Semiconductor process chamber and semiconductor process equipment

Abstract

The invention provides a semiconductor process chamber and semiconductor process equipment. The semiconductor process chamber comprises: a cavity provided with an extraction opening communicated with the inside; the base is arranged in the cavity; the first gas adjusting assembly is arranged in the cavity and divides the interior of the cavity into a process cavity and a ventilation cavity, and the base is located in the process cavity; the ventilation cavity is positioned below the base and is communicated with the extraction opening; the second gas adjusting assembly comprises an adjusting part arranged in the ventilation cavity; wherein the first gas adjusting assembly is provided with a gas inlet surface facing the bottom of the base, and a plurality of gas inlet through holes for communicating the process cavity with the ventilation cavity are distributed in the gas inlet surface of the first gas adjusting assembly; the adjusting part is located below the air inlet face, the multiple air inlet through holes are located in the orthographic projection of the adjusting part on the plane where the air inlet face is located, and the adjusting part is used for adjusting the flow of air flowing into the ventilation cavity through the multiple air inlet through holes. And the plurality of gas inlet through holes can adjust gas entering the ventilation cavity, so that the gas in the process cavity is uniformly distributed.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor process chamber and semiconductor process equipment. Background Art

[0002] Physical vapor deposition (PVD) is the most widely used thin film manufacturing technology in the semiconductor field. It generally refers to the thin film deposition process that uses physical methods to prepare thin films. The typical physical vapor deposition chamber structure mainly includes the chamber body, sputtering target, a base for receiving and processing wafers, an air inlet path, an exhaust device, etc. The physical vapor deposition process has relatively strict requirements on the vacuum degree of the process chamber. Under normal circumstances, the process chamber must reach 10 -8 To achieve this goal, a cryo-pump or a turbo-pump is usually used.

[0003] When the cold pump or molecular pump is biased, the process gas and the plasma generated during the sputtering process will be unevenly distributed in the process chamber, which will affect the process uniformity of the film. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process chamber to achieve the technical effect of uniform gas distribution in the process chamber.

[0005] In order to achieve the purpose of the present invention, a semiconductor process chamber is provided, comprising: a cavity, provided with an exhaust port connected to the interior; a base, arranged in the cavity, for carrying a wafer; a first gas regulating component, arranged in the cavity, and dividing the interior of the cavity into a process chamber and a ventilation chamber, and the base is located in the process chamber; the ventilation chamber is located below the base and is connected to the exhaust port; a second gas regulating component, comprising a regulating member arranged in the ventilation chamber; wherein the first gas regulating component has an air inlet surface facing the bottom of the base, and the first gas regulating component is provided with a plurality of air inlet holes connecting the process chamber with the ventilation chamber on the air inlet surface; the regulating member is located below the air inlet surface, and the plurality of air inlet holes are located within the orthographic projection of the regulating member on the plane where the air inlet surface is located, and the regulating member is used to regulate the flow rate of gas flowing into the ventilation chamber through the plurality of air inlet holes.

[0006] Furthermore, the air intake surface is divided into a plurality of air intake areas, a plurality of air intake holes are distributed in each air intake area, and the gas flow rates flowing into the ventilation cavity from the plurality of air intake holes in different air intake areas are different.

[0007] Further, the multiple air intake areas include a first air intake area close to the air exhaust port and a second air intake area arranged on a side of the first air intake area away from the air exhaust port; wherein, the gas flow rate flowing into the ventilation cavity from the multiple air intake holes in the first air intake area is smaller than the gas flow rate flowing into the ventilation cavity from the multiple air intake holes in the second air intake area.

[0008] Furthermore, the distribution density of the plurality of air intake holes in different air intake regions is the same; wherein the aperture of the air intake holes distributed in the first air intake region is smaller than the aperture of the air intake holes distributed in the second air intake region.

[0009] Further, the apertures of the multiple air intake holes distributed in different air intake regions are the same; wherein the number of the multiple air intake holes distributed in the first air intake region is less than the number of the multiple air intake holes distributed in the second air intake region.

[0010] Furthermore, the base includes a main body for carrying the wafer and a lifting assembly for driving the main body to rise and fall, and the lifting assembly includes a lifting column arranged along the lifting direction of the main body; the first gas regulating assembly is arranged below the main body.

