Light-emitting device, manufacturing method thereof, pixel array and electronic equipment

Abstract

According to the light-emitting device, the manufacturing method thereof, the pixel array and the electronic equipment, when an electrode drives a light-emitting layer to generate photons, the photons reach the interface of a nanometer antenna and the light-emitting layer to generate surface plasmons, and the surface plasmons can be conducted along the nanometer antenna and are radiated outwards on the surface of the side, facing a substrate, of the nanometer antenna, so that the surface plasmons are generated. Therefore, photons which are originally difficult to radiate outwards in the light-emitting layer are easier to radiate outwards, the quantity of the photons which radiate outwards is increased, and the light-emitting efficiency of the light-emitting device is improved. Moreover, the carrier barrier layer shields at least part of the joining edge, so that the amount of carriers migrated to the joining edge can be reduced, the carriers provided by the electrode are forced to migrate to the first surface of the nano antenna, the recombination probability of the carriers is increased, the amount of the recombination carriers is further increased, the electro-optical conversion efficiency is improved, and the photoelectric conversion efficiency is improved. The light-emitting efficiency of the light-emitting device can be improved, and the electro-optical conversion efficiency can also be improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting device, a manufacturing method thereof, a pixel array and an electronic device. Background Art

[0002] As a self-luminous display device, electroluminescent display does not need to be equipped with a backlight source compared to liquid crystal display. It can not only reduce the thickness and quality of electroluminescent display, but also improve the display color contrast and display effect. Among them, electroluminescent display generally includes: a substrate, and an anode, a light-emitting layer and a cathode arranged on the substrate. The anode can provide holes to the light-emitting layer, and the cathode can provide electrons to the light-emitting layer. The holes and electrons meet and recombine in the light-emitting layer, so that the light-emitting layer generates photons and emits light. Since only a small number of the generated photons can be emitted through spontaneous radiation, a large number of photons will remain in the light-emitting layer and be converted into heat and lost, resulting in low luminous efficiency of electroluminescent display. Summary of the invention

[0003] The present application provides a light-emitting device, a manufacturing method thereof, a pixel array and an electronic device, which are used to improve the light-emitting efficiency of the light-emitting device and can also improve the electro-optical conversion efficiency.

[0004] In a first aspect, an embodiment of the present application provides a light-emitting device, which may include: a substrate, a nano-antenna and a carrier blocking layer disposed on the substrate, a light-emitting layer disposed on the nano-antenna and the carrier blocking layer, and an electrode disposed on the light-emitting layer. When the nano-antenna is reused as an anode, the electrode disposed on the light-emitting layer can be regarded as a cathode, or the nano-antenna can also be reused as a cathode, in which case the electrode disposed on the light-emitting layer can be regarded as an anode, so there is no limitation on what kind of electrode the nano-antenna is reused as, and it can be limited according to actual conditions. The light-emitting layer may only include the photon generating layer. Of course, the light-emitting layer may also be a multilayer structure formed by stacking multiple film layers. In this case, the multilayer structure may include: an electron injection layer, a hole injection layer, an electron transport layer, a hole transport layer, an electron blocking layer, a hole blocking layer and a photon generating layer. Regardless of whether the nanoantenna is reused as an anode or a cathode, along the direction from the anode to the cathode, the stacking order of the film layers in the multilayer structure is: hole injection layer, hole transport layer, electron blocking layer, photon generating layer, hole blocking layer, electron transport layer and electron injection layer; of course, the stacking order of the film layers is not limited to the one listed above, and can also be: electron blocking layer, hole injection layer, hole transport layer, photon generating layer, electron transport layer, electron injection layer and hole blocking layer, or can also be: hole injection layer, electron blocking layer, hole transport layer, photon generating layer, electron transport layer, hole blocking layer and electron injection layer. The specific arrangement can be made according to actual conditions and is not limited here. Among them, the role of the hole injection layer includes lowering the potential barrier of hole injection and improving the mobility of holes, the role of the electron injection layer includes lowering the potential barrier of electron injection and improving the mobility of electrons, the role of the hole transport layer includes improving the mobility of holes, the role of the electron transport layer includes improving the mobility of electrons, the role of the hole blocking layer includes preventing hole transport and reducing the mobility of holes, the role of the electron blocking layer includes preventing electron transport and reducing the mobility of electrons, and the role of the photon generating layer includes providing space for the recombination of holes and electrons and generating photons. Through the setting of the multi-layer structure, electrons and holes can be effectively and quickly migrated to the photon generating layer, which is conducive to improving the recombination rate of holes and electrons, and then conducive to improving the electro-optical conversion efficiency.

[0005] Among them, no matter whether the nano-antenna is reused as an anode or a cathode, the carriers provided by the electrode can migrate to the nano-antenna, and the carriers provided by the nano-antenna also migrate to the electrode. When the polarities of the two carriers are opposite, they meet and recombine, and drive the light-emitting layer to generate photons. The photons reach the interface between the nano-antenna and the light-emitting layer (that is, the first surface of the nano-antenna facing away from the substrate) to generate surface plasmons, and the surface plasmons will be conducted along the nano-antenna, and radiate outward through the surface of the nano-antenna facing the substrate, making it easier for the photons in the light-emitting layer that were originally difficult to radiate outward to radiate outward, thereby increasing the amount of photons radiated outward, thereby improving the luminous efficiency of the light-emitting device. In other words, the light-emitting device in the embodiment of the present application emits light in the direction of the nano-antenna toward the substrate, and the light-emitting surface of the light-emitting device is on the side of the substrate facing away from the nano-antenna, so the substrate can be made of transparent material to avoid affecting the luminous effect. Exemplarily, the distance between the nanoantenna and the photon generating layer can be set as small as possible, for example but not limited to, the distance between the nanoantenna and the photon generating layer is set to be no greater than 20 nm, so that the photons generated by the photon generating layer can be more directly incident on the surface of the photon nanoantenna, producing a better surface plasmon effect, which is beneficial to further improve the luminous efficiency.

[0006] Furthermore, the nanoantenna has a side surface, and the edge connecting the side surface and the first surface can be called a connecting edge. The carrier blocking layer used to prevent the migration of carriers (holes or electrons) provided by the electrode can block at least part of the connecting edge, thereby reducing the amount of carriers migrating to the connecting edge, forcing the carriers provided by the electrode to migrate to the first surface of the nanoantenna, and when the carriers provided by the nanoantenna migrate from the first surface to the electrode, the probability of recombination of carriers of different polarities can be increased, thereby increasing the amount of recombined carriers, thereby improving the electro-optical conversion efficiency, achieving the goal of improving both the luminous efficiency of the light-emitting device and the electro-optical conversion efficiency.

[0007] It should be understood that when the nanoantenna has multiple side surfaces, the connecting edge refers to the edge between each side surface and the first surface, so the nanoantenna has multiple connecting edges, and the connecting edges correspond to the side surfaces one by one. For any side surface: if the angle formed by the first surface and the side surface is a right angle, an acute angle, or an obtuse angle, then when looking at the light-emitting device in a direction perpendicular to the first surface, the connecting edge between the first surface and the side surface is a line segment, and the carrier blocking layer can block at least part of the line segment; or, if the angle formed by the first surface and the side surface is a rounded angle, then when looking at the light-emitting device in the first direction, the connecting edge between the first surface and the side surface is a circular arc, and the carrier blocking layer can block at least part of the circular arc. The planes perpendicular to the first surface and the side surface are respectively referred to as reference planes, and the first direction can be a direction perpendicular to the reference plane.

