Method for improving cleaning capability of silicon wafer box

Abstract

The invention relates to a method for improving the cleaning capacity of a silicon wafer box, and belongs to the technical field of silicon wafer box cleaning processes, and the method comprises the following operation steps: 1, cleaning in an ultrasonic tank in cooperation with a TSC-1 solution; secondly, after HF is diluted, the silicon wafer box is cleaned in an HF tank; and 3, cleaning and soaking the silicon wafer box in the pure water soaking tank. And 4, carrying out basket type soaking cleaning on the silicon wafer box in N + 1 pure water overflow tanks. And 5, cleaning the silicon wafer box, spraying, and removing a large amount of water on the surface through centrifugation. And step 6, drying in a drying box through heating, and blowing the silicon wafer box by nitrogen at the same time. The device has the advantages of convenient operation, good operation stability and good effect. The problem that the silicon wafer box is difficult to clean and easy to pollute the silicon wafer is solved. And the loading pressure of the wafer box cleaning machine is reduced while the wafer box cleaning capability is improved.

Description

Technical Field

[0001] The invention relates to the technical field of silicon wafer box cleaning technology, and in particular to a method for improving the cleaning ability of a silicon wafer box. Background Art

[0002] There are many risk points for introducing contamination during silicon wafer processing, and fixture contamination is one of them. The silicon wafer carrier box requires professional fixtures and cleaning equipment. In order to efficiently remove various impurities and stains on the surface of the silicon wafer box, it is particularly important to reduce reverse contamination of the silicon wafer.

[0003] Conventional cleaning equipment generally operates by spray cleaning, that is, the cleaning liquid is evenly sprayed on the surface of the silicon wafer box, and mechanical vibration or centrifugal drying is performed at the same time to remove stains and impurities from the surface of the silicon wafer box. The cleaning liquid will be collected into a centralized cleaning tank through a pipe, and then recycled through filtering, impurity removal, regeneration and other processing steps. Summary of the invention

[0004] The present invention mainly solves the problem in the prior art that a large amount of ultrapure water is involved in the cleaning process of a silicon wafer box, which is insufficient in removing particles and metals, and provides a method for improving the cleaning ability of a silicon wafer box, which has the advantages of convenient operation, good running stability and good effect. It solves the problem that the cleaning of a silicon wafer box is difficult and easy to contaminate silicon wafers. While increasing the cleaning ability of the wafer box, the load pressure of the wafer box cleaning machine is reduced.

[0005] The above technical problems of the present invention are mainly solved by the following technical solutions: A method for improving the cleaning ability of a silicon wafer box comprises the following steps: Step 1: Clean with TSC-1 solution in an ultrasonic tank.

[0006] Step 2: After diluting HF, the silicon wafer box is cleaned in the HF tank.

[0007] Step 3: Clean and soak the silicon wafer box in a pure water soaking tank.

[0008] After effective treatment in the chemical tank, the overflow effect of ultrapure water is used to further remove the surface chemical residue from the pre-treatment.

[0009] Step 4: The wafer box is cleaned by immersion in N+1 pure water overflow tanks.

[0010] Step 5: After cleaning, the silicon wafer box is sprayed and centrifuged to remove a large amount of surface water.

[0011] Step 6: Dry by heating in a drying oven and purge the silicon wafer box with nitrogen at the same time.

[0012] Preferably, the TSC-1 solution is composed of NH4OH+H2O2. During cleaning, the circulation flow rate of the TSC-1 solution is 8-13 L / min, the cleaning tank temperature is 42-48°C, the cleaning time is 500s-530s, and ultrasonic assistance is turned on.

[0013] As a surfactant, TSC-1 solution can effectively remove organic contamination attached to the incoming materials of non-cleanable silicon wafer boxes, and can be used with ultrasound to effectively remove the groove particles in the silicon wafer box, reducing the risk of reverse contamination of silicon wafers by the silicon wafer box.

[0014] Preferably, the HF solution in the HF tank is diluted by adding ultrapure water.

