Wire cutting equipment and wire cutting method

Abstract

The invention provides wire cutting equipment and a wire cutting method. The wire cutting equipment comprises at least two wire shafts, a wire cutting device and a wire cutting device, the cutting wire is wound on the at least two wire shafts so as to form a cutting wire segment array used for cutting the SiC crystal ingot; and the controller is configured to control the bobbin to drive the cutting line segment array to reciprocate in the moving direction parallel to the axial direction of the SiC crystal ingot in the cutting process of the SiC crystal ingot.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing, and in particular to a wire cutting device and a wire cutting method. Background Art

[0002] In the field of semiconductor manufacturing, SiC (silicon carbide) materials are widely used in high-power and high-frequency electronic devices due to their high hardness and excellent thermal stability. Such applications place strict requirements on various parameters of SiC wafers, among which the flatness of SiC wafers is the key to ensuring stable performance of devices under high loads. However, in the production process of SiC wafers, many factors affect the flatness, resulting in unsatisfactory final wafer quality.

[0003] The wire cutting process is the first step in processing SiC ingots into wafers. This process has an important impact on the flatness of the wafer. Due to the high hardness of the SiC material itself, the cutting wire is prone to uneven force during the wire cutting process, making it difficult to accurately control the cutting path, making it difficult to achieve the expected cutting effect. This processing error often leads to uneven thickness of the cut wafers, affecting the flatness and processing accuracy of subsequent processes.

[0004] In addition, existing wire cutting equipment is mainly for cutting standard thickness wafers, and lacks support for special shapes or customized thicknesses in design, making it difficult to meet the specific requirements of complex processes for wafer shapes. Therefore, it is necessary to improve the wire cutting process in the existing technology to effectively control the flatness of SiC wafers and realize the manufacture of customized wafer shapes. This is of great significance for improving the processing quality of SiC wafers and meeting the manufacturing requirements of high-performance electronic devices. Summary of the invention

[0005] The present disclosure provides a wire cutting device and a wire cutting method. By using the wire cutting device, the position of the cutting line segment array relative to the crystal ingot can be adjusted during the wire cutting operation, so that the cutting line segment array can cut the SiC crystal ingot according to the expected cutting path, thereby obtaining a SiC wafer of a desired shape.

[0006] The technical solution of the present disclosure is achieved as follows: In a first aspect, the present disclosure provides a wire cutting device, the wire cutting device comprising: At least two spools of thread; A cutting wire wound on the at least two spools to form a cutting wire segment array for cutting the SiC ingot; A controller is configured to control the wire shaft to drive the cutting wire segment array to reciprocate in a moving direction parallel to the axial direction of the SiC ingot during the cutting process of the SiC ingot.

[0007] In some optional examples, the wire cutting device also includes a first driver for driving the wire shaft to move in the moving direction, and the controller drives the wire shaft to drive the cutting wire segment array to reciprocate in the moving direction by controlling the first driver.

[0008] In some optional examples, the controller is configured to control the first driver to drive the wire axis so that the cutting wire segment array moves toward the C-plane of the SiC ingot before cutting to the radial center of the SiC ingot, and moves toward the Si-plane of the SiC ingot after passing the radial center.

[0009] In some optional examples, the wire cutting device further includes a sensor for sensing a movement amount of the wire shaft in the moving direction, wherein the controller is configured to control the driving of the wire shaft by the first driver according to the movement amount sensed by the sensor.

[0010] In some optional examples, the controller is configured to control the at least two reels to move synchronously in the moving direction.

[0011] In some optional examples, the wire cutting device further comprises an injector for supplying cutting fluid to the cutting wire segment array, and the controller is configured to control the injector and the cutting wire segment array to move synchronously in the moving direction.

[0012] In some optional examples, the first driver is a cylinder connected to the spool.

[0013] In some optional examples, the cutting line segment array moves in the moving direction at certain intervals.