[0008] Exemplarily, when the carrier blocking layer blocks at least a portion of the connecting edge, the area in the first surface connected to the connecting edge can also be blocked by the carrier blocking layer. At this time, the electrode is located on the side of the carrier blocking layer away from the connecting edge. In this way, the carrier blocking layer can prevent the carriers provided by the electrode from migrating toward the connecting edge, and force the carriers provided by the electrode to migrate to the exposed area of ​​the first surface except the blocked area, effectively increasing the probability of recombination of carriers of different polarities, increasing the amount of recombined carriers, and thus improving the electro-optical conversion efficiency. Exemplarily, the width of the area blocked by the carrier blocking layer in the first surface of the nanoantenna can be set to 0 to 100 nm, which can be set specifically according to the actual application situation. For example, in a high-order resonance scenario, the size of the nanoantenna is generally large. At this time, the width of the area blocked by the carrier blocking layer in the first surface can be set slightly larger, which can reduce the difficulty of making the carrier blocking layer and even the light-emitting device, and improve the manufacturing efficiency; in a low-order resonance scenario, the size of the nanoantenna is generally small. At this time, the width of the area blocked by the carrier blocking layer in the first surface can be set slightly smaller to avoid the first surface of the nanoantenna being blocked more, resulting in a reduction in the amount of photons radiated outward, thereby avoiding a reduction in luminous efficiency. It should be understood that the resonance order is related to the luminous intensity. The higher the resonance order, the weaker the luminous intensity. Conversely, the lower the resonance order, the higher the luminous intensity. Therefore, a high-order resonance scenario refers to a scenario with weaker luminous intensity, and a low-order resonance scenario refers to a scenario with stronger luminous intensity.

[0009] Alternatively, when the carrier blocking layer blocks at least part of the connecting edge, the carrier blocking layer can also block at least part of the side. Wherein, when the carrier blocking layer blocks part of the side, after the nano-antenna is made on the substrate, a filling layer can be made on the substrate, and then a carrier blocking layer can be made on the filling layer. At this time, the carrier blocking layer is in direct contact with the filling layer and the nano-antenna respectively but not in direct contact with the substrate, so that the filling layer can fill the space between the carrier blocking layer and the substrate, which can reduce the use of the carrier blocking layer. When the price of the material for making the carrier blocking layer is high but the price of the material for making the filling layer is low, the manufacturing cost of the light-emitting device can also be reduced. The selection of the material for making the filling layer can be set according to actual conditions, and no strict requirements are made here. Alternatively, when the carrier blocking layer completely blocks the side, after the nano-antenna is made on the substrate, the carrier blocking layer can continue to be made on the substrate. At this time, the carrier blocking layer is in direct contact with the substrate and the nano-antenna respectively, so that there is no need to make a filling layer, reduce the manufacturing steps of the light-emitting device, simplify the manufacturing process, and improve the manufacturing efficiency.

[0010] Of course, when the carrier blocking layer blocks at least part of the connecting edge, the carrier blocking layer can not only block at least part of the side surface, but the area connected to the connecting edge in the first surface can also be blocked by the carrier blocking layer, so that the carrier blocking layer can completely wrap the connecting edge, effectively preventing the carriers provided by the electrode from migrating to the connecting edge, and forcing the carriers provided by the electrode to migrate to the exposed area in the first surface, thereby effectively improving the electro-optical conversion efficiency.

[0011] In addition, the distance between the first surface and the substrate in the nanoantenna can be recorded as the first distance, the surface of the carrier blocking layer facing away from the substrate can be recorded as the second surface, and the distance between the second surface and the substrate can be recorded as the second distance. The first distance can be greater than the second distance, and when the connecting edge is an arc, the carrier blocking layer can block part of the connecting edge. Alternatively, the first distance and the second distance can be the same, and when the connecting edge is an arc, the carrier blocking layer can block the entire connecting edge. Alternatively, the first distance can also be smaller than the second distance, that is, the first surface of the nanoantenna is closer to the substrate than the second surface of the carrier blocking layer. At this time, regardless of whether the connecting edge is an arc or a line segment, the carrier blocking layer can isolate the electrode and the connecting edge, which can effectively prevent the carriers provided by the electrode from migrating from the space above the connecting edge to the connecting edge, thereby preventing the carriers that migrate to the connecting edge from being unable to recombine, thereby increasing the amount of recombined carriers and improving the electro-optical conversion efficiency.

[0012] Exemplarily, the nanoantenna may be made of a conductive material, such as but not limited to a conductive metal or a conductive metal alloy, etc. The conductive metal and the conductive metal alloy may include but not limited to at least one of gold, silver, aluminum, and copper.

[0013] The carrier blocking layer can be made of a material that can prevent the migration of carriers, such as but not limited to semiconductor materials or insulating materials. The specific material can be selected according to the actual situation and is not limited here. Among them, when the material for making the carrier blocking layer includes an insulating layer, the insulating material can include but is not limited to photoresist. Photoresist is divided into positive photoresist and negative photoresist. Positive photoresist will not crosslink under the irradiation of a specific light source, and crosslinking will occur in places not irradiated by the specific light source, while negative photoresist will not crosslink under the irradiation of no specific light source, and crosslinking will occur in places irradiated by the specific light source. The uncrosslinked part can be washed away by developing treatment and the crosslinked part is left, thereby realizing patterning and obtaining the carrier blocking layer. Therefore, using photoresist to make the carrier blocking layer can simplify the difficulty of making the carrier blocking layer, and can also achieve precise control of the size.

[0014] The selection of the material for the light-emitting layer, especially the material for the photon generating layer therein, can be determined based on the light-emitting wavelength to achieve the purpose of emitting light of different colors. Other film layers in the light-emitting layer, such as the electron injection layer, may be made of, but not limited to, magnesium fluoride, aluminum oxide, etc., the hole injection layer may be made of, but not limited to, hexaazatriphenylhexanecarbonitrile, polyester copper carbonate, etc., the electron transport layer may be made of, but not limited to, tris(8-hydroxyquinoline)aluminum, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, etc., the hole transport layer may be made of, but not limited to, aromatic diamines, 2,2'-dimethyl-N,N'-di-1-naphthyl-N,N'-diphenyl[1,1'-biphenyl]-4,4'-diamine, etc., the electron blocking layer may be made of, but not limited to, 9,9'-(1,3-phenyl)di-9H-carbazole, aluminum gallium nitrogen, etc., and the hole blocking layer may be made of, but not limited to, lithium fluoride, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, etc.

[0015] Furthermore, the surface of the light-emitting layer facing away from the substrate can be recorded as a third surface, and the third surface can be set to a flat surface. This can facilitate the production of electrodes and reduce the light-emitting deviation caused by the unevenness of the third surface, thereby improving the light-emitting effect of the light-emitting device; it can also avoid the distance between the electrode and the nanoantenna at certain positions being closer due to the unevenness of the third surface, thereby avoiding the generation of a higher leakage current due to the close distance between the electrode and the nanoantenna, thereby avoiding leakage.