[0015] Adding low-concentration HF after dilution makes the silicon wafer box hydrophobic as a whole, preventing the particles from being further adsorbed, while increasing the ability to remove metal ions, and more effectively avoiding the risk of contamination caused by abnormal anion and cation atmosphere in the silicon wafer box.

[0016] Preferably, the chemical solution is added to the HF dilution solution, and the volume ratio of the mixed cleaning solution is HF:HNO3:H2O=1:3:10.

[0017] Preferably, after drying in the drying box, magnetic blocks are arranged on both sides of the drying box to form a magnetic field in the drying box, so that the moisture of the silicon wafer is evaporated during the drying process, and the attached metal pollution and particles are separated from the surface of the silicon wafer.

[0018] Preferably, during the drying tank process, the magnetic block is energized to generate an electromagnetic field, and nitrogen with pressure and flow rate is blown into the side and top to remove metal contamination and particles from the silicon wafer.

[0019] Preferably, nitrogen is introduced for gas explosion during the immersion cleaning process in the pure water immersion tank, so that metal contamination and particles are separated from the surface of the silicon wafer by the nitrogen explosion; and pulsed ultrasonic cleaning is simultaneously performed during the immersion cleaning process.

[0020] Preferably, the pretreated silicon wafer box is further dried under spraying ultrapure water in combination with mechanical centrifugation, and N2 is continuously purged to ensure the internal ion level of the silicon wafer box and avoid reverse contamination of the silicon wafer box by electrostatic effect.

[0021] The present invention can achieve the following effects: The present invention provides a method for improving the cleaning capacity of a wafer box, which has the advantages of convenient operation, good running stability and good effect compared with the prior art. The method solves the problem that the wafer box is difficult to clean and is easy to contaminate the wafer. While increasing the cleaning capacity of the wafer box, the load pressure of the wafer box cleaning machine is reduced.

[0022] The cleaning method of using simple ultrapure water combined with mechanical drying treatment and adding a pretreatment tank effectively reduces the risk of silicon wafer contamination caused by wafer box contamination. Whether it is the lag problem caused by abnormal atmosphere or the reverse contamination after direct contact, it can be more effectively avoided.

[0023] By adding a pre-treatment cleaning process for the wafer box, the dirt and impurities on the surface of the wafer box can be effectively removed while ensuring efficient cleaning. At the same time, the operation is simple and efficient. With programmable control, it is easy to use and has a high degree of automation, eliminating the tedious manual operation and reducing labor costs. It meets the environmentally friendly production concept, efficiently removes particles and metals on the surface of the wafer box, optimizes production capacity, and reduces the load pressure of the wafer box cleaning machine, so as to reasonably optimize production capacity while improving manufacturing capacity. DETAILED DESCRIPTION

[0024] The technical solution of the invention is further specifically described below through embodiments.

[0025] Embodiment: A method for improving the cleaning ability of a silicon wafer box comprises the following steps: Step 1: Clean with TSC-1 solution in an ultrasonic tank. TSC-1 solution is composed of NH4OH + H2O2. During cleaning, the circulation flow of TSC-1 solution is 8-13L / min, the cleaning tank temperature is 42-48℃, the cleaning time is 500s-530s, and ultrasonic assistance is turned on at the same time.

[0026] Step 2: After HF is diluted, the silicon wafer box is cleaned in the HF tank. The HF solution in the HF tank is diluted by adding ultrapure water.

[0027] Add the solution to the HF dilution solution, and the volume ratio of the mixed cleaning solution is HF:HNO3:H2O=1:3:10.

[0028] Step 3: The silicon wafer box is cleaned and soaked in a pure water soaking tank. During the soaking and cleaning process in the pure water soaking tank, nitrogen is introduced for gas explosion, which removes metal pollution and particles from the silicon wafer surface; pulsed ultrasonic cleaning is also performed during the soaking and cleaning process.

[0029] After effective treatment in the chemical tank, the overflow effect of ultrapure water is used to further remove the surface chemical residue from the pre-treatment.

[0030] Step 4: The wafer box is cleaned by immersion in N+1 pure water overflow tanks.

