Graphite boat and method for improving quality of liquid phase epitaxial film

Abstract

The invention relates to the field of epitaxial growth of thin film materials, in particular to a graphite boat and method for improving the quality of a liquid phase epitaxial thin film, the graphite boat comprises a bottom support, a sliding strip, a mother liquor tank and a sliding upper cover, the bottom support is of a surrounding structure and is used for supporting the sliding strip, the mother liquor tank and the sliding upper cover; the sliding strip is positioned in the bottom support and is used for loading a substrate; the mother liquor tank is positioned above the sliding strip, is positioned in the bottom support and is fixed with the bottom support; and the sliding upper cover is positioned above the mother liquor tank, is positioned in the bottom support and is used for sealing. The tellurium-cadmium-mercury thin film which is bright in surface and free of macroscopic ripples is prepared, the difficulty of a subsequent device process can be effectively reduced, a series of problems of interconnection failure, shading and the like caused by poor thickness uniformity are solved, and great contribution is made to improvement of device performance.

Description

Technical Field

[0001] The present application relates to the field of epitaxial growth of thin film materials, and in particular to a graphite boat and a method for improving the quality of liquid phase epitaxial thin films. Background Art

[0002] Mercury cadmium telluride material is an important infrared photosensitivity material. Its bandgap width can be adjusted by changing the cadmium component so that its detection range can cover all infrared bands.

[0003] As a common material for preparing high-performance infrared focal plane detectors, the growth and preparation methods of mercury cadmium telluride mainly include molecular beam epitaxy (MBE), metal organic vapor phase epitaxy (MOVPE) and liquid phase epitaxy (LPE). Compared with other growth technologies, liquid phase epitaxy technology of mercury cadmium telluride materials has significant advantages in terms of photoresponse performance, preparation cost, and growth of doped materials. It is currently the most mature method for batch preparation of mercury cadmium telluride thin film materials. According to different growth methods, liquid phase epitaxy can be divided into vertical immersion liquid phase epitaxy, tilting boat liquid phase epitaxy, and horizontal push boat liquid phase epitaxy. Among them, horizontal push boat liquid phase epitaxy is widely used because of its advantages such as simple growth equipment and low preparation cost. However, when used in this method, on the one hand, the mother liquid is easily affected by the mercury pressure convection of mercury telluride used for mercury compensation during the growth process; on the other hand, after the growth is completed and the cooling process is completed, the high thermal environment causes the problem of atoms on the surface of the epitaxial film to diffuse outward.

[0004] In view of this, how to provide a method that can not only ensure the stability of the composition of the growth mother solution before epitaxial growth, but also avoid the adverse effects of mercury convection on the growth mother solution during the epitaxial growth process, and at the same time, supplement mercury and tellurium to the mercury cadmium telluride material after the epitaxial growth to improve the quality of the epitaxial material has become a technical problem that needs to be solved urgently. Summary of the invention

[0005] The embodiments of the present application provide a graphite boat for improving the quality of liquid phase epitaxial thin films and a method for improving the quality of liquid phase epitaxial thin films, which are used to solve the problem that the mother liquid is easily affected by the mercury pressure convection of mercury telluride used for mercury compensation during the growth process, and the high thermal environment during the cooling process after the growth is completed causes the atoms on the surface of the epitaxial film to diffuse outward.

[0006] In a first aspect of an embodiment of the present application, a graphite boat for improving the quality of liquid phase epitaxial thin films is provided, comprising a bottom support, a slide bar, a mother liquid tank and a sliding upper cover, wherein:

[0007] The bottom bracket is a surrounding structure used to support the slide bar, the mother liquid tank and the sliding upper cover;

[0008] The slide bar is located in the bottom bracket and is used for loading the substrate;

[0009] The mother liquid tank is located above the slide bar and is located in the bottom bracket and fixed to the bottom bracket, wherein the mother liquid tank is provided with a mother liquid channel and a supply tank, the mother liquid channel is used to place the growth mother liquid, and the supply tank is used to place the mercury telluride;

[0010] The sliding upper cover is located above the mother liquid tank and inside the bottom support for sealing.

[0011] In an optional embodiment, a slide bar pull rod groove is provided at one end of the slide bar, wherein the slide bar pull rod groove is used to drive the slide bar to slide left and right in the base under the drive of a motor.

[0012] In an optional embodiment, a substrate slot is provided on the slide bar, and a pad is provided in the substrate slot, wherein the substrate slot is used to load the substrate, and the pad is used to adjust the height of the substrate.

