Semiconductor laser structure of integrated pumping source

Abstract

The invention relates to the technical field of lasers, in particular to a semiconductor laser structure of an integrated pumping source, which comprises a pumping light reflection cavity, a pumping light source, a pumping light source and a semiconductor laser, the plurality of pump chips are arranged in the pump light reflection cavity, and the plurality of pump chips are arranged on the inner wall of the bottom of the pump light reflection cavity along the circumference of a preset circle; the gain chip is arranged in the pump light reflection cavity, the gain chip is located on the inner wall of the bottom of the pump light reflection cavity, the gain chip is located at the circle center of the preset circle, and the gain chip is provided with a working face facing the inner wall of the top of the pump light reflection cavity; the pumping chips are used for emitting multiple beams of sub-pumping light, the multiple beams of sub-pumping light are reflected by the inner wall of the top of the pumping light reflection cavity and then converge on the working face to form a circular pumping light spot, and the circular pumping light spot pumps the gain chip so that the gain chip can output laser beams from the working face. The laser module is at least beneficial to realizing small size, integration and high performance of the laser module.

Description

Technical Field

[0001] The invention belongs to the technical field of lasers, and in particular relates to a semiconductor laser structure with an integrated pump source. Background Art

[0002] Optically pumped vertical external cavity surface emitting semiconductor lasers have the advantages of both semiconductor lasers and solid-state lasers, and can achieve the output of circularly symmetrical lasers with tunable wavelength, high power and high beam quality. In addition, the wavelength coverage of the laser emitted by optically pumped vertical external cavity surface emitting semiconductor lasers is relatively wide, so they are widely used in laser medical treatment, underwater resource detection, marine communications and other fields.

[0003] In some working conditions in application fields such as underwater resource detection and laser medical treatment, high-performance, small-volume laser modules are required. Traditional optically pumped vertical external cavity surface emitting semiconductor lasers require a separate pump source to provide laser pumping, which cannot meet the application requirements of small-volume laser modules. Vertical cavity surface emitting laser arrays, edge emitting lasers (EEL, Edge Emitting Laser) and other lasers can achieve high-power output, but cannot achieve high beam quality, single longitudinal mode, and circularly symmetrical spot laser output in a small-volume laser module. Summary of the invention

[0004] In view of this, the present invention aims to provide a semiconductor laser structure with an integrated pump source, which is at least conducive to achieving a small volume, integration and high performance of a laser module.

[0005] To achieve the above object, the technical solution created by the present invention is implemented as follows: The invention provides a semiconductor laser structure with an integrated pump source, comprising: a pump light reflection cavity, the top inner wall of the pump light reflection cavity is in a curved shape; a plurality of pump chips arranged in the pump light reflection cavity, the plurality of pump chips are arranged on the bottom inner wall of the pump light reflection cavity along the circumference of a preset circle; a gain chip arranged in the pump light reflection cavity, the gain chip is located on the bottom inner wall of the pump light reflection cavity, and the gain chip is located at the center of the preset circle, and the gain chip has a working surface facing the top inner wall of the pump light reflection cavity; the plurality of pump chips are used to emit a plurality of sub-pump lights, the plurality of sub-pump lights are reflected by the top inner wall of the pump light reflection cavity and converge on the working surface into a circular pump light spot, the circular pump light spot pumps the gain chip, so that the gain chip outputs a laser beam from the working surface.

[0006] Furthermore, an output coupling mirror is provided on the top of the pump light reflection cavity, a working surface of the gain chip faces the output coupling mirror, and the laser beam is emitted from the pump light reflection cavity through the output coupling mirror.

[0007] Furthermore, the output coupling mirror includes a plane lens, a plano-concave lens, a plano-convex lens or an aspherical lens.

[0008] Furthermore, the gain chip includes an optically pumped vertical external cavity surface emitting semiconductor laser chip, and the pump chip includes a vertical external cavity surface emitting semiconductor laser chip.