[0011] Furthermore, the first gas regulating assembly includes an inner wall arranged around the lifting column and an outer wall arranged on a side of the inner wall away from the lifting column.

[0012] Furthermore, the air inlet surface has a mounting hole for the lifting column to pass through; the air inlet surface is an annular surface.

[0013] Furthermore, the second gas regulating component also includes: a driving member connected to the regulating member, and the driving member is used to drive the regulating member to rise and fall so as to adjust the distance between the regulating member and the air inlet surface.

[0014] Furthermore, the adjusting member is provided with a plurality of adjusting holes passing therethrough, and the aperture and distribution density of the plurality of adjusting holes are the same as those of the plurality of air intake holes; the second gas adjusting component also includes: a driving member connected to the adjusting member, and the driving member is used to drive the adjusting member to rotate so as to adjust the overlapping area of ​​the adjusting holes and the air intake holes on the projection surface.

[0015] The present invention also provides a semiconductor process equipment, comprising the above-mentioned semiconductor process chamber.

[0016] The present invention has the following beneficial effects:

[0017] The semiconductor process chamber of this embodiment is provided with a first gas regulating component and a second gas regulating component in the chamber. The first gas regulating component divides the chamber into a connected process chamber and a ventilation chamber, so that the gas in the process chamber first flows to the ventilation chamber through a plurality of air inlet holes and then flows to the exhaust port. The plurality of air inlet holes can regulate the gas entering the ventilation chamber so that the gas in the process chamber is evenly distributed. The second gas regulating component is used to adjust the flow rate of the gas flowing into the ventilation chamber through the plurality of air inlet holes through a regulating member arranged below the air inlet surface, and further adjust the distribution of the gas in the process chamber.

[0018] Other objects and features of the present invention will become apparent by reading the specification, claims and drawings of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0020] Figure 1 It is a structural schematic diagram of a semiconductor process chamber in the related art.

[0021] Figure 2 It is a structural schematic diagram of a semiconductor process chamber according to an embodiment of the present invention.

[0022] Figure 3 It is a structural schematic diagram of a semiconductor process chamber according to an embodiment of the present invention.

[0023] Figure 4 It is a structural schematic diagram of a first gas regulating component of a semiconductor process chamber according to an embodiment of the present invention.

[0024] Figure 5 is a structural schematic diagram of a second gas regulating assembly of a semiconductor process chamber according to an embodiment of the present invention.

[0025] Figure 6 The graph is a graph showing the effect of the distance between the regulating member and the gas inlet surface of the second gas regulating assembly of the semiconductor process chamber according to the embodiment of the present invention on the uniformity of the deposited thin film on the wafer.

[0026] Description of main component symbols:

[0027] 1. Cavity; 2. Base; 3. Air extraction device;

[0028] 10. Semiconductor process chamber;

[0029] 100, cavity; 110, air extraction port; 120, process cavity; 130, ventilation cavity;

[0030] 200, base; 210, main body; 220, lifting assembly; 221, lifting column;

[0031] 300, first gas regulating assembly; 310, air inlet surface; 311, air inlet through hole; 3111, first air inlet through hole; 3112, second air inlet through hole; 312, mounting hole; 320, blocking surface;

[0032] 400, second gas regulating assembly; 410, regulating member; 420, driving member; 421, mounting plate; 422, sealing member; 423, connecting rod;

[0033] 500, air extraction device;

[0034] 600. Target material; 700. Shielding lining. DETAILED DESCRIPTION

[0035] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0036] Figure 1 Schematic diagram of the structure of a semiconductor process chamber in the related art. Figure 1 The semiconductor process chamber in the related art includes a cavity 1, a base 2 for receiving a wafer is arranged at the central position of the cavity 1, and a lifting component capable of driving the base 2 to rise and fall in the cavity 1 is arranged below the base 2. A vacuum device 3 is arranged on the outside of the cavity 1, and the vacuum device 3 may include a cold pump or a molecular pump. The cavity 1 is provided with a vacuum port, so that the gas in the cavity 1 can flow to the vacuum device 3 through the vacuum port. The vacuum device 3 is offset, and the vacuum port is arranged at a non-central position of the cavity 1 (such as the bottom wall or side wall of the cavity 1). The offset vacuum device 3 will cause the process gas and the plasma generated during the sputtering process to be unevenly distributed in the cavity 1, and the concentration on the side close to the vacuum port of the cold pump or molecular pump is often lower, and the concentration on the side away from the vacuum port of the cold pump or molecular pump is often higher, resulting in poor process uniformity.