[0014] In some optional examples, the wire cutting equipment also includes a supporting component for supporting the SiC ingot, and the controller is further configured to control the supporting component to drive the SiC ingot to swing in a plane perpendicular to the central axis of the SiC ingot during the cutting process of the SiC ingot.

[0015] In a second aspect, the present disclosure provides a wire cutting method, which is performed by the wire cutting apparatus according to the first aspect.

[0016] The present disclosure provides a wire cutting device and a wire cutting method. Under the control of a controller, the wire axis of the wire cutting device can drive the array of cutting wire segments wound thereon to reciprocate in a moving direction parallel to the axial direction of the SiC ingot being cut, so as to correct the cutting trajectory and achieve cutting of a specific trajectory, significantly improving the cutting accuracy, flexibility and stability. Whether it is to correct external interference or to achieve cutting of a specific shape, the wire cutting device can provide an efficient solution to ensure the quality and processing accuracy of the wafer, and is suitable for various complex processing scenarios and high-standard requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Schematic diagram of wire cutting equipment provided for some embodiments of the present disclosure.

[0018] Figure 2 Schematic diagram of wire cutting equipment provided for other embodiments of the present disclosure.

[0019] Figure 3 Schematic diagram of wire cutting equipment provided for some further embodiments of the present disclosure.

[0020] Figure 4 A schematic diagram of a portion of a wire cutting apparatus provided for some embodiments of the present disclosure.

[0021] Figure 5 A side view of a SiC wafer obtained by cutting using the wire sawing equipment provided by some embodiments of the present disclosure.

[0022] Figure 6 Schematic diagram of wire cutting equipment provided for some embodiments of the present disclosure.

[0023] Figure 7 Schematic diagram of wire cutting equipment provided for other embodiments of the present disclosure.

[0024] Figure 8 Schematic diagram of wire cutting equipment provided for some further embodiments of the present disclosure.

[0025] Fig. 9 A schematic diagram of a wire cutting device provided for some further embodiments of the present disclosure.

[0026] Fig.10 A schematic diagram of a portion of a wire cutting apparatus provided for some embodiments of the present disclosure. DETAILED DESCRIPTION

[0027] The technical solutions in the present disclosure will be described clearly and completely below in conjunction with the accompanying drawings in the present disclosure.

[0028] See also Figure 1, which shows a schematic diagram of a wire cutting device 1 provided in some embodiments of the present disclosure. It should be clear that, Figure 1 The structures shown in the figure are only used to explain the basic principles, and do not mean that those skilled in the art will not make any changes according to the specific implementation status. Figure 1 The components shown are added or deleted. The embodiments of the present disclosure do not impose specific restrictions on this.

[0029] Depend on Figure 1 As shown, the wire cutting device 1 may include a wire cutting unit 11 and a carrying unit 12. The wire cutting unit 11 may include a plurality of spools 111, a cutting line 112 and a cutting liquid supply unit 113, and the cutting line 112 is wound on the spool 111 to form an array of mutually parallel cutting line segments. The carrying unit 12 is used to carry the ingot. In some embodiments of the present disclosure, the carrying unit 12 may be located above the wire cutting unit 11 in the vertical direction, so as to use gravity to stably press the carried ingot on the cutting line, so that the ingot is more stable during the cutting process, thereby reducing vibration and deviation.

[0030] Refer to the following Figure 1 The number of the bobbins 111 is two as an example. The two bobbins 111 are arranged opposite to each other with their central axes parallel to each other. Two cutting liquid supply units 113 are respectively located directly above the two bobbins 111 and are used to spray cutting liquid to the two bobbins 111 and the cutting line 112. The reciprocating directions of the bobbins 111 and the cutting line 112 toward and away from the carrier unit 12 are as follows: Figure 1 As shown by the solid arrow in FIG. 1 . The carrying unit 12 is used to load and fix the ingot S to be processed. Figure 1 and Figure 2 In the example shown, the carrier unit 12 may include a base 121 and an intermediate member 122. The ingot S to be processed may be fixed to the base 121 via the intermediate member 122, for example, the ingot to be processed may be bonded to the lower surface of the base via its circumferential surface, thereby being fixed to the base.