[0016] In the second aspect, the embodiment of the present application further provides a pixel array, which includes a plurality of pixels, each pixel can be arranged in an array, and each pixel can include a light-emitting device as described in the first aspect above, so that when the light-emitting efficiency and electro-optical conversion efficiency of the light-emitting device are improved, the light-emitting efficiency and electro-optical conversion efficiency of the pixel array can be improved. Since the principle of each light-emitting device in the pixel array to solve the problem is similar to the principle of the aforementioned light-emitting device to solve the problem, the implementation and technical effects of each light-emitting device in the pixel array can refer to the implementation and technical effects of the aforementioned light-emitting device, and the repeated parts will not be repeated.

[0017] Exemplarily, the pixel array may further include a plurality of first signal lines and a plurality of second signal lines, each first signal line is connected to each nanoantenna in each row of pixels, and different first signal lines are connected to nanoantennas in different rows of pixels; when each electrode is separately and independently arranged, each second signal line is connected to each electrode in each column of pixels, and different second signal lines are connected to electrodes in different columns of pixels. Alternatively, each first signal line is connected to each nanoantenna in each column of pixels, and different first signal lines are connected to nanoantennas in different columns of pixels; each second signal line is connected to each electrode in each row of pixels, and different second signal lines are connected to electrodes in different rows of pixels.

[0018] The pixel array may also include a driver, and the first signal line and the second signal line are both connected to the driver. For example, each first signal line is connected to each nanoantenna in each row of pixels, and different first signal lines are connected to nanoantennas in different rows of pixels. The driver can provide a first voltage to the corresponding nanoantenna in the i-th row through the first signal line, and provide a second voltage to the corresponding electrode in the j-th column through the second signal line, so that the pixel in the i-th row and the j-th column emits light, and by adjusting the first voltage or the second voltage, the luminous intensity of the pixel can also be controlled, thereby adjusting the luminous effect of the pixel array. Among them, the driver can be provided with one, and the driver is connected to each first signal line and each second signal line, and the luminescence of each pixel can be controlled by one driver; or the driver can also be provided with multiple, and multiple luminous areas can be divided, and multiple pixels and a driver are provided in each luminous area. In each luminous area, the driver controls the corresponding pixels to emit light through the corresponding first signal line and the second signal line, thereby realizing regional control. And the drivers located in the light-emitting areas of the same column can be cascaded, and when the pixel array can also include a controller, the controller can be connected to the first-level driver or the last-level driver in the cascaded drivers, so that the controller can send control data to each first-level driver or the last-level driver, and the control data can include data packets corresponding to each cascaded driver. The control data can be transmitted in each cascaded driver, so that each driver can extract the corresponding data packet and control the light emission of the connected pixels.

[0019] Of course, when the electrode is used as a cathode, the cathodes of each pixel can have the same potential, so the cathode can be set on the entire surface, that is, the cathodes of each pixel can be connected together, which can reduce the difficulty of manufacturing the cathode and improve the manufacturing efficiency. In addition, only one second signal line connected to the electrode can be set, which can reduce the number of second signal lines set and simplify the structural complexity of the pixel array. Correspondingly, the driver can adjust the luminous intensity of the corresponding pixel by adjusting the magnitude of the first voltage provided by each first signal line to achieve control of the luminescence.

[0020] Among them, no matter the nano-antenna is reused as an anode or a cathode, the nano-antenna and the first signal line can be made of the same conductive material and arranged in the same layer, so that the nano-antenna and the first signal line can be simultaneously manufactured in one process, so as to reduce the process steps of the pixel array, simplify the manufacturing process, and facilitate the effective connection between the nano-antenna and the corresponding first signal line. Of course, the first signal line and the nano-antenna can also be made of different conductive materials, which is not limited here.

[0021] Exemplarily, the pixel array may also include a pixel defining structure, in which an opening is provided, each opening corresponds to each pixel, and the pixel defining structure may be used to achieve the spacing of each pixel to avoid interference between adjacent pixels. In this case, the materials used to make the light-emitting layer in some pixels may be different, and the size of the nanoantenna in each pixel may be the same, so that by selecting different materials to make the light-emitting layer, some pixels may emit light of different colors. Alternatively, the materials used to make the light-emitting layer in each pixel may be the same, but the sizes of the nanoantennas in some pixels may be different. By setting the size of the nanoantenna and based on the correspondence between the size of the nanoantenna and the resonant wavelength, some pixels may still emit light of different colors. It should be understood that the size of the nanoantenna is proportional to the resonant wavelength. The larger the size, the longer the resonant wavelength, and vice versa. Therefore, by designing the size of the nanoantenna, the nanoantenna can emit light of the corresponding wavelength.

[0022] Of course, the pixel array may not have a pixel defining structure, so that the light-emitting layer can be arranged on the entire surface, that is, the light-emitting layers in each pixel are connected together, and there is no need for a pixel defining structure to separate the light-emitting layers, and the light-emitting layers in different pixels are made of the same material, so that the color of the light emitted by the entire light-emitting layer is the same. At this time, by setting the size of the nanoantenna in each pixel, some pixels can also emit light of different colors. Such a setting can effectively reduce the difficulty of making the light-emitting layer, and can also reduce the number of structures in the pixel array, simplify the structure and manufacturing process of the pixel array, and thus reduce the manufacturing cost of the pixel array.

[0023] In a third aspect, an embodiment of the present application also provides a method for manufacturing a light-emitting device, forming a nanoantenna on a substrate; forming a carrier blocking layer on the substrate on which the nanoantenna is formed, wherein a surface of the nanoantenna facing away from the substrate is a first surface, and an edge connecting the first surface and the side of the nanoantenna is a connecting edge, and the carrier blocking layer blocks at least a portion of the connecting edge; forming a light-emitting layer on the carrier blocking layer and the nanoantenna; and forming an electrode on the light-emitting layer.

[0024] In this way, when the electrode drives the light-emitting layer to generate photons, the photons reach the interface between the nano-antenna and the light-emitting layer to generate surface plasmons, and the surface plasmons will be conducted along the nano-antenna, and radiate outward on the surface of the nano-antenna facing the substrate, making it easier for the photons in the light-emitting layer that were originally difficult to radiate outward to radiate outward, thereby increasing the amount of photons radiated outward, thereby improving the luminous efficiency of the light-emitting device. In addition, the carrier blocking layer used to prevent the migration of carriers (holes or electrons) provided by the electrode blocks at least part of the connecting edge, which can reduce the amount of carriers migrating to the connecting edge, forcing the carriers provided by the electrode to migrate to the first surface of the nano-antenna, increasing the probability of carrier recombination, and then increasing the amount of recombined carriers, thereby improving the electro-optical conversion efficiency, achieving both improving the luminous efficiency of the light-emitting device and improving the electro-optical conversion efficiency.

[0025] Exemplarily, when forming the carrier blocking layer, the steps may specifically include: using an insulating material or a semiconductor material to deposit a first film layer on a substrate formed with a nano-antenna, the first film layer covering the substrate and the nano-antenna; processing the first film layer to expose the nano-antenna, and the first film layer shielding at least a portion of the connecting edge to form the carrier blocking layer. In this way, the carrier blocking layer may be made of an insulating material or a semiconductor material.