[0009] Further, the wavelength of the laser beam is within the range of 600nm to 1200nm, and the material of the gain chip includes gallium arsenide; or, the wavelength of the laser beam is within the range of 1300nm to 1700nm, and the material of the gain chip includes indium phosphide.

[0010] Further, the wavelength of the sub-pump light is within the range of 600nm-1200nm, and the material of the pump chip includes gallium arsenide; or, the wavelength of the sub-pump light is within the range of 1300nm-1700nm, and the material of the pump chip includes indium phosphide.

[0011] Furthermore, the substrate, the top curved reflector and the side wall portion form a pump light reflection cavity, the surface of the substrate facing the pump light reflection cavity serves as the bottom inner wall of the pump light reflection cavity, and the surface of the top curved reflector facing the pump light reflection cavity serves as the top inner wall of the pump light reflection cavity.

[0012] Furthermore, the substrate is circular, the orthographic projection of the top arc-shaped reflector on the substrate surface is circular, and the side wall portion is cylindrical.

[0013] Furthermore, a reflection film is provided on the top inner wall of the pump light reflection cavity, and the reflection film has a high reflectivity for the wavelength band of the sub-pump light.

[0014] Furthermore, the preset circle includes a first preset circle and a second preset circle, the center of the first preset circle coincides with the center of the second preset circle, and the radius of the first preset circle is greater than the radius of the second preset circle.

[0015] Compared with the prior art, the invention can achieve the following beneficial effects: The semiconductor laser structure with integrated pump source provided by the present invention integrates a gain chip and a pump chip in a pump light reflection cavity, and uses the hemispherical top inner wall of the pump light reflection cavity to converge the sub-pump light emitted by the pump chip, which is conducive to realizing the small size and integration of the semiconductor laser structure with integrated pump source. The semiconductor laser structure with integrated pump source provided by the present invention is used as a laser module to meet the requirements of small size and integration of the laser module under some working conditions, thereby helping to increase the use scenarios of the semiconductor laser structure with integrated pump source.

[0016] In addition, the multiple pump chips arranged in a ring on the outer circle of the gain chip can not only achieve high-power pump light output, but the ring arrangement also makes the pump light spot converged on the working surface of the gain chip uniformly circular, that is, a circular pump light spot can be formed. In this way, the optical power density of the pumped area on the working surface of the gain chip is evenly distributed, and the circular pump light spot can better match the circular fundamental mode light spot. The circular fundamental mode light spot refers to the circular fundamental mode light spot on the surface of the gain chip in the stable resonant cavity formed by the output coupling mirror and the bottom DBR layer of the gain chip. Better matching of the circular fundamental mode light spot is conducive to reducing the oscillation gain of the high-order mode in the resonant cavity, thereby suppressing the generation of multi-mode laser of the semiconductor laser with an integrated pump source, so that the laser beam output by the gain chip is a fundamental mode laser with high beam quality.

[0017] The output coupling mirror is arranged at the top of the pump light reflection cavity, and forms a resonant cavity with the bottom DBR layer of the gain chip to obtain periodic resonance, thereby realizing the stable output of the laser beam. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings constituting part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments and descriptions of the present invention are used to explain the present invention and do not constitute an improper limitation on the present invention. In the drawings: Figure 1 A schematic top view of a semiconductor laser structure with an integrated pump source according to an embodiment of the present invention; Figure 2 A schematic top view of another semiconductor laser structure with an integrated pump source according to an embodiment of the present invention; Figure 3 A schematic structural diagram of a semiconductor laser structure with an integrated pump source according to an embodiment of the present invention; Figure 4 A schematic diagram of the structure of a gain chip according to an embodiment of the present invention; Figure 5 A schematic diagram of the structure of a pump chip described in an embodiment of the present invention.