[0031] Step 5: After cleaning, the silicon wafer box is sprayed and centrifuged to remove a large amount of surface water.

[0032] The pre-treated silicon wafer box is further dried under the spray of ultrapure water in cooperation with mechanical centrifugal action, and N2 purging is continuously carried out to ensure the internal ion level of the silicon wafer box and avoid reverse contamination of the silicon wafer box by electrostatic effect.

[0033] Step 6: Dry by heating in a drying oven and purge the silicon wafer box with nitrogen at the same time.

[0034] After drying in the drying box, magnetic blocks are set on both sides of the drying box to form a magnetic field in the drying box. During the drying process, the moisture of the silicon wafer is evaporated and the attached metal pollution and particles are separated from the surface of the silicon wafer. During the drying process, the magnetic blocks are energized to generate an electromagnetic field, and nitrogen with pressure and flow rate is blown in from the side and top to remove the metal pollution and particles on the silicon wafer.

[0035] In summary, the method for improving the cleaning capacity of the wafer box has the advantages of convenient operation, good running stability and good effect. It solves the problem that the wafer box is difficult to clean and easy to contaminate the silicon wafer. While increasing the cleaning capacity of the wafer box, it reduces the load pressure of the wafer box cleaning machine.

[0036] The above description is only a specific embodiment of the present invention, but the structural features of the present invention are not limited thereto. Any changes or modifications made by any technician in the field of the present invention are included in the patent scope of the present invention.

Claims

1. A method for improving the cleaning ability of a silicon wafer box, characterized in that The steps are as follows: Step 1: Clean with TSC-1 solution in an ultrasonic tank; Step 2: After diluting HF, the silicon wafer box is cleaned in the HF tank; Step 3: Clean and soak the silicon wafer box in a pure water soaking tank; Step 4: The wafer box is cleaned by immersion in N+1 pure water overflow tanks; Step 5: After the silicon wafer box is cleaned, it is sprayed and centrifuged to remove a large amount of water on the surface; Step 6: Dry by heating in a drying oven and purge the silicon wafer box with nitrogen at the same time.

2. The method for improving the cleaning ability of a silicon wafer box according to claim 1, characterized in that: The TSC-1 solution is composed of NH4OH+H2O2. During cleaning, the circulation flow rate of the TSC-1 solution is 8-13 L / min, the cleaning tank temperature is 42-48°C, the cleaning time is 500s-530s, and ultrasonic assistance is turned on at the same time.

3. The method for improving the cleaning ability of a silicon wafer box according to claim 1, characterized in that: The HF solution in the HF tank is diluted by adding ultrapure water.

4. The method for improving the cleaning ability of a silicon wafer box according to claim 3, characterized in that: Add the solution to the HF dilution solution, and the volume ratio of the mixed cleaning solution is HF:HNO3:H2O=1:3:

10.

5. The method for improving the cleaning ability of a silicon wafer box according to claim 1, characterized in that: After drying in the drying box, magnetic blocks are set on both sides of the drying box to form a magnetic field in the drying box. During the drying process, the moisture on the silicon wafer is evaporated and the attached metal pollution and particles are detached from the surface of the silicon wafer.

6. The method for improving the cleaning ability of a silicon wafer box according to claim 5, characterized in that: During the drying process, the magnetic block is energized to generate an electromagnetic field, and nitrogen with pressure and flow rate is blown in from the side and top to remove metal contamination and particles from the silicon wafer.

7. The method for improving the cleaning ability of a silicon wafer box according to claim 1, characterized in that: During the immersion cleaning process in the pure water immersion tank, nitrogen is introduced for gas explosion, which removes metal pollution and particles from the surface of the silicon wafer; pulsed ultrasonic cleaning is performed simultaneously during the immersion cleaning process.

8. The method for improving the cleaning ability of a silicon wafer box according to claim 1, characterized in that: The pre-treated silicon wafer box is further dried under the spray of ultrapure water in cooperation with mechanical centrifugal action, and N2 purging is continuously carried out to ensure the internal ion level of the silicon wafer box and avoid reverse contamination of the silicon wafer box by electrostatic effect.