[0037] How to achieve symmetrical and uniform distribution of process gas and plasma concentration in a vacuum chamber without affecting the reception and transmission of wafers has become an urgent problem to be solved. In order to solve the above problem, the present invention provides a semiconductor process chamber 10, which can significantly improve process uniformity without affecting the reception and automatic transmission of wafers.

[0038] Figure 2 1 is a schematic structural diagram of a semiconductor process chamber 10 according to an embodiment of the present invention. Figure 2The semiconductor process chamber 10 includes a chamber 100, a pedestal 200, a first gas regulating assembly 300 and a second gas regulating assembly 400. The chamber 100 is provided with a gas extraction port 110 communicating with the interior. The pedestal 200 is disposed in the chamber 100. The pedestal 200 is used to carry a wafer.

[0039] The first gas regulating assembly 300 is disposed in the chamber 100. The first gas regulating assembly 300 divides the interior of the chamber 100 into a process chamber 120 and a vent chamber 130. The base 200 is located in the process chamber 120 to perform corresponding process treatments on the wafer in the process chamber 120. The vent chamber 130 is located below the base 200, and the vent chamber 130 is connected to the gas extraction port 110, and the gas in the process chamber 120 can be redistributed through the vent chamber 130.

[0040] Figure 4 FIG. 1 is a schematic structural diagram of a first gas regulating assembly 300 of a semiconductor process chamber 10 according to an embodiment of the present invention. Figure 4 The first gas regulating assembly 300 has an inlet surface 310 facing the bottom of the base 200. The first gas regulating assembly 300 has a plurality of inlet holes 311 on the inlet surface 310 for connecting the process chamber 120 with the ventilation chamber 130. The plurality of inlet holes 311 are used to make the gas in the process chamber 120 evenly distributed.

[0041] Figure 5 FIG. 4 is a schematic structural diagram of a second gas regulating assembly 400 of a semiconductor process chamber 10 according to an embodiment of the present invention. Figure 2 , Figure 3 and Figure 5 The second gas regulating assembly 400 can be fixedly connected to the inner wall of the cavity 100, for example, by fixing screws or welding. The second gas regulating assembly 400 includes a regulating member 410. The second gas regulating assembly 400 is used to regulate the flow of gas flowing into the ventilation cavity 130 through the plurality of air inlet holes 311 through the regulating member 410.

[0042] The adjusting member 410 is disposed in the ventilation cavity 130. The adjusting member 410 is located below the air inlet surface 310. The plurality of air inlet holes 311 are located within the orthographic projection of the adjusting member 410 on the plane where the air inlet surface 310 is located. The adjusting member 410 is used to adjust the flow rate of the gas flowing into the ventilation cavity 130 through the plurality of air inlet holes 311.

[0043] It should be noted that the semiconductor process chamber 10 may further include a target material 600 and a shielding liner 700 disposed above the base 200 .

[0044] In some embodiments, the chamber 100 is further provided with an air inlet, which may be located at the center of the top wall of the chamber 100 and arranged opposite to the wafer to provide gas to the wafer so that a thin film can be deposited on the upper surface of the wafer.

[0045] It is understandable that the gas extraction port 110 may be located at a non-central position such as the bottom wall or side wall of the chamber 100. Since the gas in the chamber 100 does not flow directly from the process chamber 120 to the gas extraction port 110, but flows through the process chamber 120, the ventilation chamber 130 and the gas extraction port 110 in sequence, the multiple air inlet holes 311 can adjust the gas entering the ventilation chamber 130, and even when the gas extraction port 110 is offset, the gas in the process chamber 120 can be evenly distributed.

[0046] In the semiconductor process chamber 10 of the present embodiment, a first gas regulating assembly 300 is disposed in the chamber body 100 to divide the chamber body 100 into a process chamber 120 and a vent chamber 130 that are connected, so that the gas in the process chamber 120 first flows to the vent chamber 130 through a plurality of gas inlet holes 311 and then flows to the gas extraction port 110. The plurality of gas inlet holes 311 can regulate the gas entering the vent chamber 130 so that the gas in the process chamber 120 is evenly distributed.