[0013] In an optional embodiment, the supply tank is arranged adjacent to the mother liquid channel, wherein a supply tank channel is arranged at the other end of the supply tank, wherein the supply tank channel passes through the mother liquid tank.

[0014] In an optional embodiment, the sliding upper cover is provided with a connecting channel.

[0015] In an optional embodiment, an upper cover pull rod groove is provided at one end of the sliding upper cover, wherein the upper cover pull rod groove is used to drive the sliding upper cover to slide under the drive of a motor.

[0016] In a second aspect of an embodiment of the present application, a method for growing a graphite boat for improving the quality of a liquid phase epitaxial thin film is provided, comprising:

[0017] Starting a horizontal liquid phase epitaxy system, controlling the liquid phase epitaxy system to start heating, and after the growth mother liquid is heated and melted and reaches a preset temperature, controlling the liquid phase epitaxial growth system to start cooling at a set rate;

[0018] After the temperature of the liquid phase epitaxy system is cooled to the set growth temperature, the pull rod is controlled to drive the slide bar and the sliding upper cover to move so that the substrate is directly below the growth mother liquid channel, and the supercooling is used as the crystallization driving force to start the epitaxial growth;

[0019] After the mercury cadmium telluride film reaches a suitable thickness, the pull rod is controlled to drive the slide bar and the sliding upper cover to move, so that the epitaxial film is separated from the growth mother solution, and the epitaxial growth ends;

[0020] The liquid phase epitaxial system is controlled to start cooling down, and mercury and tellurium are supplemented to the epitaxial material through the mercury telluride in the supply tank until the horizontal liquid phase epitaxial system is cooled to room temperature, thereby completing the epitaxial growth process.

[0021] The present application provides a graphite boat for improving the quality of liquid phase epitaxial thin films, comprising a bottom support, a slide bar, a mother liquid tank and a sliding upper cover, wherein the bottom support is a surrounding structure for supporting the slide bar, the mother liquid tank and the sliding upper cover; the slide bar is located in the bottom support and is used for loading a substrate; the mother liquid tank is located above the slide bar and in the bottom support and is fixed to the bottom support; the sliding upper cover is located above the mother liquid tank and in the bottom support and is used for sealing.

[0022] By using the graphite boat for improving the quality of liquid phase epitaxial film provided in the embodiment of the present application, mercury pressure compensation can be performed through mercury telluride in the supply tank before epitaxial growth, effectively maintaining the stability of the growth mother liquid components. At the same time, during the epitaxial growth process, the convection effect above the mother liquid is reduced by the physical isolation of the supply tank and the mother liquid pores, thereby improving the uniformity of the mother liquid temperature field, and finally improving the uniformity of the components and thickness of the epitaxial material. In addition, after the epitaxial growth is completed, the epitaxial material can be compensated for mercury and tellurium to improve the quality of the epitaxial material. The present invention can prepare a mercury cadmium telluride film with a bright surface and no macroscopic ripples, which can effectively reduce the difficulty of subsequent device processes, solve a series of problems such as interconnection failure and shading caused by poor thickness uniformity, and make a great contribution to the improvement of device performance.

[0023] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, which can be implemented in accordance with the contents of the specification, and in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present application. Also, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0025] Figure 1 A first structural schematic diagram of a graphite boat for improving the quality of liquid phase epitaxial thin films provided in an embodiment of the present application;

[0026] Figure 2 A second structural schematic diagram of a graphite boat for improving the quality of liquid phase epitaxial thin films provided in an embodiment of the present application;

[0027] Figure 3 A third structural schematic diagram of a graphite boat for improving the quality of liquid phase epitaxial thin films provided in an embodiment of the present application;

[0028] Figure 4A fourth structural schematic diagram of a graphite boat for improving the quality of liquid phase epitaxial thin films provided in an embodiment of the present application;

[0029] Figure 5 A fifth structural schematic diagram of a graphite boat for improving the quality of liquid phase epitaxial thin films provided in an embodiment of the present application;

[0030] Figure 6 A sixth structural schematic diagram of a graphite boat for improving the quality of liquid phase epitaxial thin films provided in an embodiment of the present application;

[0031] Figure 7 A schematic flow chart of a method for improving the quality of liquid phase epitaxial thin films using a graphite boat provided in an embodiment of the present application;