[0026] The processing of the first film layer may include: when the first film layer is a photoresist layer, etching and developing the photoresist layer using photolithography technology. In this way, the carrier blocking layer can be obtained by photolithography technology. This method is not only simple and easy to implement, but also can accurately control the structure and shape of the carrier blocking layer to meet the design requirements of the carrier blocking layer.

[0027] Furthermore, when depositing the photoresist layer, spin coating, spray coating, scraping and the like can be adopted. Furthermore, the photoresist layer can be deposited slightly thicker, and after etching and developing the photoresist layer, the thickness of the remaining photoresist layer is adjusted, and finally a carrier blocking layer is formed, so as to meet the design requirements of the carrier blocking layer. Based on this, adjusting the thickness of the remaining photoresist layer can include: using a wet etching technique to adjust the thickness of the remaining photoresist layer. That is, using a wet etching method, selecting an etching solution with a suitable etching selectivity ratio, etching the remaining photoresist layer to reduce the thickness of the photoresist layer and form a carrier blocking layer.

[0028] In addition, after forming the carrier blocking layer and before forming the light-emitting layer, the surface of the substrate on which the carrier blocking layer and the nanoantenna are formed can be cleaned to remove impurities remaining on the surface of the substrate on which the carrier blocking layer and the nanoantenna are formed, such as but not limited to etching solution remaining on the surface of the light-emitting device during wet etching, so as to maintain the cleanliness of the surface of the light-emitting device so as to avoid adverse effects on the performance of the light-emitting device when the light-emitting layer and the electrode are subsequently formed.

[0029] Illustratively, when forming the nanoantenna, the light-emitting layer and the electrode, any method known to those skilled in the art for obtaining the nanoantenna, the light-emitting layer and the electrode can be used, such as but not limited to physical vapor deposition for making the nanoantenna, solution deposition or evaporation for making the light-emitting layer, and physical vapor deposition for making the electrode, which is not limited here.

[0030] In a fourth aspect, an embodiment of the present application further provides an electronic device, which may include: a housing and a pixel array as described in the second aspect, wherein the pixel array is disposed in the housing. On the basis that the pixel array can improve the luminous efficiency and the electro-optical conversion efficiency, the electronic device including the pixel array can also improve the luminous efficiency and the electro-optical conversion efficiency, thereby improving the performance of the electronic device. Since the principle of solving the problem by the electronic device is similar to the principle of solving the problem by the aforementioned pixel array, the implementation and technical effects of the electronic device can refer to the implementation and technical effects of the aforementioned pixel array, and the repeated parts will not be repeated. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application;

[0032] Figure 2 It is a schematic diagram of the structure of a light emitting device in the current technology;

[0033] Figure 3 A schematic diagram of the shape of the nano-antenna provided in an embodiment of the present application;

[0034] Figure 4 A schematic diagram of the structure of a light emitting device provided in an embodiment of the present application;

[0035] Figure 5 A schematic diagram of the positional relationship between a carrier blocking layer and a nano-antenna provided in an embodiment of the present application;

[0036] Figure 6 A schematic diagram of the positional relationship between another carrier blocking layer and a nano-antenna provided in an embodiment of the present application;

[0037] Figure 7 A schematic diagram of the structure of another light-emitting device provided in an embodiment of the present application;

[0038] Figure 8 A schematic diagram of the structure of another light-emitting device provided in an embodiment of the present application;

[0039] Fig. 9 A schematic diagram of the structure of another light emitting device provided in an embodiment of the present application;

[0040] Fig.10 A schematic diagram of the structure of a pixel array provided in an embodiment of the present application;

[0041] Fig.11 For along Fig.10 A cross-sectional view shown in the x1-x2 direction;

[0042] Fig.12 A schematic diagram of the structure of another pixel array provided in an embodiment of the present application;

[0043] Fig.13 A schematic diagram of a manufacturing process of a light-emitting device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0044] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings.

[0045] It should be noted that the same reference numerals in the drawings of this application represent the same or similar structures, and thus their repeated description will be omitted. The words expressing positions and directions described in this application are all explained using the drawings as examples, but they can be changed as needed, and the changes are included in the protection scope of this application. The drawings of this application are only used to illustrate the relative position relationship and do not represent the true proportion.

[0046] In order to facilitate understanding of the technical solution provided by the embodiments of the present application, the application scenario of the embodiments of the present application is first explained below.

[0047] The light-emitting device provided in the embodiment of the present application can be widely used in electronic devices with display functions, which can include display devices and lighting arrays, etc. The display devices can include mobile phones, tablet computers, laptops, super mobile personal computers, netbooks, personal digital assistants, wearable devices (such as but not limited to smart watches), virtual reality display devices, augmented reality display devices, and mobile electronic devices mounted on vehicles, etc. The lighting array can include lighting arrays of equipment such as microscopes, precision measurement and precision manufacturing equipment, etc. The embodiment of the present application does not impose any special restrictions on the specific form of the above-mentioned electronic devices.

[0048] Figure 1 The schematic diagram of the structure of the light emitting device when it is used in an electronic device is shown as an example. Figure 1As shown, the electronic device includes a housing 100 and a light-emitting device 200, and the light-emitting device 200 is arranged in the housing 100. In addition, the electronic device may also include other structures for realizing the functions of the electronic device, such as but not limited to a processor, a radio frequency circuit, a power supply, a memory, etc., which can be specifically arranged according to actual needs and are not limited here. Among them, the light-emitting device can be a self-luminous device, such as but not limited to an electroluminescent device. The light-emitting device generally includes: a substrate, and an anode, a light-emitting layer and a cathode stacked on the substrate. The anode can provide holes to the light-emitting layer, and the cathode can provide electrons to the light-emitting layer. The holes and electrons meet and recombine in the light-emitting layer to generate energy, which can excite the electrons in the light-emitting layer to undergo energy level transition, from a low energy level to a high energy level. Due to the instability of the high energy level, the electrons at the high energy level will migrate back to the low energy level, and release energy in the form of photons when migrating back, thereby realizing the light emission of the light-emitting device. Therefore, the luminous color of the light-emitting device is related to the material of the light-emitting layer, that is, the material of the light-emitting layer determines the energy level of the electron transition, thereby determining the wavelength of the released photons, and ultimately determining the luminous color. However, since only a small number of the generated photons can be emitted through spontaneous radiation, a large number of photons will remain in the light-emitting layer and be converted into heat and lost, resulting in low luminous efficiency of the light-emitting device.

[0049] In order to solve this problem, the surface plasmon effect of nano-antennas can be used to improve the luminous efficiency of light-emitting devices. The specific implementation methods may include: Figure 2 As shown, a nano-antenna 20, a light-emitting layer 30 and an electrode 40 are sequentially arranged on a substrate 10. The nano-antenna 20 is made of a conductive metal material (such as but not limited to gold, silver, aluminum or copper, etc.), so the nano-antenna 20 is a conductor. The conductor has a resonance effect in the optical frequency band, which can enhance the intensity and speed of light radiation. When the photons generated by the light-emitting layer 30 are emitted to the interface between the nano-antenna 20 and the light-emitting layer 30, surface plasmons are generated at the interface, and the surface plasmons can be conducted along the nano-antenna 20, and on the surface of the nano-antenna 20 facing away from the light-emitting layer 30 (such as Figure 2 The lower surface of the nano-antenna 20 in the light-emitting layer 30 radiates outward, making it easier for photons in the light-emitting layer 30 that were originally difficult to radiate outward to radiate outward, thereby improving the luminous efficiency of the light-emitting device.

