the antenna cover 4 is directly mounted on the vacuum cover 4.

[0168] In addition, in this embodiment 6, if Fig.17 As shown in the figure, a flange 33 having a plurality of openings is airtightly mounted on the upper end surface of the housing 2 (housing body 2a). In the sixth embodiment, when the flange 33 is mounted on the housing body 2a, the openings of the flange 33 are included in the first opening 2b that connects the inside and the outside of the processing chamber. In other words, when the flange 3 and the vacuum cover 4 are mounted on the upper end surface of the housing 2, the vacuum cover 4 detachably mounted on the housing 2 closes the first opening 2b together with the flange 33.

[0169] like Fig.17 As shown, the flange 33 includes, for example, five flange members 33a, 33b, 33c, 33d, and 33e, which function as spacers for mounting the vacuum cover 4 on the housing 2. In other words, each of the flange members 33a to 33e is constructed using a plate having a step portion formed thereon for mounting the vacuum cover 4. In addition, one end and the other end of each of the flange members 33a to 33e are fixed to the upper surfaces of the two sides of the housing body 2a that face each other (not shown). The flange members 33a to 33e are parallel to each other along the long side direction of the antenna 8 and in a direction orthogonal to the long side direction (i.e., Fig.17 They are installed on the shell 2 in a manner that they are evenly spaced in the left-right direction of the paper surface).

[0170] With the above-described structure, the plasma processing apparatus 1 of the sixth embodiment can achieve the same effects as those of the first embodiment.

[0171] In the sixth embodiment, the vacuum cover 4, the antenna cover 5, and the antenna 8 are integrally formed, and thus these components can be replaced together when replacement work is performed. As a result, in the sixth embodiment, the maintainability of the plasma processing apparatus 1 can be further improved.

[0172] In addition, in the sixth embodiment, the antenna cover 5 is fixed to the vacuum cover 4, so when installing or removing the antenna 8, there is no need to directly operate the antenna cover 5. Therefore, in the sixth embodiment, the possibility of damage such as a defect or a crack in the antenna cover 5 can be greatly reduced, thereby reducing the maintenance time and cost of the plasma processing device 1.

[0173] In addition, in this embodiment 6, if Fig.16 and Fig.17 As shown in the example, the antenna cover 5 is directly mounted on the vacuum cover 4, so before the vacuum cover 4 for fixing the antenna 8 is mounted on the housing 2, the positions of the antenna cover 5 and the antenna 8 can be adjusted in advance. In other words, the relative positions of the antenna cover 5 and the antenna 8 inside the housing 2 can be determined in advance. Therefore, in this embodiment 6, compared with the above-mentioned embodiments 1 to 5, the density of the plasma can be suppressed from changing in the direction of the substrate H1 to be processed, and the desired density distribution of the plasma can be easily obtained inside the housing 2.

[0174] [Implementation method 7]

[0175] use Fig.18 and Fig.19 Embodiment 7 of the present invention will be described in detail. Fig.18 This is a diagram for explaining the structure of a plasma processing apparatus 1 according to a seventh embodiment of the present invention. Fig.19 yes Fig.18 For the sake of convenience, the same reference numerals are given to components having the same functions as those described in the first embodiment, and their description will not be repeated.

[0176] The main difference between the seventh embodiment and the first embodiment is that a spacer member 18 is interposed between the vacuum cover 4 and the flange 33 .

[0177] like Fig.18 and Fig.19 As shown, in the plasma processing apparatus 1 of the seventh embodiment, the spacer member 18 is provided between the vacuum cover 4 and the flange 33 for each antenna 8. The spacer member 18 is formed in a frame shape using, for example, a metal material and is provided on the upper end surface of the housing body 2a. The spacer member 18 supports the four sides of the vacuum cover 4 formed in a rectangular shape.

[0178] With the above configuration, the plasma processing apparatus 1 of the seventh embodiment achieves the same effects as those of the first embodiment.

[0179] In addition, in the plasma processing apparatus 1 of the seventh embodiment, since the vacuum cover 4 and the antenna 8 mounted on the vacuum cover 4 are supported on the housing 2 via the spacer member 18, the position of the antenna 8 can be adjusted by adjusting the spacer member 18. In other words, in the seventh embodiment, unlike the first embodiment, the height adjustment of the antenna 8 relative to the substrate H1 to be processed and the inclination adjustment in the long side direction thereof can be easily performed without changing the flange 33.

[0180] 〔Summarize〕

[0181] In order to solve the above-mentioned problem, a first form of a plasma processing device of the present invention is a plasma processing device including a processing chamber, the plasma processing device including: a shell having a first opening portion connecting the processing chamber with an external environment; an outer cover installed on the first opening portion in a detachable manner and closing the first opening portion; an inner cover supported inside the first opening portion and having dielectric properties; and an antenna arranged in an enclosed space formed by at least the outer cover and the inner cover, for generating inductively coupled plasma, the inner cover having a second opening portion opened on the outer cover side and constituting a part of the enclosed space, and the inner cover being removable from the first opening portion.

[0182] With the above structure, it is possible to provide a plasma processing apparatus with improved maintainability.

[0183] A second aspect of the present invention is the plasma processing apparatus according to the first aspect, wherein a suppression dielectric for suppressing generation of the plasma may be provided in the surrounding space.

[0184] According to the above configuration, the generation of plasma in the surrounding space can be suppressed, and damage to the antenna and the outer cover can be suppressed.

[0185] A third aspect of the present invention is the plasma processing apparatus according to the first aspect or the second aspect, wherein a flange for supporting the inner cover may be provided on the first opening side of the housing.

[0186] With this structure, the inner cover can be easily installed on the housing.