[0047] The air intake surface 310 is divided into a plurality of air intake areas. A plurality of air intake holes 311 are distributed in each air intake area. The gas flow rates flowing into the ventilation cavity 130 from the plurality of air intake holes 311 in different air intake areas are different.

[0048] In some embodiments, the plurality of air inlet regions include a first air inlet region and a second air inlet region. The first air inlet region is close to the air inlet 110. The second air inlet region is disposed on a side of the first air inlet region away from the air inlet 110. The gas flow rate flowing from the plurality of air inlet holes 311 in the first air inlet region into the ventilation cavity 130 is less than the gas flow rate flowing from the plurality of air inlet holes 311 in the second air inlet region into the ventilation cavity 130.

[0049] In this embodiment, the gas flow rate flowing into the ventilation cavity 130 from the multiple air inlet holes 311 in the first air inlet area is smaller than the gas flow rate flowing into the ventilation cavity 130 from the multiple air inlet holes 311 in the second air inlet area, so as to increase the gas concentration in the area corresponding to the first air inlet area in the process chamber 120, and reduce the gas concentration in the area corresponding to the second air inlet area in the process chamber 120, and finally make the gas distribution in the process chamber 120 uniform.

[0050] In order to achieve that the gas flow rate flowing from the plurality of air intake through holes 311 in the first air intake region into the ventilation cavity 130 is smaller than the gas flow rate flowing from the plurality of air intake through holes 311 in the second air intake region into the ventilation cavity 130 , two different embodiments are provided.

[0051] Example 1

[0052] The distribution density of the plurality of air intake holes 311 in different air intake regions is the same. The aperture of the air intake holes 311 distributed in the first air intake region is smaller than the aperture of the air intake holes 311 distributed in the second air intake region.

[0053] In some embodiments, multiple air inlet holes 311 with the same aperture are distributed in the first air inlet region, and multiple air inlet holes 311 with the same aperture are distributed in the second air inlet region. Of course, the apertures of the multiple air inlet holes 311 in the first air inlet region or the second air inlet region may be different, for example, the apertures gradually increase or decrease along any direction, as long as the gas flow rate of the multiple air inlet holes 311 in the first air inlet region flowing into the ventilation cavity 130 is less than the gas flow rate of the multiple air inlet holes 311 in the second air inlet region flowing into the ventilation cavity 130, and no specific limitation is made here.

[0054] Example 2

[0055] The apertures of the multiple air intake through holes 311 distributed in different air intake regions are the same. The number of the multiple air intake through holes 311 distributed in the first air intake region is less than the number of the multiple air intake through holes 311 distributed in the second air intake region. In other words, the distribution density of the multiple air intake through holes 311 in the first air intake region is sparser than the distribution density of the multiple air intake through holes 311 in the second air intake region.

[0056] For details, see Figure 4 The plurality of air inlet holes 311 include a plurality of first air inlet holes 3111 and a plurality of second air inlet holes 3112. The plurality of first air inlet holes 3111 are distributed in the first air inlet region, and the plurality of second air inlet holes 3112 are distributed in the second air inlet region. In Embodiment 2, the number of the first air inlet holes 3111 is less than the number of the second air inlet holes 3112, so that the flow rate of the gas entering the ventilation cavity 130 from the first air inlet region is less than the flow rate of the gas entering the ventilation cavity 130 from the second air inlet region.

[0057] Figure 3 1 is a schematic structural diagram of a semiconductor process chamber 10 according to an embodiment of the present invention. Figure 3 The base 200 includes a main body 210 and a lifting assembly 220. The main body 210 is used to carry the wafer. The lifting assembly 220 is used to drive the main body 210 to rise and fall. The lifting assembly 220 includes a lifting column 221 arranged along the lifting direction of the main body 210.

[0058] It should be noted that the main body 210 includes a bearing surface for bearing wafers. The lifting assembly 220 can also drive the main body 210 to rotate. The lifting column 221 penetrates the bottom wall of the cavity 100 and extends out of the cavity 100.

[0059] In some embodiments, the first gas regulating assembly 300 is disposed below the main body 210 to avoid affecting the lifting and lowering of the main body 210 and the transfer of the wafer.