[0050] The size of the nanoantenna 20 is proportional to the resonant wavelength. The larger the size, the longer the resonant wavelength, and vice versa. For example, when the length of the nanoantenna 20 is 80nm, the corresponding central wavelength of the resonant wave is 450nm, when the length of the nanoantenna 20 is 100nm, the corresponding central wavelength of the resonant wave is 550nm, and when the length of the nanoantenna 20 is 120nm, the corresponding central wavelength of the resonant wave is 650nm. The shape of the nanoantenna 20 is related to the polarization direction of the resonant wave, and the extension direction of the nanoantenna 20 is the polarization direction of the resonant wave. Figure 3 As shown, in (a), the nanoantenna 20 is in the shape of a strip extending in the x direction, so the polarization direction of the resonant wave is in the x direction; in (b), the nanoantenna 20 is in the shape of a strip extending in the y direction, so the polarization direction of the resonant wave is in the y direction; in (c), the nanoantenna 20 is circular and has no polarization direction because there is no advantageous extension direction; in (d), the nanoantenna 20 is elliptical, so the polarization direction of the resonant wave is in the x direction where the maximum diameter is located and the y direction where the minimum diameter is located; in (e) and (f), the nanoantenna 20 is in the shape of a spiral, so the polarization direction of the resonant wave is the spiral direction of the nanoantenna 20. Therefore, the shape of the nanoantenna 20 determines the directional characteristics of the light radiated outward by the nanoantenna 20, and the desired light emission direction can be achieved by setting a nanoantenna 20 of a specific shape. Based on this, the nanoantenna 20 can be integrated with the anode or cathode. According to the wavelength and polarization direction of the light radiated outward as required, the anode or cathode can be made into a nanoantenna 20 of corresponding size and shape, so that the nanoantenna 20 can not only improve the luminous efficiency, but also can be reused as an anode or cathode to simplify the structure of the light-emitting device.

[0051] However, in Figure 2 In the figure, the dotted arrows represent the migration of holes, and the solid arrows represent the migration of electrons. Taking the electrode 40 as the anode to provide holes and the nanoantenna 20 as the cathode to provide electrons as an example, when the holes migrate from the electrode 40 to the nanoantenna 20, they will migrate along the shortest path. For example, the holes provided at the position corresponding to the nanoantenna 20 in the electrode 40 migrate almost along a straight line to the upper surface of the nanoantenna 20, while the holes provided at other positions in the electrode 40 will migrate along the paths indicated by the dotted arrows n1 and n2 to the connecting edge between the side and the upper surface of the nanoantenna 20 (such as Figure 2 The electrons also migrate from the upper surface of the nanoantenna 20 to the electrode 40 almost in a straight line, so that the electrons and holes on the upper surface of the nanoantenna 20 can meet and recombine, while the holes at the connecting edge have no electrons to recombine, resulting in energy waste and reduced electro-optical conversion efficiency.

[0052] Based on this, the embodiments of the present application provide a light-emitting device, a manufacturing method thereof, a pixel array and an electronic device, which can not only improve the light-emitting efficiency but also improve the electro-optical conversion efficiency.

[0053] Figure 4 The schematic diagram of the structure of the light emitting device in the first embodiment provided in the present application is shown in FIG. Figure 4 As shown, the light-emitting device includes: a substrate 10, a nano-antenna 20 and a carrier blocking layer 50 disposed on the substrate 10, a light-emitting layer 30 disposed on the nano-antenna 20 and the carrier blocking layer 50, and an electrode 40 disposed on the light-emitting layer 30. When the nano-antenna 20 is reused as an anode, the electrode 40 disposed on the light-emitting layer 30 can be regarded as a cathode, or the nano-antenna 20 can also be reused as a cathode, in which case the electrode 40 disposed on the light-emitting layer 30 can be regarded as an anode, and Figure 4 The example in which the nano-antenna 20 is reused as an anode is shown. The surface of the nano-antenna 20 facing away from the substrate 10 is the first surface b1, and the nano-antenna 20 also has a side surface b0. The edge between the first surface and the side surface b0 is called the connecting edge Y0 (eg Figure 4 As shown in the dotted circle in the figure, the carrier blocking layer 50 blocks at least part of the connecting edge Y0 of the nano-antenna 20. In this way, when the electrode 40 drives the light-emitting layer 30 to generate photons, the photons reach the interface between the nano-antenna 20 and the light-emitting layer 30 to generate surface plasmons, and the surface plasmons are conducted along the nano-antenna 20, and on the surface of the nano-antenna 20 facing the substrate 10 (i.e. Figure 4 The carrier blocking layer 50 can prevent the carriers provided by the electrode 40 from migrating to the connecting edge Y0 of the nano-antenna 20, and force the carriers provided by the electrode 40 to migrate to the first surface b1 of the nano-antenna 20, such as Figure 4 The migration path indicated by the dashed arrow in the middle increases the probability of carrier recombination, thereby increasing the amount of recombinated carriers, thereby improving the electro-optical conversion efficiency.

[0054] It should be understood that when the nano-antenna 20 has multiple side surfaces b0, the connecting edge Y0 refers to the edge between each side surface b0 and the first surface b1, so the nano-antenna 20 has multiple connecting edges Y0, and the connecting edges Y0 correspond to the side surfaces b0 one by one. Figure 5 As shown, Figure 5 Can be seen as Figure 4 A top view of Figure 5 The nano-antenna 20 shown in FIG. 1 is exactly its first surface b1. Figure 5The nano-antenna 20 shown in FIG. 1 has four side surfaces b0, so the nano-antenna has four connecting edges Y0. For one of the side surfaces b0: Figure 5 As shown, if the angle formed by the first surface b1 and the side surface b0 is a right angle, an acute angle or an obtuse angle, then along the direction perpendicular to the first surface b1 (i.e., perpendicular to Figure 5 When looking at the light emitting device (from the paper side in FIG. 1 ), the connecting edge Y0 between the first surface b1 and the side surface b0 is a line segment, and the carrier blocking layer 50 can completely cover the line segment, such as Figure 5 As shown in the dashed box 1 in FIG. 1 , or the carrier blocking layer 50 blocks the portion in the line segment, as shown in FIG. Figure 5 As shown in the dashed box 2 in . Alternatively, refer to Figure 6 As shown in FIG. 1 , if the angle formed by the first surface b1 and the side surface b0 is a rounded angle, then along the first direction (i.e., perpendicular to Figure 6 When looking at the light emitting device (from the paper side in FIG. 1 ), the connecting edge Y0 between the first surface b1 and the side surface b0 is an arc segment, and the carrier blocking layer 50 can block a portion of the arc segment, such as Figure 6 As shown in (a) in FIG. 1 , or the carrier blocking layer 50 completely blocks the arc, as shown in FIG. Figure 6 As shown in (b) of . Figure 5 and Figure 6 In order to avoid the drawing being too complicated, only the carrier blocking layer 50 and the nanoantenna 20 are shown in the figure, and if the planes perpendicular to the first surface b1 and the side surface b0 are respectively called reference planes, the first direction is the direction perpendicular to the reference plane.