[0187] A fourth aspect of the present invention is a plasma processing apparatus as described in the third aspect, and may further include a support platform, wherein the support platform is disposed between the outer cover and the flange, and supports the outer cover relative to the shell in a detachable manner, and the inner cover is supported on the flange via the support platform.

[0188] With the above structure, the antenna and the inner cover can be removed integrally with the outer cover, thereby further improving the maintainability.

[0189] A fifth aspect of the present invention is the plasma processing apparatus as described in any one of the first to fourth aspects, further comprising a vacuum pump connected to the enclosed space.

[0190] With the above configuration, the surrounding space can be easily set to a predetermined vacuum degree, and the generation of plasma in the surrounding space can be reliably suppressed.

[0191] According to a sixth aspect of the present invention, in the plasma processing apparatus according to any one of the first to fifth aspects, the outer cover and the inner cover may be respectively mounted airtightly on the housing, and the antenna may be mounted airtightly on the outer cover.

[0192] With this structure, a predetermined vacuum degree in the surrounding space can be easily maintained.

[0193] A seventh aspect of the present invention is the plasma processing apparatus as described in any one of the first aspect to the sixth aspect, further comprising a pressure gauge for detecting the pressure of the surrounding space.

[0194] With the above structure, the pressure of the surrounding space can be detected using a pressure gauge.

[0195] According to an eighth aspect of the present invention, the plasma processing apparatus according to the seventh aspect may further include a control unit that controls each unit of the plasma processing apparatus, and the control unit uses the detection result of the pressure gauge to perform a predetermined control process.

[0196] With the above configuration, the control unit can appropriately operate the plasma processing apparatus based on the detection result of the pressure gauge.

[0197] A ninth aspect of the present invention is the plasma processing apparatus according to the eighth aspect, further comprising a power supply for supplying electric power to the antenna, and the control unit controls the power supply as the control process.

[0198] With the above configuration, the control unit can operate the antenna more appropriately, and can reliably suppress the generation of plasma in the surrounding space, thereby more reliably suppressing the generation of damage to the antenna.

[0199] According to a tenth aspect of the present invention, in the plasma processing apparatus according to any one of the first aspect or the second aspect, the inner cover may be fixed to the outer cover inside the housing.

[0200] According to the above configuration, since the inner cover, the outer cover, and the antenna are integrally formed, the maintainability can be further improved.

[0201] According to an eleventh aspect of the present invention, in the plasma processing apparatus according to any one of the first to tenth aspects, the outer cover may be mounted on the housing via a spacer member.

[0202] According to the above structure, the position of the antenna can be adjusted by adjusting the spacer member, thereby making it easy to adjust the height of the antenna relative to the object to be processed and the inclination of the antenna in the longitudinal direction, thereby making it easy to construct a plasma processing device capable of performing high-precision plasma processing.

[0203] The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present invention.

[0204] Explanation of symbols

[0205] 1: Plasma treatment device

[0206] 2: Shell

[0207] 2b: First opening

[0208] 3: Flange

[0209] 4: Vacuum cover (outer cover)

[0210] 5: Radome (inner cover)

[0211] 5c: Cover opening

[0212] 8, 81, 82, 83, 84: Antenna

[0213] 9, 9A, 9B: Power supply

[0214] 14: Suppressing dielectrics

[0215] 15: Control Department

[0216] 16: Support table

[0217] 17B: Second vacuum pump (vacuum pump)

[0218] 18: Spacer member

[0219] H1: substrate to be processed (object to be processed)

[0220] AK: Antenna accommodation space (enclosed space)

[0221] HA: Plasma generation area (processing chamber)

[0222] P2: Second pressure gauge (pressure gauge)

Claims

1. A plasma processing device, comprising a processing chamber, and the plasma processing device comprises: A housing having a first opening for connecting the processing chamber to an external environment; an outer cover detachably mounted on the first opening and closing the first opening; an inner cover supported inside the first opening and having dielectric properties; and The antenna is disposed in a space surrounded by at least the outer cover and the inner cover, and is used to generate inductively coupled plasma. The inner cover is formed with a second opening portion which is open on the outer cover side and constitutes a part of the surrounding space, and the inner cover is detachable from the first opening portion.

2. The plasma processing apparatus according to claim 1, wherein: A suppression dielectric for suppressing generation of the plasma is provided in the surrounding space.

3. The plasma processing apparatus according to claim 1, wherein: A flange that supports the inner cover is provided on the first opening side of the housing.

4. The plasma processing device according to claim 3, further comprising a support platform, the support platform being disposed between the outer cover and the flange and supporting the outer cover relative to the housing in a detachable manner, The inner cover is supported by the flange via the support stand. 5 . The plasma processing apparatus according to claim 1 , further comprising a vacuum pump connected to the enclosed space.

6. The plasma processing apparatus according to claim 5, wherein: The outer cover and the inner cover are respectively mounted airtightly on the housing. The antenna is airtightly mounted to the outer cover. 7 . The plasma processing apparatus according to claim 5 , further comprising a pressure gauge for detecting the pressure of the surrounding space.

8. The plasma processing device according to claim 7, further comprising a control unit, wherein the control unit controls each unit of the plasma processing device. The control unit executes a predetermined control process using a detection result of the pressure gauge.

9. The plasma processing apparatus according to claim 8, further comprising a power supply for supplying power to the antenna. The control unit performs control of the power supply as the control process.

10. The plasma processing apparatus according to claim 1, wherein: The inner cover is fixed to the outer cover on the inner side of the housing.

11. The plasma processing apparatus according to claim 1, wherein: The outer cover is mounted on the housing via a spacer member.

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