[0031] for Figure 1 The wire cutting device 1 shown in the figure can move the bearing unit 12 in the vertical direction toward the cutting line segment array so that the ingot to be processed is close to the cutting line segment array. After the cutting line segment array and the ingot S to be processed are in contact with each other, the ingot S to be processed is cut by the movement of each cutting line segment array in the cutting line segment array along its extension direction and the bearing unit 12 continues to feed in the vertical direction toward the cutting line segment array. It should be noted that the embodiment of the present disclosure realizes the movement of the wire bearing unit 12 through a lifting device (not shown in the figure). It can be understood that those skilled in the art can also realize the movement of the bearing unit 12 through other methods according to actual needs and implementation scenarios, and the embodiment of the present disclosure will not elaborate on this.

[0032] A plurality of wire grooves 111A are provided on the circumferential surface of the bobbin 111 to guide and fix the cutting wire 112 to ensure that it maintains a stable tension and position during the cutting process. Typically, the wire grooves 111A are made of wear-resistant resin and are evenly distributed on the circumferential surface of the bobbin 111. The width, depth and spacing of each wire groove are determined during the manufacturing process and cannot be adjusted. This means that such wire grooves can only be used with cutting wires of a specific diameter and type, and the wire grooves with fixed width and spacing can only cut silicon wafers of a specific thickness, and cannot be flexibly adjusted according to different production requirements.

[0033] for Figure 1 In the wire cutting device 1 shown in FIG. 1 , since the cutting wire 112 and the ingot S only move away from and toward each other in a straight line, the cutting path of the cutting wire 112 is also along a straight line. Ideally, a flat wafer can be cut along a straight cutting path. However, according to actual production conditions, the wafers obtained by multi-wire cutting are often not flat.

[0034] In this regard, the inventors have found through research and analysis that one of the reasons that affects the flatness of the wafer obtained by cutting is the uneven heating of the ingot when it is cut. Specifically, taking the cutting of SiC ingots as an example, a cutting wire made of steel wire is usually used to cut the SiC ingot. During the cutting process, the cutting wire is in continuous contact with the high-hardness SiC ingot to generate friction and generate a large amount of heat. As the steel wire cuts from the circumferential edge of the SiC ingot, the contact range between the steel wire and the SiC ingot gradually increases, and reaches a maximum when cutting to the diameter of the SiC ingot. After passing the diameter, as the cutting process advances, the contact range between the steel wire and the SiC ingot gradually decreases until the steel wire cuts out the SiC ingot. Correspondingly, during the entire cutting process, the heat generated by the friction between the steel wire and the SiC ingot also increases first and reaches a maximum at the diameter position of the SiC ingot, and then gradually decreases as the cutting process advances. Therefore, a large amount of heat will be generated and accumulated in the SiC ingot, especially at the axial center and radial center of the SiC ingot. The accumulated heat will cause the ingot to deform, and the closer to the axial center and radial center of the ingot, the greater the deformation. For example, the ingot will expand from the axial center toward both ends of the axial direction. The deformed ingot will cause the cutting line segment during cutting to deviate from the predetermined cutting path, making it difficult for the wafer shape obtained by wire cutting to meet expectations.

[0035] The inventors also found that after the wafer obtained by wire cutting is used as a substrate for epitaxial growth process, the shape of the wafer will be affected again. This effect is particularly prominent for SiC wafers. Epitaxial growth of SiC wafers is usually carried out on the Si (silicon) surface. This causes the Si surface and the C (carbon) surface of the SiC wafer to deform to varying degrees, wherein the Si surface is convex in the center and the C surface is concave in the center. Therefore, even if a flat SiC wafer becomes an epitaxial wafer after undergoing the epitaxial process, it will be curved. The inventors also found in actual production and experiments that if the SiC wafer is already curved with a convex Si surface and a concave C surface before undergoing the epitaxial process, then after undergoing the epitaxial process, the wafer will be more severely bent and deformed with the epitaxial layer. That is to say, for the epitaxial wafer obtained, its Si surface is more convex and its C surface is more concave. Severe deformation will cause the epitaxial wafer to fail to meet product requirements.