[0055] Reference Figure 4 As shown, the distance between the first surface b1 and the substrate 10 is the first distance L1, the side surface of the carrier blocking layer 50 facing away from the substrate 10 is the second surface b2, and the distance between the second surface b2 and the substrate 10 is the second distance L2. The second distance L2 is greater than the first distance L1, so that the second surface b2 of the carrier blocking layer 50 is farther away from the substrate 10 than the first surface b1 of the nanoantenna 20. In this way, the carrier blocking layer 50 can isolate the electrode 40 and the connecting edge Y0, thereby effectively preventing the carriers provided by the electrode 40 from migrating from the space above the connecting edge Y0 to the connecting edge Y0, thereby increasing the amount of recombined carriers and improving the electro-optical conversion efficiency.

[0056] Reference Figure 6 As shown in (a), the first distance L1 is greater than the second distance L2, so that the carrier blocking layer 50 blocks part of the connecting edge Y0, which can reduce the amount of carriers provided by the electrode 40 migrating to the connecting edge Y0 to a certain extent, thereby increasing the amount of recombined carriers to a certain extent. Figure 6As shown in (b), the first distance L1 is equal to the second distance L2, so that the carrier blocking layer 50 completely blocks the connecting edge Y0, which can reduce the amount of carriers provided by the electrode 40 migrating to the connecting edge Y0, thereby increasing the amount of recombined carriers.

[0057] Continue to see Figure 4 As shown, when the carrier blocking layer 50 does not block the side b0 of the nano-antenna 20, a certain gap is created between the carrier blocking layer 50 and the substrate 10, and a filling layer 90 can be disposed at the gap. The material of the filling layer 90 can be different from the material of the nano-antenna 20 to avoid adverse effects on the function of the nano-antenna 20, and the amount of the carrier blocking layer used can be reduced. When the price of the material of the carrier blocking layer is high but the price of the material of the filling layer is low, the production cost of the light-emitting device can also be reduced.

[0058] Exemplarily, the carrier blocking layer 50 can be made of a material that can prevent carrier migration, such as but not limited to a semiconductor material or an insulating material, which can be selected according to actual conditions and is not limited here. Among them, when the material for making the carrier blocking layer 50 includes an insulating layer, the insulating material can include but is not limited to photoresist. Using photoresist to make the carrier blocking layer 50 can simplify the difficulty of making the carrier blocking layer 50, and can also achieve precise control of the size.

[0059] The surface of the light-emitting layer 30 facing away from the substrate 10 can be recorded as the third surface b3. The third surface b3 can be set to a flat surface, which can facilitate the production of the electrode 40 and reduce the light-emitting deviation caused by the unevenness of the third surface b3, thereby improving the light-emitting effect of the light-emitting device; it can also avoid the distance between the electrode 40 and the nanoantenna 20 at certain positions being closer due to the unevenness of the third surface b3, thereby avoiding the generation of a higher leakage current due to the close distance between the electrode 40 and the nanoantenna 20, thereby avoiding leakage.

[0060] Furthermore, the light-emitting layer 30 may only include the photon generating layer. Of course, the light-emitting layer 30 may also be a multilayer structure formed by stacking multiple film layers. In this case, the multilayer structure may include: an electron injection layer, a hole injection layer, an electron transport layer, a hole transport layer, an electron blocking layer, a hole blocking layer and a photon generating layer. The stacking order of these film layers may be set according to actual conditions; wherein, the function of the hole injection layer includes reducing the potential barrier of injecting holes and improving the mobility of holes, the function of the electron injection layer includes reducing the potential barrier of injecting electrons and improving the mobility of electrons, the function of the hole transport layer includes improving the mobility of holes, the function of the electron transport layer includes improving the mobility of electrons, the function of the hole blocking layer includes preventing the transmission of holes and reducing the mobility of holes, the function of the electron blocking layer includes preventing the transmission of electrons and reducing the mobility of electrons, and the function of the photon generating layer includes: providing space for the recombination of holes and electrons and generating photons. By setting the multilayer structure, electrons and holes can be effectively and quickly migrated to the photon generating layer, which is beneficial to improving the recombination rate of holes and electrons, and further beneficial to improving the electro-optical conversion efficiency.

[0061] The nano-antenna 20 can be made of a conductive material, such as but not limited to a conductive metal or a conductive metal alloy, etc. The conductive metal and the conductive metal alloy can include but not limited to at least one of gold, silver, aluminum, and copper. Figure 4 The light is emitted outwardly (as indicated by the bold black arrow in the figure), that is, the light-emitting surface of the light-emitting device is located on the side of the substrate 10 away from the nano-antenna 20, so the substrate 10 can be made of transparent material to avoid affecting the light-emitting effect.

[0062] Figure 7 The structure of the light emitting device in the second embodiment provided in the present application is schematically shown. The structure of the light emitting device in the second embodiment is substantially similar to that of the light emitting device described in the first embodiment. Figure 7 As shown, Figure 7 Is to connect the edges (such as Figure 7 The example of the arc is shown in the dashed circle. The difference includes: the carrier blocking layer 50 not only blocks at least a portion of the connecting edge, but also blocks at least a portion of the side b0 of the nano-antenna 20, but the carrier blocking layer 50 does not block the first surface b1 of the nano-antenna 20. When the carrier blocking layer 50 blocks a portion of the side b0 of the nano-antenna 20, as shown in FIG. Figure 7As shown in (b) of FIG. 1 , a filling layer 90 may be provided between the carrier blocking layer 50 and the substrate 10, so that the usage of the carrier blocking layer 50 can be reduced. When the price of the material for making the carrier blocking layer 50 is high but the price of the material for making the filling layer 90 is low, the manufacturing cost of the light-emitting device can also be reduced. Alternatively, when the carrier blocking layer 50 completely blocks the side b0 of the nano-antenna 20, as shown in FIG. Figure 7 As shown in (a) in FIG. 1 , there is no need to set the filling layer 90 , which can reduce the manufacturing steps of the light-emitting device, simplify the manufacturing process, and improve the manufacturing efficiency.

[0063] Among them, the similarities between the structure of the light-emitting device in the second embodiment and the structure of the light-emitting device introduced in the first embodiment mentioned above can be referred to the light-emitting device introduced in the first embodiment mentioned above, and the repeated parts will not be repeated.

[0064] Figure 8 The structure of the light emitting device in the third embodiment provided in the present application is schematically shown. The structure of the light emitting device in the third embodiment is substantially similar to that of the light emitting device described in the first embodiment. Figure 8 As shown, the differences include: the carrier blocking layer 50 not only blocks the connecting edge of the nano-antenna 20 (such as Figure 7 At least part of the first surface b1 (shown in the dotted circle) is also shielded from the area connected to the connecting edge in the first surface b1 (referred to as the shielded area), so that the carrier blocking layer 50 overlaps with the orthographic projection of the nanoantenna 20 on the substrate 10, and the width L0 of the overlapping part (i.e., the shielded area) is greater than 0 and not greater than 100nm. In this way, the carrier blocking layer 50 can prevent the carriers provided by the electrode 40 from migrating to the connecting edge, and force the carriers provided by the electrode 40 to migrate to the exposed area of ​​the first surface b1 except the shielded area, effectively increasing the probability of recombination of carriers of different polarities, increasing the amount of recombinated carriers, and thus improving the electro-optical conversion efficiency.