[0019] Explanation of the reference numerals: 104, pump light reflection cavity; 103, pump chip; 100, preset circle; 101, gain chip; 105, output coupling mirror; 502, first substrate layer; 503, first DBR layer; 506, window layer; 507, pump light anti-reflection film; 504, first barrier layer; 505, first quantum well layer; 501, first bonding layer; 402, N-type substrate layer; 403, N-type DBR layer; 404, active layer; 405, oxidation restriction layer; 406, P-type DBR layer; 407, P-type electrode layer; 401, N-type electrode layer; 106, substrate; 107, top arc-shaped reflection mirror; 108, side wall; 300, first preset circle; 301, second preset circle. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solution and advantages of the invention more clear, the invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the invention and do not constitute a limitation of the invention.

[0021] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments may be combined with each other.

[0022] In the description of the invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the invention, unless otherwise specified, the meaning of "multiple" is two or more.

[0023] In the description of the invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the invention can be understood according to specific circumstances.

[0024] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0025] refer to Figure 1 and Figure 3 The present invention provides a semiconductor laser structure with an integrated pump source, including: a pump light reflection cavity 104, the top inner wall of the pump light reflection cavity 104 is in a curved shape; a plurality of pump chips 103 arranged in the pump light reflection cavity 104, the plurality of pump chips 103 are arranged along the circumference of a preset circle 100 on the bottom inner wall of the pump light reflection cavity 104; a gain chip 101 arranged in the pump light reflection cavity 104, the gain chip 101 is located at the inner wall of the pump light reflection cavity 104; The gain chip 101 is located at the center of the preset circle 100, and the gain chip 101 has a working surface facing the top inner wall of the pump light reflection cavity 104; the plurality of pump chips 103 are used to emit multiple beams of sub-pump light, which are reflected by the top inner wall of the pump light reflection cavity 104 and converge into a circular pump light spot on the working surface of the gain chip 101, and the circular pump light spot pumps the gain chip 101, so that the gain chip 101 outputs a laser beam from its working surface.

[0026] The arrangement of the plurality of pump chips 103 along the circumference of the preset circle 100 on the bottom inner wall of the pump light reflection cavity 104 means that the centers of the plurality of pump chips 103 arranged along the circumference fall on the circumference of the preset circle 100. The location of the gain chip 101 at the center of the preset circle 100 means that the center of the gain chip 101 coincides with the center of the preset circle 100.

[0027] It should be noted that a plurality of pump chips 103 form a laser pump array, which are arranged in a ring around the gain chip 101. Each pump chip 103 emits a beam of sub-pump light, and the multiple beams of sub-pump light are reflected by the top inner wall of the pump light reflection cavity 104 and converged into a total pump light. The total pump light is incident on the working surface of the gain chip 101 to form a circular pump light spot. The arrangement density and number of layers of the pump chips 103 in the laser pump array can be adjusted according to the power of the required total pump light, and the power of the total pump light can be increased by increasing the number of pump chips 103.

[0028] The ring-shaped arrangement of the pump chips 103 can make the pump spot acting on the working surface of the gain chip 101 circular, so it can better match the circular fundamental mode spot in the resonant cavity of the semiconductor laser of the integrated pump source, avoid the generation of high-order modes, and achieve fundamental mode laser output with high beam quality.

[0029] Furthermore, an output coupling mirror 105 is provided on the top of the pump light reflection cavity 104 , and the working surface of the gain chip 101 faces the output coupling mirror 105 . The laser beam is emitted from the pump light reflection cavity 104 through the output coupling mirror 105 .

[0030] The semiconductor laser structure with integrated pump source provided by the embodiment of the present invention integrates the pump chip 103 and the gain chip 101 as the pump source on the bottom inner wall of the pump light reflection cavity 104, and the pump light is converged to the surface of the gain chip 101 through the top inner wall of the pump light reflection cavity 104, and the pump light absorption layer inside the gain chip 101 absorbs the pump light to generate gain. In addition, the pump power can be scaled by increasing or decreasing the number and arrangement of the ring-arranged pump chips 103, and the power, spot size and laser mode of the laser beam can be controlled by adjusting the curvature radius of the top inner wall of the pump light reflection cavity 104 and the height of the output coupling mirror 105. The control of the laser mode refers to the control of the longitudinal mode and the reduction of the generation of multiple transverse modes.