[0036] In view of the above situation, the embodiments of the present disclosure are intended to provide a wire cutting device and a wire cutting method. By using the wire cutting device, the position of the cutting wire segment array relative to the ingot can be adjusted during the wire cutting operation, so that the cutting wire segment array can cut the SiC ingot according to the expected cutting path, thereby obtaining a SiC wafer of a desired shape.

[0037] The embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.

[0038] See also Figure 2 , which shows a wire cutting device 2 provided by some embodiments of the present disclosure. The wire cutting device 2 may include at least two spools 21, a cutting wire 22, and a controller 23. The cutting wire 22 may be wound around the at least two spools 21 to form a cutting wire segment array for cutting the SiC ingot 200. The controller 23 may be configured to control the spool 21 to drive the cutting wire segment array to reciprocate in a moving direction parallel to the axial direction of the SiC ingot 200 during the cutting process of the SiC ingot 200.

[0039] exist Figure 2 In the illustrated embodiment, the SiC ingot 200 may be substantially cylindrical and its central axis is shown by a dashed line. It should be noted that the axial direction of the SiC ingot 200 refers to the direction in which the central axis of the SiC ingot 200 is located.

[0040] For ease of explanation, Figure 2, a wire cutting device 2 including two wire shafts 21 is exemplarily shown. It is to be understood that the wire cutting device 2 may include more wire shafts, and the present disclosure does not limit this. The two wire shafts 21 may be arranged spaced apart from each other and the distance between them is greater than the diameter of the SiC ingot 200 to allow the SiC ingot 200 to be cut therebetween. A plurality of wire grooves 21A arranged approximately along the direction of the central axis thereof, i.e., the axial direction thereof, may be provided on the circumferential surface of each wire shaft 21. The central axis of the wire shaft 21 is Figure 2 Each wire groove 21A may extend along the circumferential direction of the bobbin 21. When the cutting wire 22 is wound on the two bobbins 21, it may be wound in the wire grooves 21A on the two bobbins 21 in sequence, thereby forming a cutting wire segment array extending between the two bobbins 21 and arranged along the axial direction of the bobbins 21. Each cutting wire segment in the cutting wire segment array may reciprocate along its extension direction to perform a cutting operation.

[0041] The SiC ingot 200 can be arranged directly above the cutting line segment array, and the axial direction of the SiC ingot 200 can be roughly parallel to the arrangement direction of the cutting line segments, that is, the axial direction of the SiC ingot 200 can be roughly perpendicular to each cutting line segment in the cutting line segment array.

[0042] The wire cutting device 2 can move the SiC ingot 200 toward the direction of the cutting wire segment array. Figure 2 As shown, the SiC ingot 200 can be moved toward the cutting line segment array located below it, that is, moved in the direction indicated by arrow A1. When the SiC ingot 200 moves to contact the cutting line segment array, it means that the cutting operation officially starts. As the SiC ingot 200 continues to move in this direction, the cutting line segment array gradually cuts the SiC ingot 200 through reciprocating motion. It should be noted that the direction in which the SiC ingot 200 moves when being cut is also called the feed direction, as shown in FIG. Figure 2 As indicated by arrows A1 and A2.

[0043] Different from conventional wire cutting equipment, the wire shaft 21 of the wire cutting equipment 2 provided in the embodiment of the present disclosure is not fixed and immobile, but can reciprocate in a moving direction parallel to the axial direction of the SiC ingot 200. Figure 2As an example, the bobbin 21 can move along a first direction B1 and a second direction B2 opposite to the first direction, that is, the first direction B1 and the second direction B2 are the moving directions of the bobbin 21, wherein the first direction B1 and the second direction B2 are on the same straight line and are both parallel to the axial direction of the SiC ingot 200. Therefore, when the bobbin 21 moves along the first direction B1 and the second direction B2, the cutting line segment array also moves along with the bobbin 21 along the first direction B1 and the second direction B2. Since the first direction B1 is opposite to the second direction B2 and is on the same straight line, the movement of the bobbin 21 and the cutting line segment array along the first direction B1 and the second direction B2 can also be referred to as reciprocating motion.