[0032] Among them, base - 1;

[0033] Slider—2; substrate slot—201; slider pull rod slot—202;

[0034] Mother liquid tank—3; mother liquid channel—301; supply tank—302; supply tank channel—303;

[0035] Sliding upper cover—4; connecting channel—401; sliding upper cover pull rod slot—402;

[0036] Pad—5; substrate—6; growth mother solution—7; mercury telluride—8; epitaxial film—9; pull rod—10. DETAILED DESCRIPTION

[0037] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0038] When HgCdTe epitaxial films are prepared using the tellurium-rich horizontal push-boat liquid phase epitaxy method, the surface of the liquid phase epitaxial film usually exhibits large macroscopic fluctuations. The macroscopic fluctuations of the HgCdTe epitaxial film will affect the composition uniformity and flatness of the HgCdTe epitaxial film. As HgCdTe focal plane detectors develop towards large arrays, high resolution, and high performance, higher requirements are placed on the composition uniformity and surface flatness of HgCdTe materials. Experimental studies have found that the appearance of macroscopic fluctuations on the film surface is related to the convection effect of the mother liquid melt during epitaxial growth.

[0039] In the liquid phase epitaxial growth process of HgCdTe material, the first step is to heat the HgCdTe mother liquor to make it fully melted, and then slowly cool it down at a certain rate. After the temperature drops to the set temperature, the CdZnTe substrate is driven to contact the growth mother liquor, and the HgCdTe film is crystallized and grown under the drive of supercooling. In this process before the epitaxial growth of HgCdTe film, the saturated vapor pressure of mercury is higher than that of tellurium and cadmium, which causes a relative reduction of mercury in the mother liquor, which is called mother liquor mercury loss. In order to supplement the molten mother liquor with mercury before growth, a slot is usually opened on the front or back side of the mother liquor tank, which is called a supply slot. The supply slot is used to place mercury telluride, and a channel is provided between the supply slot and the mother liquor tank to compensate the growth mother liquor with mercury. The mercury partial pressure of mercury telluride in the supply slot is higher than the mercury partial pressure of the growth mother liquor, so that gaseous mercury can be supplemented to the growth mother liquor to maintain the stability of the mother liquor components. Mercury compensation of the mother liquid before epitaxial growth is an important method to improve epitaxial stability. However, in the subsequent liquid phase epitaxial growth process, the molten growth mother liquid above the substrate will be affected by the mercury pressure convection of mercury telluride, which will cause changes in the temperature field inside the growth mother liquid, causing macroscopic ripples to grow on the surface of the epitaxial material, ultimately affecting the thickness and composition uniformity of the epitaxial material. Therefore, reducing the mercury pressure convection effect during epitaxial growth is of great significance for suppressing the macroscopic fluctuations on the surface of the epitaxial material.

[0040] After the thickness of the HgCdTe film reaches a predetermined value, the HgCdTe film is driven to leave the growth mother solution, and the epitaxial growth is completed. After the epitaxial growth is completed, the entire epitaxial growth system begins to cool down. During the process of cooling the system to room temperature, the epitaxial film is still in the thermal environment of the system for a long time. Since the cadmium partial pressure of the HgCdTe material is much smaller than the tellurium partial pressure and the mercury partial pressure, and the effect of the tellurium loss of the epitaxial film on the surface is greater than the effect of the cadmium loss, it is necessary to consider increasing the supplementary sources of mercury and tellurium to promote the atomic exchange and movement between the HgCdTe film and the gas phase, adjust the mercury vacancy concentration, reduce the tellurium loss, and further improve the surface quality of the HgCdTe material.

[0041] In view of this, in order to further improve the uniformity of liquid phase epitaxial materials and improve the quality of native epitaxial materials, the present invention proposes a graphite boat and a growth method for improving the quality of liquid phase epitaxial thin films. The present invention, through the ingenious design of the graphite boat structure and the growth method, can not only effectively maintain the stability of the growth mother liquid components before epitaxial growth, but also reduce the mercury convection effect during the epitaxial growth process, thereby improving the uniformity of the components and thickness of the epitaxial materials. In addition, after the epitaxial growth is completed, mercury and tellurium can be supplemented to the epitaxial material to improve the quality of the epitaxial material.