[0031] Further, the gain chip 101 includes an optically pumped vertical external cavity surface emitting semiconductor laser chip, and the pump chip 103 includes a vertical external cavity surface emitting semiconductor laser chip.

[0032] The vertical external cavity surface emitting semiconductor laser chip can output a single longitudinal mode laser with a circular spot along the direction of the vertical cavity surface (working surface). It is easy to be integrated into the laser module to produce high-performance laser. As the name implies, the optically pumped vertical external cavity surface emitting semiconductor laser chip is an optically pumped structure, and its epitaxial structure does not require doping.

[0033] When the vertical external cavity surface emitting semiconductor laser chip is used as the pump chip 103, the pump light emitted by the vertical external cavity surface emitting semiconductor laser chip is converged onto the working surface of the gain chip 101 through the top inner wall of the pump light reflection cavity 104. The pump light spot formed by the vertical external cavity surface emitting semiconductor laser chips arranged in a ring is a circular convergent light spot. The power density of the circular convergent light spot is more uniform, which is conducive to ensuring that the gain chip 101 outputs a high-quality laser beam.

[0034] Furthermore, the output coupling mirror 105 includes a plane lens, a plano-concave lens, a plano-convex lens or an aspheric lens. Specifically, the surface of the output coupling mirror 105 facing the pump light reflection cavity needs to be coated with a reflective film with high reflectivity in the output laser beam band, and the type and parameters of the output coupling mirror 105 can be adjusted according to the spot size, output power and other performance requirements of the laser beam. In some examples, it is necessary to make the laser beam emitted from the pump light reflection cavity 104 meet the requirements of large spot and high power, so the output coupling mirror 105 can select a plano-concave lens with a large curvature radius and low reflectivity; in some examples, it is necessary to make the laser beam emitted from the pump light reflection cavity 104 meet the requirements of small spot and high beam quality, and the output coupling mirror 105 can select a plano-concave lens with a small curvature radius and high reflectivity; in some examples, it is necessary to make the laser beam emitted from the pump light reflection cavity 104 meet the requirements of small spot and single-mode output, and the output coupling mirror 105 can select a plane mirror with high reflectivity.

[0035] Further, the wavelength of the laser beam output by the gain chip 101 is within the range of 600nm to 1200nm, and the material of the gain chip 101 includes gallium arsenide, or the wavelength of the laser beam is within the range of 1300nm to 1700nm, and the material of the gain chip 101 includes indium phosphide. It can be understood that for the gain chip 101, the material system of the gain chip 101 can be selected according to the wavelength requirement of the laser beam, and the material system of the corresponding wavelength can also be selected when the required laser beam is of other wavelengths.

[0036] Further, the wavelength of the sub-pump light is within the range of 600nm to 1200nm, and the material of the pump chip 103 includes gallium arsenide, or the wavelength of the sub-pump light is within the range of 1300nm to 1700nm, and the material of the pump chip 103 includes indium phosphide. It can be understood that for the pump chip 103, the material system of the pump chip 103 can be selected according to the application requirements of the wavelength of the pump light, and when the required pump light is other wavelengths, the material system of the corresponding wavelength can also be selected.