[0060] The first gas regulating assembly comprises an inner wall and an outer wall. The inner wall is arranged around the lifting column. The outer wall is arranged on a side of the inner wall away from the lifting column.

[0061] In some embodiments, the air inlet surface 310 has a mounting hole 312 for the lifting column 221 to pass through. A plurality of air inlet through holes 311 disposed on the air inlet surface 310 are disposed around the mounting hole 312 .

[0062] In some embodiments, the inlet surface 310 is an annular surface.

[0063] The first gas regulating assembly 300 further includes a blocking surface 320 connected to the gas inlet surface 310 and located at the same horizontal plane. The blocking surface 320 is arranged opposite to the gas extraction port 110 .

[0064] Example 1

[0065] The second gas regulating assembly 400 includes a regulating member 410 and a driving member 420. The regulating member 410 is disposed in the ventilation cavity 130. The driving member 420 is connected to the regulating member 410, and the driving member 420 is used to drive the regulating member 410 to rise and fall, so as to adjust the distance between the regulating member 410 and the air inlet surface 310.

[0066] Optionally, the driving member 420 may include a motor or a manual adjustment knob.

[0067] In this embodiment, the flow rate of the gas flowing into the ventilation cavity 130 through the multiple air inlet holes 311 is adjusted by adjusting the distance between the adjusting member 410 and the air inlet surface 310. When the driving member 420 drives the adjusting member 410 to rise to reduce the distance between the adjusting member 410 and the air inlet surface 310, the flow rate of the gas flowing into the ventilation cavity 130 through the multiple air inlet holes 311 is reduced; when the driving member 420 drives the adjusting member to descend to increase the distance between the adjusting member 410 and the air inlet surface 310, the flow rate of the gas flowing into the air inlet cavity through the multiple air inlet holes 311 is increased. An optimal distance can be found through a series of process experiments to achieve the best film uniformity.

[0068] Specifically, the process experiment for determining the optimal distance between the adjustment member 410 and the air inlet surface 310 may include the following steps:

[0069] By sequentially changing the distance between the adjusting member 410 and the air inlet surface 310, and then depositing a titanium nitride film on the wafer, and measuring and calculating the thickness uniformity of the series of films, it can be obtained Figure 6 . Figure 6is a curve showing the influence of the distance between the regulating member 410 and the gas inlet surface 310 of the second gas regulating assembly 400 of the semiconductor process chamber 10 according to the embodiment of the present invention on the uniformity of the deposited film on the wafer. Figure 6 It can be seen from the figure that when the distance between the adjusting member 410 and the air inlet surface 310 increases from small to large, the uniformity of the film thickness gradually decreases and then increases, indicating that selecting a suitable distance can optimize the uniformity of the air extraction of the cold pump or molecular pump, thereby obtaining the optimal process uniformity. Figure 6 The distance between the adjusting member 410 and the air inlet surface 310 will affect the uniformity of the thin film deposited on the wafer. When the distance between the adjusting member 410 and the air inlet surface 310 is 4.5 mm, the uniformity of the thin film is the best.

[0070] Example 2

[0071] The second gas regulating assembly 400 includes a regulating member 410 and a driving member 420. The regulating member 410 is disposed in the ventilation cavity 130. The regulating member 410 is provided with a plurality of regulating through holes running therethrough. The apertures and distribution densities of the plurality of regulating through holes and the plurality of air inlet through holes 311 are the same.

[0072] The driving member 420 is connected to the adjusting member 410. The driving member 420 is used to drive the adjusting member 410 to rotate so as to adjust the overlapping area of ​​the adjusting through hole and the air inlet through hole 311 on the projection surface.

[0073] In this embodiment, the flow rate of the gas flowing into the ventilation cavity 130 through the plurality of air inlet holes 311 is adjusted by adjusting the overlapping area of ​​the adjustment holes and the air inlet holes 311 on the projection surface.

[0074] It should be noted that, in the above two embodiments, the driving member 420 may include a mounting plate 421, a sealing member 422 and a connecting rod 423. The connecting rod 423 is connected to the adjusting member 410 to drive the adjusting member 410 to move. The mounting plate 421 is fixedly connected to the inner wall surface of the cavity 100, and the sealing member 422 is disposed between the adjusting member 410 and the mounting plate 421 to seal the ventilation cavity 130.