[0065] Among them, the similarities between the structure of the light-emitting device in the third embodiment and the structure of the light-emitting device introduced in the first embodiment mentioned above can be referred to the light-emitting device introduced in the first embodiment mentioned above, and the repeated parts will not be repeated.

[0066] Fig. 9 The structure of the light emitting device in the fourth embodiment provided in the present application is schematically shown. The structure of the light emitting device in the fourth embodiment is substantially similar to the structure of the light emitting device described in the first embodiment. Fig. 9 As shown, the differences include: the carrier blocking layer 50 not only blocks the connecting edge of the nano-antenna 20 (such as Fig. 9The carrier blocking layer 50 completely wraps the connecting edge, effectively preventing the carriers provided by the electrode 40 from migrating to the connecting edge, and forcing the carriers provided by the electrode 40 to migrate to the exposed area in the first surface b1, thereby effectively improving the electro-optical conversion efficiency. Fig. 9 The structure in can increase the effective current in the light-emitting device by 100 times, thereby improving both the light-emitting efficiency of the light-emitting device and the electro-optical conversion efficiency. For the setting of the blocked area in the first surface b1, please refer to the description in the third embodiment, and for the setting of the blocked side b0, please refer to the description in the second embodiment, which will not be described in detail here. In addition, the similarities between the structure of the light-emitting device in the fourth embodiment and the structure of the light-emitting device introduced in the first embodiment can be referred to the light-emitting device introduced in the first embodiment, and the repeated parts will not be repeated.

[0067] Fig.10 The schematic diagram of the structure of the pixel array in the fifth embodiment provided in the present application is shown in FIG. Fig.10 As shown, the pixel array may include: a plurality of pixels p arranged in an array, each pixel p may include a nano-antenna 20, a carrier blocking layer 50, a light-emitting layer 30 and an electrode 40, wherein the arrangement of the nano-antenna 20, the carrier blocking layer 50, the light-emitting layer 30 and the electrode 40 may refer to any one of the first to fourth embodiments described above, and the repeated parts will not be repeated. Fig.10 The structure in is too complicated. Fig.10 Only the nano-antenna 20 , the light-emitting layer 30 , the electrode 40 , the first signal line s1 , the second signal line s2 , and the driver 70 are shown.

[0068] Reference Fig.10 and Fig.11 As shown, the light-emitting layer 30 can be arranged on the whole surface, that is, the light-emitting layers 30 in each pixel p are connected together, and there is no need for a pixel-defining structure to separate the light-emitting layers 30. In addition, the light-emitting layers 30 in different pixels p are made of the same material, so that the color of the light emitted by the entire light-emitting layer 30 is the same. At this time, by setting the size of the nano-antenna 20 in each pixel p, such as adjusting Fig.10 The lengths d1, d2, d3 and d4 of the nanoantennas 20 in the four pixels p shown in the figure are all different, which can also make each pixel p emit light of different colors. Such an arrangement can effectively reduce the difficulty of manufacturing the light-emitting layer 30, and can also reduce the number of structures in the pixel array, simplify the structure and manufacturing process of the pixel array, and thus reduce the manufacturing cost of the pixel array.

[0069] Reference Fig.10 As shown, the pixel array may also include a plurality of first signal lines s1 and a plurality of second signal lines s2, each first signal line s1 is connected to each nano-antenna 20 in each row of pixels p, and different first signal lines s1 are connected to the nano-antennas 20 in different rows of pixels p; when each electrode 40 is separately and independently provided, each second signal line s2 is connected to each electrode 40 in each column of pixels p, and different second signal lines s2 are connected to the electrodes 40 in different columns of pixels p. Alternatively, each first signal line s1 is connected to each nano-antenna 20 in each column of pixels p, and different first signal lines s1 are connected to the nano-antennas 20 in different columns of pixels p; each second signal line s2 is connected to each electrode 40 in each row of pixels p, and different second signal lines s2 are connected to the electrodes 40 in different rows of pixels p, which are not shown in the figure. Fig.10 It is only for illustrating the relative position and connection relationship of each structure and does not represent the actual shape and size of each structure.

[0070] Furthermore, regardless of whether the nano-antenna 20 is reused as an anode or a cathode, the nano-antenna 20 and the first signal line s1 can be made of the same conductive material and arranged in the same layer, so that the nano-antenna 20 and the first signal line s1 can be simultaneously manufactured in one process, so as to reduce the process steps of the pixel array, simplify the manufacturing process, and facilitate the effective connection between the nano-antenna 20 and the corresponding first signal line s1. Of course, the first signal line s1 and the nano-antenna 20 can also be made of different conductive materials, which is not limited here. It should be understood that the two structures arranged in the same layer refer to the two structures being manufactured in one manufacturing process.

[0071] The pixel array may further include a driver 70, see Fig.10 As shown, the driver 70 may be provided with one, and when the electrodes 40 in each pixel p are separately and independently provided, a plurality of second signal lines s2 are provided correspondingly, and the driver 70 is connected to each first signal line s1 and each second signal line s2, and the light emission of each pixel p can be controlled by one driver 70. Alternatively, when the electrode 40 is used as a cathode, the cathodes of each pixel p may have the same potential, so the cathode may be provided on the entire surface, that is, the cathodes of each pixel p may be connected together, which can reduce the difficulty of manufacturing the cathode and improve the manufacturing efficiency. In addition, one second signal line s2 connected to the electrode 40 may be provided, which can reduce the number of second signal lines s2 provided and simplify the structural complexity of the pixel array. Correspondingly, the driver 70 is connected to each first signal line s1 and the second signal line s2, and by adjusting the magnitude of the first voltage provided by each first signal line s1, the light emission intensity of the corresponding pixel p is adjusted to achieve the control of light emission. Among them, the second signal line s2 connected to the electrode 40 may be provided on the same layer as the first signal line s1, and the second signal line s2 is connected to the electrode 40 provided on the entire surface through a through hole.

[0072] Of course, refer to Fig.12 As shown, the driver 70 may be provided in plurality, and may be divided into a plurality of light-emitting areas m2, each light-emitting area m2 being provided with a plurality of pixels p and a driver 70, and in each light-emitting area m2, the driver 70 controls the corresponding pixels p to emit light through the corresponding first signal line s1 and the second signal line s2, thereby realizing area control. And the drivers 70 in the light-emitting areas m2 in the same column may be cascaded, and when the pixel array may further include a controller 80, the controller 80 may be connected to the first-level driver or the last-level driver in the cascaded drivers 70, so that the controller 80 may send control data to the first-level driver or the last-level driver, and the control data may include data packets corresponding to the cascaded drivers 70, and the control data may be transmitted in the cascaded drivers 70, so that each driver 70 may extract the corresponding data packet and control the light emission of the connected pixels p. It should be understood that in Fig.12 In order to distinguish the first signal line s1 from the second signal line s2, the first signal line s1 is marked with a solid line and the second signal line s2 is marked with a dotted line. Fig.12 In the figure, the squares filled with sparse black dots represent pixels, and the specific structure within each pixel is not shown.