[0037] In some embodiments of the present invention, reference Figure 4, the gain chip 101 is a vertical external cavity surface emitting semiconductor laser chip based on a gallium arsenide material system; in some examples, the specific structure of the gain chip 101 includes: a first substrate layer 502, a first DBR layer 503, a pump light absorption layer, a window layer 506 and a pump light anti-reflection film 507 arranged in sequence along the direction from the bottom of the pump light reflection cavity 104 to the top of the pump light reflection cavity 104, the pump light absorption layer includes a first barrier layer 504 and a first quantum well layer 505 arranged alternately, and the pump light absorption layer and the window layer 506 and the first The film layers in contact with the DBR layer 503 are all first barrier layers 504; in some examples, the material of the first substrate layer 502 may include GaAs, the material of the first DBR layer 503 may include a first single layer and a second single layer arranged alternately, the material of the first single layer may include GaAs, the material of the second single layer may include AlAs, the thickness of the first single layer and the thickness of the second single layer may both be 1 / 4 of the output wavelength of the gain chip 101, and the first DBR layer 503 is undoped; in some examples, the material of the first barrier layer 504 may include AlAs. x1 Ga 1- X1 As, the material of the first quantum well layer 505 may include In y1 Ga 1-y1 As, wherein the composition y1 of In can be in the range of 0~0.5, and x1 can be in the range of 0~0.2; in some examples, the thickness of the first barrier layer 504 is in the range of 20nm~200nm; in some examples, the thickness of the first quantum well layer 505 is in the range of 1nm~20nm; in some examples, the light emitting band of the gain chip 101 is in the range of 800nm~1300nm.

[0038] In some embodiments of the present invention, the gain chip 101 further includes a first bonding layer 501 , and the first bonding layer 501 is located between the first substrate layer 502 and the bottom inner wall of the pump light reflection cavity 104 .

[0039] In some embodiments of the present invention, reference Figure 5 , the pump chip 103 is a vertical external cavity surface emitting semiconductor laser chip based on a gallium arsenide material system; in some examples, the specific structure of the pump chip 103 may include: an N-type substrate layer 402, an N-type DBR layer 403, an active layer 404, an oxidation restriction layer 405, a P-type DBR layer 406 and a P-type electrode layer 407 are arranged in sequence along the direction from the bottom of the pump light reflection cavity 104 to the top of the pump light reflection cavity 104; in some examples, the material of the N-type substrate layer 402 may be an N-type GaAs material, the N-type DBR layer 403 includes a third single layer and a fourth single layer arranged alternately, and the material of the third single layer may include Al 0.25 Ga 0.75As, the material of the fourth single layer may include Al 0.95 Ga 0.05 As, the thickness of the third single layer and the thickness of the fourth single layer can be 1 / 4 of the output wavelength of the pump chip 103, and the dopant of the N-type DBR layer 403 can be Si, and the doping concentration of Si can be 1×10 16 / cm 3 ~8×10 18 / cm 3 In some examples, the active layer 404 includes a second barrier layer and a second quantum well layer arranged alternately, and the material of the second barrier layer may include Al 0.42 Ga 0.58 As, the material of the second quantum well layer may include Al 0.08 Ga 0.92 As; in other examples, the Al composition in the second barrier layer and the second quantum well layer can also be in the range of 0 to 0.5; in some examples, the thickness of the second barrier layer can be in the range of 20nm to 200nm, the thickness of the second quantum well layer can be in the range of 1nm to 20nm, and the light emitting band of the pump chip 103 can be in the range of 600nm to 800nm; in some examples, the P-type DBR layer 406 includes a fifth single layer and a sixth single layer arranged alternately, and the material of the fifth single layer includes Al 0.25 Ga 0.75 As, the sixth single layer includes Al 0.95 Ga 0.05 As, the thickness of the fifth single layer and the thickness of the sixth single layer are 1 / 4 of the wavelength of the output beam of the pump chip 103, and the dopant of the P-type DBR layer 406 can be C, and the doping concentration of C can be 1×10 18 / cm 3 ~1×10 28 / cm 3 In some examples, the material of the oxidation restriction layer 405 includes Al 0.98 Ga 0.02 As, the thickness of the oxidation restriction layer 405 may be in the range of 20 nm to 1000 nm.

[0040] In some embodiments of the present invention, the pump chip 103 further includes an N-type electrode layer 401 , and the N-type electrode layer 401 is located between the N-type substrate layer 402 and the bottom inner wall of the pump light reflection cavity 104 .