[0075] It is understandable that the shape of the regulating member 410 is adapted to the shape of the air inlet surface 310, and the regulating member 410 is located directly below the air inlet surface 310, so as to adjust the flow rate of the gas flowing into the ventilation cavity 130 through the plurality of air inlet holes 311. In other words, the second gas regulating assembly 400 can adjust the air extraction capacity of the air extraction device 500.

[0076] Optionally, the sealing member 422 may be a bellows.

[0077] This embodiment further provides a semiconductor process equipment, which includes the semiconductor process chamber 10 of the above embodiment.

[0078] In the description of the present invention, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0079] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0080] In the description of the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0081] In the description of this specification, the description with reference to the terms "one embodiment", "certain embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0082] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor process chamber, characterized in that: include: The cavity is provided with an air extraction port communicating with the interior; A base, disposed in the cavity, for supporting the wafer; A first gas regulating assembly is disposed in the chamber and divides the interior of the chamber into a process chamber and a ventilation chamber, wherein the base is located in the process chamber; The ventilation cavity is located below the base and is connected to the air extraction port; a second gas regulating assembly, comprising a regulating member disposed in the vent cavity; Wherein, the first gas regulating component has an air inlet surface facing the bottom of the base, and the first gas regulating component has a plurality of air inlet holes distributed on the air inlet surface for connecting the process chamber with the ventilation chamber; The regulating member is located below the air inlet surface, and the plurality of air inlet holes are located within the orthographic projection of the regulating member on the plane where the air inlet surface is located. The regulating member is used to regulate the flow of gas flowing into the ventilation cavity through the plurality of air inlet holes.

2. The semiconductor process chamber according to claim 1, characterized in that: The air intake surface is divided into a plurality of air intake areas, each of the air intake areas is provided with a plurality of the air intake holes, and the gas flow rates flowing into the ventilation cavity from the plurality of the air intake holes in different air intake areas are different.

3. The semiconductor process chamber according to claim 2, characterized in that: The plurality of air intake areas include a first air intake area close to the air extraction port and a second air intake area arranged on a side of the first air intake area away from the air extraction port; Wherein, a gas flow rate flowing into the ventilation cavity from the plurality of the air intake through holes in the first air intake region is smaller than a gas flow rate flowing into the ventilation cavity from the plurality of the air intake through holes in the second air intake region.

4. The semiconductor process chamber according to claim 3, characterized in that: The distribution density of the plurality of air intake holes in different air intake areas is the same; The apertures of the air intake holes distributed in the first air intake region are smaller than the apertures of the air intake holes distributed in the second air intake region.

5. The semiconductor process chamber according to claim 3, characterized in that: The apertures of the plurality of air intake holes distributed in different air intake areas are the same; The number of the plurality of air intake holes distributed in the first air intake region is less than the number of the plurality of air intake holes distributed in the second air intake region.

6. The semiconductor process chamber according to any one of claims 1 to 5, characterized in that: The base includes a main body for carrying the wafer and a lifting assembly for driving the main body to rise and fall, and the lifting assembly includes a lifting column arranged along the lifting direction of the main body; The first gas regulating assembly is disposed below the main body.

7. The semiconductor process chamber according to claim 6, characterized in that: The first gas regulating assembly includes an inner wall disposed around the lifting column and an outer wall disposed on a side of the inner wall away from the lifting column.

8. The semiconductor process chamber according to claim 6, characterized in that: The air inlet surface has a mounting hole for the lifting column to pass through; The air inlet surface is an annular surface.

9. The semiconductor process chamber according to claim 1, wherein: The second gas regulating assembly further comprises: A driving member is connected to the adjusting member, and is used to drive the adjusting member to rise and fall so as to adjust the distance between the adjusting member and the air inlet surface.

10. The semiconductor process chamber according to claim 1, wherein: The regulating member is provided with a plurality of regulating through holes therethrough, and the apertures and distribution densities of the plurality of regulating through holes are the same as those of the plurality of air inlet through holes; the second gas regulating assembly further comprises: A driving member is connected to the adjusting member, and is used to drive the adjusting member to rotate so as to adjust the overlapping area between the adjusting through hole and the air inlet through hole on the projection surface.

11. A semiconductor process equipment, characterized in that: Comprising the semiconductor process chamber according to any one of claims 1 to 10.

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