[0044] During the actual cutting process, the cutting line segment may be affected by external factors and deviate from the predetermined cutting trajectory. These external factors include, for example, uneven internal stress of the SiC ingot, thermal expansion, mechanical vibration of the equipment, etc. By controlling the movement of the bobbin 21, the cutting line segment array can be translated in a moving direction parallel to the axial direction of the SiC ingot 200. This adjustment can change the direction of force applied by the cutting line segment to the SiC ingot 200, offset the impact of external interference, and gradually adjust the actual cutting trajectory of the cutting line segment back to the predetermined cutting trajectory. This also forms a cutting path correction system, which can realize automatic adjustment of the cutting path, thereby effectively reducing the cutting error caused by external interference, so that the shape of the SiC wafer after cutting is more in line with the predetermined design, meeting the high-precision requirements and avoiding the impact of cutting deviations on the accuracy of the SiC wafer.

[0045] In addition, by controlling the cutting line segment array to translate in a moving direction parallel to the axial direction of the SiC ingot 200, a specific cutting trajectory can be achieved. For example, the cutting line can be cut along a predetermined path in a curve or a specific geometric shape to produce a wafer of a specific shape. In other words, the translational motion provides the device with flexible trajectory control capabilities, allowing it to not only perform straight-line cutting, but also adapt to more complex cutting requirements. By flexibly adjusting the cutting trajectory, the wire cutting device 2 can cut wafers of different shapes and sizes, making the device more adaptable and meeting diverse product requirements.

[0046] Some embodiments of the present disclosure provide a wire cutting device 2. Under the control of the controller 23, the wire shaft 21 of the wire cutting device 2 can drive the array of cutting wire segments wound thereon to reciprocate in a moving direction parallel to the axial direction of the SiC ingot 200 being cut, so as to correct the cutting trajectory and achieve cutting of a specific trajectory, which significantly improves the cutting accuracy, flexibility and stability. Whether it is to correct external interference or to achieve cutting of a specific shape, the wire cutting device 2 can provide an efficient solution to ensure the quality and processing accuracy of the wafer, and is suitable for various complex processing scenarios and high-standard requirements.

[0047] In some embodiments of the present disclosure, see Figure 3 The wire cutting device 2 may further include a first driver 24 for driving the wire shaft 21 to move in the moving direction. The controller 23 may drive the wire shaft 21 to drive the cutting wire segment array to reciprocate in the moving direction by controlling the first driver 24.

[0048] like Figure 3 As shown, each bobbin 21 is equipped with a first driver 24. Each first driver 24 can be connected to a controller 23. The controller 23 can send a control instruction to the first driver 24 in a wired or wireless manner. The first driver 24 can drive the bobbin 24 to move accurately in the moving direction according to the received instruction, so that the cutting line segment array can reciprocate in the first direction B1 and the second direction B2 as the bobbin 24 moves.

[0049] The first driver 24 not only helps to make the movement of the bobbin 21 and the cutting wire segment array more stable, but also can respond to the instructions of the controller 23 in a timely manner to perform driving operations. Since the controller 23 can determine the movement strategy of the cutting wire segment array according to the actual situation of the SiC ingot, the cutting requirements and the detected interference factors, combined with the advantages of the timely response and precise driving of the first driver 24, the wire cutting device 2 can dynamically adjust the movement speed, direction and amplitude of the bobbin 21 in a flexible and precise manner to ensure that the motion trajectory of the cutting wire segment is always in an ideal state and maintain the accuracy of the cutting. In short, the coordinated control of the controller 23 and the first driver 24 ensures the stability and accuracy of the cutting process.

[0050] As mentioned above, when the SiC wafer undergoes the epitaxial growth process, the Si surface and the C surface will be deformed to varying degrees. Therefore, the SiC epitaxial wafer obtained after epitaxy will be curved with the center of the Si surface convex and the center of the C surface concave.