[0041] It should be noted that the numerical value of the subscript of the element in the corresponding material in the embodiment of the present invention represents the mass ratio of the element to other elements. For example, Al x1 Ga 1-X1As means the ratio of the mass of Al, the mass of Ga and the mass of As in the material is X1:1-X1:1. x1 GaAs is not a chemical formula. It should be noted that, in materials including As, As accounts for 50% of the total mass of the material, and other elements except As account for 50% of the total mass of the material.

[0042] Furthermore, the substrate 106 , the top curved reflector 107 and the side wall portion 108 form a pump light reflection cavity 104 , the surface of the substrate 106 facing the pump light reflection cavity 104 serves as the bottom inner wall of the pump light reflection cavity 104 , and the surface of the top curved reflector 107 facing the pump light reflection cavity 104 serves as the top inner wall of the pump light reflection cavity 104 .

[0043] Furthermore, the substrate 106 is circular, the orthographic projection of the top arc-shaped reflector 107 on the surface of the substrate 106 is circular, the side wall 108 is cylindrical, and the top arc-shaped reflector 107 is curved. In this way, the pump light reflection cavity 104 can not only accommodate the pump chips 103 arranged in an annular shape, but also ensure that the pump light reflection cavity 104 has a small size, which is conducive to the miniaturization of the semiconductor laser structure with an integrated pump source.

[0044] It should be noted that the radius of curvature of the top arc reflector 107 and the height of the side wall 108 can be adjusted according to the size of the circular converging light spot that the gain chip 101 needs to receive, so as to adjust the size of the circular converging light spot received by the gain chip 101 .

[0045] Furthermore, the top inner wall of the pump light reflection cavity 104 has a reflection film, and the reflection film needs to have a high reflectivity for the sub-pump light.

[0046] For further reference, Figure 2 The preset circle 100 includes a first preset circle 300 and a second preset circle 301. The center of the first preset circle 300 coincides with the center of the second preset circle 301, and the radius of the first preset circle 300 is greater than the radius of the second preset circle 301. Among the plurality of pump chips 103, some pump chips 103 are arranged along the circumference of the first preset circle 300, and some pump chips 103 are arranged along the circumference of the second preset circle 301, which can improve the intensity of the total pump light. In the radial direction, the pump chips 103 arranged along the circumference of the first preset circle 300 and the pump chips 103 arranged along the circumference of the second preset circle 301 are staggered with each other, which is conducive to improving the uniformity of the optical power density of the total pump light after convergence.

[0047] For optically pumped vertical external cavity surface emitting semiconductor laser chips, if the pump light adopts the side pumping method, the pump spot is elliptical, which cannot be completely matched with the circular fundamental mode spot on the surface of the gain chip. It is easy to generate high-order modes under the pumping of high-power pump light, and the side pumping is not conducive to the integration of laser modules. The circular fundamental mode spot refers to: the inherent fundamental mode oscillation range formed by the resonant cavity composed of the output coupling mirror and the DBR layer, which appears as a circle on the surface of the gain chip, that is, a circular fundamental mode spot. The present invention arranges the pump chip 103 in a ring around the gain chip 101, and the pump chip 103 uses a high-power vertical surface emitting semiconductor laser chip, and the sub-pump light is converged and reflected to the surface of the gain chip 101 through the top inner wall of the pump light reflection cavity 104. The ring arrangement makes the pump spot after convergence a circular convergence spot with uniform distribution of optical power density, and the circular convergence spot matches the fundamental mode spot in the resonant cavity of the gain chip 101, reducing the generation of high-order modes, and can achieve high beam quality fundamental mode laser output. And by increasing the number of pump chips 103, the maximum pump power of the semiconductor laser with integrated pump source can be improved. The output coupling mirror 105 is set at the top of the pump light reflection cavity 104, and the output power of the laser beam, the spot size of the laser beam, and the output mode of the laser beam are controlled by adjusting the top height of the pump light reflection cavity 104 and the parameters of the output coupling mirror 105. The number of pump chips 103, the structure of the pump light reflection cavity 104, and the parameters of the output coupling mirror 105 can be adjusted according to the performance requirements of the semiconductor laser structure with integrated pump source. Using the semiconductor laser structure with integrated pump source as a laser module can meet the requirements of small size, integration and high performance of the laser module.

