Terminal structure of semiconductor power device and manufacturing method thereof

By using a combination of a drift layer and an epitaxial layer in the terminal structure of the semiconductor power device, the surface electric field is adjusted by gradual change in the doping concentration of the doped region, the problem of easy breakdown of the semiconductor power device under high voltage is solved, and the device withstand voltage and blocking characteristics are significantly improved.

CN119342875BActive Publication Date: 2025-04-29BEIJING HONGWEI HUAISHI SEMICONDUCTOR CO LTD
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Patent Information

Application Number
CN202411890627.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-12-20
Publication Date
2025-04-29
Estimated Expiration
2044-12-20

AI Technical Summary

Technical Problem

Existing semiconductor power devices are prone to breakdown under high voltage, resulting in insufficient voltage resistance characteristics.

Method used

The terminal structure including a drift layer and an epitaxial layer is adopted. The conductivity type of the drift layer is a first conductivity type, the conductivity type of the epitaxial layer is a second conductivity type, the epitaxial layer includes a plurality of doping regions, the doping concentration decreases or increases in the first predetermined direction, and the first predetermined direction is perpendicular to the thickness direction of the epitaxial layer.

Benefits of technology

By adjusting the lateral and longitudinal expansion of the surface electric field, the concentration and thickness of the junction terminal protection area are accurately controlled, the occurrence of surface defects is reduced, the withstand voltage level of the semiconductor terminal is improved, the impact of surface charge on the withstand voltage of the device is reduced, the electric field concentration effect is alleviated, and the blocking characteristics of the device are improved.

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Abstract

The present invention provides a terminal structure of a semiconductor power device and a manufacturing method thereof. The terminal structure of the semiconductor power device includes a drift layer and an epitaxial layer, the conductivity type of the drift layer is a first conductivity type; the epitaxial layer is located on one side of the drift layer, the conductivity type of the epitaxial layer is a second conductivity type, the first conductivity type is different from the second conductivity type, and the epitaxial layer includes a plurality of doping regions, the doping concentration in each doping region decreases or increases along a first predetermined direction, and the first predetermined direction is perpendicular to the thickness direction of the epitaxial layer. The technical problem of how to improve the withstand voltage of semiconductor power devices in the prior art is solved.
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Citation Information

Patent Citations

  • Transverse variable doping junction terminal structure

    CN110518060A