[0073] Fig.13 The schematic diagram of the manufacturing process of the light emitting device in the sixth embodiment provided in the present application is shown in FIG. Fig.13 As shown, the manufacturing process of the light emitting device may include:

[0074] Step 1: Fig.13 As shown in (a), a nano-antenna 20 is formed on a substrate 10 by using, but not limited to, a physical vapor deposition method;

[0075] Step 2: If Fig.13 As shown in (b), a photoresist m1 is deposited on the substrate 10 formed with the nano-antenna 20 by using, but not limited to, spin coating, spray coating or scraping coating, and the photoresist m1 covers the substrate 10 and the nano-antenna 20;

[0076] When the pixel array includes a first signal line and a second signal line, and the first signal line is connected to the nano-antenna 20, the photoresist m1 not only covers the nano-antenna 20, but also covers the first signal line. In addition, the insulating material covering the first signal line and the photoresist m1 covering the nano-antenna 20 can be the same material or different materials.

[0077] Step 3: If Fig.13As shown in (c) of FIG. 1 , the photoresist m1 is etched and developed by photolithography technology to expose the nano-antenna 20, and the retained photoresist m1 covers at least a portion of the connecting edge (as shown in the dotted circle in FIG. (c));

[0078] in, Fig.13 (c) is shown based on the fourth embodiment described above as an example.

[0079] Furthermore, when the photoresist m1 deposited in step 2 is a negative photoresist, an electron beam or a light beam may be used to irradiate the area of ​​the substrate 10 except the area where the nano-antenna 20 is located, and the area where the nano-antenna 20 is located is covered with a mask, so that the positive photoresist in the unirradiated area will be washed away during the development process, while the positive photoresist in the irradiated area will not be washed away and will remain, thereby exposing the nano-antenna 20. When the photoresist m1 deposited in step 2 is a positive photoresist, an electron beam or a light beam may be used to irradiate the area where the nano-antenna 20 is located, and the area of ​​the substrate 10 except the area where the nano-antenna 20 is located is covered with a mask, so that the positive photoresist in the irradiated area will be washed away during the development process, while the positive photoresist in the unirradiated area will not be washed away and will remain, thereby exposing the nano-antenna 20.

[0080] Step 4: Fig.13 As shown in (d), wet etching is used to adjust the thickness of the remaining photoresist m1 to form a carrier blocking layer 50;

[0081] Exemplarily, an etchant such as KOH or HF may be used to adjust the thickness of the remaining photoresist m1.

[0082] Step 5: Cleaning the substrate 10 formed with the carrier blocking layer 50 to clean off the etching solution remaining on the surface of the light-emitting device during wet etching to maintain the cleanliness of the surface of the light-emitting device;

[0083] For example, during cleaning, a solvent such as KI or I 2 may be used to clean the substrate 10 on which the carrier blocking layer 50 is formed.

[0084] Step 6: Fig.13 As shown in (d), the light-emitting layer 30 is first formed on the carrier blocking layer 50 and the nano-antenna 20 by using but not limited to a solution method or an evaporation method, and then the electrode 40 is formed on the light-emitting layer 30 by using but not limited to a physical vapor deposition method.

[0085] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present application without departing from the spirit and scope of the embodiments of the present application. Thus, if these modifications and variations of the embodiments of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A light emitting device, characterized in that: include: A substrate, a nanoantenna and a carrier blocking layer arranged on the substrate, a light-emitting layer arranged on the nanoantenna and the carrier blocking layer, and an electrode arranged on the light-emitting layer, wherein a surface of the nanoantenna facing away from the substrate is a first surface, an edge connecting the first surface and the side of the nanoantenna is a connecting edge, and the carrier blocking layer blocks at least a portion of the connecting edge.

2. The light emitting device according to claim 1, characterized in that: A region of the first surface connected to the connecting edge is shielded by the carrier blocking layer.

3. The light emitting device according to claim 2, characterized in that: The width of the region of the first surface blocked by the carrier blocking layer is 0 to 100 nm.

4. The light emitting device according to any one of claims 1 to 3, characterized in that: The carrier blocking layer covers at least a portion of the side surface.

5. The light emitting device according to any one of claims 1 to 4, characterized in that: A distance between a surface of the carrier blocking layer facing away from the substrate and the substrate is greater than a distance between the first surface and the substrate.

6. The light emitting device according to any one of claims 1 to 5, characterized in that: The nano-antenna is reused as an anode, and the electrode is reused as a cathode.

7. The light emitting device according to any one of claims 1 to 6, characterized in that: The carrier blocking layer is made of insulating material or semiconductor material.

8. The light emitting device according to claim 7, characterized in that: The insulating material includes photoresist.

9. The light emitting device according to any one of claims 1 to 8, characterized in that: The surface of the light-emitting layer facing the electrode is a flat surface.

10. A pixel array, characterized in that: It comprises a plurality of pixels, each of the pixels comprises: a light emitting device as claimed in any one of claims 1 to 9.

11. The pixel array according to claim 10, wherein: The light emitting layers in different pixels are made of the same material.

12. The pixel array according to claim 10 or 11, characterized in that: The light-emitting layer is arranged on the entire surface.

13. The pixel array according to any one of claims 10 to 12, characterized in that: The pixel array further includes a first signal line, the first signal line is connected to the nano-antenna, and the first signal line and the connected nano-antenna are made of the same material.

14. An electronic device, characterized in that: It comprises: a shell and a pixel array as described in any one of claims 10 to 13, wherein the pixel array is arranged in the shell.

15. A method for manufacturing a light emitting device, characterized in that: include: forming a nano-antenna on a substrate; forming a carrier blocking layer on the substrate on which the nano-antenna is formed, wherein a surface of the nano-antenna facing away from the substrate is a first surface, and the carrier blocking layer shields at least a portion of a connection edge connecting the first surface and a side surface of the nano-antenna; forming a light-emitting layer on the carrier blocking layer and the nano-antenna; An electrode is formed on the light emitting layer.

16. The method of claim 15, wherein: Forming a carrier blocking layer on the substrate on which the nano-antenna is formed, comprising: Using insulating material or semiconductor material, depositing a first film layer on the substrate formed with the nano-antenna, wherein the first film layer covers the substrate and the nano-antenna; The first film layer is processed to expose the nano-antenna, and the first film layer covers at least a portion of the connecting edge to form the carrier blocking layer.

17. The method of claim 16, wherein: The first film layer is processed, comprising: When the first film layer is a photoresist layer, the photoresist layer is etched and developed by using photolithography technology.

18. The method of claim 17, wherein: Also includes: After etching and developing the photoresist layer and before forming the carrier blocking layer, a wet etching technique is used to adjust the thickness of the photoresist layer.

19. The method according to any one of claims 15 to 18, characterized in that: Also includes: After forming the carrier blocking layer and before forming the light emitting layer, the surface of the substrate on which the carrier blocking layer and the nano-antenna are formed is cleaned.

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