[0051] In response to this problem, the inventors found through research and practice that if the SiC wafer is cut into a curved shape with the center of the Si surface concave and the center of the C surface convex, the epitaxial wafer made from this shape of SiC wafer will have a flatter appearance, that is, the degree of curvature is reduced or even no longer curved. This is because the epitaxial process will cause the SiC wafer to bend in the opposite direction, thereby compensating for the curvature of the SiC wafer before epitaxy.

[0052] To this end, in some embodiments of the present disclosure, the controller 23 is configured to control the first driver 24 to drive the wire shaft 21 so that the cutting wire segment array moves toward the C-plane of the SiC ingot 200 before cutting to the radial center of the SiC ingot 200, and moves toward the Si-plane of the SiC ingot after passing the radial center.

[0053] The SiC wafer obtained after cutting the SiC ingot 200 using the cutting method in the above embodiment is Figure 4 The shape shown in Figure 4 As shown, the SiC ingot 200 has just been cut and has not yet been separated from the wire saw 2, so the SiC wafers are still arranged together.

[0054] exist Figure 5 It is shown in Figure 4 A side view of a SiC wafer in FIG. As can be seen from the figure, the center of the SiC wafer is protruding on the C-side and concave on the Si-side. After the epitaxial growth process begins, the SiC wafer also begins to deform in the opposite direction, that is, its center begins to protrude toward the Si-side, while the C-side begins to concave. Under the condition of appropriate epitaxial temperature and time, at the end of the epitaxial growth process, the SiC wafer can be deformed into a flat shape to meet product requirements.

[0055] The above-mentioned cutting strategy can also be applied to the correction of the cutting path. For example, the C-face and Si-face of the SiC ingot may show different cutting behaviors and stress states during the cutting process due to different structural characteristics and thermal expansion coefficients. In this case, the above-mentioned cutting strategy can be used to adjust the cutting path according to the requirements of different cutting surfaces, so as to adapt to the requirements of different cutting surfaces of the SiC ingot to the greatest extent, reduce the cutting errors between different surfaces, and thus optimize the cutting effect, so that the cut wafers are more in line with the expected shape and quality.

[0056] In order to enable the wire cutting device 2 to have the ability of real-time feedback and precise control, thereby further improving the cutting accuracy and stability, in some embodiments of the present disclosure, see Figure 6 The wire cutting device 2 may further include a sensor 25 for sensing the movement amount of the wire shaft 21 in the moving direction, wherein the controller 23 is configured to control the first driver 24 to drive the wire shaft 21 according to the movement amount sensed by the sensor 25 .

[0057] A sensor 25 may be provided on each spool 21. The sensors 25 may all be connected to the controller 23. The sensors 25 may be configured to monitor the movement of the spool 21 in the moving direction in real time during the cutting process, and feed back the data to the controller 23. The controller 23 may precisely control the first driver 24 according to the feedback information of the sensor 25, thereby ensuring that the movement of the spool 21 and the cutting line segment array meets the predetermined cutting trajectory and requirements.

[0058] Through the real-time feedback of the sensor 25, the controller 23 can accurately control the moving path of the cutting line segment to prevent cutting deviations caused by error accumulation and ensure that the cutting results are consistent with expectations. This real-time monitoring and feedback control mechanism enables the controller 23 to make instant corrections to any minor movement deviations, thereby maintaining the accuracy and consistency of the cutting path.

[0059] In addition, the movement data provided by the sensor 25 enables the controller 23 and the first driver 24 to form a closed-loop control system. In this closed-loop control system, the controller 23 continuously receives feedback information from the sensor 25, and adjusts the output of the first driver 243 according to the difference between the actual movement and the preset movement, so that the movement of the bobbin 21 always conforms to the predetermined trajectory, and finally a product that meets the expected requirements can be obtained.