[0048] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the disclosure of the present invention can be performed in parallel, sequentially or in different orders, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and this document does not limit this.

[0049] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor laser structure with an integrated pump source, characterized in that: include: A pump light reflection cavity, wherein the top inner wall of the pump light reflection cavity is in a curved shape; A plurality of pump chips are arranged in the pump light reflection cavity, wherein the plurality of pump chips are arranged along a circumference of a preset circle on the bottom inner wall of the pump light reflection cavity; A gain chip disposed in the pump light reflection cavity, the gain chip being located on the bottom inner wall of the pump light reflection cavity, and the gain chip being located at the center of the preset circle, and the gain chip having a working surface facing the top inner wall of the pump light reflection cavity; The plurality of pump chips are used to emit a plurality of sub-pump lights, which are reflected by the top inner wall of the pump light reflection cavity and converge into a circular pump light spot on the working surface. The circular pump light spot pumps the gain chip so that the gain chip outputs a laser beam from the working surface.

2. The semiconductor laser structure with integrated pump source according to claim 1, characterized in that: An output coupling mirror is provided on the top of the pump light reflection cavity, a working surface of the gain chip faces the output coupling mirror, and the laser beam is emitted from the pump light reflection cavity through the output coupling mirror.

3. The semiconductor laser structure with integrated pump source according to claim 2, characterized in that: The output coupling mirror includes a plane lens, a plano-concave lens, a plano-convex lens or an aspherical lens.

4. The semiconductor laser structure with integrated pump source according to claim 1, characterized in that: The gain chip comprises an optically pumped vertical external cavity surface emitting semiconductor laser chip, and the pump chip comprises a vertical external cavity surface emitting semiconductor laser chip.

5. The semiconductor laser structure with integrated pump source according to claim 4, characterized in that: The wavelength of the laser beam is within the range of 600nm to 1200nm, and the material of the gain chip includes gallium arsenide; or, the wavelength of the laser beam is within the range of 1300nm to 1700nm, and the material of the gain chip includes indium phosphide.

6. The semiconductor laser structure with integrated pump source according to claim 1 or 4, characterized in that: The wavelength of the sub-pump light is within the range of 600nm-1200nm, and the material of the pump chip includes gallium arsenide; or, the wavelength of the sub-pump light is within the range of 1300nm-1700nm, and the material of the pump chip includes indium phosphide.

7. The semiconductor laser structure with integrated pump source according to claim 1, characterized in that: The substrate, the top curved reflector and the side wall portion form the pump light reflection cavity, the surface of the substrate facing the pump light reflection cavity serves as the bottom inner wall of the pump light reflection cavity, and the surface of the top curved reflector facing the pump light reflection cavity serves as the top inner wall of the pump light reflection cavity.

8. The semiconductor laser structure with integrated pump source according to claim 7, characterized in that: The substrate is circular, the orthographic projection of the top arc-shaped reflector on the surface of the substrate is circular, and the side wall portion is cylindrical.

9. The semiconductor laser structure with integrated pump source according to claim 1, 7 or 8, characterized in that: A reflective film is provided on the top inner wall of the pump light reflection cavity, and the reflective film has a high reflectivity for the wavelength band of the sub-pump light.

10. The semiconductor laser structure with integrated pump source according to claim 1, characterized in that: The preset circle includes a first preset circle and a second preset circle, the center of the first preset circle coincides with the center of the second preset circle, and the radius of the first preset circle is greater than the radius of the second preset circle.

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