[0042] See also Figure 1-Figure 6 , Figure 1-Figure 6 The structure diagram of a graphite boat for improving the quality of liquid phase epitaxial thin films provided in the embodiment of the present application is shown in FIG. Figure 1-Figure 6As shown, the graphite boat for improving the quality of liquid phase epitaxial thin films comprises four parts: a bottom support 1, a slide bar 2, a mother liquid tank 3 and a sliding upper cover 4.

[0043] The bottom support 1 is a surrounding structure for supporting the slide bar 2 , the mother liquid tank 3 and the sliding upper cover 4 .

[0044] The slide bar 2 is located in the base 1 and is used for loading the substrate 6. In addition, a slide bar pull rod groove 202 is provided at one end of the slide bar 2, wherein the slide bar pull rod groove 202 is used to drive the slide bar 2 to slide left and right in the base 1 under the drive of the motor.

[0045] The slide bar 2 is provided with a substrate slot 201 , and a cushion block 5 is provided in the substrate slot 201 . The substrate slot 201 is used to load the substrate 6 , and the cushion block 5 is used to adjust the height of the substrate 6 .

[0046] The mother liquid tank 3 is located above the slide bar 2 and is located in the bottom bracket 1 and fixed to the bottom bracket 1, wherein the mother liquid tank 3 is provided with a mother liquid channel 301 and a supply groove 302, wherein the mother liquid channel 301 is used to place the growth mother liquid 7, and the supply groove 302 is used to place the mercury telluride 8; the supply groove 302 is arranged adjacent to the mother liquid channel, wherein the other end of the supply groove 302 is provided with a supply groove channel 303, wherein the supply groove channel 303 passes through the mother liquid tank 3.

[0047] The sliding upper cover 4 is located above the mother liquid tank 3 and inside the bottom bracket 1 for sealing. In addition, an upper cover pull rod groove is provided at one end of the sliding upper cover 4, wherein the upper cover pull rod groove is used to drive the sliding upper cover 4 to slide under the drive of the motor.

[0048] Specifically, the bottom bracket 1 is a supporting and surrounding structure, which can be used to place the slide bar 2, the mother liquid tank 3 and the sliding upper cover 4. The slide bar 2 and the sliding upper cover 4 can move left and right in the bottom bracket 1 under the transmission of the pull rod 10.

[0049] The slide bar 2 is provided with a substrate slot 201 matching the size of the substrate 6 . In addition to placing the substrate 6 , the substrate slot 201 also contains a pad 5 for adjusting the height of the substrate 6 . Meanwhile, the slide bar 2 is provided with a slide bar pull rod slot 202 .

[0050] The mother liquid tank 3 is in the surrounding structure of the bottom support 1, and its position is fixed relative to the bottom support 1. The mother liquid tank 3 is provided with a mother liquid channel 301 for placing a growth mother liquid 7 of a specific component. A supply tank 302 is provided beside the mother liquid channel 301 for placing mercury telluride 8. A supply tank channel 303 penetrating the mother liquid tank 3 is provided on the other side of the supply tank 302. A connecting channel 401 is provided on the sliding upper cover 4, and a sliding upper cover pull rod groove 402 is provided at one end of the sliding upper cover 4.

[0051] Before the liquid phase epitaxial growth, the pre-synthesized HgCdTe growth mother liquid 7 is placed in the mother liquid channel 301, the pad 5 and the CdZnTe substrate 6 are placed in the substrate groove 201 of the slider 2, and the specific weight of HgTe 8 is placed in the supply groove 302. The connecting groove 401 of the sliding upper cover 4 just connects the growth mother liquid 7 with the HgTe 8. Since the mercury partial pressure of the HgTe 8 is higher than that of the growth mother liquid 7, the HgTe 8 continuously and dynamically replenishes the growth mother liquid 7 with Hg, so as to maintain the stability of the components of the growth mother liquid 7.

[0052] When the growth system is slowly cooled to the set temperature, the motor-driven pull rod 10 drives the sliding cover 4 and the slide bar 2 to move to the right, and the substrate 6 contacts the growth mother solution 7 for epitaxial growth. At the same time, the connecting channel 401 is located on the right side of the mother solution channel 301, thereby achieving physical isolation between the mercury telluride 8 in the supply slot 302 and the growth mother solution 7, thereby reducing the convection effect during the epitaxial growth process.

[0053] After the thickness of the mercury cadmium telluride film reaches a predetermined value, the pull rod 10 drives the sliding cover 4 and the slide bar 2 to move to the right again, and the epitaxial film 9 is separated from the growth mother solution 7, and the film growth process is completed. At this time, the supply slot 302 is connected to the epitaxial film 9, and the mercury telluride 8 in the supply slot 302 can supplement the epitaxial material with mercury and tellurium, thereby improving the quality of the epitaxial material.