[0060] In order to ensure the smoothness and consistency of the movement of the cutting line segment array in the moving direction, in some embodiments of the present disclosure, the controller 23 is configured to control the two reels 21 to move synchronously in the moving direction.

[0061] By making the two spools move synchronously during the cutting process, the cutting line can be prevented from being subjected to uneven tension or relaxation. The synchronous control of the two spools 21 by the controller 23 keeps the tension of the cutting line stable at all times, avoiding jitter or deviation of the cutting line segment during movement. This synchronous control can effectively reduce the path deviation and precision reduction caused by the change of the cutting line tension during the cutting process, and ensure the stability and consistency of the cutting quality.

[0062] Figure 7 Schematic diagrams of wire cutting devices 2 provided by other embodiments of the present disclosure are shown. In this embodiment, the wire cutting device 2 also includes two guide wheels 21A for guiding the cutting wire 22. In order to avoid unnecessary friction between the cutting wire and the spool, a first driver 24 can also be provided for the guide wheel 21A, and these first drivers 24 are also connected to the controller 23. The controller 23 can control the two spools 21 and the two guide wheels 21A to move synchronously to avoid changes in the relative position of the guide wheel 21A and the spool 21 causing changes in the tension of the cutting wire.

[0063] In some embodiments of the present disclosure, see Figure 8 The wire cutting device 2 may further include an injector 26 for supplying cutting fluid to the cutting wire segment array. The controller 23 may be configured to control the injector 26 to move synchronously with the cutting wire segment array in the moving direction.

[0064] like Figure 8As shown, the injector 26 can be disposed above the cutting line segment array and can be arranged to extend along the arrangement direction of the cutting line segment array. The injector 26 can spray cutting fluid to the cutting line segment array located below it for cutting operation. When the cutting line segment array moves, its position relative to the injector 26 will change. This may cause the cutting fluid to be unable to be supplied to all the cutting line segment arrays, affecting the cutting efficiency. To this end, by making the injector 26 move synchronously with the movement of the cutting line segment array, it can be ensured that the cutting fluid covers the cutting area, so that it is always accurately supplied to the cutting point, ensuring the stable progress of the cutting operation.

[0065] In some embodiments of the present disclosure, the first driver 24 may be a cylinder, and the cylinder is connected to the spool 24 .

[0066] The cylinder is used as a driving device, which uses the force of compressed air to generate smooth linear motion, thereby driving the connected spool 21 to move. Compared with other types of drivers, the driving characteristics of the cylinder make the movement process smoother and more controllable, reducing the vibration and offset caused by unstable driving force. Accordingly, the spool can achieve smooth movement under the drive of the cylinder, so that the cutting line segment array maintains a stable path during the cutting process, avoiding the error caused by the unstable movement of the cutting line.

[0067] In addition, the cylinder drive also has the characteristics of fast response, and can quickly adjust the position and speed according to the instructions of the controller. This fast response feature enables the wire cutting equipment to make real-time adjustments during the cutting process, ensuring that the movement of the cutting wire axis is always consistent with the predetermined trajectory.

[0068] According to some embodiments of the present disclosure, when the first driver 24 is a cylinder, the cutting line segment array can move in the moving direction at certain intervals.

[0069] The cutting line segment array moves in the moving direction at a certain interval, which means that the cutting line segment array can move synchronously with the cylinder-driven wire shaft 21 at a certain step distance or interval. For example, the cutting line segment array can move at an interval of 1 mm. This makes the movement of the cutting line segment array smoother and more uniform, so that the cutting trajectory correction or adjustment of the cutting line segment array can be performed in a stable manner.

[0070] In some embodiments of the present disclosure, see Fig. 9 and Fig.10 The wire cutting device 2 may further include a supporting component 27 for supporting the SiC ingot 200 , and the controller 23 is further configured to control the supporting component 27 to drive the SiC ingot 200 to swing in a plane perpendicular to the central axis of the SiC ingot 200 during the cutting process of the SiC ingot 200 .

[0071] like Fig. 9 and Fig.10 As shown, the SiC ingot 200 can be disposed on the lower surface of the supporting assembly 27. In this embodiment, the supporting surface 27 can not only drive the SiC ingot 200 to move in the feeding direction, but also drive the SiC ingot 200 to move in a plane perpendicular to the central axis of the SiC ingot 200. Fig.10 Swing in the direction indicated by the arrow.

[0072] During the cutting process, due to the swing of the SiC ingot 200, the contact surface between the cutting line segment and the SiC ingot 200 is constantly changing. This swinging motion helps to evenly distribute the cutting stress and avoid a single position from being subjected to excessive stress for a long time, thereby reducing the risk of local deformation or cracks. Moreover, by controlling the swing amplitude and frequency, the wire cutting device 2 can adjust the stress state of the SiC ingot 200 according to the cutting requirements to ensure the stability and uniformity of the stress during the cutting process. The uniform stress makes the movement of the cutting line segment smoother, reduces deviations and errors, and ensures that the cutting results are more accurate and consistent.

[0073] It should also be pointed out that during the cutting process of high-hardness materials such as SiC ingots, the large amount of heat generated by friction may cause local overheating and deformation of the ingot. By swinging the ingot in a plane perpendicular to the central axis, the contact point of the cutting line segment changes continuously, which helps to disperse the heat and prevent overheating in local areas. Swinging can also speed up the dissipation of heat, so that the heat generated during the cutting process is distributed over a larger range, reducing the risk of thermal deformation of the SiC ingot. By effectively controlling the temperature and stress state, the smooth progress of the cutting process is ensured, and the cutting efficiency and stability are improved.

[0074] Some embodiments of the present disclosure further provide a wire cutting method, which is performed by the wire cutting device 2 described above.

[0075] It should be noted that the technical solutions described in the present disclosure can be combined arbitrarily without conflict.

[0076] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A wire cutting device, characterized in that: The wire cutting equipment comprises: At least two spools of thread; A cutting wire wound on the at least two spools to form a cutting wire segment array for cutting the SiC ingot; A controller is configured to control the wire shaft to drive the cutting wire segment array to reciprocate in a moving direction parallel to the axial direction of the SiC ingot during the cutting process of the SiC ingot.

2. The wire cutting device according to claim 1, characterized in that: The wire cutting device further comprises a first driver for driving the wire shaft to move in the moving direction, and the controller drives the wire shaft to drive the cutting wire segment array to reciprocate in the moving direction by controlling the first driver.

3. The wire cutting device according to claim 2, characterized in that: The controller is configured to control the first driver to drive the wire axis so that the cutting wire segment array moves toward the C-plane of the SiC ingot before cutting to the radial center of the SiC ingot and moves toward the Si-plane of the SiC ingot after passing the radial center.

4. The wire cutting device according to claim 2, characterized in that: The wire cutting device further includes a sensor for sensing a movement amount of the wire shaft in the movement direction, wherein the controller is configured to control the first driver to drive the wire shaft according to the movement amount sensed by the sensor.

5. The wire cutting device according to any one of claims 1 to 4, characterized in that: The controller is configured to control the at least two bobbins to move synchronously in the moving direction.

6. The wire cutting device according to any one of claims 1 to 4, characterized in that: The wire cutting device further comprises an ejector for supplying cutting fluid to the cutting wire segment array, and the controller is configured to control the ejector to move synchronously with the cutting wire segment array in the moving direction.

7. The wire cutting device according to claim 2, characterized in that: The first driver is a cylinder connected to the bobbin.

8. The wire cutting device according to claim 7, characterized in that: The cutting line segment array moves in the moving direction at certain intervals.

9. The wire cutting device according to any one of claims 1 to 4, characterized in that: The wire cutting device also includes a supporting component for supporting the SiC ingot, and the controller is further configured to control the supporting component to drive the SiC ingot to swing in a plane perpendicular to the central axis of the SiC ingot during the cutting process of the SiC ingot.

10. A wire cutting method, characterized in that: The wire cutting method is performed by the wire cutting apparatus according to any one of claims 1 to 9.

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