[0054] By using the graphite boat for improving the quality of liquid phase epitaxial film provided in the embodiment of the present application, mercury pressure compensation can be performed through mercury telluride in the supply tank before epitaxial growth, effectively maintaining the stability of the growth mother liquid components. At the same time, during the epitaxial growth process, the convection effect above the mother liquid is reduced by the physical isolation of the supply tank and the mother liquid pores, thereby improving the uniformity of the mother liquid temperature field, and finally improving the uniformity of the components and thickness of the epitaxial material. In addition, after the epitaxial growth is completed, the epitaxial material can be compensated for mercury and tellurium to improve the quality of the epitaxial material. The present invention can prepare a mercury cadmium telluride film with a bright surface and no macroscopic ripples, which can effectively reduce the difficulty of subsequent device processes, solve a series of problems such as interconnection failure and shading caused by poor thickness uniformity, and make a great contribution to the improvement of device performance.

[0055] Corresponding to the above-mentioned graphite boat for improving the quality of liquid phase epitaxial thin films, the embodiment of the present application also provides a method for improving the quality of liquid phase epitaxial thin films using a graphite boat, see Figure 7 , Figure 7 A flow chart of a method for improving the quality of liquid phase epitaxial thin films using a graphite boat provided in an embodiment of the present application is shown as follows: Figure 7 As shown, the specific steps include the following steps.

[0056] Step S701: start the horizontal liquid phase epitaxy system, control the liquid phase epitaxy system to start heating, and after the growth mother liquid is heated and melted and reaches a preset temperature, control the liquid phase epitaxial growth system to start cooling at a set rate.

[0057] Step S702: After the temperature of the liquid phase epitaxy system is cooled to the set growth temperature, the pull rod is controlled to drive the slider and the sliding cover to move so that the substrate is directly below the growth mother liquid channel, and the epitaxial growth is started with supercooling as the crystallization driving force.

[0058] Step S703: After the HgCdTe film reaches a suitable thickness, the pull rod is controlled to drive the slider and the sliding cover to move, so as to separate the epitaxial film from the growth mother solution, and the epitaxial growth is terminated.

[0059] Step S704: Control the liquid phase epitaxial system to start cooling down, and use the mercury telluride in the supply tank to supplement mercury and tellurium to the epitaxial material until the horizontal liquid phase epitaxial system is cooled to room temperature, thereby completing the epitaxial growth process.

[0060] It should be noted that, by driving the sliding upper cover before the epitaxial growth, the adverse effect of mercury convection generated by mercury telluride in the supply groove during the epitaxial growth process can be avoided.

[0061] In actual applications, before starting the horizontal liquid phase epitaxy system, the following preparatory work needs to be done: first, place the pad and the substrate in the substrate slot of the slider in turn; then, place the growth mother liquid and mercury telluride in the mother liquid slot; secondly, place the slider, the mother liquid slot, and the sliding cover in the card slot of the bottom bracket in turn; and thirdly, place the pull rod driven by the motor in the slider pull rod slot and the sliding cover pull rod slot.

[0062] The horizontal liquid phase epitaxy system is started, and the liquid phase epitaxy system begins to heat up. After the growth mother liquid is melted by heat and reaches a preset temperature, the liquid phase epitaxy growth system begins to cool down at a set rate. In this process, mercury telluride continuously and dynamically replenishes mercury to the growth mother liquid to maintain the stability of the growth mother liquid components. When the system temperature is cooled to the set growth temperature, the pull rod drives the slider and the sliding cover to move. The pull rod drives the slider so that the substrate is directly below the growth mother liquid channel, and the supercooling is used as the crystallization driving force to start epitaxial growth. After the mercury cadmium telluride film reaches a suitable thickness, the pull rod drives the slider and the sliding cover to move. The pull rod drives the slider to separate the epitaxial film from the growth mother liquid, and the epitaxial growth ends. S8, the liquid phase epitaxy system begins to cool down, and the mercury telluride in the supply tank replenishes mercury and tellurium to the epitaxial material to improve the quality of the epitaxial material. As the system cools down to room temperature, the epitaxial growth process is completed.

[0063] By using the method of using a graphite boat for improving the quality of liquid phase epitaxial thin films provided in the embodiment of the present application, mercury pressure compensation can be performed by using mercury telluride in the supply tank before epitaxial growth, effectively maintaining the stability of the growth mother liquid components. At the same time, during the epitaxial growth process, the convection effect above the mother liquid is reduced by physically isolating the supply tank from the mother liquid pores, thereby improving the uniformity of the mother liquid temperature field, and ultimately improving the uniformity of the components and thickness of the epitaxial material. In addition, after the epitaxial growth is completed, the epitaxial material can be compensated for mercury and tellurium to improve the quality of the epitaxial material. The present invention can prepare a mercury cadmium telluride film with a bright surface and no macroscopic ripples, which can effectively reduce the difficulty of subsequent device processes, solve a series of problems such as interconnection failure and shading caused by poor thickness uniformity, and make a significant contribution to the improvement of device performance.

[0064] It should be noted that the above is a description of a specific embodiment of the present specification. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the embodiments of the present specification.

[0065] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0066] The preferred embodiments of this specification disclosed above are only used to help explain this specification. The optional embodiments do not describe all the details in detail, nor do they limit the invention to only the specific implementation methods described. Obviously, many modifications and changes can be made according to the content of the embodiments of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the embodiments of this specification, so that technicians in the relevant technical field can well understand and use this specification. This specification is only limited by the claims and their full scope and equivalents.

Claims

1. A graphite boat for improving the quality of liquid phase epitaxial thin films, characterized in that: It includes a bottom support, a slide bar, a mother liquid tank and a sliding cover, wherein: The bottom bracket is a surrounding structure used to support the slide bar, the mother liquid tank and the sliding upper cover; The slide bar is located in the bottom bracket and is used for loading the substrate; The mother liquid tank is located above the slide bar and is located in the bottom bracket and fixed to the bottom bracket, wherein the mother liquid tank is provided with a mother liquid channel and a supply tank, the mother liquid channel is used to place the growth mother liquid, and the supply tank is used to place the mercury telluride; The sliding upper cover is located above the mother liquid tank and inside the bottom support for sealing.

2. The graphite boat for improving the quality of liquid phase epitaxial thin films according to claim 1, characterized in that: A slide bar pull rod groove is provided at one end of the slide bar, wherein the slide bar pull rod groove is used to drive the slide bar to slide left and right in the base under the drive of the motor.

3. The graphite boat for improving the quality of liquid phase epitaxial thin films according to claim 1, characterized in that: The slide bar is provided with a substrate slot, and a pad is provided in the substrate slot, wherein the substrate slot is used to load the substrate, and the pad is used to adjust the height of the substrate.

4. The graphite boat for improving the quality of liquid phase epitaxial thin films according to claim 1, characterized in that: The supply tank is arranged adjacent to the mother liquid channel, wherein a supply tank channel is arranged at the other end of the supply tank, wherein the supply tank channel passes through the mother liquid tank.

5. The graphite boat for improving the quality of liquid phase epitaxial thin films according to claim 1, characterized in that: The sliding upper cover is provided with a connecting channel.

6. The graphite boat for improving the quality of liquid phase epitaxial thin films according to claim 1, characterized in that: An upper cover pull rod groove is provided at one end of the sliding upper cover, wherein the upper cover pull rod groove is used to drive the sliding upper cover to slide under the drive of a motor.

7. A method for growing a graphite boat for improving the quality of liquid phase epitaxial thin films, characterized in that: include: Starting a horizontal liquid phase epitaxy system, controlling the liquid phase epitaxy system to start heating, and after the growth mother liquid is heated and melted and reaches a preset temperature, controlling the liquid phase epitaxial growth system to start cooling at a set rate; After the temperature of the liquid phase epitaxy system is cooled to the set growth temperature, the pull rod is controlled to drive the slide bar and the sliding upper cover to move so that the substrate is directly below the growth mother liquid channel, and the supercooling is used as the crystallization driving force to start the epitaxial growth; After the mercury cadmium telluride film reaches a suitable thickness, the pull rod is controlled to drive the slide bar and the sliding upper cover to move, so that the epitaxial film is separated from the growth mother solution, and the epitaxial growth ends; The liquid phase epitaxial system is controlled to start cooling down, and mercury and tellurium are supplemented to the epitaxial material through the mercury telluride in the supply tank until the horizontal liquid phase epitaxial system is cooled to room temperature, thereby completing the epitaxial growth process.

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